JPH09102623A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPH09102623A JPH09102623A JP7256243A JP25624395A JPH09102623A JP H09102623 A JPH09102623 A JP H09102623A JP 7256243 A JP7256243 A JP 7256243A JP 25624395 A JP25624395 A JP 25624395A JP H09102623 A JPH09102623 A JP H09102623A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photovoltaic element
- film
- buffer layer
- carbon film
- Prior art date
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Carbon And Carbon Compounds (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、太陽電池等の光
起電力素子に関する。TECHNICAL FIELD The present invention relates to a photovoltaic element such as a solar cell.
【０００２】[0002]
【従来の技術】クリーンなエネルギーとして、太陽光発
電が注目されている。その中でも特に非晶質シリコン半
導体薄膜を用いた光起電力素子は、大面積化、低コスト
化が図れることから注目されている。2. Description of the Related Art Photovoltaic power generation is drawing attention as clean energy. Among them, a photovoltaic element using an amorphous silicon semiconductor thin film has been attracting attention because it can achieve a large area and a low cost.
【０００３】一般に、この種の光起電力素子は、受光面
となるガラス基板上に、透明電極、内部にｐｉｎの半導
体接合を有する非晶質シリコン半導体薄膜、及び背面電
極を積層して形成されている。Generally, this type of photovoltaic element is formed by laminating a transparent electrode, an amorphous silicon semiconductor thin film having a pin semiconductor junction inside, and a back electrode on a glass substrate serving as a light receiving surface. ing.
【０００４】ところで、上記の光起電力素子は、比較的
薄い非晶質シリコン半導体薄膜で形成されるために、受
光面と相対する背面電極に銀、アルミニウム等の反射率
の高い材料を使うことで、半導体薄膜との屈折率の差に
よって生じる両者の界面での反射を用いて、実質的に光
の入射強度を強めることにより光電変換効率を向上させ
ている。By the way, since the above photovoltaic element is formed of a relatively thin amorphous silicon semiconductor thin film, a material having a high reflectance such as silver or aluminum is used for the back electrode facing the light receiving surface. Therefore, the photoelectric conversion efficiency is improved by substantially increasing the incident intensity of light by using the reflection at the interface between the semiconductor thin film and the semiconductor thin film.
【０００５】しかしながら、銀、アルミニウム等の反射
率の高い金属材料は、シリコン半導体薄膜と界面で合金
層を形成し、金属材料が持つ反射特性が悪くなるという
問題があった。However, there is a problem that a metal material having a high reflectance such as silver or aluminum forms an alloy layer at the interface with the silicon semiconductor thin film, and the reflection characteristic of the metal material is deteriorated.
【０００６】そこで、上記問題を解決するために、シリ
コン半導体薄膜と背面電極との間に透明導電膜を介在さ
せることで、両者の合金化を防止する方法が提案されて
いる（例えば、特公昭６０−４１８７８号 ＩＰＣ：Ｈ
０１Ｌ ３１／０４参照。）。Therefore, in order to solve the above problems, a method has been proposed in which a transparent conductive film is interposed between the silicon semiconductor thin film and the back electrode to prevent alloying of the two (for example, Japanese Patent Publication No. No. 60-41878 IPC: H
See 01L 31/04. ).
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上記し
た方法では、シリコン半導体薄膜と透明導電膜とで、そ
の構造が大きく異なる。このため、両者の整合性が悪
く、良好な界面特性を得ることが困難であり、太陽電池
特性を低下させる要因になるなどの問題があった。However, in the method described above, the structures of the silicon semiconductor thin film and the transparent conductive film are greatly different. For this reason, there is a problem in that the compatibility between the two is poor, it is difficult to obtain good interface characteristics, and this becomes a factor that deteriorates solar cell characteristics.
【０００８】また、シリコン半導体薄膜と背面電極との
間に介在させる膜としては、できるだけ屈折率が小さい
方がよく、透明導電膜に代わる材料が切望されていた。As a film to be interposed between the silicon semiconductor thin film and the back electrode, it is preferable that the refractive index is as small as possible, and a material replacing the transparent conductive film has been earnestly desired.
【０００９】この発明は、上述した従来の問題点を解決
するためになされたものにして、シリコン半導体薄膜と
の整合性がよく且つ屈折率の小さい材料を背面電極とシ
リコン半導体薄膜との間に介在させて、光電変換効率の
向上を図るものである。The present invention has been made in order to solve the above-mentioned conventional problems, and a material having good matching with a silicon semiconductor thin film and a small refractive index is provided between the back electrode and the silicon semiconductor thin film. By interposing it, the photoelectric conversion efficiency is improved.
【００１０】[0010]
【課題を解決するための手段】この発明は、光照射によ
り光起電力を発生する半導体層を備え、受光面に相対す
る背面に背面電極が設けられた光起電力素子であって、
前記半導体層と背面電極との間に、周期律表の４族元素
またはその合金で構成される透光性緩衝層を介在させた
ことを特徴とする。SUMMARY OF THE INVENTION The present invention is a photovoltaic element comprising a semiconductor layer for generating a photoelectromotive force by light irradiation, and a back electrode provided on a back surface facing a light receiving surface,
A light-transmitting buffer layer made of a Group 4 element of the periodic table or an alloy thereof is interposed between the semiconductor layer and the back electrode.
【００１１】前記透光性緩衝層は、光波長５００ｎｍに
おける屈折率が２以下にすると良い。The translucent buffer layer preferably has a refractive index of 2 or less at a light wavelength of 500 nm.
【００１２】介在させる透光性緩衝層が光波長５００ｎ
ｍにおける屈折率が２以下であれば、従来の背面電極よ
りも更に高い反射率を得ることができるので、光起電力
素子の短絡電流ひいては光電変換効率を向上させること
ができる。The translucent buffer layer to be interposed has a light wavelength of 500 n
If the refractive index at m is 2 or less, a higher reflectance than that of the conventional back electrode can be obtained, so that the short-circuit current of the photovoltaic element and thus the photoelectric conversion efficiency can be improved.
【００１３】また、この発明は、前記半導体層を、シリ
コンを主成分とする半導体膜で形成することができる。Further, according to the present invention, the semiconductor layer can be formed of a semiconductor film containing silicon as a main component.
【００１４】透光性緩衝層を、シリコンと同じ周期律表
４族元素である元素またはその合金で構成することによ
り、透光性緩衝層がシリコンを主成分とする半導体層と
非常に類似した構造を有することになる。そのため、従
来用いられているＩＴＯやＳｎＯ2等の金属酸化物から
なる透明導電膜に比べて、シリコンを主成分とする半導
体層との整合性が非常によく、両者間の界面特性が良好
になり、光起電力素子の特性が改善される。The transparent buffer layer is made very similar to the semiconductor layer containing silicon as a main component by constituting the transparent buffer layer with an element which is the same as Group 4 element of the periodic table or its alloy. Will have a structure. Therefore, as compared with the conventionally used transparent conductive film made of a metal oxide such as ITO or SnO 2 , the matching property with the semiconductor layer containing silicon as a main component is very good, and the interfacial characteristics between them are excellent. Therefore, the characteristics of the photovoltaic element are improved.
【００１５】前記透光性緩衝層として、ノンドープのダ
イヤモンド様炭素膜を用いると良い。A non-doped diamond-like carbon film may be used as the translucent buffer layer.
【００１６】そして、前記ダイヤモンド様炭素膜の膜中
水素の割合が１０％以上７０％以下に制御すると良い。The proportion of hydrogen in the diamond-like carbon film is preferably controlled to be 10% or more and 70% or less.
【００１７】ダイヤモンド様炭素膜は、シリコンと同じ
周期律表４族元素である炭素を主成分とするため、シリ
コンを主成分とする半導体層とは非常に類似した構造を
持っており、シリコンを主成分とする半導体層との整合
性が非常によく、両者間の界面特性が良好になり、光起
電力素子の特性が改善される。Since the diamond-like carbon film contains carbon, which is an element belonging to Group 4 of the Periodic Table, which is the same as silicon, it has a structure very similar to that of a semiconductor layer containing silicon as a main component. The compatibility with the semiconductor layer as the main component is very good, the interface characteristics between the two are improved, and the characteristics of the photovoltaic element are improved.
【００１８】また、この発明は、前記半導体層が化合物
半導体膜のものでも適用できる。The present invention can also be applied when the semiconductor layer is a compound semiconductor film.
【００１９】[0019]
【発明の実施の形態】以下、この発明の実施の形態につ
き図面を参照して説明する。図１は、この発明の第１の
実施の形態の光起電力素子を示す断面図である。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing a photovoltaic element according to the first embodiment of the present invention.
【００２０】図１に示すように、この発明における光起
電力素子は、ガラス基板１上に膜厚６０００オングスト
ロームのＳｎＯ2からなる透明電極２が設けられてい
る。この透明電極２は半導体薄膜の側に微小な凹凸が形
成されている。この透明電極２上に膜厚１００オングス
トロームのｐ型非晶質シリコンカーバイト（ａ−Ｓｉ
Ｃ）層３、膜厚２５００オングストロームのｉ型非晶質
シリコン（ａ−Ｓｉ）層４、膜厚３００オングストロー
ムのｎ型非晶質シリコン層５、膜厚７００オングストロ
ームの透光性緩衝層としてのノンドープのダイヤモンド
様炭素膜６、銀（Ａｇ）等の高反射材料からなる背面電
極７とが順次積層形成されている。そして、光はガラス
基板１側から入射する。As shown in FIG. 1, in the photovoltaic element according to the present invention, a transparent electrode 2 made of SnO 2 having a film thickness of 6000 Å is provided on a glass substrate 1. The transparent electrode 2 has minute irregularities formed on the semiconductor thin film side. On this transparent electrode 2, p-type amorphous silicon carbide (a-Si) having a film thickness of 100 angstrom is formed.
C) a layer 3, an i-type amorphous silicon (a-Si) layer 4 having a thickness of 2500 Å, an n-type amorphous silicon layer 5 having a thickness of 300 Å, and a translucent buffer layer having a thickness of 700 Å. A non-doped diamond-like carbon film 6 and a back electrode 7 made of a highly reflective material such as silver (Ag) are sequentially laminated. Then, the light enters from the glass substrate 1 side.
【００２１】上記したｐ型ａ−ＳｉＣ層３、ｉ型ａ−Ｓ
ｉ層４、ｎ型ａ−Ｓｉ層５、ノンドープのダイヤモンド
様炭素膜６はそれぞれグロー放電プラズマＣＶＤ法で形
成した。ｐ型ａ−ＳｉＣ層３、ｉ型ａ−Ｓｉ層４、ｎ型
ａ−Ｓｉ層５の形成条件を表１に示し、透光性緩衝層と
してのノンドープのダイヤモンド様炭素膜６の形成条件
を表２に示す。The above-mentioned p-type a-SiC layer 3 and i-type a-S
The i layer 4, the n-type a-Si layer 5, and the non-doped diamond-like carbon film 6 were formed by the glow discharge plasma CVD method. The formation conditions of the p-type a-SiC layer 3, the i-type a-Si layer 4, and the n-type a-Si layer 5 are shown in Table 1, and the formation conditions of the non-doped diamond-like carbon film 6 as the translucent buffer layer are shown. It shows in Table 2.
【００２２】[0022]
【表１】 [Table 1]
【００２３】[0023]
【表２】 [Table 2]
【００２４】ノンドープのダイヤモンド様炭素膜６の屈
折率は、表２のすべてのパラメータに依存するが、この
実施の形態においては、特にＲＦパワーに強く依存し、
ＲＦパワーが大きくなるほど膜の屈折率は増加した。表
３に波長５００ｎｍにおけるノンドープのダイヤモンド
様炭素膜６の屈折率と導電率との関係を示す。また、光
電変換効率は、ノンドープのダイヤモンド様炭素膜６の
屈折率によって、表４のように変化した。尚、屈折率は
自記分光器を用いて測定した。The index of refraction of the non-doped diamond-like carbon film 6 depends on all the parameters in Table 2, but in this embodiment, it particularly depends on the RF power,
The refractive index of the film increased as the RF power increased. Table 3 shows the relationship between the refractive index and the conductivity of the non-doped diamond-like carbon film 6 at a wavelength of 500 nm. Further, the photoelectric conversion efficiency changed as shown in Table 4 depending on the refractive index of the non-doped diamond-like carbon film 6. The refractive index was measured using a self-recording spectroscope.
【００２５】[0025]
【表３】 [Table 3]
【００２６】[0026]
【表４】 [Table 4]
【００２７】表３よりノンドープのダイヤモンド様炭素
膜６は、屈折率が小さくなるほど導電率も小さくなって
いるが、導電率の減少は１桁程度である。また、ノンド
ープのダイヤモンド様炭素膜６の膜厚は７００オングス
トローム程度の膜厚であり、屈折率が小さいノンドープ
のダイヤモンド様炭素膜を用いても光起電力素子の電流
取り出しの損失の影響は少ない。From Table 3, the non-doped diamond-like carbon film 6 has a smaller conductivity as the refractive index becomes smaller, but the decrease in conductivity is about one digit. Further, the thickness of the non-doped diamond-like carbon film 6 is about 700 angstrom, and even if the non-doped diamond-like carbon film having a small refractive index is used, the influence of the current extraction loss of the photovoltaic element is small.
【００２８】上記した表４より、屈折率の小さいダイヤ
モンド様炭素膜を用いるほど、光電変換効率が向上する
ことが分かり、屈折率が２以下の場合には１０％以上の
光電変換効率が得られた。すなわち、介在させるダイヤ
モンド様炭素膜が光波長５００ｎｍにおける屈折率が２
以下であれば、従来の背面電極よりも更に高い反射率を
得ることができるので、光起電力素子の短絡電流ひいて
は光電変換効率を向上させることができる。It can be seen from Table 4 above that the photoelectric conversion efficiency is improved as the diamond-like carbon film having a smaller refractive index is used, and the photoelectric conversion efficiency of 10% or more is obtained when the refractive index is 2 or less. It was That is, the intervening diamond-like carbon film has a refractive index of 2 at a light wavelength of 500 nm.
If it is below, a higher reflectance than that of the conventional back electrode can be obtained, so that the short-circuit current of the photovoltaic element and thus the photoelectric conversion efficiency can be improved.
【００２９】また、この実施の形態において、主に基板
温度変化により、ノンドープのダイヤモンド様炭素膜６
中の水素量も変化させて、光電変換効率との関係を調べ
た。表５にその関係を示す。尚、膜中水素量はＳＩＭＳ
により測定した。Further, in this embodiment, the non-doped diamond-like carbon film 6 is mainly caused by the change in the substrate temperature.
The amount of hydrogen inside was also changed and the relationship with the photoelectric conversion efficiency was investigated. Table 5 shows the relationship. The amount of hydrogen in the film is SIMS.
Was measured by
【００３０】[0030]
【表５】 [Table 5]
【００３１】表５から明らかなように、ノンドープのダ
イヤモンド様炭素膜６の膜中水素量が１０ａｔ％以上７
０ａｔ％以下の場合には、良好な変換効率が得られた。As is clear from Table 5, the amount of hydrogen in the non-doped diamond-like carbon film 6 is 10 at% or more 7
When it was 0 at% or less, good conversion efficiency was obtained.
【００３２】上記した実施の形態においては、半導体層
として、非晶質シリコン系半導体膜を用いた光起電力素
子について説明したが、半導体層として、微結晶シリコ
ンまたは結晶系シリコン半導体膜を用いた光起電力素子
にもこの発明を適用することができる。In the above-mentioned embodiments, the photovoltaic element using the amorphous silicon semiconductor film as the semiconductor layer has been described. However, microcrystalline silicon or crystalline silicon semiconductor film is used as the semiconductor layer. The present invention can also be applied to a photovoltaic element.
【００３３】また、シリコンを主成分とする半導体層５
と背面電極７との間に介在させる透光性緩衝層として、
ここでは、ノンドープのダイヤモンド様炭素膜を用いた
が、炭素以外の他の４族元素、また例えば、炭素量の多
い非晶質カーボンゲルマニウムなどそれらの合金で構成
される層であっても良い。The semiconductor layer 5 containing silicon as a main component
As a translucent buffer layer to be interposed between the back electrode 7 and
Although a non-doped diamond-like carbon film is used here, a layer composed of a Group 4 element other than carbon or an alloy thereof such as amorphous carbon germanium having a large amount of carbon may be used.
【００３４】次に、この発明の第２の実施の形態につき
説明する。図２は、この発明の第２の実施の形態の光起
電力素子を示す断面図である。この第２の実施の形態は
図１に示した実施の形態とはその形成順序が逆であるい
わゆる逆タイプ構造である。Next, a second embodiment of the present invention will be described. FIG. 2 is a sectional view showing a photovoltaic element according to the second embodiment of the present invention. The second embodiment is a so-called reverse type structure in which the order of formation is the reverse of that of the embodiment shown in FIG.
【００３５】図２に示すように、Ａｇ等の背面電極基板
１０上に膜厚７００オングストロームの透光性緩衝層と
してのノンドープのダイヤモンド様炭素膜１１が設けら
れ、このダイヤモンド様炭素膜１１上に、膜厚４００オ
ングストロームのｎ型ａ−Ｓｉ層１２、膜厚２５００オ
ングストロームのｉ型ａ−Ｓｉ層膜１３、膜厚１００オ
ングストロームのｐ型ａ−ＳｉＣ層１４、膜厚７００オ
ングストロームのＩＴＯからなる透明電極１５が、順次
積層形成されている。さらに、透明電極１５上には金属
集電極１６が設けられている。そして、光は透明電極１
５側から入射する。As shown in FIG. 2, a non-doped diamond-like carbon film 11 as a light-transmitting buffer layer having a film thickness of 700 angstrom is provided on the back electrode substrate 10 made of Ag or the like, and on the diamond-like carbon film 11. A transparent 400 angstrom n-type a-Si layer 12, a 2500 angstrom i-type a-Si layer film 13, a 100 angstrom p-type a-SiC layer 14, and a 700 angstrom ITO film. The electrodes 15 are sequentially laminated. Further, a metal collector electrode 16 is provided on the transparent electrode 15. And the light is transparent electrode 1
It is incident from the 5 side.
【００３６】この実施の形態においても、ノンドープの
ダイヤモンド様炭素膜１１は図１の実施例と同様の方法
で形成した。Also in this embodiment, the non-doped diamond-like carbon film 11 is formed by the same method as that of the embodiment shown in FIG.
【００３７】この実施の形態における光電変換効率とノ
ンドープのダイヤモンド様炭素膜１１の光波長５００ｎ
ｍにおける屈折率の関係を表６に示す。The photoelectric conversion efficiency in this embodiment and the light wavelength of the non-doped diamond-like carbon film 11 are 500 n.
Table 6 shows the relationship of the refractive index at m.
【００３８】[0038]
【表６】 [Table 6]
【００３９】図２に示す逆タイプ構造においては、ノン
ドープ様炭素膜挿入による背面側界面特性の向上の効果
のみならず、ダイヤモンド様炭素膜がプラズマ耐性、耐
化学性等に優れているため、光起電力素子形成方法の自
由度が大幅に改善されるので、光電変換効率がより一層
改善される。In the inverted type structure shown in FIG. 2, not only the effect of improving the backside interface characteristics by inserting the non-doped-like carbon film but also the diamond-like carbon film is excellent in plasma resistance, chemical resistance, etc. Since the degree of freedom of the method for forming the electromotive force element is greatly improved, the photoelectric conversion efficiency is further improved.
【００４０】次に、この発明の第３の実施の形態につき
説明する。図３は、この発明の第３の実施の形態の光起
電力素子を示す断面図である。この第３の実施の形態
は、半導体層として化合物半導体を用いたものである。Next, a third embodiment of the present invention will be described. FIG. 3 is a sectional view showing a photovoltaic element according to the third embodiment of the present invention. The third embodiment uses a compound semiconductor as a semiconductor layer.
【００４１】図３に示すように、ガラス基板２０上に膜
厚８０００オングストロームのＭｏからなる背面電極２
１が設けられ、この背面電極２１上に、透光性緩衝層と
して膜厚９００オングストロームのノンドープのダイヤ
モンド様炭素膜２２、膜厚〜３μｍのＣＩＳ（ＣｕＩｎ
Ｓｅ2）層２３、膜厚２００オングストロームのＣｄＳ
層２４、膜厚３０００オングストロームのＺｎＯからな
る透明電極２５が、順次積層形成されている。そして、
光は透明電極２５側から入射する。As shown in FIG. 3, a back electrode 2 made of Mo and having a film thickness of 8000 angstroms is formed on a glass substrate 20.
1, a non-doped diamond-like carbon film 22 having a film thickness of 900 angstrom and a CIS (CuInCu film having a film thickness of 3 μm) are formed on the back electrode 21 as a translucent buffer layer.
Se 2 ) layer 23, 200 Å thick CdS
A layer 24 and a transparent electrode 25 made of ZnO having a film thickness of 3000 angstrom are sequentially laminated. And
Light enters from the transparent electrode 25 side.
【００４２】この実施の形態においても、ノンドープの
ダイヤモンド様炭素膜２２は図１の実施例と同様の方法
で形成した。Also in this embodiment, the non-doped diamond-like carbon film 22 is formed by the same method as that of the embodiment shown in FIG.
【００４３】この実施の形態においても、ノンドープの
ダイヤモンド様炭素膜を半導体層と背面電極との間に介
在させたことによる背面側の界面特性の向上の効果が見
られ、且つ、ダイヤモンド様炭素膜の優れた耐化学性等
により、光起電力素子形成方法の自由度が大幅に改善さ
れるので、光電変換効率が改善される。また、この実施
の形態においても、介在させるダイヤモンド様炭素膜が
光波長５００ｎｍにおける屈折率が２以下であれば、従
来の背面電極よりも更に高い反射率を得ることができる
ので、光起電力素子の短絡電流ひいては光電変換効率を
向上させることができる。Also in this embodiment, the effect of improving the interface characteristics on the back surface side by arranging the non-doped diamond-like carbon film between the semiconductor layer and the back electrode is seen, and the diamond-like carbon film is also present. The excellent chemical resistance and the like greatly improve the degree of freedom in the method for forming a photovoltaic element, and thus improve the photoelectric conversion efficiency. Also in this embodiment, if the interposing diamond-like carbon film has a refractive index of 2 or less at a light wavelength of 500 nm, a higher reflectance than that of the conventional back electrode can be obtained. It is possible to improve the short-circuit current and thus the photoelectric conversion efficiency.
【００４４】[0044]
【発明の効果】以上説明したように、この発明は、透光
性緩衝層を、シリコンと同じ周期律表４族元素である元
素またはその合金で構成することにより、透光性緩衝層
がシリコンを主成分とする半導体層と非常に類似した構
造を有することになる。そのため、従来用いられている
ＩＴＯやＳｎＯ2等の金属酸化物からなる透明導電膜に
比べて、シリコンを主成分とする半導体層との整合性が
非常によく、両者間の界面特性が良好になり、光起電力
素子の特性が改善される。As described above, according to the present invention, the translucent buffer layer is made of the element which is the same Group 4 element of the periodic table as silicon or its alloy, so that the translucent buffer layer is made of silicon. It has a structure very similar to that of the semiconductor layer containing as a main component. Therefore, as compared with the conventionally used transparent conductive film made of a metal oxide such as ITO or SnO 2 , the matching property with the semiconductor layer containing silicon as a main component is very good, and the interfacial characteristics between them are excellent. Therefore, the characteristics of the photovoltaic element are improved.
【００４５】また、介在させる透光性緩衝層が光波長５
００ｎｍにおける屈折率が２以下であれば、従来の背面
電極よりも更に高い反射率を得ることができるので、光
起電力素子の短絡電流ひいては光電変換効率を向上させ
ることができる。Further, the translucent buffer layer to be interposed has an optical wavelength of 5
If the refractive index at 00 nm is 2 or less, a higher reflectance than that of the conventional back electrode can be obtained, so that the short-circuit current of the photovoltaic element and thus the photoelectric conversion efficiency can be improved.
【図１】この発明の第１の実施の形態の光起電力素子を
示す断面図である。FIG. 1 is a cross-sectional view showing a photovoltaic element according to a first embodiment of the present invention.
【図２】この発明の第２の実施の形態の光起電力素子を
示す断面図である。FIG. 2 is a sectional view showing a photovoltaic element according to a second embodiment of the present invention.
【図３】この発明の第３の実施の形態の光起電力素子を
示す断面図である。FIG. 3 is a sectional view showing a photovoltaic element according to a third embodiment of the present invention.
１ ガラス基板 ２ 透明電極 ３ ｐ型ａ−ＳｉＣ層 ４ ｉ型ａ−Ｓｉ層 ５ ｎ型ａ−Ｓｉ層 ６ ノンドープのダイヤモンド様炭素膜（透光性緩衝
層） ７ 背面電極1 glass substrate 2 transparent electrode 3 p-type a-SiC layer 4 i-type a-Si layer 5 n-type a-Si layer 6 non-doped diamond-like carbon film (translucent buffer layer) 7 back electrode
Claims (6)
層を備え、受光面に相対する背面に背面電極が設けられ
た光起電力素子であって、前記半導体層と背面電極との
間に、周期律表の４族元素またはその合金で構成される
透光性緩衝層を介在させたことを特徴とする光起電力素
子。1. A photovoltaic element comprising a semiconductor layer for generating a photoelectromotive force by light irradiation, and a back electrode provided on a back surface facing a light receiving surface, the photovoltaic element being between the semiconductor layer and the back electrode. A photovoltaic element comprising a translucent buffer layer made of a Group 4 element of the periodic table or an alloy thereof.
半導体膜で形成されていることを特徴とする請求項１に
記載の光起電力素子。2. The photovoltaic element according to claim 1, wherein the semiconductor layer is formed of a semiconductor film containing silicon as a main component.
れていることを特徴とする請求項１に記載の光起電力素
子。3. The photovoltaic element according to claim 1, wherein the semiconductor layer is formed of a compound semiconductor film.
における屈折率が２以下であることを特徴とする請求項
１に記載の光起電力素子。4. The light-transmitting buffer layer has an optical wavelength of 500 nm.
The photovoltaic element according to claim 1, wherein the refractive index in is less than or equal to 2.
素膜であることを特徴とする請求項１に記載の光起電力
素子。5. The photovoltaic element according to claim 1, wherein the translucent buffer layer is a diamond-like carbon film.
割合が１０％以上７０％以下であることを特徴とする請
求項５に記載の光起電力素子。6. The photovoltaic element according to claim 5, wherein the proportion of hydrogen in the diamond-like carbon film is 10% or more and 70% or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25624395A JP3342257B2 (en) | 1995-10-03 | 1995-10-03 | Photovoltaic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25624395A JP3342257B2 (en) | 1995-10-03 | 1995-10-03 | Photovoltaic element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09102623A true JPH09102623A (en) | 1997-04-15 |
| JP3342257B2 JP3342257B2 (en) | 2002-11-05 |
Family
ID=17289932
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25624395A Expired - Fee Related JP3342257B2 (en) | 1995-10-03 | 1995-10-03 | Photovoltaic element |
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| Country | Link |
|---|---|
| JP (1) | JP3342257B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009117463A (en) * | 2007-11-02 | 2009-05-28 | Kaneka Corp | Thin-film photoelectric conversion device |
| JP2009147172A (en) * | 2007-12-14 | 2009-07-02 | Kaneka Corp | Multi-junction silicon thin-film photoelectric converter |
| JP2009193673A (en) * | 2008-02-12 | 2009-08-27 | Kaneka Corp | Method for manufacturing transparent conductive film |
| JP2009231781A (en) * | 2008-03-25 | 2009-10-08 | Kaneka Corp | Multijunction silicon thin film photoelectric converter |
| JP2010087205A (en) * | 2008-09-30 | 2010-04-15 | Kaneka Corp | Multi-junction thin-film photoelectric converter |
| CN101937949A (en) * | 2010-07-28 | 2011-01-05 | 河北东旭投资集团有限公司 | Method for improving conversion efficiency of amorphous silicon solar cell |
| US20110073176A1 (en) * | 2009-09-29 | 2011-03-31 | Samsung Electronics Co., Ltd. | Solar cell and method for manufacturing the same |
-
1995
- 1995-10-03 JP JP25624395A patent/JP3342257B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009117463A (en) * | 2007-11-02 | 2009-05-28 | Kaneka Corp | Thin-film photoelectric conversion device |
| JP2009147172A (en) * | 2007-12-14 | 2009-07-02 | Kaneka Corp | Multi-junction silicon thin-film photoelectric converter |
| JP2009193673A (en) * | 2008-02-12 | 2009-08-27 | Kaneka Corp | Method for manufacturing transparent conductive film |
| JP2009231781A (en) * | 2008-03-25 | 2009-10-08 | Kaneka Corp | Multijunction silicon thin film photoelectric converter |
| JP2010087205A (en) * | 2008-09-30 | 2010-04-15 | Kaneka Corp | Multi-junction thin-film photoelectric converter |
| US20110073176A1 (en) * | 2009-09-29 | 2011-03-31 | Samsung Electronics Co., Ltd. | Solar cell and method for manufacturing the same |
| CN101937949A (en) * | 2010-07-28 | 2011-01-05 | 河北东旭投资集团有限公司 | Method for improving conversion efficiency of amorphous silicon solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3342257B2 (en) | 2002-11-05 |
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