JPH086028A - Liquid crystal display device - Google Patents

Liquid crystal display device

Info

Publication number
JPH086028A
JPH086028A JP27883394A JP27883394A JPH086028A JP H086028 A JPH086028 A JP H086028A JP 27883394 A JP27883394 A JP 27883394A JP 27883394 A JP27883394 A JP 27883394A JP H086028 A JPH086028 A JP H086028A
Authority
JP
Japan
Prior art keywords
liquid crystal
orientation
pretilt angle
resist
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP27883394A
Other languages
Japanese (ja)
Other versions
JP2624197B2 (en
Inventor
憲一 ▲高▼取
Kenichi Takatori
Shigeyoshi Suzuki
成嘉 鈴木
Ken Sumiyoshi
研 住吉
Setsuo Kaneko
節夫 金子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP27883394A priority Critical patent/JP2624197B2/en
Priority to US08/424,123 priority patent/US5781262A/en
Priority to KR1019950009489A priority patent/KR950029830A/en
Publication of JPH086028A publication Critical patent/JPH086028A/en
Application granted granted Critical
Publication of JP2624197B2 publication Critical patent/JP2624197B2/en
Priority to US09/096,607 priority patent/US6081314A/en
Priority to US09/542,110 priority patent/US6323922B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To realize safe divided orientation and to eliminate deterioration of display performance, such as after-images by setting the pretilt angle in liquid crystal sections where spray type deformation takes place larger than the pretilt angle in the liquid crystal sections where deformation exclusive thereof takes place. CONSTITUTION:An oriented film 4 is formed by applying a polyimide on a glass substrate 1 formed with a tin oxide (ITS) film 23 and baking the coating. The oriented film 4 is partly protected by using a resist after first time of rubbing and is subjected to second time of rubbing and thereafter, the resist is peeled. At this time, a difference in the pretilt angle arises in the part coated with the resist and the part not coated with the resist. The pretilt angle near the substrate 1 subjected to a divided orientation treatment in the regions 5 where the spray type deformation associated with instability in terms of energy takes place among the liquid crystal sections varying in the orientation state is designed to be larger than the pretilt angle near the substrate in the regions 6 where the deformation exclusive of the spray type takes place by using the difference of the pretilt angles.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は液晶表示装置に関し、更
に詳しくは基板上に複数の領域を設けることにより広視
野な表示を得る液晶表示装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly to a liquid crystal display device having a plurality of regions on a substrate to obtain a wide-field display.

【0002】[0002]

【従来の技術】広視野角化を目的として複数の領域を設
けた液晶表示素子に関しては、特開昭57−18673
5号公報、特開昭60−211422号公報、特開昭6
3−106624号公報、特開昭64−88520号公
報、特開平1−245223号公報、特開平5−203
951号公報等に記載されている。その主旨は、1つの
画素を複数の領域に分割し、異なる領域内での液晶の配
向方向を、互いに視覚依存性を補うように規定すること
である。この液晶の配向方向を規定する方法として、酸
化珪素膜の斜方蒸着、ポリイミド樹脂の薄膜をラビング
する方法があり、工程の簡便さから、特にポリイミド薄
膜をラビングする方法が広く用いられている。ここで用
いられるポリイミド樹脂としては、特開昭61−479
32号公報、特開昭61−174725号公報に示され
たもの、及び、商品名では、日産化学製SE−731
1、日本合成ゴム製AL1051などがある。
2. Description of the Related Art A liquid crystal display element provided with a plurality of regions for the purpose of widening the viewing angle is disclosed in JP-A-57-18673.
5, JP-A-60-212142, JP-A-6
3-106624, JP-A-64-88520, JP-A-1-245223, and JP-A-5-203.
951 and the like. The gist is to divide one pixel into a plurality of regions and to define the alignment directions of the liquid crystal in different regions so as to complement each other in visual dependency. As a method of defining the alignment direction of the liquid crystal, there is a method of oblique vapor deposition of a silicon oxide film, a method of rubbing a thin film of a polyimide resin, and a method of rubbing a polyimide thin film is widely used because of the simplicity of the process. The polyimide resin used here is, for example, JP-A-61-479.
32, JP-A 61-174725, and SE-731 manufactured by Nissan Kagaku Co., Ltd.
There are AL1051 made by Japan Synthetic Rubber and the like.

【0003】1つの画素を複数の領域に分割するために
は、1つの画素内のラビング方向を変化させることが必
要であるが、その具体的な方法に関しては、特開昭60
−211422号公報、特開昭5−203951号公報
などに述べられている。例えば、特開昭60−2114
22号公報には、1回目のラビング後に画素の1部をフ
ォトレジスト層で保護しておき、2回目のラビングを行
った後、このフォトレジスト層を剥離するという操作を
繰り返すことで、1画素を複数の領域に分割することが
述べられている。さらに、特開昭5−173137号公
報、特開昭5−203951号公報には、一方の基板を
分割配向処理を施し、もう一方の基板に全面均一配向処
理を施し、分割配向処理を施した方の基板のプレチルト
角を、全面均一配向処理を施した基板のプレチルト角と
ほぼ同一にするか、または、それ以上にすることによ
り、分割配向処理を施した基板における液晶層の配向が
支配的になり、少ない工程数で、分割配向が可能である
ことが、述べられている。
In order to divide one pixel into a plurality of regions, it is necessary to change the rubbing direction within one pixel. A specific method for doing so is Japanese Patent Laid-Open No. Sho 60.
These are described in, for example, Japanese Patent Publication No. 211422 and Japanese Patent Application Laid-Open No. 5-203951. For example, JP-A-60-2114
In Japanese Patent Application Publication No. 22, the operation of protecting a part of the pixel with a photoresist layer after the first rubbing, performing the second rubbing, and peeling off the photoresist layer is repeated. Is divided into a plurality of regions. Further, in JP-A-5-173137 and JP-A-5-203951, one substrate is subjected to a division alignment treatment, and the other substrate is subjected to a uniform alignment treatment over the entire surface to perform a division alignment treatment. By making the pretilt angle of the other substrate almost equal to or more than the pretilt angle of the substrate subjected to uniform alignment treatment over the entire surface, the alignment of the liquid crystal layer in the substrate subjected to the divided alignment treatment is dominant. Therefore, it is described that the divisional alignment can be performed with a small number of steps.

【0004】[0004]

【発明が解決しようとする課題】しかし、このような方
法で分割配向を行った場合、ラビング方向の組合せに注
意せずにセルを作製すると、一方の領域が支配的にな
り、良好な分割配向が得られないという問題があった。
However, in the case of dividing orientation by such a method, if a cell is produced without paying attention to the combination of rubbing directions, one region becomes dominant and good dividing orientation is obtained. There was a problem that could not be obtained.

【0005】また、分割配向が得られた場合でも、分割
配向の境目にディスクリネーションラインが発生し、特
に、液晶を駆動させるための電圧を印加した場合、ディ
スクリネーションラインが移動するといった現象が見ら
れた。このディスクリネーションラインの移動は、残像
として観察され、表示素子の性能を劣化させていた。
[0005] Even when the divided orientation is obtained, a disclination line is generated at the boundary between the divided orientations. In particular, when a voltage for driving the liquid crystal is applied, the disclination line moves. It was observed. This movement of the disclination line was observed as an afterimage, deteriorating the performance of the display element.

【0006】本発明の目的は、安定な分割配向を実現
し、残像などの表示性能を劣化させる現象をなくした広
視野の液晶表示素子を提供することにある。
An object of the present invention is to provide a liquid crystal display device having a wide field of view, which realizes stable divisional alignment and eliminates a phenomenon such as an afterimage that deteriorates the display performance.

【0007】[0007]

【課題を解決するための手段】本発明では、分割された
液晶区分のうち、エネルギー的により不安定なスプレイ
型変形をする液晶区分中で、分割配向処理を施した基板
近傍のプレチルト角が、それ以外の変形をする液晶区分
のプレチルト角よりも大きくなるようにし、且つ、小さ
なプレチルト角を有する液晶区分が同一基板上の電極間
の電界が弱い能動素子側に位置する。
According to the present invention, the pretilt angle in the vicinity of the substrate subjected to the split alignment treatment in the split liquid crystal section which undergoes a splay-type deformation which is more energetically unstable among the divided liquid crystal sections, A liquid crystal section having a smaller pretilt angle and having a smaller pretilt angle is located on the active element side where the electric field between the electrodes on the same substrate is weaker than the pretilt angle of the liquid crystal section that undergoes other deformation.

【0008】[0008]

【作用】分割配向を実現する際、特開昭60−2114
22号公報、特開平5−203951号公報に開示され
ているように、レジストを用いたPR工程を用いる。1
回目のラビングの後、レジストを用い配向膜の一部を保
護し、2回目のラビングを行った後、レジストを剥離液
で剥離する。このとき通常は、レジストに覆われていた
部分とそうでない部分とで、プレチルト角に違いが生じ
る。このプレチルト角の差を利用して、配向状態の異な
る液晶区分のうち、エネルギー的に不安定になるスプレ
イ型変形をする領域での、分割配向処理を施した基板近
傍のプレチルト角が、スプレイ型変形以外の変形をする
領域での、基板近傍のプレチルト角よりも大きくなるよ
うに設計することができる。
When the split orientation is realized, the method disclosed in JP-A-60-2114 is used.
As disclosed in Japanese Unexamined Patent Application Publication No. 22-22, and Japanese Patent Application Laid-Open No. 5-203951, a PR process using a resist is used. 1
After the rubbing for the second time, a part of the alignment film is protected with a resist, and after rubbing for the second time, the resist is stripped with a stripping solution. At this time, usually, a difference occurs in the pretilt angle between the portion covered with the resist and the portion not covered with the resist. Utilizing this difference in pretilt angle, the pretilt angle in the vicinity of the substrate subjected to the split alignment treatment in the splay-type deformation region where the energies become unstable among the liquid crystal sections having different alignment states is changed to the splay type. It can be designed to be larger than the pretilt angle near the substrate in a region where deformation other than deformation occurs.

【0009】例えば、1画素を方向が180°異なった
ラビングにより2つの領域に分割し、ねじれネマチック
(TN)効果を利用した液晶表示素子を構成したとする
と、この2つの領域はエネルギー的に安定である通常の
TN変形をする領域と、エネルギー的に不安定であるス
プレイ型TN変形をする領域が生じる。このとき、どち
らの領域のプレチルト角を大きくするかは、セルを組む
ときのラビングの方向の組合せにより、自由に設計する
ことができる。そこで、分割配向処理を施した基板1近
傍のプレチルト角を、エネルギー的に不安定であるスプ
レイ型TN変形をする領域での方が、通常のTN変形を
する領域でより、大きくすれば、分割の安定性が増し、
ディスクリネーションラインがより強く、分割配向処理
の境界に固定されることになる。これに対し、通常のT
N変形をする領域での、基板近傍のプレチルト角の方
が、スプレイ型TN変形する領域での、プレチルト角よ
り大きくなるようにすると、ディスクリネーションライ
ンが十分に固定されず、実際に駆動を行うと、横方向電
界の影響でディスクリネーションラインが移動し、表示
に悪影響を与える。また、多くの区分は、分割配向でき
ない。更に、小さなプレチルト角を有する液晶区分は横
方向の電界の影響を受けやすいため、走査電極線と画素
電極間の幅が広く横方向の電界すなわち同一基板上の電
極間の電界が弱い能動素子側に、小さなプレチルト角を
有する液晶区分が位置するようにする。この構造によ
り、分割された配向がより安定に存在する事になる。
For example, if one pixel is divided into two regions by rubbing in which directions differ by 180 ° to constitute a liquid crystal display element utilizing the twisted nematic (TN) effect, these two regions are energetically stable. There is a region where the normal TN deformation is performed and a region where the spray type TN deformation is unstable in terms of energy. At this time, it is possible to freely design which region has a larger pretilt angle depending on a combination of rubbing directions when cells are assembled. Therefore, if the pretilt angle in the vicinity of the substrate 1 that has been subjected to the split orientation processing is made larger in the region where the splay-type TN deformation that is unstable in terms of energy is performed, than in the region where the normal TN deformation is performed, the division is performed. Increases the stability of
The disclination lines are stronger and will be fixed at the boundaries of the split orientation process. In contrast, the usual T
If the pretilt angle near the substrate in the area where the N deformation is performed is larger than the pretilt angle in the area where the splay type TN deformation is performed, the disclination line is not sufficiently fixed, and the actual drive is performed. When this is done, the disclination line moves due to the influence of the horizontal electric field, which adversely affects the display. Also, many segments cannot be split orientation. Further, since the liquid crystal section having a small pretilt angle is susceptible to the lateral electric field, the width between the scanning electrode line and the pixel electrode is wide and the lateral electric field, that is, the electric field between the electrodes on the same substrate is weak. Next, a liquid crystal section having a small pretilt angle is positioned. With this structure, the divided orientation exists more stably.

【0010】なお、ここでは、説明のため、2つの領域
に分割する例を述べたが、領域の数が増えても、同様の
ことがいえる。また、配向膜の上でレジストで覆われて
いた部分と、そうでない部分とでのプレチルト角の差を
利用したが、異なった種類の配向膜を利用してもよい。
さらに、上記の例では、異なるプレチルト角を得るため
に、ポリイミド配向膜のラビングを利用したが、部分的
にレジストで覆った酸化珪素(SiO、SiOx 、Si
2 )などの無機物の斜方蒸着法を利用してもよい。
Here, for the sake of explanation, an example in which the image is divided into two regions has been described, but the same can be said even if the number of regions is increased. Although the difference in pretilt angle between the portion covered with the resist on the alignment film and the portion not covered with the resist is used, different types of alignment films may be used.
Further, in the above example, rubbing of the polyimide alignment film was used to obtain different pretilt angles, but silicon oxide (SiO, SiO x , Si) partially covered with resist was used.
An oblique vapor deposition method of an inorganic material such as O 2 ) may be used.

【0011】また、上記の説明では分割配向処理を施し
た基板近傍のプレチルト角のみについて説明した。全面
均一配向処理を施した方の基板近傍のプレチルト角は、
特に規定はないが、安定性の観点から、少なくとも分割
配向処理を施した基板近傍の大きい方のプレチルト角よ
り小さいことが望ましい。
Further, in the above description, only the pretilt angle in the vicinity of the substrate which has been subjected to the division alignment treatment has been described. The pretilt angle in the vicinity of the substrate that has been subjected to uniform alignment treatment over the entire surface is
Although not particularly specified, from the viewpoint of stability, it is preferable that the pre-tilt angle is smaller than at least the larger pre-tilt angle near the substrate subjected to the split alignment treatment.

【0012】[0012]

【実施例】以下、本発明を実施例を用いて、詳細に説明
する。
EXAMPLES The present invention will be described in detail below with reference to examples.

【0013】(実施例1)図2に分割配向プロセスの概
略を示す。酸化スズ(ITO)を成膜したガラス基板を
洗浄後、高プレチルト角を与えるポリイミド(東レ社
製、K−100)をスピン塗布し、200℃で1時間焼
成した。ラビング装置を用い第一回目のラビングを行っ
た(図2(a)図)後、レジスト(東京応化工業社製
商品名:OFPR−800C)を1μm 厚になるように
スピン塗布し、85℃で30分焼成した(図2(b)
図)。500μm 角の市松状のマスクを用い、露光・現
像を行い、純水でリンスした後、75℃で20分乾燥を
行った。光学顕微鏡を用い、パターンを観察したとこ
ろ、500μm 角のレジストパターンが市松状に形成さ
れていた(図2(c)図)。
Embodiment 1 FIG. 2 shows an outline of a split orientation process. After washing the glass substrate on which tin oxide (ITO) was formed, polyimide (K-100 manufactured by Toray Industries, Inc.) that gives a high pretilt angle was spin-coated and baked at 200 ° C. for 1 hour. After performing the first rubbing using the rubbing apparatus (Fig. 2 (a)), a resist (manufactured by Tokyo Ohka Kogyo Co., Ltd.)
(Trade name: OFPR-800C) was spin-coated to a thickness of 1 μm and baked at 85 ° C. for 30 minutes (FIG. 2 (b)).
Figure). Using a 500 μm square checkered mask, exposure and development were performed, rinsed with pure water, and then dried at 75 ° C. for 20 minutes. When the pattern was observed using an optical microscope, a resist pattern of 500 μm square was formed in a checkered pattern (FIG. 2C).

【0014】次に、ラビング装置を用い、1回目のラビ
ングとは逆方向にラビングを行った(図2(d)図)。
レジストを剥離するために、この基板を、乳酸エチルで
2分間処理した後、純水でリンスし、110℃で30分
間、乾燥を行い、主基板とした(図2(e)図)。
Next, rubbing was performed using a rubbing device in a direction opposite to the first rubbing (FIG. 2D).
To remove the resist, the substrate was treated with ethyl lactate for 2 minutes, rinsed with pure water, and dried at 110 ° C. for 30 minutes to obtain a main substrate (FIG. 2E).

【0015】対向基板としてITOを成膜したガラス基
板を洗浄後、低プレチルト角を与えるポリイミド(日本
合成ゴム社製、AL−1051)をスピン塗布し、20
0℃で1時間焼成した。
After cleaning a glass substrate on which ITO was formed as a counter substrate, a polyimide (AL-1051, manufactured by Japan Synthetic Rubber Co., Ltd.) which gives a low pretilt angle was spin-coated to give 20.
It was baked at 0 ° C. for 1 hour.

【0016】このようにして作製した二枚の基板をギャ
ップが6μm になるように、かつ、ラビング方向が互い
に直角になるように、球形のスペーサーを介して接着剤
で貼り合わせセルを作製した。このセルに左カイラル材
を溶解させた通常のネマチック液晶を注入し、注入口を
封止した。このとき、レジストパターニング後レジスト
が残っていた部分の配向が、スプレイ型TN配向とな
り、レジストが残っていなかった部分の配向が通常のT
N配向となるように、ラビング方向をあわせセルを作製
した。
The two substrates thus produced were bonded to each other with an adhesive via a spherical spacer so that the gap was 6 μm and the rubbing directions were perpendicular to each other. A normal nematic liquid crystal in which the left chiral material was dissolved was injected into this cell, and the injection port was sealed. At this time, the orientation of the portion where the resist remains after the resist patterning becomes the splay type TN orientation, and the orientation of the portion where the resist does not remain is the normal T orientation.
A rubbing direction was adjusted so as to be N-aligned to prepare a cell.

【0017】作製したセルに±3V周期16.7mse
cの矩形波を印加し、偏光顕微鏡で液晶の配向状態を観
察した。その結果、良好な分割配向が確認された。
[0017] A ± 3 V cycle of 16.7 msec is applied to the fabricated cell.
A rectangular wave of c was applied and the alignment state of the liquid crystal was observed with a polarization microscope. As a result, good split orientation was confirmed.

【0018】次に、高プレチルト角を与えるポリイミド
(K−100)のレジストが残っていた部分と残ってい
なかった部分のプレチルト角を、上記のTNセルを作製
したのと全く同じ条件になるように、それぞれの条件で
アンチパラレルセルを作製し、クリスタルローテーショ
ン法によって測定した。その結果、レジストが残ってい
た部分のプレチルト角は5.5°、レジストが残ってい
なかった部分のプレチルト角は1°と求められた。ま
た、低プレチルト角を与えるポリイミド(AL−105
1)のプレチルト角をやはりTNセルを作製したものと
同じ条件で、アンチパラレルセルを作成し、クリスタル
ローテーション法を用いて、測定した。その結果、プレ
チルト角は1°と求められた。
Next, the pretilt angles of the portion where the resist of polyimide (K-100) giving a high pretilt angle was left and the portion where the resist was not left were set so as to be exactly the same conditions as in the case where the above TN cell was manufactured. Next, an anti-parallel cell was prepared under each condition, and the measurement was performed by a crystal rotation method. As a result, the pretilt angle of the part where the resist remained was 5.5 °, and the pretilt angle of the part where the resist did not remain was 1 °. In addition, polyimide (AL-105) which gives a low pretilt angle
The pretilt angle of 1) was measured under the same conditions as those for forming the TN cell, by preparing an anti-parallel cell and using the crystal rotation method. As a result, the pretilt angle was determined to be 1 °.

【0019】(比較例1)実施例1と全く同様の方法
で、対向基板側のラビング方向のみ逆向きにして、レジ
ストパターニング後レジストが残っていた部分の配向
が、通常のTN配向となり、レジストが残っていなかっ
た部分の配向がスプレイ型TN配向となるように、ラビ
ング方向をあわせセルを作製した。作製したセルに±3
V周期16.7msecの矩形波を印加し、偏光顕微鏡
で液晶の配向状態を観察した。その結果、分割配向され
た領域が形成されたが、一方の領域が狭くなり、良好な
分割配向ができなかった。
(Comparative Example 1) In the same manner as in Example 1, only the rubbing direction on the counter substrate side was reversed, and the orientation of the portion where the resist remained after resist patterning became the normal TN orientation. A cell was prepared so that the rubbing direction was aligned so that the orientation of the portion where the particles did not remain was the splay type TN orientation. ± 3 on the fabricated cell
A rectangular wave having a V period of 16.7 msec was applied, and the alignment state of the liquid crystal was observed with a polarizing microscope. As a result, regions having a divided orientation were formed, but one region was narrowed, and good divided orientation could not be achieved.

【0020】(実施例2)実施例1と全く同様の方法
で、対向側の低プレチルト角を与える配向膜のみ、日産
化学社製RN−1006に変えて、実験を行った。その
結果、良好な分割配向が確認された。なお、このRN−
1006のプレチルト角を、実施例1と同様の方法でア
ンチパラレルセルを作製し、クリスタルローテーション
法で測定したところ、3°と求められた。
Example 2 An experiment was performed in exactly the same manner as in Example 1, except that only the alignment film providing a low pretilt angle on the opposite side was changed to RN-1006 manufactured by Nissan Chemical Industries, Ltd. As a result, good split orientation was confirmed. In addition, this RN-
The pretilt angle of 1006 was determined to be 3 ° when an antiparallel cell was prepared by the same method as in Example 1 and measured by the crystal rotation method.

【0021】(比較例2)実施例2と全く同様の方法
で、対向基板側のラビング方向のみ逆向きにして、レジ
ストパターニング後レジストが残っていた部分の配向
が、通常のTN配向となり、レジストが残っていなかっ
た部分の配向がスプレイ型TN配向となるように、ラビ
ング方向をあわせセルを作製した。作製したセルに±3
V周期16.7msecの矩形波を印加し、偏光顕微鏡
で液晶の配向状態を観察した。その結果、分割配向され
た領域が形成されたが、時間の経過とともにドメインが
つぶれ、安定な分割配向ができなかった。
(Comparative Example 2) In the same manner as in Example 2, only the rubbing direction on the counter substrate side was reversed, and the orientation of the portion where the resist remained after resist patterning became the normal TN orientation. A cell was prepared so that the rubbing direction was aligned so that the orientation of the portion where the particles did not remain was the splay type TN orientation. ± 3 on the fabricated cell
A rectangular wave having a V period of 16.7 msec was applied, and the alignment state of the liquid crystal was observed with a polarizing microscope. As a result, a region with split orientation was formed, but the domain collapsed with the passage of time, and stable split orientation was not possible.

【0022】(実施例3)実施例1と全く同様の方法
で、高プレチルト角を与える配向膜とその焼成温度のみ
を、日産化学社製RN−715と250℃に変え、実験
を行った。その結果、良好な分割配向が確認された。な
あ、このRN−715のプレチルト角を、実施例1と全
く同様の方法で、クリスタルローテーション法で測定し
た。その結果、レジストが残っていた部分のプレチルト
角は12°、レジストが残っていなかった部分のプレチ
ルト角は9°と求められた。
Example 3 An experiment was conducted in the same manner as in Example 1, except that the alignment film giving a high pretilt angle and the firing temperature thereof were changed to RN-715 manufactured by Nissan Chemical Co., Ltd. and 250 ° C. As a result, good split orientation was confirmed. Incidentally, the pretilt angle of this RN-715 was measured by the crystal rotation method in exactly the same manner as in Example 1. As a result, the pretilt angle of the portion where the resist remained was 12 °, and the pretilt angle of the portion where the resist remained was 9 °.

【0023】(実施例4)実施例1と全く同様の方法
で、高プレチルト角を与える配向膜とその焼成温度のみ
を、日立化成社製LC−102と250℃に変え、実験
を行った。その結果、良好な分割配向が確認された。な
お、このLC−102のプレチルト角を、実施例1と全
く同様の方法で、クリスタルローテーション法で測定し
た。その結果、レジストが残っていた部分のプレチルト
角は3°、レジストが残っていなかった部分のプレチル
ト角は2°と求められた。
Example 4 An experiment was conducted in exactly the same manner as in Example 1, except that only the alignment film giving a high pretilt angle and the firing temperature were changed to 250 ° C. with LC-102 manufactured by Hitachi Chemical Co., Ltd. As a result, good split orientation was confirmed. In addition, the pretilt angle of this LC-102 was measured by the crystal rotation method in exactly the same manner as in Example 1. As a result, the pretilt angle of the portion where the resist remained was 3 °, and the pretilt angle of the portion where the resist did not remain was 2 °.

【0024】(実施例5)実施例1と同様の方法で、高
プレチルト角を与える配向膜(日立化成社製LC−20
01)に変え、焼成温度を250℃にした場合、レジス
トが残っていた部分と、残っていなかった部分のプレチ
ルト角を測定した。その結果、レジストが残っていた部
分のプレチルト角は5°、レジストが残っていなかった
部分のプレチルト角は6°と求められた。
(Embodiment 5) In the same manner as in Embodiment 1, an alignment film giving a high pretilt angle (LC-20 manufactured by Hitachi Chemical Co., Ltd.)
When the baking temperature was changed to 01) and the baking temperature was set to 250 ° C., the pretilt angles of the portion where the resist remained and the portion where the resist did not remain were measured. As a result, the pretilt angle of the portion where the resist remained was determined to be 5 °, and the pretilt angle of the portion where the resist did not remain was determined to be 6 °.

【0025】実施例1と同様にして、高プレチルト角を
与える配向膜とその焼成温度を、日立化成製LC−20
01と250℃に変え、また、ラビング方向を変えて、
レジストパターニング後レジストが残っていた部分の配
向が、通常のTN配向となり、レジストが残っていなか
った部分の配向がスプレイ型TN配向となるように、ラ
ビング方向をあわせセルを作成した。作成したセルに±
3V周期16.7msecの矩形波を印加し、偏光顕微
鏡で液晶の配向状態を観察した。その結果、良好な分割
配向が確認された。
In the same manner as in Example 1, the alignment film giving a high pretilt angle and the firing temperature thereof were LC-20 manufactured by Hitachi Chemical.
01 and 250 ° C, and change the rubbing direction,
The rubbing direction was adjusted to form a cell such that the orientation of the portion where the resist remained after the resist patterning became the normal TN orientation, and the orientation of the portion where the resist did not remain became the spray type TN orientation. ±
A rectangular wave having a 3V cycle of 16.7 msec was applied, and the alignment state of the liquid crystal was observed with a polarization microscope. As a result, good split orientation was confirmed.

【0026】(実施例6)次に、上記の配向膜の組合せ
を、TFT基板とカラーフィルター基板に適用した。
Example 6 Next, the combination of the above-mentioned alignment films was applied to a TFT substrate and a color filter substrate.

【0027】TFT基板としては、画素の中央にディス
クリネーションを遮光する幅12μm の遮光膜が設けら
れている以外は通常のTFT基板と同様である。TFT
基板に高プレチルト角を与えるポリイミド配向膜(K−
100)を、カラーフィルター側に低プレチルト角を与
える配向膜(AL−1051)を適用した。実施例1と
全く同様の方法で、画素の中央に分割境界がくるように
分割配向処理を行い、セルを作製した。このとき、レジ
ストパターニング後レジストが残っていた部分の配向
が、スプレイ型TN配向となり、レジストが残っていな
かった部分の配向が通常のTN配向となるように、ラビ
ング方向をあわせパネルを作製した。こうしてできたパ
ネルを駆動したところ、残像などの現象は見られなかっ
た。さらにパネルを虫めがねを用いて観察したところデ
ィスクリネーションは見られず、遮光膜の範囲内に隠さ
れていることがわかった。
The TFT substrate is the same as a normal TFT substrate except that a light-shielding film having a width of 12 μm for shielding disclination is provided at the center of a pixel. TFT
A polyimide alignment film (K- that gives a high pretilt angle to the substrate
100) was applied with an alignment film (AL-1051) that gives a low pretilt angle to the color filter side. In the same manner as in Example 1, a division alignment process was performed so that the division boundary was located at the center of the pixel, and a cell was produced. At this time, the rubbing direction was adjusted so that the orientation of the portion where the resist remained after the resist patterning became the splay-type TN orientation and the orientation of the portion where the resist did not remain became the normal TN orientation, and a panel was produced. When the panel thus formed was driven, no phenomenon such as an afterimage was observed. Further, when the panel was observed using a magnifying glass, no disclination was observed, and it was found that the panel was hidden within the range of the light-shielding film.

【0028】(比較例3)実施例6と全く同様の方法
で、ラビング方向のみ変えて、レジストが残っていた部
分の配向が、通常のTN配向となり、レジストが残って
いなかった部分の配向がスプレイ型TN配向となるよう
に、ラビング方向をあわせパネルを作製した。こうして
できたパネルを駆動したところ、残像などのディスクリ
ネーションに起因する現象が見られ、表示性能が劣化し
ていることがわかった。
(Comparative Example 3) In exactly the same manner as in Example 6, only the rubbing direction was changed, and the orientation of the portion where the resist remained was the normal TN orientation, and the orientation of the portion where the resist did not remain changed to the normal TN orientation. A rubbing direction was adjusted so that a splay-type TN orientation was obtained to produce a panel. When the panel thus produced was driven, a phenomenon such as an afterimage caused by disclination was observed, and it was found that the display performance was deteriorated.

【0029】(実施例7)実施例6と全く同様の方法
で、高プレチルト角を与える配向膜と焼成温度のみ、R
N−715、250℃に変え、全く同様の実験を行っ
た。その結果、残像などの現象は見られなかった。
(Example 7) In exactly the same manner as in Example 6, only the orientation film providing a high pretilt angle and the firing temperature
Exactly the same experiment was performed, changing to N-715 and 250 ° C. As a result, no phenomenon such as an afterimage was observed.

【0030】(比較例4)実施例7と全く同様の方法
で、ラビング方向のみ変えて、レジストが残っていた部
分の配向が、通常のTN配向となり、レジストが残って
いなかった部分の配向がスプレイ型TN配向となるよう
に、ラビング方向をあわせパネルを作製した。こうして
できたパネルを駆動したところ、残像などのディスクリ
ネーションに起因する現象が見られ、表示性能が劣化し
ていることがわかった。
(Comparative Example 4) In exactly the same manner as in Example 7, only the rubbing direction was changed, and the orientation of the portion where the resist remained was the normal TN orientation, and the orientation of the portion where the resist was not remained was changed. A rubbing direction was adjusted so that a splay-type TN orientation was obtained to produce a panel. When the panel thus produced was driven, a phenomenon such as an afterimage caused by disclination was observed, and it was found that the display performance was deteriorated.

【0031】(実施例8)実施例6と全く同様の方法
で、高プレチルト角を与える配向膜と焼成温度を、LC
−2001、250℃に変え、また、ラビング方向を変
えて、レジストが残っていた部分の配向が、スプレイ型
TN配向となり、レジストが残っていなかった部分の配
向が通常のTN配向となるように、ラビング方向をあわ
せパネルを作製し、全く同様の実験をおこなった。その
結果、残像などの現象は見られなかった。
(Embodiment 8) In exactly the same manner as in Embodiment 6, the orientation film for providing a high pretilt angle and the firing temperature were set to LC
-2001, changed to 250 ° C., and changed the rubbing direction so that the orientation of the portion where the resist remained was the spray type TN orientation, and the orientation of the portion where the resist was not remained was the normal TN orientation. The rubbing direction was adjusted to prepare a panel, and the same experiment was performed. As a result, no phenomenon such as an afterimage was observed.

【0032】(比較例5)実施例8と全く同様の方法
で、ラビング方向のみ変えて、レジストが残っていた部
分の配向が、通常のTN配向となり、レジストが残って
いなかった部分の配向がスプレイ型TN配向となるよう
に、ラビング方向をあわせパネルを作製した。こうして
できたパネルを駆動したところ、残像などのディスクリ
ネーションに起因する現象が見られ、表示性能が劣化し
ていることがわかった。
(Comparative Example 5) In the same manner as in Example 8, only the rubbing direction was changed, and the orientation of the portion where the resist remained was the normal TN orientation, and the orientation of the portion where the resist did not remain was changed. A panel was prepared so that the rubbing directions were aligned so as to have a splay type TN orientation. When the panel thus produced was driven, a phenomenon such as an afterimage caused by disclination was observed, and it was found that the display performance was deteriorated.

【0033】以下に、薄膜トランジスタアレイ付きの基
板内での電界と液晶配向について検討した実施例と比較
例を示す。
Examples and comparative examples in which the electric field and the liquid crystal orientation in the substrate with the thin film transistor array are examined are described below.

【0034】(実施例9)図4に露光時のマスク位置の
模式図を示す。また、図3に本実施例で使用した薄膜ト
ランジスタアレイの模式図を示す。この実施例において
は、能動素子としてアモルファスシリコンによる薄膜ト
ランジスタ14を用い、一単位画素の大きさを縦300
μm 、横100μm とした。走査電極線15、信号電極
線16は、スパッタ法で形成されたクロミウム(Cr)
を用い、線幅を10μm とした。更に、クロミウムを用
い、画素の中央にディスクリネーションを遮光する幅1
2μm の遮光膜11を設けた。ゲート絶縁膜には窒化シ
リコン(SiNx)を用いた。画素電極13は透明電極
である酸化インジウム錫(ITO)を用い、スパッタ法
により形成した。このように薄膜トランジスタ14をア
レイ状に形成したガラス基板を第一の基板17とした。
また、対向側の第二の基板18上には、ITOを用いた
透明電極19を形成し、更にカラーフィルタ12を染色
法によりアレイ状に形成しその上面にシリカを用いた保
護層を設けた。
(Embodiment 9) FIG. 4 shows a schematic view of mask positions during exposure. Further, FIG. 3 shows a schematic view of the thin film transistor array used in this example. In this embodiment, a thin film transistor 14 made of amorphous silicon is used as an active element, and the size of one unit pixel is 300 mm vertically.
μm and 100 μm in width. The scanning electrode lines 15 and the signal electrode lines 16 are made of chromium (Cr) formed by a sputtering method.
Was used to set the line width to 10 μm. In addition, a width of 1 is used to block the disclination in the center of the pixel using chromium.
A 2 μm light-shielding film 11 was provided. Silicon nitride (SiNx) was used for the gate insulating film. The pixel electrode 13 was formed by a sputtering method using indium tin oxide (ITO) which is a transparent electrode. The glass substrate on which the thin film transistors 14 were formed in an array in this manner was used as the first substrate 17.
Further, a transparent electrode 19 made of ITO is formed on the second substrate 18 on the opposite side, color filters 12 are further formed in an array by a dyeing method, and a protective layer made of silica is provided on the upper surface thereof. .

【0035】第一の基板を洗浄後、実施例1と同様の方
法で分割配向処理を施した。但し、露光・現像において
は、150μm 幅のストライプ状のマスクを用い、遮光
部11から走査電極線にわたって図4に示すようにマス
クし露光・現像を行った。この図4のマスク位置では、
後にプレチルト角の測定データを示すように、マスクさ
れレジストが残った部分のプレチルト角の方がマスクさ
れなかったためにレジストが残らなかった部分のプレチ
ルト角より高くなる。
After cleaning the first substrate, a split orientation treatment was performed in the same manner as in Example 1. However, in the exposure / development, a 150 μm wide stripe mask was used, and the mask was exposed and developed from the light shielding portion 11 to the scanning electrode line as shown in FIG. At the mask position in FIG.
As will be shown later on the measurement data of the pretilt angle, the pretilt angle of the portion where the resist remains after being masked is higher than the pretilt angle of the portion where the resist does not remain because the mask is not masked.

【0036】また、カラーフィルタを形成した第二の基
板を洗浄後、実施例1と同様に低プレチルト角を与える
ポリイミド(日本合成ゴム社製、AL−1051)をス
ピン塗布し、200℃で1時間焼成した。
After washing the second substrate having the color filter formed thereon, a polyimide (AL-1051, manufactured by Japan Synthetic Rubber Co., Ltd.) which gives a low pretilt angle was spin-coated in the same manner as in Example 1, and the coating was performed at 200 ° C. for 1 hour. Burned for hours.

【0037】このようにして作製した二枚の基板をギャ
ップが5.5μm になるように、かつ、ラビング方向が
互いに直角になるように、球形のシリカ粒子によるスペ
ーサーを介して接着剤で貼り合わせパネルを作製した。
このセルに左カイラル材を溶解させた通常の正の誘電異
方性を有するネマチック液晶を注入し、注入口を封止し
た。このとき、レジストパターニング後レジストが残っ
ていた部分の配向が、スプレイ型TN配向となり、レジ
ストが残っていなかった部分の配向が通常のTN配向と
なるように、第1の基板と第2の基板のラビング方向を
あわせ液晶表示装置を作製した。作製した液晶表示装置
を駆動した所、焼き付きなどの現象のない良好な表示が
得られた。更に、顕微鏡を用いて観察した所、透過光で
の観察ではディスクリネーションなどが見られず、一
方、反射光での観察によりディスクリネーションが遮光
部の範囲内に固定されていることが分かった。
The two substrates thus produced were bonded together with an adhesive through a spacer made of spherical silica particles so that the gap was 5.5 μm and the rubbing directions were perpendicular to each other. A panel was prepared.
A nematic liquid crystal having a normal positive dielectric anisotropy in which the left chiral material was dissolved was injected into this cell, and the injection port was sealed. At this time, the first substrate and the second substrate are arranged so that the orientation of the portion where the resist remains after the resist patterning becomes the splay type TN orientation and the orientation of the portion where the resist does not remain becomes the normal TN orientation. A rubbing direction was adjusted to produce a liquid crystal display device. When the manufactured liquid crystal display device was driven, a favorable display without a phenomenon such as image sticking was obtained. Furthermore, when observed using a microscope, no disclination was observed in transmitted light observation, while on the other hand, reflected light observation revealed that the disclination was fixed within the range of the light shielding portion. Was.

【0038】この時の基板表面での液晶配向の模式図を
図4のC−C′線に沿った断面図として図5に示す。
FIG. 5 is a schematic view of the liquid crystal alignment on the substrate surface at this time as a cross-sectional view taken along the line CC 'in FIG.

【0039】(比較例6)実施例9と全く同様の方法
で、カラーフィルタ側の第2の基板のラビング方向のみ
逆向きにして、レジストパターニング後レジストが残っ
ていた部分の配向が、通常のTN配向となり、レジスト
が残っていなかった部分の配向がスプレイ型TN配向と
なるように、ラビング方向をあわせ液晶表示装置を作製
した。作製した液晶表示装置を駆動した所、焼き付きな
どの現象が数多く発生した。顕微鏡で液晶の配向状態を
観察すると、分割配向された領域が形成されている画素
もあったが、多くの画素で一方の領域が狭くなるか、全
く分割されておらずディスクリネーションも所定の位置
に制御出来ていなかった。この時の基板表面での液晶配
向の模式図を図6に示す。実施例9の図5と異なり、ス
プレイ型変形をする液晶区分中での分割配向処理基板上
でのプレチルト角がそれ以外の変形をする区分中でのプ
レチルト角より低くなっている。
(Comparative Example 6) In the same manner as in Example 9, only the rubbing direction of the second substrate on the color filter side was reversed, and after the resist patterning, the orientation of the portion where the resist remained was normal. A liquid crystal display device was produced by aligning the rubbing directions so that the TN alignment was obtained and the alignment of the portion where no resist remained was the spray type TN alignment. When the manufactured liquid crystal display device was driven, many phenomena such as burn-in occurred. When observing the alignment state of the liquid crystal with a microscope, there were some pixels in which divided and aligned regions were formed, but in many pixels one region was narrowed, or the pixels were not divided at all and the disclination was also predetermined. I couldn't control the position. FIG. 6 shows a schematic diagram of the liquid crystal alignment on the substrate surface at this time. Unlike FIG. 5 of Example 9, the pretilt angle on the divided alignment treated substrate in the liquid crystal section undergoing splay type deformation is lower than the pretilt angle in the section subject to other deformation.

【0040】(比較例7)実施例9と同様の方法である
が、第一の基板上でのマスク位置を図7に示すように逆
方向とし、カラーフィルタ側のラビング方向も逆向きに
した液晶表示装置での例を示す。この比較例の構成で
は、図8に示すように、レジストパターニング後レジス
トが残っていた部分の配向が、スプレイ型TN配向とな
り、レジストが残っていなかった部分の配向が通常のT
N配向となるが、プレチルト角の低い方の液晶区分が横
方向の電界が強い方に位置する。作製した液晶表示装置
を駆動した所、焼き付きなどの現象が発生した。顕微鏡
で液晶の配向方向を観察すると、分割配向された領域が
形成されているが、ディスクリネーションが所定の位置
に制御出来ていないで遮光部からはみだしていた。
(Comparative Example 7) The same method as that of Example 9 was adopted, except that the mask position on the first substrate was reversed as shown in FIG. 7, and the rubbing direction on the color filter side was also reversed. An example in a liquid crystal display device will be described. In the configuration of this comparative example, as shown in FIG. 8, the orientation of the portion where the resist remained after the resist patterning became the splay type TN orientation, and the orientation of the portion where the resist did not remain was the normal T orientation.
Although the liquid crystal becomes N-oriented, the liquid crystal section having the lower pretilt angle is located in the direction where the lateral electric field is stronger. When the manufactured liquid crystal display device was driven, phenomena such as burn-in occurred. Observation of the orientation direction of the liquid crystal with a microscope revealed that a divided and oriented region was formed, but the disclination could not be controlled to a predetermined position, and it was protruding from the light shielding portion.

【0041】(実施例10)実施例9と全く同様の方法
で、対向側の低プレチルト角を与える配向膜のみ、日産
化学社製RN−1006に変えて、実験を行った。その
結果、焼き付き等の現象のない良好な表示が得られた。
Example 10 An experiment was conducted in exactly the same manner as in Example 9 except that only the alignment film giving a low pretilt angle on the opposite side was changed to RN-1006 manufactured by Nissan Chemical Industries, Ltd. As a result, a good display without a phenomenon such as image sticking was obtained.

【0042】(比較例8)実施例10と全く同様の方法
で、対向基板側のラビング方向のみ逆向きにして、レジ
ストパターニング後レジストが残っていた部分の配向
が、通常のTN配向となり、レジストが残っていなかっ
た部分の配向がスプレイ型TN配向となるように、ラビ
ング方向をあわせ液晶表示装置を作製した。作製した液
晶表示装置を駆動した所、焼き付きが数多く観察され
た。顕微鏡で液晶の配向状態を観察した結果、分割配向
された領域が形成されたが、時間の経過とともにドメイ
ンがつぶれ、安定な分割配向ができなかった。
(Comparative Example 8) In exactly the same manner as in Example 10, only the rubbing direction on the counter substrate side was reversed, and the orientation of the portion where the resist remained after resist patterning became the normal TN orientation. The rubbing direction was adjusted so that the orientation of the portion where no was left was the spray type TN orientation, to produce a liquid crystal display device. When the produced liquid crystal display device was driven, many burn-in images were observed. As a result of observing the alignment state of the liquid crystal with a microscope, regions with divided alignment were formed, but the domains collapsed over time, and stable divided alignment could not be achieved.

【0043】(実施例11)実施例9と全く同様の方法
で、高プレチルト角を与える配向膜とその焼成温度のみ
を、日産化学社製RN−715と250℃に変え、実験
を行った。その結果、焼き付き等の現象の無い良好な表
示が得られた。
Example 11 An experiment was carried out in exactly the same manner as in Example 9 except that only the alignment film giving a high pretilt angle and its baking temperature were changed to 250 ° C. with RN-715 manufactured by Nissan Chemical Industries, Ltd. As a result, a good display without a phenomenon such as image sticking was obtained.

【0044】(実施例12)実施例9と全く同様の方法
で、高プレチルト角を与える配向膜とその焼成温度のみ
を、日立化成社製LC−102と250℃に変え、実験
を行った。その結果、焼き付き等の現象の無い良好な表
示が得られた。
Example 12 An experiment was performed in exactly the same manner as in Example 9 except that only the alignment film giving a high pretilt angle and the firing temperature were changed to 250 ° C. with LC-102 manufactured by Hitachi Chemical Co., Ltd. As a result, a good display without a phenomenon such as image sticking was obtained.

【0045】(実施例13)実施例9と同様の方法で、
高プレチルト角を与える配向膜(日立化成社製LC−2
001)に変え、焼成温度を250℃に変え、また、ラ
ビング方向を変えて、レジストパターニング後レジスト
が残っていた部分の配向が、通常のTN配向となり、レ
ジストが残っていなかった部分の配向がスプレイ型TN
配向となるように、ラビング方向をあわせ液晶表示装置
を作製した。作製した液晶表示装置を駆動した所、焼き
付き等のない良好な表示が確認された。
(Embodiment 13) In the same manner as in Embodiment 9,
Alignment film giving high pretilt angle (LC-2 manufactured by Hitachi Chemical Co., Ltd.
001), the baking temperature was changed to 250 ° C., and the rubbing direction was changed so that the orientation of the portion where the resist remained after the resist patterning became the normal TN orientation, and the orientation of the portion where the resist did not remain changed to the normal TN orientation. Spray type TN
A rubbing direction was adjusted so that the liquid crystal display device was aligned. When the manufactured liquid crystal display device was driven, good display without image sticking was confirmed.

【0046】(実施例14)実施例9と配向膜やラビン
グ方向等は全く同一の構成で、薄膜トランジスタ側の基
板での画素が蓄積容量を有する構造について実験した。
使用した薄膜トランジスタアレイの構造を図9に示す。
図10に露光・現像時のマスク位置を、図11に液晶配
向の模式図を示す。このように蓄積容量部を有した構造
においても、作製した液晶表示装置では良好な表示が得
られた。
Example 14 An experiment was conducted on a structure in which the pixel on the substrate on the side of the thin film transistor had a storage capacitance with the same configuration as in Example 9 except for the alignment film and the rubbing direction.
The structure of the thin film transistor array used is shown in FIG.
FIG. 10 shows a mask position at the time of exposure / development, and FIG. 11 shows a schematic view of liquid crystal alignment. Even in the structure having the storage capacitor portion as described above, good display was obtained in the manufactured liquid crystal display device.

【0047】[0047]

【発明の効果】このように、スプレイ型TN変形をする
領域の、分割配向処理した基板近傍のプレチルト角の方
が、通常のTN変形をする領域の、基板近傍のプレチル
ト角よりも大きくすることで、安定した分割配向が得ら
れることがわかる。更に、プレチルト角が小さい液晶区
分が、横方向の電界が弱い能動素子側に位置させる事に
よって、安定な分割配向が得られることが分かる。した
がって、本発明によれば、視野角の広い液晶表示素子を
作製するために、工程数の少ない方法による分割配向処
理を行っても、安定な分割配向を得ることができる。
As described above, the pretilt angle in the vicinity of the substrate subjected to the split orientation treatment in the splay type TN deformation region is made larger than the pretilt angle in the vicinity of the substrate in the normal TN deformation region. It can be seen that a stable split orientation can be obtained. Furthermore, it can be seen that stable division alignment can be obtained by positioning the liquid crystal section having a small pretilt angle on the side of the active element where the lateral electric field is weak. Therefore, according to the present invention, stable split alignment can be obtained even when split alignment treatment is performed by a method with a small number of steps in order to manufacture a liquid crystal display element having a wide viewing angle.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の液晶表示素子の構成を表す概念図であ
る。
FIG. 1 is a conceptual diagram illustrating a configuration of a liquid crystal display device of the present invention.

【図2】分割配向の工程を示す断面図で、(a)第一回
目ラビング、(b)フォトレジスト塗布、(c)フォト
レジスト露光・現像、(d)第二回目(逆方向)ラビン
グ、(e)フォトレジスト剥離を示す図である。
FIGS. 2A and 2B are cross-sectional views showing a process of split orientation, in which (a) first rubbing, (b) photoresist coating, (c) photoresist exposure and development, (d) second (reverse) rubbing, (E) is a diagram showing photoresist stripping.

【図3】本発明の実施例における薄膜トランジスタアレ
イを示す平面図である。
FIG. 3 is a plan view showing a thin film transistor array according to the embodiment of the present invention.

【図4】本発明の実施例における分割配向時のマスク位
置を示す模式図である。
FIG. 4 is a schematic diagram showing a mask position at the time of division alignment in an embodiment of the present invention.

【図5】本発明の実施例における液晶配向の模式図を示
す図4のC−C′線に沿った断面図である。
FIG. 5 is a cross-sectional view taken along the line CC ′ of FIG. 4 showing a schematic view of the liquid crystal alignment in the example of the present invention.

【図6】本発明の比較例における液晶配向の模式図を示
す断面図である。
FIG. 6 is a cross-sectional view showing a schematic view of liquid crystal alignment in a comparative example of the present invention.

【図7】本発明の比較例における分割配向時のマスク位
置を示す模式図である。
FIG. 7 is a schematic diagram showing a mask position at the time of division alignment in a comparative example of the present invention.

【図8】本発明の比較例における液晶配向の模式図を示
す断面図である。
FIG. 8 is a cross-sectional view showing a schematic view of liquid crystal alignment in a comparative example of the present invention.

【図9】本発明の実施例における蓄積容量を有する薄膜
トランジスタアレイを示す平面図である。
FIG. 9 is a plan view showing a thin film transistor array having a storage capacitor according to an embodiment of the present invention.

【図10】本発明の実施例における分割配向時のマスク
位置を示す模式図である。
FIG. 10 is a schematic diagram showing mask positions at the time of division alignment in the example of the present invention.

【図11】本発明の実施例における液晶配向の模式図を
示す図10のD−D′線に沿った断面図である。
FIG. 11 is a cross-sectional view taken along the line DD ′ of FIG. 10 showing a schematic view of the liquid crystal alignment in the example of the present invention.

【符号の説明】[Explanation of symbols]

1 分割配向処理された基板 2 対向側のガラス基板 3 能動素子 4 ポリイミド配向膜 5 スプレイ型変形をする領域 6 スプレイ型以外の変形をする領域 7 フォトレジスト 8 蓄積容量部 9、10 配向膜 11 分割境界での遮光部 12 カラーフィルタ 13 画素電極 14 薄膜トランジスタ 15 走査電極線 16 信号電極線 17 第一の基板 18 第二の基板 19、20 透明電極 21、22 ガラス基板 23 ITO膜 1 Substrate subjected to orientation treatment 2 Glass substrate on the opposite side 3 Active element 4 Polyimide orientation film 5 Area subject to splay type deformation 6 Area subject to deformation other than splay type 7 Photoresist 8 Storage capacitor portion 9, 10 Alignment film 11 Division Light-shielding part at boundary 12 Color filter 13 Pixel electrode 14 Thin film transistor 15 Scan electrode line 16 Signal electrode line 17 First substrate 18 Second substrate 19, 20 Transparent electrode 21, 22 Glass substrate 23 ITO film

───────────────────────────────────────────────────── フロントページの続き (72)発明者 金子 節夫 東京都港区芝五丁目7番1号 日本電気株 式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Setsuo Kaneko 5-7-1 Shiba, Minato-ku, Tokyo NEC Corporation

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】1画素を構成する1対の電極のいずれか一
方の電極に2つの部分に分割するため異なった配向処理
を施し、他方の基板には一定の配向処理を施し、分割さ
れた各部で配向状態の異なる液晶区分を有する液晶表示
装置において、分割配向処理を施した基板近傍のプレチ
ルト角が、スプレイ型変形をする液晶区分中で、それ以
外の変形をする液晶区分中での、プレチルト角よりも大
きくなるようにされていることを特徴とする液晶表示装
置。
1. One of a pair of electrodes constituting one pixel is subjected to different alignment treatments to divide into two parts, and the other substrate is subjected to a certain alignment treatment to be divided. In a liquid crystal display device having a liquid crystal section with a different alignment state in each part, the pretilt angle in the vicinity of the substrate subjected to the split alignment process is in the liquid crystal section undergoing splay type deformation, and in the liquid crystal section undergoing other deformation, A liquid crystal display device, characterized in that the liquid crystal display device is designed to be larger than the pretilt angle.
【請求項2】分割配向処理を施した基板上でのプレチル
ト角が小さい液晶区分が画素の能動素子側に存在するこ
とを特徴とする請求項1記載の液晶表示装置。
2. The liquid crystal display device according to claim 1, wherein a liquid crystal section having a small pretilt angle on the substrate subjected to the division alignment treatment is present on the active element side of the pixel.
【請求項3】一方の液晶区分でねじれネマチック配向を
し、もう一方の液晶区分で、スプレイ型のねじれネマチ
ック配向をすることを特徴とする請求項1ないし2記載
の液晶表示装置。
3. A liquid crystal display device according to claim 1, wherein one liquid crystal section has a twisted nematic orientation, and the other liquid crystal section has a splayed twisted nematic orientation.
【請求項4】分割配向処理を施した基板の、分割配向の
境界に遮光膜を設ける事を特徴とする請求項1ないし3
に記載の液晶表示装置。
4. A light-shielding film is provided on a boundary of divided orientations of a substrate subjected to divided orientation treatment.
The liquid crystal display device according to item 1.
JP27883394A 1994-04-19 1994-11-14 Liquid crystal display Expired - Fee Related JP2624197B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP27883394A JP2624197B2 (en) 1994-04-19 1994-11-14 Liquid crystal display
US08/424,123 US5781262A (en) 1994-04-19 1995-04-19 Liquid crystal display cell
KR1019950009489A KR950029830A (en) 1994-04-19 1995-04-19 Liquid crystal display cell
US09/096,607 US6081314A (en) 1994-04-19 1998-06-12 Liquid crystal display cell
US09/542,110 US6323922B1 (en) 1994-04-19 2000-03-31 Liquid crystal display cell

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6-79089 1994-04-19
JP7908994 1994-04-19
JP27883394A JP2624197B2 (en) 1994-04-19 1994-11-14 Liquid crystal display

Publications (2)

Publication Number Publication Date
JPH086028A true JPH086028A (en) 1996-01-12
JP2624197B2 JP2624197B2 (en) 1997-06-25

Family

ID=26420158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27883394A Expired - Fee Related JP2624197B2 (en) 1994-04-19 1994-11-14 Liquid crystal display

Country Status (1)

Country Link
JP (1) JP2624197B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6630971B1 (en) 1999-04-02 2003-10-07 Lg.Philips Lcd Co., Ltd. Multi-domain liquid crystal display device
JP2005326679A (en) * 2004-05-14 2005-11-24 Seiko Epson Corp Electrooptical device, method for manufacturing the same, and electronic equipment
US7251002B2 (en) 2002-12-31 2007-07-31 Lg.Philips Lcd Co., Ltd. Multi-domain liquid crystal display device having particular electric field distorting means
US7283191B2 (en) 2003-11-19 2007-10-16 Seiko Epson Corporation Liquid crystal display device and electronic apparatus wherein liquid crystal molecules having particular pre-tilt angle
CN105388670A (en) * 2015-12-24 2016-03-09 上海天马微电子有限公司 Liquid crystal display panel, manufacturing method thereof and display device including same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62106215U (en) * 1985-12-25 1987-07-07
JPH05224210A (en) * 1992-02-18 1993-09-03 Nec Corp Liquid crystal display device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62106215U (en) * 1985-12-25 1987-07-07
JPH05224210A (en) * 1992-02-18 1993-09-03 Nec Corp Liquid crystal display device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6630971B1 (en) 1999-04-02 2003-10-07 Lg.Philips Lcd Co., Ltd. Multi-domain liquid crystal display device
US7251002B2 (en) 2002-12-31 2007-07-31 Lg.Philips Lcd Co., Ltd. Multi-domain liquid crystal display device having particular electric field distorting means
US7283191B2 (en) 2003-11-19 2007-10-16 Seiko Epson Corporation Liquid crystal display device and electronic apparatus wherein liquid crystal molecules having particular pre-tilt angle
JP2005326679A (en) * 2004-05-14 2005-11-24 Seiko Epson Corp Electrooptical device, method for manufacturing the same, and electronic equipment
JP4599888B2 (en) * 2004-05-14 2010-12-15 セイコーエプソン株式会社 Manufacturing method of electro-optical device
CN105388670A (en) * 2015-12-24 2016-03-09 上海天马微电子有限公司 Liquid crystal display panel, manufacturing method thereof and display device including same

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