JPH0847148A - Enclosed conductor device - Google Patents

Enclosed conductor device

Info

Publication number
JPH0847148A
JPH0847148A JP6182091A JP18209194A JPH0847148A JP H0847148 A JPH0847148 A JP H0847148A JP 6182091 A JP6182091 A JP 6182091A JP 18209194 A JP18209194 A JP 18209194A JP H0847148 A JPH0847148 A JP H0847148A
Authority
JP
Japan
Prior art keywords
conductor
voltage conductor
shield
insulating spacer
sealed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6182091A
Other languages
Japanese (ja)
Other versions
JP2667640B2 (en
Inventor
Kenji Anno
憲次 安納
Tokio Yamagiwa
時生 山極
Naoaki Takeji
直昭 竹治
Koji Yamaji
幸司 山地
Hiroyuki Irokawa
裕之 色川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electric Power Development Co Ltd
Kansai Electric Power Co Inc
Shikoku Electric Power Co Inc
Hitachi Ltd
Original Assignee
Electric Power Development Co Ltd
Kansai Electric Power Co Inc
Shikoku Electric Power Co Inc
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electric Power Development Co Ltd, Kansai Electric Power Co Inc, Shikoku Electric Power Co Inc, Hitachi Ltd filed Critical Electric Power Development Co Ltd
Priority to JP6182091A priority Critical patent/JP2667640B2/en
Publication of JPH0847148A publication Critical patent/JPH0847148A/en
Application granted granted Critical
Publication of JP2667640B2 publication Critical patent/JP2667640B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02GINSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
    • H02G5/00Installations of bus-bars
    • H02G5/06Totally-enclosed installations, e.g. in metal casings
    • H02G5/063Totally-enclosed installations, e.g. in metal casings filled with oil or gas
    • H02G5/065Particle traps

Abstract

PURPOSE:To provide an enclosed conductor device which can capture conductive foreign matter easily without using an enclosed container of special construction. CONSTITUTION:An inclined shield 6 where the diameter on the insulation spacer 3 side is larger than that on the non-insulation side is mounted around a high voltage conductor 5 disposed inside an enclosed container 1 with the same potential as that of the high voltage conductor 5, and an inclined electrode 9 where the height on the insulation spacer side is larger than that on the non-insulation side is mounted at the bottom part of the enclosed container 1 with the same potential as that of the enclosed container 1. A foreign matter capture part 10 is formed on the non-insulation spacer side of the inclined electrode 9 to guide conductive foreign matter to the foreign matter capture part 10, using the inclination of the inclined shield 6 and the inclined electrode 9.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は絶縁性ガスを封入した密
閉容器内に高電圧導体を配置した密閉導体装置に係り、
特に直流送電用に好適な密閉導体装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a closed conductor device in which a high voltage conductor is arranged in a closed container filled with an insulating gas.
In particular, the present invention relates to a closed conductor device suitable for DC power transmission.

【0002】[0002]

【従来の技術】一般に、この種の密閉導体装置は、絶縁
性ガスを封入した密閉容器のフランジ間に絶縁スペーサ
を固定し、この絶縁スペーサの埋込中心導体へ高電圧導
体を電気的に接続すると共に機械的に支持して、高電圧
導体を密閉容器から電気的に絶縁して構成されている。
2. Description of the Related Art Generally, in this type of closed conductor device, an insulating spacer is fixed between the flanges of a closed container in which an insulating gas is filled, and a high-voltage conductor is electrically connected to a buried center conductor of the insulating spacer. In addition, the high-voltage conductor is electrically insulated from the closed container by mechanical support.

【0003】このような密閉導体装置を直流送電用とし
て用いた場合の大きな問題点は、何等かの原因で密閉容
器内に導電性異物が混入し、この導電性異物のガス空間
における挙動や、絶縁スペーサへの導電性異物の付着に
よって絶縁性能が低下することである。つまり直流送電
用密閉導体装置は、交流機器の場合とは異なり直流電圧
印加状態での電界の方向が一定であるため、密閉容器内
に存在する導電性異物が一旦浮上して絶縁性ガス中に飛
び上がると、そのまま高電圧導体にまで達して導電性異
物は高電圧導体と同じ極性の電荷に帯電され、再び低電
圧側の密閉容器内底面に落下し、接地された密閉容器と
高電圧導体との間で往復運動を繰り返すことになり、特
に高電圧導体の印加電圧が電荷を帯びた導電性異物と逆
極性の場合、導電性異物は高電圧導体の近傍で充放電を
繰り返すことにより発光し、微小振動を伴って高電圧導
体付近で浮遊することがある(以下ファイヤ・フライ現
象と呼ぶ)。また導電性異物が上述した往復運動を繰り
返すうちに絶縁スペーサに付着すると、その絶縁スペー
サの沿面絶縁耐力が大幅に低下してしまう。
A major problem when such a closed conductor device is used for DC power transmission is that a conductive foreign substance enters the closed container for some reason, and the behavior of the conductive foreign substance in a gas space, Insulation performance is degraded due to adhesion of conductive foreign matter to the insulating spacer. In other words, the closed conductor device for DC power transmission has a constant electric field direction when a DC voltage is applied, unlike the case of an AC device. When it jumps up, it reaches the high-voltage conductor as it is and the conductive foreign matter is charged to the same polarity as the high-voltage conductor, falls again on the bottom surface inside the closed container on the low-voltage side, and the grounded sealed container and high-voltage conductor When the voltage applied to the high-voltage conductor has a polarity opposite to that of the charged conductive foreign matter, the conductive foreign matter emits light by repeating charging and discharging in the vicinity of the high-voltage conductor. , May float around high-voltage conductors with small vibrations (hereinafter referred to as fire-fly phenomenon). Further, if the conductive foreign matter adheres to the insulating spacer while repeating the above-mentioned reciprocating motion, the creeping dielectric strength of the insulating spacer is significantly reduced.

【0004】このような導電性異物による絶縁性能の低
下を防止するものとして、例えば電気学会技術報告(II
部)第397号『ガス絶縁開閉装置の直流絶縁』(19
91年12月)の12頁に記載されるように、密閉容器
全体または密閉容器側面に傾斜を付け、直流電界下での
導電性異物の往復運動を利用して、傾斜部における入射
角と反射角の関係から導電性異物を密閉容器底部側に順
次導くようにし、この密閉容器底部に異物捕獲部を形成
した密閉導体装置が知られている。
To prevent the deterioration of the insulation performance due to such conductive foreign matter, for example, the technical report of the Institute of Electrical Engineers of Japan (II
Part 3) No. 397 "DC Insulation of Gas Insulated Switchgear" (19)
As described on page 12 of (December 1991), the entire hermetically sealed container or the side of the hermetically sealed container is inclined, and the reciprocating motion of the conductive foreign matter under a DC electric field is used to make the incident angle and the reflection at the inclined part. There is known a closed conductor device in which conductive foreign matter is sequentially guided to the bottom side of a closed container due to the relationship of angles, and a foreign matter capturing section is formed at the bottom of the closed container.

【0005】[0005]

【発明が解決しようとする課題】しかしながら上述の密
閉導体装置は、傾斜を持たせた特殊な構造の密閉容器を
製作しなければならず、特に、装置全体を小型にするた
めに密閉容器内に封入する絶縁性ガスは所定の圧力にな
されているため、密閉容器は圧力容器となり、その製作
が大変面倒で高価なものとなってしまう。
However, in the above-mentioned closed conductor device, it is necessary to manufacture a closed container having a special structure with an inclination. Since the insulating gas to be filled is at a predetermined pressure, the sealed container becomes a pressure container, and its manufacture is very troublesome and expensive.

【0006】本発明の目的は、特殊な構造の密閉容器を
用いることなく導電性異物を容易に捕獲することができ
る密閉導体装置を提供するにある。
An object of the present invention is to provide a closed conductor device which can easily capture a conductive foreign substance without using a closed container having a special structure.

【0007】[0007]

【課題を解決するための手段】本発明は上述の目的を達
成するために、軸方向端を絶縁スペーサによって封じた
密閉容器内に絶縁性ガスを封入すると共に、上記絶縁ス
ペーサによって上記密閉容器から絶縁して高電圧導体を
支持した密閉導体装置において、上記高電圧導体の少な
くとも下部に位置する部分に、上記絶縁スペーサ側の端
部を反絶縁スペーサ側の端部よりも上記密閉容器に近付
けた傾斜シールドを設け、この傾斜シールドを上記高電
圧導体と同電位にし、上記傾斜シールドの上記反絶縁ス
ペーサ側の端部近傍に異物捕獲部を設けたことを特徴と
する。
In order to achieve the above-mentioned object, the present invention encloses an insulative gas in a hermetically sealed container whose axial end is sealed by an insulating spacer, and at the same time, from the hermetically sealed container by the insulating spacer. In a closed conductor device supporting an insulated high voltage conductor, an end portion on the side of the insulating spacer is closer to the closed container than an end portion on the side of the anti-insulation spacer, at a portion located at least under the high voltage conductor. An inclined shield is provided, the inclined shield is made to have the same potential as the high-voltage conductor, and a foreign matter capturing portion is provided in the vicinity of an end of the inclined shield on the side opposite to the insulating spacer.

【0008】[0008]

【作用】本発明による密閉導体装置は、上述のように高
電圧導体側に傾斜シールドを設けたため、高電圧導体に
直流電圧を印加すると、導電性異物は傾斜シールドと密
閉容器間で往復運動し、このとき傾斜シールドの傾斜面
によって導電性異物は徐々に絶縁スペーサとは反対側の
異物捕獲部に導かれることになり、密閉容器を特殊形状
にすることなく、絶縁スペーサにおける絶縁耐圧の低下
を防止することができる。
In the sealed conductor device according to the present invention, the inclined shield is provided on the high-voltage conductor side as described above. Therefore, when a DC voltage is applied to the high-voltage conductor, the conductive foreign matter reciprocates between the inclined shield and the sealed container. However, at this time, the conductive foreign matter is gradually guided to the foreign matter capturing portion on the opposite side of the insulating spacer by the inclined surface of the inclined shield. Can be prevented.

【0009】[0009]

【実施例】以下、本発明の実施例を図面により説明す
る。
Embodiments of the present invention will be described below with reference to the drawings.

【0010】図1は本発明の一実施例による密閉導体装
置の部分断面斜視図である。
FIG. 1 is a partial sectional perspective view of a sealed conductor device according to one embodiment of the present invention.

【0011】円筒形の密閉容器1の軸方向両端にはそれ
ぞれフランジ2が形成され、隣接する密閉容器1のフラ
ンジ2間にそれぞれ絶縁スペーサ3が介在され、これら
は詳細な図示を省略したボルトによって締め付け固定さ
れている。このようにして形成されたガス区画内には絶
縁性ガスが封入されている。絶縁スペーサ3の中心部に
は埋込中心導体4があり、この埋込中心導体4にチュ−
リップ形接触子等の接続部7を介して軸方向に長尺の導
体が接続されて高電圧導体5が構成されている。この高
電圧導体5の外周部には傾斜シールド6が配置されてお
り、この傾斜シールド6は全体として略筒状であるが、
絶縁スペーサ3に近い側の径が大きく絶縁スペーサ3か
ら遠ざかるにつれて径が小さくなるように製作され、高
電圧導体5と同電位に成されている。この傾斜シールド
6の詳細は、図1の縦断面図である図2に示すように円
周方向に三分割され、それぞれの対向部には内側に丸み
を付けた折り返し部、例えば下側に配置した傾斜シール
ド6Aの左右端には折り返し部6A1,6A2がそれぞ
れ形成されている。
Flanges 2 are formed at both ends in the axial direction of the cylindrical hermetic container 1, respectively, and insulating spacers 3 are interposed between the flanges 2 of the adjacent hermetic containers 1, respectively, which are secured by bolts (not shown). Tightened and fixed. Insulating gas is enclosed in the gas compartment thus formed. An embedded center conductor 4 is provided at the center of the insulating spacer 3, and the embedded center conductor 4 has a tug
A long conductor is connected in the axial direction via a connection portion 7 such as a lip-type contact to form a high-voltage conductor 5. An inclined shield 6 is arranged on the outer peripheral portion of the high-voltage conductor 5, and the inclined shield 6 has a substantially tubular shape as a whole.
It is manufactured so that the diameter on the side close to the insulating spacer 3 is large and the diameter becomes smaller as the distance from the insulating spacer 3 increases, and it is formed at the same potential as the high-voltage conductor 5. The details of the inclined shield 6 are divided into three in the circumferential direction as shown in FIG. 2 which is a vertical cross-sectional view of FIG. 1, and the opposing portions of each of the inclined shields are rounded inside, for example, arranged on the lower side. Folded portions 6A1 and 6A2 are formed at the left and right ends of the inclined shield 6A.

【0012】また図1および図2に示すように、傾斜シ
ールド6Aに対向する位置の密閉容器1側には傾斜電極
9が配置され、この傾斜電極9は絶縁スペーサ3に近い
側が高電圧導体5に近くなるように密閉容器1の内面か
ら距離が大きく絶縁スペーサ3から遠ざかるにつれて高
電圧導体5から遠くなるように密閉容器1の内面に近づ
けられて密閉容器1に固定され、密閉容器1と同じ大地
電位に成されている。この傾斜電極9の斜視図を図4に
示しており、同図から分かるように絶縁スペーサ3に近
い側が密閉容器1の内面から離れているため、溶接ある
いは後述する他の固定方法によって密閉容器1へ固定す
る同側端部の取付け部9Bの近傍に、曲率半径の比較的
大きな曲面で成る電界緩和部9Cを形成することができ
る。傾斜電極9の反絶縁スペーサ側の端部、あるいは同
端部に対応する密閉容器1には、傾斜電極9の高電圧導
体5側表面よりも後退した凹部等を形成して低電界部と
した異物捕獲部10が形成されている。
As shown in FIGS. 1 and 2, an inclined electrode 9 is disposed on the side of the closed vessel 1 at a position facing the inclined shield 6A. The distance from the inner surface of the sealed container 1 is large so as to be closer to the inner surface of the sealed container 1 so as to be farther from the high-voltage conductor 5 as the distance from the insulating spacer 3 is increased. Made to ground potential. A perspective view of this inclined electrode 9 is shown in FIG. 4. As can be seen from the figure, the side close to the insulating spacer 3 is separated from the inner surface of the hermetically sealed container 1, so that the hermetically sealed container 1 is welded or fixed by another fixing method described later. In the vicinity of the mounting portion 9B at the same side end to be fixed, the electric field relaxation portion 9C having a curved surface with a relatively large radius of curvature can be formed. In the closed container 1 corresponding to the end of the inclined electrode 9 on the side opposite to the insulating spacer or the same end, a concave portion or the like which is recessed from the surface of the inclined electrode 9 on the side of the high voltage conductor 5 is formed as a low electric field portion. A foreign matter capturing section 10 is formed.

【0013】図9は上述した傾斜電極9の固定方法を示
す要部拡大断面図である。
FIG. 9 is an enlarged sectional view of a main part showing a method of fixing the above-mentioned inclined electrode 9.

【0014】隣接する密閉容器1のフランジ2間には絶
縁スペーサ3が介在され、これらはボルト23によって
締め付けられている。フランジ2の絶縁スペーサ3側に
おける内側には凹部が形成され、この凹部内に傾斜電極
9の端部である取付け部9Bを位置させてボルト24に
よって固定している。傾斜電極9は絶縁スペーサ3の凹
部への取付けに合致するよう階段状にしているが、密閉
容器1の内面へ溶接あるいはボルトで固定することもで
きるので形状は限定されず、また取付け部9Bと電界緩
和部9Cまでを全体的に滑らかな曲面とすることもでき
る。このような傾斜電極9は、予め密閉容器1に取り付
けておくことができるため、同部における導電性異物の
混入を抑えることができる。またボルト24と絶縁スペ
ーサ3にできる間隔L3、傾斜電極9の電界緩和部9C
と絶縁スペーサ3の間隔L4、傾斜シールドの高さH、
および絶縁スペーサ3内に埋め込んだシールド25の適
当な位置への配置によりこれらの空間部の電界が緩和さ
れるため、仮に絶縁スペーサ3近傍のこれらの領域に、
万一導電性異物8が入っても絶縁性能の低下を小さく抑
えることができる。
An insulating spacer 3 is interposed between the flanges 2 of the adjacent closed containers 1, and these are fastened by bolts 23. A concave portion is formed inside the flange 2 on the insulating spacer 3 side, and the mounting portion 9B which is the end portion of the tilted electrode 9 is positioned in the concave portion and fixed by the bolt 24. The inclined electrode 9 is stepped so as to match the attachment of the insulating spacer 3 to the concave portion. However, the shape is not limited because it can be fixed to the inner surface of the closed vessel 1 by welding or bolts. The entire surface up to the electric field relaxation portion 9C may be formed as a smooth curved surface. Since such an inclined electrode 9 can be attached to the closed container 1 in advance, it is possible to suppress mixing of a conductive foreign substance in the same portion. Further, the distance L3 formed between the bolt 24 and the insulating spacer 3 and the electric field relaxation portion 9C of the inclined electrode 9 are provided.
L4 between the insulating spacer 3 and the height H of the inclined shield,
Since the electric field in these spaces is relaxed by disposing the shield 25 embedded in the insulating spacer 3 at an appropriate position, tentatively, in these regions near the insulating spacer 3,
Even if the conductive foreign matter 8 enters, the deterioration of the insulation performance can be suppressed small.

【0015】図2は図1の縦断面図であり、導電性異物
の動作原理を併記している。
FIG. 2 is a vertical cross-sectional view of FIG. 1, which also shows the principle of operation of the conductive foreign matter.

【0016】今、何等かの原因で密閉容器1内における
絶縁スペーサ3の近傍に導電性異物8Aが混入し、高電
圧導体5に直流高電圧が印加された場合、傾斜シールド
6と傾斜電極9の間を導電性異物8Aが往復運動を繰り
返すが、傾斜シールド6と傾斜電極9との間の電界は絶
縁スペーサ3に近い方が高く、絶縁スペーサ3から遠ざ
かるにしたがって低くなり、しかも傾斜シールド6と傾
斜電極9には共に傾斜が形成されていて衝突した導電性
異物8Aの入射角に対する反射角の関係から、導電性異
物8Aは上述した往復運動を繰り返しながら、異物捕獲
部10に向かい同異物捕獲部10で捕獲されることにな
る。
If the conductive foreign matter 8A enters the vicinity of the insulating spacer 3 in the closed container 1 for some reason and a high DC voltage is applied to the high-voltage conductor 5, the inclined shield 6 and the inclined electrode 9 The conductive foreign material 8A repeats reciprocating motion between the inclined spacer 6 and the inclined electrode 6, and the electric field between the inclined shield 6 and the inclined electrode 9 is higher near the insulating spacer 3 and becomes lower as the distance from the insulating spacer 3 increases. The conductive foreign material 8A repeats the above-described reciprocating motion and moves toward the foreign material capturing unit 10 while repeating the above-described reciprocating motion. It will be captured by the capture unit 10.

【0017】しかしながら、導電性異物8Aの通常の挙
動は、密閉容器1の中心軸方向および円周方向に対して
不規則なものであるため、できるだけ早い時期に捕獲し
た方が絶縁スペーサ3への付着を防止する上で有利であ
る。そこで、初期の段階での捕獲効率を向上させるため
に、傾斜シールド6を円周方向に複数に分割し、各傾斜
シールド6A,6B,6Cのそれぞれの対向部に間隙1
1を形成している。特に、この導電性異物8Aは上述の
ように往復運動中に密閉容器1の周方向にも移動する
が、そのほとんどが密閉容器1の下半分の範囲で移動す
るため、導電性異物8Aの往復運動中に下部の傾斜シー
ルド6Aの両側に形成した間隙11を通過して傾斜シー
ルド6と高電圧導体5との間に入り込み易い。そこで、
傾斜シールド6Aの幅L1を高電圧導体5の径L2より
も小さくして、傾斜シールド6Aの両側に間隙11を形
成し、また傾斜シールド6Aはその端部に高電圧導体5
に向かって内側に折り曲げた折り曲げ部6A1,6A2
を形成し、一方、傾斜電極9は高電圧導体5側の内面
を、例えば図2における高電圧導体5と同じ中心を持つ
所定半径の曲面としている。このため、導電性異物8が
傾斜シールド6Aの両側に形成した間隙11から進入す
る確率が高くなり、一旦、図2の導電性異物8Cのよう
に間隙11から進入すると、傾斜シールド6Aと高電圧
導体5とが同電位であり外へ飛び出して再び往復運動を
起こすことはない。しかも傾斜シールド6Aには折り曲
げ部6A1,6A2が形成されているため、機械的な振
動が加わっても導電性異物8Cが再び飛び出すことは難
しくなり、初期の段階での捕獲効率が向上する。
However, since the normal behavior of the conductive foreign matter 8A is irregular in the central axis direction and the circumferential direction of the closed container 1, it is better to capture the foreign matter 8A as early as possible. This is advantageous in preventing adhesion. Therefore, in order to improve the trapping efficiency in the initial stage, the tilted shield 6 is divided into a plurality of pieces in the circumferential direction, and the gap 1 is formed in each of the facing portions of the tilted shields 6A, 6B, 6C.
1 is formed. In particular, the conductive foreign matter 8A also moves in the circumferential direction of the closed container 1 during the reciprocating motion as described above, but most of it moves in the lower half range of the closed container 1, so that the conductive foreign matter 8A reciprocates. During movement, it easily passes through the gaps 11 formed on both sides of the lower tilted shield 6A and enters between the tilted shield 6 and the high-voltage conductor 5. Therefore,
The width L1 of the inclined shield 6A is made smaller than the diameter L2 of the high voltage conductor 5 to form gaps 11 on both sides of the inclined shield 6A, and the inclined shield 6A has the high voltage conductor 5 at its end.
6A1, 6A2 bent inward toward
On the other hand, the inclined electrode 9 has an inner surface on the high voltage conductor 5 side, for example, a curved surface having a predetermined radius and having the same center as that of the high voltage conductor 5 in FIG. Therefore, the probability that the conductive foreign matter 8 enters through the gap 11 formed on both sides of the inclined shield 6A increases, and once the conductive foreign matter 8 enters through the gap 11 like the conductive foreign matter 8C in FIG. Since the conductor 5 has the same potential, the conductor 5 does not jump out and reciprocate again. Moreover, since the inclined shield 6A is formed with the bent portions 6A1 and 6A2, it becomes difficult for the conductive foreign matter 8C to jump out again even if mechanical vibration is applied, and the trapping efficiency in the initial stage is improved.

【0018】上述の場合と同じ理由で、傾斜電極9は密
閉容器1の底部付近にのみに配置すれば良く、さらに傾
斜電極9の円周方向の両端部には密閉容器1との間に間
隙12を形成すると共に、密閉容器1側に折り曲げた折
り曲げ部9A1,9A2を形成している。傾斜電極9の
円周方向の両端部付近では電界に差が生じるが、導電性
異物8Dが図2の円周方向に移動中に傾斜電極9よりも
外側へ移動したとしても、傾斜電極9が無い密閉容器1
の内表面部の電界が小さいため、導電性異物8Dの往復
運動が抑制され、隙間12より入り込み傾斜電極9内に
確実に捕獲される。一旦、図2の導電性異物8Dのよう
に間隙12から進入して捕獲されると、傾斜電極9と密
閉容器1とが同電位であり外へ飛び出して再び往復運動
を起こすことはない。しかも傾斜電極9には折り曲げ部
9A1,9A2が形成されているため、機械的な振動が
加わっても導電性異物8Dが再び飛び出すことは難しく
なり、初期の段階での捕獲効率が向上する。従って、導
電性異物8が絶縁スペーサ3に付着して絶縁性能が低下
するのは防止される。
For the same reason as described above, the inclined electrode 9 may be disposed only near the bottom of the closed container 1, and furthermore, at both circumferential ends of the inclined electrode 9, a gap is formed between the inclined electrode 9 and the closed container 1. 12 is formed, and bent portions 9A1 and 9A2 that are bent toward the closed container 1 side are formed. Although a difference occurs in the electric field near both ends in the circumferential direction of the inclined electrode 9, even if the conductive foreign matter 8D moves outward from the inclined electrode 9 while moving in the circumferential direction in FIG. No closed container 1
Since the electric field on the inner surface of the conductive foreign substance is small, the reciprocating motion of the conductive foreign matter 8D is suppressed, and the conductive foreign substance 8D enters through the gap 12 and is reliably captured in the inclined electrode 9. Once the foreign matter 8D enters and is captured through the gap 12 like the conductive foreign matter 8D in FIG. 2, the tilted electrode 9 and the hermetically sealed container 1 are at the same potential and do not jump out to reciprocate again. In addition, since the bent portions 9A1 and 9A2 are formed in the inclined electrode 9, it becomes difficult for the conductive foreign matter 8D to jump out again even when mechanical vibration is applied, and the trapping efficiency in the initial stage is improved. Therefore, it is possible to prevent the conductive foreign matter 8 from adhering to the insulating spacer 3 and lowering the insulating performance.

【0019】図3は傾斜シールド6の具体的な形状を示
したものである。この実施例では傾斜シールド6を円周
方向に三分割したが、この分割数を変更しても良い。こ
のように傾斜シールド6を分割構造にすることによっ
て、全体を筒状の単一の傾斜シールドとした場合より
も、製作上の加工および組立の作業性を改善することが
できる。また傾斜シールド6は必ずしも高電圧導体5と
同心的に配置した筒状とする必要はなく、上述した導電
性異物8のほぼ限定された領域での挙動を考慮して、基
本的には高電圧導体5の下部に位置するようにし、他の
部分は電界との兼ね合いで形状等を決定しても良い。い
ずれにしても、これら傾斜シールド6は、その絶縁スペ
ーサ3側の径を反絶縁スペーサ側よりも大きくするなど
して、絶縁スペーサ3側を反絶縁スペーサ側よりも密閉
容器1に近付けて導電性異物8を異物捕獲部10へ移動
させるように傾斜させたため、その絶縁スペーサ3側に
電界集中を防止するための大きな曲率の電界緩和部を形
成するのが容易になり、絶縁スペーサ3における対向部
近傍の電界も同時に緩和して、絶縁スペーサ3の沿面部
の絶縁耐力を向上させることができる。
FIG. 3 shows a specific shape of the inclined shield 6. In this embodiment, the inclined shield 6 is divided into three in the circumferential direction, but the number of divisions may be changed. By thus forming the tilted shield 6 in a divided structure, workability in manufacturing and assembling can be improved as compared with the case where the whole tilted shield has a cylindrical shape. Further, the inclined shield 6 does not necessarily have to be a cylindrical shape that is arranged concentrically with the high voltage conductor 5, and basically the high voltage is taken into consideration in consideration of the behavior of the conductive foreign matter 8 in the substantially limited region. The shape and the like may be determined so as to be located under the conductor 5 and the other portion in consideration of the electric field. In any case, these inclined shields 6 are made conductive by keeping the diameter of the insulating spacer 3 side larger than the anti-insulating spacer side so that the insulating spacer 3 side is closer to the closed container 1 than the anti-insulating spacer side. Since the foreign material 8 is inclined so as to move to the foreign material capturing portion 10, it is easy to form an electric field relaxation portion having a large curvature on the insulating spacer 3 side to prevent electric field concentration. The electric field in the vicinity can be alleviated at the same time, and the dielectric strength of the creeping surface of the insulating spacer 3 can be improved.

【0020】図5は本発明の他の実施例による密閉導体
装置を示す縦断面図である。
FIG. 5 is a vertical sectional view showing a sealed conductor device according to another embodiment of the present invention.

【0021】密閉容器1の軸方向両端はそれぞれ絶縁ス
ペーサ3A,3Bによってガス的に区分されており、絶
縁スペーサ3Aの埋込中心導体4Aには高電圧導体5A
の一端が図6に示すようにボルト18で固定され、他方
の絶縁スペーサ3Bの埋込中心導体4Bには高電圧導体
5Bの一端が同様に固定されている。高電圧導体5Aを
覆うように設けた傾斜シールド6の径大部は、図6に示
すように高電圧導体5Aへボルト19によって固定さ
れ、また傾斜シールド6の径小部は、図7に示すように
高電圧導体5Aへボルト20によって固定されている。
高電圧導体5Bを覆うように設けた傾斜シールド6も同
様に固定されている。また高電圧導体5Aおよび5Bの
対向した他端間は、図7に示す断面図のようにチュ−リ
ップ形接触子13と電界緩和用シ−ルド14で成る接続
部16によって電気的に接続されている。この電界緩和
用シ−ルド14の径は高電圧導体5A,5Bよりも大き
いため、これを導電性異物捕獲用シ−ルドとして兼用し
ている。具体的には、図7に示すように電界緩和用シ−
ルド14の下部の軸方向両端に間隙17A,17Bをそ
れぞれ形成すると共に、同部を内側にそれぞれ折り返し
た折り返し部14A1,14A2を形成している。
Both ends in the axial direction of the closed container 1 are gas-divided by insulating spacers 3A and 3B, respectively, and a high voltage conductor 5A is provided in a buried center conductor 4A of the insulating spacer 3A.
One end of the high voltage conductor 5B is similarly fixed to the embedded center conductor 4B of the other insulating spacer 3B as shown in FIG. The large-diameter portion of the inclined shield 6 provided so as to cover the high-voltage conductor 5A is fixed to the high-voltage conductor 5A by bolts 19 as shown in FIG. 6, and the small-diameter portion of the inclined shield 6 is shown in FIG. Is fixed by the bolt 20 to the high voltage conductor 5A.
The inclined shield 6 provided so as to cover the high voltage conductor 5B is also fixed in the same manner. The opposite ends of the high-voltage conductors 5A and 5B are electrically connected by a connecting portion 16 including a tulip-shaped contact 13 and an electric field relaxation shield 14 as shown in the sectional view of FIG. ing. Since the diameter of the electric field relaxation shield 14 is larger than that of the high voltage conductors 5A and 5B, it is also used as a conductive foreign matter capturing shield. Specifically, as shown in FIG.
Gaps 17A and 17B are formed at both ends of the lower portion of the groove 14 in the axial direction, respectively, and turn-back portions 14A1 and 14A2 are formed by turning the same portions inward.

【0022】このため、接続部16まで移動してきた導
電性異物8は電界緩和用シ−ルド14の軸方向両端に形
成した間隙17A,17Bから入り込み、上述した傾斜
シールド6の場合と同様に捕獲され、その後の機械的な
振動が加えられても飛び出すことがない。また導電性異
物8は電界緩和用シ−ルド14の近傍における急激な電
界の変化により、接触部16に対向する異物捕獲部10
に落ち結果的に捕獲される。
For this reason, the conductive foreign matter 8 having moved to the connection portion 16 enters through the gaps 17A and 17B formed at both ends in the axial direction of the electric field alleviating shield 14, and is captured in the same manner as in the case of the above-mentioned inclined shield 6. It does not fly out even if a subsequent mechanical vibration is applied. In addition, the conductive foreign substance 8 is subjected to a sudden change in the electric field in the vicinity of the electric field alleviating shield 14 so that the foreign substance capturing section
The result is a catch.

【0023】図8は本発明のさらに他の実施例による密
閉導体装置の要部を示す縦断面図である。
FIG. 8 is a vertical sectional view showing a main part of a hermetically sealed conductor device according to still another embodiment of the present invention.

【0024】この実施例の密閉導体装置は、図5に示し
た密閉導体装置と比較すると接続部16の構成位置が異
なる。つまり、絶縁スペーサ3の埋込中心導体4に接触
子受け導体21および電界緩和用シールド14をボルト
22によって固定し、電界緩和用シールド14内に配置
した接触子13によって高電圧導体5の対向側端部と電
気的に接続するようにし、図示しない高電圧導体5の他
端は反対側の絶縁スペーサに直接固定して支持してい
る。このように接続部16が絶縁スペーサ3の近傍に位
置する場合、図1に示す実施例のように必ずしも傾斜シ
ールド6によって接触子13まで包囲する必要はなく、
電界緩和用シールド14と傾斜シールド6を軸方向に並
置しても良い。この実施例においても、電界緩和用シー
ルド14には高電圧導体5の対向側端部を挿入するため
の開口部があるため、この開口部から進入してきた導電
性異物8を捕獲することができ、また電界緩和用シール
ド14の形状によって絶縁スペーサ3の電界を緩和でき
る他、図1に示す実施例とほぼ同様の効果を得ることが
できる。
The sealed conductor device of this embodiment differs from the sealed conductor device shown in FIG. 5 in the position of the connecting portion 16. That is, the contact receiving conductor 21 and the electric field mitigating shield 14 are fixed to the embedded center conductor 4 of the insulating spacer 3 by the bolts 22, and the opposite side of the high voltage conductor 5 is arranged by the contact 13 arranged in the electric field mitigating shield 14. The other end of the high-voltage conductor 5 (not shown) is directly fixed to and supported by an insulating spacer on the opposite side. When the connecting portion 16 is located near the insulating spacer 3 in this way, it is not always necessary to surround the contactor 13 with the inclined shield 6 as in the embodiment shown in FIG.
The electric field relaxation shield 14 and the inclined shield 6 may be juxtaposed in the axial direction. Also in this embodiment, since the electric field mitigating shield 14 has an opening for inserting the opposite side end of the high-voltage conductor 5, the conductive foreign matter 8 that has entered through this opening can be captured. In addition, the shape of the electric field relaxing shield 14 can reduce the electric field of the insulating spacer 3, and can provide substantially the same effect as the embodiment shown in FIG.

【0025】図10は本発明のさらに異なる実施例によ
る密閉導体装置の縦断面図で、高電圧導体5の周囲に設
けた傾斜シールド6のうち、特に、密閉容器1の底部側
に対向して設けた傾斜シールド6Aの高電圧導体5側に
粘着性シートまたは高誘電率のコーティング被覆等の拘
束被膜26を施している。勿論、このような拘束被膜2
6は傾斜シールド6b、6Cにも施しても良い。間隙1
1から進入した導電性異物8は、傾斜シールド6Aと高
電圧導体5が同電位であり、傾斜シールド6Aに折り返
し部6A1,6A2が形成されていることに加えて、こ
の拘束被膜26によっても動きが拘束されるため、更に
大きな機械的振動が密閉導体装置に加わっても導電性異
物8が間隙11から外へ飛び出すことがない。
FIG. 10 is a longitudinal sectional view of a sealed conductor device according to still another embodiment of the present invention. Among the inclined shields 6 provided around the high-voltage conductor 5, in particular, facing the bottom side of the sealed container 1. A constraining film 26 such as an adhesive sheet or a high dielectric constant coating is applied to the high voltage conductor 5 side of the provided inclined shield 6A. Of course, such a constrained coating 2
6 may also be applied to the inclined shields 6b and 6C. Gap 1
The conductive foreign matter 8 that has entered from 1 moves by the constraining film 26 in addition to the inclined shield 6A and the high-voltage conductor 5 having the same potential, the folded parts 6A1 and 6A2 being formed on the inclined shield 6A. Is restrained, the conductive foreign matter 8 does not jump out of the gap 11 even when a larger mechanical vibration is applied to the closed conductor device.

【0026】図11は本発明のさらに異なる実施例によ
る密閉導体装置の縦断面図で、高電圧導体5の周囲に設
けた傾斜シールド6のうち、特に、密閉容器1の底部側
に対向して設けた傾斜シールド6Aの傾斜電極9側にコ
ーティング等で絶縁被覆27を施したものである。この
ような絶縁被覆27は傾斜シールド6b、6Cにも施し
ても良い。この絶縁被覆27を設けることにより、導電
性異物8が傾斜シールド6Aの近傍にあるときに発生し
ていた微小放電を防止することができ、これに伴う同部
の絶縁耐力の低下を防止できる。
FIG. 11 is a longitudinal sectional view of a sealed conductor device according to still another embodiment of the present invention. Among the inclined shields 6 provided around the high-voltage conductor 5, particularly, facing the bottom side of the sealed container 1. The insulating shield 27 is formed by coating or the like on the inclined electrode 9 side of the provided inclined shield 6A. Such an insulating coating 27 may be applied to the inclined shields 6b and 6C. By providing this insulating coating 27, it is possible to prevent a minute discharge that has occurred when the conductive foreign matter 8 is in the vicinity of the inclined shield 6A, and to prevent a decrease in the dielectric strength of the same portion due to this.

【0027】尚、上述の各実施例ではいずれの場合も密
閉容器1の底部と、これに対向する高電圧導体5との間
に、少なくとも傾斜シールド6Aと傾斜電極9を設けた
が、傾斜電極9を省略して傾斜シールド6Aのみとして
も、傾斜シールド6Aとの衝突によって導電性異物に方
向性を与えて異物捕獲部10へ導くことができる。
In each of the above-described embodiments, at least the inclined shield 6A and the inclined electrode 9 are provided between the bottom of the closed container 1 and the high voltage conductor 5 facing the closed container 1. Even if 9 is omitted and only the inclined shield 6A is provided, the conductive foreign matter can be guided by collision with the inclined shield 6A to the foreign matter capturing unit 10.

【0028】[0028]

【発明の効果】以上説明したように本発明の密閉導体装
置によれば、密閉容器の底部に対向する高電圧導体に傾
斜シールドを設け、この傾斜シールドの絶縁スペーサ側
端を他端より密閉容器に近付けたため、導電性異物が混
入して傾斜シールドと密閉容器間で往復運動を行なった
としても、傾斜シールドの傾斜を利用して徐々に導電性
異物を反絶縁スペーサ側に導くことができ、特殊な構造
の密閉容器を用いることなく導電性異物を異物捕獲部に
容易に捕獲し、絶縁スペーサの絶縁耐力を向上させるこ
とができる。
As described above, according to the hermetically-sealed conductor device of the present invention, the high-voltage conductor facing the bottom of the hermetically sealed container is provided with the inclined shield, and the end of the inclined shield on the side of the insulating spacer is sealed from the other end. , Even if conductive foreign matter is mixed and reciprocated between the inclined shield and the sealed container, the conductive foreign matter can be gradually guided to the anti-insulating spacer side by using the inclination of the inclined shield, The conductive foreign matter can be easily captured by the foreign matter capturing portion without using a closed container having a special structure, and the dielectric strength of the insulating spacer can be improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例による密閉導体装置の一部破
断斜視図である。
FIG. 1 is a partially cutaway perspective view of a sealed conductor device according to an embodiment of the present invention.

【図2】図1に示した密閉導体装置の縦断側面図であ
る。
FIG. 2 is a vertical sectional side view of the closed conductor device shown in FIG.

【図3】図1に示した密閉導体装置の要部拡大図であ
る。
3 is an enlarged view of a main part of the closed conductor device shown in FIG.

【図4】図1に示した密閉導体装置の他の要部拡大図で
ある。
FIG. 4 is an enlarged view of another main part of the sealed conductor device shown in FIG. 1;

【図5】本発明の他の実施例による密閉導体装置の縦断
正面図である。
FIG. 5 is a longitudinal sectional front view of a sealed conductor device according to another embodiment of the present invention.

【図6】図5に示した密閉導体装置の要部拡大図であ
る。
FIG. 6 is an enlarged view of a main part of the sealed conductor device shown in FIG.

【図7】図5に示した密閉導体装置の他の要部拡大図で
ある。
7 is an enlarged view of another main part of the closed conductor device shown in FIG.

【図8】本発明のさらに他の実施例による密閉導体装置
の要部を示す縦断正面図である。
FIG. 8 is a vertical cross-sectional front view showing a main part of a sealed conductor device according to still another embodiment of the present invention.

【図9】図1に示した密閉導体装置のさらに他の要部拡
大断面図である。
9 is an enlarged cross-sectional view of still another main part of the closed conductor device shown in FIG.

【図10】本発明のさらに他の実施例による密閉導体装
置の要部を示す縦断側面図である。
FIG. 10 is a vertical cross-sectional side view showing a main part of a closed conductor device according to still another embodiment of the present invention.

【図11】本発明のさらに他の実施例による密閉導体装
置の要部を示す縦断側面図である。
FIG. 11 is a vertical cross-sectional side view showing a main part of a sealed conductor device according to still another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 密閉容器 2 フランジ 3 絶縁スペーサ 5 高電圧導体 6 傾斜シールド 6A1,6A2 折り返し部 8 導電性異物 9 傾斜電極 9A1,9A2 折り返し部 9C 電界緩和部 10 異物捕獲部 11,12 間隙 26 拘束被膜 27 絶縁被膜 1 Airtight Container 2 Flange 3 Insulation Spacer 5 High Voltage Conductor 6 Inclined Shield 6A1, 6A2 Folded Part 8 Conductive Foreign Material 9 Inclined Electrode 9A1, 9A2 Folded Part 9C Electric Field Mitigating Part 10 Foreign Material Capture Part 11, 12 Gap 26 Restraint Film 27 Insulation Film

フロントページの続き (72)発明者 安納 憲次 茨城県日立市国分町一丁目1番1号 株式 会社日立製作所国分工場内 (72)発明者 山極 時生 茨城県日立市国分町一丁目1番1号 株式 会社日立製作所国分工場内 (72)発明者 竹治 直昭 大阪府大阪市北区中之島3丁目3番22号 関西電力株式会社内 (72)発明者 山地 幸司 香川県高松市丸の内2の5 四国電力株式 会社内 (72)発明者 色川 裕之 東京都中央区銀座六丁目15番1号 電源開 発株式会社内Front Page Continuation (72) Inventor Kenji Anno 1-1-1, Kokubuncho, Hitachi City, Ibaraki Hitachi Co., Ltd. Kokubun Factory (72) Inventor Tokio Yamagoku 1-1-1 Kokubuncho, Hitachi City, Ibaraki Prefecture Stock Company Hitachi Kokubun Plant (72) Inventor Naoaki Takeharu 3-3-22 Nakanoshima, Kita-ku, Osaka City, Osaka Prefecture Kansai Electric Power Co., Inc. (72) Inventor Koji Yamaji 2-5 Shikoku Electric Power Company, Marunouchi, Takamatsu City, Kagawa Prefecture In-house (72) Inventor Hiroyuki Shirakawa 6-15-1 Ginza, Chuo-ku, Tokyo Power source development Co., Ltd.

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 軸方向端を絶縁スペーサによって封じた
密閉容器内に絶縁性ガスを封入すると共に、上記絶縁ス
ペーサによって上記密閉容器から絶縁して高電圧導体を
支持した密閉導体装置において、上記高電圧導体の少な
くとも下部に位置する部分に、上記絶縁スペーサ側の端
部を反絶縁スペーサ側の端部よりも上記密閉容器に近付
けた傾斜シールドを設け、この傾斜シールドを上記高電
圧導体と同電位にし、上記傾斜シールドの上記反絶縁ス
ペーサ側の端部近傍に異物捕獲部を設けたことを特徴と
する密閉導体装置。
1. A sealed conductor device in which an insulating gas is sealed in a sealed container whose axial end is sealed by an insulating spacer, and which is insulated from the sealed container by the insulating spacer to support a high-voltage conductor. At least a lower portion of the voltage conductor is provided with an inclined shield whose end on the insulating spacer side is closer to the closed container than the end on the anti-insulating spacer side, and the inclined shield is placed at the same potential as the high-voltage conductor. And a foreign matter capturing portion is provided near an end of the inclined shield on the side opposite to the insulating spacer.
【請求項2】 請求項1記載のものにおいて、上記高電
圧導体の下部に配置した上記傾斜シールドは、上記高電
圧導体の円周方向における両端部に間隙を形成したこと
を特徴とする密閉導体装置。
2. The hermetically sealed conductor according to claim 1, wherein the inclined shield arranged below the high-voltage conductor has a gap formed at both ends in the circumferential direction of the high-voltage conductor. apparatus.
【請求項3】 請求項2記載のものにおいて、上記傾斜
シールドの上記高電圧導体の円周方向における両端部
に、上記高電圧導体側に折り返した折り返し部をそれぞ
れ形成したことを特徴とする密閉導体装置。
3. The hermetically sealed structure according to claim 2, wherein the inclined shield is formed with a folded-back portion that is folded back toward the high-voltage conductor at both ends of the high-voltage conductor in the circumferential direction. Conductor device.
【請求項4】 請求項1記載のものにおいて、上記傾斜
シールドは、上記高電圧導体の円周方向に複数に分割し
て成り、上記高電圧導体の下部に配置した上記傾斜シー
ルドは、上記高電圧導体の円周方向における両端部に上
記高電圧導体側に折り返した折り返し部をそれぞれ形成
すると共に、他の上記傾斜シールドとの間に間隙を形成
したことを特徴とする密閉導体装置。
4. The high-voltage conductor according to claim 1, wherein the inclined shield is divided into a plurality of parts in a circumferential direction of the high-voltage conductor. A hermetically-sealed conductor device characterized in that folded-back portions folded back toward the high-voltage conductor are formed at both ends of the voltage conductor in the circumferential direction, and a gap is formed between the folded shield and another inclined shield.
【請求項5】 請求項1記載のものにおいて、上記傾斜
シールドは、上記高電圧導体の円周方向に複数に分割し
て成ると共に、上記高電圧導体の外周部を包囲して配置
し、上記各傾斜シールドの上記絶縁スペーサ側の端部を
反絶縁スペーサ側の端部よりも径を大きくしたことを特
徴とする密閉導体装置。
5. The high-voltage conductor according to claim 1, wherein the inclined shield is divided into a plurality of pieces in the circumferential direction of the high-voltage conductor, and the inclined shield is arranged so as to surround the outer periphery of the high-voltage conductor. A hermetically-sealed conductor device, wherein an end portion of each inclined shield on the side of the insulating spacer is made larger in diameter than an end portion on the side of the anti-insulating spacer.
【請求項6】 請求項1〜5記載のものにおいて、上記
高電圧導体の下部に配置した上記傾斜シールドに対向し
て、上記密閉容器側に密閉容器と同電位にした傾斜電極
を設け、この傾斜電極の上記絶縁スペーサ側の端部を反
絶縁スペーサ側の端部よりも上記高電圧導体側に近付け
たことを特徴とする密閉導体装置。
6. The sealed container according to claim 1, further comprising: an inclined electrode having the same potential as that of the sealed container, provided on the sealed container side, opposite to the inclined shield disposed below the high-voltage conductor. A closed conductor device wherein the end of the inclined electrode on the insulating spacer side is closer to the high voltage conductor side than the end on the anti-insulating spacer side.
【請求項7】 請求項6記載のものにおいて、上記傾斜
電極は、上記密閉容器の円周方向における両端部に上記
密閉容器側に折り返した折り返し部をそれぞれ形成する
と共に、上記密閉容器との間に間隙を形成したことを特
徴とする密閉導体装置。
7. The electrode according to claim 6, wherein the tilted electrode is formed with a folded-back portion that is folded back toward the closed container at both ends in the circumferential direction of the closed container, and is provided between the tilted electrode and the closed container. A sealed conductor device characterized in that a gap is formed in the closed conductor device.
【請求項8】 請求項1〜7記載のものにおいて、上記
高電圧導体の下部に配置した上記傾斜シールドの上記密
閉容器側表面に、絶縁被膜を設けたことを特徴とする密
閉導体装置。
8. The hermetic conductor device according to claim 1, wherein an insulating coating is provided on a surface of the inclined shield disposed below the high-voltage conductor on the hermetic container side.
JP6182091A 1994-08-03 1994-08-03 Closed conductor device Expired - Fee Related JP2667640B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6182091A JP2667640B2 (en) 1994-08-03 1994-08-03 Closed conductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6182091A JP2667640B2 (en) 1994-08-03 1994-08-03 Closed conductor device

Publications (2)

Publication Number Publication Date
JPH0847148A true JPH0847148A (en) 1996-02-16
JP2667640B2 JP2667640B2 (en) 1997-10-27

Family

ID=16112203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6182091A Expired - Fee Related JP2667640B2 (en) 1994-08-03 1994-08-03 Closed conductor device

Country Status (1)

Country Link
JP (1) JP2667640B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008053585A1 (en) * 2006-10-31 2008-05-08 Mitsubishi Electric Corporation Gas insulating electric device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008053585A1 (en) * 2006-10-31 2008-05-08 Mitsubishi Electric Corporation Gas insulating electric device
US8546687B2 (en) 2006-10-31 2013-10-01 Mitsubishi Electric Corporation Gas insulated electric apparatus

Also Published As

Publication number Publication date
JP2667640B2 (en) 1997-10-27

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