JPH088319A - Board transfer mechanism, board transfer system and semiconductor production system - Google Patents

Abstract

PURPOSE:To prevent erroneous transfer of a board or production of particles due to static electricity by providing an antistatic or a neutralization mechanism partially or entirely for a substrate, a substrate holder, a support for transferring the substrate, a substrate holder storage space, etc. CONSTITUTION:In a substrate transfer mechanism 1, an antistatic or a neutralization mechanism 6 is provided partially or entirely for a substrate 2, substrate holders 3, 4, a support 5 for transferring the substrate, a substrate holder storage space 11, etc. When the substrate 2 is transferred from one substrate holder 4 to the other substrate holder 3, for example, electrostatic interference between the substrate 2 and the support 5 is suppressed and erroneous transfer is prevented. Production of particles due to friction or collision between the substrate 2 and the supporting part of the substrate holder 3, caused by interference between the substrate 2 and the support 5, can also be prevented. Furthermore, the substrate 2 can be protected against contamination due to electrostatic attraction of particles floating in the vicinity thereof.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate transfer mechanism, a substrate transfer apparatus equipped with this substrate transfer mechanism, and a semiconductor manufacturing apparatus equipped with this substrate transfer mechanism.

[0002]

2. Description of the Related Art In manufacturing a semiconductor device, for example, a semiconductor substrate (so-called semiconductor wafer) is usually installed in a storage tool (so-called carrier) made of polypropylene, Teflon or the like, and each process is performed in that state. To move between
It is stored for a certain period of time. In each process or each manufacturing apparatus, when performing some kind of processing, it is transferred to a predetermined storage tool used in each (for example, carrier, quartz boat, etc.), or the storage tool for transfer is directly installed in the apparatus,
A semiconductor substrate is moved to a processing chamber (also defined as transfer in a broad sense). Of course, there is also transfer between transfer storage devices.

As described above, when a semiconductor substrate is transferred, the semiconductor substrate is usually moved from one storage device to another storage device or a processing chamber by using some kind of substrate support. Conventionally, a supporting tool using vacuum suction has been often used to support a semiconductor substrate. However, in the case of vacuum suction, although the support can be supported relatively firmly, the support and the semiconductor substrate are in strong contact with each other, so that there is a problem that particles are often generated due to friction between the substrate and the support at the contact portion.

The generation of such particles is usually
It has been overlooked because it occurs on the back surface of a semiconductor substrate on which no element is formed. However, in recent years, it has been shown that these particles are highly likely to be transferred and contaminated on the surface of the semiconductor substrate arranged next to each other.

Further, in manufacturing finer elements, the manufacturing apparatus and the manufacturing environment are being cleaned, and the generation and adhesion of particles cannot be ignored even on the back surface. Further, in the vacuum suction method, when the supply of the vacuum is stopped, the semiconductor substrate cannot be supported and may drop and be damaged.

Under the above circumstances, a support tool for holding a semiconductor substrate only by mounting it without using vacuum suction has begun to be used. In that case, a relatively large support is required to stably hold the semiconductor substrate. Further, the diameter of the semiconductor substrate itself is also increasing, and is becoming larger.

On the other hand, in a storage tool for semiconductor substrates, almost no metal is used in order to avoid contamination, and a polymer material such as polypropylene or Teflon is used for ease of processing. These are very easily charged, and the semiconductor substrates stored in them are charged as well.

If the semiconductor substrate is transferred in such a situation, the following problems occur. A case where a semiconductor substrate is transferred from one storage device to another storage device will be described as an example. Since the semiconductor substrate is held only by placing it without vacuum suction, both the storage tool A and the other storage tool B are structured to horizontally hold the semiconductor substrate. Usually, it is supported around the semiconductor substrate and is opened in a predetermined direction for transfer.

After the transfer support tool is inserted just below (several millimeters below) the semiconductor substrate to be transferred, which is installed in one storage tool A, the transfer support tool is slightly raised and the semiconductor substrate is lifted and held. To do. With the semiconductor substrate held, the transfer support 1
Remove from storage tool A. While holding the semiconductor substrate,
The transfer support tool is inserted into a predetermined position of another storage tool B,
A little descend. At this time, the semiconductor substrate is stored in another storage device B.
Is held by the substrate supporting part of and is separated from the transfer supporting tool. Then, the transfer support tool is pulled out from the other storage tool B.

This completes the transfer of the semiconductor substrate 1 from the storage tool A to another storage tool B, but a problem occurs when the transfer support tool is finally removed from the other storage tool B. If the semiconductor substrate or the like is charged, the transfer support and the semiconductor substrate attract each other due to the Coulomb force due to static electricity, and the semiconductor substrate vibrates in the form of being caught by the transfer support. The semiconductor substrate falls off from the substrate supporting portion of the storage tool B and falls. Further, the vibration may generate particles due to friction between the semiconductor substrate and the substrate supporting portion of the storage tool B, for example.

[0011]

In view of the above points, the present invention is to transfer a substrate from one substrate storage device to another substrate storage device, or a substrate between the substrate storage device and the processing chamber. During the transfer of the substrate, it is possible to prevent the substrate, the substrate transfer support, etc. from interfering with each other due to the Coulomb force due to static electricity, and to prevent the substrate from shaking, and prevent the generation of particles due to transfer errors and mutual contact. A mounting mechanism, a substrate transfer apparatus, and a semiconductor manufacturing apparatus are provided.

[0012]

A first invention is a substrate provided with a substrate storage device (3, 4) for accommodating at least the substrate 2, and a transfer substrate support device 5 for transferring the substrate 2. In the transfer mechanism, an antistatic or static elimination mechanism (6, 24, 6) for part or all of the substrate 2, the substrate storage tools (3, 4), the substrate transfer support tool 5, the substrate storage tool storage space 11, etc. 28)
Is provided.

A second aspect of the invention is the substrate transfer mechanism of the first aspect of the invention, which is an antistatic or static elimination mechanism (6, 24, 28).
The control mechanism or the adjustment mechanism for controlling or adjusting the degree of action of

A third aspect of the invention is the substrate transfer mechanism of the first or second aspect of the invention, which includes the substrate 2, the substrate storage tools (3, 4), the substrate transfer support tool 5, the substrate storage tool storage space 11 and the like. The charge amount of one or all of them is monitored and displayed, or feedback control is performed.

In a fourth aspect of the present invention, the substrate transfer mechanism of the first, second or third aspect is provided with a mechanism 6 using ionized air as an antistatic or static elimination mechanism.

A fifth aspect of the present invention is configured such that the substrate transfer mechanism of the first, second or third aspect includes a mechanism 24 using soft X-ray irradiation as an antistatic or static elimination mechanism.

According to a sixth aspect of the present invention, in the substrate transfer mechanism of the first, second or third aspect, a mechanism 28 using vacuum ultraviolet irradiation is provided as an antistatic or static elimination mechanism.

A substrate transfer device according to a seventh aspect of the present invention is
The substrate transfer mechanism (1, 22, 27) of the second, third, fourth, fifth or sixth invention is provided.

A semiconductor manufacturing apparatus according to an eighth invention comprises a substrate transfer mechanism (1, 22, 27) of the first, second, third, fourth, fifth or sixth invention. To do.

[0020]

According to the substrate transfer mechanism of the first aspect of the present invention, the substrate 2, the substrate holders (3, 4), the substrate transfer support member 5, and the substrate transfer support members 5 are provided by the antistatic or static elimination mechanisms (6, 24, 28). Static charge is prevented or removed from a part or the whole of the substrate storage tool storage area 11, and when the substrate 2 is transferred from, for example, one substrate storage tool 4 to another substrate holder 3, the substrate caused by static electricity is transferred. Two
The interference between the substrate transfer support 5 and the like is suppressed, and a transfer error is prevented. It is possible to prevent particles from being generated due to friction and collision between the substrate 2 and the substrate support portion 9 of the substrate storage device 3 due to the vibration of the substrate 2 due to the interference between the substrate 2 and the substrate transfer support tool 5. Further, it is possible to prevent the particles from floating around in the vicinity of the substrate 2 due to the charging of the substrate 2, the substrate storage tool 3, etc., and to contaminate the substrate 2.

According to a second aspect of the present invention, in the substrate transfer mechanism of the first aspect, an antistatic or static elimination mechanism (6, 2) is further provided.
By providing a control mechanism or an adjusting mechanism for controlling or adjusting the degree of the action (4, 28), it is possible to perform an appropriate antistatic or static elimination action in accordance with the amount of charge.

According to the third aspect of the invention, in the substrate transfer mechanism of the first or second aspect of the invention, the state of the charge amount can be known by further monitoring and displaying the charge amount. . Alternatively, the charge amount is feedback-controlled, that is, the charge amount is detected, and the detection signal is returned to the antistatic or static elimination mechanism to control the degree of its action, whereby proper antistatic or static elimination can be performed.

According to the fourth aspect of the invention, the first, second or third aspects are provided.
In the substrate transfer mechanism of (1), since the mechanism 6 using ionized air is provided as an antistatic or static elimination mechanism, the + (positive) and − (negative) existing in the ionized air are provided.
Particles (ions) 7 having a charge of are attracted to − (negative) charged ones and + (positive) charged ones,
By mutually canceling out the electric charges, good antistatic or static elimination is performed.

According to the fifth invention, the first, second or third
In the substrate transfer mechanism, the mechanism 24 using soft X-ray irradiation is provided as an antistatic or static elimination mechanism, so that light in the soft X-ray region (wavelength: several millimeters) that is relatively easily absorbed by gas molecules is provided. If the charged object, that is, the atmosphere near the substrate 2, the substrate storage tool 3, etc. is irradiated, a large amount of ions and electrons 25 necessary for the charge removal are generated, and the charge of the charged object can be canceled out to perform good charge removal. Is prevented.

According to the sixth aspect of the invention, the first, second or third aspect is provided.
In the substrate transfer mechanism, the mechanism 28 that uses vacuum ultraviolet irradiation is provided as an antistatic or static elimination mechanism, so that a large amount of ions and electrons 30 are generated when the substrate is transferred in a vacuum, and the substrate 2 As a result, sufficient charge removal is performed on the substrate storage tool 3 and the like, and transfer errors are prevented.

According to the substrate transfer apparatus of the seventh invention,
By providing the substrate transfer mechanism (1, 22, 27) of the first, second, third, fourth, fifth, or sixth invention, it is possible to prevent a transfer error of the substrate due to static electricity, and to prevent particles from moving. Can be prevented.

According to the semiconductor manufacturing apparatus of the eighth invention, the substrate transfer mechanism (1, 22, 27) of the first, second, third, fourth, fifth or sixth invention is provided. As a result, the transfer error of the semiconductor substrate 2 due to static electricity is prevented, the generation of particles is prevented, and the characteristic deterioration due to static electricity,
It is possible to manufacture a highly reliable semiconductor device that is not destroyed and is not contaminated with particles.

[0028]

Embodiments of the present invention will be described below with reference to the drawings.

Embodiment 1 FIG. 1 is a schematic configuration diagram of a main part showing an example of a substrate transfer mechanism suitable for carrying out the present invention. This substrate transfer mechanism 1
Is a first substrate storage tool (for example, a Teflon wafer carrier) 3 for storing a substrate (for example, a silicon wafer) 2,
Similarly, a second substrate storage tool (for example, a quartz boat) 4 for storing the substrate 2 and a transfer substrate support for transferring the substrate 2 between the first and second substrate storage tools 3 and 4 Tool 5 and
And an ionized air generator 6 constituting an antistatic or static elimination mechanism.

The first substrate storage tool 3, that is, a wafer carrier made of, for example, Teflon, has a box shape having an opening 8 whose one side is open, as shown in FIG. Substrate (eg silicon wafer) on both inner side walls
A plurality of groove-shaped supporting portions 9 for horizontally supporting 2 are formed at predetermined intervals in the vertical direction. Board 2
In the first substrate storage device 3, a plurality of substrates are horizontally stored and held so that the periphery thereof is engaged with the support portion 9.

The first substrate storage tool 3 is arranged on the turntable 11 and is carried to the illustrated position via the cassette loader 12 together with the turntable 11.

As shown in FIGS. 3 and 4, the second substrate holder 4, that is, the quartz boat, has four quartz columns 14 [14A, 14] which are in contact with four places around the substrate 2.
B, 14C, 14D], and the four quartz struts 1
4 [14A, 14B, 14C, 14D], that is, groove-shaped supporting portions 15 for supporting the substrate 2 are formed in the vertical direction at predetermined portions at the portions in contact with the substrate 2.

The substrate 2 has a second substrate storage tool 4 around the periphery thereof.
A plurality of sheets are held horizontally so as to be engaged with the supporting portions 15 of the four columns 14 constituting the above.

The second substrate storage tool 4 is attached to the boat elevator 17, and after the substrate 2 is transferred to the second substrate storage tool 4, the second substrate storage tool 4 is transported to the next processing chamber via the boat elevator 17. Is done as is done.

The transfer substrate support 5 is attached to the arm of the robot 18 so that it can be moved forward and backward in the horizontal direction and can be reversed in the horizontal plane, and it can be moved vertically (up and down) by the robot elevator 19 to which the robot 17 is attached. Direction).

The ionized air generator 6 is arranged above the position where the first substrate holder 3 is carried. The ionized air generator 6 is, for example, one that ionizes air by applying a voltage of several thousand V to a metal electrode and discharging the metal electrode. In FIG. 1, reference numeral 20 is a partition plate that partitions the side on which the first substrate storage device 3 is arranged and the side on which the second substrate storage device 4 is arranged.

Next, an example of the operation of the substrate transfer mechanism 1 having such a configuration will be described in which the substrate 2 such as silicon installed in the second substrate storage tool 4 is transferred to the first substrate storage tool 3. explain.

In this example, in order to avoid the influence of particles as much as possible, the lowest substrate 2 of the second substrate storage tool 4 is sequentially transferred to the first substrate storage tool 3. In the first substrate storage tool 3, the substrates are stored in order from top to bottom.

First, the transfer substrate support 5 is inserted directly below (several mm below) the substrate 2 installed in the second substrate storage 4. The support 5 is slightly raised by the robot elevator 19 to lift and hold the substrate 2 as it is. The support 5 retracts with the substrate 2 held, and is withdrawn from the second substrate storage 4. Next, the support tool 5 is inverted and moved to a predetermined position of the first substrate storage tool 3 via the robot elevator 19. While supporting the substrate 2, the supporting tool 5 advances and is inserted into a predetermined position of the first substrate storing tool 3. And the support tool 5 goes down a little via the robot elevator 19. As a result, the substrate 2 is held by the substrate support portion 9 of the first substrate storage tool 3 and separated from the support tool 5. Then, the support 5
Moves backward and is withdrawn from the first substrate storage device 3.

At this time, ionized air 7 is generated by the ionized air generator 6, and the ionized air 7 floats near the first substrate storage 3, substrate 2, support 5 and the like. At this time, a clean fan or the like may be used to forcibly blow the ionized air 7 onto the first substrate storage device 3, the substrate 2, the support device 5, and the like.

Particles (ions) having + (positive) and-(negative) charges are present in the ionized air 7, the former being charged to- (negative) and the latter being + (. Positive)
Be attracted to something that is charged to. Then, the charges can be canceled each other and the charge can be removed. Therefore, mutual interference due to the Coulomb force of static electricity is less likely to occur. For this reason,
The transfer operation described above can be performed without vibrating the substrate 2 or the like.

Therefore, according to the substrate transfer mechanism 1, the substrate 2 is detached from the supporting portion 9 of the first substrate storage tool 3 due to the vibration and falls, or the installation position is displaced from the predetermined position, and the substrate 2 is moved. The transfer of the substrate 2 can be performed well without making a transfer error such that the substrate 2 is held in an unstable state, or the substrate 2 is not properly mounted on the transfer substrate support 5 at the next transfer. It can be carried out.

Further, the substrate 2 can be transferred without causing particles due to friction or collision between the substrate 2 and the support portion 9 of the first substrate storage 3 due to vibration. Since contamination by these particles is avoided, it is possible to prevent obstruction of element formation in the case of a substrate, for example, a semiconductor wafer.

Further, since the charges of the substrate 2, the substrate storage device 3, etc. are removed, it is possible to prevent the particles floating in the vicinity from being attracted to contaminate the substrate 2, the substrate storage device 3, etc.

Further, since the charge on the substrate 2 is removed, it is possible to prevent the characteristics of the semiconductor element formed on the substrate 2, for example, a semiconductor wafer, from being deteriorated or destroyed by static electricity.

Embodiment 2 FIG. 5 is a schematic configuration diagram of essential parts showing another example of a substrate transfer mechanism suitable for use in an embodiment of the present invention. The substrate transfer mechanism 22 uses a soft X-ray irradiation static eliminator 24 as an antistatic or static eliminator. In the figure, the first
Substrate storage device (for example, a Teflon wafer carrier) 3,
Other configurations such as the second substrate storage tool (for example, a quartz boat) 4, the substrate (for example, a silicon wafer) 2, the transfer substrate support tool 5, the robot 18, and the like are the same as those in FIGS. 1 to 4 of the first embodiment. Therefore, the same reference numerals are given and duplicate description is omitted.

The soft X-ray irradiation static eliminator 24 emits light in the soft X-ray region (wavelength: a few nm) which is relatively easily absorbed by gas molecules.
By irradiating the atmosphere near the charged object, a large amount of ions and electrons 25 necessary for static elimination are generated.

Next, an example of the operation of the substrate transfer mechanism 22 having such a configuration will be described in which the substrate 2 such as silicon installed in the second substrate storage 4 is transferred to the first substrate storage 3. explain. Similar to the first embodiment, the transfer substrate support 5 is inserted immediately below (a few mm below) the substrate 2 installed in the second substrate storage 4. This support 5 is a robot elevator 1
The substrate 2 is slightly raised by 9 to lift and hold the substrate 2 as it is. The support 5 retracts with the substrate 2 held, and is withdrawn from the second substrate storage 4. Next, the support tool 5 is inverted and moved to a predetermined position of the first substrate storage tool 3 via the robot elevator 19. While supporting the substrate 2, the support 5
Moves forward and is inserted into a predetermined position of the first substrate storage device 3. And the support tool 5 goes down a little via the robot elevator 19. As a result, the substrate 2 becomes the first substrate storage tool 3
It is held by the substrate supporting part 9 and is separated from the supporting tool 5. Then, the support tool 5 retracts and is withdrawn from the first substrate storage tool 3.

At this time, a large amount of ions and electrons 25 are generated by the soft X-ray irradiation static eliminator 24, and the ions and electrons 25 are generated in the vicinity of the first substrate storage 3, substrate 2, support 5 and the like. A large amount is floating. At this time, ions or electrons 25 may be forcibly blown onto the first substrate storage 3, substrate 2, support 5 and the like by a clean fan or the like.

Among these ions and electrons having + (positive) and − (negative) charges, + (positive) ions are charged to − (negative) and − (negative) ions and electrons are charged. It is attracted to something that is positively (positively) charged. Then, the charges can be canceled each other and the charge can be removed. Therefore, mutual interference due to the Coulomb force of static electricity is less likely to occur. Therefore, the above-described operation can be performed without vibrating the substrate 2 or the like.

Therefore, according to the substrate transfer mechanism 22,
The substrate 2 is detached from the supporting portion 9 of the first substrate storage tool 3 due to the vibration and falls, or the installation position is deviated from a predetermined position and the substrate 2 is held in an unstable state, or the next transfer is performed. Sometimes the substrate 2 does not mount well on the transfer support 5,
The substrate 2 can be satisfactorily transferred without causing a transfer error such as.

Further, the substrate 2 can be transferred without generation of particles due to friction or collision between the substrate 2 and the support portion 9 of the first substrate storage 3 due to vibration. Contamination by these particles is avoided, so the substrate,
For example, in the case of a semiconductor wafer, it is possible to prevent obstruction of element formation.

Further, since the charges of the substrate 2, the substrate storage device 3, etc. are removed, it is possible to prevent the particles floating in the vicinity from being attracted and contaminate the substrate 2, the substrate storage device 3, etc.

Further, since the charge on the substrate 2 is removed, it is possible to prevent the characteristics of the semiconductor element formed on the substrate 2, for example, a semiconductor wafer, from being deteriorated or destroyed by static electricity.

In the ionized air generator 6 using the discharge used in Example 1, the reaction product adheres to the electrodes during long-term use, and periodic maintenance such as cleaning is required. These are sources of dust generation, so be careful if you dislike dust generation, such as in the semiconductor industry. But soft X
The radiation irradiation static eliminator 24 does not have such a problem and can be used cleanly without maintenance. Further, unlike discharge, ozone is hardly generated, so that it can be used even when ozone is disliked.

However, in order to prevent irradiation of the human body, a shut-off process is necessary. Soft X-rays have extremely low permeability to substances, and a blocking plate of about 1 mm for a metal plate and a blocking plate of about 2 mm for a vinyl chloride plate is sufficient.

Embodiment 3 FIG. 6 is a schematic configuration diagram of a principal part showing another example of a substrate transfer mechanism suitable for use in an embodiment of the present invention, particularly a substrate transfer mechanism for transferring in a vacuum. Is. This substrate transfer mechanism 27
In particular, a vacuum ultraviolet irradiation static eliminator 28 is used as an antistatic or static eliminator, and is connected to a vacuum pump via an exhaust pipe 29 so that the inside of the mechanism 27 becomes a vacuum.

In the figure, a first substrate storage tool (for example, a Teflon wafer carrier) 3, a second substrate storage tool (for example, a quartz boat) 4, a transfer substrate support tool 5, a robot 18, etc. 1 to FIG. 4 of the first embodiment, the same reference numerals are given and redundant description will be omitted.

The vacuum ultraviolet irradiation static eliminator 27 has a high static eliminating effect in an inert gas or reduced pressure atmosphere, and irradiates the atmosphere near the charged object with the ions and electrons 30 necessary for static eliminating.

Next, an example of the operation of the substrate transfer mechanism 27 having such a configuration will be described in which the substrate 2 such as silicon installed in the second substrate storage 4 is transferred to the first substrate storage 3. explain. After evacuating through the exhaust pipe 29 by the vacuum pump to make the inside of the substrate transfer mechanism 27 into a vacuum atmosphere, just below the substrate 2 (several millimeters below) installed in the second substrate storage tool 4 as in the first embodiment. ), The transfer substrate support 5 is inserted.
The support 5 is slightly raised by the robot elevator 19 to lift and hold the substrate 2 as it is. The support 5 retracts with the substrate 2 held, and is withdrawn from the second substrate storage 4. Next, the support tool 5 is inverted and moved to a predetermined position of the first substrate storage tool 3 via the robot elevator 19. While supporting the substrate 2, the supporting tool 5 advances and is inserted into a predetermined position of the first substrate storing tool 3. And the support tool 5 goes down a little via the robot elevator 19. As a result, the substrate 2 is held by the substrate support portion 9 of the first substrate storage tool 3 and separated from the support tool 5. Then, the support tool 5 retracts and is withdrawn from the first substrate storage tool 3.

At this time, the ions and electrons 30 are generated by the vacuum ultraviolet irradiation static eliminator 28, and the ions and electrons 30 are generated in the vicinity of the first substrate storage 3, substrate 2, support 5 and the like.
Is floating.

Among these ions and electrons 30 having + (positive) and − (negative) charges, + (positive) ions are −.
-(Negative) ions and electrons are +
It is attracted to something that is (positively) charged. Then, the charges can be canceled each other and the charge can be removed. Therefore,
Less susceptible to mutual interference due to electrostatic Coulomb force. Therefore, the transfer operation described above can be performed without vibrating the substrate 2 or the like.

Therefore, according to the substrate transfer mechanism 27,
The substrate 2 is detached from the supporting portion 9 of the first substrate storage tool 3 due to the vibration and falls, or the installation position is deviated from a predetermined position and the substrate is held in an unstable state, or at the time of the next transfer. The substrate 2 can be satisfactorily transferred without causing a transfer error such as the substrate 2 not being properly mounted on the transfer support 5.

Further, the substrate 2 can be transferred without generation of particles due to friction or collision between the substrate 2 and the support portion 9 of the first substrate storage 3 due to vibration. Contamination from these particles is avoided, so the substrate,
For example, in the case of a semiconductor wafer, it is possible to prevent obstruction of element formation.

Further, since the charges of the substrate 2, the substrate storage device 3, etc. are removed, it is possible to prevent the particles floating in the vicinity from being attracted and to contaminate the substrate 2, the substrate storage device 3, etc.

Further, since the charge on the substrate 2 is removed, it is possible to prevent the characteristics of the substrate 2, for example, a semiconductor element formed on the semiconductor wafer, from being deteriorated or destroyed by static electricity.

In each of the first, second, and third embodiments described above, the ionization air generator 6, the soft X-ray irradiation static eliminator 24, and the vacuum ultraviolet irradiation static eliminator 28 constituting the antistatic or static elimination mechanism are further ionized air. 7, a control mechanism that controls the degree of generation of ions and electrons 25 and 30
Alternatively, it can be configured such that an adjusting mechanism for adjusting is provided. As a result, the degree of action of the antistatic or static elimination mechanism can be controlled or adjusted, and appropriate antistatic or static elimination can be performed.

In each of the first, second, and third embodiments described above, the charge amount of one or all of the substrate, the substrate storage tool, the substrate transfer support tool, the substrate storage tool storage area, etc. is further monitored. However, it is possible to display or perform feedback control. As a result, it is possible to know the status of the charge amount. Further, by detecting the charge amount and returning the detection signal to an antistatic or static elimination mechanism to control the amount of ionized air 7, ions and electrons 25, 30 generated, the charge amount is automatically changed according to the charge amount. It can prevent or remove electricity.

As the antistatic or static elimination mechanism, in addition to the above example, for example, a mechanism for grounding the substrate storage tool can be used.

The substrate transfer mechanisms 1, 22, 27 described above are
It is suitable for transfer of semiconductor wafers. Therefore, a semiconductor manufacturing apparatus including the substrate transfer mechanism 1, 22, or 27 can be configured. As a result, it is possible to prevent semiconductor wafer transfer errors due to static electricity, prevent the generation of particles, contamination due to floating particles, etc., and prevent the deterioration and destruction of element characteristics due to static electricity. A highly reliable semiconductor device can be manufactured with high yield.

Further, the substrate transfer device having the substrate transfer mechanisms 1, 22, or 27 can be independently constructed.
As a result, as described above, it is possible to prevent the substrate transfer error due to static electricity, and it is possible to transfer the substrate smoothly.

The above-mentioned substrate transfer mechanisms 1, 22, 27 or the independent substrate transfer device provided with these substrate transfer mechanisms can be applied to transfer of substrates other than semiconductor wafers.

In the above, the embodiment of the present invention has been described, but the present invention is not limited to this embodiment, and is limited by the shape of the substrate storage tool, the transfer substrate support tool and the like. Not to receive. For example, the same effect can be obtained when the substrate is moved between the substrate storage tool and the processing chamber of the semiconductor manufacturing apparatus.

[0074]

According to the present invention, when a substrate is transferred from, for example, one substrate storage device to another substrate storage device, the substrate, the transfer substrate support device and the like interfere with each other due to Coulomb force due to static electricity. Etc. vibrate, the substrate falls off the support part of the substrate storage tool, or the installation position deviates from a predetermined position and the substrate is held in an unstable state, or the transfer substrate at the next transfer. It is possible to prevent a transfer error such as being not properly held by the support tool.

It is possible to prevent particles from being generated due to friction or collision between the substrate and the supporting portion of the substrate storage tool due to vibration of the substrate or the like. It is possible to prevent the particles from being contaminated by these particles and obstructing element formation.

It is possible to prevent the substrate, the substrate storage tool, etc. from being charged and attracting particles that float in the vicinity to be contaminated.

It is possible to prevent the substrate from being charged and the semiconductor element formed on the substrate from being deteriorated or destroyed by static electricity.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing an example of a substrate transfer mechanism according to the present invention.

FIG. 2 is a perspective view of a main part showing an example of a first substrate storage tool (wafer carrier) applied to the present invention.

FIG. 3 is a perspective view showing an example of a second substrate storage tool (quartz boat) applied to the present invention.

4 is a cross-sectional view of the substrate storage device (quartz boat) of FIG.

FIG. 5 is a configuration diagram showing another example of the substrate transfer mechanism according to the present invention.

FIG. 6 is a configuration diagram showing another example of the substrate transfer mechanism according to the present invention.

[Explanation of symbols]

 1, 22, 27 Substrate transfer mechanism 2 Substrate 3 First substrate storage tool (for example, carrier) 4 Second substrate storage tool (for example, quartz boat) 5 Transfer substrate support 6 Ionization air generator 7 Ionization air 9 Substrate support 11 Turntable 12 Cassette loader 17 Boat elevator 18 Robot 19 Robot elevator 24 Soft X-ray irradiation static eliminator 25 Ions and electrons 28 Vacuum ultraviolet irradiation static eliminator 29 Exhaust pipe 30 Ions and electrons

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[Procedure amendment]

[Submission date] July 28, 1994

[Procedure Amendment 1]

[Document name to be amended] Statement

[Name of item to be corrected] 0024

[Correction method] Change

[Correction content]

According to the fifth invention, the first, second or third
In the substrate transfer mechanism, the mechanism 24 using soft X-ray irradiation is provided as an antistatic or static elimination mechanism, so that light in the soft X-ray region (wavelength: a few nm ) that is relatively easily absorbed by gas molecules is provided. If the charged object, that is, the atmosphere near the substrate 2, the substrate storage tool 3, etc. is irradiated, a large amount of ions and electrons 25 necessary for the charge removal are generated, and the charge of the charged object can be canceled out to perform good charge removal. Is prevented.

[Procedure Amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0064

[Correction method] Change

[Correction content]

Further, the substrate 2 can be transferred without generation of particles due to friction or collision between the substrate 2 and the support portion 9 of the first substrate storage 3 due to vibration. So that by the these Pateikuru pollution is avoided, the substrate,
For example, in the case of a semiconductor wafer, it is possible to prevent obstruction of element formation.

Claims (8)

[Claims] 1. A substrate transfer mechanism including at least a substrate storage tool for accommodating a substrate and a transfer substrate support tool for transferring the substrate, the substrate, the substrate storage tool, and the substrate transfer support tool. A substrate transfer mechanism, which is provided with an antistatic or static elimination mechanism for a part or all of a substrate storage tool storage area or the like. 2. The substrate transfer mechanism according to claim 1, further comprising a control mechanism or an adjustment mechanism for controlling or adjusting the degree of action of the antistatic or static elimination mechanism. 3. A substrate, a substrate storage tool, a substrate transfer support tool,
3. The substrate transfer mechanism according to claim 1, wherein the charge amount is monitored, displayed, or feedback-controlled with respect to a part or the whole of the substrate storage tool storage area. 4. The substrate transfer mechanism according to claim 1, wherein a mechanism using ionized air is provided as the antistatic or static elimination mechanism. 5. The substrate transfer mechanism according to claim 1, wherein a mechanism using soft X-ray irradiation is provided as the antistatic or static elimination mechanism. 6. The substrate transfer mechanism according to claim 1, wherein a mechanism using vacuum ultraviolet irradiation is provided as the antistatic or static elimination mechanism. 7. A substrate transfer device comprising the substrate transfer mechanism according to claim 1, 2, 3, 4, 5 or 6. 8. A semiconductor manufacturing apparatus comprising the substrate transfer mechanism according to claim 1, 2, 3, 4, 5 or 6.