JPH0851080A - Manufacture of semiconductor device, and deposit removing method and device of reaction chamber - Google Patents

Abstract

PURPOSE:To eliminate troubles caused by particles in a reaction chamber by a method wherein gas is quickly supplied into the reaction chamber to increase it rapidly in inner pressure, and the reaction chamber is made to drop rapidly in inner pressure by exhaustion so as to vary quickly in inner pressure. CONSTITUTION:The outlet valve 44 of a gas supply-side standby chamber 42 is closed, the valves 52, 53, and 54 of a gas exhaust system are opened, and an exhaust pump 55 is actuated. The inlet valve 43 of the gas supply-side standby chamber 42 is opened to fill gas into the gas supply-side standby chamber 42. Then, the inlet valve 43 of the gas supply-side standby chamber 42 is closed, the valves 52, 53, and 54 of the gas exhaust system are closed, then the outlet valve 44 of the gas supply-side standby chamber 42 is opened so as to quickly fill a chamber 1 with gas. The chamber 1 increases quickly in inner pressure, whereby deposits unstably attached to the inner wall of the chamber can be separated off.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device and a method and device for removing deposits adhering to the inside of a reaction chamber such as a CVD device and a dry etching device.

[0002]

2. Description of the Related Art Among semiconductor device manufacturing apparatuses used for manufacturing semiconductor devices, deposits such as ammonium tetrachloride and silicon dioxide are unstable on the inner walls of CVD apparatuses and dry etching apparatuses. Since it adheres easily to the semiconductor wafer and is unstable, it easily peels off and becomes particles of 0.5 to 100 μm and adheres to the semiconductor wafer, causing a short circuit between wirings. The particle generation source is also the sliding part of the machine.

Therefore, efforts have conventionally been made to suppress the generation of particles of 0.5 to 100 μm. For example, the reaction chamber and the exhaust pipe part are mirror-finished by using a composite electropolishing method or the like, or conversely, the surface is roughened so that the adhered matter is difficult to peel off. Further, with respect to the sliding portion of the machine, this portion has been covered with a bellows or made of a material having a small friction coefficient. Furthermore, the slow vent method using a thin pipe, the slow start method of slowly opening the gas supply valve, etc. were also used.

[0004]

However, it is extremely difficult to completely prevent the generation of particles, and it has been desired to develop means for eliminating the harmful effects of particles.

An object of the present invention is to meet this demand, and a method of manufacturing a semiconductor device in which harmful effects due to particles are removed, and a problem that an adhered matter that is unstablely adhered to the inside of a reaction chamber is a problem in an object to be treated. It is an object of the present invention to provide a method and an apparatus for actively peeling and discharging from a reaction chamber without causing

[0006]

Of the above objects, the first
The purpose (method of manufacturing a semiconductor device) is to evacuate the reaction chamber during a standby period in which the object to be processed is not charged, and then rapidly supply gas into the reaction chamber to The internal pressure of the reaction chamber is rapidly increased, the inside of the reaction chamber is evacuated again, and the internal pressure of the reaction chamber is rapidly decreased, and a rapid pressure fluctuation is generated in the internal pressure of the reaction chamber to adhere to the reaction chamber. The step of peeling off the adhered matter that was done, and then
It is achieved by a method of manufacturing a semiconductor device, which comprises a step of loading an object to be processed into the reaction chamber and coating or etching the object to be processed.

Of the above-mentioned purposes, the second purpose (providing a method for removing the deposits in the reaction chamber) is to evacuate the reaction chamber during a standby period in which the object to be treated is not charged, and then to carry out the reaction. Suddenly supplying gas to the chamber to rapidly raise the internal pressure of the reaction chamber, again vacuuming the reaction chamber to rapidly lower the internal pressure of the reaction chamber, causing rapid pressure fluctuations in the internal pressure of the reaction chamber and adhering to the reaction chamber. It is achieved by the method of removing the adhered substances that has been removed and discharged.

In particular, when the rapidly supplied gas has a high temperature of 100 ° C. or higher, the effect of removing the deposit is excellent.

Of the above-mentioned objects, the third object (providing a device for removing deposits of deposits in the reaction chamber) is to evacuate the reaction chamber and rapidly supply gas into the reaction chamber to rapidly increase the internal pressure of the reaction chamber. , The reaction chamber is evacuated, the internal pressure of the reaction chamber is drastically dropped, and the internal pressure of the reaction chamber is rapidly changed to remove the deposits adhering to the reaction chamber and remove the deposits in the reaction chamber. Achieved by the device.

If a means for rapidly supplying a high temperature gas is provided, the effect of removing the deposit can be enhanced.

[0011]

In the method according to the present invention, the internal pressure of the reaction chamber is abruptly fluctuated. Therefore, the pressure fluctuation is utilized to cause unstable adhesion inside the reaction chamber. The kimono can be peeled off and discharged.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method and apparatus for removing deposits in a reaction chamber according to two embodiments of the present invention will be described below with reference to the drawings.

First Embodiment See FIG. 1 FIG. 1 is a conceptual configuration diagram of an apparatus for removing deposits from a reaction chamber according to a first embodiment of the present invention. In the figure, 1 is a reaction chamber, and in this embodiment, a reaction chamber for a plasma CVD apparatus is shown. Reference numeral 2 denotes a gas supplier, which also serves as one of the electrodes in this embodiment. A susceptor 3 supports a semiconductor wafer (not shown) which is an object to be processed. The susceptor 3 also serves as the other electrode in this embodiment. 4 is a gas supply system. 41 is a process gas supply system. 42 is a spare room on the gas supply side, 43.44
Is a valve in the supply side auxiliary chamber. 5 is a gas exhaust system. 51 is a spare chamber on the gas discharge side, 52, 53, 54
Is a valve for a gas exhaust system. 55 is an exhaust pump. In addition to the above, for example, an RF power supply is provided between the one electrode (gas supplier) 2 and the other electrode (susceptor) 3, but the description thereof is omitted.

Next, a method of peeling off the deposits adhering to the inside of the reaction chamber by using this apparatus will be described.

A. It is confirmed that a semiconductor wafer (not shown) which is an object to be processed in the reaction chamber is not loaded.

The process gas supply system 41 is deactivated, the outlet valve 44 of the gas supply side auxiliary chamber is closed, the valves 52, 53, 54 of the gas exhaust system are opened, and the exhaust pump 55 is operated. As a result, the inside of the reaction chamber 1 and the inside of the gas discharge side preliminary chamber 51 are evacuated.

B. The inlet valve 43 of the gas supply side auxiliary chamber 42 is opened to fill the gas supply side auxiliary chamber 42 with gas. Nitrogen gas or the like is used as the gas to be filled, and the filling pressure is, for example, 3 Kg / cm ² .

C. After closing the inlet valve 43 of the gas supply side preliminary chamber and closing the gas discharge system valves 52, 53 and 54, the outlet valve 44 of the gas supply side preliminary chamber is opened to rapidly supply the gas into the reaction chamber 1. To do. The pressure in the reaction chamber 1 is
In accordance with the ratio between the volume of the reaction chamber 1 and the volume of the gas supply side preliminary chamber 42, the volume rapidly rises to, for example, 300 to 500 Torr.

Due to this sudden increase in pressure, the deposits of 0.5 to 100 μm that have been unstablely deposited inside the reaction chamber 1 are peeled off.

D. The outlet valve 44 of the gas supply side preliminary chamber is closed, the gas discharge system valve 53 is opened, and the gas is transferred to the gas discharge side preliminary chamber 51.

E. The internal pressure of the spare chamber 51 on the gas discharge side is 10 To
When the balance is lowered to about rr, the gas exhaust system valve 52
-Open 54 and discharge gas by the exhaust pump 55 to create a vacuum inside the reaction chamber 1 and the inside of the gas discharge side preliminary chamber 51.

By this step, the deposits (particles) of 0.5 to 100 μm, which have been peeled off in the step C, are discharged to the outside of the reaction chamber 1.

In this way, the deposits that are unstablely attached to the reaction chamber 1 are positively separated and discharged to the outside of the reaction chamber 1. It goes without saying that it is effective to repeat this process a plurality of times.

Second Example In the first example, the gas rapidly supplied to the reaction chamber 1 was at room temperature, but if this gas is set to a high temperature gas of 100 ° C. or higher, the effect of peeling off the deposits in the reaction chamber will be improved. improves.

In order to realize this, it is realistic to provide a heating device in the gas supply side auxiliary chamber 42.

[0026]

As described above, according to the method for removing deposits of deposits in the reaction chamber according to the present invention, after the reaction chamber is evacuated during the standby period in which the object to be treated is not charged, gas is introduced into the reaction chamber. Is rapidly supplied to rapidly increase the pressure in the reaction chamber, and the reaction chamber is evacuated again to rapidly decrease the pressure in the reaction chamber. It is possible to effectively remove the deposits that have been unstablely attached to the. Further, the apparatus for removing deposits of deposits in the reaction chamber according to the present invention evacuates the reaction chamber, abruptly supplies gas into the reaction chamber to rapidly increase the pressure in the reaction chamber, and again evacuates the reaction chamber to evacuate the reaction chamber. Since the device is provided with a means for rapidly dropping the pressure, the above method can be effectively performed.

[Brief description of drawings]

FIG. 1 is a conceptual configuration diagram of a reaction chamber deposit removing device used for carrying out a reaction chamber deposit removing method according to an embodiment of the present invention.

[Explanation of symbols]

 1 Reaction Chamber 2 Gas Supply (One Electrode) 3 Susceptor (Other Electrode) 4 Gas Supply System 41 Process Gas Supply System 42 Gas Supply Side Spare Chamber 43/44 Gas Supply Side Spare Chamber Valve 5 Gas Discharge System 51 Gas Discharge side spare chamber 52 ・ 53 ・ 54 Gas discharge system valve 55 Exhaust pump

Claims (5)

[Claims] 1. A vacuum is applied to the reaction chamber during a standby period in which the object to be treated is not charged into the reaction chamber, and then gas is rapidly supplied into the reaction chamber to rapidly increase the internal pressure of the reaction chamber, Again, a step of vacuuming the reaction chamber to rapidly reduce the internal pressure of the reaction chamber, causing a rapid pressure fluctuation in the internal pressure of the reaction chamber to peel off deposits attached to the reaction chamber, and then, A method of manufacturing a semiconductor device, comprising: loading an object to be processed into the reaction chamber, and coating or etching the object to be processed. 2. The inside of the reaction chamber is evacuated during a standby period in which the object to be treated is not charged, and then gas is rapidly supplied into the reaction chamber to rapidly increase the internal pressure of the reaction chamber, Again, the inside of the reaction chamber is evacuated to rapidly reduce the internal pressure of the reaction chamber, and a sudden pressure change is generated in the internal pressure of the reaction chamber to separate and discharge the deposits attached to the reaction chamber. And a method for removing deposits from the reaction chamber. 3. The method for removing deposits from a reaction chamber according to claim 1, wherein a high temperature gas is used as the gas. 4. The reaction chamber is evacuated, gas is rapidly supplied into the reaction chamber to rapidly increase the internal pressure of the reaction chamber, and the reaction chamber is evacuated again to rapidly decrease the internal pressure of the reaction chamber. An apparatus for removing deposits in a reaction chamber, comprising means for stripping and discharging deposits adhering to the inside of the reaction chamber by causing a rapid pressure change in the internal pressure of the reaction chamber. 5. The apparatus for removing deposits from a reaction chamber according to claim 3, wherein the gas is a high temperature gas.