JPH09148874A - Surface acoustic wave element - Google Patents

Surface acoustic wave element

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Publication number
JPH09148874A
JPH09148874A JP30095995A JP30095995A JPH09148874A JP H09148874 A JPH09148874 A JP H09148874A JP 30095995 A JP30095995 A JP 30095995A JP 30095995 A JP30095995 A JP 30095995A JP H09148874 A JPH09148874 A JP H09148874A
Authority
JP
Japan
Prior art keywords
electrode
acoustic wave
surface acoustic
wave device
type electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30095995A
Other languages
Japanese (ja)
Inventor
Hitoshi Yanagihara
仁 柳原
Katsumi Ito
克美 伊藤
Takashi Shiba
芝  隆司
Akitsuna Yuhara
章綱 湯原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP30095995A priority Critical patent/JPH09148874A/en
Publication of JPH09148874A publication Critical patent/JPH09148874A/en
Pending legal-status Critical Current

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PROBLEM TO BE SOLVED: To reduce the ripple within a band which is generated due to the shape and dimension of an IDT(interdigital transducer) except three kinds of main unwanted waves of an end face reflection, a bulk wave and TTE(tripple transit echo) in a surface acoustic wave device in which the squareness ratio of the pass band width of a frequency characteristic is large and the electrode logarithms of the IDT with weight are numerous. SOLUTION: Because the unwanted waves in a surface acoustic wave device are generated due to the rates of the occupying of the electric charge concentrating in an electrode utmost end part and a very small electrode finger transposition width within the IDT, an electrode 7 for mitigation of electric charge is provided at the IDT electrode utmost end part. The side lobe composed of the very small electrode finger transposition width near output electrodes 2 and 3 side is reduced and sound absorbing material is formed in the drawing line part between the envelope of the side lobe which is far from the output electrodes 2 and 3 and a bus bar 11.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は特に重み付き型電極
の対数が多く、かつ、使用周波数の1波長(λ)以下の電
極指交差幅を多く含む構成となる弾性表面波装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention particularly relates to a surface acoustic wave device having a large number of weighted electrode pairs and a large electrode finger crossing width of one wavelength (λ) or less of the operating frequency.

【0002】[0002]

【従来の技術】弾性表面波装置は一般にTV用バンドパス
フィルタ等に使用される。該弾性表面波装置の構成は圧
電基板上にくし歯状の電極指(IDT:Inter Digital Tran
sduser)から構成される入力電極と出力電極とを所定の
距離隔てて配置し、該両電極間を伝播する表面波を利用
して所望の周波数特性を得るものである。
2. Description of the Related Art Surface acoustic wave devices are generally used for TV band pass filters and the like. The structure of the surface acoustic wave device is such that a comb-shaped electrode finger (IDT: Inter Digital Transistor) is formed on a piezoelectric substrate.
An input electrode composed of a sd user) and an output electrode are arranged at a predetermined distance, and a desired frequency characteristic is obtained by using a surface wave propagating between the two electrodes.

【0003】図10に一般的な弾性表面波装置の概略を示
す。入出力電極の一方はくし歯状電極指の交差幅が一定
な正規型電極2、他方は電極内で電極指の交差幅が異な
る重み付き型電極3である。表面波(SAW:Surface Acous
tic Wave)を利用するSAWフィルタでは前記正規型電極
2、重み付き型電極3の電極指対数、あるいは電極指の交
差幅12、13などを変えて所望の周波数特性を得ている。
該SAWフィルタでは圧電基板1上の入出力電極の形状寸法
と基本設計上で1対1に対応する表面波の他にフィルタ特
性としては不要な波が発生し、所望とするフィルタ特性
を得るための障害となる。該不要波の代表としては、
(1)端面反射:表面波は前記IDTの両側に発生するため圧
電基板の端面に到達し該端面から反射して出力電極に到
達する不要波。(2)バルク波:IDTから圧電基板の厚さ方
向に伝わり基板底面から反射して出力電極に到達する不
要波。(3)TTE(Triple Transit Echo):入力電極から出
力電極に達した表面波が出力電極で反射して入力電極に
戻り、再び出力電極に到達するもの等、3種類の不要波
がある。該3種類の不要波については以下の方法で抑圧
することが知られている。すなわち、(a)端面反射は圧
電基板の端面に吸音材を塗布することで抑圧できる。
(b)バルク波は基板底面を粗す等の方法により抑圧でき
る。(c)TTEはいわゆる(λ/8)幅の電極指から成るスプリ
ット電極、および入出力電極のインピーダンスと入出力
回路のインピーダンスの関係を調整することにより抑圧
できる。
FIG. 10 schematically shows a general surface acoustic wave device. One of the input / output electrodes is a normal type electrode 2 having a constant crossing width of the comb-shaped electrode fingers, and the other is a weighted type electrode 3 having different crossing widths of the electrode fingers within the electrode. Surface wave (SAW: Surface Acous
SAW filter using tic wave)
2. Desired frequency characteristics are obtained by changing the number of electrode finger pairs of the weighted type electrode 3, or the crossing widths 12 and 13 of the electrode fingers.
In the SAW filter, unnecessary waves are generated as the filter characteristics in addition to the surface dimensions corresponding to the shape and dimensions of the input / output electrodes on the piezoelectric substrate 1 and the basic design to obtain the desired filter characteristics. Becomes an obstacle. As a representative of the unnecessary wave,
(1) Edge reflection: Surface waves are generated on both sides of the IDT, and are unwanted waves that reach the edge of the piezoelectric substrate, are reflected from the edge, and reach the output electrode. (2) Bulk wave: An unwanted wave that propagates from the IDT in the thickness direction of the piezoelectric substrate, reflects from the bottom surface of the substrate, and reaches the output electrode. (3) TTE (Triple Transit Echo): There are three types of unwanted waves, such as surface waves that reach the output electrode from the input electrode, are reflected by the output electrode, return to the input electrode, and reach the output electrode again. It is known that the three types of unwanted waves are suppressed by the following method. That is, (a) end surface reflection can be suppressed by applying a sound absorbing material to the end surface of the piezoelectric substrate.
(b) Bulk waves can be suppressed by methods such as roughening the bottom surface of the substrate. (c) TTE can be suppressed by adjusting the relationship between the impedance of the split electrode composed of electrode fingers of so-called (λ / 8) width and the input / output electrode and the impedance of the input / output circuit.

【0004】しかし、要求される周波数特性が厳しくな
ると、上記手法では十分に対応できなくなってくる。以
下、この点について述べる。周波数特性の通過帯域幅の
角形比が大きくなるに従い重み付き型IDTの電極対数は
増加し、重み付き型IDTの交差幅が小さい領域がIDT全体
に占める割合が多くなる。その結果、SAWフィルタの中
心周波数の波長(λ)と略等しい電極指交差幅の占める割
合が多くなる。該電極対数の多い弾性表面波装置に共通
して前記不要波とは異なる不要波が存在し、SAWフィル
タの周波数帯域内にリップルとなって表われ所望の周波
数特性を得るのに不都合が生じる。前記した3種の主要
な不要波である端面反射、バルク波、TTE等とは異なる
表面波スプリアスを抑制する方法として特公平3-12485
号等に開示されている。しかし、IDTの電極指交差幅を
考慮した観点では配慮されていなかった。
However, when the required frequency characteristics become strict, the above method cannot sufficiently cope with it. Hereinafter, this point will be described. The number of electrode pairs of the weighted IDT increases as the squareness of the passband width of the frequency characteristic increases, and the ratio of the region where the crossing width of the weighted IDT is small to the entire IDT increases. As a result, the ratio of the electrode finger cross width substantially equal to the wavelength (λ) of the center frequency of the SAW filter increases. Undesired waves different from the aforementioned undesired waves exist in common in the surface acoustic wave device having a large number of electrode pairs, and they appear as ripples in the frequency band of the SAW filter, which causes inconvenience in obtaining desired frequency characteristics. As a method for suppressing surface wave spurious, which is different from the above-mentioned three types of main unnecessary waves, such as edge reflection, bulk wave, and TTE, Japanese Patent Publication No. 3-12485
And the like. However, it was not considered from the viewpoint of the width of the IDT crossing the electrode fingers.

【0005】[0005]

【発明が解決しようとする課題】前記3種の主要不要波
とは異なる不要波を把握するため実験も含め種々検討を
行なった。その結果、以下に示す2つの発生要因がある
ことがわかった。
DISCLOSURE OF THE INVENTION Various studies including experiments have been conducted in order to understand unnecessary waves different from the above-mentioned three types of main unnecessary waves. As a result, it was found that there are the following two causes.

【0006】(i) IDTの電極指両端に電荷が集中し設
計時に比べ大きな励振が生じている。
(I) The electric charge is concentrated on both ends of the electrode finger of the IDT, and a large excitation is generated as compared with the design time.

【0007】(ii) 重み付き型電極のIDT対数が多く、S
AWフィルタの使用帯域周波数の1波長(λ)以下の微小電
極指交差幅の数がIDT内に占める割合が多くなると前記
不要波が目立ってくる。また、重み付き型電極のサイド
ローブ同士の大小関係も前記不要波が目立ってくること
に影響している。
(Ii) The weighted type electrode has a large number of IDT pairs, and S
The unnecessary wave becomes conspicuous when the number of microelectrode finger crossing widths less than or equal to one wavelength (λ) of the used band frequency of the AW filter is large in the IDT. In addition, the magnitude relationship between the side lobes of the weighted type electrode also influences the fact that the unwanted wave becomes noticeable.

【0008】したがって、本発明の課題は前記3種の主
要不要波以外に存在するIDT形状に依存する不要波を低
減することにある。
[0008] Therefore, an object of the present invention is to reduce unnecessary waves depending on the IDT shape, which exist in addition to the above-mentioned three types of main unnecessary waves.

【0009】[0009]

【課題を解決するための手段】即ち、該課題を解決する
ため、以下の手段を用いる。
Means for Solving the Problem That is, in order to solve the problem, the following means are used.

【0010】前記(i)については重み付き型電極の両端
に電束集中による端部効果から、余計に生じる電荷を電
極指以外の部分に配分して緩和させる。
With respect to the above (i), due to the end effect due to the electric flux concentration at both ends of the weighted type electrode, unnecessary charges are distributed to the portions other than the electrode fingers to be relaxed.

【0011】前記(ii)については微小電極指交差幅が不
要波発生に関与する要因として以下のように考察する。
すなわち、SAWフィルタに用いる圧電基板は音速異方性
を持っているため入出力IDT方向に表面波が最も効率良
く伝わるように構成されるが、いわゆる回折現象があり
電極指交差幅が1λ付近の微小電極指交差幅部では入出
力IDT間の表面波伝播中心軸方向と異なる方向へも伝わ
る表面波成分が交差幅の大きい電極指に比べ相対的に大
きくなり不要波として悪影響を与え、該1λ付近の微小
電極指交差幅で構成されるサイドローブ数が多くなれば
なるほど前記影響は増大し周波数特性にリップルとなっ
て現われるのである。したがって、前記3種の主要不要
波以外に存在するIDT形状に依存する不要波を低減する
には、前記微小電極指交差幅の数を縮小する必要があ
る。
Regarding the above (ii), the following will be considered as a factor in which the width of the microelectrode finger crossing contributes to the generation of the unwanted wave.
That is, since the piezoelectric substrate used for the SAW filter has sonic anisotropy, it is configured so that surface waves can be transmitted most efficiently in the input / output IDT direction. In the micro-electrode finger cross width part, the surface wave component that propagates in the direction different from the central axis direction of the surface wave propagation between the input and output IDTs becomes relatively larger than that of the electrode finger with a large cross width, which adversely affects the unwanted wave. As the number of side lobes formed by the crossing width of the microelectrode fingers in the vicinity increases, the influence increases and appears as ripples in the frequency characteristic. Therefore, in order to reduce unnecessary waves depending on the IDT shape that are present in addition to the above-mentioned three types of main unnecessary waves, it is necessary to reduce the number of the microelectrode finger crossing widths.

【0012】本発明の第一の手段は、IDT最端電極指の
外側に電荷緩和用ダミー電極を設ける。第二の手段は、
重み付き型電極内のメインローブに対し正規型電極側と
反対側にあるサイドローブの電極指交差幅の包絡線とバ
スバーとの間に形成される電極指引出線部に表面波吸音
材を形成する。正規型電極側には1λ以下のサイドロー
ブは形成しない。
A first means of the present invention is to provide a charge relaxation dummy electrode outside the IDT endmost electrode finger. The second means is
A surface acoustic wave absorbing material is formed on the electrode finger lead line formed between the bus bar and the envelope of the electrode finger crossing width of the side lobe on the side opposite to the normal type electrode side with respect to the main lobe in the weighted type electrode. To do. Side lobes less than 1λ are not formed on the regular electrode side.

【0013】前記微小電極指交差幅の数を縮小させる別
の手段としては、重み付き型電極の開口長をサイドロー
ブの電極指交差幅全てが1λ以上となるように開口長を
決定する方法もある。
As another means for reducing the number of the crossing widths of the micro electrode fingers, there is also a method of determining the opening length of the weighted type electrode so that all the crossing widths of the electrode fingers of the side lobes are 1λ or more. is there.

【0014】[0014]

【発明の実施の形態】BEST MODE FOR CARRYING OUT THE INVENTION

実施例1 前記第一の手段における具体例としてTVIFフィルタ用の
バンドパスフィルタに適用した例について説明する。
Example 1 An example applied to a bandpass filter for a TVIF filter will be described as a specific example of the first means.

【0015】図1は圧電基板1にLiNbO3(リチウムナイオ
ベート:LN)を用いて入力電極にIDT対数を6対とする正規
型電極2、出力電極に重み付き型電極3を用い対数は125
対として設計した弾性表面波装置の概略である。重み付
き型電極3内のサイドローブ6数は15個であり、メインロ
ーブ5の電極指交差幅は28波長相当として電極形成し
た。また、電極構成は電極内反射に強い電極指幅がλ/8
となるスプリット型電極を用いた。IDT内の電極指間隔
は等ピッチである。
In FIG. 1, a piezoelectric substrate 1 is made of LiNbO 3 (lithium niobate: LN), an input electrode is a normal type electrode 2 having 6 pairs of IDT, and an output electrode is a weighted type electrode 3, and a logarithm is 125.
It is an outline of a surface acoustic wave device designed as a pair. The number of side lobes 6 in the weighted type electrode 3 was 15, and the electrode finger crossing width of the main lobe 5 was formed so as to correspond to 28 wavelengths. In addition, the electrode configuration is such that the electrode finger width is λ / 8
A split type electrode is used. The electrode finger spacing in the IDT is even.

【0016】本実施例では重み付き型電極3の入力側IDT
最端部のバスバーからSAW伝播路方向と入力電極側に延
び、長さが3λ相当のIDTとは約30度の角度をなす電荷緩
和用電極7を設けた。さらに、該電荷緩和用電極7をSAW
伝播路上に形成したことによる音速位相を補正するため
音速補正用電極8を電荷緩和用電極7を形成しなかったSA
W伝播路領域に形成した。入出力間のシールド用として
形成するアース電極4は前記電荷緩和用電極7との距離を
同じとするためSAW伝播路中心軸で折り返す"くの字型"
とした。この"くの字型"とすることにより若干のサイズ
短縮効果もある。
In this embodiment, the input side IDT of the weighted electrode 3
A charge relaxation electrode 7 was provided that extends from the bus bar at the end to the SAW propagation path direction and the input electrode side, and forms an angle of about 30 degrees with the IDT having a length of 3λ. Further, the charge relaxation electrode 7 is SAW
In order to correct the sonic velocity phase due to the formation on the propagation path, the sonic velocity correction electrode 8 and the charge relaxation electrode 7 were not formed SA
Formed in the W propagation path region. The ground electrode 4 formed as a shield between the input and output has a "dogleg" shape that folds back along the SAW propagation path center axis in order to keep the same distance from the charge relaxation electrode 7.
And There is also a slight size reduction effect due to this "doglegged" shape.

【0017】その結果、重み付き型電極3最端部に集中
する電荷は本発明の電荷緩和用電極7により緩和されSAW
フィルタ帯域内に表われていたリップルは約0.5dB低減
し所望の周波数特性を得ることができた。
As a result, the electric charge concentrated at the outermost end of the weighted type electrode 3 is relaxed by the electric charge relaxation electrode 7 of the present invention, and SAW.
The ripple appearing in the filter band was reduced by about 0.5 dB and the desired frequency characteristics could be obtained.

【0018】実施例2 以下に、前記第二の手段の具体例として実施例1と同じ
SAWフィルタを用いて行なった例について図2を用いて説
明する。
Embodiment 2 The following is the same as Embodiment 1 as a specific example of the second means.
An example of using the SAW filter will be described with reference to FIG.

【0019】前記、SAWフィルタの重み付き型電極3内で
電極指交差幅が1λ相当以下となるサイドローブ数は10
個である。本実施例では入力電極2側の重み付き型電極3
内の微小電極指交差幅のサイドローブ10個分を削除し、
入力側電極指とは反対側のサイドローブ6領域のバスバ
ー11とサイドローブ包絡線6の間に吸音材を10を塗布形
成した。すなわち、重み付き型電極3はメインローブ5に
対し、左右非対称な構成となっている。
In the weighted type electrode 3 of the SAW filter, the number of side lobes at which the electrode finger cross width is equal to or less than 1λ is 10
Individual. In this embodiment, the weighted type electrode 3 on the input electrode 2 side
Delete 10 side lobes of the crossing width of the micro-electrode fingers inside,
A sound absorbing material 10 was applied and formed between the bus bar 11 and the side lobe envelope 6 in the side lobe 6 region on the side opposite to the input side electrode finger. That is, the weighted type electrode 3 has a laterally asymmetrical configuration with respect to the main lobe 5.

【0020】その結果、正規型電極2とは反対側の微小
電極指交差幅から発生する不要波は重み付き型電極3の
サイドローブ包絡線6外に形成した吸音材10により吸収
され、入力電極側の微小電極指交差幅から発生していた
不要波は微小電極指交差幅を削除したことにより不要波
発生は抑圧された。本発明の悪影響としては一方のサイ
ドローブを削除し重み付き型電極を非対称としたため、
帯域内にリップルが発生したが本発明で対象とする不要
波に対しては小さく特性的には本発明適用前よりも約0.
7dB改善されたSAWフィルタを得ることができた。また、
本実施例によれば重み付き型電極の電極指対数を125対
から90対に減少できたため素子の小型化も実現できコス
ト低減を同時に得ることができた。さらに、入出力間距
離が短縮したことにより群遅延時間も短縮し、リップル
の周期も短くなる効果が得られた。
As a result, the unwanted wave generated from the crossing width of the microelectrode fingers on the side opposite to the normal type electrode 2 is absorbed by the sound absorbing material 10 formed outside the side lobe envelope 6 of the weighted type electrode 3 and the input electrode The unnecessary wave generated from the crossing width of the microelectrode fingers on the side was suppressed by deleting the crossing width of the microelectrode fingers. As an adverse effect of the present invention, since one side lobe is deleted and the weighted type electrode is made asymmetric,
Ripple occurred in the band, but it was small for unwanted waves targeted by the present invention and characteristically about 0.
A 7W improved SAW filter could be obtained. Also,
According to the present embodiment, the number of electrode finger pairs of the weighted type electrode can be reduced from 125 pairs to 90 pairs, so that the element can be downsized and the cost can be reduced at the same time. Furthermore, the effect of shortening the group delay time by shortening the input-output distance and shortening the ripple cycle was also obtained.

【0021】なお、本実施例による方法はサイドローブ
の電極指交差幅が飽和傾向を示すサイドローブの領域に
関係して効果を発揮するので、該領域のサイドローブの
数が3個以上の時に特に効力を発揮した。
Since the method according to the present embodiment is effective in relation to the side lobe region where the electrode finger crossing width of the side lobe shows a saturation tendency, when the number of side lobes in the region is 3 or more. Especially effective.

【0022】実施例3 他実施例として前記実施例2において、正規型電極2側
の微小電極指交差幅のサイドローブをバスバーにスリッ
トを設け電気的に遮断した図3に示す構造とした場合に
おいても本発明の目的は達成された。
Embodiment 3 As another embodiment, in the case of Embodiment 2 in which the side lobes of the width of the microelectrode fingers on the side of the normal type electrode 2 are electrically cut off by providing slits in the bus bar in the structure of FIG. However, the object of the present invention has been achieved.

【0023】実施例4 他実施例として前記、実施例1、実施例2を組み合わせ
た図4に示す構造とした場合においても本発明の目的は
達成された。
Embodiment 4 The object of the present invention has been achieved even when the structure shown in FIG. 4 in which the above-described Embodiments 1 and 2 are combined is used as another embodiment.

【0024】他実施例として図5、6に示すように正規型
電極2と反対側の重み付き型電極3のバスバー11と電極指
交差幅の包絡線6との間のバスバー11と電極指交差部5、
6とを結ぶ引き出し線部を全面電極14とした場合。ま
た、図7、8に示すように重み付き型電極3の両端部に電
荷緩和用電極7を設けた場合、図9に示すように電荷緩和
用電極7をバスバー11の外側に向けた場合においても本
発明の目的は達成された。さらに、重み付き型電極の開
口長をサイドローブを含め全ての電極指交差幅が1λ以
上となるようにした場合においても、本発明で対象とし
た不要波は抑圧された。
As another embodiment, as shown in FIGS. 5 and 6, the bus bar 11 and the electrode finger crossing between the bus bar 11 of the weighted type electrode 3 on the opposite side of the normal type electrode 2 and the envelope 6 of the electrode finger crossing width Part 5,
When the lead wire connecting 6 and 6 is the entire surface electrode 14. Further, when the charge relaxation electrode 7 is provided at both ends of the weighted type electrode 3 as shown in FIGS. 7 and 8, and when the charge relaxation electrode 7 is directed to the outside of the bus bar 11 as shown in FIG. However, the object of the present invention has been achieved. Further, even when the aperture length of the weighted electrode is set so that all electrode finger crossing widths including side lobes are 1λ or more, the unwanted wave targeted by the present invention is suppressed.

【0025】[0025]

【発明の効果】本発明は周波数特性の角形比が大きく、
重み付き型電極のIDT電極対数が多いSAWフィルタに発生
する帯域内リップルを低減した弾性表面波装置を提供す
ること。また、本発明の第二の手段によればコスト低減
達成にも効果を発揮できる。
The present invention has a large squareness ratio of frequency characteristics,
To provide a surface acoustic wave device in which the in-band ripple generated in a SAW filter having a large number of IDT electrode pairs of weighted electrodes is reduced. Further, according to the second means of the present invention, it is possible to exert an effect in achieving cost reduction.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施例を説明するための弾性表面波装
置の概略図。
FIG. 1 is a schematic view of a surface acoustic wave device for explaining an embodiment of the invention.

【図2】本発明の実施例を説明するための弾性表面波装
置の概略図。
FIG. 2 is a schematic view of a surface acoustic wave device for explaining an embodiment of the invention.

【図3】本発明の実施例を説明するための弾性表面波装
置の概略図。
FIG. 3 is a schematic view of a surface acoustic wave device for explaining an embodiment of the invention.

【図4】本発明の実施例を説明するための弾性表面波装
置の概略図。
FIG. 4 is a schematic view of a surface acoustic wave device for explaining an embodiment of the invention.

【図5】本発明の実施例を説明するための弾性表面波装
置の概略図。
FIG. 5 is a schematic view of a surface acoustic wave device for explaining an embodiment of the invention.

【図6】本発明の実施例を説明するための弾性表面波装
置の概略図。
FIG. 6 is a schematic view of a surface acoustic wave device for explaining an embodiment of the invention.

【図7】本発明の実施例を説明するための弾性表面波装
置の概略図。
FIG. 7 is a schematic view of a surface acoustic wave device for explaining an embodiment of the invention.

【図8】本発明の実施例を説明するための弾性表面波装
置の概略図。
FIG. 8 is a schematic view of a surface acoustic wave device for explaining an embodiment of the invention.

【図9】本発明の実施例を説明するための弾性表面波装
置の概略図。
FIG. 9 is a schematic view of a surface acoustic wave device for explaining an embodiment of the invention.

【図10】従来例を説明するための弾性表面波装置の概
略図。
FIG. 10 is a schematic view of a surface acoustic wave device for explaining a conventional example.

【符号の説明】[Explanation of symbols]

1-----圧電基板 2-----正規型電
極 3-----重み付き型電極 4-----アース電
極 5-----メインローブ包絡線 6-----サイドロ
ーブ包絡線 7-----電荷緩和用電極 8-----音速補正
用電極 9-----λ/4電極 10-----吸音材 11-----バスバー 12、13-----電極指
交差幅
1 ----- Piezoelectric substrate 2 ----- Regular type electrode 3 ----- Weighted type electrode 4 ----- Ground electrode 5 ----- Main lobe envelope 6 ---- -Side lobe envelope 7 ----- Electrode for charge relaxation 8 ----- Electrode for sound velocity correction 9 ----- λ / 4 electrode 10 ----- Sound absorbing material 11 ----- Bus bar 12, 13 ----- Crossing width of electrode fingers

───────────────────────────────────────────────────── フロントページの続き (72)発明者 芝 隆司 神奈川県横浜市戸塚区吉田町292番地株式 会社日立製作所マルチメディアシステム開 発本部内 (72)発明者 湯原 章綱 神奈川県横浜市戸塚区吉田町292番地株式 会社日立製作所マルチメディアシステム開 発本部内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Takashi Shiba, Inventor Takashi Shiba, 292 Yoshida-cho, Totsuka-ku, Yokohama, Kanagawa, Ltd. Multimedia system development headquarters, Hitachi, Ltd. 292, Machi, Ltd. Hitachi, Ltd. Multimedia system development headquarters

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】圧電基板上にくし歯状電極から成る入出力
電極を設け、少なくとも一方の電極は重み付き型電極か
ら構成され、該重み付き型電極の電極指交差幅が使用中
心周波数の波長(λ)に対し1λ以下の電極指交差幅を有
する弾性表面波装置において、前記重み付き型電極の左
右の電極指最端部の少なくとも一方に電荷緩和用ダミー
電極を設けたことを特徴とする弾性表面波装置。
1. An input / output electrode composed of a comb-shaped electrode is provided on a piezoelectric substrate, and at least one of the electrodes is composed of a weighted type electrode, and the crossing width of the electrode fingers of the weighted type electrode is a wavelength of a use center frequency. In a surface acoustic wave device having an electrode finger crossing width of 1λ or less with respect to (λ), a charge relaxation dummy electrode is provided on at least one of the left and right electrode finger extreme ends of the weighted type electrode. Surface acoustic wave device.
【請求項2】請求項1記載の弾性表面波装置は、重み付
き型電極中の電極指交差幅から形作られる図形的なパタ
ンのメインローブの両端に形成される複数のサイドロー
ブの交差幅をサイドローブにメインローブに近い側から
番号Nを与えてS(N)とし、メインローブから離れるに従
いサイドローブ番号(N)を多くしたとき、該サイドロー
ブ比(S(N+1)/S(N))が略一定から増加に転じ、さらに略
一定となるサイドローブの数が3個以上あることを特徴
とする弾性表面波装置。
2. The surface acoustic wave device according to claim 1, wherein a cross width of a plurality of side lobes formed at both ends of a main lobe of a graphic pattern formed from the cross widths of electrode fingers in a weighted type electrode is defined. When the side lobe is given a number N from the side closer to the main lobe to be S (N), and the side lobe number (N) is increased as the distance from the main lobe increases, the side lobe ratio (S (N + 1) / S ( The surface acoustic wave device is characterized in that (N)) changes from substantially constant to increasing, and the number of side lobes that become substantially constant is 3 or more.
【請求項3】弾性表面波装置の入出力電極の少なくとも
一方が重み付き型電極であって、サイドローブの数がメ
インローブを中心に左右で異なる構成であり、該メイン
ローブが他方の電極側に近く形成されていることを特徴
とする弾性表面波装置。
3. A surface acoustic wave device, wherein at least one of the input and output electrodes is a weighted electrode, and the number of side lobes is different on the left and right with respect to the main lobe, and the main lobe is on the other electrode side. A surface acoustic wave device characterized in that it is formed close to.
【請求項4】弾性表面波装置の入出力電極の少なくとも
一方が重み付き型電極であって、電極指交差幅が1λ以
下のサイドローブを除く、残りのサイドローブはメイン
ローブを中心にして左右で同数であり、該電極指交差幅
が1λ以下のサイドローブは正規型電極に対して反対側
にのみ形成されていることを特徴とする弾性表面波装
置。
4. At least one of the input and output electrodes of the surface acoustic wave device is a weighted type electrode, except for the side lobes whose electrode finger cross width is 1λ or less, the remaining side lobes are centered on the main lobe. The surface acoustic wave device is characterized in that the side lobes having the same number and the electrode finger crossing width of 1λ or less are formed only on the opposite side to the normal type electrode.
【請求項5】弾性表面波装置の入出力電極の少なくとも
一方が重み付き型電極で、メインローブに対して左右の
サイドローブ数が同数に構成され、正規型電極に近い側
の電極指交差幅が1λ以下のサイドローブはバスバーに
スリットを設け電気的にメインローブと分離されている
ことを特徴とする弾性表面波装置。
5. An electrode finger crossing width on the side closer to the normal type electrode, wherein at least one of the input and output electrodes of the surface acoustic wave device is a weighted type electrode and the left and right side lobes are configured to have the same number as the main lobe. The surface acoustic wave device is characterized in that the side lobe of 1 λ or less is electrically separated from the main lobe by providing a slit in the bus bar.
JP30095995A 1995-11-20 1995-11-20 Surface acoustic wave element Pending JPH09148874A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30095995A JPH09148874A (en) 1995-11-20 1995-11-20 Surface acoustic wave element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30095995A JPH09148874A (en) 1995-11-20 1995-11-20 Surface acoustic wave element

Publications (1)

Publication Number Publication Date
JPH09148874A true JPH09148874A (en) 1997-06-06

Family

ID=17891145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30095995A Pending JPH09148874A (en) 1995-11-20 1995-11-20 Surface acoustic wave element

Country Status (1)

Country Link
JP (1) JPH09148874A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100451081B1 (en) * 2002-05-15 2004-10-02 엘지이노텍 주식회사 Noise blocking structure of surface acoustic wave filter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100451081B1 (en) * 2002-05-15 2004-10-02 엘지이노텍 주식회사 Noise blocking structure of surface acoustic wave filter

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