JPH09129946A - Magnetoresistive element - Google Patents
Magnetoresistive elementInfo
- Publication number
- JPH09129946A JPH09129946A JP7287180A JP28718095A JPH09129946A JP H09129946 A JPH09129946 A JP H09129946A JP 7287180 A JP7287180 A JP 7287180A JP 28718095 A JP28718095 A JP 28718095A JP H09129946 A JPH09129946 A JP H09129946A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetic layer
- magnetic
- magnetoresistive element
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/325—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being noble metal
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は非磁性層を挟み密接
して設けられた２つの磁性層を有する磁気抵抗素子に関
し，とくに熱的安定性に優れた非磁性層の材質に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive element having two magnetic layers provided in close contact with each other with a nonmagnetic layer sandwiched therebetween, and more particularly to a material of the nonmagnetic layer excellent in thermal stability.
【０００２】磁気抵抗効果を利用して磁場を検知する磁
気抵抗素子は，高密度磁気記録を高速に読出すために例
えば磁気ヘッドとして情報処理装置に用いられる。かか
る磁気抵抗素子では，例えばスピンバルブ膜又は他の巨
大磁気効果膜として，磁気抵抗効果を有効に利用するた
めに極めて薄い非磁性層を薄い磁性層で挟む構造が採用
されている。A magnetoresistive element for detecting a magnetic field by utilizing a magnetoresistive effect is used in an information processing apparatus as, for example, a magnetic head in order to read high-density magnetic recording at high speed. In such a magnetoresistive element, for example, as a spin valve film or another giant magnetic effect film, a structure in which an extremely thin non-magnetic layer is sandwiched by thin magnetic layers is adopted in order to effectively utilize the magnetoresistive effect.
【０００３】しかし，薄い多層膜は熱的安定性に劣り，
製造過程の熱処理工程，例えばレジストのベーキング工
程により容易に各薄層間相互の拡散を生じ，性能が劣化
する。このため，熱的安定性に優れた非磁性層が要望さ
れている。However, the thin multilayer film is inferior in thermal stability,
A heat treatment step in the manufacturing process, such as a resist baking step, easily causes mutual diffusion between the thin layers, resulting in deterioration of performance. Therefore, there is a demand for a non-magnetic layer having excellent thermal stability.
【０００４】[0004]
【従来の技術】非磁性層を磁気層で挟む構造の磁気抵抗
素子について，従来の磁気ヘッドを参照して説明する。2. Description of the Related Art A magnetoresistive element having a structure in which a nonmagnetic layer is sandwiched between magnetic layers will be described with reference to a conventional magnetic head.
【０００５】図１は，磁気ヘッド用磁気抵抗素子構造説
明図であり，スピンバルブ膜を用いた磁気抵抗素子を表
している。なお，図１（ａ）は正面断面図，図１（ｂ）
は一部破断斜視図であり，共にスピンバルブ膜の形状と
積層構造とを表している。FIG. 1 is an explanatory view of the structure of a magnetoresistive element for a magnetic head, showing a magnetoresistive element using a spin valve film. 1 (a) is a front sectional view, FIG. 1 (b).
6 is a partially cutaway perspective view showing both the shape of the spin valve film and the laminated structure.
【０００６】図１（ａ）及び（ｂ）を参照して，従来の
磁気ヘッドに用いられる磁気抵抗素子は，基板１表面に
堆積された下地層２上に，第一の磁性層３，非磁性層
４，第二の磁性層５，反強磁性層６及び保護層７がこの
順に積層された長方形パターンが形成される。さらに，
この長方形パターンの両端部上面にそれぞれ電極８が設
けられる。Referring to FIGS. 1A and 1B, a magnetoresistive element used in a conventional magnetic head has a structure in which a first magnetic layer 3 and a non-magnetic layer 3 are formed on an underlayer 2 deposited on a surface of a substrate 1. A rectangular pattern in which the magnetic layer 4, the second magnetic layer 5, the antiferromagnetic layer 6 and the protective layer 7 are laminated in this order is formed. further,
Electrodes 8 are provided on the upper surfaces of both ends of this rectangular pattern.
【０００７】下地層２は，その上に堆積する第一の磁性
層３の磁気特性を向上させるために設けられる。第一の
磁性層３は，通常は保持力が小さな磁性材料からなり，
検知すべき磁場により磁化方向が変化する。非磁性層４
は導電性材料，例えばＣｕ，等の金属薄膜からなる。第
二の磁性層５は，これに密接する反強磁性層６からの交
換相互作用より一定の磁化方向に固定される。かかる積
層構造を有するスピンバルブ膜９の巨大磁気抵抗効果
は，第一の磁性層３の磁化方向が磁場により変化し，第
二の磁性層５の固定された磁化方向から傾くことにより
生ずる。保護層７は反強磁性層６及び第二の磁性層５の
劣化を防止するために設けられる。一対の電極８は，ス
ピンバルブ膜９に電流を流し，磁気抵抗効果による抵抗
変化を検出するために設けられる。The underlayer 2 is provided to improve the magnetic characteristics of the first magnetic layer 3 deposited thereon. The first magnetic layer 3 is usually made of a magnetic material having a small coercive force,
The magnetization direction changes depending on the magnetic field to be detected. Non-magnetic layer 4
Is a conductive material, for example, a thin metal film of Cu or the like. The second magnetic layer 5 is fixed in a fixed magnetization direction by the exchange interaction from the antiferromagnetic layer 6 in close contact with the second magnetic layer 5. The giant magnetoresistive effect of the spin valve film 9 having such a laminated structure occurs when the magnetization direction of the first magnetic layer 3 changes due to the magnetic field and tilts from the fixed magnetization direction of the second magnetic layer 5. The protective layer 7 is provided to prevent deterioration of the antiferromagnetic layer 6 and the second magnetic layer 5. The pair of electrodes 8 is provided to pass a current through the spin valve film 9 and detect a resistance change due to the magnetoresistive effect.
【０００８】上述した構造を持つスピンバルブ膜９は，
２つの薄い磁性層３，５が薄い非磁性層４を挟み密接し
て設けられている。このため，スピンバルブ膜９を積層
した後の工程における熱処理，例えばスピンバルブ膜９
のパターニングに用いるレジストのベーキングにより，
非磁性層４を構成する元素が磁性層３，５中に拡散し，
スピンバルブ膜の磁気抵抗効果特性を劣化させる。かか
る非磁性層を構成する元素が磁性層中へ拡散して引き起
こされる磁気抵抗特性の劣化は，非磁性層と磁性層とが
密接して積層される構造を有する他の磁気抵抗素子につ
いても同様に生ずる。The spin valve film 9 having the above structure is
Two thin magnetic layers 3 and 5 are provided in close contact with each other with the thin non-magnetic layer 4 interposed therebetween. Therefore, heat treatment in the process after the spin valve film 9 is stacked, for example, the spin valve film 9 is performed.
By baking the resist used for patterning
Elements constituting the non-magnetic layer 4 diffuse into the magnetic layers 3 and 5,
It deteriorates the magnetoresistive effect characteristics of the spin valve film. The deterioration of the magnetoresistive characteristics caused by the diffusion of the elements constituting the nonmagnetic layer into the magnetic layer is the same in other magnetoresistive elements having a structure in which the nonmagnetic layer and the magnetic layer are closely stacked. Occur in.
【０００９】かかる拡散による磁気抵抗素子の劣化を防
止するため，非磁性層４の材料をＣｕに代えて，拡散係
数が小さなＡｇ又はＡｕとする検討がなされた。しか
し，Ａｇ及びＡｕは加熱されると島状に凝集する。この
ため，これらの元素から構成された非磁性層４は熱処理
により磁性層３，５との界面に凹凸を生じ，その結果磁
気抵抗効果の劣化を招く。In order to prevent the deterioration of the magnetoresistive element due to such diffusion, studies have been made to replace the material of the nonmagnetic layer 4 with Cu and use Ag or Au having a small diffusion coefficient. However, Ag and Au aggregate in an island shape when heated. Therefore, the non-magnetic layer 4 made of these elements is uneven at the interface with the magnetic layers 3 and 5 by heat treatment, resulting in deterioration of the magnetoresistive effect.
【００１０】[0010]
【発明が解決しようとする課題】上述したように，従来
の非磁性層にＣｕを用いた磁気抵抗素子では，熱処理に
より非磁性層に密接する磁性層中にＣｕが拡散して磁気
抵抗効果を劣化するという問題がある。他方，非磁性層
に拡散係数の小さなＡｇ又はＡｕを用いた磁気抵抗素子
では，非磁性層と磁性層との界面に凹凸を生じるため磁
気抵抗効果が劣化するという問題がある。As described above, in the conventional magnetoresistive element using Cu in the non-magnetic layer, Cu is diffused into the magnetic layer in close contact with the non-magnetic layer by heat treatment so that the magneto-resistive effect can be obtained. There is a problem of deterioration. On the other hand, a magnetoresistive element using Ag or Au having a small diffusion coefficient in the nonmagnetic layer has a problem that the magnetoresistive effect is deteriorated because unevenness is generated at the interface between the nonmagnetic layer and the magnetic layer.
【００１１】本発明は，非磁性層を，Ｃｕ−Ａｕ合金，
特に規則格子を形成するＣｕ3 Ａｕ相により構成するこ
とで，磁性層の結晶性を劣化させず，また磁性層へのＣ
ｕの拡散及び非磁性層界面の凹凸の発生を防止し，優れ
た磁気特性を有しかつ熱的安定性に優れた磁気抵抗素子
を提供することを目的としている。In the present invention, the non-magnetic layer is made of a Cu--Au alloy,
In particular, by using a Cu 3 Au phase forming a regular lattice, the crystallinity of the magnetic layer is not deteriorated and the C content of the magnetic layer is reduced.
It is an object of the present invention to provide a magnetoresistive element which has excellent magnetic characteristics and thermal stability by preventing the diffusion of u and the occurrence of irregularities at the interface of the non-magnetic layer.
【００１２】[0012]
【課題を解決するための手段】図２は本発明の実施形態
例積層構造図であり，磁気抵抗素子を構成する磁気抵抗
膜の積層構造を表している。FIG. 2 is a diagram showing a laminated structure of an embodiment of the present invention, showing a laminated structure of magnetoresistive films constituting a magnetoresistive element.
【００１３】図２を参照して，上記課題を解決するため
の本発明の第一の構成は，第一の磁性層３と，該第一の
磁性層３上に密接する非磁性層４と，該非磁性層４上に
密接する第二の磁性層５とを有する磁気抵抗素子におい
て，該非磁性層４は，Ｃｕ及びＡｕの合金からなること
を特徴として構成し，及び，第二の構成は，第一の構成
の磁気抵抗素子において，該非磁性層４は，１９原子％
〜３７原子％のＡｕを含み，残部がＣｕ及び残留元素か
らなる合金であることを特徴として構成し，及び，第三
の構成は，第二の構成の磁気抵抗素子において，該非磁
性層４は，規則合金相又は該規則合金相を含む合金から
なることを特徴として構成し，及び，第四の構成は，第
一の構成の磁気抵抗素子において，該非磁性層４は，Ｃ
ｕ3Ａｕ相又はＣｕ3 Ａｕ相を含む固溶体合金からなる
ことを特徴として構成し，及び，第五の構成は，第一の
構成〜第四の構成の何れかの構成の磁気抵抗素子におい
て，該第一の磁性層３及び該第二の磁性層５は，面心立
方晶の磁性材料からなることを特徴として構成する。Referring to FIG. 2, the first constitution of the present invention for solving the above-mentioned problems is to provide a first magnetic layer 3 and a non-magnetic layer 4 which is in close contact with the first magnetic layer 3. In the magnetoresistive element having the second magnetic layer 5 in close contact with the nonmagnetic layer 4, the nonmagnetic layer 4 is made of an alloy of Cu and Au, and the second configuration is In the magnetoresistive element of the first structure, the nonmagnetic layer 4 contains 19 atomic%
.About.37 atomic% Au, the balance being an alloy consisting of Cu and residual elements, and the third constitution is the magnetoresistive element of the second constitution, wherein the non-magnetic layer 4 is , A regular alloy phase or an alloy containing the ordered alloy phase, and a fourth structure is a magnetoresistive element of the first structure, wherein the nonmagnetic layer 4 is C.
It is characterized in that it is made of a solid solution alloy containing a u 3 Au phase or a Cu 3 Au phase, and a fifth constitution is the magnetoresistive element of any one of the first constitution to the fourth constitution, The first magnetic layer 3 and the second magnetic layer 5 are characterized in that they are made of a face-centered cubic magnetic material.
【００１４】本発明の第一の構成では，非磁性層４をＣ
ｕ−Ａｕ合金とする。Ｃｕ−Ａｕ合金はＣｕの拡散係数
が小さいため，非磁性層４と接する磁性層３，５へのＣ
ｕの熱拡散が少ない。また，Ａｕのように熱処理により
凝集しないので，非磁性層４と磁性層３，５界面に凹凸
を生じない。従って，本構成の磁気抵抗素子は熱処理に
おける磁気抵抗効果の劣化が少ない。In the first structure of the present invention, the nonmagnetic layer 4 is made of C.
It is a u-Au alloy. Since the Cu-Au alloy has a small Cu diffusion coefficient, the C in the magnetic layers 3 and 5 in contact with the non-magnetic layer 4 is reduced.
Little heat diffusion of u. Further, unlike Au, it does not aggregate by heat treatment, so that no unevenness is generated at the interface between the non-magnetic layer 4 and the magnetic layers 3 and 5. Therefore, the magnetoresistive element of this structure has little deterioration in the magnetoresistive effect during heat treatment.
【００１５】図３はＣｕ−Ａｕ状態図であり，Ｃｕ−Ａ
ｕ固溶体から析出する３種類の相を表している。図４は
結晶構造図であり，図４（ａ）〜（ｃ）はそれぞれＣｕ
−Ａｕ固溶体，Ｃｕ3 Ａｕ相及びＣｕＡｕ相の結晶格子
を，図４（ｄ）はＣｕＡｕ相の長距離秩序を表してい
る。FIG. 3 is a Cu-Au phase diagram.
It shows three types of phases precipitated from the u solid solution. FIG. 4 is a crystal structure diagram, and FIGS. 4A to 4C respectively show Cu.
-Au solid solution, the crystal lattice of the Cu 3 Au-phase and CuAu phase, FIG. 4 (d) represents the long-range order of the CuAu phase.
【００１６】かかる規則合金相は，熱的に安定なためＣ
ｕの拡散係数が固溶体よりも小さい。従って，非磁性層
４をこれら規則合金相自体又はこれら規則合金相を含む
合金とすることで，非磁性層４に接する磁性層３，５へ
のＣｕの拡散が抑制され，磁性層３，５へのＣｕ拡散に
起因する磁気抵抗効果の劣化を小さくすることができ
る。Since the ordered alloy phase is thermally stable, C
The diffusion coefficient of u is smaller than that of the solid solution. Therefore, when the nonmagnetic layer 4 is made of the ordered alloy phase itself or an alloy containing these ordered alloy phases, diffusion of Cu into the magnetic layers 3 and 5 in contact with the nonmagnetic layer 4 is suppressed, and the magnetic layers 3 and 5 are It is possible to reduce the deterioration of the magnetoresistive effect due to the diffusion of Cu into Cu.
【００１７】第二の構成では，非磁性層４を構成するＣ
ｕ−Ａｕ合金の組成を，１９原子％〜３７原子％のＡｕ
を含み，残部を実質的にＣｕとする。この組成範囲で
は，図３を参照して，熱処理においてＣｕ3 Ａｕ相のみ
が析出する。In the second structure, C constituting the nonmagnetic layer 4 is formed.
The composition of the u-Au alloy is 19 atomic% to 37 atomic% Au.
And the balance is substantially Cu. In this composition range, referring to FIG. 3, only the Cu 3 Au phase precipitates during the heat treatment.
【００１８】図４（ａ）を参照して，Ｃｕ−Ａｕ固溶体
の結晶格子は格子定数ａの面心立方格子をなし，銅又は
金の原子が各格子点を同じ占有確率で占拠する。Ｃｕ3
Ａｕ相は，図４（ｂ）を参照して，Ｃｕ−Ａｕ固溶体の
面心立方格子の頂点を金原子が占拠し，面心位置を銅原
子が占拠した立方格子を結晶格子とし，この結晶格子は
Ｃｕ−Ａｕ固溶体の面心立方格子と格子定数が略等しい
立方格子をなす。このように，Ｃｕ3 Ａｕ相はＣｕ−Ａ
ｕ固溶体と略同じ格子定数を有しかつ銅及び金原子位置
が同じ面心立方位置を占めるため，析出により非磁性層
４の結晶格子の大きさ及び原子位置は殆ど変化しない。
このため，相変化に伴う結晶構造の変化が非磁性層４と
接する磁性層３，５の結晶性に及ぼす影響は小さく，磁
性層３，５の結晶性の劣化は少ない。従って，本構成の
磁気抵抗素子は熱処理における磁気抵抗効果の劣化が少
ない。With reference to FIG. 4 (a), the crystal lattice of the Cu-Au solid solution forms a face-centered cubic lattice having a lattice constant a, and copper or gold atoms occupy each lattice point with the same occupation probability. Cu 3
As for the Au phase, referring to FIG. 4B, the apex of the face-centered cubic lattice of the Cu—Au solid solution is occupied by gold atoms, and the face-centered position is occupied by copper atoms. The lattice is a cubic lattice having a lattice constant substantially equal to that of a face-centered cubic lattice of Cu-Au solid solution. Thus, the Cu 3 Au phase is Cu-A
Since it has substantially the same lattice constant as the u solid solution and the copper and gold atomic positions occupy the same face-centered cubic positions, the crystal lattice size and atomic position of the nonmagnetic layer 4 hardly change due to precipitation.
Therefore, the change in the crystal structure due to the phase change has a small effect on the crystallinity of the magnetic layers 3 and 5 in contact with the non-magnetic layer 4, and the deterioration of the crystallinity of the magnetic layers 3 and 5 is small. Therefore, the magnetoresistive element of this structure has little deterioration in the magnetoresistive effect during heat treatment.
【００１９】なお，ＣｕＡｕ相が析出する組成でも，安
定相の形成による拡散係数の減少にともない，磁気層
３，５の劣化を小さくする効果を奏する。しかし，Ｃｕ
Ａｕ相は，図４（ｃ）を参照して，面心立方格子の（１
００）面を金原子面が，１／２（１００）面を銅原子面
が占め，＜１００＞軸に垂直に金原子面と銅原子面とが
交互に積層した結晶格子を有する。このため，結晶格子
は立方格子とはならず，金及び銅の原子面に垂直な軸を
ｃ軸とする正方格子となる。さらに，かかるＣｕＡｕ相
は，金原子面と銅原子面との積層欠陥を生じ，図４
（ｄ）を参照して，複数の正方格子からなる格子定数ｂ
の超格子を形成する。このように，ＣｕＡｕ相とＣｕ−
Ａｕ固溶体とは結晶格子が異なり，かつＣｕＡｕ相には
積層欠陥を伴う長距離秩序が形成されるため，非磁性層
４の相変化が磁性層の磁気特性に好ましくない影響を及
ぼす。非磁性層をＣｕ3 Ａｕ相とする場合は，かかる影
響を回避することができる。Even with the composition in which the CuAu phase is precipitated, the effect of reducing the deterioration of the magnetic layers 3 and 5 with the decrease of the diffusion coefficient due to the formation of the stable phase is exerted. However, Cu
As for the Au phase, referring to FIG. 4 (c), (1
A gold atomic plane occupies the (00) plane and a copper atomic plane occupies the ½ (100) plane, and has a crystal lattice in which gold atomic planes and copper atomic planes are alternately laminated perpendicularly to the <100> axis. Therefore, the crystal lattice does not become a cubic lattice, but becomes a tetragonal lattice having an axis perpendicular to the atomic planes of gold and copper as the c-axis. Furthermore, the CuAu phase causes stacking faults between the gold atomic planes and the copper atomic planes.
Referring to (d), the lattice constant b composed of a plurality of square lattices
Form a superlattice of. Thus, CuAu phase and Cu-
Since the crystal lattice is different from that of the Au solid solution, and the long-range order with the stacking fault is formed in the CuAu phase, the phase change of the nonmagnetic layer 4 adversely affects the magnetic characteristics of the magnetic layer. When the non-magnetic layer is made of Cu 3 Au phase, such influence can be avoided.
【００２０】なお，上述した第二の構成において，非磁
性層４中のＣｕの拡散係数が小さく，かつ面心立方晶を
維持するＣｕ−Ａｕ合金組成であれば，他の元素が添加
されていても何ら差支えない。In the above-mentioned second structure, other elements are added as long as the diffusion coefficient of Cu in the nonmagnetic layer 4 is small and the composition is a Cu-Au alloy that maintains face-centered cubic crystal. But it doesn't matter.
【００２１】さらに，上述した拡散係数を減少し及び析
出に伴う結晶格子の変化を小さくするという観点から，
非磁性層４をＣｕ3 Ａｕ相から構成することが好まし
い。また，上述した本発明の全ての構成において，磁性
層３，５を面心立方晶の磁性材料とすることが，これら
と接する非磁性層４の結晶格子と整合させ，磁性層３，
５及び非磁性層４の結晶性，配向性を向上して磁気抵抗
効果を大きくするという観点から好ましい。Further, from the viewpoint of reducing the above diffusion coefficient and reducing the change of the crystal lattice due to precipitation,
It is preferable that the nonmagnetic layer 4 is composed of a Cu 3 Au phase. Further, in all the configurations of the present invention described above, making the magnetic layers 3 and 5 a face-centered cubic magnetic material matches the crystal lattice of the non-magnetic layer 4 that is in contact with them, and
5 and the non-magnetic layer 4 are preferable from the viewpoint of improving the crystallinity and orientation and increasing the magnetoresistive effect.
【００２２】[0022]
【発明の実施の形態】本発明に係る磁気抵抗素子を，磁
気ヘッドに適用した実施態様例を参照して説明する。本
実施態様例は，図１を参照して，スピンバルブ膜９を磁
気検出部とする磁気抵抗素子に関する。BEST MODE FOR CARRYING OUT THE INVENTION A magnetoresistive element according to the present invention will be described with reference to an embodiment example applied to a magnetic head. The example of the present embodiment relates to a magnetoresistive element using the spin valve film 9 as a magnetic detection portion with reference to FIG.
【００２３】先ず，図２を参照して，（１００）面を主
面とするシリコン基板１上に，スパッタ法を用いて，厚
さ６nmのＴａからなる下地層２，厚さ９nmの８３原子％
Ｎｉ−１７原子％Ｆｅ合金からなる磁性層３，厚さ２．
５nmの７５原子％Ｃｕ−２５原子％Ａｕ合金からなる非
磁性層４，厚さ４nmの８３原子％Ｎｉ−１７原子％Ｆｅ
合金からなる磁性層５及び厚さ１２nmのＦｅ─Ｍｎ合金
からなる反強磁性層６，厚さ７nmのＴａからなる保護層
７を順次堆積する。このスパッタは，磁性層３，５及び
反強磁性層６に一定方向の磁化容易軸を形成するため
に，シリコン基板１の主面に平行に印加された３０Oeの
磁場中でなされる。また，スパッタは，０．５PaのＡｒ
を高周波出力５０Ｗで励起するマグネトロンスパッタに
よりなされた。First, referring to FIG. 2, an underlayer 2 made of Ta having a thickness of 6 nm and 83 atoms having a thickness of 9 nm are formed on a silicon substrate 1 having a (100) plane as a main surface by a sputtering method. %
1. Magnetic layer made of Ni-17 atomic% Fe alloy 3, thickness 2.
5 nm non-magnetic layer consisting of 75 at% Cu-25 at% Au alloy 4, thickness of 4 nm 83 at% Ni-17 at% Fe
A magnetic layer 5 made of an alloy, an antiferromagnetic layer 6 made of a Fe—Mn alloy having a thickness of 12 nm, and a protective layer 7 made of Ta having a thickness of 7 nm are sequentially deposited. This sputtering is performed in a magnetic field of 30 Oe applied parallel to the main surface of the silicon substrate 1 in order to form an easy axis of magnetization in the magnetic layers 3 and 5 and the antiferromagnetic layer 6. In addition, spatter is 0.5 Pa Ar
Was excited with a high frequency output of 50 W by magnetron sputtering.
【００２４】次いで，真空中で２３０℃，２時間の熱処
理をした。この熱処理により，非磁性層４をＣｕ3 Ａｕ
相とする。なお，非磁性層４の一部をＣｕ3 Ａｕ相に変
換するものでもよい。Next, heat treatment was performed in vacuum at 230 ° C. for 2 hours. By this heat treatment, the non-magnetic layer 4 is formed into Cu 3 Au.
To be a phase. Incidentally, a part of the non-magnetic layer 4 may be converted into the Cu 3 Au phase.
【００２５】次いで，通常のスピンバルブ膜を用いる磁
気ヘッドの製造工程と同様に，保護層７上に長方形のレ
ジストパターンを形成し，このレジストパターンをマス
クとするイオンエッチングにより保護層７及び反強磁性
層６乃至磁性層３からなる長方形のスピンバルブ膜を形
成する。ついで，スピンバルブ膜９の両端に電極８を形
成して磁気ヘッド用の磁気抵抗素子が製造される。Then, a rectangular resist pattern is formed on the protective layer 7, and the protective layer 7 and the anti-reinforcement layer are formed by ion etching using the resist pattern as a mask, as in the manufacturing process of a magnetic head using a normal spin valve film. A rectangular spin valve film including the magnetic layers 6 to 3 is formed. Next, electrodes 8 are formed on both ends of the spin valve film 9 to manufacture a magnetoresistive element for a magnetic head.
【００２６】本実施形態例により製造されたスピンバル
ブ膜９は，２６０℃でなされたレジストのベーキングに
よっても磁気抵抗効果の劣化が観測されなかった。従来
は磁気抵抗効果の劣化が，非磁性層がＣｕの場合には２
３０℃で観測され，またＣｕ−Ａｇ合金の場合には２５
０℃で観測されたのに比べ，本実施形態例では大幅に熱
安定性が改善されている。In the spin valve film 9 manufactured according to this embodiment, no deterioration of the magnetoresistive effect was observed even when the resist was baked at 260 ° C. Conventionally, the deterioration of the magnetoresistive effect is 2 if the non-magnetic layer is Cu.
Observed at 30 ° C, and in the case of Cu-Ag alloy 25
In comparison with what was observed at 0 ° C., the thermal stability is greatly improved in this embodiment.
【００２７】[0027]
【発明の効果】上述したように，本発明によれば，磁性
層と接する非磁性層中のＣｕ拡散が小さくかつ非磁性層
の結晶格子が熱処理により変化しないので，磁性層への
Ｃｕ拡散が少なくかつ結晶性が良好に保持されるため，
熱的安定性に優れた磁気抵抗素子を提供することがで
き，磁気装置の性能向上に寄与するところが大きい。As described above, according to the present invention, Cu diffusion in the non-magnetic layer in contact with the magnetic layer is small and the crystal lattice of the non-magnetic layer is not changed by heat treatment, so that Cu diffusion in the magnetic layer is prevented. Since the amount is small and the crystallinity is maintained well,
It is possible to provide a magnetoresistive element having excellent thermal stability, which greatly contributes to improving the performance of the magnetic device.
【図１】 磁気ヘッド用磁気抵抗素子構造説明図FIG. 1 is an explanatory diagram of the structure of a magnetoresistive element for a magnetic head.
【図２】 本発明の実施形態例積層構造図FIG. 2 is a layered structure diagram of an embodiment of the present invention.
【図３】 Ｃｕ−Ａｕ状態図FIG. 3 Cu-Au phase diagram
【図４】 結晶構造図FIG. 4 Crystal structure diagram
１ 基板 ２ 下地層 ３ 磁性層 ４ 非磁性層 ５ 磁性層 ６ 反強磁性層 ７ 保護層 ８ 電極 ９ スピンバルブ膜 1 Substrate 2 Underlayer 3 Magnetic layer 4 Nonmagnetic layer 5 Magnetic layer 6 Antiferromagnetic layer 7 Protective layer 8 Electrode 9 Spin valve film
Claims (5)
接する非磁性層と，該非磁性層上に密接する第二の磁性
層とを有する磁気抵抗素子において，該非磁性層は，Ｃ
ｕ及びＡｕの合金からなることを特徴とする磁気抵抗素
子。1. A magnetoresistive element comprising a first magnetic layer, a non-magnetic layer in close contact with the first magnetic layer, and a second magnetic layer in close contact with the non-magnetic layer, the non-magnetic layer Is C
A magnetoresistive element comprising an alloy of u and Au.
該非磁性層は，１９原子％〜３７原子％のＡｕを含み，
残部がＣｕ及び残留元素からなる合金であることを特徴
とする磁気抵抗素子。2. The magnetoresistive element according to claim 1,
The non-magnetic layer contains 19 atomic% to 37 atomic% Au,
A magnetoresistive element, wherein the balance is an alloy composed of Cu and a residual element.
該非磁性層は，規則合金相又は該規則合金相を含む合金
からなることを特徴とする磁気抵抗素子。3. The magnetoresistive element according to claim 2,
The magnetoresistive element, wherein the non-magnetic layer is composed of an ordered alloy phase or an alloy containing the ordered alloy phase.
該非磁性層は，Ｃｕ3 Ａｕ相又はＣｕ3 Ａｕ相を含む固
溶体合金からなることを特徴とする磁気抵抗素子。4. The magnetoresistive element according to claim 1,
The magnetoresistive element, wherein the non-magnetic layer is made of Cu 3 Au phase or a solid solution alloy containing Cu 3 Au phase.
た磁気抵抗素子において，該第一の磁性層及び該第二の
磁性層は，面心立方晶の磁性材料からなることを特徴と
する磁気抵抗素子。5. The magnetoresistive element according to claim 1, wherein the first magnetic layer and the second magnetic layer are made of a face-centered cubic crystal magnetic material. Characteristic magnetoresistive element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7287180A JPH09129946A (en) | 1995-11-06 | 1995-11-06 | Magnetoresistive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7287180A JPH09129946A (en) | 1995-11-06 | 1995-11-06 | Magnetoresistive element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09129946A true JPH09129946A (en) | 1997-05-16 |
Family
ID=17714121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7287180A Withdrawn JPH09129946A (en) | 1995-11-06 | 1995-11-06 | Magnetoresistive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09129946A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6258283B1 (en) | 1998-03-20 | 2001-07-10 | Fuuitsu Limited | Method of making magnetic resistance element |
-
1995
- 1995-11-06 JP JP7287180A patent/JPH09129946A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6258283B1 (en) | 1998-03-20 | 2001-07-10 | Fuuitsu Limited | Method of making magnetic resistance element |
| US6475649B2 (en) | 1998-03-20 | 2002-11-05 | Fujitsu Limited | Magnetic head |
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