JPH09113325A - Semiconductor flowmeter - Google Patents

Semiconductor flowmeter

Info

Publication number
JPH09113325A
JPH09113325A JP7268393A JP26839395A JPH09113325A JP H09113325 A JPH09113325 A JP H09113325A JP 7268393 A JP7268393 A JP 7268393A JP 26839395 A JP26839395 A JP 26839395A JP H09113325 A JPH09113325 A JP H09113325A
Authority
JP
Japan
Prior art keywords
pressure
semiconductor
flow rate
diaphragm
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7268393A
Other languages
Japanese (ja)
Inventor
Toshio Aga
敏夫 阿賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp filed Critical Yokogawa Electric Corp
Priority to JP7268393A priority Critical patent/JPH09113325A/en
Publication of JPH09113325A publication Critical patent/JPH09113325A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To calculate the flow rate easily based on a pressure variation detected by a detection element by disposing a substrate oppositely to a pressure receiving diaphragm covering a notch in the wall of a measuring duct on the outside thereof, mounting a semiconductor pressure detection element covered with an elastic cover on the substrate and coupling the cover with the diaphragm through a transmission rod. SOLUTION: A pressure receiving diaphragm 22 is provided covering a notch 21 made in the wall of a measuring duct 11. A substrate 23 disposed oppositely thereto on the outside of duct 11 is secured by means of a screw 25 to the duct wall through a cover 24 and a sealing body 26. A silicon semiconductor pressure detection element 27 is mounted on the substrate 23 while being covered with a covering body 28 of silicon resin and the diaphragm 22 is coupled with the covering body 28 through a transmission rod 29. The diaphragm 22 is displaced by the pressure variation caused by variation in the flow rate of measuring fluid 13 and the pressure variation is transmitted through the transmission rod 29 and covering body 28 to the element 27. Output signal from the element 27 is processed by a processing circuit 31 thus determining the flow rate of fluid 13.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、簡潔な構成により
小流量が容易に測定でき、且つ、安価な半導体流量計に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inexpensive semiconductor flowmeter which can easily measure a small flow rate with a simple structure.

【０００２】[0002]

【従来の技術】従来、小流量の測定には、例えば、書名
「計装システムの基礎と応用」 千本資、花淵 太編
オーム社発行 Ｐ９５に示される容積流量計、Ｐ９８に
示されるタービン流量計、Ｐ９３に示されるフロート形
面積式流量計が使用されて来た。2. Description of the Related Art Conventionally, for measuring a small flow rate, for example, the book title "Basics and Applications of Instrumentation Systems", edited by Ken Shimoto and Futana Hanabuchi
The volume flow meter shown in P95, the turbine flow meter shown in P98, and the float type area flow meter shown in P93 have been used.

【０００３】[0003]

【発明が解決しようとする課題】しかしながら、この様
な装置において、前二者は工業用が主なもので、高精度
だが、構造が複雑で、高価という欠点がある。フロート
形面積式流量計は安価だが、垂直に使用しなければなら
ず、取付姿勢に制限があるという欠点がある。本発明
は、この問題点を、解決するものである。However, in such a device, the former two are mainly for industrial use and have high precision, but have the drawbacks of complicated structure and high cost. The float type area flow meter is inexpensive, but it has the drawback that it must be used vertically and the mounting posture is limited. The present invention solves this problem.

【０００４】本発明の目的は、簡潔な構成により小流量
が容易に測定でき、且つ、安価な半導体流量計を提供す
るにある。An object of the present invention is to provide an inexpensive semiconductor flowmeter which can easily measure a small flow rate with a simple structure.

【０００５】[0005]

【課題を解決するための手段】この目的を達成するため
に、本発明は、 （１）測定管路の管壁に、流量検出器が設けられた半導
体流量計において、前記測定管路の管壁に設けられた切
り欠き部と、該切り欠き部を覆って設けられた受圧ダイ
アフラムと、該受圧ダイアフラムに対向して前記測定管
路外側に設けられた基板と、該基板に設けられたシリコ
ン半導体圧力検出素子と、該シリコン半導体圧力検出素
子を覆って設けられた弾性を有する被覆体と、該被覆体
と前記受圧ダイアフラムとを連結する伝達棒と、前記シ
リコン半導体圧力検出素子の圧力変化に対応した電気信
号から流量を演算する演算回路とを具備したことを特徴
とする半導体流量計。 （２）前記シリコン半導体圧力検出素子に形成されたピ
エゾ抵抗素子が剪断形ゲージであることを特徴とする請
求項１記載の半導体流量計。を構成したものである。In order to achieve this object, the present invention provides (1) a semiconductor flowmeter in which a flow rate detector is provided on a pipe wall of a measurement pipe line. A notch provided in the wall, a pressure receiving diaphragm provided so as to cover the notch, a substrate provided outside the measurement pipe line facing the pressure receiving diaphragm, and a silicon provided on the substrate. A semiconductor pressure detecting element, an elastic coating provided to cover the silicon semiconductor pressure detecting element, a transmission rod connecting the coating and the pressure receiving diaphragm, and a pressure change of the silicon semiconductor pressure detecting element. A semiconductor flow meter, comprising: an arithmetic circuit for calculating a flow rate from a corresponding electric signal. (2) The semiconductor flowmeter according to claim 1, wherein the piezoresistive element formed on the silicon semiconductor pressure detecting element is a shear type gauge. It is what constituted.

【０００６】[0006]

【作用】以上の構成において、測定流体の流量変化によ
る圧力変化により、受圧ダイアフラムが変位する。受圧
ダイアフラムの変位に基づき伝達棒が変位して、被覆体
を介して、シリコン半導体圧力検出素子に圧力変化を伝
達する。この圧力変化はシリコン半導体圧力検出素子に
より電気信号に変換され、演算回路により測定流体の流
量が演算される。以下、実施例に基づき詳細に説明す
る。In the above structure, the pressure receiving diaphragm is displaced by the pressure change due to the change in the flow rate of the measurement fluid. The transmission rod is displaced based on the displacement of the pressure receiving diaphragm, and the pressure change is transmitted to the silicon semiconductor pressure detection element via the cover. This pressure change is converted into an electric signal by the silicon semiconductor pressure detection element, and the flow rate of the measurement fluid is calculated by the calculation circuit. Hereinafter, detailed description will be given based on examples.

【０００７】[0007]

【発明の実施の形態】図１は本発明装置の使用例の構成
説明図、図２は本発明の一実施例の要部構成説明図、図
３は図２の動作説明図、図４は図１の平面図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a structural explanatory view of an example of use of the device of the present invention, FIG. 2 is a structural explanatory view of a main part of one embodiment of the present invention, FIG. 3 is an operational explanatory diagram of FIG. 2, and FIG. It is a top view of FIG.

【０００８】図２において、１１は測定管路、１２は測
定管路１１の管壁に設けられた本発明の半導体流量計で
ある。流量検出器部分１２が取付られる、測定管路１１
の管壁部分は、この場合は、管路１１が絞られており、
その前後の測定管路１１の断面積より小さく構成されて
いる。In FIG. 2, reference numeral 11 is a measuring pipe line, and 12 is a semiconductor flowmeter of the present invention provided on the pipe wall of the measuring pipe line 11. Measuring line 11 to which the flow detector part 12 is attached
In this case, the pipe wall portion of the pipe line 11 is narrowed,
It is configured to be smaller than the cross-sectional area of the measurement pipe line 11 before and after that.

【０００９】１３は測定流体である。測定流体１３は気
体でも液体でも良い。図１において、２１は測定管路１
１の管壁に設けられた切り欠き部である。２２は、切り
欠き部２１を覆って設けられた受圧ダイアフラムであ
る。受圧ダイアフラム２２は、ゴム等の弾性体、又は、
金属が使用され、測定流体の種類により選択される。Reference numeral 13 is a measurement fluid. The measurement fluid 13 may be gas or liquid. In FIG. 1, reference numeral 21 denotes a measuring pipe line 1.
It is a notch provided in the pipe wall of No. 1. Reference numeral 22 is a pressure receiving diaphragm provided so as to cover the cutout portion 21. The pressure receiving diaphragm 22 is an elastic body such as rubber, or
A metal is used and is selected according to the type of measurement fluid.

【００１０】２３は、受圧ダイアフラム２２に対向して
測定管路外側に設けられた基板である。基板２３は、こ
の場合は、蓋２４により、測定管路１１の管壁に、ねじ
２５止めされている。２６は、基板２３と測定管路１１
の管壁との隙間をシールするシール体である。Reference numeral 23 is a substrate which is provided outside the measurement pipe line so as to face the pressure receiving diaphragm 22. In this case, the base plate 23 is screwed to the pipe wall of the measuring pipe line 11 by means of the lid 24. 26 is a substrate 23 and a measurement conduit 11
It is a sealing body that seals the gap between the tube wall and the tube wall.

【００１１】２７は、基板２３に設けられたシリコン半
導体圧力検出素子である。シリコン半導体圧力検出素子
２７は、半導体よりなるセンサチップ２７１と、センサ
チップ２７１にダイアフラム２７２を形成する凹部２７
３と、ダイアフラム２７２に設けられた歪検出センサ２
７４とよりなる。この場合は、剪断型ゲージが使用され
ている。Reference numeral 27 is a silicon semiconductor pressure detecting element provided on the substrate 23. The silicon semiconductor pressure detecting element 27 includes a sensor chip 271 made of a semiconductor and a recess 27 for forming a diaphragm 272 on the sensor chip 271.
3 and the strain detection sensor 2 provided on the diaphragm 272.
74. In this case, shear gauges are used.

【００１２】２８は、シリコン半導体圧力検出素子２７
を覆って設けられた弾性を有する被覆体である。この場
合は、シリコン樹脂が使用されている。２９は、被覆体
２８と受圧ダイアフラム２２とを連結する伝達棒であ
る。28 is a silicon semiconductor pressure detecting element 27.
Is a covering body having elasticity and covering the. In this case, silicone resin is used. Reference numeral 29 is a transmission rod that connects the covering body 28 and the pressure receiving diaphragm 22.

【００１３】３１は、シリコン半導体圧力検出素子２７
の圧力変化に対応した電気信号から、流量を演算する演
算回路である。４１は基板２３に設けられた導圧孔、４
２は蓋２４に設けられた導圧孔である。31 is a silicon semiconductor pressure detecting element 27.
Is a calculation circuit that calculates a flow rate from an electric signal corresponding to the pressure change. 41 is a pressure guide hole provided in the substrate 23,
Reference numeral 2 is a pressure guide hole provided in the lid 24.

【００１４】以上の構成において、測定流体１３の流量
変化による圧力変化により、受圧ダイアフラム２２が変
位する。受圧ダイアフラム２２の変位に基づき伝達棒２
９が変位して、被覆体２８を介して、シリコン半導体圧
力検出素子２７に圧力変化を伝達する。In the above structure, the pressure receiving diaphragm 22 is displaced by the pressure change due to the change in the flow rate of the measurement fluid 13. Based on the displacement of the pressure receiving diaphragm 22, the transmission rod 2
9 is displaced, and the pressure change is transmitted to the silicon semiconductor pressure detection element 27 via the cover 28.

【００１５】この圧力変化はシリコン半導体圧力検出素
子２７により電気信号に変換され、演算回路３１により
測定流体の流量が演算される。This pressure change is converted into an electric signal by the silicon semiconductor pressure detecting element 27, and the flow rate of the measurement fluid is calculated by the arithmetic circuit 31.

【００１６】即ち、図３，図４において、流量検出器部
分１２が取付られている個所の、測定流体１３の圧力を
Ｐ、流量をＱ、流速をＶ、流体密度をρ、断面積をＳと
すれば、ベルヌーイの定理より、That is, in FIGS. 3 and 4, the pressure of the measurement fluid 13 at the location where the flow rate detector portion 12 is attached is P, the flow rate is Q, the flow velocity is V, the fluid density is ρ, and the cross-sectional area is S. Then, from Bernoulli's theorem,

【００１７】Ｐ＋Ｋ1（１／２）ρＶ2＝Ｃ1 Ｋ1、Ｃ：定数 ∴Ｐ＝Ｃ1−Ｋ1（１／２）ρＶ2 故に、流量検出器部分１２の個所の圧力（静圧）Ｐは、
流速Ｖの２乗に比例して低下する。P + K 1 (1/2) ρV 2 = C 1 K 1 , C: constant ∴P = C 1 -K 1 (1/2) ρV 2 Therefore, the pressure (static pressure) at the flow detector portion 12 is ) P is
It decreases in proportion to the square of the flow velocity V.

【００１８】流量Ｑ＝ＶＳより ∴Ｑ＝Ｓ（Ｃ2−（（２Ｐ）／（Ｋ1ρ）））1/2 したがって、流量Ｑが求められる。From the flow rate Q = VS ∴Q = S (C 2 -((2P) / (K 1 ρ))) 1/2 Therefore, the flow rate Q is obtained.

【００１９】測定流体１３の圧力Ｐの変化は、流速Ｖが
大きい程、大きくなるので、この場合は、図４に示す如
く、流量検出器部分１２の個所の断面積Ｓは絞られてい
る。Since the change in the pressure P of the measuring fluid 13 increases as the flow velocity V increases, in this case, the cross-sectional area S of the portion of the flow rate detector portion 12 is narrowed as shown in FIG.

【００２０】次に、具体例に就いての検討結果を以下に
示す。測定流体１３が水で、流速１ｍ／ｓの場合。０ｍ
／ｓからの圧力変化ΔＰはρ＝１０２ｋｇ・ｓ2／ｍ4な
ので、 ΔＰ≒１／２ρＶ2≒（1/2）×１０２×１2 ＝５１×１０-4ｋｇｆ／ｃｍ2＝５１ｍｍＨ2ＯNext, the results of studies on specific examples are shown below. When the measurement fluid 13 is water and the flow velocity is 1 m / s. 0m
Since the pressure change ΔP from / s is ρ = 102 kg · s 2 / m 4 , ΔP≈1 / 2ρV 2 ≈ (1/2) × 102 × 1 2 = 51 × 10 −4 kgf / cm 2 = 51 mmH 2 O

【００２１】受圧ダイアフラム２２の面積をＡ1、伝達
棒２９の断面積をＡ2とすれば、シリコン半導体圧力検
出素子２７に加わる圧力Ｐ1は次式となる。 Ｐ1＝（Ａ1／Ａ2）ＰWhen the area of the pressure receiving diaphragm 22 is A 1 and the cross-sectional area of the transmission rod 29 is A 2 , the pressure P 1 applied to the silicon semiconductor pressure detecting element 27 is given by the following equation. P 1 = (A 1 / A 2 ) P

【００２２】今、受圧ダイアフラム２２の直径Ｄ1＝１
０ｍｍ、伝達棒２９の直径Ｄ2＝２ｍｍとすれば、Ａ1／
Ａ2＝２５ Ｐ1≒２５×５０＝１２５０ｍｍＨ2Ｏ このＰ1は、シリコン半導体圧力検出素子２７で実際に
十分検出できる。Now, the diameter D 1 of the pressure receiving diaphragm 22 is 1
0 mm and the diameter D 2 of the transmission rod 29 = 2 mm, A 1 /
A 2 = 25 P 1 ≈25 × 50 = 1250 mmH 2 O This P 1 can be actually and sufficiently detected by the silicon semiconductor pressure detection element 27.

【００２３】この結果、 （１）主要部は切り欠き部２１と、受圧ダイアフラム２
２と、シリコン半導体圧力検出素子２７と、被覆体２８
と、伝達棒２９とで構成されたので、装置が小型化で
き、安価な半導体流量計が得られる。As a result, (1) the main part is the notch 21 and the pressure receiving diaphragm 2
2, a silicon semiconductor pressure detection element 27, and a cover 28
And the transmission rod 29, the device can be downsized and an inexpensive semiconductor flowmeter can be obtained.

【００２４】（２）検出部分は、測定管路１１外に設け
られるので、圧力損失が極めて少ない半導体流量計が得
られる。 （３）測定流体は、液体でも気体でも測定可能であり、
測定対象範囲が広い半導体流量計が得られる。(2) Since the detecting portion is provided outside the measuring pipe line 11, a semiconductor flowmeter with extremely small pressure loss can be obtained. (3) The measurement fluid can be a liquid or a gas,
A semiconductor flowmeter with a wide measurement range can be obtained.

【００２５】（４）シリコン半導体圧力検出素子２７
は、被覆体２８により直接覆われているので、耐汚染雰
囲気特性が良好な半導体流量計が得られる。 （５）受圧ダイアフラム２２の変位に基づき伝達棒２９
が変位して、被覆体２８を介して、シリコン半導体圧力
検出素子２７に圧力変化が伝達されるので、被覆体２８
では力は分散されると共に、全体としてシリコン半導体
圧力検出素子２７に加わるので、圧力変化が確実にシリ
コン半導体圧力検出素子２７に伝達される。(4) Silicon semiconductor pressure detecting element 27
Is covered directly with the covering body 28, so that a semiconductor flowmeter having a good anti-contamination atmosphere characteristic can be obtained. (5) Transmission rod 29 based on displacement of pressure receiving diaphragm 22
Is displaced and the pressure change is transmitted to the silicon semiconductor pressure detecting element 27 through the cover 28, so that the cover 28
Then, the force is dispersed and applied to the silicon semiconductor pressure detecting element 27 as a whole, so that the pressure change is surely transmitted to the silicon semiconductor pressure detecting element 27.

【００２６】（６）シリコン半導体圧力検出素子２７に
形成されたピエゾ抵抗素子が剪断形ゲージであれば、よ
り感度が向上された半導体流量計が得られる。 なお、前述の実施例においては、被覆体２８はシリコン
よりなると説明したが、これに限ることはない。要する
に、弾力性があり、力を伝達出来るものであれば良い。
また、被覆体２８は数種類の樹脂を多層に重ねたもので
あっても良いことは勿論である。(6) If the piezoresistive element formed on the silicon semiconductor pressure detecting element 27 is a shear type gauge, a semiconductor flowmeter with improved sensitivity can be obtained. It should be noted that, in the above-mentioned embodiment, the cover 28 is described as being made of silicon, but the present invention is not limited to this. In short, any material that has elasticity and can transmit force may be used.
Further, it goes without saying that the covering body 28 may be formed by laminating several kinds of resins in multiple layers.

【００２７】[0027]

【発明の効果】以上詳しく説明したように、本発明は、
請求項１によれば、 （１）主要部は切り欠き部と、受圧ダイアフラムと、シ
リコン半導体圧力検出素子と、被覆体と、伝達棒とで構
成されたので、装置が小型化でき、安価な半導体流量計
が得られる。As explained in detail above, the present invention provides:
According to claim 1, (1) since the main part is composed of the notch, the pressure receiving diaphragm, the silicon semiconductor pressure detecting element, the cover, and the transmission rod, the device can be downsized and inexpensive. A semiconductor flowmeter is obtained.

【００２８】（２）検出部分は、測定管路外に設けられ
るので、圧力損失が極めて少ない半導体流量計が得られ
る。 （３）測定流体は、液体でも気体でも測定可能であり、
測定対象範囲が広い半導体流量計が得られる。(2) Since the detecting portion is provided outside the measuring pipe line, a semiconductor flowmeter with extremely small pressure loss can be obtained. (3) The measurement fluid can be a liquid or a gas,
A semiconductor flowmeter with a wide measurement range can be obtained.

【００２９】（４）シリコン半導体圧力検出素子は、被
覆体により直接覆われているので、耐汚染雰囲気特性が
良好な半導体流量計が得られる。 （５）受圧ダイアフラムの変位に基づき、伝達棒が変位
して、被覆体を介して、シリコン半導体圧力検出素子に
圧力変化が伝達されるので、被覆体では力は分散される
と共に、全体としてシリコン半導体圧力検出素子に加わ
るので、圧力変化が確実にシリコン半導体圧力検出素子
に伝達される。(4) Since the silicon semiconductor pressure detecting element is directly covered with the covering body, a semiconductor flowmeter having a good anti-contamination atmosphere characteristic can be obtained. (5) Based on the displacement of the pressure-receiving diaphragm, the transmission rod is displaced, and the pressure change is transmitted to the silicon semiconductor pressure detecting element through the cover, so that the force is dispersed in the cover and the silicon as a whole is dispersed. Since the pressure change is applied to the semiconductor pressure detecting element, the pressure change is surely transmitted to the silicon semiconductor pressure detecting element.

【００３０】請求項２によれば、より感度が向上された
半導体流量計が得られる。According to the second aspect, it is possible to obtain a semiconductor flowmeter with improved sensitivity.

【００３１】従って、本発明によれば、簡潔な構成によ
り小流量が容易に測定でき、且つ、安価な半導体流量計
が得られる。Therefore, according to the present invention, it is possible to obtain an inexpensive semiconductor flow meter which can easily measure a small flow rate with a simple structure.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明装置の使用例の構成説明図である。FIG. 1 is a configuration explanatory view of a usage example of the device of the present invention.

【図２】本発明の一実施例の要部構成説明図である。FIG. 2 is an explanatory diagram of a main part configuration of an embodiment of the present invention.

【図３】図２の動作説明図である。FIG. 3 is an operation explanatory diagram of FIG. 2;

【図４】図１の平面図である。FIG. 4 is a plan view of FIG. 1;

【符号の説明】[Explanation of symbols]

１１ 測定管路 １２ 流量検出器部分 １３ 測定流体 ２１ 切り欠き部 ２２ 受圧ダイアフラム ２３ 基板 ２４ 蓋 ２５ ねじ ２６ シール体 ２７ シリコン半導体圧力検出素子 ２７１ センサチップ ２７２ ダイアフラム ２７３ 凹部 ２７４ 歪検出センサ ２８ 被覆体 ２９ 伝達棒 ３１ 演算回路 ４１ 導圧孔 ４２ 導圧孔 11 Measuring Pipe Line 12 Flow Rate Detector Part 13 Measuring Fluid 21 Notch Part 22 Pressure Receiving Diaphragm 23 Substrate 24 Lid 25 Screw 26 Sealing Body 27 Silicon Semiconductor Pressure Sensing Element 271 Sensor Chip 272 Diaphragm 273 Recess 274 Strain Sensing Sensor 28 Covering Body 29 Transmission Rod 31 Arithmetic circuit 41 Pressure hole 42 Pressure hole

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】測定管路の管壁に、流量検出器が設けられ
た半導体流量計において、 前記測定管路の管壁に設けられた切り欠き部と、 該切り欠き部を覆って設けられた受圧ダイアフラムと、 該受圧ダイアフラムに対向して前記測定管路外側に設け
られた基板と、 該基板に設けられたシリコン半導体圧力検出素子と、 該シリコン半導体圧力検出素子を覆って設けられた弾性
を有する被覆体と、 該被覆体と前記受圧ダイアフラムとを連結する伝達棒
と、 前記シリコン半導体圧力検出素子の圧力変化に対応した
電気信号から流量を演算する演算回路とを具備したこと
を特徴とする半導体流量計。1. A semiconductor flowmeter in which a flow rate detector is provided on a pipe wall of a measurement pipe line, the cutout portion being provided on the pipe wall of the measurement pipe line, and the cutout portion being provided so as to cover the cutout portion. A pressure-receiving diaphragm, a substrate provided outside the measurement conduit to face the pressure-receiving diaphragm, a silicon semiconductor pressure detecting element provided on the substrate, and an elasticity provided to cover the silicon semiconductor pressure detecting element. And a transmission rod connecting the coating and the pressure-receiving diaphragm, and an arithmetic circuit for calculating a flow rate from an electric signal corresponding to a pressure change of the silicon semiconductor pressure detection element. A semiconductor flow meter. 【請求項２】前記シリコン半導体圧力検出素子に形成さ
れたピエゾ抵抗素子が剪断形ゲージであることを特徴と
する請求項１記載の半導体流量計。2. The semiconductor flowmeter according to claim 1, wherein the piezoresistive element formed on the silicon semiconductor pressure detecting element is a shear type gauge.
JP7268393A 1995-10-17 1995-10-17 Semiconductor flowmeter Pending JPH09113325A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7268393A JPH09113325A (en) 1995-10-17 1995-10-17 Semiconductor flowmeter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7268393A JPH09113325A (en) 1995-10-17 1995-10-17 Semiconductor flowmeter

Publications (1)

Publication Number Publication Date
JPH09113325A true JPH09113325A (en) 1997-05-02

Family

ID=17457857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7268393A Pending JPH09113325A (en) 1995-10-17 1995-10-17 Semiconductor flowmeter

Country Status (1)

Country Link
JP (1) JPH09113325A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012505370A (en) * 2008-08-28 2012-03-01 デカ・プロダクツ・リミテッド・パートナーシップ Product dispensing system
GB2483776A (en) * 2010-09-15 2012-03-21 Hydril Usa Mfg Llc Riser Annulus Flow Meter and Method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012505370A (en) * 2008-08-28 2012-03-01 デカ・プロダクツ・リミテッド・パートナーシップ Product dispensing system
GB2483776A (en) * 2010-09-15 2012-03-21 Hydril Usa Mfg Llc Riser Annulus Flow Meter and Method
US8408074B2 (en) 2010-09-15 2013-04-02 Hydril Usa Manufacturing Llc Riser annulus flow meter and method

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