JPH09120980A - Formation of solder ball electrode - Google Patents
Formation of solder ball electrodeInfo
- Publication number
- JPH09120980A JPH09120980A JP27854295A JP27854295A JPH09120980A JP H09120980 A JPH09120980 A JP H09120980A JP 27854295 A JP27854295 A JP 27854295A JP 27854295 A JP27854295 A JP 27854295A JP H09120980 A JPH09120980 A JP H09120980A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- pellet
- shaped
- solder ball
- ball electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3478—Applying solder preforms; Transferring prefabricated solder patterns
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＢＧＡ（Ｂａｌｌ
Ｇｒｉｄ Ａｒｒａｙ）パッケージの半田ボール電極
の形成方法に関するものである。TECHNICAL FIELD The present invention relates to a BGA (Ball).
The present invention relates to a method for forming a solder ball electrode of a grid array package.
【０００２】[0002]
【従来の技術】図４にＢＧＡパッケージのＩＣの一例を
示す。（ａ）は表面側の構造を示す斜視図、（ｂ）は裏
面側の構造を示す斜視図、（ｃ）は断面図である。図
で、１はパッケージ、２はパッケージ１の裏面側のラン
ド３上に形成された球状の半田ボール電極、４はＢＧＡ
パッケージ１の表面側の中央に形成された凹部１ａに実
装されたＩＣチップ、５はＢＧＡパッケージ１のＩＣを
実装する母基板、６は母基板５上に形成された、半田ボ
ール電極２とそれぞれ接合される配線パターンである。
凹部１ａは蓋等により密閉されるが図では蓋を省略して
いる。また、（ａ）では、凹部１ａの内部構造の図示を
省略している。2. Description of the Related Art FIG. 4 shows an example of a BGA package IC. (A) is a perspective view showing the structure on the front surface side, (b) is a perspective view showing the structure on the back surface side, and (c) is a sectional view. In the figure, 1 is a package, 2 is a spherical solder ball electrode formed on a land 3 on the back side of the package 1, and 4 is a BGA.
An IC chip mounted in the recess 1a formed in the center of the front surface side of the package 1, 5 is a mother board on which the IC of the BGA package 1 is mounted, 6 is a solder ball electrode 2 formed on the mother board 5, and It is a wiring pattern to be joined.
The recess 1a is sealed with a lid or the like, but the lid is omitted in the figure. Further, in (a), the illustration of the internal structure of the recess 1a is omitted.
【０００３】図５の工程図に基づいて従来のＢＧＡパッ
ケージの半田ボール電極２の形成方法の一例について説
明する。但し、図４に示した構成と同等構成については
同符号を付している。まず、（ａ）に示すように、半田
メーカーより買い入れた半田ボール７（例えば、融点が
約183 ℃で、組成がPb/Sn=37/63 の共晶半田で構成され
た、サイズφ0.76mm±0.02mmの球状の半田ボール）を、
ＢＧＡパッケージ１の裏面側に形成されたランド３のピ
ッチ（例えば、日本電子機械工業会EIAJで規格化されて
いるピッチ：1.0mm ，1.27mm，1.5mm ）で格子状に吸着
孔８ａを形成した吸着ヘッド８を用いて、半田ボール７
を貯めたホッパー９から半田ボール７を所定個数吸着
し、（ｂ）及び（ｃ）に示すように、ＢＧＡパッケージ
１の裏面側に形成されたランド６上に半田ボール７を移
送した後、リフロー炉により半田を溶融させて、（ｄ）
に示すように、半田ボール電極２を形成していた。An example of a conventional method for forming the solder ball electrode 2 of the BGA package will be described with reference to the process chart of FIG. However, the same components as those shown in FIG. 4 are designated by the same reference numerals. First, as shown in (a), solder balls 7 purchased from a solder manufacturer (for example, a Φ0.76 mm size composed of eutectic solder with a melting point of about 183 ° C and a composition of Pb / Sn = 37/63). ± 0.02mm spherical solder ball),
The suction holes 8a are formed in a grid pattern at the pitch of the lands 3 formed on the back surface side of the BGA package 1 (for example, the pitch standardized by the Japan Electronic Machinery Manufacturers Association EIAJ: 1.0 mm, 1.27 mm, 1.5 mm). Using the suction head 8, solder balls 7
A predetermined number of solder balls 7 are adsorbed from the hopper 9 in which the solder balls 7 are stored, and the solder balls 7 are transferred onto the land 6 formed on the back surface side of the BGA package 1 as shown in (b) and (c), and then reflowed. Melt the solder in a furnace, (d)
The solder ball electrode 2 was formed as shown in FIG.
【０００４】[0004]
【発明が解決しようとする課題】図５に示した半田ボー
ル電極の形成方法では、半田メーカーから購入する半田
ボール７が高価であるためコストが高くなるという問題
点があった。また、半田ボール７が略球状であるため転
がりやすく、ランド６上に半田ボール７を配置したＢＧ
Ａパッケージ１をリフロー炉に搬送する時、または、リ
フロー炉内での溶融時に、半田ボール７がランド６上か
ら移動してしまうという問題点があった。半田メーカー
から購入する半田ボール７が高価であるのは半田ボール
７の製造工程が煩雑であるためである。The method of forming the solder ball electrodes shown in FIG. 5 has a problem that the cost is high because the solder balls 7 purchased from the solder manufacturer are expensive. In addition, since the solder balls 7 are substantially spherical, they easily roll, and the BG in which the solder balls 7 are arranged on the land 6
There is a problem that the solder ball 7 moves from the land 6 when the A package 1 is transported to the reflow furnace or when the A package 1 is melted in the reflow furnace. The solder balls 7 purchased from a solder maker are expensive because the manufacturing process of the solder balls 7 is complicated.
【０００５】図６の工程図に基づいて半田ボールの製造
方法の一例について説明する。まず、（ａ）に示すよう
に、半田の原材料１０を細線化するために、押し出し成
形を数回行い、所望の体積（例えば、φ0.76mmの球の体
積）に相当する長さに定寸切断して所望の体積を有する
ペレット状半田１１を形成する。次に、（ｂ）に示すよ
うに、ペレット状半田１１を液中溶融（オイルバス溶
融）させるため、半田の融点以上に加熱可能なオイル１
２中に投入し、ゆっくりと攪拌した後、冷却して固体に
戻し半田ボール７を形成する。その後、オイル１２中か
ら半田ボール７を取り出して洗浄を行い、（ｃ）に示す
ように、規格内の大きさの半田ボール７を得るために、
ふるい１３で選別を行う。例えば、0.78mm，0.74mmピッ
チのメッシュ１４を備えたふるい１３で0.76±0.02mmの
半田ボール７を選別する。An example of a solder ball manufacturing method will be described with reference to the process chart of FIG. First, as shown in (a), in order to make the solder raw material 10 into a fine wire, extrusion molding is performed several times, and the length is adjusted to a length corresponding to a desired volume (for example, a sphere volume of φ0.76 mm). The pellet-shaped solder 11 having a desired volume is formed by cutting. Next, as shown in (b), in order to melt the pellet-shaped solder 11 in the liquid (oil bath melting), the oil 1 that can be heated to the melting point of the solder or higher is used.
Then, after being slowly stirred, the mixture is cooled to be solid and the solder balls 7 are formed. Then, the solder balls 7 are taken out of the oil 12 and washed to obtain solder balls 7 having a size within the standard, as shown in (c).
Screen with sieve 13. For example, the solder balls 7 of 0.76 ± 0.02 mm are selected by the sieve 13 having the mesh 14 of 0.78 mm and 0.74 mm pitch.
【０００６】しかし、図６に示す製造方法では、溶融ば
らつきにより、歪んだ半田ボール７が形成されたり、２
個以上つながった半田ボール７が形成されたりする。こ
のような半田ボール７では、図５（ａ）に示した、吸着
ヘッド８で半田ボール７を吸着する場合に、吸着不良等
が発生するという問題もあった。このようなバッチ処理
を含む複雑な工程によって製造されるため、半田ボール
７のコストは高価とならざるをえない。However, in the manufacturing method shown in FIG. 6, warped solder balls 7 are formed due to variations in melting, and
Solder balls 7 connected to each other may be formed. Such a solder ball 7 also has a problem that a suction failure or the like occurs when the solder ball 7 is sucked by the suction head 8 shown in FIG. 5A. Since the solder ball 7 is manufactured by a complicated process including such a batch process, the cost of the solder ball 7 is inevitably high.
【０００７】また、半田ボール７が転がりやすいという
問題点に対して、リフロー炉がホットエアーリフローの
場合は、半田ボール７またはＢＧＡパッケージ１のラン
ド６の表面に加熱時に酸化膜が半田溶融に先立ち急激に
形成され半田溶融を阻害するので、フラックスを供給し
てその活性作用を用いて半田溶融させるため、フラック
スをランド６上にフラックスを供給した後、半田ボール
７をランド６上に移送するようにして、フラックスの粘
着力によりランド６上に半田ボール７を仮固定（転がり
止め）して半田ボール７が転がるのを防止することがで
きるが、例えば、フラックスを用いないN2リフロー炉を
使用する場合等（例えば、酸素が100ppm程度の雰囲気で
半田溶融させれば、良好な溶融状態を得ることができ、
溶融後のフラックス洗浄をなくすることが可能）は、半
田ボール７が転がらないよう、例えば、半田ボール径に
対して0.1mm 〜0.2mm 程度の余裕（クリアランス）を有
する穴を複数形成した板状の治具をＢＧＡパッケージ１
の裏面側に重ねて半田ボール７をそれぞれの穴に入れて
半田ボール７が転がるのを防止する必要があった。In contrast to the problem that the solder balls 7 tend to roll, when the reflow furnace uses hot air reflow, the oxide film is heated on the surface of the solder balls 7 or the lands 6 of the BGA package 1 prior to melting the solder. Since it is formed abruptly and inhibits the melting of the solder, the flux is supplied and the solder is melted by using its activating action. Therefore, after the flux is supplied onto the land 6, the solder ball 7 is transferred onto the land 6. Then, it is possible to prevent the solder balls 7 from rolling by temporarily fixing (rolling-preventing) the solder balls 7 on the lands 6 by the adhesive force of the flux, but for example, an N 2 reflow furnace that does not use flux is used. (For example, if the solder is melted in an atmosphere of oxygen of about 100 ppm, a good molten state can be obtained,
It is possible to eliminate the flux cleaning after melting), so that the solder balls 7 do not roll, for example, a plate shape with multiple holes with a clearance of about 0.1 mm to 0.2 mm with respect to the solder ball diameter. Jig of BGA package 1
It was necessary to prevent the solder balls 7 from rolling by putting the solder balls 7 into the respective holes so as to overlap with the back surface side of the above.
【０００８】本発明は、上記問題点に鑑みなされたもの
で、その目的とするところは、安価にかつ容易に製造す
ることができ、半田ボールの実装不良の低減が図れる半
田ボール電極の形成方法を提供することにある。The present invention has been made in view of the above problems, and an object thereof is a method of forming a solder ball electrode which can be manufactured inexpensively and easily and which can reduce mounting defects of solder balls. To provide.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するた
め、請求項１記載の半田ボール電極の形成方法は、ＢＧ
Ａパッケージの裏面側に形成したランド上に半田ボール
電極を形成する、半田ボール電極の形成方法において、
長尺状の薄板状半田から所定体積のペレット状半田を打
ち抜き、そのペレット状半田を前記ランド上に移送し、
リフローで溶融させて前記半田ボール電極を形成するこ
とを特徴とするものである。In order to achieve the above object, the method for forming a solder ball electrode according to claim 1 is BG
A method of forming a solder ball electrode, comprising forming a solder ball electrode on a land formed on the back surface side of an A package,
Punching a predetermined volume of pellet-shaped solder from a long thin plate-shaped solder, transferring the pellet-shaped solder onto the land,
It is characterized in that the solder ball electrode is formed by melting by reflow.
【００１０】請求項２記載の半田ボール電極の形成方法
は、請求項１記載の半田ボール電極の形成方法で、長尺
状の前記薄板状半田に、フラックスを塗布する工程を備
えたことを特徴とするものである。A method of forming a solder ball electrode according to a second aspect is the method of forming a solder ball electrode according to the first aspect, further comprising a step of applying flux to the long thin plate-shaped solder. It is what
【００１１】請求項３記載の半田ボール電極の形成方法
は、請求項１記載の半田ボール電極の形成方法で、フラ
ックスを板状半田の間に挟んで前記薄板状半田を形成す
る工程を備えたことを特徴とするものである。A method of forming a solder ball electrode according to a third aspect is the method of forming a solder ball electrode according to the first aspect, which comprises a step of sandwiching a flux between plate-like solders to form the thin plate-like solders. It is characterized by that.
【００１２】請求項４記載の半田ボール電極の形成方法
は、請求項１記載の半田ボール電極の形成方法で、前記
ランド上に移送した前記ペレット状半田に、機械的圧力
または熱を印加して、前記ペレット状半田を前記ランド
上に仮止めする工程を備えたことを特徴とするものであ
る。A method of forming a solder ball electrode according to a fourth aspect is the method of forming a solder ball electrode according to the first aspect, wherein mechanical pressure or heat is applied to the pellet-shaped solder transferred onto the land. The method further comprises the step of temporarily fixing the pellet-shaped solder on the land.
【００１３】[0013]
【発明の実施の形態】図１の工程図に基づいて本発明の
半田ボール電極の形成方法の一実施形態について説明す
る。但し、図４に示した構成と同等構成については同符
号を付すこととする。半田メーカーが供給する半田ボー
ルよりも、製造及び取扱が容易な長尺状の薄板状半田
（半田リボン１５）を用い、（ａ）に示すように、半田
リボン１５からＢＧＡパッケージ１の電極配列（ランド
の配列）に対応した打ち抜き金型（金型ヘッド１７）に
より半田を打ち抜きペレット状半田１８を形成した後、
（ｂ）に示すように、ペレット状半田１８をＢＧＡパッ
ケージ１のランド（図示省略）上に移送する。金型ヘッ
ド１７が吸着ヘッドを兼ねるようにしてもよい。最後
に、（ｃ）に示すように、リフローにより半田溶融させ
る。これにより、所望の半田ボール電極２を形成するこ
とができる。BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the solder ball electrode forming method of the present invention will be described with reference to the process chart of FIG. However, the same components as those shown in FIG. 4 are designated by the same reference numerals. A long thin plate-shaped solder (solder ribbon 15) that is easier to manufacture and handle than a solder ball supplied by a solder maker is used, and as shown in (a), the electrode array of the BGA package 1 from the solder ribbon 15 ( After the solder is punched out by a punching die (die head 17) corresponding to the land arrangement) to form pellet-shaped solder 18,
As shown in (b), the pellet-shaped solder 18 is transferred onto the land (not shown) of the BGA package 1. The mold head 17 may also serve as the suction head. Finally, as shown in (c), the solder is melted by reflow. Thereby, the desired solder ball electrode 2 can be formed.
【００１４】次に、図２に基づいて金型ヘッド１７の抜
きパターンの一実施形態について説明する。図２は、半
田リボン１５から打ち抜くペレット状半田の位置を示す
平面図である。図に示すように、φ0.76mmの半田ボール
を形成するためには、半田リボン１５の板厚t を仮に0.
4mm に設定した場合、φ0.8552mmのペレット状半田１８
ａ〜１８ｄを、1.27mmのピッチで打ち抜く必要がある。
もし材料取り効率が悪い場合は、金型ヘッド１７を半ピ
ッチ、Ｘ方向及びＹ方向にずらして、再度、ペレット状
半田１８ｅ〜１８ｈを打ち抜くことも可能である。Next, an embodiment of the punching pattern of the mold head 17 will be described with reference to FIG. FIG. 2 is a plan view showing the position of the pellet-shaped solder punched out from the solder ribbon 15. As shown in the figure, in order to form a solder ball of φ0.76 mm, the thickness t of the solder ribbon 15 is temporarily set to 0.
When set to 4 mm, pellet-shaped solder of φ0.8552 mm 18
It is necessary to punch out a to 18d at a pitch of 1.27 mm.
If the material removal efficiency is poor, it is also possible to shift the mold head 17 in the half pitch in the X and Y directions and punch out the pellet-shaped solders 18e to 18h again.
【００１５】また、フラックスを用いて半田ボール電極
を形成する場合は、図１（ａ）に示した、ペレット状半
田１８を打ち抜く工程の前に、長尺状の薄板状半田（半
田リボン１５）に、予めフラックスを塗布するようにし
てもよい。従来の半田ボール電極の形成方法では、個々
の球状の半田ボール７に均一にフラックスを予め塗布し
ておく方法もあるが、半田リボン１５を図１（ａ）に示
すように送る際にその裏面にハケ塗り、ロール塗り等の
方法によってフラックスを供給するように構成すれば、
半田リボン１５は単一な略平面であるため、均一にかつ
容易にフラックスを供給することができる。When the solder ball electrodes are formed by using the flux, the long thin plate-like solder (solder ribbon 15) is formed before the step of punching out the pellet-like solder 18 shown in FIG. 1 (a). Alternatively, the flux may be applied in advance. In the conventional method of forming the solder ball electrodes, there is also a method of uniformly applying flux to the individual spherical solder balls 7 in advance, but when the solder ribbon 15 is fed as shown in FIG. If it is configured to supply flux by brush coating, roll coating, etc.,
Since the solder ribbon 15 is a single substantially flat surface, the flux can be uniformly and easily supplied.
【００１６】また、フラックスを予めペレット状半田１
８に供給するためには、半田リボン１５を、フラックス
を板状半田で挟んだ構造のクラッド材としておく方法も
ある。図３の工程図に基づいてその製造方法の一実施形
態について説明する。図は、半田リボン１５の断面構造
を示した図である。まず、（ａ）に示すように、ペレッ
ト状半田１８の所望の体積を得るのに必要な、半田リボ
ン１５の厚さの約半分の厚さの板状半田１９ａ，１９ｂ
を形成し、一方の板状半田１９ａの一方の表面に溝をロ
ーラ等で形成した後、その溝の内部にフラックス２０を
供給する。その後、（ｂ）に示すように、板状半田１９
ａの溝を形成した面に板状半田１９ｂを圧接して張り合
わせ、１枚のクラッド状の半田リボン１５を形成する。
この場合、フラックス２０を充填する溝を形成する位置
は、半田リボン１５のペレット状半田１８を打ち抜く位
置とする。Further, the flux is preliminarily applied to the pellet solder 1
In order to supply the solder to the No. 8 solder, there is also a method of using the solder ribbon 15 as a clad material having a structure in which flux is sandwiched by plate-shaped solder. One embodiment of the manufacturing method will be described based on the process chart of FIG. The figure shows the cross-sectional structure of the solder ribbon 15. First, as shown in (a), plate-shaped solders 19a and 19b having a thickness of about half the thickness of the solder ribbon 15 necessary to obtain a desired volume of the pellet-shaped solder 18 are obtained.
And forming a groove on one surface of one plate-shaped solder 19a with a roller or the like, and then supplying the flux 20 to the inside of the groove. Then, as shown in FIG.
The plate-shaped solder 19b is pressed against and bonded to the surface of the groove a in which the clad-shaped solder ribbon 15 is formed.
In this case, the position where the groove for filling the flux 20 is formed is the position where the pellet-shaped solder 18 of the solder ribbon 15 is punched out.
【００１７】さらに、図１に示した半田ボール電極の形
成方法によれば、ＢＧＡパッケージ１のランド３上に、
略円板状のペレット状半田１８を移送するので、比較
的、振動に強く、ペレット状半田１８がランド３上から
容易に移動してしまうことはないが、さらに仮止めが必
要な場合は、ランド３上に移送した際に、吸着ヘッドに
よってペレット状半田１８に圧力を加えて仮固定するよ
うにしてもよい。また、機械的圧力を加える際に超音波
を印加して行うようにしてもよい。さらに、レーザ加熱
等の方法を用いて熱を加えて仮固定するようにしてもよ
い。Further, according to the method of forming the solder ball electrode shown in FIG. 1, the solder ball electrode is formed on the land 3 of the BGA package 1.
Since the substantially disk-shaped pellet-shaped solder 18 is transferred, the pellet-shaped solder 18 is relatively resistant to vibration, and the pellet-shaped solder 18 does not easily move from the land 3. However, if temporary fixing is required, Alternatively, when the pellet-shaped solder 18 is transferred onto the land 3, pressure may be applied to the pellet-shaped solder 18 by a suction head to temporarily fix the pellet-shaped solder 18. Alternatively, ultrasonic waves may be applied when the mechanical pressure is applied. Further, heat may be applied by using a method such as laser heating to temporarily fix.
【００１８】[0018]
【発明の効果】請求孔１記載の半田ボール電極の形成方
法によれば、板状の半田材料を圧延して所望の体積のペ
レット状半田を得るための薄板状半田（半田リボン）を
形成するので、圧延ロールギャップの調整のみで、薄板
状半田（半田リボン）の厚さを精度良く制御することが
できる。また、その後、金型によって薄板状半田（半田
リボン）からペレット状半田を打ち抜くので所望の体積
を有するペレット状半田を精度良く形成することがで
き、規格の揃った半田ボール電極を形成することができ
る。さらに、製造工程がシンプルであるため、低コスト
が期待できる。According to the method of forming a solder ball electrode according to claim 1, a plate-shaped solder material is rolled to form a thin plate-shaped solder (solder ribbon) for obtaining a desired volume of pellet-shaped solder. Therefore, the thickness of the thin plate-shaped solder (solder ribbon) can be accurately controlled only by adjusting the rolling roll gap. Further, thereafter, the pellet-shaped solder is punched out from the thin plate-shaped solder (solder ribbon) by the die, so that the pellet-shaped solder having a desired volume can be accurately formed, and the solder ball electrode having a uniform standard can be formed. it can. Furthermore, since the manufacturing process is simple, low cost can be expected.
【００１９】また、請求項２または請求項３記載の半田
ボール電極の形成方法によれば、フラックス供給が容易
となる。According to the solder ball electrode forming method of the second or third aspect, the flux can be easily supplied.
【００２０】さらに、請求項４記載の半田ボール電極の
形成方法によれば、リフロー工程中に、振動によってペ
レット状半田がランド上から移動することを防止できる
ため、製造がより容易になる。Further, according to the solder ball electrode forming method of the fourth aspect, it is possible to prevent the pellet-shaped solder from moving on the land due to vibration during the reflow process, which facilitates manufacturing.
【図１】本発明の半田ボール電極の形成方法の一実施形
態を示す工程図である。FIG. 1 is a process chart showing an embodiment of a method of forming a solder ball electrode of the present invention.
【図２】本発明のペレット状半田の打ち抜きパターンの
一実施形態を示す平面図である。FIG. 2 is a plan view showing an embodiment of a punching pattern for pelletized solder of the present invention.
【図３】本発明の半田リボンの製造方法の一実施形態を
示す工程図である。FIG. 3 is a process drawing showing an embodiment of a method for manufacturing a solder ribbon of the present invention.
【図４】ＢＧＡパッケージの一例を示す図で、（ａ）及
び（ｂ）は斜視図、（ｃ）は断面図である。FIG. 4 is a diagram showing an example of a BGA package, in which (a) and (b) are perspective views and (c) is a sectional view.
【図５】従来の半田ボール電極の形成方法の一例を示す
工程図である。FIG. 5 is a process drawing showing an example of a conventional solder ball electrode forming method.
【図６】半田ボールの製造方法の一例を示す工程図であ
る。FIG. 6 is a process chart showing an example of a method for manufacturing a solder ball.
１ ＢＧＡパッケージ ２ 半田ボール電極 ６ ランド １５ 半田リボン（薄板状半田） １８，１８ａ〜１８ｈ ペレット状半田 １９ａ，１９ｂ 板状半田 ２０ フラックス 1 BGA Package 2 Solder Ball Electrode 6 Land 15 Solder Ribbon (Thin Plate Solder) 18, 18a to 18h Pellet Solder 19a, 19b Plate Solder 20 Flux
Claims (4)
ンド上に半田ボール電極を形成する、半田ボール電極の
形成方法において、長尺状の薄板状半田から所定体積の
ペレット状半田を打ち抜き、そのペレット状半田を前記
ランド上に移送し、リフローで溶融させて前記半田ボー
ル電極を形成することを特徴とする半田ボール電極の形
成方法。1. A method of forming a solder ball electrode, comprising forming a solder ball electrode on a land formed on the back surface side of a BGA package, wherein a pellet-shaped solder of a predetermined volume is punched out from a long thin plate-shaped solder, and the pellet is formed. A method for forming a solder ball electrode, comprising transferring the solder paste onto the land and melting the solder by reflow to form the solder ball electrode.
を塗布する工程を備えたことを特徴とする請求項１記載
の半田ボール電極の形成方法。2. The method for forming a solder ball electrode according to claim 1, further comprising a step of applying a flux to the long thin plate-shaped solder.
薄板状半田を形成する工程を備えたことを特徴とする請
求項１記載の半田ボール電極の形成方法。3. The method of forming a solder ball electrode according to claim 1, further comprising a step of sandwiching a flux between plate solders to form the thin plate solders.
半田に、機械的圧力または熱を印加して、前記ペレット
状半田を前記ランド上に仮止めする工程を備えたことを
特徴とする請求項１記載の半田ボール電極の形成方法。4. The step of applying mechanical pressure or heat to the pellet-shaped solder transferred onto the land to temporarily fix the pellet-shaped solder onto the land. 1. The method for forming a solder ball electrode according to 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27854295A JPH09120980A (en) | 1995-10-26 | 1995-10-26 | Formation of solder ball electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27854295A JPH09120980A (en) | 1995-10-26 | 1995-10-26 | Formation of solder ball electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09120980A true JPH09120980A (en) | 1997-05-06 |
Family
ID=17598717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27854295A Pending JPH09120980A (en) | 1995-10-26 | 1995-10-26 | Formation of solder ball electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09120980A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005294823A (en) * | 2004-03-11 | 2005-10-20 | Hitachi Metals Ltd | System and method for forming connection bumps of electronic component or the like, and device and method for bonding conductive balls |
-
1995
- 1995-10-26 JP JP27854295A patent/JPH09120980A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005294823A (en) * | 2004-03-11 | 2005-10-20 | Hitachi Metals Ltd | System and method for forming connection bumps of electronic component or the like, and device and method for bonding conductive balls |
| JP4735945B2 (en) * | 2004-03-11 | 2011-07-27 | 日立金属株式会社 | Manufacturing system for connecting bumps of electronic parts, etc. and conductive ball bonding apparatus |
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