JP2010286493A - Substrate inspecting apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate inspecting apparatus, capable of precisely measuring automatically and analyzing at least the stress and film thickness at a prescribed measuring point in each of all the manufactured semiconductor substrates, so as to contribute to the establishment of a substrate production process of high performance and high productivity. <P>SOLUTION: The inspecting apparatus includes: a conveying device for conveying a wafer to be measured 3 onto a movable specimen support 4; an optical microscope 10 for observing a measuring point P on the surface of the wafer 3 on the specimen support 4; an ellipsometer optical system 40 for irradiating the measuring point P with polarized light L<SB>3</SB>of a multi-wavelength to output information regarding the wafer surface; a Raman spectroscopic optical system 20 for irradiating the measuring point P on the wafer 3 with a laser beam to output other information regarding the wafer 3; and a computer 60 for analyzing and outputting physical information, such as film thickness, refractive index, stress, and composition, on the basis of the pieces of information thus provided. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an inspection apparatus for a substrate such as a semiconductor wafer or a liquid crystal panel, and in particular, a thin film formed on the surface of these substrates, or stress and composition of various patterned microfabricated portions, and further, a thin film thickness and refractive index. It is related with the board | substrate inspection apparatus which measures automatically.

  In semiconductor manufacturing processes, quality control of substrates such as semiconductor wafers is extremely important. In particular, a semiconductor formed using this semiconductor wafer by obtaining physical information such as thickness, refractive index, stress, composition, etc. of the thin film formed on the surface of the semiconductor wafer and managing it so that it is in an appropriate state. It is necessary to maintain devices and electronic circuits with stable performance.

  By the way, in a semiconductor device, a CMOS circuit is used in order to realize a high-performance large-scale integrated circuit (LSI) in a sub 100 nm region. In semiconductor manufacturing, it is extremely important to improve the performance and speed of the CMOS circuit. It is. In order to increase the performance and speed of the CMOS circuit, there are a method of shortening the gate length and a method of increasing the carrier speed. If the circuit is miniaturized to shorten the gate length, the short channel effect is achieved. Therefore, there is a limit to miniaturization of the circuit.

  Therefore, in recent years, as a technique for achieving high performance without reducing the gate length so much, a semiconductor manufacturing technique using strained silicon having carrier mobility much higher than that of normal silicon has attracted attention. In this technique, a silicon layer is formed on a SiGe layer having a large lattice constant, and tensile strain is applied to the silicon layer (thin film), thereby modulating the silicon band structure and realizing improvement in carrier mobility. In addition, in order to improve the performance of the MOSFET while suppressing the short channel effect, the gate oxide film is also thinned, but there is a limit to this, so the high performance of the MOSFET without the thinning of the oxide film. Strained silicon technology is attracting attention as a means of achieving this.

  Therefore, in particular, in recent semiconductor wafer manufacturing processes, it is becoming necessary to perform quality control and productivity improvement by performing inspections relating to thin film thickness and stress measurement. Conventionally, Raman spectroscopy is known for measuring stress of semiconductor materials such as silicon. The stress measurement using this Raman spectroscopic technique is to estimate the stress at the measurement point from the change in the peak position of the Raman spectrum by utilizing the shift of the Raman spectrum when the stress is applied, for example, with single crystal silicon. .

  The following Patent Document 1 shows a configuration of a stress measurement method and a stress measurement apparatus that perform stress measurement using Raman spectroscopy in a semiconductor device manufacturing process. It is conceivable to perform quality control and productivity improvement by inspecting each part related to stress in the manufacturing process by using a stress measuring apparatus as disclosed in Patent Document 1.

JP-A-8-5471 JP 9-213652 A

  However, since the stress measuring apparatus shown in Patent Document 1 does not support the automatic measurement of the surface of a plurality of wafers sequentially, the quality evaluation is performed on all manufactured semiconductor wafers and semiconductor devices. Therefore, it has been difficult to perform the process management accurately in the wafer manufacturing process. In addition, regarding the manufacture of semiconductor wafers, it is important to obtain the film thickness in addition to the stress at each microfabricated part and to know the correlation between the stress and the film thickness. Both thicknesses could not be measured.

  In addition, when a thick oxide film such as a trench structure is embedded in a semiconductor device, it is conceivable that particularly significant stress concentration is likely to occur around the finely processed portion. For this reason, by forming a thick oxide film in the micro-processed portion in the sub 100 nm region, even when a stress similar to that for forming a relatively thin oxide film is applied, it occurs at the interface between the thin film and the thin film. The stress to be generated increases and heat and stress may occur, which may cause problems such as thermal migration and stress migration. Therefore, obtaining the relationship between stress and film thickness in the same minute region is important in wafer quality control.

  In particular, in the future development of semiconductor wafers, it is expected that the strained silicon technology will be introduced. For this reason, it is increasingly important to analyze the correlation between film thickness and stress by measuring various physical quantities such as the internal stress and film thickness of strained silicon, and the composition of the underlying SiGe film. It is extremely important to adjust the manufacturing process so as to optimally control the film thickness conditions and manufacture the semiconductor wafer so that a higher performance integrated circuit can be manufactured. For this reason, it is considered that an inspection process for all the manufactured wafers is necessary when commercializing semiconductor wafers using strained silicon technology, but there is a substrate inspection device that can easily perform stress measurement and film thickness measurement. I did not.

  The laser annealing apparatus described in Patent Document 2 is equipped with a Raman spectrophotometer and an ellipsometer, and can measure the structure and refractive index of the crystalline silicon film immediately after laser annealing. In this laser annealing apparatus, Since the measurement points of the Raman ellipsometer optical system are different, various physical information in a specific minute region could not be obtained at once. Moreover, since the apparatus of patent document 2 is incorporated in the apparatus of a manufacturing process, it was difficult to apply for the use as an inspection apparatus.

  The present invention has been made in consideration of the above-mentioned matters, and at a predetermined measurement point among the surfaces of all manufactured semiconductor substrates, at least the thickness and internal stress of the thin film are automatically and sequentially measured, Strict quality control of each substrate will ensure that the causes of defects are identified and productivity will be improved, and the correlation between film thickness and stress will be analyzed accurately to create a higher performance semiconductor substrate. The main purpose is to provide a substrate inspection apparatus that can establish a manufacturing process necessary for manufacturing, and other purposes include physical quantities such as internal stress, refractive index, and composition of a semiconductor substrate in addition to the above-mentioned purposes. The distribution in the film thickness direction can be easily measured, and the physical quantity can be accurately measured without being affected by changes in the ambient environment temperature, so that the inspection accuracy can be further improved. .

  In order to achieve the main object described above, a substrate inspection apparatus according to claim 1 of the present invention includes a sample stage configured to be movable, a transport device that transports a sample to be measured onto the sample stage, and a sample stage. An optical microscope for observing the measurement point of the measurement target sample, an ellipsometer optical system for irradiating the measurement point with polarized light of multiple wavelengths and outputting information on the measurement target sample, and a laser at the measurement point of the optical microscope A Raman spectroscopic optical system that irradiates light and outputs other information about the measurement object, and an arithmetic processing unit that analyzes and outputs stress or composition in addition to the film thickness or refractive index at the measurement point using the obtained information It is characterized by having.

  In order to achieve the other object, a substrate inspection apparatus according to claim 2 of the present invention includes a sample stage configured to be movable, a transport apparatus that transports a sample to be measured onto the sample stage, An optical microscope for observing the measurement point of the measurement target sample on the sample stage, an ellipsometer optical system that outputs information on the measurement target sample by irradiating the measurement point with multi-wavelength polarized light, and measurement of the optical microscope A Raman spectroscopic optical system that irradiates a point with laser light and outputs other information about the measurement target, and uses the obtained information to analyze and output the stress or composition in addition to the film thickness or refractive index at the measurement point A laser capable of selectively automatically switching a plurality of laser light sources having different wavelengths and a laser beam irradiated from the plurality of laser light sources to a measurement point of a sample to be measured. Is characterized in that selection device is provided.

  In the substrate inspection apparatus according to claim 1 or claim 2 of the present invention, a calibration sample is installed at a position close to the sample to be measured on the sample stage, and the calibration sample is placed by an ellipsometer optical system and a Raman spectroscopic optical system. It is desirable to be able to calibrate information on the measurement target sample output from the ellipsometer optical system and the Raman spectroscopic optical system with reference to information obtained by measurement at any time.

  In the board | substrate inspection apparatus in any one of Claims 1-3 of this invention, while adjusting the position of the sample stand in the height direction, confirming the position of the focus using the image observed with the optical microscope. Thereafter, the measurement may be performed using an ellipsometer optical system and a Raman spectroscopic optical system.

  The substrate inspection apparatus according to any one of claims 1 to 4 of the present invention, wherein the arithmetic processing unit includes coordinates indicating the position of the measurement point of the measurement target sample, and light used for the Raman spectroscopic optical system and the ellipsometer optical system. Of inspection recipe data consisting of a measurement condition including information on the wavelength range, detection integration time, and calibration curve to be used, and an inspection result output condition indicating an output pattern of the inspection result. It may have an automatic inspection function for sequentially performing the same inspection on the measurement target sample.

  In the substrate inspection apparatus according to claim 5 of the present invention, the arithmetic processing unit, as data indicating the position of the measurement point of the inspection recipe data, recognizes an image formed by observing the measurement point in the measurement target sample with an optical microscope. And an ellipsometer optical system after adjusting the plane position of the measurement point by moving the sample stage in the plane direction by comparing the image obtained by observing the surface of the sample to be measured with an optical microscope and the recognition image. Alternatively, the measurement may be performed using a Raman spectroscopic optical system.

  According to a seventh aspect of the present invention, there is provided a substrate inspection apparatus, a sample stage configured to be movable, a transport apparatus that transports a measurement target sample onto the sample stage, and a measurement point of the measurement target sample on the sample stage. An optical microscope for observing the optical microscope, a Raman spectroscopic optical system for irradiating the measurement point of the optical microscope with laser light and outputting other information about the sample to be measured, and using the obtained information, stress or distortion at the measurement point is measured. And an arithmetic processing unit for analyzing and outputting.

  Furthermore, the substrate inspection apparatus according to claim 8 of the present invention includes a sample stage that is configured to be movable, a transport device that transports the sample to be measured onto the sample stage, and a measurement point of the sample to be measured on the sample stage. An optical microscope that observes the light, a Raman spectroscopic optical system that outputs information about the sample to be measured by irradiating the measurement point of the optical microscope, and analyzes the stress or distortion at the measurement point using the obtained information The Raman spectroscopic optical system selectively and automatically switches a plurality of laser light sources having different wavelengths and a laser beam irradiated from the plurality of laser light sources to a measurement point of a measurement target sample. A possible laser light selection device is provided.

  In the substrate inspection apparatus according to claim 7 or claim 8 of the present invention, a calibration sample is installed at a position close to the sample to be measured on the sample stage, and the calibration sample is measured at any time by a Raman spectroscopic optical system. It is desirable to be able to calibrate information relating to the measurement target sample output from the Raman spectroscopic optical system on the basis of the information obtained by the above (claim 9).

  In the first aspect of the present invention, in the minute region on the surface of the sample to be measured, for example, the film thickness of the thin film can be measured with high accuracy using an ellipsometer optical system, and the stress in the same minute region is measured using a Raman spectroscopic optical system. Can be measured accurately. In other words, by measuring both the film thickness and stress of the thin film in the same minute area with high accuracy and displaying them simultaneously etc., it is possible to grasp the film thickness dependence of the stress and to obtain the required film thickness. In order to manufacture a semiconductor substrate in which stress concentration does not occur in a state where the thin film is formed, the manufacturing process can be adjusted as appropriate. In addition, since the optical microscope is provided so that the measurement point can be observed, the operator can confirm the state of the surface of the sample to be measured by observation, and the operation becomes easy.

  In particular, the Raman spectroscopic optical system is suitable for measuring the stress and composition applied to a minute region with high accuracy, and the ellipsometer optical system is suitable for measuring the film thickness and refractive index in the minute region with high accuracy. Therefore, a combination of a Raman spectroscopic optical system and an ellipsometer optical system is optimal for measurement of stress and film thickness, which are important physical quantities for manufacturing a semiconductor substrate with optimal performance and durability. In particular, since strained silicon technology has been adopted in the manufacture of semiconductor substrates in recent years, it is possible to measure the correlation between stress and film thickness on the same microscopic area in the Raman spectroscopic optical system and the ellipsometer optical system. It will greatly contribute to progress and productivity.

  Furthermore, since all the manufactured semiconductor substrates can be taken out one by one and the measured values of stress and film thickness on the surface can be obtained sequentially, it can be applied to 100% inspection of semiconductor substrates, and product management is meticulous. Thus, the reliability of the semiconductor substrate manufactured through the process is improved. In addition, when a defect occurs, the cause can be easily determined from the measurement result, and the productivity can be improved.

  In the invention described in claim 2, stress and film thickness information, which are important physical quantities for manufacturing the semiconductor substrate with the optimum performance and durability by combining the Raman spectroscopic optical system and the ellipsometer optical system, are simultaneously obtained. In addition to the effect that the correlation can be measured in the same microscopic region, when measuring the stress and composition with the Raman spectroscopic optical system, laser beams with different wavelengths can be selectively used from multiple laser sources to the measurement point of the sample to be measured. In addition, by automatically switching and irradiating, the distribution of stress and composition in the depth direction (film thickness direction) of the sample to be measured can be easily measured, and this is widely used in the manufacture of semiconductor substrates in recent years. Even when a semiconductor substrate using strained silicon is used as a measurement target, the internal stress of the strained silicon, and further, the SiGe film as the underlying layer Securely measuring various physical quantities such as growth, it is possible to perform a more accurate substrate inspection.

  In particular, an ellipsometer optical system based on information obtained by installing a calibration sample in a position close to the sample to be measured on the sample stage and measuring the calibration sample with an ellipsometer optical system and a Raman spectroscopic optical system as needed. When the information on the sample to be measured output from the Raman spectroscopic optical system can be calibrated (Claim 3), a wavelength shift may occur due to, for example, distortion of the optical component due to fluctuations in ambient temperature. Even if optical system fluctuations such as optical filter deterioration or Raman spectrum peak shift shifts due to temperature effects of the sample to be measured itself are calibrated based on information obtained by calibration sample measurement. Therefore, it is possible to accurately measure various physical quantities regardless of environmental temperature fluctuations, and to further improve the substrate inspection accuracy.

  In addition, after adjusting the position of the sample stage in the height direction while confirming the position of the focal point using the image observed with an optical microscope or the intensity of the light obtained when the sample to be measured is irradiated with laser light When the measurement is performed using the ellipsometer optical system and the Raman spectroscopic optical system (Claim 4), the ellipsometer optical system can be adjusted by adjusting the position of the sample stage in the height direction even when the sample to be measured is warped. In addition, the Raman spectroscopic optical system can reliably focus on the measurement point, and the film thickness and refractive index at the measurement point can be analyzed with high accuracy.

  In addition, the arithmetic processing unit includes coordinates indicating the position of the measurement point in the measurement target sample, the wavelength range of light used for the Raman spectroscopic optical system and the ellipsometer optical system, the integration time at the time of detection, and the calibration curve used. When having inspection recipe data consisting of measurement conditions and inspection result output conditions indicating an output pattern of inspection results, and having an automatic inspection function for sequentially performing the same inspection on a plurality of measurement target samples according to the inspection recipe data ( According to the fifth aspect of the present invention, it is possible to automatically automatically perform a common inspection corresponding to the inspection contents set using the inspection recipe data for all the measurement target samples. Further, the inspection contents can be easily changed by changing the inspection recipe data.

  Furthermore, the arithmetic processing unit has a recognition image consisting of an image observed by the optical microscope of the measurement point in the measurement target sample as data indicating the position of the measurement point of the inspection recipe data, and the surface of the measurement target is observed by the optical microscope. When the measurement is performed using an ellipsometer optical system and a Raman spectroscopic optical system after moving the sample stage in the plane direction and adjusting the plane position of the measurement point by comparing the recognized image with the recognition image ( According to the sixth aspect of the present invention, physical information at a measurement point corresponding to a specific circuit pattern portion can be automatically inspected in a state where an electronic circuit has already been formed on the measurement target sample. That is, it is possible to determine in advance from the measured values of the film thickness and stress at the measurement point whether the measurement point corresponding to the specific circuit pattern portion is in a state where sufficient performance can be obtained.

  In the invention according to claim 7, in the micro area on the surface of the sample to be measured, for example, the stress in the micro area can be accurately measured using the Raman spectroscopic optical system. That is, in order to manufacture a semiconductor substrate on which a thin film to which stress of appropriate strength is applied is manufactured, the manufacturing process can be adjusted as appropriate. In addition, since the optical microscope is provided so that the measurement point can be observed, the operator can confirm the state of the surface of the measurement object by observation, and the operation becomes easy.

  In the invention described in claim 8, it is possible to accurately measure the stress in the micro area of the sample to be measured, and to appropriately adjust the manufacturing process of the semiconductor substrate for forming the thin film to which the stress having the appropriate strength is applied. In addition to the effect of being able to measure, when measuring stress and composition with the Raman spectroscopic optical system, measurement is performed by selectively and automatically switching and irradiating laser beams of different wavelengths from multiple laser sources to the measurement point of the sample to be measured. The distribution of stress and composition in the depth direction (film thickness direction) of the target sample can be easily measured, and this enables the semiconductor substrate using strained silicon that has been widely used in the manufacture of semiconductor substrates in recent years. Even if it is a measurement object, various physical quantities such as the internal stress of the strained silicon and the composition of the SiGe film that is the underlayer are reliably measured to detect the substrate with higher accuracy. It can be carried out.

  In particular, a calibration sample is placed at a position close to the sample to be measured on the sample stage, and the information obtained by measuring the calibration sample with the Raman spectroscopic optical system as needed is output from the Raman spectroscopic optical system. When the information on the measurement target sample can be calibrated (Claim 9), due to fluctuations in the ambient environment temperature, for example, a wavelength shift occurs due to distortion of optical components, or optical such as optical filter degradation Even if there is a shift in the peak shift of the Raman spectrum due to system fluctuations or the temperature effect of the sample being measured, it can be calibrated based on information obtained from the measurement of the calibration sample. Regardless of the fluctuation, various physical quantities can be measured more accurately, and the substrate inspection accuracy can be further improved.

1 is a plan view schematically showing an overall configuration of a substrate inspection apparatus according to a first embodiment of the present invention. It is a figure which shows the structure of the principal part of the board | substrate inspection apparatus which concerns on 1st Example. It is a figure explaining an example of the measuring point of the board | substrate inspection apparatus which concerns on 1st Example. It is a figure which shows the structure of the principal part of the board | substrate inspection apparatus which concerns on 2nd Example of this invention. It is a cross-section figure of a distortion silicon substrate which is an example of a measuring object substrate. It is a figure which shows the relationship between the wavelength and spectrum intensity at the time of the Raman spectrum measurement of a distortion silicon substrate. It is a block diagram of the principal part which shows the measurement state of the sample for a calibration by the board | substrate inspection apparatus which concerns on 2nd Example. It is a figure which shows the structure of the principal part of the board | substrate inspection apparatus which concerns on 3rd Example of this invention.

  FIG. 1 is a plan view schematically showing an overall configuration of a substrate inspection apparatus 1 according to a first embodiment of the present invention, and FIG. 2 is a diagram showing a configuration of a main part of the substrate inspection apparatus 1. In FIG. 1, 2A is a measurement chamber of a substrate inspection apparatus 1 equipped with a Raman spectroscopic optical system and an ellipsometer optical system, 2B is a transfer device adjacent to the measurement chamber 2A, and 3 is a silicon layer on a SiGe layer having a large lattice constant, for example. A substrate such as a silicon wafer formed by applying a strained silicon technique formed by forming a thin film of (a sample to be measured, hereinafter referred to as a wafer), 4 in addition to the horizontal direction (X, Y direction) A sample stage 5 configured to be movable in a three-dimensional direction in the height direction (Z direction) is a driving unit for the sample stage 4.

  In FIG. 1, reference numeral 6 denotes a robot arm having a function of grasping the wafer 3 and transporting it onto the sample stage 4, and reference numeral 7 denotes a plurality of wafers 3 stacked in a vertical direction and stored at a predetermined interval. A case 8 is a case base on which the case 7 is placed. By using the robot arm 6, for example, the wafers 3 stacked and stored in the vertical direction can be taken out one by one in order and transferred onto the sample stage 4, and the inspected wafer 3 can be returned to the original location again. It is. However, when two cases 7 are arranged side by side as in the first embodiment, the wafers 3 taken out from one case 7 and inspected can be sequentially stored in the other case 7.

In FIG. 2, reference numeral 10 denotes an optical microscope for observing the surface of the wafer 3. The optical microscope 10 includes a CCD camera 11 disposed on an optical axis L ₁ substantially perpendicular to the surface of the wafer 3, and this light. A condenser lens 12 disposed on the axis L ₁ , a beam splitter (half mirror) 13, an objective lens 14, a white light source 15 for irradiating the wafer 3 with white light via the half mirror 13, and a shutter 16; And a collimator lens 17. Reference numeral 18 denotes a movable mirror provided on the optical axis L ₁ , and the mirror 18 is moved to a position indicated by a virtual line in FIG. The measurement point P in the region is configured to be observed. Incidentally, the white light source 15, a shutter 16, a collimator lens 17 is provided on an optical axis perpendicular to the optical axis L _1.

Reference numeral 20 denotes a Raman spectroscopic optical system that detects Raman light by irradiating the wafer 3 with laser light using the same optical axis L ₁ as that of the optical microscope 10 by moving the mirror 18 to the position indicated by the solid line in FIG. The Raman spectroscopic optical system 20 includes a spectroscope 21 disposed on an optical axis L ₂ that is reflected by the mirror 18 so as to be orthogonal to the optical axis L _1, and a detector 22 that detects spectroscopic Raman light. A condensing lens 23 for adjusting the Raman light incident on the spectroscope 21, a pinhole 24, a collimator lens 25, a condensing lens 26, and a notch filter 27 that reflects only the Rayleigh light of the Raman analysis. A laser light source 28 for irradiating laser light using the notch filter 27, a shutter 29, a condensing lens 30, and an optical filter 31 for removing light having a wavelength other than the laser light that excites Raman light. , a beam splitter 32 which reflects 5-10% of the light in the rear of the notch filter 27 on the optical axis L _2, a condenser lens 33, a detector 34 for focus detection Yes To have.

The Raman spectroscopic optical system 20 is configured to use the objective lens 14 in common with the optical microscope 10. The laser light source 28, a shutter 29, a condenser lens 30, the optical filter 31 is provided on an optical axis perpendicular to the optical axis L _2. Similarly, a beam splitter 32, also the condenser lens 33 and the detector 34 are provided on another optical axis perpendicular to the optical axis L _2.

Reference numeral 40 denotes an ellipsometer optical system arranged to irradiate the measurement point P on the wafer 3 on which the optical microscope 10 is focused with the multi-wavelength polarized light L ₃ and output physical information at the measurement point P. It is. The ellipsometer optical system 40 includes an incident optical system 41 that irradiates light L ₃ polarized from an obliquely upward direction on one side with respect to the surface of the wafer 3 on the sample table 4, and the other side on the sample table 4. A detection optical system 42, a spectroscope 43, and a detector 44 provided obliquely upward with respect to the surface.

  The incident optical system 41 includes, for example, a white light source 45 made of, for example, a xenon lamp that emits light in a wide wavelength region of 190 to 830 nm, a shutter 46, a slit 47 for narrowing light emitted from the white light source 45, a beam A reduction optical system 48 and a polarizer 49 are included. The beam contracting optical system 48 includes, for example, two concave mirrors 48a and 48b.

On the other hand, the detection optical system 42 outputs a change amount of the polarized light L ₄ reflected when the polarized light L ₃ is irradiated to the measurement point P on the surface of the wafer 3, for example, to the spectroscope 43. 50, an analyzer 51, a beam reduction optical system 52 including two concave mirrors 52 a and 52 b, an optical fiber 53 for taking out a signal to the spectroscope 43, and the beam reduction optical system 52 and the optical fiber 53. A pinhole portion 54 is provided therebetween.

  The pinhole portion 54 is formed, for example, by opening a plurality of pinholes 57 having different sizes (diameters) at an appropriate interval on the same circumference of a disk 56 attached to the rotating shaft 55a of the stepping motor 55. It will be. Therefore, as shown in FIG. 2, only when any one of the pinholes 57 is located on the optical path connecting the beam reducing optical system 52 and the optical fiber 53, the light emitted from the beam reducing optical system 52 is The light enters the optical fiber 53 through the pinhole 57.

60 is connected to the transfer device 2B, the drive unit 5 of the sample stage 4, the optical microscope 10, the Raman spectroscopic optical system 20, the ellipsometer optical system 40 and the drive unit (not shown) of the movable mirror 18 to inspect the substrate. An arithmetic processing unit (hereinafter referred to as a computer) that controls the entire apparatus 1. In the computer 60, for example, by controlling the transport device 2B, the drive unit 5, the optical microscope 10, the Raman spectroscopic optical system 20, the ellipsometer optical system 40, and the like, a plurality of pieces housed in the case 7 are stored. A series of inspections are performed on each wafer 3 in a state where the wafers 3 are sequentially taken out from the wafers 3 and placed on the sample table 4, and the inspected wafers 3 are stored in the case 7 again. A control program Pa showing the operation of the inspection sequence, an inspection result output program Pb showing an operation of processing the inspection results and displaying them on a screen (not shown) or recording them on a medium, and measurement conditions and inspection results for each wafer 3 Inspection recipe data D ₁ obtained by recording output conditions and the like, and inspection result storage data D ₂ are recorded.

The inspection recipe data D ₁ is the measurement point data Da, and measurement condition data Db, consisting of the output setting data Dc. The measurement point data Da sets, for example, several to tens of measurement points P _{1 to} P _n (including the measurement points P in the state shown in FIG. 2) at regular intervals on the surface of each wafer 3. Coordinates indicating the positions of the respective measurement points P, P _{1 to} P _n are recorded. In the example shown in FIG. 2, n measurement points P _{1 to} P _n are defined at equal intervals in the two-dimensional direction. Yes.

The measurement condition data Db indicates, for example, the wavelength range Db _{1 of} light used for the optical microscope 10, the Raman spectroscopic optical system 20, and the ellipsometer optical system 40, and the integration time when light is detected by the detectors 22 and 44. Various calibration curves Db ₃ used for obtaining the stress and composition of the thin film and the film thickness and refractive index of the thin film from the integration time Db ₂ and the intensity and spectrum shift amount of the light of each wavelength detected by the detectors 22 and 44. It is data including information indicating.

The output condition data Dc, for example, selects stress, film thickness, etc. as physical quantities to be output among physical quantities obtained as inspection results, and defines the output layout by specifying how to express the correlation between stress and film thickness. It shows the output pattern Dc _1. In the output pattern Dc ₁ , an upper limit and a lower limit of each physical quantity are determined, and a setting that outputs a value exceeding this range as a defect, and statistics such as variations in each physical quantity are displayed for each of a plurality of measurement points P _{1 to} P _n. A setting of outputting for each wafer can be considered.

  Further, the correlation between the stress and the film thickness may be expressed by a function for deriving an estimated value of carrier mobility from the measured values of the stress and the film thickness, for example. The function indicating the correlation is obtained by measuring the carrier mobility calculated by measuring the stress and the film thickness in advance using a wafer 3 as a plurality of samples, and measuring the characteristics of the CMOS circuit after forming the CMOS circuit. It is possible to ask based on. Further, since this function is information included in the output condition data Dc, it can be updated at any time according to the actually measured value.

Therefore, the control program Pa includes a measurement point data Da included in the inspection recipe data D _1, by referring to the measurement condition data Db, performing an inspection in accordance with the same criteria for each wafer 3. Further, the inspection result output program Pb refers to the output condition data Dc included in the inspection recipe data D ₁ , so that each physical quantity obtained by inspecting each measurement point P _{1 to} P _n on the surface of each wafer 3 is obtained. The measured value is displayed as an output pattern Dc ₁ of the inspection result output condition data Dc with a predetermined output layout using a screen (not shown) or the like, or recorded as inspection result storage data D ₂ .

  Hereinafter, the operation of each unit according to the operation of the control program Pa will be described. As shown in FIG. 1, when an operator installs a case 7 storing a plurality of wafers 3 on a case base 8 and operates the substrate inspection apparatus 1, the robot of the transfer apparatus 2 </ b> B is controlled by a computer 60. The arm 6 takes out one wafer 3 from the case 7 and places it on the sample stage 4.

Then, holding the wafer 3 in a horizontal state, a drive unit 5 by controlling by a computer 60, among the plurality of measuring points P ₁ to P _n of the focus of the optical microscope 10 is shown in the measurement point data Da The position of the wafer 3 is moved in the Z direction (height direction) and the XY direction (horizontal direction) so as to match one measurement point P. Further, since it is conceivable that the measurement point P is displaced in the height direction due to the warpage of the wafer 3, the final positioning is performed while observing the image of the surface of the wafer 3 with the optical microscope 10 or the Raman spectroscopic optical system 20. This is done by moving the drive unit 5 in the Z direction.

  That is, when positioning in the Z direction using the optical microscope 10, the computer 60 closes the shutters 29 and 46 of the Raman spectroscopic optical system 20 and the ellipsometer optical system 40, and retracts the reflecting mirror 18 to the position indicated by the phantom line. In this state, only the shutter 16 of the optical microscope 10 is opened, the light from the white light source 15 is reflected by the half mirror 13 and illuminates the surface of the wafer 3 through the objective lens 14. Then, light from the surface of the wafer 3 passes through the objective lens 14 and the half mirror 13 and enters the CCD camera 11 through the condenser lens 12, so that the computer 60 can obtain an image at the focal position of the objective lens 14. it can. Then, when the focus of the image obtained by the optical microscope 10 is deviated, the computer 60 controls the drive unit 5 to appropriately move in the Z direction (up and down direction) to adjust the focus position.

The optical axis and focus of the ellipsometer optical system 40 are adjusted in advance so as to be the same as the focus of the optical microscope 10 on the surface of the wafer 3. Therefore, when the focus of the optical microscope 10 is finely adjusted by the alignment operation, the ellipsometer optical system 40 irradiates the polarized light L ₃ to the same measurement point P as that of the optical microscope 10. The physical information in can be obtained.

  When an image (pattern) that can be confirmed by the optical microscope 10 is not obtained on the surface of the wafer 3, the computer 60 closes the shutters 16 and 46 of the optical microscope 10 and the ellipsometer optical system 40, and the reflecting mirror 18 is shown by a solid line. Only the shutter 29 of the Raman spectroscopic optical system 20 is opened, and the laser light from the laser light source 28 is reflected by the reflected light 18 and irradiated onto the surface of the wafer 3 through the objective lens 14. As a result, the Raman light from the surface of the wafer 3 is reflected by the objective lens 14, the reflecting mirror 18, and the beam splitter 32 and is incident on the detector 34. Therefore, when the computer 60 irradiates the surface of the wafer 3 with laser light. The focal position of the objective lens 14 can be determined using the intensity of the light obtained.

  When the wavelengths of light measured by the Raman spectroscopic optical system 20 and the optical microscope 10 are greatly different, it is conceivable that the focal points of the Raman spectroscopic optical system 20 and the optical microscope 10 are slightly shifted only in the Z direction. Therefore, the computer 60 can determine the amount of deviation of the focal position of the Raman spectroscopic optical system 20 from the wavelength range Db1 of the light used in advance determined by the measurement condition data Db. Therefore, the Raman spectroscopic optical system 20 is used. It is possible to correct the focal position by moving the sample stage 4 in the Z direction in the case of performing the conventional measurement and in the case of performing the measurement using the optical microscope 10 and the ellipsometer optical system.

Next, the computer 60 uses the ellipsometer optical system 40 to measure the thickness of the thin film on the surface of the wafer 3. That is, the computer 60 opens only the shutter 46 of the ellipsometer optical system 40 with the optical microscope 10 and the shutters 16 and 29 of the Raman spectroscopic optical system 20 closed, and the light L ₃ polarized from the incident optical system 41 is exposed to the wafer. Control to illuminate 3 surfaces. Then, the polarized light L ₄ reflected by the thin film on the surface of the wafer 3 enters the spectroscope 43 via the detection optical system 42, and the spectral intensity of the split polarized light L ₅ can be detected by the detector 44. At this time, the detector 44 is determined by the integration time Db ₂ included in the measurement condition data Db. Then, the computer 60 can analyze the spectral intensity obtained from the detector 44 and obtain the film thickness of the silicon thin film on the surface of the wafer 3. In addition, the physical quantity calculated | required using the ellipsometer optical system 40 may be not only a film thickness but a refractive index.

Subsequently, the computer 60 uses the Raman spectroscopic optical system 20 to measure the magnitude of stress in the thin film on the surface of the wafer 3. Since the Raman spectroscopic optical system 20 is disposed on the same optical axis L ₁ as the optical microscope 10, the position in the XY direction is surely the same as that of the optical microscope 10. If the wavelengths of light measured by the Raman spectroscopic optical system 20 and the optical microscope 10 are greatly different, it is necessary to correct the Z-direction shift between the focal points of the Raman spectroscopic optical system 20 and the optical microscope 10 at this time.

Then, the computer 60 closes the shutters 16 and 46 of the optical microscope 10 and the ellipsometer optical system 40 and opens only the shutter 29 of the Raman spectroscopic optical system 20 with the reflecting mirror 18 moved to the position indicated by the solid line, and opens the laser. Control is performed so that the laser light from the light source 28 is reflected by the notch filter 27 and the reflecting mirror 18 and is irradiated onto the surface of the wafer 3 through the objective lens 14. The light generated by the surface of the wafer 3 is guided onto the optical axis L ₂ by the objective lens 14 and the reflecting mirror 18, and the Raman scattered light excluding the Rayleigh light passes through the notch filter 27 and passes through various optical systems 23 to 26. Is incident on the spectroscope 21. Then, the spectral intensity of the Raman scattered light dispersed by the spectroscope 21 can be detected by the detector 22.

At this time, the detector 22 is determined by the integration time Db ₂ included in the measurement condition data Db. Then, the computer 60 analyzes the spectrum intensity obtained from the detector 22 and obtains physical quantities such as stress and composition at the measurement point P on the surface of the wafer 3 from the relationship between the Raman spectrum stored in advance and the stress. it can.

  As described above, the substrate inspection apparatus 1 includes the two light sources 28 and 45 for spectroscopic analysis and the light source 15 for one optical microscope. The shutters 16, 29, and 46 are provided in the respective light emitting portions. Since the other shutters are closed at the time of measurement, the light from the light source of another optical system can be prevented from adversely affecting the measurement result.

Next, the physical quantity obtained by using the Raman spectroscopic optical system 20 and the ellipsometer optical system 40 is output according to the operation determined by the inspection result output program Pb. That is, the measured values of the physical quantities obtained by inspecting the measurement points P _{1 to} P _n on the surface of each wafer 3 are displayed on the screen in a predetermined output layout as the output pattern Dc ₁ of the inspection result output condition data Dc. or, it recorded as storage data D ₂ of the test results. In addition, when an upper limit or a lower limit is set for each physical quantity as the output pattern Dc ₁ , when a wafer 3 exceeding this range is generated, a warning alarm or the like is output to notify the operator of the abnormality. Is possible.

In the above-described example, an example of n measurement points P _{1 to} P _n scattered in the two-dimensional direction in the measurement point data Da is given, and thereby a rough distribution of each physical quantity on almost the entire surface of the wafer 3 is known. And the time required for the inspection can be shortened. However, the present invention is not limited to this point, and the measurement target area may be defined in the measurement point data Da. In this case, the stress and film thickness on the surface of the wafer 3 can be mapped by moving the driving unit 5 at a predetermined interval.

  In the first embodiment, the optical fiber 53 is used as the light incident method to the spectroscope 43 of the ellipsometer optical system 40, but this can also be applied to the Raman spectroscopic optical system 20. On the other hand, as a light incident method to the ellipsometer spectroscope 43, it is also possible to directly enter light from the pinhole 57 into the spectroscope 43 without using the optical fiber 53.

  In the first embodiment described above, stress is described as information obtained from the analysis of the Raman spectroscopic spectrum by the Raman spectroscopic optical system 20, but the present invention is not limited to this point. That is, by storing information on the physical quantity such as the structure / composition of the substrate or the electrical properties with respect to the shift amount and intensity of the Raman spectral spectrum in the computer 60, the Raman spectroscopic optical system 20 is not limited to the stress. It can also be used to measure physical quantities such as composition or electrical properties.

Further, when a finely processed shape is applied, such as when an electronic circuit is formed on the wafer 3, the measurement point data Da includes not only the coordinates of the measurement points P _{1 to} P _n but also the accurate values. It is also possible to record a recognition image for specifying the measurement point P.

FIG. 3 is a diagram illustrating an example in which a specific position on the surface of a substrate on which a finely processed shape is applied is defined as a measurement point. In FIG. 3, I is an image (recognition image) of the surface of the wafer 3 on which a circuit pattern observed using the optical microscope 10 is formed. This recognition image I is measured at each measurement point P _{1 to} P _n. The data Da is stored in the computer 60.

The recognition image I is determined for each of the measurement points P _{1 to} P _n using an image obtained by observing the surface of the first wafer 3 in order to set the measurement points P _{1 to} P _n. . That is, when setting the measurement points P _{1 to} P _n , the surface of the wafer 3 is observed using the optical microscope 10 and displayed on the screen of the computer 60 or the like. Next, the drive unit 5 is operated using the computer 60 so that the operator adjusts the measurement points P _{1 to} P _n while viewing this screen. When the operator determines the measurement points P _{1 to} P _n , the computer 60 stores the coordinates of the measurement points P _{1 to} P _n and the image captured by the optical microscope 10 as the measurement point data Da.

Next, when inspecting the second and subsequent wafers 3 on which the same circuit pattern is formed, the transfer device 2B places the wafer 3 on the sample stage 4 by the computer 60 and is stored as the measurement point data Da. One measurement point P is sequentially selected from the coordinates of the respective measurement points P _{1 to} P _n , and the drive unit 5 is controlled in accordance with the coordinates, and then the image observed using the optical microscope 10 is measured. Compared with the recognition image I stored as the point data Da, the measurement point P can be finely adjusted by controlling the drive unit 5.

As in the first embodiment, by recording an image observed using the optical microscope 10 at each of the measurement points P _{1 to} P _n as the identification image I, the position of the wafer 3 on the sample stage 4 may be shifted. Even if it exists, the said control program Pa can determine the predetermined part of the circuit pattern formed at the time of measurement as the measurement point P, and can measure the relationship between the stress and film thickness of this part exactly. In other words, it is possible to comprehensively measure the occurrence of partial stress caused by forming a circuit pattern and the film thickness in the part where this stress is generated, so focus on the main part. In addition, the wafer 3 can be inspected, and the reliability of the inspection is improved accordingly.

  FIG. 4 is a diagram showing the configuration of the main part of the substrate inspection apparatus 1A according to the second embodiment of the present invention. In the substrate inspection apparatus 1A of the second embodiment, a plurality of laser light sources 28a, 28b, 28c,..., 28n having different wavelengths are installed in the Raman spectroscopic optical system 20 as excitation light sources for Raman spectroscopic measurement. Specifically, Ar lasers 28a, 28b, 28c,... Set to wavelengths 514 nm, 488 nm, 310 nm,..., And a He-Cd ion laser 28n set to ultraviolet light having a wavelength of 325 nm are used. The laser light sources 28a, 28b, 28c,..., 28n are opposed to the oscillating portions, and one of the laser beams having different wavelengths is selected, and the selected laser light is applied to the wafer 3 to be measured. Position moving optical path switching mirrors 61a, 61b, 61c,..., 61n for guiding are installed.

  The Raman spectroscopic optical system 20 includes a condenser lens 23 for adjusting Raman light incident on the spectroscope 21, a pinhole 24, a collimator lens 25, and a condenser for guiding the collected light to the spectroscope 21. In addition to the optical lens 26, there is an optical filter (bandpass filter) 62a that cuts light of a wavelength other than the excitation light emitted from the laser light selected from the laser light sources 28a, 28b, 28c,. A disk 62 attached and rotated by a stepping motor 63, a condensing lens 64, a laser light shutter 65 for blocking the laser light, a collimator lens 66 for making the laser light collimated, and the laser light on the wafer 3 An optical filter 67a that guides and then cuts Rayleigh light is attached and rotated by a stepping motor 68. Selectively automatically switchable laser light selection device the laser light applied to the measurement point P of the wafer 3 are provided.

In Raman spectroscopic analysis, ultraviolet light having a wavelength of 325 nm may be used as excitation light. Therefore, an autofocus mechanism using an image obtained from light incident on the CCD camera 11 by the condenser lens 12 may have different focal points. Considering a certain point, the Rayleigh light intensity is detected through the beam splitter 69 and the condenser lens 70 arranged on the same optical axis L ₁ as the optical microscope 10 so that the value of the detected Rayleigh light intensity becomes the maximum value. A focus detection detector 71 for adjusting the focal position is provided by controlling the movement of the driving unit 5 of the sample stage 4 in the Z direction (vertical direction).

  Further, in the substrate inspection apparatus 1A according to the second embodiment, a data calibration sample 72 is installed in the vicinity of the periphery of the sample stage 4 close to the wafer 3 to be measured. As the data calibration sample 72, an NIST sample such as an NIST sample is known in advance for an ellipsometer, a single crystal silicon without a film or a strained silicon whose stress and composition is known in advance for Raman spectroscopy. It is desirable to use one or a plurality of those cut into tens of mm squares (shown as four arranged in the drawing), but the number and type of installation can be arbitrarily selected.

  In addition, since the other structure in the board | substrate inspection apparatus 1A which concerns on 2nd Example is the same as what was demonstrated in 1st Example, it attaches | subjects the same code | symbol to an applicable part and an applicable site | part, respectively, and those details Description is omitted.

  According to the substrate inspection apparatus 1A according to the second embodiment described above, both the film thickness and the refractive index by the ellipsometer optical system 40 and the stress and the composition in the same minute region by the Raman spectroscopic optical system 20 are both measured with high accuracy. In addition to the same effects as the substrate inspection apparatus 1 according to the first embodiment, such as being able to display and output them at the same time, when measuring stress and composition by the Raman spectroscopic optical system 20, their depth direction distributions Can also be measured easily.

  For example, as shown in FIG. 5, a silicon wafer 3 formed by laminating a strained silicon layer 3a of several nanometers to several tens of nanometers, a SiGe layer 3b of several tens of nanometers to several hundred nanometers, and a single crystal silicon substrate 3c in order from the surface is measured. In the case of the object, by selecting an Ar laser 28a having a large penetration depth (λ = 514 nm) of 760 nm and irradiating the measurement point P with laser light, as shown in FIG. 6, in the SiGe layer 3b While the Raman spectrum due to the Si-Si band of the uppermost layer can be detected with high intensity, the Raman spectrum of the Si-Si band in the uppermost strained silicon layer 3a is the Si-Si band of the single crystal silicon substrate 3c. Detection is difficult due to the influence of the Raman spectrum.

  Therefore, the uppermost strained silicon layer 3a is selected by selecting a He-Cd ion laser 28n having a wavelength of about 10 nm (λ = 325 nm) and irradiating the measurement point P with ultraviolet light by a laser light selection device. Only the Raman spectrum of can be measured. In this case, if laser light having an extremely small penetration depth is used, the excitation light does not reach the SiGe layer 3b, and it may be impossible to measure the Raman spectrum of the SiGe layer 3b. Although depending on the thickness of the upper layer 3a, it is necessary to select a laser beam having a wavelength that reaches the SiGe layer 3b because the influence of the substrate 3c is relatively difficult to occur.

  Thus, by selectively and automatically switching and irradiating laser beams having different wavelengths according to the laminated structure of the measurement target substrate, the thickness of the uppermost strained silicon layer 3a, etc., the stress of the measurement target wafer 3 The spectrum can be reliably detected in a state where the distribution in the depth direction (film thickness direction) of the composition is simple and less influenced by the substrate 3c, and as a result, it is widely used in the manufacture of semiconductor substrates in recent years. Even when a semiconductor substrate using strained silicon is used as a measurement target, various physical quantities such as the internal stress of the strained silicon layer 3a and the composition of the SiGe layer 3b as an underlayer are reliably measured. Highly accurate substrate inspection can be performed.

  In addition, in a substrate inspection apparatus used by being incorporated in a semiconductor production line, reproducibility that a stable measurement result can be obtained in the long term is required. In particular, for stress measurement of silicon-based materials by Raman spectroscopy, high-accuracy measurement of about 0.01 / cm is required, but in order to maintain the reproducibility of such high-accuracy measurement over a long period of time, measurement is required. Careful attention must be paid to temperature control of the target sample (wafer), control of fluctuations in the optical system accompanying fluctuations in the ambient environment temperature, ensuring the performance of the optical filter, and the like.

  The substrate inspection apparatus 1A according to the second embodiment takes into account the above-mentioned points of attention, and the wafer 3 is placed on the sample table 4 before or after the predetermined measurement for the wafer 3 to be measured or by the robot arm 6. As shown in FIG. 7, the drive unit 5 is moved in the horizontal direction (X) so that the data calibration sample 72 placed near the periphery of the sample table 4 becomes the measurement point P as shown in FIG. , Y direction) and height direction (Z direction).

  Then, the film thickness and / or refractive index of the data calibration sample 72 is measured using the ellipsometer optical system 40, and the stress and / or composition of the data calibration sample 72 is measured using the Raman spectroscopic optical system 20, By calibrating the measurement value of the wafer 3 to be measured with reference to these measurement values, the wavelength shift due to optical system fluctuations such as deterioration of the optical filter due to fluctuations in the ambient environment temperature and distortion of optical components, Even if there is a shift in the peak shift of the Raman spectrum due to the temperature effect of the measurement target wafer 3 itself, various physical quantities such as stress, composition, film thickness, refractive index, etc. are accurately measured regardless of fluctuations in the ambient environment temperature, Substrate inspection accuracy can be maintained with good reproducibility.

  FIG. 8 is a diagram showing the configuration of the main part of the substrate inspection apparatus 1B according to the third embodiment of the present invention. The substrate inspection apparatus 1B according to the third embodiment removes the ellipsometer optical system 40 from the substrate inspection apparatus 1 according to the first embodiment and the substrate inspection apparatus 1A according to the second embodiment, and operates with the Raman spectroscopic optical system 20. As in the case of the second embodiment, the Raman spectroscopic optical system 20 includes a plurality of laser light sources 28a having different wavelengths as excitation light sources for Raman spectroscopic measurement. 28b, 28c,..., 28n, and a data calibration sample 72 is installed in the vicinity of the periphery of the sample table 4 close to the wafer 3 to be measured. Since other configurations in the Raman spectroscopic optical system 20 are the same as those in the second embodiment, the same reference numerals are given to the corresponding portions and the corresponding portions, and detailed descriptions thereof are omitted.

  According to the substrate inspection apparatus 1B according to the third embodiment, a plurality of laser light sources 28a, 28b, 28c,..., 28n are transferred from the plurality of laser light sources 28a, 28b, 28c,. By selectively and automatically switching and irradiating laser beams having different wavelengths, the stress in the measurement target wafer 3 and the distribution of the composition in the depth direction (film thickness direction) can be easily and hardly affected by the substrate. Even when a semiconductor substrate using strained silicon, which is widely used in the manufacture of semiconductor substrates in recent years, can be measured, the internal stress of the strained silicon layer, Not only can various physical quantities such as the composition of the SiGe layer, which is the ground layer, be reliably measured to perform high-accuracy substrate inspection, but also the stress of the data calibration sample 72 using the Raman spectroscopic optical system 20 and Or, by measuring the composition at any time and calibrating the measurement value of the measurement target wafer 3 based on these measurement values, the stress and the composition of the measurement target wafer 3 can be accurately measured regardless of the ambient temperature fluctuation. As a result, the substrate inspection accuracy can be improved and the long-term reproducibility can be achieved.

  When single crystal silicon is used as the data calibration sample 72, the relationship between the temperature of the single crystal Raman spectrum and the peak shift and the relationship between the temperature of the data calibration sample 72 and the temperature of the measurement target sample (wafer) 3 are as follows. What is necessary is just to measure accurately in advance. In addition, the spectrum half-value width and spectrum peak intensity when the data calibration sample 72 is measured by the Raman spectroscopic optical system 20 in a normal state are used as a reference, and the spectrum obtained when the data calibration sample 72 is measured as needed. It is possible to determine normality / abnormality of the Raman spectroscopic optical system 20 by comparing the half width and the spectral peak intensity value. In particular, intensity fluctuations are often caused by optical filter degradation, optical axis misalignment, fluctuations in output power from the laser light source, etc. Identification can be performed easily.

  Alternatively, a temperature meter may be attached to the data calibration sample 72 itself, and the temperature change of the data calibration sample 72 may be directly measured. In this case, fluctuations in the ambient environment temperature can be immediately detected and effectively used for calibration of the measurement value of the measurement target wafer 3.

1, 1A, 1B Substrate inspection device 2B Transfer device 3 Wafer (sample to be measured)
4 Sample stage 10 Optical microscope 20 Raman spectroscopic optical system 28, 28 a, 28 b,..., 28 n Laser light source 40 Ellipsometer optical system 60 Arithmetic processing unit 72 Data calibration sample D ₁ Inspection recipe data Da Measurement point data Db Measurement condition data Dc output Condition data I Recognition image L ₃ Polarized light P, P _{1 to} P _n Measurement points X, Y Horizontal direction Z Height direction

Claims (9)

  A sample stage configured to be movable, a transport device for transporting the measurement target sample onto the sample stage, an optical microscope for observing the measurement point of the measurement target sample on the sample stage, and a multi-wavelength polarized light at the measurement point. Ellipsometer optical system for irradiating the measured light and outputting information on the measurement object, Raman spectroscopic optical system for irradiating the measurement point of the optical microscope with laser light and outputting other information on the measurement object, and obtained information And a processing unit that analyzes and outputs stress or composition in addition to the film thickness or refractive index at the measurement point.   A sample stage configured to be movable, a transport device for transporting the measurement target sample onto the sample stage, an optical microscope for observing the measurement point of the measurement target sample on the sample stage, and a multi-wavelength polarized light at the measurement point. Ellipsometer optical system for irradiating the measured light and outputting information on the measurement object, Raman spectroscopic optical system for irradiating the measurement point of the optical microscope with laser light and outputting other information on the measurement object, and obtained information And an arithmetic processing unit that analyzes and outputs stress or composition in addition to the film thickness or refractive index at the measurement point, and the Raman spectroscopic optical system includes a plurality of laser light sources having different wavelengths and a plurality of these laser light sources. A substrate inspection apparatus provided with a laser light selection device capable of automatically and selectively switching laser light irradiated from a laser light source to a measurement point of a sample to be measured.   A calibration sample is installed at a position near the sample to be measured on the sample stage, and the ellipsometer optical system and the Raman system are based on information obtained by measuring the calibration sample with the ellipsometer optical system and the Raman spectroscopic optical system as needed. The substrate inspection apparatus according to claim 1, wherein information relating to the measurement target sample output from the spectroscopic optical system can be calibrated.   After adjusting the position of the sample stage in the height direction while checking the position of the focal point using the image observed with an optical microscope or the intensity of the light obtained when the sample to be measured is irradiated with laser light, the ellipsometer The board | substrate inspection apparatus in any one of Claims 1-3 comprised so that a measurement might be performed using an optical system and a Raman spectroscopy optical system.   Measurement conditions including information indicating the coordinates of the position of the measurement point in the sample to be measured, the wavelength range of light used in the Raman spectroscopic optical system and the ellipsometer optical system, the integration time at the time of detection, and the calibration curve used. And an inspection recipe data including an inspection result output condition indicating an output pattern of an inspection result, and an automatic inspection function for sequentially performing the same inspection on a plurality of measurement target samples according to the inspection recipe data. 5. The board inspection apparatus according to any one of 4 above.   The arithmetic processing unit has a recognition image composed of an image observed by the optical microscope of the measurement point in the measurement target sample as data indicating the position of the measurement point of the inspection recipe data, and the surface of the measurement target sample is observed by the optical microscope 6. The measurement is performed using an ellipsometer optical system and a Raman spectroscopic optical system after the sample stage is moved in the plane direction and the plane position of the measurement point is adjusted by comparing the image with the recognition image. The board inspection apparatus according to 1.   A sample stage configured to be movable, a transport device for transporting the measurement target sample onto the sample stage, an optical microscope for observing the measurement point of the measurement target sample on the sample stage, and a laser beam at the measurement point of the optical microscope A substrate comprising: a Raman spectroscopic optical system that emits another information on a measurement object by irradiating and an arithmetic processing unit that analyzes and outputs stress or distortion at a measurement point using the obtained information Inspection device.   A sample stage configured to be movable, a transport device for transporting the measurement target sample onto the sample stage, an optical microscope for observing the measurement point of the measurement target sample on the sample stage, and a laser beam at the measurement point of the optical microscope A Raman spectroscopic optical system that outputs information on the sample to be measured by irradiating the sample, and an arithmetic processing unit that analyzes and outputs stress or distortion at the measurement point using the obtained information, and the Raman spectroscopic optical system Is provided with a plurality of laser light sources having different wavelengths and a laser light selection device capable of automatically and automatically switching the laser light irradiated from the plurality of laser light sources to the measurement point of the measurement target sample. Board inspection equipment.   A measurement sample output from the Raman spectroscopic optical system based on information obtained by measuring the calibration sample at any time using the Raman spectroscopic optical system. The substrate inspection apparatus according to claim 7 or 8, wherein information on the target sample can be calibrated.