JPH08336829A - Wire saw - Google Patents

Wire saw

Info

Publication number
JPH08336829A
JPH08336829A JP14588795A JP14588795A JPH08336829A JP H08336829 A JPH08336829 A JP H08336829A JP 14588795 A JP14588795 A JP 14588795A JP 14588795 A JP14588795 A JP 14588795A JP H08336829 A JPH08336829 A JP H08336829A
Authority
JP
Japan
Prior art keywords
wire
wafers
cleaning liquid
liq
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14588795A
Other languages
Japanese (ja)
Other versions
JP3075143B2 (en
Inventor
Shiyouzou Katamachi
省三 片町
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Seimitsu Co Ltd
Original Assignee
Tokyo Seimitsu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Seimitsu Co Ltd filed Critical Tokyo Seimitsu Co Ltd
Priority to JP14588795A priority Critical patent/JP3075143B2/en
Publication of JPH08336829A publication Critical patent/JPH08336829A/en
Application granted granted Critical
Publication of JP3075143B2 publication Critical patent/JP3075143B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0076Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

PURPOSE: To improve cleaning effect of a wafer by injecting a high pressure cleaning liq. into each groove between wafers from a nozzle after an article to be processed is cut into a number of wafers by means of arrayed wires. CONSTITUTION: A semiconductor ingot 54 is positioned and set on a work transferring table 48 and arrayed wires 24 are made to run by driving a motor. Then, while a processing liq. is fed to the running wires 24 from a processing liq. feeding nozzle below. The ingot 54 is cut thereby into a number of wafers 55, 55... by the lapping action of the processing liq. Then, after it is cut to a specified position of a slice base 58, a cleaning liq. is injected under a high pressure toward the inside of each groove between wafers from slits of cleaning liq. feeding nozzles 62 and 62. At the same time, the wafers 55, 55... are elevated and pulled out from the wire lines 24. In this instance, staining of the processing liq., etc., adhering to the surface is removed by the wiping effect of the running wires.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の利用分野】本発明はワイヤソーに係り、特に半
導体インゴット等の被加工物を走行するワイヤ列で多数
のウェーハに切断するワイヤソーに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire saw, and more particularly to a wire saw that cuts a large number of wafers by a wire row that travels a workpiece such as a semiconductor ingot.

【0002】[0002]

【従来の技術】ワイヤソーは、一対のワイヤリール間を
往復走行するワイヤを複数の溝付ローラに巻きかけ、そ
の溝付ローラで形成されるワイヤ列に砥粒を含む加工液
を供給しながら被加工物を押し当てることにより、被加
工物を多数のウェーハに切断するものである。
2. Description of the Related Art A wire saw winds a wire that reciprocates between a pair of wire reels around a plurality of grooved rollers, and supplies a working fluid containing abrasive grains to a wire row formed by the grooved rollers. By pressing the work piece, the work piece is cut into a large number of wafers.

【0003】前記の如くワイヤソーは、被加工物を切断
する際に、ワイヤ列に加工液を供給しながら切断してい
る。このため、切断後のウェーハには砥粒を含む多量の
加工液が付着し、後にウェーハを洗浄する際に多大の労
力を要するという問題があった。この問題を解消するた
めに、特開平6−114828号広報には、ワイヤソー
で被加工物を切断終了後、走行するワイヤ列に洗浄液を
かけながらワイヤ列から被加工物を抜き取ることによ
り、ウェーハの予備的な洗浄を行ない、後に行なうウェ
ーハの洗浄の労力を削減することが開示されている。
As described above, the wire saw cuts the workpiece while supplying the working liquid to the wire row. Therefore, there is a problem that a large amount of working liquid containing abrasive grains adheres to the cut wafer, which requires a great deal of labor when the wafer is washed later. In order to solve this problem, Japanese Laid-Open Patent Publication No. 6-114828 discloses that after cutting a workpiece with a wire saw, the workpiece is extracted from the wire row while applying a cleaning liquid to the traveling wire row. It is disclosed that a preliminary cleaning is performed to reduce the labor of cleaning the wafer to be performed later.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、前記ワ
イヤ列に洗浄液をかける洗浄方法では、ワイヤ列にかけ
た洗浄液の大部分が切断されたウェーハ間に供給されず
に下方へ落下してしまうため、洗浄液がウェーハ間の中
心部まで入り込まず、有効にウェーハの洗浄を行なうこ
とができないという欠点がある。
However, in the cleaning method in which the cleaning solution is applied to the wire array, most of the cleaning solution applied to the wire array is not supplied between the cut wafers and drops downward, so that the cleaning solution is However, there is a drawback in that the wafer cannot be effectively cleaned because it does not enter the central portion between the wafers.

【0005】本発明は、このような事情を鑑みてなされ
たもので、ウェーハの洗浄効果を高めることができるワ
イヤソーを提供することを目的とする。
The present invention has been made in view of the above circumstances, and an object thereof is to provide a wire saw capable of enhancing the cleaning effect of a wafer.

【0006】[0006]

【課題を解決する為の手段】本発明は前記目的を達成す
る為に、一対のワイヤリール間を往復走行するワイヤを
複数個の溝付ローラに巻き掛けてワイヤ列を形成し、該
ワイヤ列に砥粒を含む加工液を供給しながら被加工物を
押し当ることにより該被加工物を多数のウェーハに切断
するワイヤソーにおいて、高圧洗浄液を噴射するノズル
を、前記被加工物の近傍で且つ切断されたウェーハ間の
溝内に高圧洗浄液を噴射可能な位置に設け、前記ワイヤ
列により前記被加工物を多数のウェーハに切断後、該ウ
ェーハを走行するワイヤ列から引き抜くときに、前記ノ
ズルから各ウェーハ間の溝内に向けて高圧洗浄液を噴射
することを特徴とする。
In order to achieve the above-mentioned object, the present invention forms a wire row by winding a wire running between a pair of wire reels around a plurality of grooved rollers to form a wire row. In a wire saw that cuts the work piece into a large number of wafers by pressing the work piece while supplying a working liquid containing abrasive grains to the work piece, a nozzle for injecting a high-pressure cleaning liquid is cut in the vicinity of the work piece. Provided at a position where a high-pressure cleaning liquid can be sprayed in the groove between the wafers, after cutting the workpiece into a large number of wafers by the wire row, when pulling out from the wire row running the wafer, each from the nozzle It is characterized in that the high-pressure cleaning liquid is sprayed into the groove between the wafers.

【0007】[0007]

【作用】本発明によれば、被加工物をワイヤ列により多
数のウェーハに切断後、走行するワイヤ列からウェーハ
を引き抜くときに、ノズルから各ウェーハ間の溝内に向
けて洗浄液を噴射する。この噴射された洗浄液は全てウ
ェーハに供給されるので、従来のワイヤ列に洗浄液を供
給する方式のものに比べ、効率的に洗浄液の供給をする
ことができ、短時間でウェーハを洗浄することができ
る。また、洗浄液を高圧で噴射供給すると、洗浄液をウ
ェーハの中心部まで入り込ませることができ、これによ
り、各ウェーハの中心部まで洗浄することが可能にな
る。
According to the present invention, after the workpiece is cut into a large number of wafers by the wire row, and when the wafer is pulled out from the traveling wire row, the cleaning liquid is sprayed from the nozzle toward the groove between the wafers. Since all of the sprayed cleaning liquid is supplied to the wafer, the cleaning liquid can be supplied more efficiently and the wafer can be cleaned in a shorter time than the conventional method of supplying the cleaning liquid to the wire row. it can. In addition, when the cleaning liquid is jetted and supplied at a high pressure, the cleaning liquid can be made to enter the central portion of the wafer, which makes it possible to clean the central portion of each wafer.

【0008】[0008]

【実施例】以下添付図面に従って本発明に係るワイヤソ
ーの加工液温度制御装置の好ましい実施例について詳説
する。図1は、本発明に係るワイヤソー10の全体構成
図である。一方のワイヤリール12に巻回されたワイヤ
14は、ワイヤ案内装置16、複数のガイドローラ1
8、18、ダンサローラ20を経由して3本の溝付きロ
ーラ22、22、22に順次巻き掛けられてワイヤ列2
4を形成した後、複数のガイドローラ18、18、ダン
サローラ20、ワイヤ案内装置16を経て他方のワイヤ
リール26に巻き取られる。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of a working fluid temperature control device for a wire saw according to the present invention will be described in detail below with reference to the accompanying drawings. FIG. 1 is an overall configuration diagram of a wire saw 10 according to the present invention. The wire 14 wound around one wire reel 12 includes a wire guide device 16 and a plurality of guide rollers 1.
The wire row 2 is wound around the three grooved rollers 22, 22, 22 in sequence via the 8, 18 and the dancer roller 20.
After forming No. 4, it is wound around the other wire reel 26 through the plurality of guide rollers 18, 18, the dancer roller 20, the wire guiding device 16.

【0009】前記ダンサローラ20には所定重量の錘4
4が吊設され、走行するワイヤ14に常に一定の張力を
付与している。前記ワイヤ走行路の途中にはワイヤ洗浄
装置46が設けられ、このワイヤ洗浄装置46によって
ワイヤ14に付着した加工液40が除去される。前記ワ
イヤリール12、26及び3本のうちの1本の溝付きロ
ーラ22には、それぞれ正逆回転可能な駆動モータ2
8、30が連結されており、これらの駆動モータ28、
30を同期させて駆動することにより、ワイヤ14は一
対のワイヤリール12、26間を往復走行する。
The dancer roller 20 has a weight 4 of a predetermined weight.
4 is suspended, and a constant tension is always applied to the traveling wire 14. A wire cleaning device 46 is provided in the middle of the wire traveling path, and the working liquid 40 attached to the wire 14 is removed by the wire cleaning device 46. Each of the wire reels 12, 26 and one grooved roller 22 out of the three reels has a drive motor 2 capable of rotating in the forward and reverse directions.
8 and 30 are connected to each other, and these drive motors 28,
By driving 30 synchronously, the wire 14 travels back and forth between the pair of wire reels 12 and 26.

【0010】前記ワイヤリール12、26には、それぞ
れ正逆回転可能な駆動モータ28、30が連結されると
ともに、3本のうちの1本の溝付きローラ22にも図示
しない駆動モータが連結されており、これらの駆動モー
タ28、30を同期させて駆動することにより、ワイヤ
14は一対のワイヤリール12、26間を往復走行す
る。
The wire reels 12 and 26 are respectively connected with drive motors 28 and 30 capable of rotating in the forward and reverse directions, and a drive motor (not shown) is also connected to one of the three grooved rollers 22. By driving these drive motors 28 and 30 in synchronization, the wire 14 travels back and forth between the pair of wire reels 12 and 26.

【0011】前記ワイヤ列24には、加工液貯留タンク
38に貯留された砥粒(通常、GC♯600〜♯100
0程度のものが使用される)を含む加工液40が加工液
供給ポンプ41で送水されて加工液供給ノズル42から
供給される。後述する半導体インゴット54は、前記ワ
イヤ列24に押し付けられて、この加工液40によるラ
ッピング作用により多数のウェーハ55、55、…に切
断される。なお、ワイヤ列24に供給された加工液40
は、ワイヤ列24の下方に設置された回収皿60で回収
されて、再び加工液貯留タンク38に戻される。すなわ
ち、前記加工液40はワイヤ列24に循環供給されてい
る。
The wire row 24 has abrasive grains (generally GC # 600 to # 100) stored in the machining fluid storage tank 38.
A working fluid 40 containing a material of about 0 is supplied by a working fluid supply pump 41 and supplied from a working fluid supply nozzle 42. A semiconductor ingot 54, which will be described later, is pressed against the wire row 24 and is cut into a large number of wafers 55, 55, ... By the lapping action of the processing liquid 40. The machining liquid 40 supplied to the wire row 24
Is collected by a collecting dish 60 installed below the wire row 24 and returned to the working liquid storage tank 38 again. That is, the working fluid 40 is circulated and supplied to the wire row 24.

【0012】前記ワイヤ列24の上方には、被加工物で
ある半導体インゴット54がスライスベース58、ワー
ク接着ブロック56を介してワーク送りテーブル48に
支持されている。このワーク送りテーブル48は、駆動
モータ50で回動するボールネジ52の作用により昇降
自在に設けられており、このワーク送りテーブル48を
下方に移動させて前記半導体インゴット54を高速走行
するワイヤ列24に押し当てることにより、半導体イン
ゴット54を多数のウェーハ55、55、…に切断す
る。
Above the wire array 24, a semiconductor ingot 54, which is a workpiece, is supported by a work feed table 48 via a slice base 58 and a work adhesive block 56. The work feed table 48 is provided so as to be able to move up and down by the action of a ball screw 52 which is rotated by a drive motor 50. The work feed table 48 is moved downward so that the wire row 24 which travels the semiconductor ingot 54 at a high speed. By pressing, the semiconductor ingot 54 is cut into a large number of wafers 55, 55, ....

【0013】また、図2及び図3に示すように、前記ス
ライスベース58の両側部近傍には、洗浄液供給ノズル
62、62がスライスベース58に沿って配設されてお
り、ブラケット64、64を介してワーク送りテーブル
48に支持されている。この洗浄液供給ノズル62は、
図4に示すように、円筒状に形成されるとともに、その
長手方向に沿ってスリット62Aが形成されており、内
部に洗浄液66を圧入するとスリット62Aから前記半
導体インゴット54に向かって高圧の洗浄液66が噴射
される。このスリット62Aの方向は、ノズル62内に
圧入された洗浄液68が、切断された各ウェーハ55、
55、…間の溝内に噴射されるように形成されている。
Further, as shown in FIGS. 2 and 3, cleaning liquid supply nozzles 62, 62 are arranged along the slice base 58 near both sides of the slice base 58, and brackets 64, 64 are provided. It is supported by the work feed table 48 via the. The cleaning liquid supply nozzle 62 is
As shown in FIG. 4, the cleaning liquid 66 is formed in a cylindrical shape and has a slit 62A formed along the longitudinal direction thereof. When the cleaning liquid 66 is pressed into the inside, a high-pressure cleaning liquid 66 is directed from the slit 62A toward the semiconductor ingot 54. Is jetted. The direction of this slit 62A is such that the cleaning liquid 68 press-fitted into the nozzle 62 is cut into each wafer 55,
It is formed so as to be injected into the groove between 55, ....

【0014】また、図1に示すように、前記洗浄液供給
ノズル62、62に供給される洗浄液68は、洗浄液貯
留タンク66に貯留されており、洗浄液供給ポンプ70
を駆動することにより、互いを連通する洗浄液供給パイ
プ72を介して洗浄液供給ノズル62、62に洗浄液6
8が供給される。なお、前記ワイヤ列24に供給する加
工液40と同様に、半導体インゴット54に供給された
洗浄液68は、ワイヤ列24の下方に設置された回収皿
60で回収されて、再び洗浄液貯留タンク66に戻され
る。すなわち、前記洗浄液68も半導体インゴット54
に循環供給されている。また、回収皿60で回収した液
(加工液40又は洗浄液68)の排出先の切替えは、回
収皿60に設けられた切替パイプ74の排出口の位置を
移動させることにより切り替える。
Further, as shown in FIG. 1, the cleaning liquid 68 supplied to the cleaning liquid supply nozzles 62, 62 is stored in a cleaning liquid storage tank 66, and a cleaning liquid supply pump 70 is provided.
By driving the cleaning liquid 6 to the cleaning liquid supply nozzles 62, 62 via the cleaning liquid supply pipe 72 communicating with each other.
8 is supplied. The cleaning liquid 68 supplied to the semiconductor ingot 54 is recovered by the recovery tray 60 installed below the wire array 24, and is again stored in the cleaning liquid storage tank 66, like the processing liquid 40 supplied to the wire array 24. Will be returned. That is, the cleaning liquid 68 is also used for the semiconductor ingot 54.
It is being circulated to. Further, the switching of the discharge destination of the liquid (processing liquid 40 or cleaning liquid 68) collected in the recovery tray 60 is switched by moving the position of the outlet of the switching pipe 74 provided in the recovery tray 60.

【0015】前記の如く構成される本発明に係るワイヤ
ソーの実施例の作用は次の通りである。まず、ワーク送
りテーブル48に半導体インゴット54を位置決めして
セットし、ワイヤリール12、26の駆動モータ28、
30及び溝付ローラ22の駆動モータを駆動してワイヤ
14を走行させる。
The operation of the embodiment of the wire saw according to the present invention constructed as described above is as follows. First, the semiconductor ingot 54 is positioned and set on the work feed table 48, and the drive motor 28 for the wire reels 12 and 26,
The wire 14 is run by driving the drive motors of the grooved roller 22 and the grooved roller 30.

【0016】次に、走行するワイヤ列24に加工液供給
ノズル42、42から加工液40を供給しながら、半導
体インゴット54を下降させて半導体インゴット54を
ワイヤ列24に押し付ける。これにより、半導体インゴ
ット54は、加工液40のラッピング作用により多数の
ウェーハ55、55、…に切断されていく。そして、ワ
イヤ列24でスライスベース58の所定位置まで切断し
たのち、駆動モータ28、30を一時停止させて加工液
40の供給を停止するとともに、回収皿60で回収する
回収液の排出先を加工液貯留タンク38から洗浄液貯留
タンク66に切り替える。
Next, while supplying the working liquid 40 from the working liquid supply nozzles 42, 42 to the traveling wire array 24, the semiconductor ingot 54 is lowered to press the semiconductor ingot 54 against the wire array 24. As a result, the semiconductor ingot 54 is cut into a large number of wafers 55, 55, ... By the lapping action of the processing liquid 40. Then, after cutting to a predetermined position of the slice base 58 with the wire row 24, the driving motors 28 and 30 are temporarily stopped to stop the supply of the processing liquid 40, and the discharge destination of the recovery liquid to be recovered in the recovery tray 60 is processed. The liquid storage tank 38 is switched to the cleaning liquid storage tank 66.

【0017】次に、再び駆動モータ28、30を駆動し
てワイヤ14を走行させる。そして、洗浄液供給ポンプ
70を駆動して洗浄液供給ノズル62、62のスリット
62A、62Aから各ウェーハ55、55、…間の溝内
に向けて洗浄液68を高圧力で噴射する。これと同時
に、駆動モータ50を駆動してウェーハ55、55、…
を上昇させ、ワイヤ列24からウェーハ55を抜き取
る。
Next, the drive motors 28 and 30 are driven again to drive the wire 14. Then, the cleaning liquid supply pump 70 is driven to inject the cleaning liquid 68 at high pressure from the slits 62A, 62A of the cleaning liquid supply nozzles 62, 62 into the grooves between the wafers 55, 55, .... At the same time, the drive motor 50 is driven to drive the wafers 55, 55, ...
And the wafer 55 is removed from the wire row 24.

【0018】この際、各ウェーハ55、55、…は、噴
射された洗浄液68の吐出力、及び走行するワイヤ14
の拭き落としの効果により、その表面に付着された加工
液40等の汚れが除去される。このように、本実施例の
ワイヤソー10によれば、洗浄液68を直接各ウェーハ
55、55、…間の溝内に向けて高圧で噴射するように
したので、供給した洗浄液68をウェーハ55、55、
…の中心部まで入り込ませることができる。これによ
り、ウェーハ55、55、…の中心部まで洗浄すること
が可能になり、洗浄効果を高めることができる。
At this time, the wafers 55, 55, ...
Due to the effect of wiping off, the stain such as the working liquid 40 attached to the surface is removed. As described above, according to the wire saw 10 of the present embodiment, the cleaning liquid 68 is directly jetted at a high pressure toward the groove between the wafers 55, 55, ..., Therefore, the supplied cleaning liquid 68 is supplied to the wafers 55, 55. ,
You can enter the center of…. As a result, the central portions of the wafers 55, 55, ... Can be cleaned, and the cleaning effect can be enhanced.

【0019】また、噴射した洗浄液68を全てウェーハ
55、55、…に供給することができるので、従来のワ
イヤ列24に洗浄液68を供給する方式のものに比べ、
効率的に洗浄液68の供給をすることができ、短時間で
ウェーハ55、55、…の洗浄を行なうことができる。
Further, since all of the sprayed cleaning liquid 68 can be supplied to the wafers 55, 55, ..., Compared with the conventional system in which the cleaning liquid 68 is supplied to the wire row 24,
The cleaning liquid 68 can be efficiently supplied, and the wafers 55, 55, ... Can be cleaned in a short time.

【0020】[0020]

【発明の効果】以上説明したように、本発明によれば、
洗浄液を直接各ウェーハ間の溝内に向けて噴射するよう
にしたので、供給した洗浄液をウェーハの中心部まで入
り込ませることができる。これにより、ウェーハの中心
部まで洗浄することが可能になり、洗浄効果を高めさせ
ることができる。
As described above, according to the present invention,
Since the cleaning liquid is sprayed directly into the groove between the wafers, the supplied cleaning liquid can be introduced into the central portion of the wafer. As a result, the central portion of the wafer can be cleaned and the cleaning effect can be enhanced.

【0021】また、噴射した洗浄液を全てウェーハに供
給することができるので、従来のワイヤ列に洗浄液を供
給する方式のものに比べ、効率的に洗浄液の供給をする
ことができ、短時間で洗浄を行なうことができる。
Further, since all of the sprayed cleaning liquid can be supplied to the wafer, the cleaning liquid can be supplied more efficiently and cleaning can be performed in a shorter time as compared with the conventional method of supplying the cleaning liquid to the wire row. Can be done.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係るワイヤソーの実施例の全体構成図FIG. 1 is an overall configuration diagram of an embodiment of a wire saw according to the present invention.

【図2】図1の要部拡大図FIG. 2 is an enlarged view of a main part of FIG.

【図3】図2の斜視図FIG. 3 is a perspective view of FIG.

【図4】洗浄液供給ノズルの説明図FIG. 4 is an explanatory diagram of a cleaning liquid supply nozzle.

【符号の説明】[Explanation of symbols]

10…ワイヤソー 12、26…ワイヤリール 14…ワイヤ 18…ガイドローラ 22…溝付ローラ 24…ワイヤ列 40…加工液 60…回収皿 62…洗浄液供給ノズル 66…洗浄液貯留タンク 68…洗浄液 70…洗浄液供給ポンプ 10 ... Wire saw 12, 26 ... Wire reel 14 ... Wire 18 ... Guide roller 22 ... Grooved roller 24 ... Wire row 40 ... Machining liquid 60 ... Recovery dish 62 ... Cleaning liquid supply nozzle 66 ... Cleaning liquid storage tank 68 ... Cleaning liquid 70 ... Cleaning liquid supply pump

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 一対のワイヤリール間を往復走行するワ
イヤを複数個の溝付ローラに巻き掛けてワイヤ列を形成
し、該ワイヤ列に砥粒を含む加工液を供給しながら被加
工物を押し当ることにより該被加工物を多数のウェーハ
に切断するワイヤソーにおいて、 洗浄液を噴射するノズルを、前記被加工物の近傍で且つ
切断されたウェーハ間の溝内に洗浄液を噴射可能な位置
に設け、前記ワイヤ列により前記被加工物を多数のウェ
ーハに切断後、該ウェーハを走行するワイヤ列から引き
抜くときに、前記ノズルから各ウェーハ間の溝内に向け
て洗浄液を噴射することを特徴とするワイヤソー。
1. A wire row is formed by winding a wire that reciprocates between a pair of wire reels around a plurality of grooved rollers, and a workpiece is fed while a working liquid containing abrasive grains is supplied to the wire row. In a wire saw that cuts the workpiece into a large number of wafers by pressing, a nozzle for spraying the cleaning liquid is provided near the workpiece and in a position where the cleaning liquid can be sprayed into the groove between the cut wafers. After the workpiece is cut into a large number of wafers by the wire row, and when the wafer is pulled out from the traveling wire row, a cleaning liquid is sprayed from the nozzle toward the groove between the wafers. Wire saw.
JP14588795A 1995-06-13 1995-06-13 Wire saw Expired - Fee Related JP3075143B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14588795A JP3075143B2 (en) 1995-06-13 1995-06-13 Wire saw

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14588795A JP3075143B2 (en) 1995-06-13 1995-06-13 Wire saw

Publications (2)

Publication Number Publication Date
JPH08336829A true JPH08336829A (en) 1996-12-24
JP3075143B2 JP3075143B2 (en) 2000-08-07

Family

ID=15395354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14588795A Expired - Fee Related JP3075143B2 (en) 1995-06-13 1995-06-13 Wire saw

Country Status (1)

Country Link
JP (1) JP3075143B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011183503A (en) * 2010-03-08 2011-09-22 Takatori Corp Wire saw
EP2955745A1 (en) * 2014-06-11 2015-12-16 Applied Materials Switzerland Sàrl Wafer cleaning system
CN105216127A (en) * 2015-08-28 2016-01-06 厦门钨业股份有限公司 Multi-line cutting method and multi-line cutting machine
CN105479610A (en) * 2016-01-07 2016-04-13 金建华 Multi-wire sawing machine with take-up and pay-off cylinders vertically arranged
CN107030907A (en) * 2017-03-17 2017-08-11 浙江好亚能源股份有限公司 The processing method of polysilicon chip
CN109622478A (en) * 2019-01-31 2019-04-16 宁夏银和半导体科技有限公司 Cleaning device after crystal bar slice
CN112372862A (en) * 2020-11-12 2021-02-19 上海新昇半导体科技有限公司 Crystal bar workpiece plate and crystal bar cutting method
CN115534151A (en) * 2022-11-03 2022-12-30 浙江矽盛电子有限公司 Monocrystalline silicon rod manufacturing and cutting device for solar cell

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011183503A (en) * 2010-03-08 2011-09-22 Takatori Corp Wire saw
EP2955745A1 (en) * 2014-06-11 2015-12-16 Applied Materials Switzerland Sàrl Wafer cleaning system
CN105216131A (en) * 2014-06-11 2016-01-06 应用材料瑞士有限责任公司 Chip cleaning system, silk saw and the method for the wafer in clean silk saw
JP2016015481A (en) * 2014-06-11 2016-01-28 アプライド マテリアルズ スウィッツァーランド エス アー エール エル Wafer washing system
CN105216127A (en) * 2015-08-28 2016-01-06 厦门钨业股份有限公司 Multi-line cutting method and multi-line cutting machine
CN105479610A (en) * 2016-01-07 2016-04-13 金建华 Multi-wire sawing machine with take-up and pay-off cylinders vertically arranged
CN107030907A (en) * 2017-03-17 2017-08-11 浙江好亚能源股份有限公司 The processing method of polysilicon chip
CN109622478A (en) * 2019-01-31 2019-04-16 宁夏银和半导体科技有限公司 Cleaning device after crystal bar slice
CN112372862A (en) * 2020-11-12 2021-02-19 上海新昇半导体科技有限公司 Crystal bar workpiece plate and crystal bar cutting method
CN115534151A (en) * 2022-11-03 2022-12-30 浙江矽盛电子有限公司 Monocrystalline silicon rod manufacturing and cutting device for solar cell
CN115534151B (en) * 2022-11-03 2023-08-22 浙江矽盛电子有限公司 Cutting device for manufacturing monocrystalline silicon rod for solar cell

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