JPH0878341A - Apparatus and method for manufacture of semiconductor film - Google Patents

Abstract

PURPOSE: To eliminate an abnormal discharge and a discharge stop when a semiconductor film is formed at high speed by a method wherein, out of the surface of a microwave-transmitting member used to introduce microwaves, the surface temperature of a part exposed to a plasma and the inner-wall-surface temperature of a film- formation chamber other than the microwave-transmitting member are controlled properly. CONSTITUTION: Out of the surface of a microwave-transmitting member 217 used to introduce microwaves, the surface temperature of a part exposed to a plasma is maintained to be lower than the crystallization temperature of a semiconductor film. In addition, cutoff structures 218 which cut off the influence of cooling jackets 201 to 204 are arranged so as to come into close contact with the microwave- transmitting member 217, and the inner-wall-surface temperature T deg.C of a film- formation chamber other than the microwave-transmitting member 217 is maintained within a range of 100<=T<=[film-formation temperature of substrate]. Thereby, it is possible to obtain the manufacturing apparatus, of the semiconductor film, by which an abnormal discharge and a discharge stop are not generated and which can maintain a stable discharge for many hours.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor film manufacturing apparatus and a manufacturing method thereof. More specifically, the present invention relates to an apparatus for producing a semiconductor film and a method for producing the same, which can sustain stable discharge for a long time without abnormal discharge or discharge stoppage even when high-speed film formation is performed. In particular, a semiconductor film whose electric resistance depends on temperature, such as amorphous silicon (abbreviated as "a-Si: H") or amorphous silicon germanium ("a-S").
iGe: H ”) and the like are suitably applied to the production of a solar cell formed from a thin film.

[0002]

2. Description of the Related Art Recently, due to the demand for higher performance and lower cost of semiconductor devices, high-speed film formation, continuous stable discharge, and large area are also required in plasma CVD apparatuses.

In particular, the microwave plasma CVD method has attracted attention from the viewpoint of high speed film formation. Its features are the following three points. (A) Since the frequency is higher than that of the conventional RF, the microwave can increase the electron density of the plasma, and the plasma can be efficiently generated and sustained. (B) Lower pressure (10 ^-4 Torr) than conventional CVD equipment
It is possible to generate plasma on a table. (C) When forming an a-Si: H film, high-speed film formation is possible while suppressing the generation of powder such as polysilane.

As an apparatus having the above-mentioned features, for example, a so-called CDE (chemical dry etching) apparatus described in Japanese Patent Publication No. 54-03344 is applied to a CVD method (abbreviated as "CDE apparatus"). be able to.

FIG. 4 shows an example of a CDE apparatus, which is a magnetron 41, an isolator 42, a power meter 43, a tuner 44, a source gas introduction tube 45, a discharge tube 46, and a film forming chamber 4.
7, a substrate 48, a vacuum pump 49, and a source gas 50. The discharge tube 46 is arranged so as to penetrate a waveguide orthogonal to the traveling direction of microwaves.

The procedure of the film forming method using the above CDE apparatus will be described below. (1) A predetermined amount of raw material gas 50 is introduced into the discharge tube 46 through the raw material gas introduction pipe 45. (2) The discharge tube 4 is exhausted by the vacuum pump 49.
6 Keep the inside pressure at the specified level. (3) Microwave power is applied to the source gas from the magnetron 41 via the isolator 42, the power meter 43, the tuner 44, and the discharge tube 46. As a result, the discharge tube 4
A plasma is generated inside 6. (4) Subsequent to the plasma generation in (3) above, the substrate 48 preheated by setting a predetermined microwave power using the power meter 43.
A film is formed on the surface of.

As another apparatus having the above-mentioned features, there is, for example, a so-called ECR (electron cyclotron resonance) plasma deposition apparatus described in Japanese Patent Publication No. 62-43335. In this ECR device, electromagnets are concentrically arranged around a cylindrical cavity resonator provided with a microwave introduction window, and high-speed plasma processing is performed at a pressure of several mTorr. Since the electrons in the plasma have a cyclotron motion due to the magnetic field, they can operate at a pressure considerably lower than that of the CDE device.

However, in the CDE device, the a-S
Forming a semiconductor film of i: H, a-SiGe: H, or the like causes the following problems. (1) When the material of the discharge tube is quartz, the semiconductor film adhering to the inner wall of the discharge tube is crystallized and the microwave power is almost reflected, so that the discharge cannot be maintained. (Problem of "reflection loss") (2) If the material of the discharge tube is alumina ceramics,
The semiconductor film adhering to the inner wall and the alumina / ceramics tube itself absorb microwave power, and the ceramic tube is damaged or cracked due to a rapid temperature rise. (Problem of "absorption loss") On the other hand, in the ECR device, a-Si: H, a-SiG
Forming a semiconductor film of e: H or the like causes the following problems. (1) Two problems in the above CDE device occur in the microwave introduction window. (2) Since the semiconductor film adheres to the inside of the cavity resonator, the discharge becomes unstable or the discharge cannot be started.

In order to solve the former problem of reflection loss / absorption loss of microwave power, a method of cooling the discharge tube or the microwave introduction window has been proposed. Examples thereof include JP-A-63-130784 and JP-A-63-2.
No. 31838, but the problem of discharge stability cannot be solved even after such measures. Therefore, it has been desired to develop a technique for ensuring the stability of discharge.

[0010]

SUMMARY OF THE INVENTION The present invention provides a-Si: H, a-SiG in a microwave plasma CVD method.
An object of the present invention is to provide a method and an apparatus for manufacturing a semiconductor film in which, when a semiconductor film such as e: H is formed at a high speed, there is no abnormal discharge or discharge stop and stable discharge can be sustained for a long time.

[0011]

A semiconductor film manufacturing apparatus of the present invention is a double-chamber type semiconductor film using a microwave plasma CVD method and comprising a vacuum container and a film forming chamber built in the vacuum container. In the manufacturing apparatus of 1., a microwave introducing window is provided on the side wall of the film forming chamber, a microwave transmitting member is provided in the microwave introducing window, and cooling means is provided in close contact with the periphery of the microwave transmitting member. It is characterized in that a heat insulating member is provided in close contact with at least all the portions exposed to the inside of the film forming chamber around the cooling means.

The method for producing a semiconductor film according to the present invention is a microwave transparent member used for introducing microwaves in a method for producing a semiconductor film in which electric resistance is temperature dependent, using a microwave plasma CVD method. The surface temperature of the portion of the surface exposed to the plasma is kept lower than the crystallization temperature of the semiconductor film by the cooling means, and the heat insulating structure for blocking the influence of the cooling means is provided with the microwave permeable material. The inner wall surface temperature T ° C. of the film forming chamber other than the microwave permeable member is set at 10 ° C. by being closely arranged to the member.
It is characterized in that it is maintained in the range of 0 ° C. ≦ T ≦ [deposition temperature of substrate].

[0013]

First, when the inventor manufactures a semiconductor film (a-Si: H, a-SiGe: H, etc.) whose electric resistance depends on temperature by the plasma CVD method, only the microwave introduction window is cooled. The effect was examined. However, as described below, it was found that the above problem cannot be solved by merely cooling the microwave introduction window. That is, it was found that the following problems occur when the cooling capacity is increased to reduce the reflection loss and absorption loss of the microwave introduction window. (1) When the inner wall of the film forming chamber to which the semiconductor film is attached is cooled, electric discharge is unlikely to occur. (2) Instantaneous arc discharge (spark) during glow discharge
And discharge is frequently generated. (3) Once the discharge is cut off, re-discharge becomes difficult.

Therefore, the inventor has conducted further research based on the above findings, and of the surface of the microwave permeable member used for introducing the microwave, the surface temperature of the portion exposed to the plasma and the microwave transmission. By properly controlling the inner wall surface temperature T ° C. of the film forming chamber other than the elastic member, it is possible to avoid the situation described in the reflection loss and significantly improve the situation described in the absorption loss. I found it.

[0015]

Embodiments Embodiments of the present invention will be described below.

(Microwave plasma CVD method) When one or several kinds of a certain gas (a substance having a boiling point below room temperature) is placed in a container and heated to a high temperature, a reaction occurs depending on the kind of the gas, and a substance having a low vapor pressure is generated. To generate. This is chemical vapor deposition (abbreviated as CVD).
This is a process of growing a thin film, and a film forming method utilizing this growth method is a CVD method.

Furthermore, by using an apparatus in which a CVD apparatus is combined with an apparatus for discharging (for example, a high frequency power source of 13.56 MHz), the above gas is turned into plasma, so that a thin film can be formed even at a low temperature. The method is a plasma CVD method.

If an electromagnetic wave of a higher frequency is used instead of the 13.56 MHz high frequency power source, the distance between the electrodes can be reduced, and therefore the discharge can be performed in a smaller container. As this frequency, 2.
CVD performed using 54 GHz is performed by microwave plasma C
It is called the VD method.

(Double chamber system consisting of a vacuum container and a film forming chamber built in the vacuum container) A double chamber system comprising a vacuum container and a film forming chamber built in the vacuum container according to the present invention is, for example, as shown in FIG. I layer forming container 35 shown in FIG.
2. The i-layer forming container 352 is composed of a vacuum container through which the belt-shaped substrate penetrates and a film forming chamber built in the vacuum container. In the case of FIG. 3, one surface of the film forming chamber has a structure in which the above-mentioned strip-shaped substrate plays the role, and the strip-shaped substrate moves in the longitudinal direction, so that a desired thin film is formed on one surface of the strip-shaped substrate. Can be formed.

FIG. 1 is a schematic exploded perspective view showing the film forming chamber. Here, in order to make it easy to understand the inside, there are some portions that are drawn from a predetermined position by being displaced, broken or partially omitted.

In FIG. 1, 101 is a strip-shaped substrate, and 102 is
Is a deposition chamber (indicated by a thick line), 103 is a microwave applicator, 104 is a rectangular waveguide, 105 is a circular waveguide, 1
06 is a microwave introduction window, 107 is a cooling jacket, 1
Reference numeral 08 is a heat insulating member, 109 is a bias voltage application electrode (hereinafter abbreviated as bias electrode), 110 is a stabilized DC power supply, and 11
1 is a gas introduction pipe, 112 is a gas introduction port, 113 is a gas reservoir, 114 is a gas blowing plate, 115 is a gas nozzle,
116 is a gas exhaust port, 117 is a microwave leakage prevention plate,
Reference numeral 118 is a deposition preventive plate, and 119 is a pressure measurement hole. The above parts are generally fixed with screws or bolts.

(Microwave introduction window) Examples of the microwave introduction window in the present invention include those shown in FIG. FIG. 2 is a schematic exploded perspective view of the microwave introduction window 106.

In FIG. 2, 201 to 204 are cooling jackets, 205 to 214 are refrigerant passages, 215 are through holes,
216 is a screw hole, 217 is a microwave transmitting member, 218
Is an adiabatic structure.

(Cooling Means) As the cooling means in the present invention, for example, the cooling jackets 201 to 2 shown in FIG.
04 is mentioned.

In FIG. 2, a cooling medium passage is bored in each cooling jacket, and the cooling jackets 202 to
204 has almost the same structure. However, the cooling jacket 204 is different from the others in that an elongated groove is formed in a portion between the refrigerant passages 209 to 210. The cooling jacket 201 is provided with a joint for sending the refrigerant from the outside of the film forming chamber and returning it to the outside of the film forming chamber again. In addition, a portion of the surface of the cooling jacket 201, which comes into pressure contact with the cooling jacket 204, has a blind structure in which a refrigerant passage that has been previously drilled is closed.

In FIG. 2, O-rings and O-ring grooves are provided in the refrigerant passages 205 to 214. Then, by fastening a screw to the screw hole 216 through the through hole 215, the O-ring is pressed and the refrigerant passage between the adjacent cooling jackets becomes a watertight structure. With such a structure, the refrigerant reaches 209 from the refrigerant passage 205 in the numerical order, reverses the direction of flow through the elongated groove, and reaches the 214 from the refrigerant passage 210 in the numerical order. The microwave permeable member 217 is cooled with such a flow path configuration.

In FIG. 2, the microwave transmitting member 217 is shown.
The conditions for cooling the temperature of the surface exposed to the plasma to a desired crystallization temperature of the semiconductor film or less are as follows.

The materials of the microwave transmitting member and the cooling jackets 201 to 204 have high thermal conductivity. Microwave transmission member and cooling jackets 201-204
Good thermal contact with.

Further, the cooling jacket is a part of the microwave reflecting member and must also have a function of preventing the microwave from leaking to the outside of the film forming chamber.

Therefore, as the material of the cooling jacket,
For example, metals such as aluminum and copper / silver are preferable.

Further, in order to improve the above-mentioned thermal contact, each contact surface is not scratched or distorted and has good flatness, foreign matter such as dust is not included in the contact surface, and silicon grease or aluminum is used. It suffices to interpose a foil or the like on the contact surface.

(Microwave Transmissive Member) The microwave transmissive member in the present invention has, for example, a high thermal conductivity and a low microwave absorptivity, that is, a dielectric loss tangent tan.
Select a material with a small δ (tan delta). At the same time, a material having a large thermal shock fracture coefficient is desirable. For example, Be
Ceramics such as O, Al ₂ O ₃ , AlN and BN can be mentioned. The cooling capacity takes into consideration the amount of heat generated inside the microwave introduction window, the amount of heat that flows in, and the amount of heat that escapes to the outside. The amount of heat generated inside is determined by the microwave power to be introduced and the dielectric loss tangent tan δ (tan delta) of the microwave introduction window. The amount of heat that flows in is determined by the amount of heat generated by the dissociation reaction of the source gas and the ion irradiation by applying a bias voltage. Furthermore, most of the heat transfer path that escapes to the outside is a portion that is in mechanical contact with the microwave introduction window, and is in the form of heat conduction. Therefore, it is easy to experimentally determine the cooling capacity.

(Heat Insulating Member) As the heat insulating member in the present invention, for example, the heat insulating structure 218 shown in FIG. 2 can be cited. The heat insulating structure 218 includes the cooling jackets 201 to 2
04, refrigerant passages 205 and 214, and cooling jacket 20
It is applied to the pipe connecting 1 and 1. Heat insulating structure 21
8 is a function of narrowing the amount of heat that can be passed, that is, a thermal conductance is reduced by putting a known heat insulating material inside, increasing the number of boundaries (increasing the number of parts), and reducing the thermal contact area. Must have functionality. Figure 2
In the case of the heat insulating structure 218 shown in FIG.
Each of them is a bent stainless steel product having a poor thermal conductivity, and due to its springiness, the first stage is in pressure contact with the cooling jacket and the second stage is in pressure contact with the first stage.

(Semiconductor Film) Examples of the semiconductor film in the present invention include Si-based thin films having an amorphous structure. In particular, when manufacturing a photovoltaic element represented by a solar cell, a structure including a pin junction is formed using a thin film such as a-Si: H or a-SiGe: H. In addition, in order to increase power generation efficiency, the pin junctions may be stacked in multiple stages.

(Keeping the surface temperature of the portion of the microwave permeable member used for introducing microwaves exposed to plasma lower than the crystallization temperature of the semiconductor film by cooling means) Of the surface of the microwave permeable member used for introducing, the surface temperature of the portion exposed to the plasma is kept lower than the crystallization temperature of the semiconductor film by the cooling means. "
When i: H or a-SiGe: H is formed, the film adhering to the microwave introduction window has a strong film stress due to crystallization and damages the microwave introduction window, or the electrical resistance can be measured with a tester. This is a necessary condition for avoiding the problem that the film becomes a low resistance film (several ohms to hundreds of kilohms) and totally reflects microwave power. Plasma CVD
In the method, the crystallization temperature forms a certain region depending on the film forming conditions such as the mixing ratio of hydrogen, the gas flow rate to be introduced, microwave power, and pressure. In any case, in order to avoid the damage of the microwave introduction window and the total reflection of the microwave power due to the crystallization, it is desirable to suppress the crystallization by an appropriate cooling means.

(Maintaining the inner wall surface temperature T ° C. of the film forming chamber other than the microwave transparent member within the range of 100 ° C. ≦ T ≦ [film forming temperature of the substrate]) Film forming other than the microwave transparent member As the temperature T of the inner wall surface of the chamber, a lower limit value is determined to facilitate the start of discharge. The start of discharge also includes the case of re-discharging after the discharge is interrupted. In addition, the above predetermined temperature T
The upper limit of is necessary for precise temperature control of the substrate. In particular, it is important when a belt-shaped substrate having a small heat capacity is continuously conveyed in one direction, as in the roll-to-roll method. The reason is that the strip-shaped substrate is adjusted to an optimum film-forming temperature immediately before entering the film-forming chamber. Therefore, when heat is radiated from the wall surface of the film-forming chamber, the strip-shaped substrate becomes closer to the outlet side of the film-forming chamber. This is because the temperature rises.

The other main parts of the film forming apparatus used in the present invention will be described below.

(Applicator) Examples of the applicator in the present invention include the applicator 103 shown in FIG.

The inner diameter of the circular waveguide 105 forming the applicator 103 is selected so as to be a circumscribed circle of the substantially rectangular waveguide 104. For example, set the inner diameter of a circular waveguide to φ
98-φ101mm, the inner size of the rectangular waveguide is 96 × 27m
m or 109.2 × 54.6 mm, 72 × 34 mm. The two applicators 103 are arranged so as to face each other, and are arranged so that their rotation axes (hereinafter, referred to as X axes) match each other. Here, the X axis is substantially parallel to the strip substrate 101. The projection of the X-axis onto the strip-shaped substrate is substantially orthogonal to the transport direction of the strip-shaped substrate (hereinafter referred to as the Y-axis). Further, the X axis is parallel to the side wall of the prismatic film forming chamber 102.

In the rectangular waveguide 104 which constitutes the applicator 103, the microwave is square TE.
Propagation in the ₁₀ (= H ₁₀ ) mode and the circular waveguide 105
At, the wave propagates in the circular TE ₁₁ (= H ₁₁ ) mode. Further, the mode is converted by the shape of the microwave transmitting member 217, and it becomes complicated including the higher order modes.

On the other hand, regarding the plane of polarization, the rectangular waveguide 10
4. In the circular waveguide 105, all are linearly polarized waves,
Depending on the shape of the microwave transmitting member 217, it may have a complicated appearance.

Further, in this embodiment, the applicator 1
Two microwave oscillators (not shown) for introducing microwave power to 03 have continuous oscillation and a ripple rate of less than 3% and oscillate a microwave of 2.45 GHz. A waveguide is interposed between each of the two microwave oscillators, and an isolator, a directional coupler (power meter), a tuner, and an applicator 103 are connected in this order from the oscillator side. Then, the microwave power is monitored by the power meter from each microwave oscillator to each applicator 1
It is introduced from both sides of the film forming chamber 102 through 03.

(Circular Dielectric Window) As the circular dielectric window in the present invention, for example, the applicator 10 shown in FIG. 2 is used.
3 includes a circular dielectric window (not shown) incorporated therein.
In this case, the circular dielectric window has two functions of microwave introduction and vacuum sealing. In order to prevent thermal deterioration (cracking, destruction) of the circular dielectric window due to the introduction of microwaves,
It is preferably cooled uniformly. Specifically, cooling air may be blown directly onto the atmosphere-side surface of the circular dielectric window to cool it, or a coolant such as water or Freon may be flowed to cool the applicator 103, and the circular dielectric window and the applicator It may be indirectly cooled by heat conduction.

When this circular dielectric window is exposed to plasma, the material is as follows: thermal shock destruction coefficient = large, thermal expansion coefficient = small, microwave power absorption (ε _r tan δ) =
Small, mechanical strength = large, ion recombination coefficient = small, resistant to plasma, capable of manufacturing φ100 mm or more, relatively inexpensive, etc. must be satisfied, and especially a-Si : When forming an H film, the condition that the thermal conductivity is good is added. Specific materials include, for example, Al ₂ O ₃ , BeO, MgO, ZrO, Si.
Fine ceramics such as N, SiC, BN and quartz can be used.

Further, the circular dielectric window may have a one-piece construction or a two-piece construction having a close contact as proposed by the present applicant (Japanese Patent Laid-Open No. 63-145781).

(Bias Electrode) As the bias electrode in the present invention, for example, the bias electrode 109 having a T-shaped rod-like structure on the X axis shown in FIG. 2 can be mentioned. In this case, the distance between the end of the bias electrode 109 and the circular dielectric window 901 is preferably 10 to 55 mm. When the distance is 30 mm, the size of the bias electrode main part is φ12 mm × length 420 mm.

The bias electrode 109 is formed in the film forming chamber 102.
Penetrates through the bottom surface and is electrically insulated from the bottom surface. Further, a DC stabilizing power supply 110 or a high frequency power supply is connected to the bias electrode 109 outside a vacuum container (not shown). In particular, a metal sleeve is provided coaxially in the portion penetrating the film forming chamber 102, and the metal sleeve and the bias electrode 109 are insulated from each other to prevent abnormal discharge. Deposition chamber 1
At a position outside 02 and inside the vacuum container, an EMI shield is provided by making it coaxial or wrapping it with a copper foil if necessary.

By applying a bias voltage to the bias electrode 109, the energy of the ions attracted to the belt-shaped substrate 101 during film formation is controlled. Then, the amount of ions is monitored by the bias current.

The bias electrode 109 may be made of any material as long as it does not contaminate the deposited film when used in the glow discharge state. For example, SUS, Ni, etc. are suitable.

(Strip-shaped substrate) The strip-shaped substrate in the present invention includes, for example, the one shown in FIG. The belt-shaped substrate 101 is a microwave reflector and constitutes the upper lid of the rectangular parallelepiped film forming chamber 102. Here, since the width of the strip-shaped substrate 101 is smaller than the length of the film forming chamber 102 in the X-axis direction, a microwave leakage prevention plate 117 that prevents microwave and plasma leakage is installed at the end of the film forming chamber 102. Has been done. The function of the microwave leakage prevention plate 117 is to increase the pressure in the film forming chamber and facilitate discharge generation.
It is to prevent the leakage of plasma, stabilize the discharge, prevent the leakage of microwaves, and ensure safety.

In this embodiment, the prismatic film forming chamber 102 is used.
Size is 220mm (D) × 140mm (H) × 4
Strip substrate 10 having a width of 80 mm (W) and a width of 400 mm
Can handle 1.

In order to form a uniform film in the width direction of the strip-shaped substrate, the gas flow and the bias voltage are applied uniformly.

As a means for uniformly introducing the source gas into the film forming chamber 102, a gas introducing pipe 111 and a gas introducing port 1 are provided.
12, a gas blowing plate 114, and a gas nozzle 115 are provided. As the gas flow, the source gas blown upward by the gas nozzle 115 is a gas exhaust port 1 on the perforated plate which is the side wall of the film forming chamber 102 by the action of a vacuum pump (not shown).
It is discharged to the outside of the film forming chamber 102 via 16. Also,
An exhaust conductance varying mechanism (not shown) is installed between the gas exhaust port 116 and the vacuum pump.

In this embodiment, the strip substrate 101 is transported by the transport mechanism shown in FIG. In particular, the transport rollers (see 336 to 346 in FIG. 3) are brought into contact with only the non-film-forming surface (the upper surface in the figure) of the strip substrate 101. Specifically, similar to the one proposed in US Pat. No. 4,485,125, a magnet is formed on the upper surface of a strip-shaped substrate 101 made of a ferromagnetic material (for example, ferritic stainless steel such as SUS430).
The rollers are brought into close contact with each other, and the magnetic force causes the belt-shaped substrate 101 to be suspended in a catenary shape. In this case, it becomes possible to carry the sheet with the minimum tension.

The suspending shape of the belt-like substrate is the fastest fall even in a part of the cardioid, as long as it is within the limit value that the tension is strengthened to deform the belt-like substrate and the transport roller and the steering mechanism described later does not work. It may be a line or an arc.

A plurality of permanent magnets are incorporated inside the magnet roller. The permanent magnet has a Curie point higher than the temperature of the strip-shaped substrate and has a magnetic force such that magnetic lines of force penetrating the ferromagnetic strip-shaped substrate do not affect the plasma.

(Adhesion-Preventing Plate) Examples of the adhesion-preventing plate in the present invention include those shown in FIG. Protective plate 1
Reference numeral 18 denotes a film-forming chamber 102 on both sides, immediately before the strip-shaped substrate 101 enters the film-forming chamber 102, and the strip-shaped substrate 101 being the film-forming chamber 10.
It is installed at the position immediately after exiting from 2. Note that FIG. 1 illustrates only the former.

The function of the deposition preventive plate 118 is that the deposition chamber 102 is
That is, the deposited film is not formed on the strip substrate 101 in the peripheral region other than the above. Actually, the gas exhaust port 116
A deposited film is formed on the belt-shaped substrate 101 even outside the film formation chamber 102 by a few radicals contained in the gas discharged from the film. This deposited film is quite thin, but when a multilayer film is formed by a roll-to-roll type film forming apparatus, which will be described later, it is a part corresponding to the interface that influences the electrical characteristics, and precise film quality control is possible. is necessary. Therefore, it is necessary to prevent the deposited film from being formed outside the film forming chamber 102 where it is difficult to control the film quality.

The deposition preventing plate 118 is a component having such a function. Therefore, as long as it has such a function, the shape of the deposition preventing plate 118 is not limited. For example, it may be a flat plate as shown in FIG. 1, or may be a curved surface or a bent plate.
In particular, when a gas of 1.5 slm or more is flown for high-speed film formation at a discharge pressure of less than 10 mTorr, a large exhaust conductance is required. The size of the deposition preventive plate depends on the film forming conditions, the size of the gas exhaust port 116, the size of the exhaust port (not shown), and the like, and is adjusted accordingly.

Further, in the film forming chamber, reference numeral 119 is a pressure measuring hole provided on the surface facing the deposition preventing plate 118, and the hole is a pipe through which an intrinsic semiconductor layer forming container 352 (FIG. 3) is formed.
See)) and is connected to the absolute pressure gauge.

The film forming apparatus used in the present invention will be described below with reference to FIG.

(Roll-to-roll type plasma CVD
Apparatus) As the roll-to-roll type plasma CVD apparatus in the present invention, for example, the one shown in FIG. 3 can be mentioned. Hereinafter, the i-type semiconductor layer is abbreviated as the i layer, and the doped semiconductor layer is abbreviated as the doped layer.

In FIG. 3, reference numeral 301 denotes a substrate delivery container,
302 is a first dope layer forming container, 303 is a second dope layer forming container, 304 is a substrate winding container, 305 to 309 are temperature control mechanisms, 310 to 313 are gas gates, 314 to 3
20 is a vacuum gauge, 321 to 327 are gas introduction pipes, 328 to
332 is a gas exhaust port, 333 is a delivery bobbin, 334 is a belt-shaped substrate, 335 is a take-up bobbin, 336 to 346 are transport rollers, 347 and 348 are high frequency oscillators, 349 to.
351 is a film forming chamber, and 352 is an i layer forming container.

Roll-to-roll type plasma C of FIG.
The VD apparatus 300 is generally composed of a film forming chamber, a source gas introducing means, a gas separating means, an exhausting means, a conveying means, a power inputting means, and a substrate temperature adjusting means. And this roll
The two-roll type plasma CVD apparatus 300 can form a single cell semiconductor thin film of a pin type photovoltaic element.

(Film Forming Chamber) As the film forming chamber in the present invention, for example, the film forming chamber 350 shown in FIG. 3 can be cited.
The film forming chamber 350 has a structure in which three film forming chambers 102 shown in FIG. 1 are arranged in parallel. The film forming chambers 349 and 351 are RF plasma CVD reaction furnaces (not shown). These film forming chambers 3
In 49 to 351, the internal pressure is adjusted to vacuum gauges 314 to 320.
To monitor.

A high frequency power having a frequency of 13.56 MHz or 100 kHz introduced into the film forming chambers 349 and 351 is used. Here, the high frequency power supplies 347 and 348 are not limited to the above-mentioned frequencies, and may be 50 kHz to 10 kHz.
Any one up to GHz may be used. However, when a frequency other than the above is used, the film forming conditions need to be appropriately adjusted. Especially when selecting a frequency of 50 MHz or higher,
The pressure is preferably 5 to 20 mTorr.

The microwave introduced into the film forming chamber 350 is not particularly limited as long as it is of a continuous oscillation, low ripple type in the microwave band.

(Web Gate) Examples of the web gate according to the present invention include those shown in FIG. The web gate is a mechanism similar to a square opening gate valve in which a strip-shaped substrate is sandwiched from above and below by an elastomer and vacuum-sealed. This web gate is useful for exchanging strip substrates and maintaining the deposition chamber.

In particular, when a large number of film forming chambers are provided and the maintenance timings thereof deviate in time, such as an apparatus having nine film forming chambers for manufacturing a triple photovoltaic element, the atmosphere is opened. This has the effect of preventing a decrease in the operating rate of the device. Specifically, opening to the atmosphere requires procedures such as cooling of a strip substrate, introduction of dry nitrogen, and opening to the atmosphere.
On the other hand, re-deposition requires another procedure such as evacuation, introduction of raw material gas, heating of the belt-shaped substrate, and pre-deposition,
After all, it takes 5 to 6 hours to carry out these series of procedures. If these series of procedures are to be executed at different timings for each film forming chamber, continuous integrated production cannot be expected, and as a result, the production yield will be reduced.

The size of the web gate is a structure having an opening wider than the width of the strip-shaped substrate, and it is sufficient if the web-shaped substrate can easily pass through.

This web gate can be vacuum-sealed with a low leakage amount by using ordinary fluororubber as an elastomer if the thickness of the belt-shaped substrate is 0.3 mm or less. Although the elastomer is not limited to fluororubber, it has elasticity and a low leakage amount, does not damage the edge of the strip substrate, and does not increase the leakage amount when the web gate is repeatedly opened and closed. It is necessary to satisfy that condition.

The arrangement of the web gates is a pair at a position adjacent to the gas gates 310 and 313 in FIG.
It is desirable to provide a pair at a position adjacent to the gas gates 311 and 312. That is, the former is an arrangement for exchanging the roll of the belt-shaped substrate, and the latter is an arrangement for maintenance of the inside of the i-layer forming container. Here, since the film forming rate is low in the first dope layer forming container and the second dope layer forming container and the film forming rate of the i layer forming container 352 is high, the frequency of maintenance of the i layer forming container 352 is increased and the i layer forming container 352 is produced at the same time. It was made possible to suppress the decrease in the yield of.

(Conveyance of Strip Substrate) As the conveyance of the strip substrate in the present invention, for example, the one shown in FIG. 3 can be mentioned. The strip substrate 334 has one end thereof wound up on the bobbin 33.
5, the winding bobbin 335 is attached to the substrate winding container 30.
4 is conveyed by being driven from the outside. The tension of the belt-shaped substrate 334 is generated by applying a force to the feeding bobbin 333 in the direction opposite to the conveying direction. The means is
It suffices to act from the outside of the substrate delivery container 301 via a clutch. A powder clutch is preferable as the clutch.

Next, a method of manufacturing a photovoltaic element using the roll-to-roll type plasma CVD apparatus 300 of FIG. 3 will be described in the order of steps.

(Step 1: Attachment of Strip Substrate Having Completed Predetermined Cleaning) The strip substrate wound around the feeding bobbin 333 is attached at a predetermined position, and while feeding the feeding bobbin 333, the gas gate 310 and the first dope layer are formed. Container, gas gate 311, microwave plasma CVD apparatus, gas gate 312, second dope layer forming container 303, gas gate 3
All the upper lids of 13 are opened, and the strip-shaped substrate is passed through in this order. Then, the end portion of the strip-shaped substrate is fixed to the winding bobbin 335, and preparation is made so that the strip-shaped substrate can be wound by the winding bobbin 335. At this time, it is confirmed that all the transport rollers 336 to 346 are in contact with the non-film-forming surface of the strip substrate.

(Step 2: Conveyance, Confirmation of Conveyance, and Stopping Conveyance of Strip Substrate in the Atmosphere) After the attachment of the strip substrate is completed,
In the atmosphere, it is confirmed whether or not the belt-shaped substrate driving means such as the winding bobbin rotating mechanism (not shown) and the supporting / conveying roller driving mechanism (not shown) continuously conveys the belt-shaped substrate without any trouble. Here, it is preferable that the belt-shaped substrate driving means has both a forward movement function and a backward movement function, and it is preferable that the belt-shaped substrate drive means be provided with an indicator of the amount of feeding of the belt-shaped substrate.

After confirming that the belt-shaped substrate can be conveyed without any trouble, the belt-shaped substrate is returned to the initial setting position and stopped at that position while monitoring the indicator of the amount of feeding the belt-shaped substrate.

(Step 3: Evacuation of the vacuum container having the belt-shaped substrate and the conveying means) The upper lid of each vacuum container having the belt-shaped substrate and the conveying means is closed, and each vacuum container is evacuated by each vacuum pump. Especially for the film forming chamber 350, a rotary pump and a mechanical booster pump are used.
^The pressure inside the film formation chamber was 6 × 10 ^-6 Torr by the procedure of roughing to around ^-3 Torr and then main pulling with an oil diffusion pump.
Exhaust continuously until reaching.

(Step 4: Introduction of raw material gas into film forming chamber) Mixing panel (not shown) for performing precise control of gas mixing and gas flow rate from a gas cylinder (not shown) through a stainless pipe (not shown). ) To the gas introduction pipes 321 to 321 and the raw material gas whose mass flow controller (not shown) in the mixing panel controls the gas to a predetermined flow rate.
23 is introduced into the film forming chambers 349 to 351. At this time, the exhaust capacity of the vacuum pump and the exhaust conductance of the exhaust pipe are selected in advance so that the pressure in the film forming chambers 349 to 351 becomes a predetermined value.

(Step 5: Temperature Control of Strip-shaped Substrate) While flowing the source gas, the temperature of the strip-shaped substrate is adjusted to a predetermined temperature by a temperature control mechanism (not shown). Here, plasma CVD using RF
In the microwave plasma CVD apparatus, the electron density and the electron temperature are both higher than those in the apparatus, and therefore the temperature of the belt-shaped substrate is likely to rise due to the heat from the plasma. In addition, the equilibrium temperature of the strip-shaped substrate is determined according to the microwave power supplied when the temperature control mechanism is not activated. For example, the equilibrium temperature under the conditions of Table 1 is as shown in Table 2.

[0081]

[Table 1]

[0082]

[Table 2] When the desired temperature is different from the equilibrium temperature shown in Table 2, the temperature control mechanism can be operated to control the temperature to a predetermined value.

Therefore, the material of the strip-shaped substrate and the surface treatment method,
Even when conditions such as the size of the film forming chamber, gas flow rate, gas mixture ratio, pressure in the film forming chamber, bias voltage, microwave, and power are different, the equilibrium temperature is similarly measured to optimize the performance of the temperature control mechanism. Then, the temperature of the strip substrate can be controlled to a predetermined value.

(Step 6: Discharge by High Frequency [Film Forming Step 1]) A high frequency is oscillated from an RF power source or a microwave power source, and the film forming chamber 34 is passed through a barrel cable or a waveguide.
RF power or microwave power is input into 9 to 351. Then, the source gas introduced into the film forming chambers 349 to 351 is ionized by the electric power. As a result of the action of radicals generated as a result, a uniform deposited film is formed in the region corresponding to the inside of each of the film forming chambers 349 to 351 of the belt-shaped substrate. For both RF power and microwave power, the tuner adjusts the reflected power to 20% or less of the incident power after ionization.

The internal structure of the film forming chamber 350 is as shown in FIG. 2, and a DC bias voltage is applied to the three bias electrodes 109.

(Step 7: Conveyance of Strip-shaped Substrate [Film Forming Step 2]) After the plasma emission and the bias current generated by the discharge in (Step 6) reach a stable state, they are continuously formed on the strip-shaped substrate. A strip-shaped substrate is transported to form a deposited film. The transport speed is determined by the desired film thickness of the deposited film, the deposition speed, and the residence time in the film forming chamber. For example, when the desired deposited film thickness is 200 nm and the deposition rate is 10 nm / sec,
The residence time t is t = 200 (nm) / 10 (nm / sec) = 20 (sec). Therefore, when a film is formed in one discharge furnace having a width of 200 mm in the transport direction shown in FIG. 1, the transport speed V ₁ is V ₁ = 200 (mm) / 20 (sec) = 10 (mm /
sec) = 0.6 (m / min).

On the other hand, in the case of forming a film in three discharge furnaces having a width of 200 mm shown in FIG. 2, the transport speed V ₂ is calculated by the same calculation as follows: V ₂ = 30 (mm / sec) = 1.8 (m / min). On the contrary, when it is desired to reduce the film thickness, the width of the discharge furnace may be designed to be narrow, or the discharge furnace may be provided with a diaphragm to narrow the effective opening width. Of course, the film formation rate may be slowed down,
The residence time may be shortened. In any case, the film thickness, the deposition rate, the width of the discharge furnace, the residence time, etc. may be appropriately selected so that the desired film quality can be obtained.

(Step 8: Cooling of the belt-shaped substrate and stop of conveyance) As described above, when the belt-shaped substrate is conveyed, a deposited film is continuously formed, and the remaining amount of the belt-shaped substrate wound around the feeding bobbin is almost exhausted. Stop the conveyance of the strip substrate, the high frequency discharge and the temperature control. Here, as the remaining amount detecting means of the strip-shaped substrate wound around the delivery bobbin, the above-described delivery length indicator of the strip-shaped substrate, outer diameter detection of the delivery bobbin, or the like may be used. Further, in order to take out the band-shaped substrate on which the film formation is completed into the atmosphere, the band-shaped substrate must be cooled in advance. In order to prevent the deposited film from peeling off due to this cooling, it is desirable to gradually cool, and the raw material gas is allowed to flow for a while even after the high frequency discharge is stopped.

(Step 9: Stopping the introduction of the raw material gas) After the raw material gas is flowed for about 5 minutes, the introduction of the raw material gas is stopped and an inert (He) gas is flown at a flow rate of about 200 sccm.
After the introduction of the inert gas is stopped when the surface temperature of the strip-shaped substrate reaches about 70 ° C., the residual gas is exhausted and the evacuation is continued until the pressure in the film forming chamber reaches 2 × 10 ⁻⁵ Torr.

(Step 10: Nitrogen Leakage in Vacuum Container) In order to return the pressure in the film forming chambers 349 to 351 from 2 × 10 ⁻⁵ Torr to atmospheric pressure, dry nitrogen was introduced into the film forming chambers 349 to 351 to complete the formation. After confirming that the pressure in the film chambers 349 to 351 has become atmospheric pressure with a Bourdon tube pressure gauge (not shown), the lids of the vacuum containers 302, 303, 100 are opened, and the strip-shaped substrate on which the film formation is completed is released into the atmosphere. Take it out.

(Step 11: Removal of Strip Substrate) The strip substrate is taken out in the following two ways.

(A) The roll-shaped substrate for one roll is entirely wound on the winding bobbin, the feeding bobbin is emptied, and then the winding bobbin and the feeding bobbin are taken out.

(B) When the feeding bobbin 335 still remains, the strip-shaped substrate is cut in the vicinity of the feeding bobbin, and the feeding bobbin is replaced with a feeding bobbin on which another strip-shaped substrate is wound. The end portion and the cut portion of the strip-shaped substrate left after cutting are joined. Then, after transporting the new strip-shaped substrate until this joining line is near the winding bobbin, the strip-shaped substrate is cut again by this joining line. After cutting, the take-up bobbin on which the film-shaped substrate is wound is taken out, and another take-up bobbin is attached.

Which of the two taking-out methods is preferable depends on the length of the apparatus and the number of film-forming chambers, and it is desirable to appropriately select it.

According to the above procedure, a large-area photovoltaic element can be stably formed.

[0096]

The present invention will be described in more detail below with reference to examples, but the present invention is not limited to these examples.

(Example 1) The roll-to-roll process shown in FIG.
Using a roll type plasma CVD apparatus, the effect of the cooling means having the above-described heat insulating structure was examined.

The method of the experiment will be described below.

(Method of Observing Temperature of Film Forming Chamber Inner Wall) While cooling the microwave introduction window with water, the temperature of the inner wall of the film forming chamber was raised by a sheath heater closely attached to the outer wall of the film forming chamber. The inner wall temperature was monitored by two thermocouples covered with an electromagnetic shield. One of them was fixed with a screw in the vicinity of the microwave introduction window, and the other was fixed with a screw on the bottom plate in the center of the film forming chamber. The former temperature was T ₁ and the latter temperature was T ₂ . These thermocouples were connected to a temperature indicator placed outside the plasma CVD apparatus through a through hole in the wall of the film forming chamber.

(Method of Producing Discharge) Discharge was carried out in the following procedure. SiH ₄ gas: 400 sccm, H ₂ gas: 200 sc
cm, and the pressure inside the deposition chamber is set to about 8 mTorr. The inner wall is heated to a predetermined temperature by the sheath heater. Microwave power is applied to the film forming chamber to cause discharge. DC 120V is applied to the bias electrode. Observe the discharge state.

Table 3 shows the relationship between the temperature of the inner wall of the film formation chamber and the discharge state, which was observed in the above-described experimental method.

[0102]

[Table 3]

(Comparative Example 1) In this example, instead of the apparatus having the heat insulating structure of Example 1, an apparatus having a structure in which the cooling means for the microwave introduction window was in close contact with the microwave introduction window and the film forming chamber was used. Using.

The other points were the same as in Example 1.

In this example, the results shown in Table 4 were obtained.

[0106]

[Table 4] From the results of Table 3 and Table 4, both the temperature T ₁ near the microwave introduction window and the temperature T ₂ of the bottom plate in the center of the film forming chamber are 100 ° C.
Only in the above cases, it can be seen that the discharge state was stable. Therefore, it was judged important to maintain the inner wall surface temperature T of the film forming chamber at 100 ° C. or higher.

Further, the film forming temperature of the substrate determines the characteristics of the semiconductor film to be formed. Therefore, the temperature T of the inner wall surface of the film forming chamber
Must be below the film formation temperature of the substrate.

As a result, the inner wall surface temperature T of the film forming chamber is 1
It is necessary to use in the range of 00 ° C. ≦ T ≦ [deposition temperature of substrate].

Example 2 In this example, the method of heating the inner wall of the film forming chamber in Example 1 was changed as follows. That is, the inner wall is not heated to a predetermined temperature only by heating with the sheath heater (Example 1), but is heated to a predetermined temperature by heating with the sheath heater and exposure to Ar plasma (implementation). Example 2). Specifically, the procedure was as follows.

(1) Argon gas is caused to flow at 500 sccm and the pressure inside the film forming chamber is set to about 800 mTorr. (2) The inner wall is heated to 80 ° C. with the sheath heater. (3) Microwave power is applied to the film forming chamber to cause argon discharge. (4) DC 40 V is applied to the bias electrode. (5) When T ₁ = 100 ° C. is reached, stop the argon gas. (6) Stop microwave power. (7) SiH ₄ gas: 400 sccm, H ₂ gas: 200
The pressure inside the film formation chamber is set to about 8 mTorr by flowing sccm. (8) Microwave power is applied to the film forming chamber to cause discharge. (9) DC 120V is applied to the bias electrode. (10) Observe the discharge state.

As a result of the above experiment, the discharge was stabilized at 500 W × 2 for 5 hours, and the microwave introduction window was not damaged or the microwave power was totally reflected due to crystallization. Also,
This result was the same as in the case of Example 1, and it was found that it did not depend on the heating method.

From the above three experimental results, in order to stably and stably form the semiconductor film having the temperature dependence of the electric resistance by the microwave plasma CVD method, (1) the microwave introduction window The temperature of the surface exposed to plasma is kept lower than the crystallization temperature of the semiconductor film, and (2) the inner wall surface temperature T of the film forming chamber is maintained at 100 ° C. ≦ T ≦ [film forming temperature of the substrate]. Decided that is important.

(Example 3) In this example, a pin type photovoltaic element was manufactured using the apparatus shown in FIG.

The photovoltaic element comprises a lower electrode, n
Type semiconductor layer, i type semiconductor layer, p type semiconductor layer (hereinafter referred to as “n
Layer "," i layer "," p layer "), a transparent electrode and a current collecting electrode are deposited in this order to form a photovoltaic element.
The photovoltaic element is premised on that light is incident from the transparent electrode side.

First, SUS4 that has been thoroughly degreased and washed
30 strip-shaped substrates are set in a continuous sputtering device, and Ag
(99.99%) 100 using electrode as target
Zn thin film (0.
%) A ZnO thin film of about 2 μm was sputter-deposited using the electrode as a target to form a lower electrode.

Subsequently, the strip-shaped substrate on which the lower electrode is formed is subjected to the roll-to-roll type plasma CV shown in FIG.
The first dope layer forming container 302 and the i layer forming container 35 are set in the delivery bobbin 333 in the substrate delivery container 301 of the D apparatus 300 with the lower electrode 1202 facing downward.
2. The winding bobbin 335 in the substrate winding container 304 was wound around its end via the second dope layer forming container 303, and the tension was adjusted so as not to sag.

In the first dope layer forming container 302 and the second dope layer forming container 303, n-type a-Si:
An H film and a p-type μc-Si: H: F film were formed. According to the procedure of (Step 1) to (Step 11), discharge was generated under the film forming conditions shown in Table 5.

[0118]

[Table 5] After the discharge is stabilized, the belt-like substrate is transported at a speed of 127 cm / min.
(= 50 inch / min), and continuously n,
The i and p type semiconductor layers were laminated. When the formation of the semiconductor layer over the entire length of the strip substrate 334 of about 300 m is completed, the operation of the apparatus is stopped. Then, the strip substrate 334 was gradually cooled and then taken out into the atmosphere. Select a photovoltaic element after about 3 hours, and use a continuous module device
A 70 cm solar cell module was produced.

This module is AM1.5 (100 mW
The photoelectric conversion efficiency was measured under the light irradiation of / cm ² ). As a result, a conversion efficiency of 8.3% or more was obtained at any position on the strip substrate.

(Embodiment 4) In this embodiment, the pin of Embodiment 3 is used.
Instead of one set of junctions, there were two sets of pin junctions. In general, a photovoltaic device having two sets of pin junctions is called a tandem stack pin photovoltaic device. It was manufactured using the apparatus whose configuration is shown in Table 6. Here, the optical band gap Eg of the top cell and that of the bottom cell are different. However, in this electromotive force element, it is premised that light is incident from the transparent electrode 1206 side.

[0121]

[Table 6] The procedure for manufacturing the photovoltaic element is the same as in (Film Forming Example 1), and the series of steps up to (n layer, i layer, p layer) is repeated.
I repeated it. And with continuous module device, 35cm
A 70 cm solar cell module was produced. here,
The film forming conditions used in (Step 1) to (Step 11) are shown in Tables 7 and 8.

[0122]

[Table 7]

[0123]

[Table 8] The photoelectric conversion efficiency of this module was measured under irradiation with light of AM 1.5 (100 mW / cm ² ). As a result, a conversion efficiency of 9.3% or more was obtained at any position on the strip substrate.

(Embodiment 5) In this embodiment, the pin of Embodiment 3 is used.
Instead of one set of junctions, there were three sets of pin junctions. Generally, a photovoltaic element having three sets of pin junctions is called a triple stack type pin photovoltaic element. Here, the bottom cell and the middle cell have almost the same optical band gap, and are different from the top cell. The apparatus used was one in which the structures from 310 to 313 in FIG. 3 were inserted between the substrate delivery container of Table 6 and the n-layer forming container of the bottom cell.

The procedure for manufacturing the photovoltaic element was the same as in Example 3, and the series of steps up to (n layer, i layer, p layer) was repeated three times in total. Then, a solar cell module having a size of 35 cm × 70 cm was produced by a continuous module device. The film forming conditions used in this manufacturing procedure are shown in Tables 9 and 10.

[0126]

[Table 9]

[0127]

[Table 10] The photoelectric conversion efficiency of this module was measured under irradiation with light of AM 1.5 (100 mW / cm ² ). As a result, conversion efficiency of 10% or more was obtained at any position of the strip substrate.

[0128]

【The invention's effect】

(Claim 1) As described above, according to the invention of claim 1, a semiconductor film manufacturing apparatus capable of sustaining stable discharge for a long time without abnormal discharge or discharge interruption can be obtained. As a result, a semiconductor film manufacturing apparatus with high productivity can be provided.

(Claim 2) According to the invention of claim 2, since the absorption loss and the reflection loss of the microwave in the microwave transmitting member are alleviated, a method for producing a semiconductor film in which microwave power can be effectively utilized can be obtained. .

[Brief description of drawings]

FIG. 1 is a schematic exploded perspective view showing a film forming chamber of a plasma CVD apparatus according to a first embodiment.

FIG. 2 is a schematic exploded perspective view showing a microwave introduction window of the plasma CVD apparatus according to the first embodiment.

FIG. 3 is a schematic cross-sectional view of a roll-to-roll type plasma CVD apparatus according to the first embodiment.

FIG. 4 is a schematic view of a microwave plasma CVD apparatus according to a conventional example.

[Explanation of symbols]

 106 microwave introduction window, 107, 201-204 cooling jacket, 205-214 refrigerant passage, 217 microwave transmitting member, 218 heat insulating structure.

Claims (2)

[Claims] 1. A microwave plasma CVD method is used,
In a device for producing a semiconductor film, which is a double-chamber method including a vacuum container and a film forming chamber built in the vacuum container, a microwave introducing window is provided on a side wall of the film forming chamber, and a microwave is introduced in the microwave introducing window. The transparent member was provided with cooling means in close contact with the periphery of the microwave transparent member, and the heat insulating member was provided in close contact with at least all portions of the periphery of the cooling means exposed in the film formation chamber. An apparatus for producing a semiconductor film, characterized in that 2. A microwave plasma CVD method is used,
In a method for manufacturing a semiconductor film in which electric resistance has temperature dependence, a surface temperature of a portion of a microwave permeable member used for introducing a microwave that is exposed to plasma is controlled by a cooling means. A heat insulating structure that keeps the temperature lower than the crystallization temperature and that blocks the influence of the cooling means is closely arranged on the microwave permeable member, and heating means is used to form a film forming chamber other than the microwave permeable member. A method for manufacturing a semiconductor film, wherein the inner wall surface temperature T ° C. is maintained within a range of 100 ° C. ≦ T ≦ [deposition temperature of substrate].