JPH0878253A - Film-type transformer - Google Patents

Film-type transformer

Info

Publication number
JPH0878253A
JPH0878253A JP6214784A JP21478494A JPH0878253A JP H0878253 A JPH0878253 A JP H0878253A JP 6214784 A JP6214784 A JP 6214784A JP 21478494 A JP21478494 A JP 21478494A JP H0878253 A JPH0878253 A JP H0878253A
Authority
JP
Japan
Prior art keywords
winding
type transformer
windings
film
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6214784A
Other languages
Japanese (ja)
Inventor
Chiyouko Saitou
斎藤兆古
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Otsuka Science Co Ltd
Shashin Kagaku Co Ltd
Original Assignee
Otsuka Science Co Ltd
Shashin Kagaku Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Otsuka Science Co Ltd, Shashin Kagaku Co Ltd filed Critical Otsuka Science Co Ltd
Priority to JP6214784A priority Critical patent/JPH0878253A/en
Publication of JPH0878253A publication Critical patent/JPH0878253A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain an air core film-type transformer which is less affected by an edge effect by a method wherein the film-type transformer is equipped with a primary winding pattern and a secondary winding pattern provided adjacent to each other onto a thin film board, and the windings are made to grow larger in width or thickness with a distance from their center. CONSTITUTION: A right half of a circular board 1 is shown in Figure, wherein a left end indicates the center of the board 1, and a right end shows the right end of the board 1. Winding patterns 2 and 3 are formed on the upside of the board 1, and windings patterns 2' and 3' are formed on the underside by etching or the like. A gap g provided between the windings is set constant, and the widths w1 , w2 ,... of the windings are set so as to grow larger with a distance from their center to satisfy a formula, w1 <w2 <...<wn . By this setup, a film- type transformer of this constitution is less affected by an edge effect caused by a concentration of a magnetic field, prevented from increasing in inner inductance, and improved in degree of coupling between a primary and a second coil.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は1枚のフィルム状薄膜基
板に1次コイル、2次コイルパターンを形成したフィル
ム型トランスの改良に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a film type transformer in which a primary coil and a secondary coil pattern are formed on a single film-shaped thin film substrate.

【0002】[0002]

【従来の技術】一般に、各種電源機器の中で、モータ駆
動用などの中容量(数kW)以上のものはそれ自体を独
立に単体品として製造する場合が多いが、数百あるいは
数十W以下のものはパーソナルコンピュータ等のよう
に、その製品システム中に組み込まれるケースが多い。
特に計算機用電源においては、信号用半導体、すなわち
メモリデバイスの小型・高密度化が飛躍的に進んでお
り、電源のプリント基板上に占める割合が近年大きくな
ってきている。このような背景から小容量電源の一層の
小型・軽量化が要求されている。
2. Description of the Related Art Generally, among various power supply devices, those having a medium capacity (several kW) or more, such as for driving a motor, are often manufactured independently as a single product, but several hundred or several tens of W The following items are often incorporated in a product system such as a personal computer.
Particularly in computer power supplies, signal semiconductors, that is, memory devices, have been dramatically reduced in size and density, and the percentage of power supplies on a printed circuit board has been increasing in recent years. Against this background, there is a demand for smaller and lighter small-capacity power supplies.

【0003】一方、最近の電力用半導体素子の高周波化
に伴い、トランス、インダクタ、およびコンデンサの小
型化が実現されている。しかし、これらの回路部品の高
周波における低損失化が重要な課題であり、インダクタ
およびトランスはフェライトまたはアモルファス磁性材
料を磁心に用いることで高周波時の低損失化に対応して
いる。しかしながら、これらの磁性材料においてもいわ
ゆる鉄損が励磁周波数と共に増加するため、電源機器の
効率を下げる要因となっている。また、磁性材料は、本
質的に磁束の飽和状態をもっており、インダクタおよび
トランスとして使用できる磁束値、すなわち電圧・時間
積に制限があり、機器設計の制約条件となっいる。この
ような問題を解決するために、本発明者は、既にフィル
ム型の空心トランスについての提案を行っている。
On the other hand, with the recent increase in the frequency of power semiconductor elements, miniaturization of transformers, inductors, and capacitors has been realized. However, reducing the loss of these circuit components at high frequencies is an important issue, and by using ferrite or amorphous magnetic material for the magnetic core of the inductor and transformer, it is possible to reduce loss at high frequencies. However, also in these magnetic materials, so-called iron loss increases with the excitation frequency, which is a factor that reduces the efficiency of the power supply device. Further, the magnetic material essentially has a saturated state of magnetic flux, and the magnetic flux value that can be used as the inductor and the transformer is limited, that is, the product of voltage and time, which is a constraint condition for device design. In order to solve such a problem, the present inventor has already proposed a film type air-core transformer.

【0004】この既提案について簡単に説明する。例え
ば、図1に示すようなごく接近した長さ3m、断面円の
半径が0.2mmの2つの銅導体の交流抵抗RA (RA1
=RA2)、自己インダクタンスL(L1 =L2 )および
結合係数kについての周波数特性理論値は図2に示すよ
うなものである。図2から分かるように、励磁周波数が
増加すると、表皮効果によって交流抵抗は増加するが、
内部自己インダクタンスが減少するため、高周波領域に
おいて高い結合係数が得られる。
The above-mentioned proposal will be briefly described. For example, as shown in FIG. 1, AC resistances R A (R A1 of two copper conductors having a length of 3 m and a radius of a cross-section circle of 0.2 mm that are very close to each other
= R A2 ), the self-inductance L (L 1 = L 2 ), and the theoretical value of the frequency characteristic with respect to the coupling coefficient k are as shown in FIG. As can be seen from FIG. 2, when the excitation frequency increases, the AC resistance increases due to the skin effect,
Since the internal self-inductance is reduced, a high coupling coefficient is obtained in the high frequency range.

【0005】そこで、図3に示すように、1次及び2次
巻線パターンをリソグラフィ技術、エッチング技術、印
刷技術等によりフィルム状薄膜絶縁基板1に2本のパタ
ーンを、近接させて円形同心軸状に形成する。図3
(a)に示すように2本のパターンを1次巻線、2次巻
線とすると、これによってフィルム型薄膜トランスが形
成され、この一枚のフィルムでも変圧器動作は可能であ
るが、2枚以上のフィルムトランスを積層した方が低周
波特性の改善、変圧比の変更等都合がよい。
Therefore, as shown in FIG. 3, the primary and secondary winding patterns are formed by bringing two patterns close to the film-like thin film insulating substrate 1 by a lithographic technique, an etching technique, a printing technique, or the like to form a circular concentric shaft. Form. FIG.
As shown in (a), if two patterns are used as a primary winding and a secondary winding, a film type thin film transformer is formed by this, and a transformer operation is possible with this single film. It is convenient to stack more than one film transformer to improve low frequency characteristics and change the transformer ratio.

【0006】いま、パターンの中心を始点として円形同
心軸状に形成したとすると、図3(a)のパターンは時
計方向に、図3(b)のパターンは反時計方向に巻回さ
れていることになる。そして、ピッチ、巻回数が等しい
とすると、図3(a)、図3(b)において各ターン毎
に常に外側に位置する巻線の方が、内側に位置する巻線
よりも長くなる。そこで、図3(a)の各ターン毎に常
に外側に位置する巻線を1次巻線2、内側に位置する巻
線を2次巻線3としたとき、図3(b)では、逆に各タ
ーン毎に常に外側に位置する巻線を2次巻線3´、内側
に位置する巻線を1次巻線2´とし、図3(a)と図3
(b)の基板を積層し、端子2bを端子2b´に、端子
3bを端子3b´に接続し、2a、2a´を1次端子、
3a、3a´を2次端子とすれば、図3(a)と図3
(b)の巻線パターンによる磁束が加わり、かつ1次巻
線と2次巻線の長さを等しくすることができる。このよ
うに2枚を積層したものを単位として複数積層し、互い
に直列或いは並列接続してフィルム型トランスを形成す
る。直列接続すると抵抗値が大きくなり、並列接続する
と抵抗値が小さくなるので、接続する負荷とのインピー
ダンス整合がとれるように接続を選択する。
Now, assuming that the pattern is formed in a circular concentric axis shape starting from the center, the pattern of FIG. 3A is wound clockwise and the pattern of FIG. 3B is wound counterclockwise. It will be. Then, assuming that the pitch and the number of turns are the same, in each of the turns shown in FIGS. 3A and 3B, the winding located outside always has a longer length than the winding located inside. Therefore, for each turn in FIG. 3A, when the winding that is always located outside is the primary winding 2 and the winding that is located inside is the secondary winding 3, the reverse winding in FIG. For each turn, the winding that is always located on the outer side is the secondary winding 3 ′, and the winding that is located on the inner side is the primary winding 2 ′.
The substrates of (b) are laminated, the terminal 2b is connected to the terminal 2b ', the terminal 3b is connected to the terminal 3b', 2a and 2a 'are primary terminals,
If 3a and 3a 'are used as the secondary terminals, they are shown in FIG.
Magnetic flux is added by the winding pattern of (b), and the lengths of the primary winding and the secondary winding can be made equal. In this way, a plurality of layers, each of which is a laminate of two sheets, are laminated and connected in series or in parallel to each other to form a film type transformer. When connected in series, the resistance value becomes large, and when connected in parallel, the resistance value becomes small.

【0007】このフィルム型トランスでは比較的高抵抗
負荷で高周波領域で良好な効率が得られ、周波数が高い
ほど巻線電流の表皮効果が顕著となり高効率が達成でき
る。なお、巻線パターンは円形状に限らず、角形の同心
軸形、L形の同心軸形等でもよく、また、C形、E形等
基板の一部にコイルが形成されない領域があるように任
意形状にパターン形成してもよい。また、巻数比も1:
1に限らず、1次巻線パターンと2次巻線パターンの本
数を適宜異ならせて磁束の向きが同じになるように接続
すれば任意の変圧比のものを得ることが可能である。
In this film type transformer, good efficiency can be obtained in a high frequency region with a relatively high resistance load, and as the frequency is higher, the skin effect of the winding current becomes more remarkable and high efficiency can be achieved. The winding pattern is not limited to a circular shape, and may be a rectangular concentric shaft shape, an L-shaped concentric shaft shape, or the like, and there may be a region such as a C-shaped or E-shaped substrate where no coil is formed. You may pattern-form in arbitrary shapes. Also, the turns ratio is 1:
The number of primary winding patterns and the number of secondary winding patterns are not limited to 1, and they can be connected so that the directions of the magnetic fluxes are the same, and an arbitrary transformation ratio can be obtained.

【0008】[0008]

【発明が解決しようとする課題】ところで、図3に示し
た構成の空心フィルム型トランスにおいて、周波数を上
げていくと、トランスの端部巻線部に磁界が集中するエ
ッジ効果のため内部インダクタンスが増加する。導体の
インダクタンスLは、導体の内部に分布する電流と磁束
の鎖交に起因する内部インダクタンスLinと、導体外部
の磁束に起因する外部インダクタンスLout の和Lin
out からなる。いま、トランスの1次コイルの自己イ
ンダクタンスをL1 、2次コイルの自己インダクタンス
をL2 とすれば、1次コイルと2次コイル間の結合計数
kは、 k=M/(L1 2 1/2 で表され、Linが増加して自己インダクタンスが増え
ると、1次コイルと2次コイルの結合が低下して効率が
低下する。
By the way, in the air-core film type transformer having the structure shown in FIG. 3, when the frequency is increased, the internal inductance is reduced due to the edge effect in which the magnetic field is concentrated on the end winding portion of the transformer. To increase. The inductance L of the conductor is the sum L in + of the internal inductance L in caused by the interlinkage of the current and the magnetic flux distributed inside the conductor and the external inductance L out caused by the magnetic flux outside the conductor.
It consists of L out . Now, assuming that the self-inductance of the primary coil of the transformer is L 1 and the self-inductance of the secondary coil is L 2 , the coupling coefficient k between the primary coil and the secondary coil is k = M / (L 1 L 2 ) 1/2 , as L in increases and self-inductance increases, the coupling between the primary coil and the secondary coil decreases, and the efficiency decreases.

【0009】本発明はかかる事情に鑑みてなされたもの
であり、巻線導体の表皮効果を利用した空心フィルム型
トランスのエッジ効果による影響を低減化し、高周波領
域における1次・2次コイル間の結合の低下を防止して
高効率を得ることを目的とする。
The present invention has been made in view of the above circumstances, and reduces the influence of the edge effect of the air-core film type transformer utilizing the skin effect of the winding conductor, and reduces the influence between the primary and secondary coils in the high frequency region. The purpose is to prevent a decrease in binding and obtain high efficiency.

【0010】[0010]

【課題を解決するための手段】そのために本発明のフィ
ルム型トランスは、薄膜基板上に近接して形成された1
次巻線パターン及び2次巻線パターンを備え、各巻線の
中心から端部に行くにつれて巻線の幅又は太さを大きく
したことを特徴とする。また、本発明は、薄膜基板上に
近接して形成された1次巻線パターン及び2次巻線パタ
ーンを備え、各巻線の中心から端部に行くにつれて巻線
間のギャップを狭くしたことを特徴とする。また、本発
明は、薄膜基板上に近接して形成された1次巻線パター
ン及び2次巻線パターンを備え、各巻線の中心から端部
にいくにつれて巻線の幅又は太さを大きくすると共に、
巻線間のギャップを狭くしたことを特徴とする。
For this reason, the film type transformer of the present invention is formed on a thin film substrate in close proximity to the film type transformer.
A secondary winding pattern and a secondary winding pattern are provided, and the width or thickness of the winding is increased from the center to the end of each winding. In addition, the present invention includes a primary winding pattern and a secondary winding pattern formed close to each other on the thin film substrate, and the gap between the windings is narrowed from the center of each winding toward the end. Characterize. Further, the present invention is provided with a primary winding pattern and a secondary winding pattern formed close to each other on the thin film substrate, and the width or thickness of the winding is increased from the center of each winding toward the end. With
The feature is that the gap between the windings is narrowed.

【0011】[0011]

【作用】本発明のフィルム型トランスは、フィルム状薄
膜基板に変圧器の1次、2次コイルパターンを形成して
薄膜状変圧器を形成し、基板中心(コイルの中心)から
基板端部(コイル端部)にいくに従ってコイルパターン
の幅又は太さを順次大きくするか、コイルパターン間の
ギャップを順次狭くするか、或いはコイルパターンの幅
又は太さを順次大きくすることと、コイルパターン間の
ギャップを順次狭くすることとを併用する。その結果、
中心と端部とで境界条件が異なり、端部における磁界の
集中が緩和され、エッジ効果による影響を低減化して周
波数を上げたときの内部インダクタンスの増加を防ぎ、
高効率を得ることができる。
In the film type transformer of the present invention, the primary and secondary coil patterns of the transformer are formed on the film-like thin film substrate to form the thin film transformer, and the substrate center (coil center) to the substrate end ( The width or thickness of the coil patterns is gradually increased toward the end of the coil, the gap between the coil patterns is gradually reduced, or the width or thickness of the coil patterns is sequentially increased. Together with narrowing the gap sequentially. as a result,
The boundary condition is different between the center and the end, the concentration of the magnetic field at the end is relaxed, the influence of the edge effect is reduced, and the increase of the internal inductance when the frequency is raised is prevented,
High efficiency can be obtained.

【0012】[0012]

【実施例】図4は本発明のフィルム型トランスを説明す
る図である。図4は、例えば、円形基板1の右半分を示
しており左端が基板の中心(コイル中心)、右端が基板
の右側端部(コイル端部)であり、基板の上面に巻線パ
ターン2、3が、基板の下面に巻線パターン2′、3′
がエッチング等により形成されている。図4(a)は、
巻線の幅w、及び巻線間のギャップgが一定な既提案の
ものを示し、図4(b)は巻線間のギャップgを一定と
し、巻線の幅を端部にいくにつれてw1 <w2 <……<
n と広くした本発明の一実施例を示している。図では
パターンが偏平としているが、完全な偏平ではない場
合、ここで言う幅は太さとも言ってもよい。
EXAMPLE FIG. 4 is a diagram for explaining a film type transformer of the present invention. FIG. 4 shows the right half of the circular substrate 1, for example, the left end is the center of the substrate (coil center), the right end is the right end of the substrate (coil end), and the winding pattern 2 is formed on the upper surface of the substrate. 3 is a winding pattern 2 ', 3'on the lower surface of the substrate
Are formed by etching or the like. Figure 4 (a)
The width w of the winding and the gap g between the windings are shown as already proposed. In FIG. 4B, the gap g between the windings is constant, and the width w of the winding becomes w toward the end. 1 <w 2 <…… <
1 shows an embodiment of the present invention in which w n is widened. In the figure, the pattern is flat, but when the pattern is not completely flat, the width here may be called thick.

【0013】図5は、図4(a)、図4(b)について
の周波数−内部インダクタンスの関係を示したもので、
Laは図4(a)のトランスに対応し、Lbは図4
(b)のトランスに対応している。ただし、図4(a)
においては、巻線パターンの厚み=0.035mm、基
板厚み=0.05mm、ギャップg=0.7mm、巻線
パターンの幅w=1.7mm 図4(b)においては、巻線パターンの厚み=0.03
5mm、基板厚み=0.05mm、ギャップg=0.7
mm、巻線パターンの幅を、中心から、順次 1.7mm,1.7mm,1.9mm,1.9mm,
2.1mm,2.1mm,2.3mm,2.3mm,
2.5mm,2.5mm,2.7mm,2.7mm,
2.9mm,2.9mm,3.1mm,3.1mm,
3.3mmとしている。図から分かるように、巻線の幅
と巻線間のギャップが一定な場合、100kHzあたり
から内部インダクタンスLaは減少し、1MHz近傍で
増加しており、1次コイルと2次コイル間の結合が悪く
なっている。一方、巻線間のギャップを一定とし、巻線
の幅を端部にいくにつれて広くした場合、内部インダク
タンスLbは単調に減少しており、1次コイルと2次コ
イル間の結合が良くなっていることが分かる。
FIG. 5 shows the frequency-internal inductance relationship for FIGS. 4 (a) and 4 (b).
La corresponds to the transformer in FIG. 4A, and Lb corresponds to FIG.
It corresponds to the transformer of (b). However, FIG. 4 (a)
In Fig. 4, the winding pattern thickness = 0.035 mm, the substrate thickness = 0.05 mm, the gap g = 0.7 mm, the winding pattern width w = 1.7 mm, and in Fig. 4 (b), the winding pattern thickness = 0.03
5 mm, substrate thickness = 0.05 mm, gap g = 0.7
mm, the width of the winding pattern, from the center, 1.7mm, 1.7mm, 1.9mm, 1.9mm,
2.1 mm, 2.1 mm, 2.3 mm, 2.3 mm,
2.5mm, 2.5mm, 2.7mm, 2.7mm,
2.9 mm, 2.9 mm, 3.1 mm, 3.1 mm,
It is 3.3 mm. As can be seen from the figure, when the winding width and the gap between the windings are constant, the internal inductance La decreases from around 100 kHz and increases in the vicinity of 1 MHz, and the coupling between the primary coil and the secondary coil increases. It's getting worse. On the other hand, when the gap between the windings is fixed and the width of the winding is widened toward the end, the internal inductance Lb monotonically decreases, and the coupling between the primary coil and the secondary coil is improved. I know that

【0014】図6は、中心から端部にいくにつれて巻線
間のギャップをg1 <g2 <……<gn と広くし、巻線
の幅wを一定とした実施例を示している。本実施例の場
合も、図4(b)の場合と同様に内部インダクタンスL
bは周波数に対して単調に減少し1次コイルと2次コイ
ル間の結合を良くすることができる。
FIG. 6 shows an embodiment in which the gap between the windings is widened from the center to the ends as g 1 <g 2 <... <g n, and the width w of the winding is constant. . Also in the case of the present embodiment, the internal inductance L is the same as in the case of FIG.
b decreases monotonically with respect to the frequency, and the coupling between the primary coil and the secondary coil can be improved.

【0015】図7は、図4のトランスにおいて、1MH
z、2次側開放としたときの磁界分布を示し、図7
(a)は図4(a)、図7(b)は図4(b)に各々対
応している。なお、上部の濃度マップは右へ行く程磁界
が強いことを示している。基板端部付近を比較するとい
ずれも磁界が集中しているが、図7(a)においては集
中した磁界の円が大きく、集中磁界が強いことが分か
る。この強い集中磁界で1MHz近傍で内部インダクタ
ンスが増加したと考えられる。これに対して、図7
(b)においては、中心部と基板端部の境界条件が異な
るため、集中磁界が弱まったと考えられ、このため内部
インダクタンスが増加していない。
FIG. 7 is a circuit diagram of the transformer of FIG.
z shows the magnetic field distribution when the secondary side is opened, and FIG.
4A corresponds to FIG. 4A, and FIG. 7B corresponds to FIG. 4B. The upper concentration map shows that the magnetic field is stronger toward the right. Comparing the vicinity of the substrate edge, the magnetic field is concentrated in all cases, but it can be seen in FIG. 7A that the circle of the concentrated magnetic field is large and the concentrated magnetic field is strong. It is considered that this strong concentrated magnetic field increased the internal inductance near 1 MHz. On the other hand, FIG.
In (b), it is considered that the concentrated magnetic field is weakened because the boundary conditions of the central portion and the substrate end portion are different, and therefore the internal inductance does not increase.

【0016】[0016]

【発明の効果】以上のように本発明によれば、周波数を
高くし、表皮効果により1次・2次コイル間の結合を良
くした空心のフィルム型トランスにおいて、磁界集中に
よるエッジ効果の影響を低減化し、内部インダクタンス
の増加を防いで1次・2次コイル間の結合を良くするこ
とができる。
As described above, according to the present invention, in the air-core film type transformer in which the frequency is increased and the coupling between the primary and secondary coils is improved by the skin effect, the influence of the edge effect due to the magnetic field concentration is reduced. It is possible to improve the coupling between the primary and secondary coils by reducing the internal inductance and preventing the increase of the internal inductance.

【図面の簡単な説明】[Brief description of drawings]

【図1】 円形断面の表皮効果について説明する図であ
る。
FIG. 1 is a diagram illustrating a skin effect of a circular cross section.

【図2】 結合係数kの周波数特性理論値を説明する図
である。
FIG. 2 is a diagram illustrating a theoretical frequency characteristic value of a coupling coefficient k.

【図3】 円形のフィルム型トランスを説明する図であ
る。
FIG. 3 is a diagram illustrating a circular film type transformer.

【図4】 本発明のフィルム型トランスを説明する図で
ある。
FIG. 4 is a diagram illustrating a film type transformer of the present invention.

【図5】 周波数−内部インダクタンスの関係を示す図
である。
FIG. 5 is a diagram showing a relationship between frequency and internal inductance.

【図6】 本発明のフィルム型トランスの他の実施例を
示す図である。
FIG. 6 is a view showing another embodiment of the film type transformer of the present invention.

【図7】 エッジ効果を説明する図である。FIG. 7 is a diagram illustrating an edge effect.

【符号の説明】[Explanation of symbols]

1,1´…基板、2,2´…1次巻線パターン、3,3
´…2次巻線パターン、2a、2a´…1次端子、3
a、3a´…2次端子。
1, 1 '... substrate, 2, 2' ... primary winding pattern, 3, 3
'... secondary winding pattern, 2a, 2a' ... primary terminal, 3
a, 3a '... Secondary terminal.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 薄膜基板上に近接して形成された1次巻
線パターン及び2次巻線パターンを備え、各巻線の中心
から端部に行くにつれて巻線の幅又は太さを大きくした
ことを特徴とするフィルム型トランス。
1. A primary winding pattern and a secondary winding pattern which are formed close to each other on a thin film substrate, and the width or thickness of the winding is increased from the center to the end of each winding. A film-type transformer characterized by.
【請求項2】 薄膜基板上に近接して形成された1次巻
線パターン及び2次巻線パターンを備え、各巻線の中心
から端部に行くにつれて巻線間のギャップを狭くしたこ
とを特徴とするフィルム型トランス。
2. A primary winding pattern and a secondary winding pattern formed close to each other on a thin film substrate, wherein the gap between the windings is narrowed from the center of each winding toward the end. A film type transformer.
【請求項3】 薄膜基板上に近接して形成された1次巻
線パターン及び2次巻線パターンを備え、各巻線の中心
から端部にいくにつれて巻線の幅又は太さを大きくする
と共に、巻線間のギャップを狭くしたことを特徴とする
フィルム型トランス。
3. A primary winding pattern and a secondary winding pattern which are formed close to each other on a thin film substrate, and the width or thickness of the winding is increased from the center to the end of each winding. , A film type transformer characterized by narrowing the gap between windings.
JP6214784A 1994-09-08 1994-09-08 Film-type transformer Pending JPH0878253A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6214784A JPH0878253A (en) 1994-09-08 1994-09-08 Film-type transformer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6214784A JPH0878253A (en) 1994-09-08 1994-09-08 Film-type transformer

Publications (1)

Publication Number Publication Date
JPH0878253A true JPH0878253A (en) 1996-03-22

Family

ID=16661486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6214784A Pending JPH0878253A (en) 1994-09-08 1994-09-08 Film-type transformer

Country Status (1)

Country Link
JP (1) JPH0878253A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150279548A1 (en) * 2014-04-01 2015-10-01 Virginia Tech Intellectual Properties, Inc. Compact inductor employing redistrubuted magnetic flux
US10622136B2 (en) * 2017-10-26 2020-04-14 Arm Ltd Balanced-to-unbalanced (balun) transformer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150279548A1 (en) * 2014-04-01 2015-10-01 Virginia Tech Intellectual Properties, Inc. Compact inductor employing redistrubuted magnetic flux
US10622136B2 (en) * 2017-10-26 2020-04-14 Arm Ltd Balanced-to-unbalanced (balun) transformer

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