JPH0888214A - Microwave plasma apparatus - Google Patents

Abstract

PURPOSE: To provide a microwave plasma apparatus which can make etching at a uniform speed and can obtain an anisotropic shape. CONSTITUTION: A microwave plasma apparatus is provided with a plasma generating chamber 10 to which a processing gas is supplied and the inside of which is maintained at a prescribed pressure, waveguide 17 equipped with a microwave generating source 18 which introduces microwave to the chamber 10, and evacuating mechanism 16 which maintains the inside of the chamber 10 in a reduced-pressure state.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus and a semiconductor device manufacturing process, and more particularly to a CVD and dry etching apparatus.

[0002]

2. Description of the Related Art A conventional technique is disclosed in, for example, JP-A-64-4.
No. 7029 and Japanese Patent Laid-Open No. 64-47030, an annular nozzle is inserted into the watching chamber to supply an etching gas onto the wafer to improve the uniformity of the etching rate. For example, an etching gas is introduced into each sample chamber to improve the etching shape.

[0003]

The above-mentioned prior art does not give sufficient consideration to the occurrence of side etching and the control of the etching shape.

In terms of etching characteristics, the etching rate, uniformity, selectivity to mask material, shape, etc. occupy important positions in terms of performance.

An object of the present invention is to provide a plasma processing apparatus capable of improving the uniformity of shape and etching rate.

[0006]

In order to achieve the above object, the etching gas is dispersed and introduced into the reaction chamber to improve the uniformity of the etching rate, and at the same time, the optimum gas introduction position for the amount of material to be etched. Is selected to obtain an anisotropic shape. That is, in order to improve the uniformity of the etching rate, the etching gas can be dispersed and introduced into the reaction chamber to make the etching gas flow uniform.

Regarding the shape, an anisotropic shape is obtained by selecting an optimum gas introduction position for the material to be etched.

For example, in aluminum etching which greatly depends on the gas flow, side etching tends to occur by introducing a gas from above. In such a case, it is improved by reducing the gas flow rate, but in the case of the laminated structure wafer, the shape of the barrier metal material under the aluminum layer, the etching characteristics, etc. are affected. In this case, by changing the gas introduction position, the gas replacement rate on the wafer can be changed and shape control can be performed.

[0009]

By providing a plurality of processing gas inlet positions to be introduced into the vacuum chamber, the etching gas can be dispersed to make the flow uniform.

By selecting a plurality of processing gas inlet positions to be introduced into the vacuum chamber and introducing the gas, optimum conditions for the material to be etched can be provided.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. FIG. 1 shows the structure of a microwave plasma etching apparatus. 2 and 3 show an example in which etching is performed using a microwave plasma etching apparatus.

In FIG. 1, an introduction window 14 made of quartz is provided above the processing chamber 10 to form a vacuum processing chamber. The processing chamber 10 is provided with a gas supply port 15 connected to a gas supply source (not shown) for supplying etching and cleaning gas into the vacuum processing chamber. The gas supply port 15 is
It is divided into a plurality of process gas inlets 20 introduced into the vacuum chamber. It is also possible to provide a quartz plate having a hole below the introduction window 14 made of quartz, flow a gas between the introduction window 14 and the quartz plate, and introduce the processing gas from the upper part of the vacuum processing chamber. An on-off valve 21 is attached to each of the plurality of process gas inlets so that each gas inlet can be selected. Further, an exhaust port 16 connected to a vacuum exhaust device (not shown) is provided. The processing chamber 10 is provided with a sample table 11 on which a wafer 13 as a material to be etched is placed. A high frequency power source 12 is connected to the sample stage 11 and high frequency power can be applied to the sample stage 11. A waveguide 17 is provided outside the introduction window 14 so as to surround the introduction window 14, and further,
A solenoid coil 19 for generating a magnetic field is provided inside the introduction window 14 on the outer side. A magnetron 18 that oscillates microwaves is provided at the end of the waveguide 17.

In the apparatus having such a structure, the etching processing gas is supplied into the vacuum processing chamber through the plurality of processing gas introducing ports 20 which are introduced into the vacuum chamber from the gas supply port 15, and the inside of the vacuum processing chamber is predetermined. The pressure is reduced and exhausted, the microwave from the magnetron 18 is introduced into the discharge tube 10 by the waveguide 17, and the magnetic field is formed by the solenoid coil 19, and the action of the electric field of the microwave and the magnetic field by the solenoid coil 19 is exerted. The processing gas in the introduction window 14 is turned into plasma by. Further, a high frequency power is applied to the sample stage 11 by a high frequency power source 12 to generate a bias voltage, and ions in the plasma are removed from the wafer 13.
The side is made to be pulled in and anisotropically etched.

When a wafer is processed by using the apparatus shown in FIG. 1, in the conventional structure in which gas is introduced from the upper side, side etching is likely to occur as shown in FIG. At this time, only the necessary pipes are selected from the plurality of processing gas inlets 20 introduced into the vacuum chamber from the gas supply port 15 to supply the etching processing gas into the vacuum processing chamber. By stopping the introduction of the gas from the upper part and introducing the gas from the side wall, the gas replacement on the wafer surface becomes longer, and the amount of side wall deposits on the side wall of the processed surface increases. Less etching is achieved.

[0015]

According to the present invention, the etching rate is uniform and an anisotropic shape can be obtained.

[Brief description of drawings]

FIG. 1 is a vertical sectional view showing a microwave plasma processing apparatus according to an embodiment of the present invention.

FIG. 2 is an explanatory diagram in which etching is performed using a microwave plasma etching apparatus.

FIG. 3 is an explanatory diagram in which etching is performed using a microwave plasma etching apparatus.

[Explanation of symbols]

10 ... Vacuum processing chamber, 11 ... Electrode, 12 ... High frequency power source, 1
3 ... Wafer, 14 ... Discharge tube, 15 ... Gas inlet, 16 ...
Exhaust port, 17 ... Waveguide, 18 ... Magnetron, 19 ... Solenoid coil, 20 ... Processing gas inlet, 21 ... Open / close valve.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI Technical indication H05H 1/46 C 9216-2G

Claims (3)

[Claims] 1. A plasma generation chamber in which a processing gas is supplied and a predetermined pressure is maintained, and a waveguide having a microwave generation source for introducing a microwave into the plasma generation chamber,
A microwave plasma apparatus comprising: an exhaust mechanism for keeping the plasma generation chamber in a depressurized state; and a plurality of processing gas ports introduced into the vacuum chamber when the sample is processed using the plasma. 2. The microwave plasma device according to claim 1, wherein a gas can be introduced by selecting a plurality of processing gas inlet positions to be introduced into the vacuum chamber. 3. The microwave plasma apparatus according to claim 1, wherein a gas can be introduced into the material to be processed by selecting a plurality of processing gas port positions to be introduced into the vacuum chamber. apparatus.