JPH0884040A - Method for manufacturing piezoelectric resonator - Google Patents
Method for manufacturing piezoelectric resonatorInfo
- Publication number
- JPH0884040A JPH0884040A JP21608994A JP21608994A JPH0884040A JP H0884040 A JPH0884040 A JP H0884040A JP 21608994 A JP21608994 A JP 21608994A JP 21608994 A JP21608994 A JP 21608994A JP H0884040 A JPH0884040 A JP H0884040A
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric substrate
- board thickness
- laser beam
- laser
- laser beams
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、圧電共振子、特に発振
回路やフィルタ回路等に使用される圧電共振子の製造方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a piezoelectric resonator, and more particularly to a method for manufacturing a piezoelectric resonator used in an oscillation circuit, a filter circuit or the like.
【０００２】[0002]
【従来の技術と課題】ＭＨｚ帯域で使用される圧電共振
子のうち、厚み振動モードで振動する圧電共振子は圧電
体基板の板厚を薄くする必要がある。そこで、圧電共振
子の機械的強度を十分なものにするべく、振動電極を設
ける部分及びその近傍のみを薄くした構造が採用されて
いる。2. Description of the Related Art Among piezoelectric resonators used in the MHz band, a piezoelectric resonator vibrating in a thickness vibration mode requires a thin piezoelectric substrate. Therefore, in order to make the mechanical strength of the piezoelectric resonator sufficient, a structure is adopted in which only the portion where the vibrating electrode is provided and its vicinity are thinned.
【０００３】通常、このような板厚の異なる圧電体基板
を製作する場合、エッチング法が採られる。エッチング
法は、所定の部分をレジスト膜にて被覆した圧電体基板
をエッチング液に浸漬し、レジスト膜から露出した部分
のみをエッチングしてその部分の板厚を薄くする方法で
ある。ところが、この方法はエッチング量のコントロー
ルが困難であり、部分的に板厚の薄い圧電体基板を精度
良く製作することがむずかしかった。特に、ＰＺＴ等の
セラミックス多結晶材料からなる圧電体基板の場合に
は、圧電体基板自体がエッチング液に浸され圧電特性が
劣化するという問題もあった。Generally, an etching method is used to manufacture such piezoelectric substrates having different plate thicknesses. The etching method is a method in which a piezoelectric substrate having a predetermined portion covered with a resist film is immersed in an etching solution, and only the portion exposed from the resist film is etched to reduce the plate thickness of that portion. However, in this method, it is difficult to control the etching amount, and it is difficult to manufacture a piezoelectric substrate having a thin plate portion with high accuracy. In particular, in the case of a piezoelectric substrate made of a ceramic polycrystalline material such as PZT, there is also a problem that the piezoelectric substrate itself is immersed in an etching solution and the piezoelectric characteristics deteriorate.
【０００４】そこで、本発明の課題は、圧電体基板に板
厚の薄い部分を寸法精度良く形成することができる圧電
共振子の製造方法を提供することにある。Therefore, an object of the present invention is to provide a method of manufacturing a piezoelectric resonator which can form a thin plate portion on a piezoelectric substrate with high dimensional accuracy.
【０００５】[0005]
【課題を解決するための手段と作用】以上の課題を解決
するため、本発明に係る圧電共振子の製造方法は、
（ａ）圧電体基板に加工用レーザビームを照射し、所定
の部分をラッピングしてこの部分の板厚を薄くする工程
と、（ｂ）前記圧電体基板の所定の部分に板厚測定用レ
ーザビームを照射し、前記所定の部分から反射した板厚
測定用レーザビームを検出して圧電体基板の板厚を測定
する工程と、（ｃ）前記圧電体基板の板厚が薄い部分の
表裏面に振動電極を設ける工程と、を備えたことを特徴
とする。ここに、加工用レーザビームでラッピングする
とは、加工用レーザビームのエネルギーによって圧電体
基板の所定の部分を溶解又はエッチング又は分解するこ
とを意味する。In order to solve the above problems, the method for manufacturing a piezoelectric resonator according to the present invention is
(A) a step of irradiating the piezoelectric substrate with a processing laser beam and lapping a predetermined portion to reduce the thickness of this portion; and (b) a predetermined portion of the piezoelectric substrate having a thickness measuring laser. Irradiating a beam and detecting a plate thickness measuring laser beam reflected from the predetermined part to measure the plate thickness of the piezoelectric substrate, and (c) the front and back surfaces of the thin part of the piezoelectric substrate. And a step of providing a vibrating electrode. Here, lapping with the processing laser beam means that a predetermined portion of the piezoelectric substrate is melted, etched or decomposed by the energy of the processing laser beam.
【０００６】以上の方法により、加工用レーザビームは
その強度や照射時間を電気的に精度良くコントロールさ
れ、部分的に板厚の薄い圧電体基板が精度良く製作され
る。そして、レーザビームは圧電体基板に機械的ストレ
スを加えることなく、ラッピング加工を行なう。また、
圧電体基板から反射した板厚測定用レーザビームを検出
して圧電体基板の板厚を確認しつつ、ラッピング加工を
行うため、効率良く板厚の薄い部分を形成することがで
きる。By the above method, the intensity and irradiation time of the processing laser beam are electrically controlled with high precision, and a piezoelectric substrate having a partially thin plate is produced with high precision. Then, the laser beam performs lapping without applying mechanical stress to the piezoelectric substrate. Also,
Since the lapping process is performed while the plate thickness of the piezoelectric substrate is confirmed by detecting the plate thickness measuring laser beam reflected from the piezoelectric substrate, it is possible to efficiently form a thin portion.
【０００７】[0007]
【実施例】以下、本発明に係る圧電共振子の製造方法の
一実施例について添付図面を参照して説明する。本実施
例では単品状態で製造した場合について説明するが、複
数の圧電共振子を備えたマザー基板を利用して量産に適
した方法で製造してもよいことは言うまでもない。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a method for manufacturing a piezoelectric resonator according to the present invention will be described below with reference to the accompanying drawings. In the present embodiment, the case where a single product is manufactured will be described, but it goes without saying that a mother substrate provided with a plurality of piezoelectric resonators may be used to manufacture by a method suitable for mass production.
【０００８】図１に示すように、圧電体基板１の所定の
部分、すなわち、後述の振動電極３，４が設けられる部
分及びその近傍部分を加工用レーザビームＬ１にて掃引
する。圧電体基板１の材料としては、ＰＺＴ等のセラミ
ックス多結晶材料や水晶、ＬｉＴａＯ3等の単結晶材料
が使用される。加工用レーザとしては、Ｈｅ−Ｎｅレー
ザ、ＣＯ2レーザ、Ａｒイオンレーザ、Ｋｒイオンレー
ザ、Ｘｅレーザ、エキシマレーザ等のガスレーザ、ある
いはルビーレーザ、ＹＡＧレーザ等の固体レーザが使用
される。加工用レーザビームＬ１にて掃引された部分
は、機械的ストレスなくラッピングされる。すなわち、
その部分は溶融又はエッチング又は分解されて板厚が薄
くなる。そして、図２に示すように圧電体基板１に凹部
２が形成される。As shown in FIG. 1, a predetermined portion of the piezoelectric substrate 1, that is, a portion where vibrating electrodes 3 and 4, which will be described later, are provided and a portion in the vicinity thereof are swept with a processing laser beam L1. As the material of the piezoelectric substrate 1, a ceramic polycrystalline material such as PZT, quartz, or a single crystal material such as LiTaO 3 is used. As the processing laser, a gas laser such as a He—Ne laser, a CO 2 laser, an Ar ion laser, a Kr ion laser, a Xe laser, an excimer laser, or a solid laser such as a ruby laser or a YAG laser is used. The portion swept by the processing laser beam L1 is lapped without mechanical stress. That is,
The portion is melted, etched or decomposed to reduce the plate thickness. Then, as shown in FIG. 2, the concave portion 2 is formed in the piezoelectric substrate 1.
【０００９】加工用レーザビームＬ１は複数種類のもの
を組み合わせてもよい。例えば、エネルギーが大きいＣ
Ｏ2レーザで圧電体基板を加工して加工面に熱変性層が
形成された場合、熱変性層が殆んど形成されないエキシ
マレーザで粗加工面の熱変性層を溶融、分解して除去す
る方法を採用してもよい。あるいは、ＫＯＨ水溶液や純
水中又はＣｌ2ガスやＨＣｌガス中にセットされた圧電
体基板にＹＡＧレーザ又はＣＯ2レーザのビームを照射
し、圧電体基板の所定の部分をエッチングして薄くする
方法（レーザアシストエッチング法）を採用してもよ
い。The processing laser beam L1 may be a combination of a plurality of types. For example, C with high energy
When the heat-modified layer is formed on the processed surface by processing the piezoelectric substrate with the O 2 laser, the heat-modified layer on the rough-processed surface is melted, decomposed and removed by the excimer laser in which the heat-modified layer is hardly formed. A method may be adopted. Alternatively, a method of irradiating a piezoelectric substrate set in a KOH aqueous solution, pure water, or Cl 2 gas or HCl gas with a beam of a YAG laser or a CO 2 laser to etch a predetermined portion of the piezoelectric substrate to make it thin (Laser assisted etching method) may be adopted.
【００１０】次に、図３に示すように、板厚測定用レー
ザビームＬ２を凹部２に照射し、反射して戻ったビーム
Ｌ２を検出して凹部２の板厚を測定する。板厚測定用レ
ーザとしては、前記加工用レーザのビーム強度を弱める
ことによって加工用レーザを兼用してもよいし、別にエ
ネルギーの極めて小さい半導体レーザ、例えばＧａＡｓ
レーザを設けてもよい。Next, as shown in FIG. 3, the plate thickness measuring laser beam L2 is applied to the recess 2, and the beam L2 reflected and returned is detected to measure the plate thickness of the recess 2. As the plate thickness measuring laser, the processing laser may be also used by weakening the beam intensity of the processing laser, or a semiconductor laser having extremely small energy such as GaAs.
A laser may be provided.
【００１１】凹部２の板厚が所望の寸法より大きけれ
ば、この測定データに基づいて、加工用レーザビームＬ
１の照射時間、強度、掃引スピード（さらに、加工用レ
ーザビームＬ１がパルス状のものである場合はパルス周
波数）等を調整する加工データを作る。そして、この作
った加工データに基づいて加工用レーザビームＬ１にて
凹部２をラッピングする。加工用レーザビームＬ１の照
射時間や強度パルス周波数掃引スピード等は電気的に精
度良くコントロールできるので、凹部２の仕上がり寸法
は極めて精度が良くなる。また、圧電体基板１の凹部２
の板厚をリアルタイムに確認しつつ、ラッピング加工を
行なうため、効率良く圧電体基板１の加工が行なわれ
る。If the plate thickness of the recess 2 is larger than the desired size, the processing laser beam L is based on this measurement data.
Processing data for adjusting the irradiation time, the intensity, the sweep speed (further, the pulse frequency when the processing laser beam L1 is pulsed), and the like are created. Then, the recess 2 is lapped by the processing laser beam L1 based on the created processing data. Since the irradiation time of the processing laser beam L1 and the intensity pulse frequency sweep speed can be electrically controlled with high accuracy, the finished dimension of the recess 2 becomes extremely accurate. In addition, the concave portion 2 of the piezoelectric substrate 1
Since the lapping process is performed while confirming the plate thickness of No. 2 in real time, the piezoelectric substrate 1 is efficiently processed.
【００１２】こうして、レーザビームＬ１，Ｌ２による
加工、測定を繰り返して所望の板厚寸法に仕上げた圧電
体基板１の表裏面に、図４に示すように、振動電極３，
４を設ける。振動電極３はその一部を延在して圧電体基
板１の右縁部に設けた引出し電極５に電気的に接続して
いる。振動電極４はその一部が延在して圧電体基板１の
左縁部に設けた引出し電極６に電気的に接続している。
これらの電極３〜６はＡｕ，Ａｇ，Ｃｕ，Ｎｉ，Ｐｄ及
びその合金等のスパッタリング、蒸着、めっき、スプレ
ー等の手段にて形成される。こうして得られた圧電共振
子８は厚み振動モードで振動し、その共振周波数はＭＨ
ｚ帯域にある。In this way, as shown in FIG. 4, the vibrating electrodes 3, 3 are formed on the front and back surfaces of the piezoelectric substrate 1 having the desired plate thickness dimension by repeating the processing and measurement by the laser beams L1, L2.
4 is provided. The vibrating electrode 3 extends partly and is electrically connected to the extraction electrode 5 provided on the right edge portion of the piezoelectric substrate 1. A part of the vibrating electrode 4 extends and is electrically connected to a lead electrode 6 provided on the left edge of the piezoelectric substrate 1.
These electrodes 3 to 6 are formed by means of sputtering, vapor deposition, plating, spraying or the like of Au, Ag, Cu, Ni, Pd and alloys thereof. The piezoelectric resonator 8 thus obtained vibrates in the thickness vibration mode, and its resonance frequency is MH.
in the z band.
【００１３】なお、本発明に係る圧電共振子の製造方法
は前記実施例に限定するものではなく、その要旨の範囲
内で種々に変形することができる。板厚の薄い部分は平
面である必要はなく、凹凸のある複雑な面を構成してい
てもよい。この場合、レーザビームの照射時間や強度を
調整することにより凹凸のある面を形成することができ
る。また、スポット状に加工する場合は、前記実施例の
ように、加工用及び測定用レーザビームを掃引せず、そ
のポイントのみを加工、測定する。The method of manufacturing the piezoelectric resonator according to the present invention is not limited to the above embodiment, but can be variously modified within the scope of the gist thereof. The thin plate portion does not have to be a flat surface, and may have a complicated surface having irregularities. In this case, an uneven surface can be formed by adjusting the irradiation time and intensity of the laser beam. Further, in the case of processing in a spot shape, unlike the above-described embodiment, the processing and measuring laser beams are not swept, and only that point is processed and measured.
【００１４】[0014]
【発明の効果】以上の説明で明らかなように、本発明に
よれば、板厚測定用レーザビームを圧電体基板に照射し
て所定の部分の板厚を測定して確認しつつ、加工用レー
ザビームをこの所定の部分に照射してラッピングして薄
くしたので、圧電体基板に板厚の薄い部分を寸法精度良
くかつ効率良く形成することができる。As is apparent from the above description, according to the present invention, it is possible to irradiate a piezoelectric substrate with a laser beam for plate thickness measurement to measure and confirm the plate thickness of a predetermined portion for processing. Since the predetermined portion is irradiated with the laser beam and lapped to be thinned, the thin portion can be formed on the piezoelectric substrate with high dimensional accuracy and efficiency.
【図１】本発明に係る圧電共振子の製造方法の一実施例
を示す斜視図。FIG. 1 is a perspective view showing an embodiment of a method of manufacturing a piezoelectric resonator according to the present invention.
【図２】加工用レーザビームを説明するための断面図。FIG. 2 is a cross-sectional view for explaining a processing laser beam.
【図３】測定用レーザビームを説明するための断面図。FIG. 3 is a sectional view for explaining a measurement laser beam.
【図４】圧電共振子の外観を示す斜視図。FIG. 4 is a perspective view showing the external appearance of a piezoelectric resonator.
１…圧電体基板 ２…凹部 ３，４…振動電極 ８…圧電共振子 Ｌ１…加工用レーザビーム Ｌ２…板厚測定用レーザビーム DESCRIPTION OF SYMBOLS 1 ... Piezoelectric substrate 2 ... Recessed parts 3, 4 ... Oscillating electrode 8 ... Piezoelectric resonator L1 ... Laser beam for processing L2 ... Laser beam for plate thickness measurement
Claims (1)
し、所定の部分をラッピングしてこの部分の板厚を薄く
する工程と、 前記圧電体基板の所定の部分に板厚測定用レーザビーム
を照射し、前記所定の部分から反射した板厚測定用レー
ザビームを検出して圧電体基板の板厚を測定する工程
と、 前記圧電体基板の板厚が薄い部分の表裏面に振動電極を
設ける工程と、 を備えたことを特徴とする圧電共振子の製造方法。1. A step of irradiating a piezoelectric substrate with a processing laser beam and lapping a predetermined portion to reduce the plate thickness of this portion; and a plate thickness measuring laser beam on the predetermined portion of the piezoelectric substrate. And a step of measuring the plate thickness of the piezoelectric substrate by detecting a plate thickness measuring laser beam reflected from the predetermined portion, and vibrating electrodes on the front and back surfaces of the thin portion of the piezoelectric substrate. A method of manufacturing a piezoelectric resonator, comprising: a step of providing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21608994A JP3351119B2 (en) | 1994-09-09 | 1994-09-09 | Manufacturing method of piezoelectric resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21608994A JP3351119B2 (en) | 1994-09-09 | 1994-09-09 | Manufacturing method of piezoelectric resonator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0884040A true JPH0884040A (en) | 1996-03-26 |
| JP3351119B2 JP3351119B2 (en) | 2002-11-25 |
Family
ID=16683081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21608994A Expired - Lifetime JP3351119B2 (en) | 1994-09-09 | 1994-09-09 | Manufacturing method of piezoelectric resonator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3351119B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7518294B2 (en) | 2004-05-21 | 2009-04-14 | Seiko Epson Corporation | Manufacturing method of quartz crystal resonator, apparatus therefor, and quartz crystal resonator manufactured thereby |
| JP2010034712A (en) * | 2008-07-25 | 2010-02-12 | Citizen Finetech Miyota Co Ltd | Method for manufacturing crystal element |
-
1994
- 1994-09-09 JP JP21608994A patent/JP3351119B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7518294B2 (en) | 2004-05-21 | 2009-04-14 | Seiko Epson Corporation | Manufacturing method of quartz crystal resonator, apparatus therefor, and quartz crystal resonator manufactured thereby |
| JP2010034712A (en) * | 2008-07-25 | 2010-02-12 | Citizen Finetech Miyota Co Ltd | Method for manufacturing crystal element |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3351119B2 (en) | 2002-11-25 |
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