JPH088290A - Wire bonding method and its device and semiconductor device - Google Patents

Wire bonding method and its device and semiconductor device

Info

Publication number
JPH088290A
JPH088290A JP6134394A JP13439494A JPH088290A JP H088290 A JPH088290 A JP H088290A JP 6134394 A JP6134394 A JP 6134394A JP 13439494 A JP13439494 A JP 13439494A JP H088290 A JPH088290 A JP H088290A
Authority
JP
Japan
Prior art keywords
bonding
wire
width
pads
capillary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6134394A
Other languages
Japanese (ja)
Inventor
Takeshi Nishizawa
武司 西澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6134394A priority Critical patent/JPH088290A/en
Publication of JPH088290A publication Critical patent/JPH088290A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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Abstract

PURPOSE:To realize higher density and higher integration of a semiconductor device by forming a bonding part of a lead wire in a manner that it will have a small width in a first direction along the arrangement of a bonding pad and a large width in a second direction crossing the first direction at a right angle and by reducing the width of bonding pad as a result. CONSTITUTION:A bonding wire (lead wire) 3 which consists of Al connected by an ultrasonic bonder is subject to bonding on respective bonding pads 2A, 2B, 2C, etc., which are arranged in line in one direction along a side of a chip 1 on the peripheral part of the semiconductor chip 1. At this time, a width A in the direction along the arranging direction where the pads 2A, 2B, 2C, etc., are arranged in a one-dimensional direction along the side of the chip 1 is made smaller. In addition, a width B in the direction crossing the arranging direction of the pads 2A, 2B, 2C, etc., at a right angle is made larger, and the chip 1 is bonded by a deformed ball bonding part 4 which has an approximately rectangular or elliptic shape.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明はネールヘッド方式のワイ
ヤボンディング方法とそれに用いるワイヤボンディング
装置、及び上記ワイヤボンディング方法を用いて形成さ
れる半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nail head type wire bonding method, a wire bonding apparatus used therefor, and a semiconductor device formed by using the above wire bonding method.

【０００２】ネールヘッド方式のワイヤボンディング
は、微細組立において一般的な接続方法であるが、近
年、半導体装置の高密度・高集積化に伴って半導体チッ
プに配設されるボンディングパッドの間隔は極度に狭め
られてきており、ボール径のばらつきやボンディング位
置のばらつきにより、隣接するボール（ネールヘッド
部）とボンディングパッドあるいはボール（ネールヘッ
ド部）同士がショートするという問題が起こっており、
改善が望まれている。Nail head type wire bonding is a general connecting method in fine assembly, but in recent years, as the density and integration of semiconductor devices have increased, the spacing between bonding pads arranged on a semiconductor chip has become extremely high. The problem is that the adjacent balls (nail head part) and the bonding pads or balls (nail head part) are short-circuited due to variations in ball diameter and bonding position.
Improvement is desired.

【０００３】[0003]

【従来の技術】図５は従来のネールヘッド方式のワイヤ
ボンディング品を模式的に示す斜視図で、図中の51は半
導体チップ、52はボンディングパッド、53はリード線
（ボンディングワイヤ）、54はボールボンディング（ネ
ールヘッドボンディング）部、55は図示しないパッケー
ジ、リードフレーム等の内部リード上へのクレセント状
の第２ボンディング部を示す。2. Description of the Related Art FIG. 5 is a perspective view schematically showing a conventional nail head type wire bonding product. In the figure, 51 is a semiconductor chip, 52 is a bonding pad, 53 is a lead wire (bonding wire), and 54 is A ball bonding (nail head bonding) portion 55 indicates a crescent-shaped second bonding portion on an internal lead such as a package or a lead frame (not shown).

【０００４】上記ボンディング品を形成するボールボン
ディングに際し、用いられていた従来のボンディングキ
ャピラリーは図６に示すように、先端面56S に、該キャ
ピラリー56の中心に形成されているワイヤ（リード線）
挿通孔57及びキャピラリー56の先端面56S と同心の開孔
面を有する凹部58が形成された構造を有していた。As shown in FIG. 6, a conventional bonding capillary used in the ball bonding for forming the above-mentioned bonded article has a wire (lead wire) formed at the center of the capillary 56 at the tip surface 56S, as shown in FIG.
It had a structure in which the insertion hole 57 and the recessed portion 58 having an opening surface concentric with the tip surface 56S of the capillary 56 were formed.

【０００５】そして上記ボンディングキャピラリー56を
用い例えば超音波によるボールボンディングのなされた
ワイヤボンディング部54は、図７に模式的に示す斜視図
のように、ボンディングパッド52(52A) に接する円形の
底面を有する擬似半球状に形成され、例えば、ボンディ
ングワイヤに直径ｄ＝25μｍのアルミニウム（Ａｌ）ワ
イヤ53を用いた場合には、ボールボンディング部54の直
径Ｄ（底面とほぼ等しくなる）が80〜100 μｍ程度の大
きさになるように押し潰し十分なボンディング強度が得
られる状態でパッド52上へのボンディングがなされてい
た。なお図７において、52A 、52B 、52C はボンディン
グパッドを示し、他の符号は図５と同一対象物を示す。The wire bonding portion 54, which is ball-bonded by ultrasonic waves using the bonding capillary 56, has a circular bottom surface contacting with the bonding pad 52 (52A) as shown in the perspective view schematically shown in FIG. When the aluminum (Al) wire 53 having a diameter d = 25 μm is used as the bonding wire, the diameter D (which is almost equal to the bottom surface) of the ball bonding portion 54 is 80 to 100 μm. Bonding on the pad 52 was performed in a state where the pad 52 was crushed to a size of a size and sufficient bonding strength was obtained. In FIG. 7, reference numerals 52A, 52B and 52C indicate bonding pads, and other reference numerals indicate the same objects as those in FIG.

【０００６】[0006]

【発明が解決しようとする課題】一方、前記のように半
導体装置の高密度・高集積化に伴って、チップの周辺部
に並んで配設されるボンディングパッドの大きさ及び間
隔はより一層縮小されることが要求されるが、上記円形
のボンディング面を有する従来方式のネールヘッドボン
ディングを用いる限りにおいては、十分なボンディング
強度が最低の専有面積で得られる角形のパッド形状は正
方形に限られ、且つその大きさは、一辺の長さが前記の
ボンディング強度が十分に得られるボンディング部54の
直径Ｄ以上に限定される。そこで、上記高密度・高集積
化を達成するために、図８の従来の問題点を示す模式平
面図に示したように従来の半導体装置においては、半導
体チップ51の周辺部に並んで配設される複数のボンディ
ングパッド52A 、52B 、52C等の配設間隔(l) を縮小す
る方法によらざるを得ず、その配設間隔(l) は、例えば
20μｍ程度に極度に縮小されてきている。On the other hand, as described above, with the increase in density and integration of semiconductor devices, the size and spacing of the bonding pads arranged side by side on the periphery of the chip are further reduced. However, as long as the conventional nail head bonding having the circular bonding surface is used, the square pad shape that can obtain a sufficient bonding strength in the minimum occupied area is limited to a square, Moreover, the size thereof is limited to the diameter D or more of the bonding portion 54 whose one side has a sufficient bonding strength. Therefore, in order to achieve the above-mentioned high density and high integration, in the conventional semiconductor device as shown in the schematic plan view of FIG. There is no choice but to reduce the disposition interval (l) of the plurality of bonding pads 52A, 52B, 52C, etc.
It has been extremely reduced to about 20 μm.

【０００７】そのために、ワイヤボンディングに際して
のボール径のばらつきや、ボンディング位置のばらつき
によって図示のように隣接するボールボンディング部例
えば54B 、54C 同士のショートや、ボールボンディング
部と隣接するボンディングパッドとのショート（図示せ
ず）が発生し、ワイヤボンディングの歩留りが低下する
と共に、上記ショート不良を以後の製造工程に送らない
ための顕微鏡等による外観検査に大きな工数を費やして
いた。Therefore, due to variations in ball diameter during wire bonding and variations in bonding position, short-circuiting between adjacent ball-bonding portions such as 54B and 54C as shown in the figure, or short-circuiting between the ball-bonding portions and adjacent bonding pads. (Not shown) occurs, the yield of wire bonding decreases, and a large number of man-hours are spent on the appearance inspection with a microscope or the like to prevent the short circuit defect from being sent to the subsequent manufacturing process.

【０００８】従来、上記問題を解決する手段として、ボ
ンディングした際のボール径を小さくする方法も試みら
れたが、この方法は、ボンディング強度の不足による信
頼性の低下が問題になり、実施が不可能であった。Conventionally, as a means for solving the above problems, a method of reducing the ball diameter at the time of bonding has been attempted, but this method is problematic in that reliability is deteriorated due to insufficient bonding strength, and implementation thereof is not possible. It was possible.

【０００９】そこで本発明は、ボンディングパッドの配
列に沿う方向のボンディングパッドの幅をより一層縮小
し、且つ十分なボンディング強度が得られるネールヘッ
ド方式のワイヤボンディング方法及びそれに用いるワイ
ヤボンディング装置と、上記ワイヤボンディング方法を
用いて形成される半導体装置の構造を提供し、前記ボン
ディングパッド幅の縮小によって半導体装置の一層の高
密度・高集積化を達成させながらその製造歩留り及び信
頼性を向上することを目的とする。Therefore, the present invention provides a nail head type wire bonding method and a wire bonding apparatus used therefor capable of further reducing the width of the bonding pads in the direction along the arrangement of the bonding pads and obtaining sufficient bonding strength. To provide a structure of a semiconductor device formed by using a wire bonding method, and to improve the manufacturing yield and reliability while achieving higher density and higher integration of the semiconductor device by reducing the bonding pad width. To aim.

【００１０】[0010]

【課題を解決するための手段】上記課題の解決は、一次
元方向に並んで配設された複数のボンディングパッドの
各々にネールヘッド方式によりリードのボンディングを
行うに際して、該リード線のボンディング部を、該一次
元方向で狭い幅を有し該一次元方向に直交する方向で広
い幅を有する形状に形成する本発明によるワイヤボンデ
ィング方法、若しくは、ネールヘッド方式のワイヤボン
ディング装置であって、先端面に該先端面と同心の円形
開孔面を有する凹部が設けられ、且つ該凹部の側壁の対
向する２個所に該凹部の内部から該キャピラリーの外面
に達する切り欠き部が形成されてなるボンディングキャ
ピラリーを具備せしめた本発明によるワイヤボンディン
グ装置、若しくは、周辺部に辺に沿って複数のボンディ
ングパッドが並んで配設された半導体チップを有し、該
ボンディングパッドに対してネールヘッドボンディング
によってリード線のボンディングがなされる半導体装置
において、該リード線のボンディング部が、該ボンディ
ングパッドの配列に沿う第１の方向で狭い幅を有し該第
１の方向と９０度異なる第２の方向で広い幅を有する形
状に形成されている本発明による半導体装置によって達
成される。To solve the above-mentioned problems, when a lead is bonded to each of a plurality of bonding pads arranged side by side in a one-dimensional direction by a nail head system, the bonding portion of the lead wire is A wire bonding method or nail head type wire bonding apparatus according to the present invention for forming a shape having a narrow width in the one-dimensional direction and a wide width in a direction orthogonal to the one-dimensional direction, A bonding capillary in which a concave portion having a circular hole surface concentric with the tip end surface is provided, and notch portions reaching from the inside of the concave portion to the outer surface of the capillary are formed at two opposing positions on a side wall of the concave portion. Or a wire bonding apparatus according to the present invention, which is provided with a plurality of bonding pads arranged along a side in a peripheral portion. In a semiconductor device having a semiconductor chip arranged and a lead wire bonded to the bonding pad by nail head bonding, a bonding portion of the lead wire has a first direction along an array of the bonding pad. It is achieved by the semiconductor device according to the present invention, which is formed into a shape having a narrow width at a second direction and a wide width at a second direction different from the first direction by 90 degrees.

【００１１】[0011]

【作用】図１は本発明の原理を示す本発明の方法の一実
施例の斜視模式図である。図において、１は半導体チッ
プ、2A、2B、2Cはボンディングパッド、３はリード線
（ボンディングワイヤ）、４は変形ボールボンディング
部、５は第２ボンディング（クレセント）部を示す。1 is a perspective schematic view of an embodiment of the method of the present invention showing the principle of the present invention. In the figure, 1 is a semiconductor chip, 2A, 2B and 2C are bonding pads, 3 is a lead wire (bonding wire), 4 is a modified ball bonding portion, and 5 is a second bonding (crescent) portion.

【００１２】この図に示されるように本発明のワイヤボ
ンディング方法においては、ボンディングパッド（例え
ば2A）上へのボンディングワイヤ３の接続を、ボンディ
ングワイヤの先端部に形成された、ボンディングパッド
2A、2B、2Cの配列に沿う第１の方向にＡで示すように狭
い幅を有し、該第１の方向に直交する第２の方向にＢで
示すように広い幅を有する（近時的に矩形若しくは楕円
形状の）変形ボールボンディング部４によって行う。As shown in this figure, in the wire bonding method of the present invention, the connection of the bonding wire 3 onto the bonding pad (for example, 2A) is achieved by forming the bonding pad formed at the tip of the bonding wire.
It has a narrow width as indicated by A in the first direction along the arrangement of 2A, 2B, 2C and a wide width as indicated by B in the second direction orthogonal to the first direction (recently. The deformed ball bonding portion 4 having a rectangular or elliptical shape is used.

【００１３】そしてその際、変形ボールボンディング部
のパッド2A、2B、2C等の配列の高密度化を阻害しないパ
ッド配列に直交する方向の上記Ｂの幅を、Ａの幅を上記
のように狭めても従来の円形底面を有するボンディング
部と同等あるいはそれ以上のボンディング強度が得られ
る十分に広い幅にすることにより、ボンディング強度の
保証がなされる。At this time, the width of B is narrowed in the direction orthogonal to the pad arrangement that does not hinder the high density of the arrangement of the pads 2A, 2B, 2C, etc. of the deformed ball bonding portion as described above. However, the bonding strength is guaranteed by making the width sufficiently wide so as to obtain a bonding strength equal to or higher than that of the conventional bonding portion having a circular bottom surface.

【００１４】本発明においては、上記のようにボンディ
ング部がパッド2A、2B、2C等の配列に沿う方向で狭い幅
Ａに形成されるので、それに伴ってパッド配列方向に沿
うパッドの幅を狭く形成することができ、パッド配置の
高密度化が図れる。In the present invention, since the bonding portion is formed to have a narrow width A in the direction along the arrangement of the pads 2A, 2B, 2C, etc. as described above, the width of the pad along the pad arrangement direction is accordingly narrowed. It can be formed, and the density of pads can be increased.

【００１５】また、上記のような矩形若しくは楕円形状
を有する変形ボールボンディング部４は、ボンディング
ワイヤの先端に形成したボールをキャピラリー先端部に
よってパッド上に圧接してボンディングを行う際、ボー
ル上部の幅をＢで示すように広げようとする方向のみを
選択的に押し潰すことにより形成する。従って、ボンデ
ィングに際してのボールの上記Ｂに直交するＡの方向へ
の拡がりは殆どなく、ボンディング後のＡの幅はほぼボ
ール形成時のままで均一に保たれる。従ってパッド間隔
が縮小された際にもボール潰れのばらつきによって生ず
る隣接ボール間及びボールとパッド間のショート障害は
殆ど皆無になり一層のパッド配置の高集積化高密度化が
可能になり、且つ従来行われていたワイヤボンディング
後の全数外観検査を廃止することも可能になる。Further, the deformed ball bonding portion 4 having a rectangular or elliptical shape as described above has a width of an upper portion of the ball when the ball formed at the tip of the bonding wire is pressed onto the pad by the tip of the capillary for bonding. As indicated by B, it is formed by selectively crushing only in the direction of expanding. Therefore, during bonding, there is almost no spread of the ball in the direction of A, which is orthogonal to B, and the width of A after bonding is kept almost the same as it was during ball formation. Therefore, even when the pad spacing is reduced, there is almost no short circuit between adjacent balls and between the ball and the pad caused by the variation in ball crushing, and it is possible to further increase the integration density and density of the pad arrangement. It becomes possible to abolish the 100% visual inspection after wire bonding.

【００１６】以上のことから本発明によれば、ボンディ
ングパッドの配設密度向上による半導体装置の高密度高
集積化が図れると共に、ワイヤボンディングに関連した
製造工数を従来に比べ低減し、且つ製造歩留り及び信頼
性の向上が図れる。From the above, according to the present invention, it is possible to achieve high density and high integration of a semiconductor device by improving the disposition density of bonding pads, reduce the manufacturing man-hours related to wire bonding as compared with the conventional method, and to improve the manufacturing yield. And reliability can be improved.

【００１７】[0017]

【実施例】以下本発明を、以下の図を参照して実施例に
より具体的に説明する。図１は本発明の原理を示すワイ
ヤボンディング方法の一実施例の斜視模式図、図２は本
発明に係るワイヤボンディング装置の一実施例が具備す
るボンディングキャピラリーの模式図で(a) は斜視図、
(b) は正面図、(c) は側面図、図３は本発明に係るワイ
ヤボンディング装置の他の実施例が具備するボンディン
グキャピラリーの側面図、図４は本発明に係る半導体装
置の一実施例の模式平面図である。全図を通じ同一対象
物は同一符合で示す。EXAMPLES The present invention will now be described in detail by way of examples with reference to the following drawings. FIG. 1 is a schematic perspective view of an embodiment of a wire bonding method showing the principle of the present invention, and FIG. 2 is a schematic view of a bonding capillary provided in an embodiment of a wire bonding apparatus according to the present invention (a) is a perspective view ,
(b) is a front view, (c) is a side view, FIG. 3 is a side view of a bonding capillary included in another embodiment of the wire bonding apparatus according to the present invention, and FIG. 4 is an embodiment of a semiconductor device according to the present invention. It is a schematic plan view of an example. The same object is denoted by the same reference numeral throughout the drawings.

【００１８】ネールヘッド方式のワイヤボンディングに
おいては、例えば、セラミックス等からなり中心にワイ
ヤ（リード線）の挿通孔を有するキャピラリーを用い、
このキャピラリーに挿通された例えばアルミニウム(Al)
のワイヤの先端にトーチ加熱等によりボールを形成し、
このボールをキャピラリーの先端部でボンディングパッ
ド上に圧接しキャピラリーに超音波を印加しながら押し
潰して上記Alワイヤのボール部と例えばAl薄膜からなる
ボンディングパッドとのボールボンディングがなされ
る。In the nail head type wire bonding, for example, a capillary made of ceramics or the like and having a wire (lead wire) insertion hole at the center is used.
For example, aluminum (Al) inserted in this capillary
Form a ball on the tip of the wire by heating the torch, etc.
This ball is pressed against the bonding pad at the tip of the capillary and crushed while applying ultrasonic waves to the capillary to perform ball bonding between the ball portion of the Al wire and the bonding pad made of, for example, an Al thin film.

【００１９】本発明を適用した上記ネールヘッド方式の
超音波ワイヤボンディング方法においては、図１に示す
ように、例えば半導体チップ１の周辺部上にチップ１の
辺に沿って一方向に並んで配設されるボンディングパッ
ド2A、2B、2C等の各々に前記超音波ボンダによって接続
される前記Alからなるボンディングワイヤ（リード線）
３の前記パッド例えば2A上へのボンディングが、チップ
１の辺に沿う一次元方向に配列されるボンディングパッ
ド2A、2B、2C等の配列方向に沿う方向の幅Ａが狭く、上
記パッド2A、2B、2C等の配列方向に直交する方向の幅Ｂ
が広い近時的に矩形若しくは楕円形状の変形ボール形状
を有する変形ボールボンディング部４によってなされ
る。In the above-mentioned nail head type ultrasonic wire bonding method to which the present invention is applied, as shown in FIG. 1, for example, they are arranged on the peripheral portion of the semiconductor chip 1 along one side of the chip 1 in one direction. Bonding wire (lead wire) made of Al connected to each of the bonding pads 2A, 2B, 2C, etc. provided by the ultrasonic bonder.
Bonding 3 onto the pad, for example 2A, has a narrow width A in the direction along which the bonding pads 2A, 2B, 2C, etc., which are arranged in a one-dimensional direction along the sides of the chip 1, are narrow. , B, etc. in the direction orthogonal to the arrangement direction of 2C
Is formed by a deformed ball bonding portion 4 having a rectangular or elliptical deformed ball shape which is wide in the near future.

【００２０】このような変形ボールボンディング部４の
形成を可能にするネールヘッド方式のワイヤボンダは、
キャピラリーの構造以外は従来から用いられている通常
の超音波圧着方式あるいは熱圧着方式のネールヘッドボ
ンダ（図略）と同様である。A nail head type wire bonder capable of forming the deformed ball bonding portion 4 is as follows.
Other than the structure of the capillary, it is the same as a conventional ultrasonic pressure bonding method or thermocompression bonding nail head bonder (not shown).

【００２１】そして、ボンディングキャピラリー６は、
図２に示すように、キャピラリー６の軸方向の中心に通
常通りワイヤ挿通孔７が形成されており、先端部には通
常通り基部6aから順次細くなるテーパ部6bが形成されて
いる。そしてテーパ部6bにより所定の直径に縮小された
先端面6Sには、従来同様にボンディングワイヤに形成す
るボールの径の１／２程度の深さを有する前記ワイヤ挿
通孔７及びキャピラリー先端面6Sと同心の曲面上の凹部
８が形成され、且つこの凹部８の側壁8Sの対向する１方
向（図２(a) では横方向）のみに、例えば前記テーパ部
6bの側面を削り取ることによって、前記凹部８の深さの
１／２〜２／３程度の深さの切り欠き部9A、9Bが形成さ
れた構造を有する。The bonding capillary 6 is
As shown in FIG. 2, a wire insertion hole 7 is formed in the center of the capillary 6 in the axial direction as usual, and a taper portion 6b is formed at the tip end as usual from the base 6a. The tip surface 6S reduced to a predetermined diameter by the taper portion 6b has the wire insertion hole 7 and the capillary tip surface 6S having a depth of about 1/2 of the diameter of the ball formed on the bonding wire as in the conventional case. The concavity 8 on the concentric curved surface is formed, and the side wall 8S of the concavity 8 is formed only in one opposing direction (horizontal direction in FIG. 2 (a)), for example, the tapered portion.
The side surface of 6b is shaved off to form the cutouts 9A, 9B having a depth of about 1/2 to 2/3 of the depth of the recess 8.

【００２２】なおここで、通常の25μｍφのボンディン
グワイヤを用いる場合には、例えば、キャピラリー先端
面6Sの径は 150μｍφ程度、ワイヤ挿通孔７の径は35μ
ｍφ程度、キャピラリー先端の凹部８の開口径は60〜80
μｍφ程度、凹部８の深さは30〜40μｍ程度、先端面6S
の凹部側壁8Sの厚さ45〜35μｍ程度とし、変形ボンディ
ング部４の形状を規定する前記凹部８の側壁8Sにおける
対向する切り欠き部9A、9Bの間の残り幅は8A、8Bは各々
50μｍ程度、前記切り欠き部9A、9Bの深さは20〜30μｍ
程度とする。When using a normal 25 μmφ bonding wire, for example, the diameter of the capillary tip surface 6S is about 150 μmφ and the diameter of the wire insertion hole 7 is 35 μm.
mφ, the opening diameter of the recess 8 at the tip of the capillary is 60-80
μmφ, depth of the recess 8 is about 30-40 μm, tip surface 6S
The thickness of the recess side wall 8S is about 45 to 35 μm, and the remaining width between the notches 9A and 9B facing each other in the side wall 8S of the recess 8 that defines the shape of the deformation bonding portion 4 is 8A and 8B, respectively.
About 50 μm, the depth of the cutouts 9A, 9B is 20 to 30 μm
The degree.

【００２３】25μｍφのボンディングワイヤを用いた場
合、トーチ等による溶融でワイヤの先端に形成されるボ
ールの径は60〜80μｍφ程度になる。従って、このボー
ルを上記キャピラリー６先端面6Sでパッド上に押し潰す
場合、前記凹部８の側壁8Sが選択的に残留しせしめられ
ている8A、8Bの部分では、ボールはこの側壁8Sの残留部
分即ち残り幅8A、8Bの部分で押し潰されてボールはこの
側壁残留部分の下部へ、図１にＢで示されたように例え
ば 120〜150 μｍ程度の幅(B) に大きく伸び拡がり、前
記凹部側壁8Sに切り欠き部9A、9Bを形成した部分ではボ
ールが殆ど押し潰されないで図１にＡで示されたように
その方向にはボンディング部の幅は殆ど拡がらず、60〜
80μｍ程度当初のボール径に対応する狭い幅(A) が確保
される。When a 25 μmφ bonding wire is used, the diameter of the ball formed at the tip of the wire due to melting by a torch or the like is about 60 to 80 μmφ. Therefore, when the ball is crushed on the pad by the tip surface 6S of the capillary 6, the ball is left on the side wall 8S at the portions 8A and 8B where the side wall 8S of the recess 8 is selectively left. That is, the balls are crushed by the remaining widths 8A and 8B, and the ball is greatly expanded to the lower portion of the side wall remaining portion to a width (B) of, for example, about 120 to 150 μm as shown by B in FIG. The balls are hardly crushed at the portions where the notches 9A and 9B are formed in the recess side wall 8S, and the width of the bonding portion does not substantially expand in that direction as shown by A in FIG.
A narrow width (A) corresponding to the initial ball diameter of about 80 μm is secured.

【００２４】なお上記キャピラリーを用いた場合、上記
のように変形ボールボンディング部は、図１におけるＡ
の幅が80μｍ、Ｂの幅が 150μｍ程度の矩形に近い楕円
形状に形成されるので、ボンディング部のパッドとの接
触面積は 12000μｍ2 程度となり、円形接触面を有する
従来のボールボンディングにおいてボンディングの径を
120μｍφ程度(11300μｍ2)まで押し潰したのと同等程
度の十分に高いボンディング強度が得られている。When the above-mentioned capillary is used, the deformed ball bonding portion as described above is
The contact area with the pad of the bonding part is about 12000 μm 2 , because the contact area of the bonding part is about 12000 μm 2 , because the contact area is 80 μm and the width of B is about 150 μm. To
Sufficiently high bonding strength equivalent to that obtained by crushing to about 120 μmφ (11300 μm 2 ) is obtained.

【００２５】半導体装置においては、通常半導体チップ
の周辺部にその４辺に沿って複数のボンディングパッド
が配列形成される。そのためにボンディングパッド２の
配列方向は横(X) 方向と、縦(Y) 方向との２種類にな
る。従って前記変形ボールボンディング部４を狭い幅Ａ
に形成する方向が、横(X) 方向に沿って配列されたボン
ディングパッドと縦(Y) 方向に沿って配列されたボンデ
ィングパッドとで90度異なってくる。In a semiconductor device, usually, a plurality of bonding pads are arrayed and formed along the four sides of a peripheral portion of a semiconductor chip. Therefore, the bonding pads 2 are arranged in two types, a horizontal (X) direction and a vertical (Y) direction. Therefore, the modified ball bonding portion 4 has a narrow width A
The bonding pads arranged along the horizontal (X) direction and the bonding pads arranged along the vertical (Y) direction are different from each other by 90 degrees.

【００２６】そこで半導体チップを90度回転して新たに
位置合わせしてワイヤボンディングを行う手間を省き、
１回の位置合わせで縦方向及び横方向に配列されたボン
ディングパッド上への上記変形ボールボンディングを可
能にするには、図３の斜視模式図に示すように、前記実
施例の変形ボールボンディング用のキャピラリー６を切
り欠き部9A、9Bの向きが横方向に位置するように設置し
た横列用キャピラリー6Xと、前記キャピラリー６を切り
欠き部9A、9Bの向きが前後方向に位置するように設置し
た縦列用キャピラリー6Yをそれぞれ具備した２基のボン
ディングヘッドを有するワイヤボンディング装置を用い
ればよい。なお図中、10は超音波ホーンを示す。Therefore, the semiconductor chip is rotated 90 degrees to newly align and save the trouble of wire bonding,
In order to enable the above-mentioned modified ball bonding on the bonding pads arranged in the vertical direction and the horizontal direction in one alignment, as shown in the perspective schematic view of FIG. The capillary 6 for row is installed so that the notches 9A and 9B are oriented in the lateral direction, and the capillary 6 is installed so that the notches 9A and 9B are oriented in the front-rear direction. A wire bonding apparatus having two bonding heads each having the column capillaries 6Y may be used. In the figure, 10 indicates an ultrasonic horn.

【００２７】図４は本発明に係る半導体装置の一実施例
のワイヤボンディング面を模式的に示す平面図である。
この図に示されるように本発明に係る半導体装置におい
ては、例えば半導体チップ１の周辺部上に、チップ１の
４辺に沿って複数のボンディングパッド2XA 、2YA 、2X
B 、2YB がそれぞれ整列配設されている。FIG. 4 is a plan view schematically showing a wire bonding surface of an embodiment of the semiconductor device according to the present invention.
As shown in this figure, in the semiconductor device according to the present invention, for example, a plurality of bonding pads 2X A , 2Y A , 2X are provided on the peripheral portion of the semiconductor chip 1 along the four sides of the chip 1.
B and 2Y B are arranged side by side.

【００２８】そして、それぞれのボンディングパッドは
その配列方向に沿った幅ＡXA、ＡYA、ＡXB、ＡYBの幅を
それぞれ狭く形成することにより、ボンディングパッド
の配設密度を高め、且つパッドの高密度配置を阻害しな
い上記ボンディングパッドの配列方向に直交する方向の
幅ＢXA、ＢYA、ＢXB、ＢYBをそれぞれ十分に広く形成す
ることによって所要のボンディング強度の得られるボン
ディング面積の確保がなされている。このボンディング
パッド2XA 、2YA 、2XB 、2YB 等は通常Al若しくはその
合金の薄膜により形成される。By forming the widths A XA , A YA , A XB , and A YB along the arrangement direction of the respective bonding pads to be narrow, the disposition density of the bonding pads can be increased, and By sufficiently widening the widths B XA , B YA , B XB , and B YB in the direction orthogonal to the arrangement direction of the above-mentioned bonding pads that does not hinder high-density arrangement, it is possible to secure a bonding area that can obtain the required bonding strength. Has been done. The bonding pads 2X A , 2Y A , 2X B , 2Y B, etc. are usually formed of a thin film of Al or its alloy.

【００２９】またボンディングワイヤ（リード線）3A、
3B、3C等は上記ボンディングパッド上に、前記実施例に
示したワイヤボンディング方法あるいはワイヤボンディ
ング装置を用い、それぞれボンディングパッドの配列に
沿う方向でボンディングパッドからはみ出さないような
狭い幅を有し、ボンディングパッドの配列に直交する方
向で少なくとも前記パッド幅ＢXA、ＢYA、ＢXB、ＢYB以
上の幅をそれぞれ有する変形ボール4A、4B、4C等によっ
てボンディングされている。なお、図中の5A、5B、5C等
は図示しないパッケージやリードフレームの内部リード
に接続された第２ボンディング部を示す。またボンディ
ングワイヤ（リード線）3A、3B、3C等には従来同様にA
l、Au等が用いられる。Bonding wire (lead wire) 3A,
3B, 3C, etc., on the above-mentioned bonding pad, using the wire bonding method or wire bonding apparatus shown in the embodiment, each has a narrow width that does not protrude from the bonding pad in the direction along the arrangement of the bonding pad, Bonding is performed by deforming balls 4A, 4B, 4C, etc., each having a width of at least the pad widths B XA , B YA , B XB , B YB or more in the direction orthogonal to the array of bonding pads. In addition, 5A, 5B, 5C and the like in the drawing indicate the second bonding portions connected to the internal leads of a package or a lead frame (not shown). Also, for bonding wires (lead wires) 3A, 3B, 3C, etc.
l, Au, etc. are used.

【００３０】このような本発明にかかる半導体装置にお
いては、ボンディングパッドの配列方向に沿うボールボ
ンディング部の幅を従来に比べ縮小できるので、ボンデ
ィングパッドの配設密度を従来より高密度化することが
可能である。また前記のようにボールボンディングに際
し、ワイヤ先端に形成したボールが隣接してパッドが配
設されるパッド配列に沿う方向へは殆ど拡がらないの
で、この方向の変形ボールボンディング部４の幅Ａはほ
ぼ均一に形成され、ボンディング部の幅Ａのばらつきに
より、隣接するボンディング部同士、或いはボンディン
グ部と隣接するボンディングパッド間のショート障害は
防止される。In such a semiconductor device according to the present invention, the width of the ball bonding portion along the arrangement direction of the bonding pads can be reduced as compared with the conventional one, so that the arrangement density of the bonding pads can be made higher than the conventional one. It is possible. Further, as described above, at the time of ball bonding, the balls formed at the tip of the wire hardly spread in the direction along the pad arrangement in which the pads are arranged adjacent to each other. Therefore, the width A of the deformed ball bonding portion 4 in this direction is Due to the substantially uniform formation of the widths A of the bonding portions, short-circuit failures between adjacent bonding portions or between bonding pads and adjacent bonding pads can be prevented.

【００３１】更にまた、本発明に係る半導体装置におい
ては、上記のように隣接するワイヤボンディング部同士
或いはワイヤボンディング部と隣接するボンディングパ
ッド間のショート障害が防止されることから、該ショー
ト不良を除去する全数外観検査の工程が不要になり、製
造工数の削減が図れると同時に、製造歩留り及び信頼性
も向上する。Furthermore, in the semiconductor device according to the present invention, the short circuit failure between adjacent wire bonding portions or between the bonding pads adjacent to the wire bonding portion is prevented as described above, so that the short circuit defect is eliminated. This eliminates the need for a 100% visual inspection process, reducing the number of manufacturing steps and improving the manufacturing yield and reliability.

【００３２】[0032]

【発明の効果】以上説明したように本発明によれば、半
導体チップをパッケージ或いはリードフレーム等に接続
するワイヤボンディングのボンディング強度を損なわず
に半導体チップに形成されるワイヤボンディング用のパ
ッドの配設密度を高めることができると共に、ワイヤボ
ンディング位置のばらつき及びボンディング形状のばら
つきによる隣接ボンディング部間のショート障害が防止
されるので該ショート不良検出のための全数外観検査が
省略できる。As described above, according to the present invention, the arrangement of the wire bonding pads formed on the semiconductor chip without impairing the bonding strength of the wire bonding for connecting the semiconductor chip to the package, the lead frame or the like. The density can be increased, and a short circuit failure between adjacent bonding portions due to a variation in the wire bonding position and a variation in the bonding shape can be prevented, so that the total number of visual inspections for detecting the short circuit defect can be omitted.

【００３３】従って本発明は、高密度高集積化される半
導体装置の歩留り、信頼性の向上、及び製造工数の低減
に寄与するところが大きい。Therefore, the present invention largely contributes to improvement in yield, reliability, and reduction in manufacturing man-hours of semiconductor devices which are highly integrated in high density.

【図面の簡単な説明】[Brief description of drawings]

【図１】 本発明の原理を示す本発明の方法の一実施例
の斜視模式図FIG. 1 is a schematic perspective view of an embodiment of the method of the present invention showing the principle of the present invention.

【図２】 本発明に係るワイヤボンディング装置の一実
施例が具備するボンディングキャピラリーの模式図FIG. 2 is a schematic diagram of a bonding capillary included in an embodiment of a wire bonding apparatus according to the present invention.

【図３】 本発明に係るワイヤボンディング装置の他の
実施例が具備するボンディングキャピラリーの斜視模式
図FIG. 3 is a schematic perspective view of a bonding capillary included in another embodiment of the wire bonding apparatus according to the present invention.

【図４】 本発明に係る半導体装置の一実施例の模式平
面図FIG. 4 is a schematic plan view of an embodiment of a semiconductor device according to the present invention.

【図５】 従来のネールヘッド方式のワイヤボンディン
グ品の斜視模式図FIG. 5 is a schematic perspective view of a conventional nail head type wire bonding product.

【図６】 従来のボンディングキャピラリーの斜視模式
図FIG. 6 is a schematic perspective view of a conventional bonding capillary.

【図７】 従来のワイヤボンディング部の斜視模式図FIG. 7 is a schematic perspective view of a conventional wire bonding portion.

【図８】 従来の問題点を示す模式平面図FIG. 8 is a schematic plan view showing a conventional problem

【符号の説明】[Explanation of symbols]

１ 半導体チップ 2A、2B、2C ボンディングパッド ３ ボンディングワイヤ（リード線） ４ 変形ボールボンディング部 ５ 第２ボンディング部 ６ ボンディングキャピラリー ７ ワイヤ挿通孔 ８ 凹部 8S 凹部の側壁 9A、9B 切り欠き部 1 Semiconductor Chip 2A, 2B, 2C Bonding Pad 3 Bonding Wire (Lead Wire) 4 Deformed Ball Bonding Part 5 Second Bonding Part 6 Bonding Capillary 7 Wire Insertion Hole 8 Recess 8S Recess Sidewall 9A, 9B Notch

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】 一次元方向に並んで配設された複数のボ
ンディングパッド(2A,2B,2C)の各々にネールヘッド方式
によりリード線(3) のボンディングを行うに際して、 該リード線のボンディング部(4) を、該一次元方向で狭
い幅(A) を有し該一次元方向に直交する方向で広い幅
(B) を有する形状に形成することを特徴とするワイヤボ
ンディング方法。1. When a lead wire (3) is bonded to each of a plurality of bonding pads (2A, 2B, 2C) arranged side by side in a one-dimensional direction by a nail head method, the bonding portion of the lead wire is bonded. (4) has a narrow width (A) in the one-dimensional direction and a wide width in the direction orthogonal to the one-dimensional direction.
A wire bonding method, characterized in that the wire is formed into a shape having (B). 【請求項２】 ネールヘッド方式のワイヤボンディング
装置であって、 先端面(6S)に該先端面(6S)と同心の円形開孔面を有する
凹部(8) が設けられ、且つ該凹部(8) の側壁(8S)の対向
する２個所に該凹部(8) の内部から該キャピラリー(6)
の外面に達する切り欠き部(9A)(9B)が形成されてなるボ
ンディングキャピラリー(6) を具備せしめたことを特徴
とするワイヤボンディング装置。2. A nail head type wire bonding apparatus, wherein a concave portion (8) having a circular hole surface concentric with the distal end surface (6S) is provided on the distal end surface (6S), and the concave portion (8 ) At the two opposite sides of the side wall (8S) from the inside of the recess (8) to the capillary (6)
A wire bonding apparatus comprising a bonding capillary (6) having notches (9A) and (9B) reaching the outer surface of the wire. 【請求項３】 前記切り欠き部(9A)(9B)の対向方向が９
０度異なる２種類のボンディングキャピラリー(6) を具
備せしめてなることを特徴とする請求項２記載のワイヤ
ボンディング装置。3. The facing direction of the cutouts (9A), (9B) is 9
3. The wire bonding apparatus according to claim 2, wherein the wire bonding apparatus comprises two kinds of bonding capillaries (6) different by 0 degree. 【請求項４】 周辺部に辺に沿って複数のボンディング
パッド(2A 〜2C) が並んで配設された半導体チップ(1)
を有し、該ボンディングパッド(2A 〜2C) に対してネー
ルヘッドボンディングによってリード線(3) のボンディ
ングがなされる半導体装置において、 該リード線(3) のボンディング部(4) が、該ボンディン
グパッド(2A 〜2C) の配列に沿う第１の方向で狭い幅
(A) を有し該第１の方向と９０度異なる第２の方向で広
い幅(B) を有する形状に形成されていることを特徴とす
る半導体装置。4. A semiconductor chip (1) in which a plurality of bonding pads (2A to 2C) are arranged side by side along a side in a peripheral portion.
In the semiconductor device in which the lead wire (3) is bonded to the bonding pads (2A to 2C) by nail head bonding, the bonding portion (4) of the lead wire (3) is Narrow width in the first direction along the (2A to 2C) array
A semiconductor device having a shape having (A) and having a wide width (B) in a second direction different from the first direction by 90 degrees.
JP6134394A 1994-06-16 1994-06-16 Wire bonding method and its device and semiconductor device Pending JPH088290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6134394A JPH088290A (en) 1994-06-16 1994-06-16 Wire bonding method and its device and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6134394A JPH088290A (en) 1994-06-16 1994-06-16 Wire bonding method and its device and semiconductor device

Publications (1)

Publication Number Publication Date
JPH088290A true JPH088290A (en) 1996-01-12

Family

ID=15127379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6134394A Pending JPH088290A (en) 1994-06-16 1994-06-16 Wire bonding method and its device and semiconductor device

Country Status (1)

Country Link
JP (1) JPH088290A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7279706B2 (en) 2003-10-07 2007-10-09 Renesas Technology Corp. Semiconductor device with electrode pad having probe mark

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7279706B2 (en) 2003-10-07 2007-10-09 Renesas Technology Corp. Semiconductor device with electrode pad having probe mark
US7524684B2 (en) 2003-10-07 2009-04-28 Renesas Technology Corp. Semiconductor device with electrode pad having probe mark

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