JPH0862046A - Method and apparatus for calibrating temperature of board - Google Patents

Method and apparatus for calibrating temperature of board

Info

Publication number
JPH0862046A
JPH0862046A JP22715494A JP22715494A JPH0862046A JP H0862046 A JPH0862046 A JP H0862046A JP 22715494 A JP22715494 A JP 22715494A JP 22715494 A JP22715494 A JP 22715494A JP H0862046 A JPH0862046 A JP H0862046A
Authority
JP
Japan
Prior art keywords
substrate
temperature
calibration
heat treatment
treatment chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22715494A
Other languages
Japanese (ja)
Inventor
Yoji Takagi
庸司 高木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOUYOKO KAGAKU KK
Toyoko Kagaku Co Ltd
Original Assignee
TOUYOKO KAGAKU KK
Toyoko Kagaku Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOUYOKO KAGAKU KK, Toyoko Kagaku Co Ltd filed Critical TOUYOKO KAGAKU KK
Priority to JP22715494A priority Critical patent/JPH0862046A/en
Publication of JPH0862046A publication Critical patent/JPH0862046A/en
Pending legal-status Critical Current

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  • Radiation Pyrometers (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

PURPOSE: To calibrate the temperature without stopping an apparatus for a long time by shifting a calibration board, i.e., a heat resistant board having thermal conduction equivalent to that of a board to be processed and fixed with a thermocouple, to a temperature measuring position in a heat treatment chamber. CONSTITUTION: A processing chamber 2 is coupled with a gate valve 4 which is coupled with a telescopic vacuum bellows 5. An arm 7 penetrates the bellows 5 and secured in place with a calibration board 3 being bonded to the forward end of the arm 7. A plurality of thermocouples, having one ends secured to a thermocouple terminal block 8, are embedded in the board 3. The arm 7 is coupled, at the rear end thereof, with means 6 for advancing or retracting the arm 7 horizontally. The arm 7 is advanced by turning the screw rod 20 and the bellows 5 is compressed to advance the board 3 to a temperature measuring position. The temperature in a radiation temperature measuring region is then measured by means of a radiation thermometer and compared with a temperature measured by means of the thermocouple.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、枚葉処理の熱処理装
置に於いて、被処理基板の温度校正を装置を長時間停止
させることなく、容易に行うことができる温度校正方法
及び該方法に使用する温度校正装置に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature calibrating method and a method for calibrating the temperature of a substrate to be processed easily in a heat treatment apparatus for single-wafer processing without stopping the apparatus for a long time. The present invention relates to a temperature calibration device used.

【0002】[0002]

【従来の技術】従来から、枚葉処理の熱処理装置に於い
ては、被処理基板の温度を放射温度計で測温する時の再
現性及び測定値のづれ並びに熱源の不具合を定期的に確
認する目的で、被処理基板の温度校正を行っている。従
来、このような温度校正は、図9〜図10に示すよう
に、被処理基板1自体及び図11及び図12に示すよう
に、被処理基板を間接的に加熱する加熱プレート(サセ
プター)13に、熱電対端子台8に一端を固定した熱電
対9を固定し、熱電対9で測定した温度と、実際に基板
若しくは加熱プレートを放射温度計で測定した温度とを
比較することにより行っていた。
2. Description of the Related Art Conventionally, in a heat treatment apparatus for single-wafer processing, reproducibility when measuring the temperature of a substrate to be processed with a radiation thermometer, a deviation of measured values, and a defect of a heat source are regularly checked. For this purpose, the temperature of the substrate to be processed is calibrated. Conventionally, such temperature calibration is performed by the heating plate (susceptor) 13 that indirectly heats the substrate to be processed 1 as shown in FIGS. 9 to 10 and the substrate to be processed 13 as shown in FIGS. 11 and 12. Then, the thermocouple 9 having one end fixed to the thermocouple terminal block 8 is fixed, and the temperature measured by the thermocouple 9 is compared with the temperature actually measured by the radiation thermometer of the substrate or the heating plate. It was

【0003】しかしてこの方法は、熱電対9を被処理基
板1若しくは加熱プレート13に固定しなければならな
いので、装置を一時的に停止させなければならなかった
から、大掛かりな準備が必要となり、そのため作業効率
が非常に悪い問題があった。そればかりか、このように
測定する際の作業或は道具によって、必然的に不純物が
熱処理チャンバー内に持ち込まれるので、測定後そのま
ま継続して生産を行うことができず、清掃のため生産作
業を一時中止しなければならない問題があった。従っ
て、従来の校正方法は、極めて厄介な作業を必要として
いたので、基板の生産性が上がらない問題があった。
However, in this method, since the thermocouple 9 has to be fixed to the substrate 1 to be processed or the heating plate 13, the apparatus has to be temporarily stopped, which requires a large-scale preparation. There was a problem that work efficiency was very poor. Not only that, but because the impurities or impurities are inevitably brought into the heat treatment chamber due to the work or tools for measuring in this way, it is not possible to continue production after the measurement, and the production work for cleaning is not possible. There was a problem that had to be suspended. Therefore, the conventional calibration method has a problem that the productivity of the substrate cannot be increased because it requires extremely troublesome work.

【0004】[0004]

【発明が解決しようとする課題】この発明は、このよう
な従来の温度校正法の問題点を解決するためになされた
ものであり、被処理基板の温度校正を装置を長時間停止
させることなく行うことができ、しかも温度校正後は、
そのまま装置の運転を開始させることができる温度校正
方法及び該方法に使用する装置を提供することを目的と
する。
SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems of the conventional temperature calibration method, and the temperature calibration of the substrate to be processed can be performed without stopping the apparatus for a long time. Can be done, and after temperature calibration,
An object of the present invention is to provide a temperature calibration method that can start the operation of the apparatus as it is, and an apparatus used for the method.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するた
め、本発明者は鋭意研究を重ねた結果、被処理基板と同
材質又は同等の熱伝導及び放射率を有する耐熱性材料基
板に熱電対を取着することによって校正用基板を形成
し、この校正用基板をゲートバルブを通して、熱処理チ
ャンバー内に導入し、測温後はゲートバルブから熱処理
チャンバー外に抜き出すことによって、上記目的が達成
されることを想到し、本発明に到達した。しかして従
来、このような校正用基板を使用して校正する方法につ
いては、全く知られていないし、このような発想も全く
知られていない。
In order to achieve the above object, the present inventor has conducted extensive studies and as a result, as a result, a thermocouple was formed on a heat-resistant material substrate having the same material or the same thermal conductivity and emissivity as the substrate to be processed. The above-mentioned object is achieved by forming a calibration substrate by attaching the calibration substrate, introducing the calibration substrate into the heat treatment chamber through the gate valve, and after the temperature measurement, pulling it out of the heat treatment chamber through the gate valve. That is why the present invention has been reached. However, heretofore, a method of calibrating using such a calibration substrate has not been known at all, and such an idea has not been known at all.

【0006】本発明は、放射温度計で測定した温度と、
熱電対で測定した温度とを比較して、枚葉処理装置の被
処理基板の正確な測温、加熱出力の制御に対する補正ま
たは放射温度計の故障を検知する等の温度校正方法に於
いて、被処理基板と同材質又は同等の熱伝導及び放射率
を有する耐熱材料基板に熱電対を取着することにより校
正用基板を形成し、該校正用基板を熱処理チャンバー内
の放射温度計で基板を測温する位置に移動させて測温
し、測温後は熱処理チャンバー外に移動させることを特
徴とする。
The present invention provides a temperature measured by a radiation thermometer,
In the temperature calibration method, such as comparing the temperature measured by the thermocouple, the accurate temperature measurement of the substrate to be processed in the single-wafer processing apparatus, the correction for the control of the heating output or the detection of the failure of the radiation thermometer, A calibration substrate is formed by attaching a thermocouple to a heat-resistant material substrate having the same material or the same thermal conductivity and emissivity as the substrate to be processed, and the calibration substrate is mounted on the substrate with a radiation thermometer in a heat treatment chamber. It is characterized in that the temperature is moved to a position where the temperature is measured, and after the temperature is measured, the temperature is moved to the outside of the heat treatment chamber.

【0007】また、本発明の装置は、被処理基板と同材
質又は同等の熱伝導及び放射率を有する耐熱材料基板に
熱電対を取着することにより形成した校正用基板と、該
校正用基板を水平方向又は水平及び上下方向に移動させ
るアームと、該校正用基板の熱処理チャンバーへのゲー
トとなるゲートバルブと、該ゲートバルブに連結したベ
ローズ継手とを具備してなり、前記校正用基板を前記ゲ
ートバルブを開いて前記熱処理チャンバー内に導入する
ときは、前記ベローズ継手を圧縮し、前記校正用基板を
熱処理チャンバーから隔離する時は前記ベローズ継手を
伸長させるように構成してなることを特徴とする。
Further, the apparatus of the present invention comprises a calibration substrate formed by attaching a thermocouple to a heat-resistant material substrate having the same material or the same thermal conductivity and emissivity as the substrate to be processed, and the calibration substrate. An arm for moving the calibration substrate horizontally or horizontally and vertically, a gate valve serving as a gate to the heat treatment chamber of the calibration substrate, and a bellows joint connected to the gate valve. When the gate valve is opened and introduced into the heat treatment chamber, the bellows joint is compressed, and when the calibration substrate is separated from the heat treatment chamber, the bellows joint is extended. And

【0008】[0008]

【実施例】次に、本発明の実施例を図面に基づいて説明
する。図1は、本発明の実施例を示す平面図であり、被
処理基板1は、処理チャンバ2内の図の位置で処理さ
れ、処理後は、矢印で示すように、ゲートバルブ4′か
ら搬送チャンバ17内に移送される。本発明による校正
方法は、この被処理基板1がない状態で行われる。処理
チャンバ2には、ゲートバルブ4が接続され、ゲートバ
ルブ4には、伸縮自在の真空ベローズ5が連設されてい
る。尚、この実施例では、真空で基板を生産しているの
で、真空ベローズ5を使用しているが、常圧で生産する
場合は、常圧用のベローズ継手を使用すれば良い。
Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a plan view showing an embodiment of the present invention, in which a substrate 1 to be processed is processed at a position shown in the drawing in a processing chamber 2 and, after processing, is transferred from a gate valve 4'as indicated by an arrow. It is transferred into the chamber 17. The calibration method according to the present invention is performed without the substrate 1 to be processed. A gate valve 4 is connected to the processing chamber 2, and a stretchable vacuum bellows 5 is connected to the gate valve 4. In this embodiment, since the substrate is produced in vacuum, the vacuum bellows 5 is used. However, when producing at normal pressure, a bellows joint for normal pressure may be used.

【0009】真空ベローズ5には、アーム7が貫通固定
され、アーム7先端には、図3及び図4に示すように、
2本の弾性材料から形成した保持ピン10,10′を介
して校正用基板3が、耐熱性接着剤11で接着連結され
ている。校正用基板3には、熱電対端子台8に一端を固
定した複数の熱電対9が埋設されている。この実施例で
は、校正用基板3に等間隔に4本の熱電対9が埋設さ
れ、熱電対9の内側の校正用基板3の中央に、放射温度
計測温領域12が形成されるようになっている。校正用
基板3は、被処理基板と同材質又は同等の熱伝導及び放
射率を有する耐熱材料から形成される。
An arm 7 is fixed through the vacuum bellows 5, and at the tip of the arm 7, as shown in FIGS.
The calibration substrate 3 is adhesively connected with the heat resistant adhesive 11 via the holding pins 10 and 10 'formed of two elastic materials. A plurality of thermocouples 9 each having one end fixed to a thermocouple terminal block 8 are embedded in the calibration substrate 3. In this embodiment, four thermocouples 9 are embedded in the calibration substrate 3 at equal intervals, and a radiation temperature measurement temperature region 12 is formed in the center of the calibration substrate 3 inside the thermocouple 9. ing. The calibration substrate 3 is formed of the same material as the substrate to be processed or a heat-resistant material having the same thermal conductivity and emissivity.

【0010】アーム7の後端には、アーム7を水平方向
に前進及び後進させる手段6が連結されている。水平方
向に前進及び後進させる手段6は、図1に示すように、
アーム7の水平方向に連結したロッド18と、該ロッド
18の先端に連設した内周面に螺刻した円筒体19と、
該円筒体19に螺合した螺棒20とから構成されてい
る。螺棒20をモータ21によって両方向に回転させる
ことによって、アーム7を水平方向に前進及び後進させ
るようになっている。尚、アーム7を前進及び後進させ
る手段6は他の手段であっても勿論良く、またアーム7
は、自動でなく、手動で水平方向に前進及び後進させて
も差し支えない。
At the rear end of the arm 7, means 6 for advancing and retracting the arm 7 in the horizontal direction is connected. The means 6 for moving forward and backward in the horizontal direction is, as shown in FIG.
A rod 18 connected to the arm 7 in the horizontal direction, and a cylindrical body 19 threaded on the inner peripheral surface of the rod 18 connected to the tip of the rod 18.
It is composed of a spiral rod 20 screwed into the cylindrical body 19. By rotating the spiral rod 20 in both directions by the motor 21, the arm 7 is moved forward and backward in the horizontal direction. The means 6 for moving the arm 7 forward and backward may of course be any other means.
May be manually moved forward and backward in the horizontal direction, not automatically.

【0011】螺棒20を回転させて、アーム7を前進さ
せ、真空ベローズ5を圧縮して、図2に示すように、校
正用基板3を測温位置まで前進移動させる。この状態
で、放射温度計測温領域12の温度を放射温度計で測定
し、熱電対9で測定した温度と比較して、従来と同様
に、長期的な温度のずれ、加熱出力の制御に対する補正
又は放射温度計の故障等を検知する。
The screw rod 20 is rotated, the arm 7 is moved forward, the vacuum bellows 5 is compressed, and the calibration substrate 3 is moved forward to the temperature measuring position as shown in FIG. In this state, the temperature of the radiation temperature measurement temperature region 12 is measured by a radiation thermometer, and compared with the temperature measured by the thermocouple 9, as in the conventional case, long-term temperature deviation and correction for control of the heating output are corrected. Or, detect a malfunction of the radiation thermometer.

【0012】被処理基板1を加熱プレート(サセプタ
ー)13からの熱伝導によって間接的に加熱する場合
は、図6に示すように、水平方向に前進及び後進させる
手段6に、上下に駆動させる手段16を連結し、アーム
7を上下動させて、校正用基板3を加熱プレート13に
隙間なく密着させる。真空ベローズ5は自在に変形し、
保持ピン10,10′は弾性を有する材料で形成されて
いるので、アーム7を上下動させることによって、保持
ピンのしなりによって、校正用基板3は、加熱プレート
13に隙間なく密着する。尚、アーム7の後端と円筒体
19との連結は、図1に示すように、ロッド18を介在
させることなく、直接連結しても差し支えない。
When the substrate 1 to be processed is indirectly heated by heat conduction from the heating plate (susceptor) 13, as shown in FIG. 6, means 6 for horizontally advancing and retreating, and means for vertically driving it. 16 are connected and the arm 7 is moved up and down to bring the calibration substrate 3 into close contact with the heating plate 13 without any gap. The vacuum bellows 5 can be freely transformed,
Since the holding pins 10 and 10 'are made of a material having elasticity, the calibration substrate 3 is brought into close contact with the heating plate 13 without a gap by moving the arm 7 up and down to bend the holding pins. The rear end of the arm 7 and the cylindrical body 19 may be directly connected without interposing the rod 18 as shown in FIG.

【0013】この実施例では、図6に示すように、上下
に駆動させる手段16をシリンダーで構成し、シリンダ
ーで水平方向に前進及び後進させる手段6を上下動させ
ることによって、アーム7を上下動させ、校正用基板3
を加熱プレート13に密着させるように構成している。
勿論、他の上下動させる手段であっても良く、また自動
でなく手動で上下動させても良い。上記実施例に於いて
は、校正用基板3及び加熱プレート13の加熱は、図6
に示すように、石英窓15を通して赤外線ランプ14行
っているが、本発明に於いては、加熱手段は特に限定さ
れない。
In this embodiment, as shown in FIG. 6, the means 16 for vertically moving is constituted by a cylinder, and the means 6 for horizontally advancing and moving backward in the cylinder is moved up and down to move the arm 7 up and down. Let's calibrate board 3
Is closely attached to the heating plate 13.
Of course, other means for moving up and down may be used, and it may be moved up and down manually instead of automatically. In the above-described embodiment, the heating of the calibration substrate 3 and the heating plate 13 is performed as shown in FIG.
As shown in FIG. 5, the infrared lamp 14 is operated through the quartz window 15, but the heating means is not particularly limited in the present invention.

【0014】[0014]

【作用】本発明は、熱電対を固定した校正用基板を使用
しているので、測定に当たってその都度基板若しくは加
熱プレートに熱電対を固定する手間が省ける。また、校
正用基板は、熱処理チャンバーに出し入れすることがで
きるように構成しているので、温度校正後は校正用基板
を熱処理チャンバーから隔離することによって、装置を
長時間停止させることなく、被処理基板の温度校正を行
うことができると共に、温度校正に当たって、不純物が
熱処理チャンバー内に持ち込まれる恐れもない。
According to the present invention, since the calibration substrate having the thermocouple fixed thereto is used, it is possible to save the trouble of fixing the thermocouple to the substrate or the heating plate each time the measurement is performed. Further, since the calibration substrate is configured to be taken in and out of the heat treatment chamber, the calibration substrate is isolated from the heat treatment chamber after the temperature calibration so that the apparatus can be processed without stopping the apparatus for a long time. The temperature of the substrate can be calibrated, and there is no risk of impurities being brought into the heat treatment chamber during the temperature calibration.

【0015】[0015]

【効果】以上述べたごとく、本発明によれば、熱電対を
固定した校正用基板を熱処理チャンバーに出し入れする
ことができるように構成しているので、測定に当たって
熱電対を固定する手間が省けるほか、装置を長時間停止
させることなく、被処理基板の温度校正を行うことがで
きると共に、温度校正に当たって、不純物が熱処理チャ
ンバー内に持ち込まれる恐れもないので、清掃のため生
産作業を中止する事なく、測定後そのまま継続して生産
を行うことができるから、基板の生産性及び製造コスト
の低減に寄与するところ極めて大きい。また、本発明に
よれば、温度校正作業が極めて簡略化かれるので、定期
的に頻繁に温度校正をすることができるから、安定した
品質の基板を生産することができる。
[Effect] As described above, according to the present invention, since the calibration substrate having the thermocouple fixed therein can be put in and taken out from the heat treatment chamber, the labor for fixing the thermocouple in the measurement can be saved. The temperature of the substrate to be processed can be calibrated without stopping the equipment for a long time, and there is no risk of impurities being brought into the heat treatment chamber during temperature calibration. Since the production can be continued after the measurement as it is, it greatly contributes to the reduction of the productivity and the manufacturing cost of the substrate. Further, according to the present invention, since the temperature calibration work is extremely simplified, it is possible to regularly and frequently perform temperature calibration, so that it is possible to produce a substrate of stable quality.

【0016】[0016]

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例を示す平面図である(内部状態
を明らかにするため、被処理基板及び校正用基板は実線
で表示した)。
FIG. 1 is a plan view showing an embodiment of the present invention (in order to clarify the internal state, a substrate to be processed and a calibration substrate are shown by solid lines).

【図2】本発明の方法により校正している状態を示す平
面図である(内部状態を明らかにするため、熱処理チャ
ンバの蓋を取った状態で表示した)。
FIG. 2 is a plan view showing a state in which calibration is performed by the method of the present invention (displayed with the lid of the heat treatment chamber removed to clarify the internal state).

【図3】本発明の校正用基板の拡大側面図である。FIG. 3 is an enlarged side view of the calibration substrate of the present invention.

【図4】図3の平面図である。FIG. 4 is a plan view of FIG. 3;

【図5】本発明の他の実施例を示す平面図である(内部
状態を明らかにするため、熱処理チャンバの蓋を取った
状態で表示した)。
FIG. 5 is a plan view showing another embodiment of the present invention (shown with the lid of the heat treatment chamber removed to clarify the internal state).

【図6】図5の縦断面図である。FIG. 6 is a vertical sectional view of FIG.

【図7】校正用基板を加熱プレートに密着させる前の状
態を示す側面図である。
FIG. 7 is a side view showing a state before the calibration substrate is brought into close contact with the heating plate.

【図8】校正用基板を加熱プレートに密着させた状態を
示す側面図である。
FIG. 8 is a side view showing a state where the calibration substrate is brought into close contact with a heating plate.

【図9】従来の校正方法を示す平面図である。FIG. 9 is a plan view showing a conventional calibration method.

【図10】図9の縦断面図である。10 is a vertical cross-sectional view of FIG.

【図11】従来の校正方法の他の例を示す平面図であ
る。
FIG. 11 is a plan view showing another example of a conventional calibration method.

【図12】図11の縦断面図である。FIG. 12 is a vertical cross-sectional view of FIG.

【符号の説明】[Explanation of symbols]

1 被処理基板 2 処理チャンバ 3 校正用基板 4 ゲートバルブ 5 真空ベローズ 6 水平方向に前進及び後進させる
手段 7 アーム 9 熱電対 10,10′ 保持ピン 12 放射温度計測温領域 13 加熱プレート 16 上下に駆動させる手段
1 substrate to be processed 2 processing chamber 3 substrate for calibration 4 gate valve 5 vacuum bellows 6 means for moving forward and backward in a horizontal direction 7 arm 9 thermocouple 10, 10 'holding pin 12 radiation temperature measurement temperature region 13 heating plate 16 driving up and down Means to make

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】放射温度計で測定した温度と、熱電対で測
定した温度とを比較して、枚葉処理装置の被処理基板の
正確な測温、加熱出力の制御に対する補正または放射温
度計の故障を検知する等の温度校正方法に於いて、被処
理基板と同材質又は同等の熱伝導及び放射率を有する耐
熱材料基板に熱電対を取着することにより校正用基板を
形成し、該校正用基板を熱処理チャンバー内の放射温度
計で基板を測温する位置に移動させて測温し、測温後は
熱処理チャンバー外に移動させることを特徴とする基板
の温度校正方法。
1. A temperature measured by a radiation thermometer and a temperature measured by a thermocouple are compared to accurately measure temperature of a substrate to be processed in a single-wafer processing apparatus, correction for control of heating output, or a radiation thermometer. In the temperature calibration method such as detecting a failure of, a calibration substrate is formed by attaching a thermocouple to a heat-resistant material substrate having the same material or the same thermal conductivity and emissivity as the substrate to be processed, A method of calibrating a temperature of a substrate, which comprises moving a calibration substrate to a position where the temperature is measured by a radiation thermometer in a heat treatment chamber, measuring the temperature, and then moving the temperature outside the heat treatment chamber.
【請求項2】前記校正用基板は、ゲートバルブを通過し
て、前記熱処理チャンバー内に導入し、使用しないとき
は前記ゲートバルブを通過して前記熱処理チャンバーか
ら隔離するように構成してなる請求項1に記載の校正方
法。
2. The calibration substrate passes through a gate valve and is introduced into the heat treatment chamber, and when not in use, passes through the gate valve to be isolated from the heat treatment chamber. The calibration method according to Item 1.
【請求項3】前記校正用基板に複数の熱電対を取着し、
該構成用基板の面内温度分布を定期的に測定し、熱源の
不具合を検知する請求項1に記載の校正方法。
3. A plurality of thermocouples are attached to the calibration substrate,
The calibration method according to claim 1, wherein the in-plane temperature distribution of the constituent substrate is regularly measured to detect a defect of the heat source.
【請求項4】前記校正用基板は、水平方向又は水平方向
及び上下方向に移動し得るように構成してなる請求項1
に記載の校正方法。
4. The calibration substrate is constructed so as to be movable in the horizontal direction or in the horizontal and vertical directions.
Calibration method described in.
【請求項5】被処理基板と同材質又は同等の熱伝導及び
放射率を有する耐熱材料基板に熱電対を取着することに
より形成した校正用基板と、該校正用基板を水平方向又
は水平及び上下方向に移動させるアームと、該校正用基
板の熱処理チャンバーへのゲートとなるゲートバルブ
と、該バルブに連結したベローズ継手とを具備してな
り、前記校正用基板を前記ゲートバルブを開いて前記熱
処理チャンバー内に導入するときは、前記ベローズ継手
を圧縮し、前記校正用基板を熱処理チャンバーから隔離
する時は前記ベローズ継手を伸長させるように構成して
なることを特徴とする温度校正装置。
5. A calibration substrate formed by attaching a thermocouple to a heat-resistant material substrate having the same material or the same thermal conductivity and emissivity as the substrate to be processed, and the calibration substrate in the horizontal or horizontal direction. It comprises an arm for moving in the vertical direction, a gate valve serving as a gate to the heat treatment chamber of the calibration substrate, and a bellows joint connected to the valve, and the calibration substrate is opened by opening the gate valve. The temperature calibrating device is configured so that the bellows joint is compressed when being introduced into the heat treatment chamber, and that the bellows joint is elongated when the calibration substrate is separated from the heat treatment chamber.
【請求項6】前記校正用基板を、弾性を有する保持ピン
を介して、前記アームに連結してなる請求項5に記載の
温度校正装置。
6. The temperature calibrating device according to claim 5, wherein the calibration substrate is connected to the arm via a holding pin having elasticity.
JP22715494A 1994-08-18 1994-08-18 Method and apparatus for calibrating temperature of board Pending JPH0862046A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22715494A JPH0862046A (en) 1994-08-18 1994-08-18 Method and apparatus for calibrating temperature of board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22715494A JPH0862046A (en) 1994-08-18 1994-08-18 Method and apparatus for calibrating temperature of board

Publications (1)

Publication Number Publication Date
JPH0862046A true JPH0862046A (en) 1996-03-08

Family

ID=16856347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22715494A Pending JPH0862046A (en) 1994-08-18 1994-08-18 Method and apparatus for calibrating temperature of board

Country Status (1)

Country Link
JP (1) JPH0862046A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999008494A1 (en) * 1997-08-11 1999-02-18 Ohkura Electric Co., Ltd. Temperature measuring type outside connecting mechanism for printed wiring board
JP2001257169A (en) * 2000-02-01 2001-09-21 Asm America Inc Temperature control method of machining chamber, semiconductor machining device, and sensor calibration method
JP2006147943A (en) * 2004-11-22 2006-06-08 Kokusai Electric Semiconductor Service Inc Substrate processor and semiconductor device manufacturing method
JP2015081816A (en) * 2013-10-22 2015-04-27 Jfeスチール株式会社 Radiation thermometer calibration device and radiation thermometer calibration method
CN105241581A (en) * 2015-10-08 2016-01-13 中冶南方工程技术有限公司 Temperature measurement, adjustment and calibration method and system for radiation pyrometer for continuous annealing furnace
JP2017075360A (en) * 2015-10-14 2017-04-20 株式会社アルバック Sputtering device
CN114279582A (en) * 2021-12-28 2022-04-05 东部超导科技(苏州)有限公司 Arc-shaped plate surface temperature testing method for producing superconducting strip

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999008494A1 (en) * 1997-08-11 1999-02-18 Ohkura Electric Co., Ltd. Temperature measuring type outside connecting mechanism for printed wiring board
JP2001257169A (en) * 2000-02-01 2001-09-21 Asm America Inc Temperature control method of machining chamber, semiconductor machining device, and sensor calibration method
JP2006147943A (en) * 2004-11-22 2006-06-08 Kokusai Electric Semiconductor Service Inc Substrate processor and semiconductor device manufacturing method
JP2015081816A (en) * 2013-10-22 2015-04-27 Jfeスチール株式会社 Radiation thermometer calibration device and radiation thermometer calibration method
CN105241581A (en) * 2015-10-08 2016-01-13 中冶南方工程技术有限公司 Temperature measurement, adjustment and calibration method and system for radiation pyrometer for continuous annealing furnace
JP2017075360A (en) * 2015-10-14 2017-04-20 株式会社アルバック Sputtering device
CN114279582A (en) * 2021-12-28 2022-04-05 东部超导科技(苏州)有限公司 Arc-shaped plate surface temperature testing method for producing superconducting strip

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