JPH09129701A - Multi-chamber device and its wafer inspecting method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To calculate the deviating of a transparent or silicon dummy wafer by providing a wafer carrying accuracy detecting means for a wafer carrying chamber. SOLUTION: A wafer carrying accuracy detecting means 7 is constituted of a light source 8 which projects light upon a transparent dummy wafer 4 and a transparent blade 5 before and after the blade 5 is moved, an image receiving section 9 composed of a camera, etc., which takes the pictures of the wafer 4 and blade 5, an output section 10 composed of a monitor, etc., which displays the pictures taken by means of the section 9 and has ruled lines 22, and an arithmetic section 12 which calculates the deviation of the wafer 4 from the blade 5 based on a coincident point and provided for a wafer carrying chamber 2. Since the scale of the blade 5 is marked as the vernier of the ruled lines of the wafer 4, the carrying accuracy of the wafer 4 can be improved by detecting the positional deviation of the wafer 4 on the blade by utilizing the vernier.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multi-chamber apparatus in semiconductor manufacturing technology, and more particularly to a multi-chamber apparatus capable of detecting positional accuracy during semiconductor wafer transfer and a wafer inspection method for the same.

[0002]

2. Description of the Related Art The technology described below studies the present invention,
The present invention was studied by the present inventors upon completion, and its outline is as follows.

A multi-chamber apparatus is known as a semiconductor manufacturing apparatus in which a semiconductor wafer is processed in a consistent atmosphere.

The multi-chamber apparatus has been manufactured by semiconductor device manufacturers in Japan and overseas as one of the developments of the semiconductor manufacturing apparatus in the future for the following reasons.

(1). Since the multi-chamber apparatus can consistently process semiconductor wafers in a vacuum or an inert gas atmosphere, it is possible to prevent contamination from the outside when forming each layer. As a result, it is possible to improve the quality in wafer processing and further stabilize the quality.

(2). Since this is an integrated process in the multi-chamber apparatus, the time required for wafer transfer can be reduced, and the overall process can be shortened.

(3). In the multi-chamber system, in order to support new process processing, only the process chamber, which is a component of the multi-chamber system, is newly manufactured, and the wafer transfer robot unit (wafer transfer chamber), load lock chamber, etc. Since it can be used, the cost as a semiconductor manufacturing device can be reduced.

Under the above-mentioned background, in the multi-chamber apparatus, a set of wafer loader and unloader is installed around the wafer transfer chamber, and a plurality of process chambers are installed in the vicinity thereof.

Therefore, the accuracy of the wafer position on the wafer transfer blade (wafer supporting member) in the wafer transfer chamber is important for improving the reliability of wafer transfer between the process chamber and the wafer transfer chamber. .

Therefore, in wafer transfer, the accuracy of the wafer installation position on the wafer transfer blade is controlled, and the wafer position on the wafer sample stage in the process chamber is set for that position. However, in order to inspect the relative position accuracy, the processing system is exposed to the atmosphere and the relative position accuracy is visually inspected (confirmed).

The relative position between the wafer carrying blade and the semiconductor wafer is measured by actually measuring the distance from a predetermined reference position.

The multi-chamber apparatus is described in, for example, August 1, 1993, Nikkei BP, August 1993, "Nikkei Microdevice", pages 33 to 39.

[0013]

However, the following problems are conceivable in the above-mentioned technique.

(1). An integrated device such as a multi-chamber device is a closed processing system filled with an inert gas. Furthermore, when measuring the relative positional accuracy between the wafer transfer blade of the multi-chamber apparatus and the semiconductor wafer, it is necessary to expose the processing system to the atmosphere. Therefore, the atmosphere of the processing system is deteriorated for the measurement, which is disadvantageous for increasing the actual working time of the multi-chamber apparatus.

(2). Since the multi-chamber apparatus is provided with a process chamber mainly for process processing, when a semiconductor wafer is transferred between the wafer transfer chamber and the process chamber, a mechanism for inspecting the position accuracy of the semiconductor wafer is used as a processing system. Not incorporated inside.

(3). Time to inspect the position accuracy of transfer between the wafer transfer chamber and each process chamber is
When the number of process chambers forming the multi-chamber apparatus increases, the number of process chambers increases in proportion to the number of process chambers, and thus individual detailed inspection is not practical.

An object of the present invention is to provide a multi-chamber apparatus capable of inspecting the positional accuracy of a semiconductor wafer during transportation and a wafer inspection method for the same.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0019]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, the multi-chamber apparatus of the present invention is provided with a basic wafer transfer chamber, a process chamber connected to the wafer transfer chamber for processing a semiconductor wafer, and a grid line on the front or back surface. Transparent dummy wafer, and a transparent wafer supporting the transparent dummy wafer and moving between the wafer transfer chamber and the process chamber and provided on the front surface or the back surface with a sub-scale graduation in a grid shape slightly smaller than the grid shape. A displacement amount of the transparent dummy wafer is detected based on a position where the support member and the grid-shaped ruled line of the transparent dummy wafer after the movement of the transparent wafer support member and the grid-shaped sub-scale of the transparent wafer support member coincide with each other. And a wafer transfer accuracy detecting means for controlling the wafer transfer accuracy. Those provided in the chamber.

Thus, the transparent dummy wafer having the grid-like ruled lines on the front surface or the back surface is supported by the transparent wafer supporting member having the grid-like sub-scales slightly smaller than the grid shape on the front surface or the back surface. After the movement, the positional deviation amount of the transparent dummy wafer with respect to the wafer supporting member can be calculated by the wafer transfer accuracy detecting means.

As a result, the relative positional deviation between the semiconductor wafer and the wafer supporting member in the wafer transfer of the multi-chamber apparatus can be inspected quantitatively and in a short time based on the positional deviation amount. The accuracy can be detected.

Further, in the multi-chamber apparatus of the present invention, the wafer transfer accuracy detecting means irradiates the transparent dummy wafer and the transparent wafer supporting member with light before and after the movement of the transparent wafer supporting member, and the light source. An image receiving unit that captures the images of the transparent dummy wafer and the transparent wafer supporting member projected by, an output unit that displays the image captured by the image receiving unit, and a displacement amount of the transparent dummy wafer based on the coincident position. And a calculation unit for calculating.

Further, the multi-chamber device of the present invention is
A basic wafer transfer chamber, a process chamber connected to the wafer transfer chamber and used for processing semiconductor wafers, a transparent dummy wafer having grid lines on the front surface or the back surface, and a support for the transparent dummy wafer. An opaque wafer support member that moves between the wafer transfer chamber and the process chamber and is provided with a lattice-shaped sub-scale on the wafer support surface that is slightly smaller than the lattice-like, and an opaque wafer support member after the movement of the opaque wafer support member. Wafer transfer accuracy detecting means for detecting the positional deviation amount of the transparent dummy wafer based on the matching position between the grid-like ruled lines of the transparent dummy wafer and the grid-like vernier scale of the opaque wafer supporting member, A transfer accuracy detecting means is provided in the wafer transfer chamber.

The multi-chamber apparatus of the present invention is provided with a basic wafer transfer chamber, a process chamber connected to the wafer transfer chamber for processing semiconductor wafers, and a grid-like ruled line on the back surface. A silicon dummy wafer, and a transparent wafer that supports the silicon dummy wafer and moves between the wafer transfer chamber and the process chamber, and has a lattice-shaped sub-scale graduation slightly smaller than the lattice-shaped on the wafer supporting surface. A displacement amount of the silicon dummy wafer based on a position where the support member and the grid-like ruled line of the silicon dummy wafer after the movement of the transparent wafer support member and the grid-like sub-scale mark of the transparent wafer support member coincide with each other. And a wafer transfer accuracy detecting means for detecting the wafer transfer accuracy. Those provided in Nba.

Further, in the wafer inspection method of the multi-chamber apparatus of the present invention, a transparent dummy wafer or a silicon dummy wafer having grid-shaped ruled lines on the front surface or the back surface is formed on the front surface or the back surface in a grid pattern slightly smaller than the grid pattern. Supported by a transparent or opaque wafer supporting member provided with a vernier scale of, and moving the transparent or opaque wafer supporting member between a basic wafer transfer chamber and a process chamber connected to the wafer transfer chamber, The position shift amount of the transparent dummy wafer or the silicon dummy wafer is calculated based on the matching position between the grid-shaped ruled line and the grid-shaped vernier scale after the transparent or opaque wafer support member is moved, and the position shift amount is calculated. The accuracy of carrying the semiconductor wafer is detected by.

[0027]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a structural conceptual view showing an example of an embodiment of the structure of a multi-chamber apparatus according to the present invention, and FIG. 2 is a plan view showing an embodiment of the structure of a transparent dummy wafer in the multi-chamber apparatus of the present invention. FIG. 3 is a plan view showing an example of an embodiment of the structure of the transparent wafer supporting member in the multi-chamber apparatus of the present invention, FIG. 4 (a), (b),
FIG. 5C is a plan view showing an example of an embodiment of a semiconductor wafer transfer state in the multi-chamber apparatus of the present invention.
FIG. 6 is a plan view showing an example of an embodiment of the positional relationship between the transparent dummy wafer and the transparent wafer supporting member in the multi-chamber apparatus of the present invention, and FIG. 6 shows the positional relationship between the transparent dummy wafer and the transparent wafer supporting member in the multi-chamber apparatus of the present invention. FIG. 7 is a plan view showing an example of an embodiment, and FIG. 7 is an imaging waveform diagram showing an example of the embodiment of the wafer inspection method in the multi-chamber apparatus of the present invention.

The multi-chamber apparatus according to the present embodiment is provided with a multi-chamber for processing the semiconductor wafer 1 (hereinafter simply referred to as "wafer") in a consistent atmosphere, and its configuration will be described. , A basic wafer transfer chamber 2, a process chamber 3 connected to the wafer transfer chamber 2 for processing the wafer 1, and a grid-like ruled line 4c on the front surface 4a or the back surface 4b.
The transparent dummy wafer 4 provided with the transparent dummy wafer 4 is moved between the wafer transfer chamber 2 and the process chamber 3 while supporting the transparent dummy wafer 4, and the front surface 5a or the back surface 5b has a grid-like subscale that is slightly smaller than the grid-like. A transparent blade 5 which is a transparent wafer supporting member provided with 5c, a grid-like ruled line 4c of the transparent dummy wafer 4 after the transparent blade 5 is moved, and a grid-like sub-scale 5 of the transparent blade 5.
The wafer transfer accuracy detection means 7 detects the positional deviation amount 11 of the transparent dummy wafer 4 on the basis of a coincidence point 6 which coincides with c.

Further, the wafer transfer accuracy detecting means 7 includes a light source 8 for irradiating the transparent dummy wafer 4 and the transparent blade 5 with light before and after the movement of the transparent blade 5, and the transparent dummy wafer 4 and the transparent blade 5 projected by the light source 8. An image receiving unit 9 such as a camera that captures the image of the image, an output unit 10 such as a monitor with a ruled line 22 that displays the image captured by the image receiving unit 9, and a position of the transparent dummy wafer 4 with respect to the transparent blade 5 based on the coincidence point 6. Calculation unit 1 for calculating the deviation amount 11
2 and is provided in the wafer transfer chamber 2.

Here, the light source 8 and the optical system members such as the condenser lens 8a that collects the light emitted from the light source 8 and the image receiving portion 9 and the output portion 10 do not interfere with the transfer of the wafer 1 during the process processing. Although it is preferably provided outside the wafer transfer chamber 2, it may be provided inside thereof.

Further, the vernier scale 5c provided on the transparent blade 5 is a vernier when the grid-like ruled line 4c provided on the transparent dummy wafer 4 is used as the main scale, and the ruled line 4c and the vernier scale 5c are included. Have a vernier relationship.

The term vernier (secondary scale) generally means that when the length is measured using a scale, one graduation on the main scale is one.
It is used together to accurately read up to about / 10, 1/20. For example, if a vernier having a scale in which the length corresponding to the main scale N-1 scale is divided into N equal parts is used together,
It can read up to 1 / N.

That is, the ruled line 4c of the transparent dummy wafer 4 and the vernier scale 5 of the transparent blade 5 in the present embodiment.
c is in the relationship of the vernier, and the vernier is used to detect the positional deviation amount 11 of the transparent dummy wafer 4 on the transparent blade 5.

Further, the ruled line 4c of the transparent dummy wafer 4 and the vernier scale 5c of the transparent blade 5 should be formed, for example, by a groove having a V-shaped cross section in view of adverse effects such as contamination on the atmosphere. However, it is possible to have a function as a vernier even if it is formed by a method of attaching a mark or the like.

Further, the transparent dummy wafer 4 and the transparent blade 5 in the present embodiment are preferably made of, for example, quartz in consideration of adverse effects such as contamination in the atmosphere.

The detailed structure of the transparent dummy wafer 4 according to the present embodiment shown in FIG. 2 will be described below. The outer dimensions of the transparent dummy wafer 4 are the same as those of the Si wafer 1 (see FIG. 4) used for device trial production and the like (for example, FIG. 4). 5 inch wafer). Furthermore, the x-axis is taken in the direction parallel to the orientation flat (hereinafter referred to as the orientation flat) 4d,
The y-axis is taken in the direction perpendicular to the orientation flat 4d, and for example, the ruled line 1 is parallel to the x-axis with reference to the center position Pw (0,0).
5 is carved as a groove at an interval L, and a ruled line 16 is carved as a groove at an interval L parallel to the y-axis.

Therefore, on the transparent dummy wafer 4,
A plurality of intersections Pw (i, j), i, j = ± integer formed by the plurality of ruled lines 15 and the plurality of ruled lines 16 are formed.

The detailed structure of the transparent blade 5 according to the present embodiment shown in FIG. 3 will be described. The sample support 14 of the process chamber 3 shown in FIG. 4 and the wafer support blade 13 for transferring the wafer 1 move. The direction to do is the y axis. Then, the direction perpendicular to that is defined as the x-axis. Further, as shown in FIG. 3, with respect to the transparent blade 5, a point Pb (0,0) on the transparent blade 5 corresponding to the center position Pw (0,0) of the transparent dummy wafer 4 (see FIG. 2) is used as a reference. , The ruled lines 17 are formed in parallel with the x-axis at an interval L-ΔL, and y
Ruled lines 18 are formed in parallel with the axis at a distance L-ΔL. Therefore, on the transparent blade 5, a plurality of intersections Pb (i, j) of a plurality of ruled lines 17 and a plurality of ruled lines 18,
i, j = ± integer is formed.

The wafer transfer state of the wafer 1 in the multi-chamber apparatus shown in FIG. 4 will be described below.
4A shows a state before the wafer 1 placed on the wafer supporting blade 13 in the wafer transfer chamber 2 is transferred to the process chamber 3, and FIG. 4B shows the wafer 1 on the sample stage 14 in the process chamber 3. State after carrying the paper, FIG. 4 (c)
Removes the wafer 1 from the process chamber 3 and places the wafer 1 on the wafer support blade 13 in the wafer transfer chamber 2.
It is the state after returning.

In the multi-chamber apparatus, the process chamber 3 is connected to the wafer transfer chamber 2 that serves as the backbone at the center, and the wafer support blade 13 is installed in the wafer transfer chamber 2. There is.

Further, the wafer 1 is a wafer supporting blade 1
With the back surface of the wafer being supported by 3, the wafer 3 is transferred into the process chamber 3 and placed on a sample table 14 installed in the process chamber 3.

After the process processing is performed in the process chamber 3, the wafer supporting blade 13 is inserted into the process chamber 3, the wafer 1 is transferred from the sample stage 14 to the wafer supporting blade 13, and the wafer transfer chamber 2
Can be put back in.

Next, a wafer inspection method for a multi-chamber apparatus according to this embodiment will be described with reference to FIGS.

Here, the description will be made by replacing the wafer 1 with the transparent dummy wafer 4 and the wafer supporting blade 13 with the transparent blade 5 in the series of operations for carrying the wafer shown in FIG.

First, in the wafer transfer chamber 2,
A transparent dummy wafer 4 having grid-shaped ruled lines 4c including ruled lines 15 and 16 provided on the front surface 4a or the back surface 4b.
Is supported by a transparent blade 5 having a grid-like vernier scale 5c slightly smaller than the grid-like shape provided on the front surface 5a or the back surface 5b.

The state of conveyance of the transparent dummy wafer 4 at this time is the same as that shown in FIG. 4A, and the positional relationship between the transparent dummy wafer 4 and the transparent blade 5 in this state is as follows.
This is shown in FIG.

Here, the wafer transfer accuracy detecting means 7 detects the positional deviation amount 11 (see FIG. 6) of the transparent dummy wafer 4 with respect to the transparent blade 5.

The relative position between the transparent dummy wafer 4 and the transparent blade 5 can be confirmed, for example, from the symmetry of the imaging waveform 19 shown in FIG.

That is, the ruled line 17 on AA 'shown in FIG.
From the symmetry of the imaging waveform 19 (see FIG. 7) of Pb (0,
It can be seen that the two overlap at the position of (c) = Pw (0, c), (c is arbitrary) (here, on BB ′). Further, from the symmetry of the imaging waveform 19 (see FIG. 7) of the ruled line 18 on BB ′, at the position of Pb (d, 0) = Pw (d, 0), (d is arbitrary) (here, on AA ′). It can be seen that the two overlap.

Therefore, it can be confirmed that the transparent dummy wafer 4 and the transparent blade 5 are placed without displacement, and the x-axis of the transparent dummy wafer 4 and the x-axis of the transparent blade 5 are parallel to each other.

Here, the position shift amount 1 due to the imaging waveform 19
The detection of 1 is performed by the calculation unit 12.

This is because, for example, in the image of the transparent dummy wafer 4 and the transparent blade 5 taken in the image receiving section 9 (see FIG. 5), for example, a desired ruled line 17 is scanned, and the image pickup waveform 19 at this time (see FIG. 7). Then, △ 1 = △ 4, △ 2 =
This is because, when Δ3 (Δ1> Δ2) is reached, a matching point 6 that is a matching point with the ruled line 18 near the middle of the ruled lines 18 where Δ2 and Δ3 are detected is detected.

Then, the transparent blade 5 supporting the transparent dummy wafer 4 is moved between the wafer transfer chamber 2 and the process chamber 3.

That is, the transparent dummy wafer 4 is transferred from the wafer transfer chamber 2 to the process chamber 3 by the transparent blade 5, and the transparent dummy wafer 4 is placed on the sample table 14.

Further, the transparent blade 5 again receives the transparent dummy wafer 4 from the sample stage 14, places the transparent dummy wafer 4 on the transparent blade 5, and transfers it from the process chamber 3 to the wafer transfer chamber 2.

Here, again, the wafer transfer accuracy detection means 7
The positional deviation amount 11 of the transparent dummy wafer 4 with respect to the transparent blade 5 is detected.

The position shift amount 11 is detected by the arithmetic unit 12 using the image pickup waveform 19 as described above.

That is, after the transparent blade 5 supporting the transparent dummy wafer 4 is moved, the transparent dummy wafer 4 is moved.
The positional deviation amount 11 of the transparent dummy wafer 4 is calculated by the wafer transfer accuracy detection means 7 based on the coincidence point 6 between the ruled line 4c and the vernier scale 5c of the transparent blade 5.

The state of conveyance of the transparent dummy wafer 4 at this time is the same as that shown in FIG. 4C, and the positional relationship between the transparent dummy wafer 4 and the transparent blade 5 in this state is as follows.
This is shown in FIG.

First, in FIG. 6, the ruled line 20 on CC '
By utilizing the symmetry of the image pickup waveform 19 of FIG. 7 (see FIG. 7), Pb (−1, m) = Pw (−1, m) (m is arbitrary) at the position (here on the ruled line 21) You can see that they overlap. Similarly, the ruled line 21 on DD '
From the symmetry of the imaging waveform 19 (see FIG. 7) of Pb (n,
It can be seen that the two overlap at the position (-1) = P (n, -1) (n is arbitrary) (here, on the ruled line 20).

Summarizing the above results, the transparent dummy wafer 4 and the transparent blade 5 have Pb (-1, -1) = Pw (-
It means that they are overlapped at the point of (1, -1).

Here, assuming that the coordinates of the lattice points of the overlapping intersections, that is, the coincidence points 6 are (s, t), the positional deviation amount 11 of the relative position can be expressed by the following equation.

That is, Δx = | s | × ΔL Δy = | t | × ΔL For example, in FIG. 6, since | s | = | t | = 1, Δx = ΔLΔy = ΔL.

As a result, it is possible to detect the transfer accuracy of the transparent dummy wafer 4 from the positional deviation amount 11.

As a result, it is possible to detect the relative positional deviation accuracy at the time of carrying the process processing of the wafer 1 based on the carrying accuracy of the transparent dummy wafer 4 and the transparent blade 5.

In the present embodiment, as the vernier dimension, the interval between the ruled lines 4c on the transparent dummy wafer 4 is made longer than the interval between the vernier scales 5c on the transparent blade 5.
It goes without saying that the same inspection can be performed even if this relationship is reversed.

According to the multi-chamber apparatus and the wafer inspection method thereof of this embodiment, the following operational effects can be obtained.

That is, the transparent dummy wafer 4 having the grid-shaped ruled lines 4c provided on the front surface 4a or the back surface 4b and the transparent dummy wafer 5 having a grid-shaped sub-scale 5c slightly smaller than the grid-shaped are provided on the front surface 5a or the back surface 5b. After the transparent blade 5 is moved by being supported by the blade 5, the wafer transfer accuracy detecting means 7 can calculate the positional deviation amount 11 of the transparent dummy wafer 4 with respect to the transparent blade 5.

As a result, the transfer accuracy of the transparent dummy wafer 4 can be detected by the positional deviation amount 11.

Thus, the relative positional deviation between the wafer 1 and the wafer supporting member in the wafer transfer of the multi-chamber apparatus can be quantitatively inspected in a short time, and the transfer accuracy of the wafer 1 during the wafer transfer can be detected. be able to.

Further, since the transfer accuracy of the wafer 1 can be detected, the transfer accuracy of the wafer 1 can be improved.

Since the transfer accuracy of the wafer 1 can be improved, the reliability of process processing in the multi-chamber apparatus can be improved.

Further, since the inspection can be carried out in a consistent atmosphere, the operating time of the multi-chamber apparatus can be improved without exposing the inside of the multi-chamber apparatus to the atmosphere.

Here, since the grid-like ruled lines 4c provided on the transparent dummy wafer 4 or the grid-like sub-scale 5c provided on the transparent blade 5 are formed by the grooves, no marks or the like are attached. Therefore, it is possible to prevent adverse effects such as pollution in the atmosphere.

Further, since the transparent dummy wafer 4 or the transparent blade 5 is made of quartz, it is possible to prevent adverse effects such as pollution in the atmosphere, as described above.

Although the invention made by the inventor has been specifically described based on the embodiments of the present invention, the present invention is not limited to the embodiments of the invention, and does not depart from the gist of the invention. It is needless to say that various changes can be made.

For example, in the above-mentioned embodiment, both the dummy wafer and the wafer supporting member are formed of transparent members such as quartz, but it is not always necessary that both are transparent. If is transparent, it is possible to obtain the same effect as in the above embodiment.

That is, the dummy wafer is a transparent dummy wafer as in the above embodiment, grid-like ruled lines are provided on the surface thereof, the wafer supporting member is an opaque wafer supporting member, and the wafer supporting surface is formed by the grid-like pattern. A multi-chamber apparatus is provided in which a slightly smaller grid-like vernier scale is provided, and further, wafer transfer accuracy detection means is provided in the wafer transfer chamber which is the backbone.

At this time, the opaque wafer support member is made of, for example, aluminum.

In this case, the wafer transfer accuracy detection means includes an image pickup section such as a camera, an image receiving section for taking in images of the transparent dummy wafer and the opaque wafer supporting member photographed by the image pickup section, and the image receiving section. It has an output unit for displaying the captured image, and a calculation unit for calculating the amount of displacement of the transparent dummy wafer with respect to the opaque wafer support member.

As a result, the transparent dummy wafer and the opaque wafer supporting member are imaged from above the transparent dummy wafer by the imaging unit, and the reflected image is captured by the image receiving unit, and the same wafer inspection method as in the above-described embodiment is performed. By utilizing this, it is possible to detect the positional deviation amount of the transparent dummy wafer.

That is, the transparent dummy wafer is determined based on the matching positions between the grid-like ruled lines of the transparent dummy wafer and the grid-like vernier scale of the opaque wafer supporting member after the movement of the opaque wafer supporting member supporting the transparent dummy wafer. It is possible to detect the transport accuracy of
It is possible to detect the wafer transfer accuracy when the wafer is transferred.

Alternatively, the dummy wafer may be a silicon dummy wafer made of silicon, and a transparent wafer support member made of quartz or the like (the same as the transparent blade of the above embodiment) may be used as the wafer support member. ,
The same effects as in the above embodiment can be obtained.

That is, grid-like ruled lines are provided on the back surface of the silicon dummy wafer, and a grid-like vernier scale slightly smaller than the grid-like is provided on the wafer-supporting surface of the transparent blade. The transfer chamber is a multi-chamber device provided with wafer transfer accuracy detection means.

In this case, the wafer transfer accuracy detection means includes an image pickup section such as a camera, an image receiving section for taking in images of the silicon dummy wafer and the transparent wafer supporting member photographed by the image pickup section, and the image receiving section. It has an output unit for displaying the captured image and a calculation unit for calculating the amount of positional deviation of the silicon dummy wafer.

As a result, the image capturing section captures an image of the silicon dummy wafer and the transparent wafer supporting member from the back side of the transparent wafer supporting member, and the reflected image thereof is captured by the image receiving section. By using the inspection method, the displacement amount of the silicon dummy wafer can be detected.

That is, based on the coincidence position between the grid-like ruled lines of the silicon dummy wafer and the grid-like sub-scale of the transparent wafer support member after the movement of the transparent wafer support member supporting the silicon dummy wafer. It is possible to detect the transfer accuracy of the silicon dummy wafer, and as a result, it is possible to detect the wafer transfer accuracy when the wafer is transferred.

Furthermore, in this case, by using a silicon dummy wafer made of silicon as the dummy wafer, the price of the dummy wafer can be reduced as compared with the case where the dummy wafer is made of quartz.

Further, the grid-like vernier scale provided on the transparent wafer support member or the opaque wafer support member may be provided at least at the wafer support location, and is provided throughout. You don't have to.

[0091]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). A transparent or opaque wafer supporting member having a grid-shaped ruled line on the front surface or the back surface is supported by a transparent or opaque wafer supporting member having a grid-like vernier scale slightly smaller than the grid shape on the front surface or the back surface. After the transparent or opaque wafer supporting member is moved, the relative positional deviation between the transparent dummy wafer or silicon dummy wafer and the wafer supporting member is quantified by calculating the positional deviation amount of the transparent dummy wafer or silicon dummy wafer by the wafer transfer accuracy detecting means. Since the inspection can be performed in a short period of time, and as a result, the semiconductor wafer transfer accuracy can be detected, the semiconductor wafer transfer accuracy in the multi-chamber apparatus can be improved.

(2). Since it is possible to improve the transfer accuracy of the semiconductor wafer, it is possible to improve the reliability of process processing in the multi-chamber apparatus.

(3). Since the inspection can be performed in a consistent atmosphere, the operating time of the multi-chamber apparatus can be improved without exposing the inside of the multi-chamber apparatus to the atmosphere.

(4). Since the grid-like ruled lines or the grid-like vernier scale are formed by the grooves, it is not necessary to attach a mark or the like, so that it is possible to prevent adverse effects such as pollution in the atmosphere.

(5). Since the transparent dummy wafer or the transparent wafer supporting member is made of quartz,
It is possible to prevent adverse effects such as pollution in the atmosphere.

(6). By using a silicon dummy wafer made of silicon as the dummy wafer, it is possible to reduce the price as compared with the case where the dummy wafer is made of quartz.

[Brief description of the drawings]

FIG. 1 is a structural conceptual diagram showing an example of an embodiment of a structure of a multi-chamber device according to the present invention.

FIG. 2 is a plan view showing an example of an embodiment of a structure of a transparent dummy wafer in the multi-chamber apparatus of the present invention.

FIG. 3 is a plan view showing an example of an embodiment of the structure of a transparent wafer supporting member in the multi-chamber apparatus of the present invention.

4 (a), (b) and (c) are plan views showing an example of an embodiment of a semiconductor wafer transfer state in the multi-chamber apparatus of the present invention.

FIG. 5 is a plan view showing an example of an embodiment of a positional relationship between a transparent dummy wafer and a transparent wafer supporting member in the multi-chamber apparatus of the present invention.

FIG. 6 is a plan view showing an example of an embodiment of a positional relationship between a transparent dummy wafer and a transparent wafer supporting member in the multi-chamber apparatus of the present invention.

FIG. 7 is an imaging waveform diagram showing an example of an embodiment of a wafer inspection method in the multi-chamber apparatus of the present invention.

[Explanation of symbols]

 1 wafer 2 wafer transfer chamber 3 process chamber 4 transparent dummy wafer 4a front surface 4b back surface 4c ruled line 4d orientation flat 5 transparent blade (transparent wafer support member) 5a front surface 5b backside scale 5c vernier scale 6 match point (match point) 7 wafer transfer accuracy detection Means 8 Light source 8a Condensing lens 9 Image receiving unit 10 Output unit 11 Positional deviation amount 12 Calculation unit 13 Wafer supporting blade 14 Sample stage 15 Ruled line 16 Ruled line 17 Ruled line 18 Ruled line 19 Imaging waveform 20 Ruled line 21 Ruled line 22 Ruled line

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hidefumi Ito 2326 Imai, Ome-shi, Tokyo Hitachi, Ltd. Device Development Center

Claims (7)

[Claims] 1. A multi-chamber apparatus in which multiple chambers for processing semiconductor wafers are installed in a consistent atmosphere, the wafer transport chamber serving as a backbone, and being connected to the wafer transport chamber, A process chamber in which semiconductor wafers are processed, a transparent dummy wafer having grid-shaped ruled lines on the front surface or the back surface, and a transparent dummy wafer that supports the transparent dummy wafer and moves between the wafer transfer chamber and the process chamber. Alternatively, a transparent wafer supporting member provided with a lattice-shaped vernier scale slightly smaller than the lattice on the back surface, and a grid-like ruled line of the transparent dummy wafer and the transparent wafer supporting member after the transparent wafer supporting member is moved. Detecting the position shift amount of the transparent dummy wafer based on the matching position with the grid-like vernier scale And a E c conveyance accuracy detection means, a multi-chamber apparatus, wherein the wafer transfer accuracy detection means is provided in the wafer transfer chamber. 2. The multi-chamber apparatus according to claim 1, wherein the wafer transfer accuracy detection means irradiates the transparent dummy wafer and the transparent wafer support member with light before and after the movement of the transparent wafer support member. An image receiving unit that captures images of the transparent dummy wafer and the transparent wafer supporting member projected by the light source, an output unit that displays the image captured by the image receiving unit, and the transparent dummy wafer based on the matching position. A multi-chamber apparatus comprising: a calculation unit that calculates a positional deviation amount. 3. A multi-chamber apparatus provided with multiple chambers for processing semiconductor wafers in a consistent atmosphere, the wafer transport chamber serving as a backbone, and being connected to the wafer transport chamber, A process chamber in which semiconductor wafers are processed, a transparent dummy wafer having grid-shaped ruled lines on the front surface or the back surface, a transparent dummy wafer that supports the transparent dummy wafer, and moves between the wafer transfer chamber and the process chamber. An opaque wafer support member having a support surface provided with a grid-like vernier scale slightly smaller than the grid-like, and a grid-like ruled line of the transparent dummy wafer after the movement of the opaque wafer support member and the opaque wafer support member. Detecting the position shift amount of the transparent dummy wafer based on the matching position with the grid-like vernier scale And a wafer transfer accuracy detection means, a multi-chamber apparatus, wherein the wafer transfer accuracy detection means is provided in the wafer transfer chamber. 4. A multi-chamber apparatus provided with multiple chambers for processing semiconductor wafers in a consistent atmosphere, comprising a wafer transfer chamber as a backbone, and a wafer transfer chamber connected to the wafer transfer chamber. A process chamber in which a semiconductor wafer is processed, a silicon dummy wafer having a lattice-shaped ruled line on its back surface, and a silicon dummy wafer that supports the silicon dummy wafer and moves between the wafer transfer chamber and the process chamber. A transparent wafer supporting member in which a supporting surface is provided with a grid-like vernier scale slightly smaller than the grid, a grid-like ruled line of the silicon dummy wafer after the moving of the transparent wafer supporting member, and the transparent wafer supporting member. The amount of positional deviation of the silicon dummy wafer based on the matching position with the grid-like vernier scale And a E c conveyance accuracy detection means, a multi-chamber apparatus, wherein the wafer transfer accuracy detection means is provided in the wafer transfer chamber. 5. The multi-chamber apparatus according to claim 1, 2, 3 or 4, wherein the grid-like ruled lines or the grid-like sub-scales are formed by grooves. Chamber device. 6. The multi-chamber apparatus according to claim 1, 2, 3, 4, or 5, wherein the transparent dummy wafer or the transparent wafer supporting member is made of quartz. . 7. A wafer inspection method for a multi-chamber apparatus that performs a process treatment of a semiconductor wafer in a consistent atmosphere, wherein a transparent dummy wafer or a silicon dummy wafer having grid-shaped ruled lines on the front surface or the back surface Alternatively, it is supported by a transparent or opaque wafer supporting member on the back surface of which a grid-like subscale is slightly smaller than the grid-like, and is provided between the basic wafer transfer chamber and the process chamber connected to the wafer transfer chamber. The transparent or opaque wafer support member is moved by, and the transparent dummy wafer or the silicon dummy wafer based on the matching position between the grid-like ruled line and the grid-like sub-scale after the movement of the transparent or opaque wafer support member. The amount of positional deviation of the semiconductor is calculated. Wafer inspection method of a multi-chamber device characterized by detecting the feeding accuracy of the E c.