JPH085471A - Method and device for measuring stress - Google Patents

Abstract

PURPOSE:To provide a stress measuring device, which can facilitate the visualization of the measuring point and the specification of the measuring position with the Raman spectrometry and which can accurately measure the stress value of a very fine part and the distribution condition. CONSTITUTION:A sample 8 is irradiated with the ultraviolet laser beam 2 from a first ultraviolet laser beam source 1, and the reflected ultraviolet laser beam is detected by an ultraviolet image sensor 9, and the surface condition of the sample 8 is displayed in an image processing device 11. On the other hand, the sample 8 is irradiated with the ultraviolet laser beam 13 from a second ultraviolet laser beam source 12, and the Raman scattering beam is detected by a spectrometer 16 and the detecting unit 17, and the Raman spectrum is read by a computer 10. Stress value is obtained on the basis of the frequency shift value of each scanning point, and the distribution condition is displayed in the image processing device 11. Center of a faceplate of the image processing device 11 and the center of a spot of the ultraviolet laser are made to coincide with each other, and the sample 8 is moved so that the measuring position coincides with the center of the faceplate of the image processing device 11, and the stress of the specified position is measured.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a stress measuring method and a stress measuring device for a minute portion, and is particularly suitable for stress measurement at a location where the measuring position is specified in an extremely minute specimen such as an LSI element. To a simple stress measuring method and a stress measuring device.

[0002]

2. Description of the Related Art Appl. Phys. Lett., Vol.40, No.10 (198)
2), pp895-898, a stress measurement method and a stress measurement device by Raman spectroscopy are discussed.

In this conventional technique, the stress in the sample is measured based on the Raman spectrum. When a sample is irradiated with a strong monochromatic light beam such as an Ar ion laser or a Kr ion laser, the incident light is frequency-shifted due to the molecular vibration of the sample, and Raman scattered light having a frequency different from that of the incident light is generated. The result of measuring the frequency-shifted Raman scattered light intensity is called a Raman spectrum. The sample can be analyzed qualitatively by referring to the frequency at which the Raman spectrum shows a peak, and the sample can be analyzed quantitatively by referring to the Raman scattered light intensity. When stress is applied to the sample, the frequency position where the Raman spectrum shows a peak shifts. By detecting this shift amount, the stress applied to the sample can be quantitatively evaluated.

[0004]

In the conventional stress measuring method and stress measuring apparatus described above, when observing the morphology of the sample and specifying the measurement position, for example, as in an LSI device, a sub-micrometer or nanometer order. In the case of a sample in which the structure changes intricately at the microscopic part, it is difficult to visualize the measurement point and to specify the measurement position because white light in the visible region is used. There was a drawback that the accuracy deteriorated. In this specification, displaying the morphology of the sample at the measurement location on a CRT or the like or allowing it to be photographed and observed is referred to as "visualization of the measurement location", and the position of the measurement location is determined with the required accuracy. What to do is expressed as "specification of the measurement position".

The object of the present invention is to easily visualize the measurement location and to specify the measurement location, and it is possible to measure the stress value or the stress distribution in the micro-micrometer portion of the submicrometer or nanometer order with high accuracy. A stress measuring method and a stress measuring device.

[0006]

In order to achieve the above object, the present invention proposes the following stress measuring method and stress measuring device.

In the first stress measuring method, a visible laser light source, an objective lens for irradiating the sample surface with laser light from the visible laser light source in a spot shape, a spectroscope, and Raman scattered light from the sample surface are guided to a spectroscope. In a stress measurement method for measuring stress in a sample by Raman spectroscopy using a half mirror and a detector that detects the separated Raman scattered light, a laser beam from a visible laser light source is sampled before the Raman spectroscopy is performed. It is a stress measuring method in which the stress value or the stress distribution at the measurement point is measured by Raman spectroscopy by irradiating the sample with light, detecting the reflected light from the sample with an image sensor, visualizing and specifying the measurement point.

In the second stress measuring method, a visible laser light source, an objective lens for irradiating the sample surface with laser light from the visible laser light source in a spot shape, a spectroscope, and Raman scattered light from the sample surface are guided to the spectroscope. In a stress measuring method for measuring stress in a sample by Raman spectroscopy using a half mirror and a detector for detecting dispersed Raman scattered light, a laser beam from a second visible laser light source is provided before the Raman spectroscopy is performed. Is applied to a sample, the reflected light from the sample is detected by an image sensor, the measurement point is visualized and specified, and the stress value or stress distribution at the measurement point is measured by Raman spectroscopy.

In the first and second stress measuring methods, a confocal optical system can be used as an optical system for guiding the reflected light to the image sensor.

In the third stress measuring method, a visible laser light source, an objective lens for irradiating the sample surface with laser light from the visible laser light source in a spot shape, a spectroscope, and Raman scattered light from the sample surface are guided to a spectroscope. In a stress measurement method for measuring stress in a sample by Raman spectroscopy using a half mirror and a detector that detects the separated Raman scattered light, an ultraviolet laser light from an ultraviolet laser light source is emitted before performing Raman spectroscopy. It is a stress measurement method in which a sample is irradiated, the reflected light from the sample is detected by an ultraviolet image sensor, the measurement point is visualized and specified, and the stress value or stress distribution at the measurement point is measured by Raman spectroscopy.

In the third stress measuring method, a confocal optical system can be used as an optical system for guiding the reflected light to the ultraviolet image sensor.

In the third stress measuring method, it is desirable to carry out the stress measurement in a vacuum, for example, 10 μPa-
Perform in a vacuum of 50 kPa.

The fourth stress measuring method is an ultraviolet laser light source, an ultraviolet objective lens for irradiating the sample surface with ultraviolet laser light from the ultraviolet laser light source, a spectroscope, and ultraviolet Raman scattered light from the sample surface. In a stress measurement method that measures the stress in a sample by ultraviolet Raman spectroscopy using an ultraviolet half mirror that guides the sample to the detector and a detector that detects spectrally separated Raman scattered light, a visible laser beam is emitted prior to the execution of ultraviolet Raman spectroscopy. The sample is irradiated with the laser light from the light source, the reflected light from the sample is detected by the image sensor,
This is a stress measurement method in which the measurement value is visualized and specified, and the stress value or stress distribution at the measurement point is measured by ultraviolet Raman spectroscopy.

In the fourth stress measuring method, a confocal optical system can be used as an optical system for guiding the reflected light to the image sensor.

In the fourth stress measuring method, it is desirable to carry out the stress measurement in a vacuum, for example, 10 μPa-
Perform in a vacuum of 50 kPa.

The fifth stress measuring method is an ultraviolet laser light source, an ultraviolet objective lens for irradiating the ultraviolet laser light from the ultraviolet laser light source on the sample surface in a spot shape, a spectroscope, and ultraviolet Raman scattered light from the sample surface. In the stress measurement method for measuring the stress in the sample by the ultraviolet Raman spectroscopy using an ultraviolet half mirror that guides the sample to the detector and a detector that detects the separated ultraviolet Raman scattered light, an ultraviolet laser is used before the execution of the ultraviolet Raman spectroscopy. The sample is irradiated with the ultraviolet laser light from the light source, the reflected light from the sample is detected by the ultraviolet image sensor, the measurement point is visualized and specified, and the stress value or stress distribution at the measurement point is measured by the ultraviolet Raman spectroscopy. This is a stress measuring method to be measured.

The sixth stress measuring method is an ultraviolet laser light source, an ultraviolet objective lens for irradiating the sample surface with the ultraviolet laser light from the ultraviolet laser light source, a spectroscope, and ultraviolet Raman scattered light from the sample surface. In a stress measuring method for measuring stress in a sample by ultraviolet Raman spectroscopy using an ultraviolet half mirror guided to a vessel and a detector for detecting dispersed ultraviolet Raman scattered light, prior to execution of ultraviolet Raman spectroscopy, The sample is irradiated with the ultraviolet laser light from the ultraviolet laser source, the reflected light from the sample is detected by the ultraviolet image sensor, the measurement point is visualized and specified, and the stress value or stress at the measurement point is measured by the ultraviolet Raman spectroscopy. This is a stress measuring method for measuring distribution.

In the fifth and sixth stress measuring methods,
A confocal optical system can be used as an optical system that guides the reflected light to the ultraviolet image sensor.

In the fifth and sixth stress measuring methods,
It is desirable to perform stress measurements in vacuum, eg 1
It is carried out in a vacuum of 0 μPa to 50 kPa.

The first stress measuring apparatus guides a visible laser light source, an objective lens for irradiating the sample surface with laser light from the visible laser light source in a spot shape, a spectroscope, and Raman scattered light from the sample surface to the spectroscope. A stress measuring device comprising a half mirror and a detector for detecting the separated Raman scattered light, in a stress measuring device for measuring stress in a sample by Raman spectroscopy, a visible laser light source, and a laser beam from this visible laser light source at a predetermined scanning frequency. In the main scanning direction and the sub-scanning direction orthogonal thereto, a polarizing means for outputting the polarized light to the sample, an objective lens for irradiating the sample with polarized laser light and condensing reflected light from the sample, The image sensor includes a plurality of light receiving elements arranged regularly in the scanning direction and receives the reflected light condensed by the objective lens and converts it into an electric signal. The measurement point is the stress measuring device provided with means for specifying to visualize.

In the first stress measuring apparatus, the polarizing means specifically includes an acousto-optical AO element for scanning the visible laser light from the visible laser light source on the sample and a galvano mirror.

If the first stress measuring device is provided with the focus detecting means for receiving a part of the light beam incident on the image sensor and detecting the focus information of the sample, the resolution is improved.

The first stress measuring device may include sample driving means for driving the sample at least in a direction orthogonal to the main scanning direction.

The second stress measuring device guides the visible laser light source, the objective lens for irradiating the laser light from the visible laser light source to the sample surface in a spot shape, the spectroscope, and the Raman scattered light from the sample surface to the spectroscope. A stress measuring device comprising a half mirror and a detector for detecting spectrally separated Raman scattered light, in a stress measuring device for measuring stress in a sample by Raman spectroscopy, a second visible laser light source, and a laser light from the second visible laser light source. And a polarizing means for polarizing the laser beam at a predetermined scanning frequency in the main scanning direction and the sub-scanning direction orthogonal thereto and outputting the polarized laser light to the sample, and an objective lens for condensing the reflected light from the sample. And an image sensor that includes at least a plurality of light receiving elements regularly arranged in the main scanning direction, receives the reflected light condensed by the objective lens, and converts the reflected light into an electric signal. Rannahli, the measurement point is a stress measuring device provided with means for specifying visualized.

In the second stress measuring device, the polarization means specifically includes an AO element for scanning the visible laser light from the second visible laser light source on the sample and a galvano mirror.

If the second stress measuring device is provided with the focus detecting means for receiving a part of the light beam incident on the image sensor and detecting the focus information of the sample, the resolution is improved.

The second stress measuring device may include sample driving means for driving the sample at least in the direction orthogonal to the main scanning direction.

The third stress measuring device guides a visible laser light source, an objective lens for irradiating the sample surface with laser light from the visible laser light source in a spot shape, a spectroscope, and Raman scattered light from the sample surface to the spectroscope. In a stress measuring device comprising a half mirror and a detector for detecting the separated Raman scattered light, in a stress measuring device for measuring the stress in a sample by Raman spectroscopy, an ultraviolet laser light source, and an ultraviolet laser light from this ultraviolet laser light source at a predetermined scanning frequency In the main scanning direction and in the sub-scanning direction orthogonal thereto, a polarizing means for outputting toward the sample, an objective lens for irradiating the sample with polarized ultraviolet laser light and condensing the reflected light from the sample, An ultraviolet image sensor including a plurality of light receiving elements arranged regularly in the main scanning direction and receiving reflected light condensed by an objective lens and converting it into an electric signal. Made, the measurement point is a stress measuring device provided with means for specifying visualized.

In the third stress measuring apparatus, the polarization means includes an ultraviolet AO element for scanning the ultraviolet laser light from the ultraviolet laser light source on the sample and an ultraviolet galvanometer mirror.

If the third stress measuring device is provided with the focus detecting means for receiving a part of the light beam incident on the ultraviolet image sensor and detecting the focus information of the sample, the resolution is improved.

The third stress measuring device may include sample driving means for driving the sample at least in the direction orthogonal to the main scanning direction.

The fourth stress measuring apparatus is an ultraviolet laser light source, an ultraviolet objective lens for irradiating the sample surface with the ultraviolet laser light from the ultraviolet laser light source, a spectroscope, and ultraviolet Raman scattered light from the sample surface. In a stress measuring device that includes a half mirror that guides the detector and a detector that detects dispersed ultraviolet Raman scattered light, in a stress measuring device that measures stress in a sample by ultraviolet Raman spectroscopy, a visible laser light source and a laser from the visible laser light source. Polarizing means for polarizing light in a main scanning direction and a sub-scanning direction orthogonal thereto at a predetermined scanning frequency and outputting the polarized light to a sample, and an objective for irradiating the sample with polarized laser light and collecting reflected light from the sample. An image that includes a lens and a plurality of light receiving elements that are regularly arranged in at least the main scanning direction and receives the reflected light condensed by the objective lens and converts it into an electric signal. It consists of a Jisensa, the measurement point is a stress measuring device provided with means for specifying visualized.

In the fourth stress measuring device, the polarization means specifically includes an AO element for scanning the visible laser light from the visible laser light source on the sample and a galvanometer mirror.

If the fourth stress measuring device is provided with the focus detecting means for receiving a part of the light beam incident on the image sensor and detecting the focus information of the sample, the resolution is improved.

The fourth stress measuring device may include sample driving means for driving the sample at least in the direction orthogonal to the main scanning direction.

The fifth stress measuring device is an ultraviolet laser light source, an ultraviolet objective lens for irradiating the sample surface with ultraviolet laser light from the ultraviolet laser light source, a spectroscope, and ultraviolet Raman scattered light from the sample surface. Equipped with an ultraviolet half mirror and a detector to detect the dispersed ultraviolet Raman scattered light, in the stress measuring device to measure the stress in the sample by ultraviolet Raman spectroscopy, an ultraviolet laser light source, and from this ultraviolet laser light source Polarizing means for polarizing the laser light at a predetermined scanning frequency in the main scanning direction and the sub-scanning direction orthogonal thereto and outputting it toward the sample, and irradiating the sample with polarized ultraviolet laser light to collect the reflected light from the sample. It includes an ultraviolet objective lens and at least a plurality of light receiving elements regularly arranged in the main scanning direction, receives reflected light condensed by the ultraviolet objective lens, and receives an electric signal. Consists of a UV image sensor for converting into the measurement point is a stress measuring device provided with means for specifying visualized.

In the fifth stress measuring apparatus, the polarization means includes an ultraviolet AO element for scanning the ultraviolet laser light from the ultraviolet laser light source on the sample and an ultraviolet galvano mirror.

If the fifth stress measuring device is provided with the focus detecting means for receiving a part of the light beam incident on the ultraviolet image sensor and detecting the focus information of the sample, the resolution is improved.

The fifth stress measuring device can be provided with a sample driving means for driving the sample at least in a direction orthogonal to the main scanning direction.

The sixth stress measuring apparatus is an ultraviolet laser light source, an ultraviolet objective lens for irradiating the sample surface with ultraviolet laser light from this ultraviolet laser light source, a spectroscope, and ultraviolet Raman scattered light from the sample surface. In a stress measuring device equipped with an ultraviolet half mirror that guides the sample to a detector and a detector that detects spectrally separated Raman scattered light, the second ultraviolet laser light source and the second ultraviolet laser are used in a stress measuring device that measures stress in a sample by ultraviolet Raman spectroscopy. A polarizing means for polarizing the ultraviolet laser light from the laser light source in the main scanning direction and the sub-scanning direction orthogonal to this at a predetermined scanning frequency and outputting it toward the sample, and irradiating the sample with the polarized ultraviolet laser light An ultraviolet objective lens that collects reflected light and at least a plurality of light-receiving elements that are regularly arranged in the main scanning direction are included. It consists of a UV image sensor for converting the optical and electrical signals, a measurement point is the stress measuring device provided with means for specifying visualized.

In the sixth stress measuring device, the polarization means specifically includes an ultraviolet AO element for scanning the ultraviolet laser light from the second ultraviolet laser light source on the sample and an ultraviolet galvano mirror.

If the sixth stress measuring device is provided with a focus detecting means for receiving a part of the light beam incident on the ultraviolet image sensor and detecting the focus information of the sample, the resolution is improved.

The sixth stress measuring device may include sample driving means for driving the sample at least in the direction orthogonal to the main scanning direction.

It is desirable that any stress measuring device using an ultraviolet laser is provided with a means for making at least the optical path of the ultraviolet laser light a vacuum. For example, a means for making at least the optical path of the ultraviolet laser light a vacuum of 10 μPa to 50 kPa. Prepare

[0045]

[Function] Since the laser light or the ultraviolet laser light is coherent light as compared with white light, that is, the light having the same wavelength and the same phase, the contrast of the sample surface becomes clear, and compared with the case of using white light. Visualization of measurement points and specification of measurement positions can be performed with high accuracy. In particular, when an ultraviolet laser is used, the wavelength is shorter than in the case of conventional laser light in the visible region, so the laser spot diameter becomes smaller and the sample morphology can be observed more clearly.

Therefore, according to the stress measuring method of the present invention, it is possible to perform the visualization of the measurement points of the submicrometer or nanometer-order micro-fine portion and the specification of the measurement position with high accuracy, and the stress value of the micro-fine portion and It is possible to measure the stress distribution with high accuracy.

Further, the stress measuring device of the present invention comprises a laser light source or an ultraviolet laser light source for generating a laser beam or an ultraviolet laser beam, and an acousto-optical AO element or an ultraviolet AO element for scanning the sample with the laser beam or the ultraviolet laser beam. Element and galvanometer mirror or ultraviolet galvanometer mirror, objective lens or ultraviolet objective lens that collects laser light or ultraviolet laser light and reflected light, and image sensor or ultraviolet image that receives reflected light from the sample and outputs an electrical signal It includes a sensor. In this stress measuring device, since the laser light or the ultraviolet laser light, which is much more coherent than white light, is used, the contrast of the sample surface becomes clear, and the stress value of the microscopic portion on the order of submicrometer or nanometer and The stress distribution can be detected with high accuracy and the stress can be measured with high accuracy.

Further, when the stress is measured in vacuum, the attenuation of the intensity of the ultraviolet laser light can be suppressed, and the stress can be measured with higher accuracy.

The stress measuring method or the stress measuring apparatus of the present invention can be applied to a semiconductor manufacturing method or a semiconductor manufacturing apparatus if it is used for measuring stress in a semiconductor, and is useful for improving a semiconductor manufacturing process and improving a yield of manufactured semiconductors. .

[0050]

Embodiments of the stress measuring device according to the present invention will be described below with reference to the drawings. FIG. 1 is a system diagram showing a basic configuration of an embodiment of a stress measuring device using ultraviolet Raman spectroscopy according to the present invention. In FIG. 1, the ultraviolet laser light 2 output from the first ultraviolet laser light source 1 is an ultraviolet acous
A sample 8 is irradiated through a to-optical AO element 3, an ultraviolet mirror 4, an ultraviolet galvano mirror 5, an ultraviolet half mirror or a beam splitter 6, and an ultraviolet objective lens 7. The output of the first ultraviolet laser light source 1 is, for example, several mW to several W, and the wavelength of the ultraviolet laser light 2 is, for example, 0.1 to 0.4 μm.
Is. The ultraviolet laser light 2 reflected by the sample 8 passes through the ultraviolet objective lens 7, is detected by the ultraviolet image sensor 9, and
It is converted into an electric signal. The electric signal is amplified by an amplifier (not shown), read into the computer 10 and processed by the image processing device 11 to display the surface morphology of the sample. The ultraviolet image sensor 9 may be a linear image sensor or a two-dimensional image sensor.

On the other hand, the ultraviolet laser light 13 emitted from the second ultraviolet laser light source 12 passes through the ultraviolet mirror 14, is focused by the ultraviolet objective lens 7, and is irradiated onto the sample 8. The minimum value of the spot diameter of the ultraviolet laser on the sample 8, that is, the irradiation diameter is about the same as the wavelength of the ultraviolet laser used. By changing the optical system such as a lens, it is possible to change the spot diameter to any size larger than the minimum value.

The present invention is a stress measuring method and a stress measuring apparatus suitable for measuring semiconductor materials such as silicon, germanium, gallium-arsenic compounds, and various materials such as carbon, graphite, diamond, and ceramics. The case where silicon is used as the sample will be described. The Raman scattered light generated due to the molecular vibration of the silicon sample 8 passes through the ultraviolet objective lens 7, is guided to the spectroscope 16 by the ultraviolet half mirror 15, and is detected by the detector 17. As the detector 17, a photomultiplier tube, a multi-channel detector or a charge-coupled device CCD
Use a detector, etc. The Raman spectrum detected by the detector 17 is read by the computer 10. Sample 8 is
It is placed on the fine movement stage 18. Fine movement stage 18
Although not shown here, is equipped with a moving mechanism and can move in three axial directions of two horizontal axes and one vertical axis.
For example, when the stage 18 is moved in steps of 1 nm to 1 mm, the ultraviolet laser light 13 can be scanned on the sample 8.
In synchronization with the scanning of the ultraviolet laser light 13, the computer 10 is caused to read the Raman spectrum at each scanning position and the position information from the position sensor provided on the fine movement stage 18. The computer 10 obtains the stress value from the frequency shift value at each scanning point and displays the stress distribution on the image processing device 11.

A cross-shaped mark, for example, is arranged at the center of the screen of the image processing device 11 so that this mark coincides with the spot center of the first ultraviolet laser beam 2 and the spot center of the second ultraviolet laser beam 13. It is adjusted. Sample 8 is
It is placed on the fine movement stage 18, and this stage 18
Since the position sensor is provided in, the sample 8 can be moved to an arbitrary position based on the position information. Therefore,
When the sample 8 is moved so that the measurement point of the sample 8 coincides with the mark at the center of the screen of the image processing apparatus 11, the stress at the specified measurement position can be measured.

In the present embodiment, the center of the screen of the image processing device 11 is set so as to coincide with the spot center of the first ultraviolet laser light 2 and the spot center of the second ultraviolet laser light 13, but the image processing device 11 Select a location different from the center of the screen, and provide a mark at that location, and mark the spot at the spot center of the first ultraviolet laser beam 2 and the second ultraviolet laser beam 1.
You may set so that the spot centers of 3 may correspond.

Although not shown here, the ultraviolet mirror 14 and the ultraviolet half mirror 15 of this embodiment are provided with a moving mechanism so that they can be moved when the first ultraviolet laser beam is irradiated.

The ultraviolet laser used in this embodiment is any one of Ar ion laser, N ₂ laser, He-Cd laser and excimer laser. As an excimer laser, H ₂
Laser, Ar ₂ laser, Kr ₂ laser, Xe ₂ laser, A
rCl laser, ArF laser, KrCl laser, KrF
There are lasers, XeF lasers, XeBr lasers, XeCl lasers, XeF lasers and the like.

As the ultraviolet objective lens 7, it is desirable to use an alkali halide lens, particularly a LiF lens, a MgF ₂ lens, or a fluorite (CaF ₂ ) lens. Further, the ultraviolet objective lens 7 may be formed of a synthetic quartz lens, a fused silica lens made of natural quartz, a sapphire glass (Al ₂ O ₃ ) lens, an ultraviolet transmission glass lens, or the like.

FIG. 2 is a system diagram showing the configuration of another embodiment of the stress measuring apparatus according to the present invention using the ultraviolet Raman spectroscopy. The embodiment of FIG. 2 is similar to the embodiment of FIG.
In this example, a pinhole 19 is provided between the ultraviolet image sensor 9 and the ultraviolet image sensor 9. Although not shown here, the pinhole 1
A focus detection unit is provided to detect a focus information of the sample by receiving a part of the light beam incident on the ultraviolet image sensor 9 so that the focus position 9 is obtained. Therefore, in the present embodiment, the ultraviolet laser light 2 is irradiated so that the surface of the sample 8 is focused, and the reflected light is focused on the ultraviolet image sensor 9 so that the pinhole 19 is at the focal position. , High resolution is realized. Moreover, since unnecessary scattered light can be largely removed by the pinhole 19, a high-contrast image can be obtained.

It should be noted that, in the following embodiments provided with pinholes, the description will not be repeated, but any of them can be provided with the same focus detection means as in this embodiment.

FIG. 3 is a system diagram showing the configuration of another embodiment of the stress measuring apparatus according to the present invention using the ultraviolet Raman spectroscopy. The embodiment of FIG. 3 is the ultraviolet AO in the embodiment of FIG.
Element 3, UV mirror 4, UV galvano mirror 5, UV half mirror or beam splitter 6, UV objective lens 7, sample 8, UV image sensor 9, UV mirror 14,
Ultraviolet half mirror 15, fine movement stage 18 in vacuum chamber 20
It is an example provided inside. These components of this example are
Not only in high vacuum (10 μPa-0.1 Pa) or medium vacuum (0.1-100 Pa), but also in low vacuum (100
(Pa or more) or may be installed in the atmosphere. However, since the intensity of ultraviolet laser light is greatly attenuated in air, the attenuation can be reduced by irradiating it in an atmosphere having a higher degree of vacuum.

FIG. 4 is a system diagram showing the construction of still another embodiment of the stress measuring apparatus according to the present invention using the ultraviolet Raman spectroscopy. In the embodiment of FIG. 4, the ultraviolet AO element 3, the ultraviolet mirror 4, the ultraviolet galvano mirror 5, and the like in the embodiment of FIG.
This is an example in which an ultraviolet half mirror or beam splitter 6, an ultraviolet objective lens 7, a sample 8, an ultraviolet image sensor 9, an ultraviolet mirror 14, an ultraviolet half mirror 15, a fine movement stage 18, and a pinhole 19 are provided in a vacuum chamber 20. These components of this example were tested in high vacuum (10 μPa-0.1).
Pa) or medium vacuum (0.1 to 100 Pa), as well as low vacuum (100 Pa or more) or air. However, since the intensity of ultraviolet laser light is greatly attenuated in air, the attenuation can be reduced by irradiating it in an atmosphere having a higher degree of vacuum.

FIG. 5 is a system diagram showing the configuration of an embodiment of a semiconductor manufacturing apparatus equipped with the stress measuring apparatus of the embodiment of FIG. The semiconductor manufacturing apparatus in this case is specifically a vacuum vapor deposition apparatus. In the vacuum vapor deposition apparatus of this embodiment, a sample 8 such as a silicon substrate fixed to the fine movement stage 18 is arranged in a bell jar 25 forming a vacuum chamber, and a vapor deposition substance is placed facing the sample 8. An evaporation source 26 is arranged. The sample 8 is heated to a predetermined temperature by the heater 27, and the bias voltage from the negative DC bias voltage source 29 is applied. Also, inside the bell jar 25,
Here, the vacuum degree is maintained at about 1 to 10 kPa by a vacuum pump (not shown). For example, the evaporation source 26 is heated by a well-known electron gun heating method to evaporate the vapor deposition material, and the sample 8
The stress at the UV laser irradiation point is measured in-situ with the stress measuring device while vapor deposition on the surface. The structure and operation of the stress measuring device are as described above for the embodiment of FIG. As the ultraviolet window 24 when the ultraviolet laser light 2 or 13 enters the bell jar 25 or when the reflected light or the Raman scattered light is emitted from the bell jar 25, an alkali halide window,
Particularly, it is desirable to use a LiF window, a MgF ₂ window, or a fluorite (CaF ₂ ) window. The ultraviolet window 24 is a synthetic quartz window,
Fused quartz window made from natural quartz, sapphire glass (A
L ₂ O ₃ ) window, ultraviolet transparent glass window, etc. may be used.

FIG. 6 is a system diagram showing the construction of an embodiment of a stress measuring device having one laser light source of the embodiment of FIG. That is, this is an example in which the first ultraviolet laser light source 1 and the second ultraviolet laser light source 12 in the embodiment of FIG. In this way, by using only one ultraviolet laser light source, the stress measuring device can be downsized.

FIG. 7 is a system diagram showing the construction of an embodiment of a stress measuring device having one laser light source of the embodiment of FIG. In this embodiment, it can be considered that the pinhole 19 is provided between the sample 8 and the ultraviolet image sensor 9 in the embodiment shown in FIG. Since the ultraviolet laser beam 2 is irradiated so that the surface of the sample 8 is focused and the reflected light is focused on the ultraviolet image sensor 9 so that the pinhole 19 is at the focal position, high resolution is realized. Moreover, since unnecessary scattered light can be largely removed by the pinhole 19, a high-contrast image can be obtained.

FIG. 8 is a system diagram showing the construction of an embodiment of a stress measuring device having one laser light source of the embodiment of FIG. That is, this is an example in which the first ultraviolet laser light source 1 and the second ultraviolet laser light source 12 in the embodiment of FIG. In this way, by using only one ultraviolet laser light source, the stress measuring device can be downsized.

FIG. 9 is a system diagram showing the construction of an embodiment of a stress measuring apparatus having one laser light source of the embodiment of FIG. In the present embodiment, it can be considered that the pinhole 19 is provided between the sample 8 and the ultraviolet image sensor 9 in the embodiment shown in FIG. Since the ultraviolet laser beam 2 is irradiated so that the surface of the sample 8 is focused and the reflected light is focused on the ultraviolet image sensor 9 so that the pinhole 19 is at the focal position, high resolution is realized. Moreover, since unnecessary scattered light can be largely removed by the pinhole 19, a high-contrast image can be obtained.

FIG. 10 is a system diagram showing the basic construction of an embodiment of the stress measuring apparatus according to the present invention using the ordinary Raman spectroscopy, that is, Raman spectroscopy in the visible light region. In FIG. 10, the laser light 31 output from the first laser light source 30 passes through the AO element 32, the mirror 33, the galvano mirror 34, the half mirror or beam splitter 35, and the objective lens 36, and is irradiated onto the sample 8. The output of the first laser light source 30 is, for example, several mW to several W, and the wavelength of the laser light 31 is, for example, 0.4 to 0.65 μm. The laser light 31 reflected by the sample 8 passes through the objective lens 36, is detected by the image sensor 37, and is converted into an electric signal. The electric signal is amplified by an amplifier (not shown), read into the computer 10 and processed by the image processing device 11 to display the surface morphology of the sample. The image sensor 37 may be a linear image sensor or a two-dimensional image sensor.

On the other hand, the laser light 39 emitted from the second laser light source 38 passes through the mirror 40, is focused by the objective lens 36, and is irradiated onto the sample 8. The minimum value of the spot diameter of the laser on the sample 8, that is, the irradiation diameter is about the same as the wavelength of the laser used. By changing the optical system such as a lens, it is possible to change the spot diameter to any size larger than the minimum value.

The present invention is a stress measuring method and a stress measuring apparatus suitable for measuring semiconductor materials such as silicon, germanium, gallium / arsenic compounds, and various materials such as carbon, graphite, diamond, and ceramics. The case where silicon is used as the sample will be described. The Raman scattered light generated due to the molecular vibration of the silicon sample 8 passes through the objective lens 36 and passes through the half mirror 41.
Is guided to the spectroscope 16 and detected by the detector 17.
As the detector 17, a photomultiplier tube, a multi-channel detector, a CCD detector, or the like is used. The Raman spectrum detected by the detector 17 is read by the computer 10. The sample 8 is placed on the fine movement stage 18. The fine movement stage 18 is not shown here,
Equipped with a moving mechanism, it can move in three axial directions: two horizontal axes and one vertical axis. For example, when the stage 18 is moved in steps of 1 nm to 1 mm, the laser light 39 can be scanned on the sample 8. In synchronization with the scanning of the laser beam 39, the computer 10 is caused to read the Raman spectrum at each scanning position and the position information from the position sensor provided on the fine movement stage 18. The computer 10 obtains the stress value from the frequency shift value at each scanning point and displays the stress distribution on the image processing device 11.

A cross-shaped mark, for example, is arranged at the center of the screen of the image processing device 11, and the mark is adjusted so that it coincides with the spot center of the first laser beam 31 and the spot center of the second laser beam 39. There is. The sample 8 is placed on the fine movement stage 18, and the stage 18 is provided with a position sensor. Therefore, the sample 8 can be moved to an arbitrary position based on the position information. Therefore, sample 8
When the sample 8 is moved so that the measurement point of (1) coincides with the mark at the center of the screen of the image processing apparatus 11, the stress at the specified measurement position can be measured.

In the present embodiment, the screen center of the image processing device 11 is set so as to coincide with the spot center of the first laser beam 31 and the spot center of the second laser beam 39. A position different from the center may be selected, a mark may be provided at the position, and the spot center of the first laser light 31 and the spot center of the second laser light 39 may be set to coincide with the mark.

Although not shown here, the mirror 40 and the half mirror 41 of this embodiment are provided with a moving mechanism so that they can be moved when the first laser beam is irradiated.

FIG. 11 is a system diagram showing the configuration of another embodiment of the stress measuring apparatus according to the present invention which normally uses Raman spectroscopy. In the present embodiment, it can be considered that the pinhole 19 is provided between the sample 8 and the ultraviolet image sensor 9 in the embodiment shown in FIG. Since the laser beam 31 is irradiated so that the surface of the sample 8 is focused and the reflected light is focused on the image sensor 37 so that the pinhole 19 is at the focal position, high resolution is realized. Moreover, since unnecessary scattered light can be largely removed by the pinhole 19, a high-contrast image can be obtained.

FIG. 12 is a system diagram showing the construction of another embodiment of the stress measuring apparatus according to the present invention which normally uses Raman spectroscopy. This embodiment is the first embodiment in the embodiment shown in FIG.
It is also considered that the laser light source 30 and the second laser light source 38 are made common and one ultraviolet laser light source is used. In this way, by using only one ultraviolet laser light source, the stress measuring device can be downsized.

FIG. 13 is a system diagram showing the construction of still another embodiment of the stress measuring apparatus according to the present invention which normally uses Raman spectroscopy. In this embodiment, the pinhole 1 is provided between the sample 8 and the image sensor 37 in the embodiment shown in FIG.
It is considered that 9 is provided. Since the laser beam 31 is irradiated so that the surface of the sample 8 is focused and the reflected light is focused on the image sensor 37 so that the pinhole 19 is at the focal position, high resolution is realized. Also, pinhole 1
Since unnecessary scattered light can be largely removed by 9, a high-contrast image can be obtained.

FIG. 14 is a flow chart showing the measuring procedure of an embodiment of the stress measuring method according to the present invention using Raman spectroscopy. FIG. 15 is a flow chart showing the detailed procedure of observing the sample morphology in step 1 in the example of FIG. This procedure is basically the same for both ultraviolet Raman spectroscopy and ordinary Raman spectroscopy, but here, the embodiment of FIG. 1 relating to ultraviolet Raman spectroscopy will be described with reference to FIGS. 14 and 15. The above-mentioned "visualization of the measurement location" corresponds to the procedure of step 1, and the "specification of the measurement position" corresponds to the procedure of step 2.

In step 1, first, the ultraviolet mirror 14 is used.
And the ultraviolet half mirror 15 are moved outside the optical path from the ultraviolet objective lens 7 to the ultraviolet image sensor 9. Therefore, as shown in the procedure in FIG. 15, the sample 8 is placed on the sample table fixed to the fine movement stage 18. In this state, the sample 8 is irradiated with the laser light 2 from the first ultraviolet laser light source 1 through the ultraviolet AO element 3, the ultraviolet mirror 4, the ultraviolet galvano mirror 5, the ultraviolet half mirror 6, and the ultraviolet objective lens 7.
The ultraviolet objective lens 7 forms an image of the reflected light from the sample 8 on the ultraviolet image sensor 9. The electric signal from the ultraviolet image sensor 9 is taken into the computer 10, and the form of the sample 8 is displayed on the CRT of the image processing apparatus 11, for example. Then, the operator observes the morphology of the sample 8. Process 2
In step 1, the fine movement stage 18 is driven to select a measurement point from the form of the sample 8 and the image processing apparatus 11
The measurement position is specified by matching with the cross-shaped mark on the CRT. In step 3, the ultraviolet mirror 14 and the ultraviolet half mirror 15, which had been moved out of the optical path from the ultraviolet objective lens 7 to the ultraviolet image sensor 9 at the time of morphological observation, are returned to the optical path, and the ultraviolet mirror 14 and the ultraviolet half mirror 1 are returned.
5. Through the objective lens 7, the laser beam 13 from the second ultraviolet laser light source 12 is applied to the specified measurement position.
In step 4, the ultraviolet Raman scattered light from the sample 8 is introduced into the spectroscope 16 via the ultraviolet objective lens 7 and the ultraviolet half mirror 15. In step 5, the spectroscope 16
Each component of the Raman spectrum separated by is detected. In step 6, the computer 10 calculates the stress value and / or the stress distribution in the sample 8 based on the peak value of the Raman spectrum and the scattered light intensity, and displays it on the CRT of the image processing apparatus 11.

In these steps of the stress measuring method of the present invention, instead of the conventional white light, the sample is irradiated with laser light or ultraviolet laser light, the reflected light is detected, and the measurement point is visualized and specified. Therefore, the stress value in the sub-micrometer or nanometer order region can be accurately detected, and it becomes possible to measure the stress or stress distribution in the extremely small portion, which was difficult in the past.

The above-mentioned respective embodiments using two laser light sources are examples in which the ultraviolet laser light is also used for Raman spectroscopy when the ultraviolet laser light is used for visualization of the measurement location and specification of the measurement position. When normal laser light was used for visualization of measurement points and specification of measurement positions, it was an example of using normal laser light for Raman spectroscopy as well, but ultraviolet laser light was used for visualization of measurement points and specification of measurement positions. When used, the present invention is established even if a normal laser beam is used for Raman spectroscopy, and conversely, when a normal laser beam is used for visualization of a measurement point and specification of a measurement position, Raman spectroscopy is performed with an ultraviolet ray. It will be apparent from the above description that the present invention can be established by using laser light. Therefore, in order to avoid complexity, detailed description of the configuration and operation of such a modification is omitted here.

[0080]

According to the stress measuring method of the present invention, instead of white light, the sample is irradiated with laser light or ultraviolet laser light, the reflected light is detected, and the measurement location is visualized and specified. Therefore, it is possible to accurately measure the stress value or the stress distribution in the submicrometer or nanometer-order ultrafine portion, which has been difficult in the past.

According to the stress measuring device of the present invention, a laser light source or an ultraviolet laser light source for generating a laser beam or an ultraviolet laser beam, and an AO element or an ultraviolet AO element for scanning the sample with the laser beam or the ultraviolet laser beam. And a galvano mirror or an ultraviolet galvano mirror, an objective lens or an ultraviolet objective lens that collects laser light or ultraviolet laser light and reflected light from a sample, and an image sensor or an ultraviolet image that receives the reflected light and outputs an electric signal Since the sensor is provided, it is possible to measure the stress value or the stress distribution of the micro-part in the sub-micrometer or nanometer order with high accuracy.

Further, when the stress is measured in vacuum, the attenuation of the intensity of the ultraviolet laser light can be suppressed, and the stress can be measured with higher accuracy.

[Brief description of drawings]

FIG. 1 is a system diagram showing a basic configuration of an embodiment of a stress measuring apparatus using ultraviolet Raman spectroscopy according to the present invention.

FIG. 2 is a system diagram showing the configuration of another embodiment of the stress measuring device according to the present invention using ultraviolet Raman spectroscopy.

FIG. 3 is a system diagram showing the configuration of another embodiment of the stress measuring device according to the present invention using ultraviolet Raman spectroscopy.

FIG. 4 is a system diagram showing the configuration of still another embodiment of the stress measuring device according to the present invention using ultraviolet Raman spectroscopy.

5 is a system diagram showing a configuration of an embodiment of a semiconductor manufacturing apparatus equipped with the stress measuring apparatus of the embodiment of FIG.

FIG. 6 is a system diagram showing a configuration of an embodiment of a stress measuring device having one laser light source of the embodiment of FIG.

FIG. 7 is a system diagram showing a configuration of an embodiment of a stress measuring device having one laser light source of the embodiment of FIG.

FIG. 8 is a system diagram showing a configuration of an embodiment of a stress measuring device having one laser light source of the embodiment of FIG.

FIG. 9 is a system diagram showing a configuration of an embodiment of a stress measuring device having one laser light source of the embodiment of FIG.

FIG. 10 is a system diagram showing a basic configuration of an embodiment of a stress measuring device according to the present invention using normal Raman spectroscopy, that is, Raman spectroscopy in the visible light region.

FIG. 11 is a system diagram showing the configuration of another embodiment of the stress measuring apparatus according to the present invention using normal Raman spectroscopy.

FIG. 12 is a system diagram showing the configuration of another embodiment of the stress measuring device according to the present invention using normal Raman spectroscopy.

FIG. 13 is a system diagram showing the configuration of still another embodiment of the stress measuring apparatus according to the present invention using the normal Raman spectroscopy.

FIG. 14 is a flowchart showing a measurement procedure of an example of a stress measuring method according to the present invention using Raman spectroscopy.

15 is a flowchart showing a detailed procedure of visualization (observation of sample morphology) of a measurement site in step 1 in the example of FIG.

[Explanation of symbols]

 1 UV Laser Light Source 2 UV Laser Light 3 UV AO Element 4 UV Mirror 5 UV Galvano Mirror 6 UV Half Mirror or Beam Splitter 7 UV Objective Lens 8 Sample 9 UV Image Sensor 10 Computer 11 Image Processing Device 12 UV Laser Light Source 13 UV Laser Light 14 ultraviolet mirror 15 ultraviolet half mirror 16 spectroscope 17 detector 18 fine movement stage 19 pinhole 20 vacuum chamber 21 ultraviolet window 22 ultraviolet window 23 ultraviolet window 24 ultraviolet window 25 bell jar 26 evaporation source 27 heater 28 heater power supply 29 bias voltage source 30 laser Light source 31 Laser light 32 AO element 33 Mirror 34 Galvano mirror 35 Half mirror or beam splitter 36 Objective lens 37 Image sensor 38 Laser light source 39 Laser light 40 Mirror 41 Half mirror

Claims (52)

[Claims] 1. A visible laser light source, an objective lens for irradiating the sample surface with laser light from the visible laser light source in a spot shape, a spectroscope, and a half mirror and a spectroscope for guiding Raman scattered light from the sample surface to the spectroscope. In the stress measurement method of measuring the stress in the sample by Raman spectroscopy using a detector that detects the Raman scattered light, prior to performing the Raman spectroscopy, the laser light from the visible laser light source to the sample And the reflected light from the sample is detected by an image sensor to visualize and specify the measurement point, and the stress value or stress distribution at the measurement point is measured by the Raman spectroscopy. Stress measurement method. 2. The stress measuring method according to claim 1, wherein a confocal optical system is used as an optical system that guides the reflected light to the image sensor. 3. A visible laser light source, an objective lens for irradiating the sample surface with laser light from the visible laser light source in a spot shape, a spectroscope, and a half mirror and a spectroscope for guiding Raman scattered light from the sample surface to the spectroscope. In the stress measuring method for measuring the stress in the sample by Raman spectroscopy using a detector for detecting the Raman scattered light, the laser light from the second visible laser light source is aforesaid prior to the execution of the Raman spectroscopy. Irradiating the sample, the reflected light from the sample is detected by an image sensor, the visualization and specification of the measurement location is performed, and the stress value or stress distribution at the measurement location is measured by the Raman spectroscopy. Stress measurement method. 4. The stress measuring method according to claim 3, wherein a confocal optical system is used as an optical system for guiding the reflected light to the image sensor. 5. A visible laser light source, an objective lens for irradiating the sample surface with laser light from the visible laser light source in a spot shape, a spectroscope, and a half mirror and a spectroscope for guiding Raman scattered light from the sample surface to the spectroscope. In the stress measurement method for measuring the stress in the sample by Raman spectroscopy using a detector for detecting the Raman scattered light, prior to the execution of the Raman spectroscopy, the ultraviolet laser light from an ultraviolet laser light source the sample The reflected light from the sample is detected by an ultraviolet image sensor, visualization and specification of the measurement point is performed, and the stress value or stress distribution at the measurement point is measured by the Raman spectroscopy. Stress measurement method. 6. The stress measuring method according to claim 5, wherein a confocal optical system is used as an optical system that guides the reflected light to the ultraviolet image sensor. 7. The stress measuring method according to claim 5, wherein the stress measuring is performed in a vacuum. 8. The stress measurement method according to claim 5, wherein the stress measurement is performed in a vacuum of 10 μPa to 50 kPa. 9. An ultraviolet laser light source, an ultraviolet objective lens for irradiating the sample surface with the ultraviolet laser light from the ultraviolet laser light source, a spectroscope, and an ultraviolet ray for guiding the ultraviolet Raman scattered light from the sample surface to the spectroscope. In a stress measurement method for measuring the stress in the sample by ultraviolet Raman spectroscopy using a half mirror and a detector for detecting the dispersed ultraviolet Raman scattered light, prior to the execution of the ultraviolet Raman spectroscopy, from the visible laser light source The sample is irradiated with the laser beam of, the reflected light from the sample is detected by an image sensor, the visualization and the specification of the measurement location are performed, and the stress value or the stress distribution at the measurement location is measured by the ultraviolet Raman spectroscopy. A method for measuring stress, which comprises measuring. 10. The stress measuring method according to claim 9, wherein a confocal optical system is used as an optical system for guiding the reflected light to the image sensor. 11. The stress measuring method according to claim 9 or 10, wherein the stress measuring is performed in a vacuum. 12. The stress measuring method according to claim 9 or 10, wherein the stress measuring is performed in a vacuum of 10 μPa to 50 kPa. 13. An ultraviolet laser light source, an ultraviolet objective lens for irradiating the sample surface with the ultraviolet laser light from the ultraviolet laser light source, a spectroscope, and an ultraviolet ray for guiding the ultraviolet Raman scattered light from the sample surface to the spectroscope. In the stress measurement method for measuring the stress in the sample by ultraviolet Raman spectroscopy using a half mirror and a detector for detecting the separated ultraviolet Raman scattered light, prior to the execution of the ultraviolet Raman spectroscopy, the ultraviolet laser light source The sample is irradiated with an ultraviolet laser beam from, the reflected light from the sample is detected by an ultraviolet image sensor, the visualization and specification of the measurement point is performed, and the stress value at the measurement point by the ultraviolet Raman spectroscopy or A stress measuring method characterized by measuring a stress distribution. 14. The stress measuring method according to claim 13, wherein a confocal optical system is used as an optical system for guiding the reflected light to the ultraviolet image sensor. 15. The stress measuring method according to claim 13 or 14, wherein the stress measuring is performed in a vacuum. 16. The stress measuring method according to claim 13 or 14, wherein the stress measuring is performed in a vacuum of 10 μPa to 50 kPa. 17. An ultraviolet laser light source, an ultraviolet objective lens for irradiating the sample surface with the ultraviolet laser light from the ultraviolet laser light source, a spectroscope, and an ultraviolet ray for guiding the ultraviolet Raman scattered light from the sample surface to the spectroscope. In a stress measurement method for measuring stress in the sample by ultraviolet Raman spectroscopy using a half mirror and a detector that detects spectrally separated Raman scattered light, a second ultraviolet laser is provided prior to performing the ultraviolet Raman spectroscopy. Irradiating the sample with ultraviolet laser light from a light source, detecting the reflected light from the sample with an ultraviolet image sensor, performing visualization and specification of the measurement point, the stress value at the measurement point by the ultraviolet Raman spectroscopy Alternatively, a stress measuring method characterized by measuring a stress distribution. 18. The stress measuring method according to claim 17, wherein a confocal optical system is used as an optical system for guiding the reflected light to the ultraviolet image sensor. 19. The stress measuring method according to claim 17, wherein the stress measuring is performed in a vacuum. 20. The stress measuring method according to claim 17, wherein the stress measuring is performed in a vacuum of 10 μPa to 50 kPa. 21. A visible laser light source, an objective lens for irradiating the sample surface with laser light from the visible laser light source in a spot shape, a spectroscope, and a half mirror and a spectroscope for guiding Raman scattered light from the sample surface to the spectroscope. And a detector for detecting Raman scattered light, in a stress measuring device for measuring the stress in the sample by Raman spectroscopy, the visible laser light source, the laser light from the visible laser light source at a predetermined scanning frequency Polarizing means for polarizing and outputting toward the sample in a scanning direction and a sub-scanning direction orthogonal to the scanning direction, and an objective lens for irradiating the sample with polarized laser light to collect reflected light from the sample, At least a plurality of light receiving elements arranged regularly in the main scanning direction is included to receive the reflected light condensed by the objective lens and convert it into an electric signal. Consists of a Jisensa, stress measuring device, characterized in that a means for specifying to visualize the measurement point. 22. The stress measuring apparatus according to claim 21, wherein the polarizing means includes an acousto-optical AO element for scanning the visible laser light from the visible laser light source on the sample and a galvano mirror. Characteristic stress measuring device. 23. The stress measuring device according to claim 21 or 22, further comprising: focus detecting means for receiving a part of a light beam incident on the image sensor to detect focus information of a sample. Stress measuring device. 24. The stress measuring apparatus according to claim 21, further comprising a sample driving unit that drives the sample at least in a direction orthogonal to the main scanning direction. measuring device. 25. A visible laser light source, an objective lens for irradiating the sample surface with laser light from the visible laser light source in a spot shape, a spectroscope, and a half mirror and a spectroscope for guiding Raman scattered light from the sample surface to the spectroscope. A detector for detecting the generated Raman scattered light, and a stress measuring device for measuring the stress in the sample by Raman spectroscopy, wherein the second visible laser light source and the laser light from the second visible laser light source are scanned in a predetermined manner. Polarizing means for polarizing in the main scanning direction and the sub-scanning direction orthogonal thereto at a frequency and outputting toward the sample, and the objective for irradiating the sample with polarized laser light and collecting the reflected light from the sample A lens and a plurality of light receiving elements regularly arranged in the main scanning direction are included, and the reflected light condensed by the objective lens is received and converted into an electric signal. Consists of a image sensor, the stress measuring device, characterized in that a means for specifying to visualize the measurement point. 26. The stress measuring device according to claim 25, wherein the polarization unit includes an AO element for scanning the visible laser light from the second visible laser light source on the sample and a galvano mirror. And stress measuring device. 27. The stress measuring apparatus according to claim 25 or 26, further comprising: focus detecting means for receiving a part of a light beam incident on the image sensor to detect focus information of a sample. Stress measuring device. 28. The stress measuring apparatus according to claim 25, further comprising sample driving means for driving the sample in at least a direction orthogonal to the main scanning direction. measuring device. 29. A visible laser light source, an objective lens for irradiating the sample surface with laser light from the visible laser light source in a spot shape, a spectroscope, and a half mirror and a spectroscope for guiding Raman scattered light from the sample surface to the spectroscope. In the stress measuring device comprising a detector for detecting the Raman scattered light, which measures the stress in the sample by Raman spectroscopy, an ultraviolet laser light source, an ultraviolet laser light from the ultraviolet laser light source is mainly scanned at a predetermined scanning frequency. Direction and a polarizing means for polarizing in the sub-scanning direction orthogonal thereto and outputting toward the sample, the objective lens for irradiating the sample with polarized ultraviolet laser light and condensing the reflected light from the sample, At least the plurality of light receiving elements regularly arranged in the main scanning direction are included and the reflected light condensed by the objective lens is received and converted into an electric signal. It consists of an outer image sensor,
A stress measuring device comprising means for visualizing and specifying a measurement point. 30. The stress measuring device according to claim 29, wherein the polarizing means includes an ultraviolet AO element for scanning the ultraviolet laser light from the ultraviolet laser light source on the sample and an ultraviolet galvano mirror. And stress measuring device. 31. The stress measuring device according to claim 29, further comprising a focus detecting means for receiving a part of a light beam incident on the ultraviolet image sensor and detecting focus information of the sample. And stress measuring device. 32. The stress measuring apparatus according to claim 29, further comprising sample driving means for driving the sample at least in a direction orthogonal to the main scanning direction. measuring device. 33. An ultraviolet laser light source, an ultraviolet objective lens for irradiating the sample surface with ultraviolet laser light from the ultraviolet laser light source, a spectroscope, and a half for guiding the ultraviolet Raman scattered light from the sample surface to the spectroscope. A stress measuring device comprising a mirror and a detector for detecting dispersed UV Raman scattered light, in a stress measuring device for measuring stress in the sample by UV Raman spectroscopy, a visible laser light source, and a predetermined laser light from the visible laser light source. Polarizing means for polarizing in a main scanning direction and a sub-scanning direction orthogonal thereto at a scanning frequency and outputting toward the sample; The objective lens and at least the plurality of light receiving elements regularly arranged in the main scanning direction are included, and the reflected light condensed by the objective lens is received to generate electricity. Consists an image sensor that converts the item, the stress measuring device, characterized in that a means for specifying to visualize the measurement point. 34. The stress measuring device according to claim 33, wherein the polarization unit includes an AO element that scans the visible laser light from the visible laser light source on the sample and a galvanometer mirror. Stress measuring device. 35. The stress measuring apparatus according to claim 33, further comprising a focus detecting unit that receives a part of a light beam incident on the image sensor and detects focus information of a sample. Stress measuring device. 36. The stress measuring device according to claim 33, further comprising a sample driving unit that drives the sample at least in a direction orthogonal to the main scanning direction. measuring device. 37. An ultraviolet laser light source, an ultraviolet objective lens for irradiating a sample surface with the ultraviolet laser light from the ultraviolet laser light source, a spectroscope, and an ultraviolet ray for guiding the ultraviolet Raman scattered light from the sample surface to the spectroscope. A stress measuring device comprising a half mirror and a detector for detecting spectrally separated Raman scattered light, in a stress measuring device for measuring stress in the sample by ultraviolet Raman spectroscopy, the ultraviolet laser light source, and laser light from the ultraviolet laser light source. Polarizing means for polarizing in the main scanning direction and the sub-scanning direction orthogonal to this at a predetermined scanning frequency and outputting toward the sample, and polarized ultraviolet laser light is irradiated to the sample to collect reflected light from the sample. The ultraviolet objective lens that shines,
An ultraviolet image sensor, which includes at least a plurality of light receiving elements regularly arranged in the main scanning direction, receives reflected light condensed by the ultraviolet objective lens and converts the reflected light into an electric signal, and visualizes and specifies a measurement point. A stress measuring device, characterized in that means for converting the stress is provided. 38. The stress measuring device according to claim 37, wherein the polarizing means includes an ultraviolet AO element that scans the ultraviolet laser light from the ultraviolet laser light source on the sample, and an ultraviolet galvanometer mirror. And stress measuring device. 39. The stress measuring device according to claim 37 or 38, further comprising focus detecting means for receiving a part of a light beam incident on the ultraviolet image sensor and detecting focus information of the sample. And stress measuring device. 40. The stress measuring device according to claim 37, further comprising a sample driving unit that drives the sample in at least a direction orthogonal to the main scanning direction. measuring device. 41. An ultraviolet laser light source, an ultraviolet objective lens for irradiating a sample surface with the ultraviolet laser light from the ultraviolet laser light source, a spectroscope, and an ultraviolet ray for guiding the ultraviolet Raman scattered light from the sample surface to the spectroscope. A stress measuring device comprising a half mirror and a detector for detecting dispersed ultraviolet Raman scattered light, wherein the stress measuring device measures stress in the sample by ultraviolet Raman spectroscopy, comprising: a second ultraviolet laser light source; and a second ultraviolet laser light source. A polarizing means for polarizing the ultraviolet laser light of the predetermined scanning frequency in the main scanning direction and the sub-scanning direction orthogonal thereto and outputting toward the sample, and irradiating the sample with polarized ultraviolet laser light from the sample By the ultraviolet objective lens including the ultraviolet objective lens that collects reflected light, and at least a plurality of light receiving elements that are regularly arranged in the main scanning direction. Consists of a UV image sensor for converting an electrical signal to receive light reflected light, stress measurement apparatus characterized in that a means for specifying to visualize the measurement point. 42. The stress measuring device according to claim 41, wherein the polarizing means includes an ultraviolet AO element for scanning the ultraviolet laser light from the second ultraviolet laser light source on the sample and an ultraviolet galvano mirror. A stress measuring device characterized by: 43. The stress measuring device according to claim 41 or 42, further comprising: focus detecting means for receiving a part of a light beam incident on the ultraviolet image sensor and detecting focus information of the sample. And stress measuring device. 44. The stress measuring apparatus according to claim 41, further comprising sample driving means for driving the sample at least in a direction orthogonal to the main scanning direction. measuring device. 45. The stress measuring device according to any one of claims 29 to 44, further comprising means for evacuating an optical path of at least an ultraviolet laser beam. 46. The stress measuring device according to claim 29, wherein at least the optical path of the ultraviolet laser light is 10 μPa to 50 kP.
A stress measuring device comprising means for applying a vacuum of a. 47. A semiconductor manufacturing method, wherein the stress measuring method according to claim 1 is used for stress measurement in a semiconductor. 48. A semiconductor manufacturing apparatus comprising the stress measuring apparatus according to claim 21 for measuring stress in a semiconductor. 49. A semiconductor manufacturing process using the semiconductor manufacturing method according to claim 47. 50. A semiconductor manufacturing process using the semiconductor manufacturing apparatus according to claim 48. 51. A semiconductor manufactured using the semiconductor manufacturing process according to claim 49. 52. A semiconductor manufactured using the semiconductor manufacturing process according to claim 50.