JPH09118975A - Device and method for evaporating metal - Google Patents
Device and method for evaporating metalInfo
- Publication number
- JPH09118975A JPH09118975A JP27400095A JP27400095A JPH09118975A JP H09118975 A JPH09118975 A JP H09118975A JP 27400095 A JP27400095 A JP 27400095A JP 27400095 A JP27400095 A JP 27400095A JP H09118975 A JPH09118975 A JP H09118975A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- stable compound
- crucible
- uranium
- evaporation device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、真空容器内で加熱
手段によりるつぼ中の金属材料を加熱し蒸発させる装置
および方法に係り、特に金属材料を多量に蒸発させ、金
属薄膜あるいは金属コーティング等の真空蒸着やレーザ
同位体分離のために用いる蒸発源として好適な金属蒸発
装置および金属蒸発方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for heating and evaporating a metal material in a crucible by heating means in a vacuum container, and more particularly to evaporating a large amount of a metal material, such as a metal thin film or metal coating. The present invention relates to a metal evaporation device and a metal evaporation method suitable as an evaporation source used for vacuum deposition or laser isotope separation.
【0002】[0002]
【従来の技術】従来の真空容器内で加熱手段によりるつ
ぼ中の金属材料を加熱し蒸発させる金属蒸発装置および
蒸発方法について図3を用いて説明する。金属蒸発装置
は真空容器1内に置かれたるつぼ2と加熱手段である電
子銃3とから成る。るつぼ2内には、原料となる金属材
料4が配され、金属材料4の表面に電子銃3から偏向電
子ビーム5が照射される。これにより、金属材料4は加
熱され、金属蒸気6が生成される。るつぼ2には、るつ
ぼ2の熱変形やるつぼ2と金属材料4との反応を防ぐた
めに、水等の冷却剤を通す冷却管7が組込まれている。2. Description of the Related Art A conventional metal evaporation apparatus and method for heating and evaporating a metal material in a crucible in a vacuum container by a heating means will be described with reference to FIG. The metal evaporator comprises a crucible 2 placed in a vacuum container 1 and an electron gun 3 as a heating means. A metal material 4 as a raw material is arranged in the crucible 2, and the surface of the metal material 4 is irradiated with a deflected electron beam 5 from an electron gun 3. Thereby, the metal material 4 is heated and the metal vapor 6 is generated. In order to prevent thermal deformation of the crucible 2 and reaction between the crucible 2 and the metal material 4, a cooling pipe 7 through which a coolant such as water passes is incorporated in the crucible 2.
【0003】以上に記載した金属蒸発装置および蒸発方
法のうちで、金属材料を安価に蒸発させるため、加熱に
用いるエネルギーは一定のまま、金属材料の蒸発量を増
大せしめる金属蒸発装置および蒸発方法について以下に
説明する。Among the above-described metal evaporation devices and evaporation methods, a metal evaporation device and evaporation method for increasing the evaporation amount of a metal material while keeping the energy used for heating constant in order to evaporate the metal material inexpensively This will be described below.
【0004】特開平2−107725号公報に記載の蒸
発方法では、金属材料4が加熱され液体となり、るつぼ
2内を対流することにより、るつぼ2への熱の損失が増
大することを抑制するために、金属材料4に高融点金属
の結晶粒8を混ぜている。高融点金属の結晶粒8が対流
を抑制するため、金属材料4により多くの熱が蓄積さ
れ、金属材料表面の温度が増し蒸発量が増大する。In the evaporation method described in Japanese Patent Application Laid-Open No. 2-107725, the metal material 4 is heated to become a liquid, and convection in the crucible 2 suppresses an increase in heat loss to the crucible 2. In addition, the crystal grain 8 of the refractory metal is mixed with the metal material 4. Since the crystal grains 8 of the refractory metal suppress the convection, a large amount of heat is accumulated in the metal material 4, the temperature of the metal material surface increases, and the evaporation amount increases.
【0005】また、特開昭62−129132号公報に
記載の金属溶解用るつぼについて図4を用いて説明す
る。このるつぼは、熱損失を低減するために、金属材料
4の熱伝導率より低い熱伝導率をもつ炭素材料9を内側
に配し、この炭素材料9の外側にはさらに熱伝導率の低
いジルコニウム材料10を配し、さらにジルコニウム材
料10の外側には冷却管7を有したグラファイト材料1
1を配して構成される。るつぼ材料が銅等の金属ではな
く、熱伝導率が低い材料を使用することにより熱伝導に
よるるつぼへの熱の移動が抑制され、金属材料4により
多くの熱が蓄積され、金属材料表面の温度が増し蒸発量
が増大する。Further, the crucible for melting a metal disclosed in JP-A-62-129132 will be described with reference to FIG. In this crucible, in order to reduce heat loss, a carbon material 9 having a thermal conductivity lower than that of the metal material 4 is arranged inside, and zirconium having a lower thermal conductivity is disposed outside the carbon material 9. Graphite material 1 in which material 10 is arranged and cooling tube 7 is provided outside zirconium material 10
It is configured by arranging 1. When the crucible material is not a metal such as copper, but a material having a low thermal conductivity is used, heat transfer to the crucible due to heat conduction is suppressed, and a large amount of heat is accumulated in the metal material 4. And the amount of evaporation increases.
【0006】[0006]
【発明が解決しようとする課題】上記従来技術は、るつ
ぼ2内の熱の移動を抑制して、金属材料4の温度を高め
て金属材料4の蒸発量を増大させている。このように熱
伝導率の低い材料で金属材料を包む場合(断熱する場
合)は、断熱材として酸化物、炭化物および窒化物など
のセラッミクスの粉末もしくは気孔率の高い焼結体を用
いることが最も望ましい。しかし、上記従来技術では金
属材料4が液体であるか固体であるかについては考慮さ
れていなかった。従って、金属材料4をその融点以上に
保持した場合、断熱材として最適な前記セラッミクスの
粉末や気孔率の高い焼結体を用いると、当該金属がセラ
ッミクスの中へ滲み込むのを防止することができないと
いう問題があった。In the above-mentioned conventional technique, the movement of heat in the crucible 2 is suppressed, the temperature of the metal material 4 is raised, and the evaporation amount of the metal material 4 is increased. When wrapping a metal material in such a material with low thermal conductivity (for heat insulation), it is most preferable to use ceramic powder such as oxides, carbides and nitrides or a sintered body with high porosity as a heat insulating material. desirable. However, in the above-mentioned prior art, it was not considered whether the metal material 4 is a liquid or a solid. Therefore, when the metal material 4 is held at its melting point or higher, the use of the ceramic powder or the sintered body having a high porosity, which is optimal as the heat insulating material, can prevent the metal from seeping into the ceramics. There was a problem that I could not.
【0007】本発明の目的は、金属材料をその融点以上
に保持した場合に、断熱材として優れたセラミックスの
粉末や気孔のある焼結体を用いて、当該金属がセラッミ
クスの中へ滲み込むのを防止し効率良く金属材料を蒸発
させることのできる金属蒸発装置および蒸発方法を提供
することにある。It is an object of the present invention that, when a metal material is held above its melting point, the metal permeates into the ceramics by using an excellent ceramic powder or a sintered body having pores as a heat insulating material. It is an object of the present invention to provide a metal evaporation device and an evaporation method capable of preventing the above-mentioned phenomenon and efficiently evaporating a metal material.
【0008】[0008]
【課題を解決するための手段】上記目的を達成するため
に、本発明の金属蒸発装置は、真空容器と、真空容器内
に配されたるつぼと、このるつぼ内に入れられた蒸発材
料としての金属部材と、金属部材にエネルギーを照射し
て溶融し金属を蒸発させる加熱手段とを備え、そして金
属部材の側面および下面を囲うように、該金属の元素を
成分として含みかつ融点が該金属のそれより高い安定化
合物からなる外壁を設け、さらに外壁とるつぼの間に断
熱材を介在させたことを特徴とする。In order to achieve the above-mentioned object, a metal evaporation apparatus of the present invention comprises a vacuum container, a crucible arranged in the vacuum container, and an evaporation material contained in the crucible. A metal member and a heating means for irradiating the metal member with energy to melt and vaporize the metal are provided, and the element contains the element of the metal as a component and has a melting point of the metal so as to surround the side surface and the lower surface of the metal member. An outer wall made of a higher stable compound is provided, and a heat insulating material is interposed between the outer wall and the crucible.
【0009】そして本発明の金属蒸発装置においては、
断熱材が安定化合物と同一成分の粉末あるいは焼結体か
ら構成するのが好ましい。また安定化合物の外壁は、金
属部材表面に皮膜として形成されていることが好まし
い。ここで安定化合物は、金属の酸化物、炭化物あるい
は窒化物である。And, in the metal evaporator of the present invention,
It is preferable that the heat insulating material is composed of a powder or a sintered body having the same components as the stable compound. The outer wall of the stable compound is preferably formed as a film on the surface of the metal member. The stable compound here is a metal oxide, carbide or nitride.
【0010】金属部材の側面および下面を囲う安定化合
物の外壁は、金属部材の周りに、安定化合物を構成する
元素と同一の元素からなり安定化合物より低い融点を有
する不安定化合物の粉末を配置し、この不安定化合物の
粉末を金属部材を介して加熱することにより分解し、安
定化合物の皮膜として形成するとよい。The outer wall of the stable compound that surrounds the side surface and the lower surface of the metal member has a powder of an unstable compound which is composed of the same element as the constituent element of the stable compound and has a melting point lower than that of the stable compound, around the metal member. It is preferable that the powder of the unstable compound is decomposed by heating through the metal member to form a film of the stable compound.
【0011】上記の金属蒸発装置において、蒸発材料で
ある金属部材を加熱手段によりエネルギーを照射した
時、金属部材は溶融し、特にエネルギーが照射された部
分から多量の金属蒸気が発生する。通常、安定化合物か
らなる外壁は、金属部材より高い融点をもつため、溶融
金属は外壁内に閉じ込められ、断熱材中へ滲み込むこと
がない。In the above metal evaporation device, when the metal member, which is the evaporation material, is irradiated with energy by the heating means, the metal member is melted, and a large amount of metal vapor is generated particularly from the portion irradiated with energy. Usually, the outer wall made of a stable compound has a higher melting point than the metal member, so that the molten metal is confined in the outer wall and does not seep into the heat insulating material.
【0012】さらに安定化合物は金属部材を構成する金
属を成分とする化合物であるので、安定化合物の外壁と
溶融金属との界面で安定化合物から原子が移動しても溶
融金属の純度低下を抑制できる。また当該金属の酸化
物、炭化物または窒化物からなる安定化合物は、上記界
面から移動した場合に溶融金属表面に達した時、酸素、
炭素または窒素が気体となって真空容器から除去され、
金属蒸気の純度低下を抑制できる。Further, since the stable compound is a compound containing a metal constituting the metal member as a component, even if atoms move from the stable compound at the interface between the outer wall of the stable compound and the molten metal, deterioration of the purity of the molten metal can be suppressed. . Further, a stable compound composed of an oxide, a carbide or a nitride of the metal, when it reaches the surface of the molten metal when moving from the interface, oxygen,
Carbon or nitrogen becomes a gas and is removed from the vacuum container,
It is possible to suppress a decrease in the purity of metal vapor.
【0013】断熱材は、溶融金属から安定化合物の外壁
を介して伝わる熱を断熱して溶融金属の温度を保持し、
加熱手段からの投入パワーで効率良く金属材料を蒸発さ
せることができる。また断熱材を外壁の安定化合物と同
一材質で構成すれば、溶融金属が過度に温度上昇して外
壁が破れた場合でも断熱材が外壁を再生し、溶融金属の
漏洩を防止する。The heat insulating material insulates the heat transmitted from the molten metal through the outer wall of the stable compound to maintain the temperature of the molten metal,
The metal material can be efficiently evaporated by the input power from the heating means. Further, if the heat insulating material is made of the same material as the stable compound of the outer wall, the heat insulating material regenerates the outer wall even when the temperature of the molten metal rises excessively and the outer wall is broken, and the leakage of the molten metal is prevented.
【0014】また、金属部材を囲む安定化合物の外壁
は、蒸発する金属部材を構成する金属を成分として含み
かつ安定化合物の融点より低い温度で熱分解する不安定
化合物の粉末を予め金属部材の周りに設置し、金属部材
を加熱することで不安定な化合物を分解し安定な化合物
の皮膜を金属部材表面に形成させることができるため
に、安定な化合物を他の特別な装置を使用せず当該金属
蒸発装置を用いて容易に形成することができる。Further, the outer wall of the stable compound surrounding the metal member is preliminarily surrounded by a powder of an unstable compound which contains, as a component, a metal constituting the vaporizing metal member and which is thermally decomposed at a temperature lower than the melting point of the stable compound. The stable compound can be decomposed by heating the metal member to form a stable compound film on the surface of the metal member, so that the stable compound can be used without using other special equipment. It can be easily formed using a metal evaporator.
【0015】また上記目的を達成するために、本発明の
金属蒸発方法は、上記金属蒸発装置を用いるものであっ
て、蒸発材料である金属部材を当該金属の融点より高く
かつ安定化合物の融点より低い温度範囲に保持して、金
属を蒸発させることを特徴とする。In order to achieve the above object, the metal evaporation method of the present invention uses the above metal evaporation apparatus, wherein the metal member as an evaporation material is higher than the melting point of the metal and higher than the melting point of the stable compound. It is characterized in that it is kept in a low temperature range to evaporate the metal.
【0016】[0016]
【発明の実施の形態】以下、本発明の実施の形態を図を
用いて詳細に説明する。図1に、本発明の第1の実施の
形態である金属蒸発装置の構成を示す。第1の実施の形
態の金属蒸発装置は、真空排気装置12で排気された真
空容器1と、真空容器1内に置かれたるつぼ2、るつぼ
2内に装荷された金属材料4、金属材料4の表面の一部
を加熱する加熱手段としての電子銃3等を備えており、
さらに金属材料4には上面を除いて側面および下面を覆
う安定化合物14の外壁が皮膜として形成され、またそ
の周囲に断熱材15がるつぼ2との間に介在して設置さ
れている。安定化合物14は金属材料4の成分である金
属の化合物で、かつ融点が当該金属より高く安定なもの
である。るつぼ2には冷却管7が埋め込まれ水冷されて
いる。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 shows the configuration of a metal evaporation device according to a first embodiment of the present invention. The metal evaporation apparatus of the first embodiment includes a vacuum container 1 exhausted by a vacuum exhaust device 12, a crucible 2 placed in the vacuum container 1, a metal material 4 loaded in the crucible 2, and a metal material 4. Equipped with an electron gun 3 as a heating means for heating a part of the surface of
Further, an outer wall of the stable compound 14 which covers the side surface and the lower surface except the upper surface is formed as a film on the metal material 4, and a heat insulating material 15 is provided around the outer wall so as to be interposed between the heat insulating material 15 and the crucible 2. The stable compound 14 is a compound of a metal that is a component of the metal material 4 and has a melting point higher than that of the metal and is stable. A cooling pipe 7 is embedded in the crucible 2 for water cooling.
【0017】加熱手段は電子銃3と電子銃電源13とで
構成され、偏向電子ビーム5が金属材料4の表面に照射
される。これにより、金属材料4は温度が高められ、特
に電子ビーム5が照射されている箇所のみが他の表面よ
り温度が高く、蒸発も当該照射場所のみで生じ金属蒸気
6を発生する。第1の実施の形態では、金属材料4とし
てウラン(U)約600グラムを用いた。また、安定化
合物14として二酸化ウラン(UO2)を用い、金属ウ
ランの表面をこれにより皮膜した。さらに断熱材15と
しては酸化イットリウム(Y2O3)の粉末を使用した。
電子銃3の出力4kWを投入したとき、電子ビーム照射
部の温度は約3500℃になった。また、金属材料4
(U)と安定化合物14(UO2)の界面の温度はウランの
融点(1102℃)より高くかつUO2の融点(2760
℃)より低い2000℃となった。従って、UO2の皮
膜により液体ウランを閉じこめることができ、ウランが
断熱材の中へ滲み出すことがなかった。このとき断熱材
の使用の効果により、投入パワーは断熱材を用いなかっ
た場合の1/3であったにもかかわらず、電子ビーム照
射部の温度は約300℃高いため、蒸発量は約7倍とな
った。従って、蒸発効率(蒸発に用いられるエネルギー
/投入パワー)は約20倍向上した。The heating means is composed of the electron gun 3 and the electron gun power source 13, and the surface of the metal material 4 is irradiated with the deflected electron beam 5. As a result, the temperature of the metal material 4 is raised, and particularly the temperature of the portion irradiated with the electron beam 5 is higher than that of the other surface, and evaporation occurs only at the irradiation position to generate the metal vapor 6. In the first embodiment, about 600 grams of uranium (U) was used as the metal material 4. Further, uranium dioxide (UO 2 ) was used as the stable compound 14, and the surface of the metal uranium was coated with this. Further, as the heat insulating material 15, yttrium oxide (Y 2 O 3 ) powder was used.
When the output of the electron gun 3 of 4 kW was applied, the temperature of the electron beam irradiation part reached about 3500 ° C. Also, metal material 4
The temperature at the interface between (U) and the stable compound 14 (UO 2 ) is higher than the melting point of uranium (1102 ° C.) and the melting point of UO 2 (2760).
2000 ° C., which is lower than the temperature (° C.). Therefore, the liquid uranium could be confined by the UO 2 film, and the uranium did not seep into the heat insulating material. At this time, due to the effect of using the heat insulating material, although the input power was ⅓ of that when the heat insulating material was not used, the temperature of the electron beam irradiation part was about 300 ° C. higher, so the evaporation amount was about 7 Doubled. Therefore, the evaporation efficiency (energy used for evaporation / input power) was improved about 20 times.
【0018】次に図2を用いて、金属材料4であるウラ
ンの周りにUO2の皮膜を形成する方法について説明す
る。最初に図2の(a)に示すように、ウランの周囲に
ウランを成分として含みかつ熱分解してUO2となるウ
ランの高次酸化物(U3O8)16を設置する。その外側
にはUO2の粉末15を置いた。この状態で電子銃によ
りウラン表面を加熱するとU3O8の温度が上昇して熱分
解し、UO2と酸素が生成される。金属の温度はUO2の
融点よりは低いため、図4の(b)に示すようにUO2
は固体としてウランの周囲に皮膜を形成する。一方、酸
素は気体なので真空排気装置により排気される。この方
法によれば、特別な装置を使用せず、実施の形態1の蒸
発装置を用いて安定な化合物の皮膜を形成することが可
能である。Next, a method for forming a UO 2 film around uranium which is the metal material 4 will be described with reference to FIG. First, as shown in FIG. 2A, a uranium high-order oxide (U 3 O 8 ) 16 containing uranium as a component and thermally decomposed into UO 2 is installed around the uranium. A powder 15 of UO 2 was placed on the outside thereof. When the surface of the uranium is heated by the electron gun in this state, the temperature of U 3 O 8 rises and is thermally decomposed to generate UO 2 and oxygen. Since lower than the melting point of the metal temperature UO 2, UO 2 as shown in FIG. 4 (b)
Forms a film around uranium as a solid. On the other hand, since oxygen is a gas, it is exhausted by a vacuum exhaust device. According to this method, it is possible to form a stable compound film by using the evaporation device of the first embodiment without using a special device.
【0019】次に、本発明の第2の実施の形態の金属蒸
発装置について説明する。この金属蒸発装置の構成は図
1と同様である。但し、断熱材15としてイットリウム
の代りに、安定化合物であるUO2の粉末を用いた。実
施の形態2の装置が優れている点は、誤ってパワーを投
入し過ぎて、ウラン(U)の温度をUO2の融点より高く
してUO2の皮膜14が破れた場合でも、断熱材15に
滲み込んだウラン(U)と断熱材15(UO2)との反応で
自立的にウランの周囲にUO2の皮膜を再形成すること
にある。本実施の形態2では、わざとパワーを8kW投
入して最初に形成したUO2の皮膜14を破壊した。こ
の後、一旦電子銃の運転を止め、ウランの状態を確認し
たところ、断熱材15のUO2により皮膜が再形成され
ていた。再度、真空排気して、電子銃3によりウラン4
を加熱して蒸発させたところ、投入パワーを4kWにす
ると、第1の実施の形態の装置と同様に断熱材15を用
いなかった場合と比較して、蒸発量は約7倍となった。
このため、蒸発効率も同様に約20倍向上した。即ち、
第2の実施の形態の装置では安定化合物の皮膜が破壊さ
れた場合でも、一旦投入するパワーを低下させれば、自
立的に安定な化合物の皮膜を形成できる。Next, a metal evaporation device according to a second embodiment of the present invention will be described. The structure of this metal evaporator is the same as in FIG. However, as the heat insulating material 15, powder of stable compound UO 2 was used instead of yttrium. The advantage of the device of the second embodiment is that even if the power of uranium (U) is raised higher than the melting point of UO 2 and the UO 2 coating 14 is broken, the heat insulating material is erroneously applied. The reaction between the uranium (U) soaked in 15 and the heat insulating material 15 (UO 2 ) is to autonomously reform the UO 2 film around the uranium. In the second embodiment, the power of 8 kW was deliberately applied to destroy the UO 2 film 14 formed first. After that, when the operation of the electron gun was stopped once and the state of uranium was confirmed, the film was re-formed by UO 2 of the heat insulating material 15. Evacuate again and use the electron gun 3 to move the uranium 4
When was heated to evaporate, when the input power was set to 4 kW, the amount of evaporation was about 7 times as much as in the case of not using the heat insulating material 15 as in the device of the first embodiment.
Therefore, the evaporation efficiency was also improved about 20 times. That is,
In the device of the second embodiment, even if the film of the stable compound is destroyed, the film of the stable compound can be formed autonomously by reducing the power applied once.
【0020】次に安定な化合物として炭化物を用いた場
合の実施の形態を説明する。安定な化合物として一炭化
ウラン(UC)を用いた。一炭化ウランの融点は252
5℃なので、二酸化ウラン(UO2)を用いた場合と同
様にウランを2000℃で保持することができる。ま
た、皮膜の形成に用いる不安定な化合物としては高次炭
化物(U2C3)を使用した。Next, an embodiment in which a carbide is used as a stable compound will be described. Uranium monocarbide (UC) was used as the stable compound. The melting point of uranium monocarbide is 252.
Since it is 5 ° C., uranium can be kept at 2000 ° C. as in the case of using uranium dioxide (UO 2 ). Further, higher order carbide (U 2 C 3 ) was used as the unstable compound used for forming the film.
【0021】以上の各実施の形態では、断熱材としては
粉末を用いたがこれ以外に気孔率の高い焼結体を使用す
ることも可能である。In each of the above embodiments, powder was used as the heat insulating material, but it is also possible to use a sintered body having a high porosity.
【0022】[0022]
【発明の効果】本発明によれば、蒸発材料である金属部
材に該金属より融点の高くかつ該金属を成分とする安定
化合物からなる外壁を設け、さらに断熱材を介在させて
該蒸発材料をるつぼに入れるので、外壁により金属を閉
じ込めて漏洩を防止できると共に溶融金属の純度低下を
抑制でき、断熱材により蒸発材料の溶融金属を所定温度
に容易に保持でき、効率良く金属蒸気を生成することが
できる。According to the present invention, a metal member, which is an evaporation material, is provided with an outer wall made of a stable compound having a melting point higher than that of the metal and containing the metal, and the evaporation material is further interposed with a heat insulating material interposed. Since it is placed in a crucible, the metal can be confined by the outer wall to prevent leakage and the purity of the molten metal can be prevented from decreasing, and the molten metal of the vaporized material can be easily maintained at a predetermined temperature by the heat insulating material, and efficient metal vapor generation You can
【0023】また断熱材を外壁を構成する安定化合物と
同材質とすることにより、外壁破損の場合に外壁を再生
することができる。Further, by making the heat insulating material the same material as the stable compound constituting the outer wall, the outer wall can be regenerated in the case of damage to the outer wall.
【図1】本発明の第1の実施の形態の金属蒸発装置の構
成図である。FIG. 1 is a configuration diagram of a metal evaporation device according to a first embodiment of the present invention.
【図2】金属材料に安定な化合物の皮膜を形成する方法
を示す模式図である。FIG. 2 is a schematic diagram showing a method for forming a stable compound film on a metal material.
【図3】従来例である金属蒸発装置の構成図である。FIG. 3 is a configuration diagram of a conventional metal evaporation device.
【図4】他の従来例である金属蒸発装置の構成図であ
る。FIG. 4 is a configuration diagram of another conventional metal evaporation device.
1 真空容器 2 るつぼ 3 電子銃 4 金属材料 5 電子ビーム 6 金属蒸気 7 冷却管 12 真空排気装置 13 電子銃電源 14 安定化合物 15 断熱材 16 不安定化合物 1 Vacuum Container 2 Crucible 3 Electron Gun 4 Metal Material 5 Electron Beam 6 Metal Vapor 7 Cooling Tube 12 Vacuum Evacuation Device 13 Electron Gun Power Supply 14 Stable Compound 15 Insulation Material 16 Unstable Compound
Claims (10)
つぼと、該るつぼ内に入れられた蒸発材料としての金属
部材と、該金属部材にエネルギーを照射して溶融し金属
を蒸発させる加熱手段とを備えた金属の蒸発装置におい
て、前記金属部材の側面および下面を囲い、該金属部材
の構成元素である金属を成分として含みかつ融点が該金
属のそれより高い安定化合物からなる外壁を設け、該外
壁と前記るつぼの間に断熱材を介在させたことを特徴と
する金属蒸発装置。1. A vacuum container, a crucible arranged in the vacuum container, a metal member as an evaporation material placed in the crucible, and the metal member is irradiated with energy to melt and vaporize the metal. In a metal evaporation device provided with a heating means, an outer wall surrounding a side surface and a lower surface of the metal member and including a stable compound having a metal that is a constituent element of the metal member as a component and a melting point higher than that of the metal. A metal evaporation device, characterized in that a heat insulating material is provided between the outer wall and the crucible.
の粉末からなることを特徴とする請求項1記載の金属蒸
発装置。2. The metal evaporation device according to claim 1, wherein the heat insulating material is made of powder having the same components as the stable compound.
分の焼結体からなることを特徴とする請求項1記載の金
属蒸発装置。3. The metal evaporation device according to claim 1, wherein the heat insulating material is made of a sintered body having the same components as the stable compound.
面に皮膜として形成されていることを特徴とする請求項
1、2または3に記載の金属蒸発装置。4. The metal evaporation device according to claim 1, wherein the outer wall of the stable compound is formed as a film on the surface of the metal member.
ある金属の酸化物であることを特徴とする請求項1ない
し4いずれかに記載の金属蒸発装置。5. The metal evaporation device according to claim 1, wherein the stable compound is an oxide of a metal that is a component of the metal member.
ある金属の炭化物であることを特徴とする請求項1ない
し4いずれかに記載の金属蒸発装置。6. The metal evaporation device according to claim 1, wherein the stable compound is a carbide of a metal that is a component of the metal member.
ある金属の窒化物であることを特徴とする請求項1ない
し4いずれかに記載の金属蒸発装置。7. The metal evaporation device according to claim 1, wherein the stable compound is a nitride of a metal that is a component of the metal member.
周りに、前記安定化合物を構成する元素と同一の元素か
らなり該安定化合物より低い融点を有する不安定化合物
の粉末を配置し、該不安定化合物の粉末を前記金属部材
を介して加熱することにより分解し、安定化合物の皮膜
として形成することを特徴とする請求項4記載の金属蒸
発装置。8. The outer wall of the metal member has, around the metal member, a powder of an unstable compound which is composed of the same element as that of the stable compound and has a melting point lower than that of the stable compound. The metal evaporation device according to claim 4, wherein the powder of the unstable compound is decomposed by heating through the metal member to form a film of the stable compound.
ある金属の酸化物、炭化物または窒化物であることを特
徴とする請求項8記載の金属蒸発装置。9. The metal evaporation device according to claim 8, wherein the stable compound is an oxide, a carbide, or a nitride of a metal that is a component of the metal member.
属蒸発装置を用いて、前記蒸発材料である金属部材を当
該金属の融点より高くかつ前記安定化合物の融点より低
い温度範囲に保持して、金属を蒸発させることを特徴と
する金属蒸発方法。10. The metal evaporation device according to claim 1, wherein the metal member as the evaporation material is kept in a temperature range higher than the melting point of the metal and lower than the melting point of the stable compound. And a method for evaporating a metal, which comprises evaporating a metal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27400095A JPH09118975A (en) | 1995-10-23 | 1995-10-23 | Device and method for evaporating metal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27400095A JPH09118975A (en) | 1995-10-23 | 1995-10-23 | Device and method for evaporating metal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH09118975A true JPH09118975A (en) | 1997-05-06 |
Family
ID=17535559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27400095A Pending JPH09118975A (en) | 1995-10-23 | 1995-10-23 | Device and method for evaporating metal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH09118975A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140030871A (en) * | 2012-09-04 | 2014-03-12 | 삼성전기주식회사 | Refractory structure for manufacturing nickel powder and manufacturing method of nickel powder |
-
1995
- 1995-10-23 JP JP27400095A patent/JPH09118975A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140030871A (en) * | 2012-09-04 | 2014-03-12 | 삼성전기주식회사 | Refractory structure for manufacturing nickel powder and manufacturing method of nickel powder |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103080366A (en) | Heating apparatus, vacuum-heating method and method for manufacturing thin film | |
JP2013008686A (en) | Solid oxide electrolyte for fuel cell, and fuel cell including solid oxide electrolyte | |
US5148440A (en) | Wick for metal vapor laser | |
JPS6163513A (en) | Silicon melting method and device therefor, manufacture of silicon rod and method of coating substrate with silicon | |
Swenumson et al. | Continuous flow reflux oven as the source of an effusive molecular Cs beam | |
JPH09118975A (en) | Device and method for evaporating metal | |
KR100548931B1 (en) | Ion source, method of operating the sane, and ion source system | |
JP4876212B2 (en) | Vaporizer and plasma processing apparatus having vaporizer | |
GB1520935A (en) | Laser device | |
US4508055A (en) | Device for cryogenically fabricating source material for plasma X-ray lasers | |
JP3341780B2 (en) | Crucible for vacuum deposition equipment | |
EP0637689A2 (en) | Heat-conducting coating for ceramic materials of ion engines | |
CN111304598B (en) | Evaporation assembly and method | |
GB1108499A (en) | Cooling system for nuclear reactors | |
JPS62235466A (en) | Vapor deposition material generator | |
JP2585352B2 (en) | Melting tank | |
JPH0646293U (en) | Crucible for vapor deposition | |
CN111304599A (en) | Evaporation assembly and method | |
JP4670613B2 (en) | Film forming method, film forming apparatus, and film forming target | |
JP2874436B2 (en) | Vacuum evaporation method | |
JPS62118517A (en) | Vapor jetting device of melted material | |
JPS6197885A (en) | Metallic vapor laser | |
JPS61285712A (en) | Thin film forming apparatus | |
JPS6386861A (en) | Replenishing device for vapor deposition material | |
JPH0196372A (en) | Ion plating apparatus |