JPH0867581A - Jig or tool for semiconductor and method for producing the same - Google Patents

Abstract

PURPOSE: To obtain a jig or tool for semiconductors, having a high purity, little in staining from environments, enabling to easily remove impurities with an acid, etc., and free from the staining of semiconductor elements, etc., in the thermal treatment processes of the semiconductors, etc., by specifying the diameters of voids existing on the surface. CONSTITUTION: Silicon carbide powder having particle diameters of 0.5-10μm, an average particle diameter of 1.5-6μm, and a metal impurity concentration of <=1ppm is mixed with 0-20wt.% of carbon powder having particle diameters of 0.1-4μm, and with a binder, molded, calcined at 500-1000 deg.C, and subsequently sintered at 1600-2000 deg.C for 30min to 20hr in an inert gas atmosphere or under vacuum. The obtained porous silicon carbide molded product is thermally treated in an atmosphere comprising HCl gas or Cl gas, and the thus purified product is impregnated with molten highly pure silicon (>=10) at 1450-1700 deg.C to obtain the sintered product comprising 60-90wt.5 of the silicon carbide and 10-40wt.% of silicon. E.g. silicon wafers are longitudinally arranged to obtain a wafer boat 11 comprising columnar members 11a, 11b, 11c and plate-like members 11d, 11e and having <=10μm diameter voids on the surfaces.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor jig and tool and a method for manufacturing the same, and more particularly to a semiconductor jig and tool used for heat treatment of semiconductors such as wafer boats and process tubes and other uses, and a method for manufacturing the same. Regarding

[0002]

2. Description of the Related Art In recent years, with the development of the semiconductor industry, various semiconductor manufacturing processes have been adopted when forming various elements and the like on a semiconductor substrate such as a silicon wafer.

In these semiconductor processes, various heat treatment steps such as thermal oxidation treatment are adopted. However, semiconductor treatments such as a container used when performing this kind of heat treatment and a wafer boat for holding a semiconductor substrate are used. If the tool is not of high purity, there is a problem that the semiconductor substrate is contaminated due to these semiconductor jigs and tools, and this contamination causes malfunction of the semiconductor element.

In particular, as semiconductors have been highly integrated and miniaturized in recent years, microcontamination such as particles and metal impurities has come to greatly affect the yield and reliability of semiconductor products. For this reason, for example, the demand for cleaning a silicon wafer in a VLSI manufacturing process has become more severe. However, although attention has been paid to the cleaning technology for silicon wafers (for example, SEMI Technology Symposium 93
emiconductor Equipment and Materials Inter-nationa
l December 1993 pp450-453), semiconductor jigs and tools made of high-purity heat-resistant materials used for heat treatment of silicon wafers are still large despite the large influence of contamination on the silicon wafers. Not interested.

[0005]

A high-purity silica glass jig for semiconductors, which has been conventionally used for heat treatment of semiconductors, is uniformly dissolved in a cleaning solution containing hydrofluoric acid and has voids on its surface. Since there is almost no such thing as it is very smooth, even if the surface is contaminated for some reason,
Cleaning with hydrofluoric acid or the like has an advantage that contaminants and the like can be relatively easily cleaned and removed. However, this jig / tool for semiconductors made of quartz glass has a problem in heat resistance when processing a silicon wafer or the like at a high temperature.

On the other hand, since the silicon carbide material has higher heat resistance and higher strength than quartz glass, there is almost no problem with respect to its heat resistance, but the material itself is as pure as quartz glass in terms of purity. There was a problem that it was difficult to get.
In order to improve such a problem relating to the purity of the silicon carbide based material, a dense silicon carbide film or a silicon oxide film is formed on the surface of the silicon carbide based material by a vapor phase method to remove voids existing on the surface of the silicon carbide. A method of filling and suppressing diffusion of impurities has been proposed (JP-A-57-58771, JP-A-64-61376, and JP-A-64-1).
4914).

However, the above-mentioned silicon carbide material having a silicon carbide film formed on its surface is apt to cause pinholes in the silicon carbide film or silicon oxide film on the surface thereof, and has a low adhesion strength to the film. There is a problem that a film formed on the surface is cracked by a mechanical or thermal impact. Further, the silicon carbide-based material has a high manufacturing cost because a film of silicon carbide or the like is formed again on the surface of the silicon carbide-based material once manufactured by the vapor phase method.

However, recently, due to technological progress, a technique for purifying raw materials such as silicon carbide powder has advanced, and by using such a high-purity raw material, a high-purity silicon carbide material as high as silica glass has been developed. , Its application is progressing. However, since ordinary silicon carbide materials produce composite materials by permeating metallic silicon into a porous silicon carbide molded body, there are innumerable parts (voids) in which metallic silicon does not completely permeate. To do. Then, for example, when the wafer boat made of the silicon carbide material is subjected to slit processing, the voids are exposed on the surface of the wafer boat, for example, impurities in cooling water used in the processing step, impurities and particles from the environment, etc. However, they will get into this exposed void.

A void on the surface of such a silicon carbide material,
Especially, it is not easy to remove impurities and particles attached to the inside of a large void with a size of several tens of μm even by acid cleaning, and the drying process after the removal process of impurities is also complicated. There were challenges. Further, in the step of baking a silicon wafer or the like by using a semiconductor jig or tool made of the silicon carbide material and forming an oxide film on the surface thereof, the impurities or the like are taken into the oxide film to contaminate the silicon wafer. There was also a problem of being a cause.

The present invention has been made in view of the above problems, has a high purity, and since there are no large voids on the surface thereof, it is less polluted from the environment, and is easily contaminated by impurities such as acid. It is an object of the present invention to provide a semiconductor jig which can be removed and which is unlikely to contaminate the semiconductor element or the like in a heat treatment step of the semiconductor element or the like.

[0011]

In order to achieve the above object, a semiconductor jig and tool according to the present invention is made of a silicon carbide material composed of silicon carbide and metallic silicon, and has a gas impermeable property. The feature of the tool is that the diameter of the void existing on the surface is 10 μm or less.

A method for manufacturing a semiconductor jig / tool according to the present invention is the method for manufacturing a semiconductor jig / tool, wherein the particle diameter is 0.5 to 10 μm and the average particle diameter is 1.5 to 6 μm. Silicon carbide powder 80 to 100% by weight, and particle size 0.1 to
Carbon powder having a particle size of 4 μm and an average particle size of 0.5 to 2 μm
A mixture of 20% by weight was molded and then fired to obtain a density of 1.8 g / cm ³ or more and a pore diameter of 10 μm.
It is characterized in that a silicon carbide-based molded body having a size of m or less is impregnated with metallic silicon.

First, a method of manufacturing a jig for a semiconductor according to the present invention will be described in detail.

The silicon carbide powder used as a raw material is α
Type, β type, or a mixture thereof. Regarding the particle diameter of the silicon carbide powder, the diameter is 10 on the surface of the manufactured semiconductor jig / tool.
In order to prevent the formation of voids having a size of μm or more, the presence of coarse particles having a particle size of more than 10 μm is not preferable, and in order to prevent abnormal particle growth during firing, fine particles having a particle size of less than 0.5 μm are used. Existence is also unfavorable.
Therefore, a silicon carbide powder having a particle size of 0.5 to 10 μm and an average particle size of 1.5 to 6 μm is preferable. Further, since the jig for semiconductors is a product requiring high purity, it is desirable to use, as the silicon carbide powder, a high purity metal carbide having a metal impurity concentration of 1 ppm or less.

Carbon powder may be blended with the silicon carbide powder. Examples of the carbon source of the carbon powder include graphite,
Examples thereof include carbon black. The blending amount of the carbon powder with respect to the silicon carbide powder is preferably about 0 to 20% by weight. When the silicon carbide powder is blended with the carbon powder to impregnate Si into the porous silicon carbide-based compact produced by firing the mixed powder, it is present inside the porous silicon carbide-based compact. Carbon reacts with Si to form silicon carbide, which improves the mechanical properties and heat resistance of the silicon carbide material. Hereinafter, S is added to the porous silicon carbide-based compact.
The step of impregnating i and reacting a part of the impregnated molten Si with carbon is called a reaction sintering step.

Regarding the particle size of the carbon powder, the presence of coarse particles having a particle size of more than 4 μm is not preferable because it does not cause a rapid volume expansion in the reaction sintering step, and the particle size that reduces the formability at the time of molding is preferable. The presence of fine particles having a particle size of 0.1 μm or less is also not preferable. Therefore, the particle size is 0.1-4
Carbon powder composed of particles having a diameter of 0.5 μm and having an average particle diameter of 0.5 to 2 μm is preferable. Further, since a semiconductor jig or the like is required to have a high purity, it is necessary to use a carbon powder having a high purity with a metal impurity concentration of 1 ppm or less.

Next, the above-mentioned silicon carbide powder or a mixture of silicon carbide powder and carbon powder is used to prepare a molded body, in which case a known resin used as a binder is blended. Examples of these resins include phenol resins and acrylic resins.

Next, this resin composition is molded into a predetermined shape. This molding step includes compression molding using a known die press, cast molding, and CIP (Cold Isostatic Pressing).
Etc. may be used. If the bulk density of the one formed by the above method is low, the internal porosity increases even after firing,
Since the pore diameter also becomes large, it is necessary to mold the molded body as densely as possible, and it is preferable to mold the molded body after the firing and purification treatment described below to have a density of 1.8 g / cm ³ or more.

Next, the molded body thus formed is calcined to degrease the molded body. The temperature and time of the degreasing treatment vary depending on the size of the molded product, the composition of the binder in the molded product, etc., but are usually 500 to 1000 ° C.
It is preferably about 30 minutes to 20 hours. The temperature rising rate in this degreasing step is appropriately adjusted depending on the size and thickness of the molded body.

Next, the compact is fired. This firing strengthens the bond between the silicon carbide particles to increase the strength of the porous silicon carbide-based compact, and further removes the oxygen content in the silicon carbide. The purpose is to improve the wettability with molten silicon.

The firing temperature is preferably 1600 to 2000 ° C. It is considered that the chemical reactions shown in the following chemical formulas 1 to 3 proceed during firing.

[0022]

[Chemical formula 1] SiO ₂ (s) + 3C (s) → SiC
(S) + 2CO (g)

[0023]

Embedded image SiO ₂ (s) → SiO (g) + (1/2) O ₂ (g)

[0024]

Embedded image SiC (s) → Si (g) + C (s) The reaction of the above chemical formula 1 proceeds at a temperature of 1600 ° C. or higher. Thereby, silicon dioxide existing on the surface of the silicon carbide particles is reduced to silicon carbide. Therefore, 1
In the treatment at a temperature near 600 ° C., mass transfer due to surface diffusion occurs from the surface of the silicon carbide particles to the neck between the silicon carbide particles, the bonding area between the particles increases, and the shape of the pores approaches a spherical shape. Furthermore, at temperatures above 1780 ° C, S
Since the vapor pressure of iO increases considerably, mass transfer due to the vapor phase shown in the above Chemical Formula 2 becomes active along with the surface diffusion, and the reduction of silicon dioxide on the surface of the silicon carbide particles becomes more active.

If the firing temperature is lower than 1600 ° C., the above effects cannot be obtained because the surface diffusion or the chemical reaction shown in the chemical formula 1 does not proceed. On the other hand, if the firing temperature exceeds 2000 ° C., the reaction of the chemical formula 3 occurs. Since the decomposition and volatilization of silicon carbide become active, the fine particles having a particle size of 1 μm or less in the molded body are decomposed and large voids are formed in the molded body. Therefore, the firing temperature of the molded body is more preferably in the range of 1780 to 2000 ° C. where mass transfer due to the vapor phase occurs.

Firing of the molded body is carried out under an atmosphere of an inert gas such as Ar or under reduced pressure, but it is more preferably carried out under reduced pressure in order to promote the chemical reaction of the above chemical formulas 1 and 2. The heating time varies depending on the size and composition of the molded body, the firing temperature, etc., but is preferably about 30 minutes to 20 hours. Further, the temperature rising rate is also appropriately adjusted according to the size and thickness of the molded body. By such firing, silicon dioxide on the surface of the silicon carbide particles in the molded body is removed, the bonding area between the silicon carbide particles is increased, and the strength of the porous silicon carbide-based molded body is increased.

Next, the porous silicon carbide type molded body produced by firing the molded body is subjected to a purification treatment. For this purification treatment, for example, a heat treatment is performed in an atmosphere of HCl or Cl ₂ gas, which is a known method. Can be adopted. At this time, if fine silicon carbide particles having a particle size of 0.2 μm or less are present in the porous silicon carbide-based compact, the particles react with HCl gas or the like to generate voids, or in a subsequent reaction sintering step. Although it causes abnormal grain growth, such fine silicon carbide particles are not formed when the porous silicon carbide-based compact is manufactured under the conditions described above.

Then, a purified silicon carbide-based compact is impregnated with molten silicon, and a reaction-sintering step of reacting a part of the molten silicon with carbon is performed to carry out a silicon carbide-based firing. Complete the production of the union. In this reaction sintering step, high-purity silicon (10N or more) for semiconductor is
The porous silicon carbide-based compact may be impregnated by heating at 450 to 1700 ° C. to melt it. If the melting temperature of the high-purity silicon is less than 1450 ° C., the viscosity of the molten silicon becomes too high, so that it becomes difficult to impregnate the porous silicon carbide-based compact with the melting temperature of 1700.
On the other hand, if the temperature exceeds ℃, the viscosity is lowered too much, so that the surface tension is lowered and the impregnating property due to the capillary phenomenon is lowered. A more preferable range of the melting temperature of high-purity silicon when impregnating the porous silicon carbide-based compact with molten silicon is 1500 to 1
It is 600 ° C.

By the above method, the silicon carbide of 60 to
A silicon carbide sintered body containing 90% by weight and 10 to 40% by weight of silicon and having a density of 2.9 to 3.1 g / cm ³ is manufactured.

By subjecting the silicon carbide-based sintered body produced in this manner to a cutting process or the like, the production of a semiconductor jig / tool having a void diameter present on the surface of 10 μm or less is completed. This semiconductor jig / tool does not have voids exceeding 10 μm on the newly formed surface even when the cutting process is performed, the metal impurity concentration is 1 ppm or less, and the temperature is about 1350 ° C. or less. It is suitable as a semiconductor tool for use in heat treatment of semiconductors and the like.

[0031]

When the diameter of the voids existing on the surface of the jig for a semiconductor exceeds 10 μm, the depth of the void is often 5 μm or more, and impurities such as particles easily enter. It is not easy to remove such particles by the wet process, and for particles that have penetrated deep inside the void, it is not possible to remove them completely by applying megasonics or spraying low-temperature particles (dry ice, ice, etc.). It is difficult and it is difficult to avoid such contamination by particles. Further, it is difficult to apply the method such as the megasonic method to large-sized members such as process tubes and mother boats, and it is difficult to prevent particle contamination. Furthermore, cooling water during grinding and metal impurities contained in an acidic solution during acid cleaning easily penetrate into these voids, and it is difficult to completely remove them even by a water cleaning or drying process.

According to the semiconductor jig / tool having the above structure, the diameter of the void existing on the surface is 10 μm in the semiconductor jig / tool which is made of a silicon carbide material composed of silicon carbide and metallic silicon and has gas impermeability. Since it is as follows, pollution from the environment is small, and impurities and the like are easily removed by acid or the like, so that the semiconductor element or the like is not contaminated during heat treatment or the like.

Further, according to the method for manufacturing a semiconductor tool according to the present invention, 80 to 100% by weight of silicon carbide powder having a particle size of 0.5 to 10 μm and an average particle size of 1.5 to 6 μm, and particles The diameter is 0.1 to 4 μm and the average particle diameter is 0.5 to 2 μ.
m to form a mixture of 0 to 20% by weight of carbon powder,
Since the silicon carbide-based compact having a density of 1.8 g / cm ³ or more and a pore diameter of 10 μm or less obtained by firing is impregnated with metallic silicon, the void diameter present on the above-mentioned surface is 10 μm or less. A certain semiconductor jig / tool was manufactured, and this semiconductor jig / tool has less environmental pollution,
In addition, since impurities etc. can be easily removed with acid etc.,
It does not contaminate the semiconductor element or the like during heat treatment or the like.

[0034]

EXAMPLES AND COMPARATIVE EXAMPLES Examples and comparative examples of semiconductor jigs and manufacturing methods according to the present invention will be described below with reference to the drawings.

Example 1 To 80 parts by weight of β-type silicon carbide powder (metal impurity concentration: 0.2 ppm) having a particle size in the range of 0.5 to 8 μm and an average particle size of 2.3 μm, Phenolic resin as binder (Metal impurity concentration: 0.1 p
pm) 10 parts by weight and solvent methanol (metal impurity concentration:
10 parts by weight of ND) are added, kneaded, dried and granulated, and then ^two plate-like bodies (110 mm × 35 mm × 8 mm) and circles are formed using a die press under a molding pressure of 500 kg / cm ^2. Three columnar bodies (10 mmφ × 150 mm) were produced. A wafer boat-shaped molded body was produced by joining two plate-shaped bodies to both ends of the three cylindrical bodies.

Next, the molded body was subjected to 100 atmosphere in Ar atmosphere.
After degreasing treatment at 0 ° C for 1 hour, further in Ar atmosphere,
Firing was performed at 1800 ° C. for 3 hours to produce a porous silicon carbide-based compact. Then, the porous silicon carbide-based compact was subjected to a purification treatment at 1200 ° C. for 2 hours in an HCl gas atmosphere.

When the purified silicon carbide-based compact was impregnated with molten silicon (10 N or more) at 1500 ° C., a dense sintered body was obtained in which silicon was penetrated into the compact.

This sintered body was processed with slits necessary for installing a wafer, and was then treated with hydrofluoric nitric acid (HF: HNO ₃ : H ₂
O = 1: 1: 12) The wafer boat was completed by cleaning with an aqueous solution. This wafer boat contains 63% by weight of silicon carbide and 37% by weight of silicon and has a density of 2.97.
Met.

FIG. 1 is a perspective view schematically showing a wafer boat obtained by the above method, and FIG. 2 is an enlarged sectional view schematically showing a part of a columnar member of the wafer boat. .

The wafer boat 11 is a silicon wafer 12
2 are arranged vertically, three columnar members 11a, 11b, 11 having a large number of slits 13 as shown in FIG. 2 are formed.
c and two plate-like members 11d for fixing the same, 1
1e, and when the silicon wafer 12 is subjected to heat treatment, etc.
Heat treatment is performed in a state where a large number of 2 are arranged.

FIG. 3 is a scanning electron microscope (SEM) photograph showing the crystal structure of the surface of the wafer boat according to Example 1 which was subjected to the slit processing.

As is clear from FIG. 3, only a void of several μm is observed on the surface subjected to the slit processing, and the surface has a dense structure with no void exceeding 10 μm. This is because the pores of the porous silicon carbide-based compact produced by the firing treatment of the compact were small and were open pores, so most of the open pores were filled with Si by impregnating Si, This is probably because the wafer boat having a void-free structure was manufactured.

The density of the porous silicon carbide-based compact after firing and purification, its pore diameter, the diameter of the voids existing on the surface of the slit portion of the wafer boat, and the wafer boat produced were used to prepare a 4-inch wafer. Heat treatment (1200 ℃, 2
Table 1 shows the lifetime values of the silicon wafer when
Shown in

The lifetime was measured using LTA-303A manufactured by Leo Giken as a measuring instrument, and a laser beam having a wavelength of 940 nm generated by passing a current of 20 A was used at a predetermined position (61) on the silicon wafer. Location) and the microwave reflection intensity is measured. Then, the resistance value of the silicon wafer was obtained from the reflection intensity obtained from each position of the silicon wafer, the lifetime was calculated, and the average value was used as the lifetime value.

Example 2 A wafer boat was prepared under the same conditions as in Example 1 except that β-type silicon carbide powder having a particle size in the range of 1 to 10 μm and an average particle size of 6 μm was used. It was made. Table 1 shows the density of the porous silicon carbide-based compact, its pore diameter, the diameter of the surface void of the wafer boat, and the lifetime value of the silicon wafer after the heat treatment, as in Example 1. The wafer boat obtained by the above method contained 62% by weight of silicon carbide and 38% by weight of silicon and had a density of 2.95.

Example 3 95% by weight of β-type silicon carbide powder having a particle size of 0.5 to 8 μm and an average particle size of 2.3 μm and a particle size of 0.5 to 3 μm. A wafer boat was produced under the same conditions as in Example 1 except that a mixed powder consisting of 5% by weight of carbon powder (metal impurity concentration: 0.1 ppm) having an average particle size of 2 μm was used. Table 1 shows the density of the porous silicon carbide-based compact, its pore diameter, the diameter of the surface void of the wafer boat, and the lifetime value of the silicon wafer after the heat treatment, as in Example 1.

The wafer boat obtained by the above method contained 66% by weight of silicon carbide and 34% by weight of silicon and had a density of 3.02.

[Comparative Example 1] The particle size is 0.1 to 50 μm.
A wafer boat was produced under the same conditions as in Example 1 except that β-type silicon carbide powder having an average particle size of 15 μm was used. The density of the porous silicon carbide-based compact,
The pore diameter, the diameter of the surface void of the wafer boat, and the lifetime value of the silicon wafer after the heat treatment are shown in Table 1 as in Example 1.

The wafer boat obtained by the above method contained 60% by weight of silicon carbide and 40% by weight of silicon and had a density of 2.90.

Comparative Example 2 The wafer boat according to Comparative Example 1 was washed with an aqueous solution of hydrofluoric nitric acid (HF: HNO ₃ : H ₂ O = 1: 5: 12), and then the wafer was heat-treated. The lifetime values are shown in Table 1.

The wafer boat obtained by the above method contained 60% by weight of silicon carbide and 40% by weight of silicon and had a density of 2.90.

Comparative Example 3 A wafer was prepared under the same conditions as in Example 1 except that β-type silicon carbide powder having a particle size in the range of 0.1 to 6 μm and an average particle size of 1 μm was used. A boat was made. Table 1 shows the density of the porous silicon carbide-based compact, its pore diameter, the diameter of the surface void of the wafer boat, and the lifetime value of the silicon wafer after the heat treatment, as in Example 1.

The wafer boat obtained by the above method contained 58% by weight of silicon carbide and 42% by weight of silicon, and had a density of 2.89.

Comparative Example 4 A wafer was prepared under the same conditions as in Example 1 except that β-type silicon carbide powder having a grain size of 1 to 20 μm and an average grain size of 4.1 μm was used. A boat was made. Table 1 shows the density of the porous silicon carbide-based compact, its pore diameter, the diameter of the surface void of the wafer boat, and the lifetime value of the silicon wafer after the heat treatment, as in Example 1.

The wafer boat obtained by the above method contained 61% by weight of silicon carbide and 39% by weight of silicon, and its density was 2.94.

FIG. 4 is an SEM photograph showing the crystal structure of the surface of the wafer boat according to Comparative Example 4 which was subjected to the slit processing.

As is clear from FIG. 4, large voids of several tens of μm are observed on the surface subjected to the slit processing. This is because the pores inside the porous silicon carbide-based compact produced by the firing treatment of the compact were non-uniform and large closed pores were formed. It is thought that this is because the large closed pores were left unfilled.

[Comparative Example 5] A wafer boat was produced under the same conditions as in Example 1 except that the baking temperature was set to 2200 ° C. Table 1 shows the density of the porous silicon carbide-based compact, its pore diameter, the diameter of the surface void of the wafer boat, and the lifetime value of the silicon wafer after the heat treatment, as in Example 1.

The wafer boat obtained by the above method contained 62% by weight of silicon carbide and 38% by weight of silicon and had a density of 2.94.

[Comparative Example 6] Molding pressure with a die press was 10
A wafer boat was manufactured under the same conditions as in Example 1 except that the pressure was 0 kg / cm ² . The density of the porous silicon carbide-based compact, its pore diameter, the diameter of the surface voids of the wafer boat, and the lifetime value of the silicon wafer after the heat treatment were measured as in Example 1.
As shown in Table 1,

The wafer boat obtained by the above method contained 56% by weight of silicon carbide and 44% by weight of silicon and had a density of 2.85.

[Comparative Example 7] A wafer boat was prepared under the same conditions as in Example 3 except that carbon powder having a particle diameter in the range of 1 to 10 µm and an average particle diameter of 6 µm was used. However, the wafer boat could not be manufactured because cracking occurred during firing.

[0063]

[Table 1]

As described above, in the semiconductor jig and tool according to the embodiment and the method for manufacturing the same, the grain size is 0.5 to 1
80 to 100% by weight of silicon carbide powder having an average particle size of 0 to 6 μm and 1.5 to 6 μm, and 0 to 20% by weight of carbon powder having a particle size of 0.1 to 4 μm and an average particle size of 0.5 to 2 μm A mixture of the above-mentioned is molded and then fired to obtain a wafer boat by impregnating a silicon carbide-based compact having a density of 1.8 g / cm ³ or more and a pore diameter of 10 μm or less with metallic silicon. By this method, it is possible to manufacture a wafer boat in which the diameter of voids existing on the surface is 10 μm or less, and the wafer boat is less polluted from the environment,
In addition, it is possible to easily remove impurities and the like with an acid,
Contamination of the semiconductor element or the like can be prevented in the heat treatment process of the semiconductor element or the like.

[0065]

As described in detail above, the semiconductor jig / tool according to the present invention is a semiconductor jig / tool formed of a silicon carbide material composed of silicon carbide and metallic silicon and having gas impermeability. , The diameter of the void existing on the surface is 1
Since the thickness is 0 μm or less, contamination from the environment is small, impurities and the like can be easily removed by acid, etc., and contamination of the semiconductor element or the like can be prevented in a heat treatment process of the semiconductor element or the like.

Further, according to the method for manufacturing a semiconductor tool according to the present invention, 80 to 100% by weight of silicon carbide powder having a particle size of 0.5 to 10 μm and an average particle size of 1.5 to 6 μm, and particles The diameter is 0.1 to 4 μm and the average particle diameter is 0.5 to 2 μ.
m to form a mixture of 0 to 20% by weight of carbon powder,
After that, the silicon carbide-based compact having a density of 1.8 g / cm ³ or more and a pore diameter of 10 μm or less obtained by firing is impregnated with metallic silicon. Therefore, by this method, the diameter of the voids present on the surface is It is possible to manufacture a semiconductor jig / tool having a size of 10 μm or less. Since this semiconductor jig / tool has little pollution from the environment and impurities and the like can be easily removed by an acid or the like, heat treatment of a semiconductor element or the like is possible. Contamination of the semiconductor element or the like can be prevented in the process or the like.

[Brief description of drawings]

FIG. 1 is a perspective view schematically showing a wafer boat according to an embodiment of the present invention.

FIG. 2 is an enlarged cross-sectional view schematically showing a part of a cylindrical member of the wafer boat according to the example.

FIG. 3 is an SEM photograph showing a crystal structure of a surface of the wafer boat subjected to the slit processing of Example 1.

FIG. 4 is an SEM photograph showing a crystal structure of a surface of a wafer boat according to Comparative Example 4 which has been subjected to slit processing.

[Explanation of symbols]

 11 wafer boat

Claims (2)

[Claims] 1. A semiconductor jig and tool having gas impermeability, which is formed of a silicon carbide material composed of silicon carbide and metallic silicon, has a void diameter of 10 μm existing on its surface.
The following are semiconductor jigs and tools. 2. 80 to 100% by weight of silicon carbide powder having a particle size of 0.5 to 10 μm and an average particle size of 1.5 to 6 μm, and a particle size of 0.1 to 4 μm and an average particle size of 0. 0.5-2μ
m to form a mixture of 0 to 20% by weight of carbon powder,
2. A semiconductor jig according to claim 1, wherein the silicon carbide-based compact having a density of 1.8 g / cm ³ or more and a pore diameter of 10 μm or less obtained by firing is impregnated with metallic silicon. Production method.