JPH091461A - Grinding stone and grinding wheel using grinding stone - Google Patents
Grinding stone and grinding wheel using grinding stoneInfo
- Publication number
- JPH091461A JPH091461A JP17299195A JP17299195A JPH091461A JP H091461 A JPH091461 A JP H091461A JP 17299195 A JP17299195 A JP 17299195A JP 17299195 A JP17299195 A JP 17299195A JP H091461 A JPH091461 A JP H091461A
- Authority
- JP
- Japan
- Prior art keywords
- abrasive grains
- solution
- polishing
- suspension
- grinding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004575 stone Substances 0.000 title abstract description 6
- 239000006061 abrasive grain Substances 0.000 claims abstract description 23
- 239000000243 solution Substances 0.000 claims abstract description 10
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 claims abstract description 7
- IXPNQXFRVYWDDI-UHFFFAOYSA-N 1-methyl-2,4-dioxo-1,3-diazinane-5-carboximidamide Chemical compound CN1CC(C(N)=N)C(=O)NC1=O IXPNQXFRVYWDDI-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000001110 calcium chloride Substances 0.000 claims abstract description 6
- 229910001628 calcium chloride Inorganic materials 0.000 claims abstract description 6
- 239000008151 electrolyte solution Substances 0.000 claims abstract description 6
- 239000000661 sodium alginate Substances 0.000 claims abstract description 6
- 235000010413 sodium alginate Nutrition 0.000 claims abstract description 6
- 229940005550 sodium alginate Drugs 0.000 claims abstract description 6
- 238000005498 polishing Methods 0.000 claims description 39
- 239000007788 liquid Substances 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 239000002904 solvent Substances 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 239000011230 binding agent Substances 0.000 abstract description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 abstract description 6
- 230000003746 surface roughness Effects 0.000 abstract description 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 abstract description 4
- 239000003792 electrolyte Substances 0.000 abstract description 4
- 230000036571 hydration Effects 0.000 abstract description 3
- 238000006703 hydration reaction Methods 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 abstract description 2
- 239000000920 calcium hydroxide Substances 0.000 abstract description 2
- 229910001861 calcium hydroxide Inorganic materials 0.000 abstract description 2
- 239000000084 colloidal system Substances 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract description 2
- 239000011780 sodium chloride Substances 0.000 abstract description 2
- 239000000725 suspension Substances 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 235000008429 bread Nutrition 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 229920000084 Gum arabic Polymers 0.000 description 1
- 241000978776 Senegalia senegal Species 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000205 acacia gum Substances 0.000 description 1
- 235000010489 acacia gum Nutrition 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 150000002605 large molecules Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000131 polyvinylidene Polymers 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、研磨砥石及びその研磨
砥石を用いた研磨ホイールに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a grinding wheel and a grinding wheel using the grinding wheel.
【０００２】[0002]
【従来の技術】半導体ウェーハ等の表面を微細研磨（鏡
面研磨及びウェーハ上に回路を形成する過程で酸化膜等
を平坦研磨する等）するに当たり、遊離砥粒を用いた研
磨砥石が用いられるのが一般的である。2. Description of the Related Art In finely polishing the surface of a semiconductor wafer (such as mirror polishing and flat polishing of an oxide film in the process of forming a circuit on a wafer), a polishing grindstone using loose abrasive grains is used. Is common.
【０００３】[0003]
【発明が解決しようとする課題】従来の研磨砥石を用い
た研磨装置によると、枚葉式でないため生産性が悪く、
又遊離砥粒が周囲を汚染するという問題がある。このよ
うな問題を解決するために、電気泳動法による研磨砥石
が開発されたが、砥粒が均一に分散していないため比較
的表面粗さが大きく、加工変質層が生じる等精密研磨が
出来ない問題がある。本発明は、このような従来の研磨
砥石の欠点を解消するためになされ、表面粗さが小さ
く、加工変質層の無い精密研磨が得られるようにした、
研磨砥石及びその研磨砥石を用いた研磨ホイールを提供
することを課題とする。According to the conventional polishing apparatus using a polishing grindstone, the productivity is poor because it is not a single-wafer type,
There is also a problem that loose abrasive grains contaminate the surroundings. In order to solve such a problem, a polishing grindstone by the electrophoretic method was developed, but since the abrasive grains are not evenly dispersed, the surface roughness is relatively large, and it is possible to perform precision polishing such as the occurrence of a work-affected layer. There is no problem. The present invention has been made in order to eliminate the drawbacks of the conventional grinding wheel, the surface roughness is small, it is possible to obtain precision polishing without a work-affected layer,
An object of the present invention is to provide a polishing wheel and a polishing wheel using the polishing wheel.
【０００４】[0004]
【課題を解決するための手段】前記課題を技術的に解決
するための手段として、本発明は、ＳｉＯ2 等の砥粒を
アルギン酸ナトリウム等の水和層を形成する溶液中に混
入して混濁液を形成し、その混濁液中に塩化カルシウム
等の電解溶液を流し込み凝固させて成る研磨砥石を要旨
とする。更に、その研磨砥石を適宜の形状に裁断加工
し、アルミ等から成る基台に配設固定した研磨ホイール
を要旨とする。Means for Solving the Problems As a means for technically solving the above-mentioned problems, the present invention comprises mixing abrasive grains such as SiO 2 into a solution for forming a hydrated layer such as sodium alginate to make the solution cloudy. A polishing grindstone formed by forming a liquid and pouring an electrolytic solution such as calcium chloride into the turbid liquid to solidify the liquid is a gist. Further, the gist is a polishing wheel in which the polishing whetstone is cut into an appropriate shape and arranged and fixed on a base made of aluminum or the like.
【０００５】[0005]
【作 用】砥粒の混濁液に電解質を加えることで、砥粒
が溶液中に均等に一定密度で分散した状態で凝固するた
め、精密研磨性に優れた研磨砥石が得られる。[Operation] By adding an electrolyte to the turbid liquid of abrasive grains, the abrasive grains are solidified in a state of being uniformly dispersed in the solution at a constant density, so that a polishing whetstone excellent in precision polishing property can be obtained.
【０００６】[0006]
【実施例】以下、本発明の一実施例を添付図面に基づい
て詳説する。図１(イ) 〜(ハ) は本発明に係る研磨砥石を
製造する方法を示すもので、先ず(イ)に示すように容器
１に溶媒２（水、メチルアルコール、エチルアルコー
ル、グリセリン、アセトン等）を入れ、その溶媒に粒子
径が１μｍ以下の砥粒３（ＳｉＯ2 、ＡｌＯ3 、ＴｉＯ
2 、ＳｉＣ、Ｃｒ2 Ｏ3 、ＣａＣＯ3 、ＺｒＯ2 、ダイ
ヤモンド、ＣｅＯ2 、ＦｅＯ3 等）を混濁・分散させ
る。この場合、溶媒１００重量％に対して砥粒は４０重
量％とする。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below in detail with reference to the accompanying drawings. FIGS. 1 (a) to 1 (c) show a method for producing a polishing grindstone according to the present invention. First, as shown in FIG. 1 (a), a solvent 2 (water, methyl alcohol, ethyl alcohol, glycerin, acetone) is placed in a container 1. Etc.), and the abrasive grains 3 (SiO 2 , AlO 3 , TiO 2 ) having a particle size of 1 μm or less in the solvent.
2 , SiC, Cr 2 O 3 , CaCO 3 , ZrO 2 , diamond, CeO 2 , FeO 3 etc.) are turbid and dispersed. In this case, the abrasive grains are 40% by weight with respect to 100% by weight of the solvent.
【０００７】この溶液に結合剤４（アルギン酸ナトリウ
ム、ポリビニリデンアルコール、カルボキシルメチルセ
ルロース、アラビアゴム、デンプン、ニカワ、タンパク
質等高分子化合物）を１．５重量％程度混入して良く攪
拌すると、混濁液５中にて分散した砥粒３の回りに結合
剤４が保護コロイドとして層を形成し、更にその外側に
水和層６を形成する（図３参照）。これにより、砥粒３
の分散はより一層安定することが分かる。Binder 4 (sodium alginate, polyvinylidene alcohol, carboxymethyl cellulose, gum arabic, starch, glue, high molecular weight compound such as protein) is mixed in this solution at a concentration of about 1.5 wt. The binder 4 forms a layer as a protective colloid around the abrasive grains 3 dispersed therein, and further forms a hydrated layer 6 on the outer side thereof (see FIG. 3). As a result, the abrasive grains 3
It can be seen that the dispersion of is more stable.
【０００８】次に、図１(ロ) のように混濁液５に電解質
（塩化カルシウム、水酸化カルシウム、水酸化ナトリウ
ム、塩化ナトリウム等）溶液つまり電解溶液７を２０重
量％程度静かに流し込むと、砥粒３の電荷が中和されて
砥粒３が均等に一定の密度で分散した状態で凝固し、図
１(ハ) に示すようなパン素地状の研磨砥石８が形成され
る。Next, as shown in FIG. 1 (b), an electrolyte (calcium chloride, calcium hydroxide, sodium hydroxide, sodium chloride, etc.) solution, that is, an electrolytic solution 7 is gently poured into the turbid liquid 5 by about 20% by weight. The electric charge of the abrasive grains 3 is neutralized and the abrasive grains 3 are solidified in a state of being uniformly dispersed at a constant density to form a pan-ground polishing grindstone 8 as shown in FIG.
【０００９】このようにして形成された研磨砥石８か
ら、図１(ニ) に示すように所定の大きさの砥石片９をカ
ッタ等で切断して形成し、これらの砥石片９を例えば図
１(ホ)に示すように円盤状のアルミ基台１０の一方の面
に一定の間隔をあけて円周方向に配設固定すれば、研磨
ホイール１１を形成することが出来る。From the polishing grindstone 8 thus formed, a grindstone piece 9 of a predetermined size is formed by cutting with a cutter or the like as shown in FIG. 1 (d). As shown in FIG. 1 (e), the grinding wheel 11 can be formed by disposing and fixing the disk-shaped aluminum base 10 on one surface in the circumferential direction at regular intervals.
【００１０】前記研磨ホイール１１は、例えば図２(イ)
に示すような研磨装置１２の取付部１２ａに装着して使
用される。即ち、Ｙ軸方向に移動可能なチャックテーブ
ル１３の上に半導体ウェーハＷが保持され、Ｚ軸方向に
移動可能なスピンドルユニット１４により研磨ホイール
１１が図２(ロ) に示すように前記ウェーハＷに適圧で接
触しながら回転することで研磨するようになっている。
この時、チャックテーブル１３は同時に反対方向に軸回
転される。The polishing wheel 11 is, for example, as shown in FIG.
It is mounted on the mounting portion 12a of the polishing device 12 as shown in FIG. That is, the semiconductor wafer W is held on the chuck table 13 movable in the Y-axis direction, and the polishing wheel 11 is moved to the wafer W by the spindle unit 14 movable in the Z-axis direction as shown in FIG. Polishing is performed by rotating while contacting with an appropriate pressure.
At this time, the chuck table 13 is simultaneously rotated in the opposite direction.
【００１１】（実験例）前記溶媒２として水（純水）、
砥粒３としてシリカ（ＳｉＯ2 ）、結合剤４としてアル
ギン酸ナトリウム、電解質として塩化カルシウムをそれ
ぞれ用いて砥石を形成し、研磨性能を実験した。 溶媒の水にシリカ（４０重量％）とアルギン酸ナト
リウム（１．５重量％）を混合し、攪拌して混濁液を形
成した。 ２００×１００×３０ｍｍの容器に混濁液を流し、
塩化カルシウム溶液（２０重量％）を静かに流し込ん
だ。 外側より凝固が起こり、２０分程度で全体がゾル状
の固形体（研磨砥石）になった。 ゾル状の固形体を乾燥させ、３０×１０×１５ｍｍ
のブロック（砥石片）を形成し、このブロックにより研
磨ホイールを形成して研削機械に取り付けた。 周速度６２ｍ／秒にて直径６インチのシリコンウェ
ーハに１０分間接触させて研磨したところ、以下のよう
な変化（表１）が見られた。(Experimental Example) As the solvent 2, water (pure water),
Grinding stones were formed by using silica (SiO 2 ) as the abrasive grains 3, sodium alginate as the binder 4, and calcium chloride as the electrolyte, and the polishing performance was tested. Silica (40% by weight) and sodium alginate (1.5% by weight) were mixed with solvent water and stirred to form a turbid solution. Pour the turbid liquid into a 200 x 100 x 30 mm container,
A calcium chloride solution (20% by weight) was gently poured. Solidification occurred from the outside, and the whole became a sol-like solid body (polishing grindstone) in about 20 minutes. Dry sol-like solid, 30 × 10 × 15mm
Block (grinding stone piece) was formed, and a polishing wheel was formed by this block and attached to a grinding machine. When a silicon wafer having a diameter of 6 inches was brought into contact with the silicon wafer at a peripheral speed of 62 m / sec for 10 minutes and polished, the following changes (Table 1) were observed.
【表１】 [Table 1]
【００１２】この実験結果によると、１０分間の接触研
磨にて平坦度（精密加工）、表面粗さ（加工歪み）が向
上しているのが分かり、この砥石の有為性を証明してい
る。又、これは一般的な例を示したもので、砥粒や結合
剤の濃度や材質を変更することで加工量、平坦度、表面
粗さの度合いをそれぞれ容易に設定し且つ向上させるこ
とが可能である。According to the result of this experiment, it was found that the flatness (precision processing) and the surface roughness (processing strain) were improved by the contact polishing for 10 minutes, demonstrating the significance of this grindstone. . In addition, this is a general example, and it is possible to easily set and improve the processing amount, the flatness, and the degree of surface roughness by changing the concentration and material of the abrasive grains and the binder. It is possible.
【００１３】[0013]
【発明の効果】以上説明したように、本発明によれば、
微細砥粒を均一密度に固形化することが出来るので、表
面粗さが小さく、加工変質層の生じない精密研磨の可能
な砥石を得ることが出来る効果を奏する。As described above, according to the present invention,
Since the fine abrasive grains can be solidified to a uniform density, it is possible to obtain a grindstone having a small surface roughness and capable of precision polishing without the occurrence of a work-affected layer.
【図１】 (イ) 〜(ホ) は本発明に係る研磨砥石及び研磨
ホイールの製造工程例を示す説明図である。1A to 1E are explanatory views showing an example of a manufacturing process of a polishing wheel and a polishing wheel according to the present invention.
【図２】 (イ) は研磨ホイールを装着した研磨装置の一
例を示す要部の斜視図、(ロ) はその研磨状態を示す一部
の側面図である。FIG. 2A is a perspective view of an essential part showing an example of a polishing device equipped with a polishing wheel, and FIG. 2B is a partial side view showing the polishing state.
【図３】 混濁液中における砥粒の分散状態を模式的に
示す説明図である。FIG. 3 is an explanatory diagram schematically showing a dispersion state of abrasive grains in a turbid liquid.
１…容器 ２…溶媒 ３…砥粒 ４…結合剤
５…混濁液 ６…水和層 ７…電解溶液 ８…研
磨砥石 ９…砥石片 １０…アルミ基台 １１…研磨ホイール １２…研磨装置 １２ａ…取
付部 １３…チャックテーブル １４…スピンドル
ユニット1 ... Container 2 ... Solvent 3 ... Abrasive Grain 4 ... Binder
5 ... Opacity liquid 6 ... Hydration layer 7 ... Electrolyte solution 8 ... Polishing grindstone 9 ... Grinding stone piece 10 ... Aluminum base 11 ... Polishing wheel 12 ... Polishing device 12a ... Attachment part 13 ... Chuck table 14 ... Spindle unit
Claims (2)
ム等の水和層を形成する溶液中に混入して混濁液を形成
し、その混濁液中に塩化カルシウム等の電解溶液を流し
込み凝固させて成る研磨砥石。1. An abrasive grain such as SiO 2 is mixed with a solution for forming a hydrated layer such as sodium alginate to form a turbid liquid, and an electrolytic solution such as calcium chloride is poured into the turbid liquid to coagulate. A grinding wheel made up of.
加工し、アルミ等から成る基台に配設固定した研磨ホイ
ール。2. A polishing wheel in which the polishing grindstone according to claim 1 is cut into an appropriate shape and arranged and fixed on a base made of aluminum or the like.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17299195A JPH091461A (en) | 1995-06-16 | 1995-06-16 | Grinding stone and grinding wheel using grinding stone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17299195A JPH091461A (en) | 1995-06-16 | 1995-06-16 | Grinding stone and grinding wheel using grinding stone |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH091461A true JPH091461A (en) | 1997-01-07 |
Family
ID=15952160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17299195A Pending JPH091461A (en) | 1995-06-16 | 1995-06-16 | Grinding stone and grinding wheel using grinding stone |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH091461A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001008848A1 (en) * | 1999-07-29 | 2001-02-08 | Saint-Gobain Abrasives, Inc. | Method for making microabrasive tools |
| JP2006043782A (en) * | 2004-07-30 | 2006-02-16 | Hitachi Maxell Ltd | Grinding/polishing tool with fixed abrasive grain and its manufacturing method, and grinding/polishing method for body to be polished using grinding/polishing tool with fixed abrasive grain |
| US9859681B2 (en) | 2015-05-13 | 2018-01-02 | Ricoh Company, Ltd. | Optical device and light irradiation apparatus |
-
1995
- 1995-06-16 JP JP17299195A patent/JPH091461A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001008848A1 (en) * | 1999-07-29 | 2001-02-08 | Saint-Gobain Abrasives, Inc. | Method for making microabrasive tools |
| US6375692B1 (en) | 1999-07-29 | 2002-04-23 | Saint-Gobain Abrasives Technology Company | Method for making microabrasive tools |
| AU766446B2 (en) * | 1999-07-29 | 2003-10-16 | Saint-Gobain Abrasives, Inc. | Method for making microabrasive tools |
| EP1393859A1 (en) * | 1999-07-29 | 2004-03-03 | Saint-Gobain Abrasives, Inc. | Microabrasive tool with a vitreous binder |
| US7015268B2 (en) | 1999-07-29 | 2006-03-21 | Saint-Gobain Abrasives Technology Company | Method for making microabrasive tools |
| CZ304546B6 (en) * | 1999-07-29 | 2014-07-02 | Saint-Gobain Abrasives, Inc. | Process for producing vitreously bonded microabrasive tool, slurry for making the same. process for producing green cast article and green cast article for making microabrasive tool |
| JP2006043782A (en) * | 2004-07-30 | 2006-02-16 | Hitachi Maxell Ltd | Grinding/polishing tool with fixed abrasive grain and its manufacturing method, and grinding/polishing method for body to be polished using grinding/polishing tool with fixed abrasive grain |
| US9859681B2 (en) | 2015-05-13 | 2018-01-02 | Ricoh Company, Ltd. | Optical device and light irradiation apparatus |
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