JPH0851248A - Inner resonance surface light emitting shg laser - Google Patents
Inner resonance surface light emitting shg laserInfo
- Publication number
- JPH0851248A JPH0851248A JP18701494A JP18701494A JPH0851248A JP H0851248 A JPH0851248 A JP H0851248A JP 18701494 A JP18701494 A JP 18701494A JP 18701494 A JP18701494 A JP 18701494A JP H0851248 A JPH0851248 A JP H0851248A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- multilayer film
- semiconductor substrate
- gaas
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
- H01S5/0605—Self doubling, e.g. lasing and frequency doubling by the same active medium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体材料を用いたＳ
ＨＧ（Second Harmonic Generation）素子、およびそれ
を用いた青色から紫外光発生光源に関する。BACKGROUND OF THE INVENTION The present invention relates to S using a semiconductor material.
The present invention relates to an HG (Second Harmonic Generation) element and a blue to ultraviolet light source using the same.
【０００２】[0002]
【従来の技術】近年、小型軽量の青色から紫外光を発生
可能なコヒーレント光源への需要は極めて大きいものが
ある。その理由は、例えば、前記光源が実用化される
と、従来の長波長光源を用いた光記録再生装置に対し
て、情報の記録密度を３から８倍高密度化できるからで
ある。2. Description of the Related Art In recent years, there is a great demand for a compact and lightweight coherent light source capable of generating blue to ultraviolet light. The reason is that, for example, when the light source is put into practical use, the information recording density can be increased 3 to 8 times higher than that of the conventional optical recording / reproducing apparatus using a long wavelength light source.
【０００３】これを実現する方法として、（１）II−VI
族の半導体を用いた半導体レーザ、（２）ＧａＮ，Ｉｎ
ＧａＮ，ＡｌＧａＮ系のワイドギャップのIII−Ｖ 族半
導体を用いた半導体レーザ、（３）強誘電体材料中に、
擬似位相整合を実現するための分極反転格子と光導波路
を形成したＳＨＧレーザが研究されている。As a method for realizing this, (1) II-VI
Laser using a group III semiconductor, (2) GaN, In
A semiconductor laser using a wide-gap III-V group semiconductor of GaN or AlGaN, (3) in a ferroelectric material,
Research has been conducted on SHG lasers having a polarization inversion grating and an optical waveguide for realizing quasi phase matching.
【０００４】このうち、第１のII−VI族の半導体を用い
た半導体レーザでは、すでに４９０−５２０ｎｍの波長
の室温連続発振が実現され、最も有望なアプローチであ
るが、寿命が数秒から数十秒の段階であり、実用化に至
るにはなお時間を要すると予想される。また、第２のア
プローチでは、現在、数ｍＷの出力を有する発光ダイオ
ードが商品化されており、室温連続発振も時間の問題と
考えられているが、なお未知数である。第３のアプロー
チでは、既に半導体レーザを基本波として１０ｍＷ以上
の青色光が得られており、実用化の一番手であるが、光
源が大型になることや、コストの面から、民生対応の光
情報記録再生装置に搭載することは難しいと考えられ
る。Of these, the semiconductor laser using the first II-VI group semiconductor has already realized room temperature continuous oscillation at a wavelength of 490 to 520 nm, which is the most promising approach, but has a life span of several seconds to several tens. This is in seconds, and it is expected that it will take some time before it is put into practical use. Further, in the second approach, a light emitting diode having an output of several mW is currently commercialized, and room temperature continuous oscillation is considered to be a problem of time, but it is still unknown. In the third approach, blue light of 10 mW or more has already been obtained using a semiconductor laser as a fundamental wave, and it is the first practical application, but it is a light source for consumer use due to the large size of the light source and cost. It is considered difficult to mount it on an information recording / reproducing apparatus.
【０００５】また、これらのアプローチでは、波長４０
０ｎｍ以下の紫外光、なかんずく波長３００ｎｍ以下の
紫外光を発生させることは極めて困難である。In addition, in these approaches, a wavelength of 40
It is extremely difficult to generate ultraviolet light having a wavelength of 0 nm or less, especially ultraviolet light having a wavelength of 300 nm or less.
【０００６】これらに対し、例えば、エレクトロニクス
・レターズ，２６巻，２５号の2088から２０８９頁（El
ectronics Letters, Vol. 26, No.25, pp.2088-2089, 1
990)に記載されているように、半導体を用いたＳＨＧ素
子が検討されている。この従来例では図２のように、Ｇ
ａＡｓ（１００）基板１上に、Ａｌ0.9Ｇａ0.1Ａｓ／Ａ
ｌ0.7Ｇａ0.3Ａｓの多層膜２１を、ＡｌＧａＡｓバッフ
ァ層２２を介して形成し、多層膜の両端から、波長１.
０６μｍ の基本波２３をファイバ２４を用いて、対向
する方向へ伝搬させ、それらとは垂直な方向にＳＨ波２
５を取り出す構造が提案された。On the other hand, for example, Electronics Letters, Vol. 26, No. 25, pages 2088 to 2089 (El
ectronics Letters, Vol. 26, No.25, pp.2088-2089, 1
990), an SHG element using a semiconductor is being studied. In this conventional example, as shown in FIG.
Al 0.9 Ga 0.1 As / A on aAs (100) substrate 1
A multilayer film 21 of 0.7 Ga 0.3 As is formed via an AlGaAs buffer layer 22, and a wavelength of 1.
The fundamental wave 23 of 06 μm is propagated in the opposite direction using the fiber 24, and the SH wave 2 is propagated in the direction perpendicular to them.
A structure for taking out 5 was proposed.
【０００７】この方法では、各多層膜の膜厚がＳＨ波の
半波長となるような構造になっている。これは、基本
波，ＳＨ波両者に対し光導波路となっている多層膜に垂
直な方向には、基本波，ＳＨ波とも定在波になってお
り、これら定在波に対し、擬似位相整合を成立させ、Ｓ
Ｈ波を強めあい、取り出すことを目的としている。この
方式によれば、本来ＡｌＧａＡｓ系の材料では伝搬しな
いはずの、波長５３０ｎｍの光が発生する。In this method, the film thickness of each multilayer film is half the wavelength of the SH wave. This is because both the fundamental wave and the SH wave are standing waves in the direction perpendicular to the multilayer film which is the optical waveguide for both the fundamental wave and the SH wave, and the quasi phase matching is performed for these standing waves. And S
The purpose is to strengthen the H waves and take them out. According to this method, light having a wavelength of 530 nm is generated, which should not propagate in an AlGaAs material.
【０００８】さらに、１９９４年の春季応用物理学会学
術講演会２８ｐ−Ｇ−１４において、上記方法を応用し
て、図３のような誘電体多層膜２、およびＡｌＡｓ／Ｇ
aＡsの多層膜ミラー３１の中に、各多層膜の膜厚がＳＨ
波の半波長となるような擬似位相整合用のＡｌＡｓ／Ｇ
ａＡｓ多層膜３２を形成し、波長４９０ｎｍの青色光を
得る方式が提案されている。Further, in the 1994 Spring Applied Physics Society Academic Lecture 28p-G-14, the above method was applied to apply the dielectric multilayer film 2 as shown in FIG. 3 and AlAs / G.
The film thickness of each multilayer film is SH in the multilayer film mirror 31 of aAs.
AlAs / G for quasi-phase matching that becomes half the wavelength of the wave
A method has been proposed in which the aAs multilayer film 32 is formed to obtain blue light having a wavelength of 490 nm.
【０００９】[0009]
【発明が解決しようとする課題】しかし、上記従来例に
は以下のような問題がある。すなわち、第１の従来例で
は、図２に示されているように、ＳＨ波が光導波路全面
から出射するため、光を集光することが難しいという問
題がある他、ＳＨ光を発生する光導波路部分の両端面を
コーティングする等の最適設計、および基本波を発生す
る半導体レーザを同一基板上に集積化する等の手段をこ
うじても、大幅な効率向上が望めないという問題があ
る。However, the above-mentioned conventional example has the following problems. That is, in the first conventional example, as shown in FIG. 2, since the SH wave is emitted from the entire surface of the optical waveguide, there is a problem that it is difficult to collect the light, and in addition, an optical wave that generates the SH light is generated. Even if the optimal design such as coating both end surfaces of the waveguide portion and the means for integrating the semiconductor lasers that generate the fundamental wave on the same substrate are taken into consideration, there is a problem that a significant improvement in efficiency cannot be expected.
【００１０】また第２の従来例では、擬似位相整合用多
層膜をはさむミラーの反射率を最適化すれば、規格化効
率が大幅に向上するというメリットがある。しかし、ミ
ラーの反射率が高いと、基本波を効率よく多層膜中へ取
り込むことが難しく、ＳＨＧの絶対効率が基本波パワー
に比例するため、結局、大幅な高効率化は難しい。In the second conventional example, if the reflectance of the mirror sandwiching the quasi-phase matching multilayer film is optimized, the standardization efficiency is significantly improved. However, if the reflectance of the mirror is high, it is difficult to efficiently incorporate the fundamental wave into the multilayer film, and the absolute efficiency of the SHG is proportional to the fundamental wave power.
【００１１】[0011]
【課題を解決するための手段】本発明では、以上の問題
を解決するため、以下の手段を採用した。In order to solve the above problems, the present invention employs the following means.
【００１２】まず、半導体基板上に、面発光型の半導体
レーザと、前記面発光型の半導体レーザヘ反射光を照射
し、かつ前記面発光型レーザをはさむように配置された
ミラーと、前記ミラーの間にＳＨ（第２高調波）光を発
生させしめる多層膜を集積化する。さらに、前記内部共
振型面発光ＳＨＧレーザにおいて、前記ＳＨ光を発生さ
せる多層膜が、ＳＨ光の波長周期で形成する。First, on a semiconductor substrate, a surface-emitting type semiconductor laser, a mirror arranged so as to irradiate the surface-emitting type semiconductor laser with reflected light and sandwiching the surface-emitting type laser, and the mirror In between, a multi-layer film that generates SH (second harmonic) light is integrated. Further, in the internal cavity surface emitting SHG laser, the multilayer film for generating the SH light is formed with the wavelength cycle of the SH light.
【００１３】また、前記ＳＨＧレーザの半導体基板をＧ
ａＡｓ、前記レーザ部を形成する材料をＧａＡｓまたは
ＧａＡｌＡｓ、かつ前記第２高調波を発生させる多層膜
が、ＧａＡｓとＡｌＡｓの多層膜とする。あるいはま
た、前記ＳＨＧレーザの半導体基板をＧａＡｓ、前記レ
ーザ部を形成する材料をＧａＡｓまたはＧａＡｌＡｓ、
かつ前記第２高調波を発生させる多層膜をＧａＡｓとＡ
ｌＡｓ、ないしＧａＡｓとＧａＡｌＡｓ、ないしＧａＡ
ｌＡｓとＡｌＡｓの多層膜とする。あるいはまた前記Ｓ
ＨＧレーザの半導体基板をＧａＡｓ、前記レーザ部を形
成する材料をGaAsまたはＧａＡｌＡｓ、かつ前記第２高
調波を発生させる多層膜を、ＺｎＳｅ，ＺｎＳ，ＺｎＴ
ｅ，ＣｄＴｅ，ＣｄＳ，ＣｄＳｅの複数、あるいはそれ
らの互いに組成の異なる複数の混晶からなる多層膜とす
る。あるいはまた、前記ＳＨＧレーザの半導体基板をＧ
ａＡｓ、前記レーザ部を形成する材料をＺｎＳｅ，Ｚｎ
Ｓ，ＺｎＴｅ，ＣｄＴｅ，ＣｄＳ，ＣｄＳｅないし混
晶、かつ前記第２高調波を発生させる多層膜を、ＺｎＳ
ｅ，ＺｎＳ，ＺｎＴｅ，ＣｄＴｅ，ＣｄＳ，ＣｄＳｅの
複数、あるいはそれらの互いに組成の異なる複数の混晶
からなる多層膜とする。The semiconductor substrate of the SHG laser is G
aAs, the material forming the laser portion is GaAs or GaAlAs, and the multilayer film for generating the second harmonic is a multilayer film of GaAs and AlAs. Alternatively, the semiconductor substrate of the SHG laser is GaAs, the material forming the laser portion is GaAs or GaAlAs,
In addition, the multi-layer film for generating the second harmonic is formed of GaAs and A
lAs, or GaAs and GaAlAs, or GaA
It is a multilayer film of 1As and AlAs. Alternatively, the above S
The semiconductor substrate of the HG laser is GaAs, the material forming the laser portion is GaAs or GaAlAs, and the multilayer film for generating the second harmonic is ZnSe, ZnS, ZnT.
e, CdTe, CdS, CdSe, or a multi-layered film composed of a plurality of mixed crystals having different compositions from each other. Alternatively, the semiconductor substrate of the SHG laser is
aAs, the material forming the laser portion is ZnSe, Zn
S, ZnTe, CdTe, CdS, CdSe or a mixed crystal, and a multi-layered film for generating the second harmonic is formed of ZnS.
e, ZnS, ZnTe, CdTe, CdS, CdSe, or a multi-layer film composed of a plurality of mixed crystals having different compositions from each other.
【００１４】[0014]
【作用】まず半導体基板上に、面発光型の半導体レーザ
と、面発光型の半導体レーザヘ反射光を供給せしめ、か
つ面発光型レーザをはさむように配置されたミラーと、
ミラーの間にＳＨ（第２高調波）光を発生させしめる多
層膜を集積化し、さらに、内部共振型面発光ＳＨＧレー
ザにおいて、ＳＨ光を発生せしめる多層膜が、ＳＨ光の
波長周期で形成することにより、基本波は共振器内に閉
じ込められ、かつすべてＳＨＧ過程に利用可能となり、
高効率のＳＨＧレーザが実現できる。First, on the semiconductor substrate, a surface-emitting type semiconductor laser, a mirror for supplying reflected light to the surface-emitting type semiconductor laser, and a mirror arranged so as to sandwich the surface-emitting type laser,
A multilayer film for generating SH (second harmonic) light is integrated between the mirrors, and further, in the internal cavity surface emitting SHG laser, the multilayer film for generating SH light is formed with the wavelength cycle of SH light. As a result, the fundamental wave is confined in the resonator and can be used for the SHG process.
A highly efficient SHG laser can be realized.
【００１５】また、ＳＨＧレーザの半導体基板をＧａＡ
ｓ、レーザ部を形成する材料をGaAsまたはＧａＡｌＡ
ｓ、かつ第２高調波を発生させる多層膜が、ＧａＡｓと
ＡlＡsの多層膜とする、あるいは、ＳＨＧレーザの半導
体基板をＧａＡｓ、レーザ部を形成する材料をＧａＡｓ
またはＧａＡｌＡｓ、かつ第２高調波を発生させる多層
膜をＧａＡｓとＡｌＡｓ、ないしＧａＡｓとＧａＡｌＡ
ｓ、ないしＧａＡｌＡｓとＡｌＡｓの多層膜とすること
により、特に波長４００−５００ｎｍのＳＨ光を、効率
よく発生できる。Further, the semiconductor substrate of the SHG laser is made of GaA.
s, the material forming the laser section is GaAs or GaAlA
s and the multilayer film for generating the second harmonic is a multilayer film of GaAs and AlAs, or the semiconductor substrate of the SHG laser is GaAs and the material forming the laser portion is GaAs.
Alternatively, GaAlAs and a multilayer film for generating the second harmonic are formed of GaAs and AlAs, or GaAs and GaAlA.
By using s or a multi-layer film of GaAlAs and AlAs, SH light with a wavelength of 400 to 500 nm can be efficiently generated.
【００１６】またＳＨＧレーザの半導体基板をＧａＡ
ｓ、レーザ部を形成する材料をＧaＡsまたはＧａＡｌＡ
ｓ、かつ第２高調波を発生させる多層膜を、ＺｎＳｅ，
ＺｎＳ，ＺｎＴｅ，ＣｄＴｅ，ＣｄＳ，ＣｄＳｅの複
数、あるいはそれらの互いに組成の異なる複数の混晶か
らなる多層膜とすることにより、さらにＳＨ光の吸収を
低減して、一層の高効率化を図ることができる。Further, the semiconductor substrate of the SHG laser is made of GaA.
s, the material forming the laser portion is GaAs or GaAlA
s and a multilayer film that generates the second harmonic is
By making a multilayer film composed of a plurality of ZnS, ZnTe, CdTe, CdS, CdSe or a plurality of mixed crystals having different compositions from each other, further reducing SH light absorption and further improving efficiency. You can
【００１７】あるいはまた、ＳＨＧレーザの半導体基板
をＧａＡｓ、レーザ部を形成する材料をＺｎＳｅ，Ｚｎ
Ｓ，ＺｎＴｅ，ＣｄＴｅ，ＣｄＳ，ＣｄＳｅないし混
晶、かつ第２高調波を発生させる多層膜を、ＺｎＳｅ，
ＺｎＳ，ＺｎＴｅ，ＣｄＴｅ，ＣｄＳ，ＣｄＳｅの複
数、あるいはそれらの互いに組成の異なる複数の混晶か
らなる多層膜とすることにより、波長２５０ｎｍ前後の
紫外光が、効率よく発生できる。Alternatively, the semiconductor substrate of the SHG laser is GaAs, and the material forming the laser portion is ZnSe, Zn.
S, ZnTe, CdTe, CdS, CdSe or a mixed crystal, and a multilayer film for generating a second harmonic are
By using a multilayer film composed of a plurality of ZnS, ZnTe, CdTe, CdS, and CdSe or a plurality of mixed crystals having different compositions, ultraviolet light with a wavelength of about 250 nm can be efficiently generated.
【００１８】[0018]
【実施例】図１は、本発明の一実施例を示す断面図であ
る。１は(３１１)ないし(２１１)面など、（１００）面
から傾いたＧａＡｓ基板、２は誘電体の多層膜反射ミラ
ー、３はｎ型のＺｎＳｅ／ＺｎＳＳｅの多層膜からなる
擬似位相整合ＳＨＧ部、４はＺｎＳＳｅ／ＺｎＣｄＳｅ
のＭＱＷ層から成るレーザ発振部、５はｐ型のZnSe／Ｚ
ｎＳＳｅの多層膜ミラー、６はコンタクト層、７はオー
ミック電極である。1 is a sectional view showing an embodiment of the present invention. Reference numeral 1 is a GaAs substrate inclined from the (100) plane such as the (311) to (211) planes, 2 is a multilayer reflective mirror of a dielectric, and 3 is a quasi-phase matching SHG portion composed of a multilayer film of n-type ZnSe / ZnSSe. 4 is ZnSSe / ZnCdSe
Laser oscillation part consisting of MQW layer of 5 is p-type ZnSe / Z
nSSe multilayer mirror, 6 is a contact layer, and 7 is an ohmic electrode.
【００１９】本内部共振型面発光ＳＨＧレーザは、以下
のように動作する。電極７に電流を注入すると、ＺｎＳ
Ｓｅ／ＺｎＣｄＳｅのＭＱＷ層からなるレーザ部分４で
レーザ発振が起こる。このとき、誘電体の多層膜反射ミ
ラー２、およびｐ型のＺnＳe／ＺｎＳＳｅの多層膜ミラ
ー５の反射率を、レーザ発振波長において高反射率（ほ
ぼ９９.９％ 以上）となるように作製すれば、基本波は
これらのミラーで形成された共振器内に閉じ込められ、
共振器内はきわめて高い光パワー密度となる。The internal cavity surface emitting SHG laser of the present invention operates as follows. When a current is injected into the electrode 7, ZnS
Laser oscillation occurs in the laser portion 4 composed of the MQW layer of Se / ZnCdSe. At this time, the reflectance of the dielectric multilayer reflection mirror 2 and the p-type ZnSe / ZnSSe multilayer mirror 5 should be made so as to be a high reflectance (approximately 99.9% or more) at the laser oscillation wavelength. For example, the fundamental wave is confined in the resonator formed by these mirrors,
The optical power density in the resonator is extremely high.
【００２０】発振波長はＺｎＳＳｅ／ＺｎＣｄＳｅの組
成にもよるが、ほぼ４９０−５３０ｎｍである。従っ
て、ＳＨ光の波長は２４５−２６５ｎｍとなる。この波
長域におけるＺｎＳｅ，ＺｎＳＳｅの吸収率は、１０
4(／cm）にも達するが、本実施例では、擬似位相整合Ｓ
ＨＧ部を構成する多層膜のトータルの膜厚を１μｍ以下
とすることにより、ＳＨ光の損失を抑圧する。このとき
のＺｎＳｅおよびＺnＳＳeの膜厚は、ＳＨ光の波長の半
分に設定されている。The oscillation wavelength is about 490-530 nm, though it depends on the composition of ZnSSe / ZnCdSe. Therefore, the wavelength of SH light is 245-265 nm. The absorption rate of ZnSe and ZnSSe in this wavelength range is 10
Although it reaches 4 (/ cm), in this embodiment, the quasi phase matching S
The loss of SH light is suppressed by setting the total film thickness of the multilayer film forming the HG portion to 1 μm or less. The film thicknesses of ZnSe and ZnSSe at this time are set to half the wavelength of SH light.
【００２１】なお、第２高調波を発生させる多層膜、お
よびレーザ部を構成する材料は、ＺｎＳｅ，ＺｎＳ，Ｚ
ｎＴｅ，ＣｄＴｅ，ＣｄＳ，ＣｄＳｅの複数、あるいは
それらの互いに組成の異なる複数の混晶からなる多層膜
であってもよい。The materials constituting the multilayer film for generating the second harmonic and the laser portion are ZnSe, ZnS, Z.
It may be a multilayer film composed of a plurality of nTe, CdTe, CdS, and CdSe, or a plurality of mixed crystals having different compositions from each other.
【００２２】図１のような構成で、以下のような材料選
択も可能である。すなわち、基板１としてｎ型のＧａＡ
ｓ基板、３の擬似位相整合ＳＨＧ用多層膜としてＧａＡ
ｓとＡｌＡｓの多層膜、４のレーザ部としてＧａＡｓ／
ＧａＡｌＡｓのＭＱＷ、５の多層膜ミラーとしてｐ型の
ＧａＡｓ／ＡｌＡｓ多層膜を用いる。この場合の発振波
長はほぼ７８０−８５０ｎｍが可能であり、出力ＳＨ光
の波長は、３９０−４３０ｎｍの可視紫色領域となる。With the structure shown in FIG. 1, the following materials can be selected. That is, as the substrate 1, n-type GaA is used.
GaS as a multilayer film for quasi phase matching SHG of s substrate 3
s / AlAs multilayer film, GaAs / as the laser part of 4
A p-type GaAs / AlAs multilayer film is used as the GaAlAs MQW, 5 multilayer film mirror. The oscillation wavelength in this case can be approximately 780 to 850 nm, and the wavelength of the output SH light is in the visible purple region of 390 to 430 nm.
【００２３】あるいは、擬似位相整合ＳＨＧ用多層膜３
として、ＺｎＳｅ／ＺｎＳＳｅ多層膜、あるいはＺｎＳ
ｅ，ＺｎＳ，ＺｎＴｅ，ＣｄＴｅ，ＣｄＳ，ＣｄＳｅの
複数、あるいはそれらの互いに組成の異なる複数の混晶
からなる多層膜を用いることも可能である。Alternatively, the quasi-phase matching SHG multilayer film 3
As a ZnSe / ZnSSe multilayer film or ZnS
It is also possible to use a multilayer film composed of a plurality of e, ZnS, ZnTe, CdTe, CdS, and CdSe, or a plurality of mixed crystals having different compositions from each other.
【００２４】図４は、本発明の第２の実施例である。１
はｎ型のＧａＡｓ基板、３は擬似位相整合ＳＨＧ用のｎ
型ＺｎＳｅ／ＺｎＳＳｅ多層膜、４１は基本波のみ透過
し、ＳＨ波を反射するＺｎＳｅ／ＺｎＳＳｅの多層膜ミ
ラー、４２はｎ型ＧａＡｓクラッド層、４３はＧａＡｓ
／ＧａＡｌＡｓのＭＱＷレーザ部、４４はｐ型のGaAs／
ＡｌＡｓ多層膜ミラーである。FIG. 4 shows a second embodiment of the present invention. 1
Is an n-type GaAs substrate, 3 is n for quasi phase matching SHG
Type ZnSe / ZnSSe multilayer film, 41 is a ZnSe / ZnSSe multilayer film mirror that transmits only the fundamental wave and reflects SH waves, 42 is an n-type GaAs cladding layer, and 43 is GaAs
/ GaAlAs MQW laser part, 44 is p-type GaAs /
It is an AlAs multilayer mirror.
【００２５】この場合、ＳＨ光はミラー４１で反射され
るため、吸収率の大きいＧａＡｓ層を透過することがな
く、効率をさらに高めることができる。出力ＳＨ光の波
長は、３９０−４３０ｎｍの可視紫色領域となる。な
お、第２高調波を発生させる多層膜は、ＺｎＳｅ，Ｚｎ
Ｓ，ＺｎＴｅ，ＣｄＴｅ，ＣｄＳ，ＣｄＳｅの複数、あ
るいはそれらの互いに組成の異なる複数の混晶からなる
多層膜であってもよい。In this case, since the SH light is reflected by the mirror 41, it does not pass through the GaAs layer having a high absorptance, and the efficiency can be further enhanced. The wavelength of the output SH light is in the visible purple region of 390 to 430 nm. The multilayer film that generates the second harmonic is made of ZnSe, Zn
It may be a multi-layer film composed of a plurality of S, ZnTe, CdTe, CdS, and CdSe, or a plurality of mixed crystals having different compositions.
【００２６】[0026]
【発明の効果】本発明によれば、小型でかつ半導体基板
上のレーザとモノリシックに集積化されたＳＨＧ素子を
構成でき、かつ通常の半導体レーザでは発振の困難な波
長250ｎｍ帯の紫外光から波長４００ｎｍの可視紫光
の、短波長コヒーレント光源が実現できる。According to the present invention, it is possible to construct a compact SHG element monolithically integrated with a laser on a semiconductor substrate, and it is difficult to oscillate with an ordinary semiconductor laser. A short-wavelength coherent light source of 400 nm visible violet light can be realized.
【図１】本発明の第１の実施例を示す断面図。FIG. 1 is a sectional view showing a first embodiment of the present invention.
【図２】従来の表面放射型ＳＨＧ素子を示す説明図。FIG. 2 is an explanatory view showing a conventional surface emitting SHG element.
【図３】従来の多層膜共振型ＳＨＧ素子を示す断面図。FIG. 3 is a sectional view showing a conventional multilayer resonant SHG element.
【図４】本発明の第２の実施例を示す断面図。FIG. 4 is a sectional view showing a second embodiment of the present invention.
１…ＧａＡｓ基板、２…誘電体多層膜ミラー、３…擬似
位相整合ＳＨＧ部、４…ＭＱＷレーザ部、５…多層膜ミ
ラー、６…コンタクト層、７…オーミック電極、８…基
本波、９…ＳＨ波。DESCRIPTION OF SYMBOLS 1 ... GaAs substrate, 2 ... Dielectric multilayer mirror, 3 ... Quasi phase matching SHG part, 4 ... MQW laser part, 5 ... Multilayer film mirror, 6 ... Contact layer, 7 ... Ohmic electrode, 8 ... Fundamental wave, 9 ... SH wave.
Claims (6)
れた面発光型の半導体レーザと、前記半導体レーザヘ反
射光を照射し、前記半導体レーザをはさむように配置さ
れたミラーとからなるレーザ装置において、前記ミラー
の間に第２高調波光を発生させる多層膜が形成されてい
ることを特徴とする内部共振型面発光ＳＨＧレーザ。1. A laser device comprising a semiconductor substrate, a surface-emitting semiconductor laser formed on the semiconductor substrate, and a mirror arranged so as to sandwich the semiconductor laser by irradiating the semiconductor laser with reflected light. 2. An internal cavity surface emitting SHG laser, wherein a multilayer film for generating second harmonic light is formed between the mirrors.
生させる多層膜が、前記第２高調波光の波長周期で形成
されている内部共振型面発光ＳＨＧレーザ。2. The internal cavity surface emitting SHG laser according to claim 1, wherein the multilayer film for generating the second harmonic light is formed with a wavelength cycle of the second harmonic light.
板がＧａＡｓであり、前記レーザ部を形成する材料がＧ
ａＡｓまたはＧａＡｌＡｓであり、前記第２高調波を発
生させる多層膜が、ＧａＡｓとＡｌＡｓからなる内部共
振型面発光ＳＨＧレーザ。3. The semiconductor substrate according to claim 1, wherein the semiconductor substrate is GaAs, and the material forming the laser portion is G.
An internal resonance surface emitting SHG laser which is aAs or GaAlAs and in which the multilayer film for generating the second harmonic is made of GaAs and AlAs.
板がＧａＡｓであり、前記レーザ部を形成する材料がＧ
ａＡｓまたはＧａＡｌＡｓであり、前記第２高調波を発
生させる多層膜が、ＧａＡｓとＡｌＡｓ、ないしＧａＡ
ｓとＧａＡｌＡｓ、ないしＧａＡｌＡｓとＡｌＡｓから
なる内部共振型面発光ＳＨＧレーザ。4. The semiconductor substrate according to claim 1, wherein the semiconductor substrate is GaAs, and the material forming the laser portion is G.
The multilayer film that is aAs or GaAlAs and that generates the second harmonic is GaAs and AlAs or GaA.
An internal cavity surface emitting SHG laser comprising s and GaAlAs or GaAlAs and AlAs.
板がＧａＡｓであり、前記レーザ部を形成する材料がＧ
ａＡｓまたはＧａＡｌＡｓであり、前記第２高調波を発
生させる多層膜が、ＺｎＳｅ，ＺｎＳ，ＺｎＴｅ，Ｃｄ
Ｔｅ，ＣｄＳ，ＣｄＳｅの複数、あるいはそれらの互い
に組成の異なる複数の混晶からなる多層膜である内部共
振型面発光ＳＨＧレーザ。5. The semiconductor substrate according to claim 1, wherein the semiconductor substrate is GaAs, and the material forming the laser portion is G.
The multilayer film which is aAs or GaAlAs and generates the second harmonic is ZnSe, ZnS, ZnTe, Cd.
An internal cavity surface emitting SHG laser which is a multilayer film made of a plurality of Te, CdS, CdSe or a plurality of mixed crystals having different compositions.
板がＧａＡｓであり、前記レーザ部を形成する材料がＺ
ｎＳｅ，ＺｎＳ，ＺｎＴｅ，ＣｄＴｅ，ＣｄＳ，ＣｄＳ
ｅないし混晶からなり、前記第２高調波を発生させる多
層膜が、ＺｎＳｅ，ＺｎＳ，ＺｎＴｅ，ＣｄＴｅ，Ｃｄ
Ｓ，ＣｄＳｅの複数、あるいはそれらの互いに組成の異
なる複数の混晶からなる多層膜である内部共振型面発光
ＳＨＧレーザ。6. The semiconductor substrate according to claim 1, wherein the semiconductor substrate is GaAs, and the material forming the laser portion is Z.
nSe, ZnS, ZnTe, CdTe, CdS, CdS
The multilayer film made of e or a mixed crystal and generating the second harmonic is made of ZnSe, ZnS, ZnTe, CdTe, Cd.
An internal cavity surface emitting SHG laser, which is a multilayer film made of a plurality of S and CdSe or a plurality of mixed crystals having different compositions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18701494A JPH0851248A (en) | 1994-08-09 | 1994-08-09 | Inner resonance surface light emitting shg laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18701494A JPH0851248A (en) | 1994-08-09 | 1994-08-09 | Inner resonance surface light emitting shg laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0851248A true JPH0851248A (en) | 1996-02-20 |
Family
ID=16198699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18701494A Pending JPH0851248A (en) | 1994-08-09 | 1994-08-09 | Inner resonance surface light emitting shg laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0851248A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998002944A1 (en) * | 1996-07-17 | 1998-01-22 | W.L. Gore & Associates, Inc. | A vertical cavity surface emitting laser with enhanced second harmonic generation and method of making same |
| US5956362A (en) * | 1996-02-27 | 1999-09-21 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device and method of etching |
| US6986693B2 (en) | 2003-03-26 | 2006-01-17 | Lucent Technologies Inc. | Group III-nitride layers with patterned surfaces |
| US7099073B2 (en) | 2002-09-27 | 2006-08-29 | Lucent Technologies Inc. | Optical frequency-converters based on group III-nitrides |
| EP1798991A1 (en) * | 2005-12-13 | 2007-06-20 | Seiko Epson Corporation | Laser light source device and projector including said device |
| US7266257B1 (en) | 2006-07-12 | 2007-09-04 | Lucent Technologies Inc. | Reducing crosstalk in free-space optical communications |
| US7315425B2 (en) | 2004-04-06 | 2008-01-01 | Canon Kabushiki Kaisha | Zoom lens and image projection apparatus having the same |
| JP2008130666A (en) * | 2006-11-17 | 2008-06-05 | Sony Corp | Semiconductor light-emitting device |
| US7733936B2 (en) | 2005-04-28 | 2010-06-08 | Canon Kabushiki Kaisha | Surface emitting laser |
| US7952109B2 (en) | 2006-07-10 | 2011-05-31 | Alcatel-Lucent Usa Inc. | Light-emitting crystal structures |
-
1994
- 1994-08-09 JP JP18701494A patent/JPH0851248A/en active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5956362A (en) * | 1996-02-27 | 1999-09-21 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device and method of etching |
| WO1998002944A1 (en) * | 1996-07-17 | 1998-01-22 | W.L. Gore & Associates, Inc. | A vertical cavity surface emitting laser with enhanced second harmonic generation and method of making same |
| US5918108A (en) * | 1996-07-17 | 1999-06-29 | W. L. Gore & Associates, Inc | Vertical cavity surface emitting laser with enhanced second harmonic generation and method of making same |
| US7099073B2 (en) | 2002-09-27 | 2006-08-29 | Lucent Technologies Inc. | Optical frequency-converters based on group III-nitrides |
| US6986693B2 (en) | 2003-03-26 | 2006-01-17 | Lucent Technologies Inc. | Group III-nitride layers with patterned surfaces |
| US7084563B2 (en) | 2003-03-26 | 2006-08-01 | Lucent Technologies Inc. | Group III-nitride layers with patterned surfaces |
| USRE47767E1 (en) | 2003-03-26 | 2019-12-17 | Nokia Of America Corporation | Group III-nitride layers with patterned surfaces |
| US8070966B2 (en) | 2003-03-26 | 2011-12-06 | Alcatel Lucent | Group III-nitride layers with patterned surfaces |
| US7315425B2 (en) | 2004-04-06 | 2008-01-01 | Canon Kabushiki Kaisha | Zoom lens and image projection apparatus having the same |
| US7397610B2 (en) | 2004-04-06 | 2008-07-08 | Canon Kabushiki Kaisha | Zoom lens and image projection apparatus having the same |
| US7733936B2 (en) | 2005-04-28 | 2010-06-08 | Canon Kabushiki Kaisha | Surface emitting laser |
| US7796672B2 (en) | 2005-12-13 | 2010-09-14 | Seiko Epson Corporation | Light source device and projector including light source device |
| EP1798991A1 (en) * | 2005-12-13 | 2007-06-20 | Seiko Epson Corporation | Laser light source device and projector including said device |
| US7952109B2 (en) | 2006-07-10 | 2011-05-31 | Alcatel-Lucent Usa Inc. | Light-emitting crystal structures |
| US7266257B1 (en) | 2006-07-12 | 2007-09-04 | Lucent Technologies Inc. | Reducing crosstalk in free-space optical communications |
| JP2008130666A (en) * | 2006-11-17 | 2008-06-05 | Sony Corp | Semiconductor light-emitting device |
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