JPH08327448A - Small-sized infrared sensor and its manufacture - Google Patents
Small-sized infrared sensor and its manufactureInfo
- Publication number
- JPH08327448A JPH08327448A JP12990095A JP12990095A JPH08327448A JP H08327448 A JPH08327448 A JP H08327448A JP 12990095 A JP12990095 A JP 12990095A JP 12990095 A JP12990095 A JP 12990095A JP H08327448 A JPH08327448 A JP H08327448A
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- JP
- Japan
- Prior art keywords
- infrared
- infrared sensor
- small
- sensor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、赤外線集光用の光学系
を備えた小型赤外線センサ及びその製造方法に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a small infrared sensor having an optical system for collecting infrared light and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】図３の断面図に基づいて従来の小型赤外
線センサの一例について説明する。図で、１は素子基板
で、ダイアフラム部２ａが形成されたシリコン基板２
と、ダイアフラム部２ａ上に形成された赤外線検出素子
３とを備えている。４は、凹部４ａが形成されると共
に、その凹部４ａの底部にダイアフラム部４ｂが形成さ
れた封止用シリコン基板で、凹部４ａ内に赤外線検出素
子３が配置されるように、素子基板１に陽極接合により
接合されている。５は、封止用シリコン基板４の、凹部
４ａ形成面と反対側の面に形成された赤外線透過フィル
タである。2. Description of the Related Art An example of a conventional small infrared sensor will be described with reference to the sectional view of FIG. In the figure, reference numeral 1 is an element substrate, which is a silicon substrate 2 on which a diaphragm portion 2a is formed.
And an infrared detection element 3 formed on the diaphragm portion 2a. Reference numeral 4 denotes a sealing silicon substrate in which a recess 4a is formed and a diaphragm portion 4b is formed at the bottom of the recess 4a. The sealing silicon substrate 4 is provided on the element substrate 1 so that the infrared detecting element 3 is arranged in the recess 4a. Joined by anodic bonding. Reference numeral 5 denotes an infrared transmission filter formed on the surface of the sealing silicon substrate 4 opposite to the surface on which the recess 4a is formed.
【０００３】図３に示すように小型赤外線センサを構成
することによって、赤外線検出素子３を凹部４ａ内に封
止することができる。また、図３に示す小型赤外線セン
サは、赤外線透過フィルタ５、及び、赤外線透過窓とな
るダイアフラム部４ｂを介して、赤外線検出素子３に赤
外線が入射するように構成されていた。By constructing a small infrared sensor as shown in FIG. 3, the infrared detecting element 3 can be sealed in the recess 4a. Further, the small infrared sensor shown in FIG. 3 is configured such that infrared light enters the infrared detection element 3 via the infrared transmission filter 5 and the diaphragm portion 4b serving as an infrared transmission window.
【０００４】[0004]
【発明が解決しようとする課題】図３に示す構造の小型
赤外線センサでは、赤外線透過窓であるダイアフラム部
４ｂが平坦で、広角に赤外線を検知することができなか
ったため、図４に示すように、図３に示した小型赤外線
センサの前段に、赤外線を小型赤外線センサに集光す
る、広角レンズ６等の光学系を別途配置した赤外線セン
サのシステムを構成して対応していた。In the small infrared sensor having the structure shown in FIG. 3, the diaphragm portion 4b which is an infrared transmitting window is flat and cannot detect infrared rays in a wide angle. Therefore, as shown in FIG. The infrared sensor system in which an optical system such as a wide-angle lens 6 for condensing infrared rays on the small infrared sensor is separately arranged in front of the small infrared sensor shown in FIG.
【０００５】しかし、図４に示したような赤外線センサ
では、光学系が大きくなるため、赤外線センサの小型化
が図れないという問題点があった。また、光学系と小型
赤外線センサとのアセンブリを構築しなければならない
という問題点もあった。さらに、光学系を新たに付加す
ることで部品点数が増え、コスト高になるという問題点
もあった。However, the infrared sensor as shown in FIG. 4 has a problem in that the size of the infrared sensor cannot be reduced because the optical system becomes large. There is also a problem that an assembly of an optical system and a small infrared sensor has to be constructed. Furthermore, there is a problem in that the number of parts is increased by adding an optical system and the cost is increased.
【０００６】本発明は、上記問題点に鑑みなされたもの
で、その目的とするところは、広角に赤外線を検知でき
小型化が図れる小型赤外線センサの構造及びその小型赤
外線センサの製造方法を提供することにある。The present invention has been made in view of the above problems, and an object of the present invention is to provide a structure of a small infrared sensor which can detect infrared rays in a wide angle and can be miniaturized, and a manufacturing method of the small infrared sensor. Especially.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するた
め、請求項１記載の小型赤外線センサは、赤外線検出素
子を形成した素子基板に、凹部を形成した封止用シリコ
ン基板を接合して、前記赤外線検出素子を前記凹部内に
封止する小型赤外線センサにおいて、前記封止用シリコ
ン基板の一部分がレンズ状に形成されていることを特徴
とするものである。In order to achieve the above object, a small infrared sensor according to claim 1 is configured such that a silicon substrate for sealing having a concave portion is bonded to an element substrate having an infrared detecting element, A small infrared sensor for sealing the infrared detection element in the recess is characterized in that a part of the sealing silicon substrate is formed in a lens shape.
【０００８】請求項２記載の小型赤外線センサは、赤外
線検出素子を形成した素子基板と、その素子基板上に形
成され、前記赤外線検出素子をその内側の空間に封止す
るドーム状赤外線透過膜とを備えていることを特徴とす
るものである。According to a second aspect of the present invention, there is provided a miniature infrared sensor having an element substrate on which an infrared detecting element is formed, and a dome-shaped infrared transmissive film formed on the element substrate and sealing the infrared detecting element in a space inside thereof. It is characterized by having.
【０００９】請求項３記載の小型赤外線センサの製造方
法は、素子基板上の赤外線検出素子を覆うＰＳＧ膜を形
成する工程と、そのＰＳＧ膜を覆うドーム状赤外線透過
膜を形成する工程と、前記ドーム状赤外線透過膜に形成
された孔を介して前記ＰＳＧ膜を除去する工程と、所定
雰囲気中で前記孔を塞ぐ工程とを備えたことを特徴とす
るものである。According to a third aspect of the present invention, there is provided a method of manufacturing a small infrared sensor, which comprises forming a PSG film covering an infrared detecting element on an element substrate, forming a dome-shaped infrared transmitting film covering the PSG film, and The method is characterized by including a step of removing the PSG film through a hole formed in the dome-shaped infrared ray transmitting film and a step of closing the hole in a predetermined atmosphere.
【００１０】[0010]
【作用】請求項１記載の小型赤外線センサは、封止用シ
リコン基板の一部分をレンズ状に加工して、赤外線検出
素子に赤外線を広角に集光する光学系をセンサ部分と一
体化したことを特徴とするものである。In the small infrared sensor according to claim 1, a part of the sealing silicon substrate is processed into a lens shape, and an optical system for converging infrared rays in a wide angle is integrated in the infrared detecting element with the sensor part. It is a feature.
【００１１】また、請求項２記載の小型赤外線センサ
は、赤外線検出素子を形成した素子基板上に、赤外線検
出素子をその内側の空間に封止するドーム状赤外線透過
膜を形成して、赤外線検出素子に赤外線を広角に集光す
る光学系をセンサ部分と一体化したことを特徴とするも
のである。According to a second aspect of the present invention, in a small infrared sensor, an infrared detecting film is formed by forming a dome-shaped infrared transmitting film for sealing the infrared detecting element in a space inside the element substrate on which the infrared detecting element is formed. The device is characterized in that an optical system for condensing infrared rays at a wide angle is integrated with the sensor part.
【００１２】[0012]
【実施例】図１の断面図に基づいて本発明の小型赤外線
センサの一実施例について説明する。但し、図３に示し
た構成と同等構成については同符号を付すこととする。
図で、１は素子基板で、ダイアフラム部２ａが形成され
たシリコン基板２と、ダイアフラム部２ａ上に形成され
た赤外線検出素子３とを備えている。７は、凹部７ａが
形成されていると共に、その凹部７ａの底部がレンズ状
に加工された封止用シリコン基板である。以下、レンズ
状に加工された部分をレンズ部７ｂとして説明する。レ
ンズ部７ｂの加工は、例えば、研磨によって行う。ま
た、封止用シリコン基板７は、凹部７ａ内に赤外線検出
素子３が配置されるように、素子基板１に陽極接合され
ている。陽極接合は、例えば、真空中で、 400℃、1000
Ｖの条件で行われる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the small infrared sensor of the present invention will be described with reference to the sectional view of FIG. However, the same components as those shown in FIG. 3 are designated by the same reference numerals.
In the figure, reference numeral 1 denotes an element substrate, which includes a silicon substrate 2 having a diaphragm portion 2a formed thereon, and an infrared detection element 3 formed on the diaphragm portion 2a. Reference numeral 7 is a silicon substrate for sealing in which a recess 7a is formed and the bottom of the recess 7a is processed into a lens shape. Hereinafter, the lens-shaped portion will be described as the lens portion 7b. The lens portion 7b is processed, for example, by polishing. The sealing silicon substrate 7 is anodically bonded to the element substrate 1 so that the infrared detection element 3 is arranged in the recess 7a. Anodic bonding is performed, for example, in vacuum at 400 ° C and 1000
It is performed under the condition of V.
【００１３】図１に示すように小型赤外線センサを構成
することによって、赤外線検出素子３を凹部７ａ内に封
止することができ、マイクロレンズを一体化した小型の
赤外線センサを形成することができる。図１に示す小型
赤外線センサでは、赤外線透過窓となるレンズ部７ｂに
よって広角に赤外線を赤外線検出素子３に集光する。By configuring a small infrared sensor as shown in FIG. 1, the infrared detecting element 3 can be sealed in the recess 7a, and a small infrared sensor having a microlens integrated therein can be formed. . In the small-sized infrared sensor shown in FIG. 1, a wide-angle infrared light is focused on the infrared detection element 3 by the lens portion 7b serving as an infrared transmission window.
【００１４】次に、図２（ｅ）の断面図に基づいて本発
明の小型赤外線センサの異なる実施例について説明す
る。但し、図１に示した構成と同等構成については同符
号を付すこととする。図２（ｅ）で、１は素子基板で、
ダイアフラム部２ａが形成されたシリコン基板２と、ダ
イアフラム部２ａ上に形成された赤外線検出素子３と、
赤外線検出素子３及びシリコン基板１上に形成された、
シリコン酸化膜またはシリコン窒化膜で構成された保護
膜８とを備えている。また、９は、その内側の空間に赤
外線検出素子３を封止するドーム状赤外線透過膜、９ａ
はドーム状赤外線透過膜９の内部空間に通じる孔、１０
は孔９ａの外側開口を塞ぐ封止膜である。図２（ｅ）に
示す小型赤外線センサでは、ドーム状赤外線透過膜９に
よって広角に赤外線を赤外線検出素子３に集光すること
ができる。Next, a different embodiment of the small infrared sensor of the present invention will be described with reference to the sectional view of FIG. However, the same components as those shown in FIG. 1 are designated by the same reference numerals. In FIG. 2 (e), 1 is an element substrate,
A silicon substrate 2 having a diaphragm portion 2a formed thereon, an infrared detection element 3 formed on the diaphragm portion 2a,
Formed on the infrared detection element 3 and the silicon substrate 1,
The protective film 8 is made of a silicon oxide film or a silicon nitride film. Further, 9 is a dome-shaped infrared-transmissive film for sealing the infrared detection element 3 in the space inside thereof, 9a
Is a hole that communicates with the inner space of the dome-shaped infrared-transmissive film 9,
Is a sealing film that closes the outer opening of the hole 9a. In the small-sized infrared sensor shown in FIG. 2E, the infrared rays can be focused on the infrared detection element 3 in a wide angle by the dome-shaped infrared transparent film 9.
【００１５】次に、図２（ａ）〜（ｅ）に基づいて、図
２（ｅ）に示した小型赤外線センサの製造方法の一実施
例について説明する。図２（ａ）〜（ｅ）は製造工程を
示す断面図である。まず、（ａ）に示すように、赤外線
検出素子３を形成した素子基板１上に、シリコン酸化膜
またはシリコン窒化膜によって保護膜８を成膜する。続
いて、（ｂ）に示すように、赤外線検出素子３上の保護
膜８上に、赤外線検出素子３を覆うＰＳＧ膜１１を形成
する。ＰＳＧ膜１１は、略、片面平坦な凸レンズ状に研
磨されたレンズ部１１ａと、そのレンズ部１１ａの側方
に、レンズ部１１ａと一体に形成された突起部１１ｂと
を備えている。突起部１１ｂの形状は、次工程のドーム
状赤外線透過膜の成膜工程で、ドーム状赤外線透過膜を
構成する材料によって、完全に覆われてしまわない形状
に形成しておく。Next, an embodiment of a method of manufacturing the small infrared sensor shown in FIG. 2 (e) will be described with reference to FIGS. 2 (a) to 2 (e). 2A to 2E are cross-sectional views showing the manufacturing process. First, as shown in (a), a protective film 8 is formed of a silicon oxide film or a silicon nitride film on the element substrate 1 on which the infrared detection element 3 is formed. Subsequently, as shown in (b), a PSG film 11 that covers the infrared detection element 3 is formed on the protective film 8 on the infrared detection element 3. The PSG film 11 includes a lens portion 11a that is polished into a convex lens shape having a substantially flat surface on one side, and a projection portion 11b formed integrally with the lens portion 11a on the side of the lens portion 11a. The shape of the protrusions 11b is formed so as not to be completely covered by the material forming the dome-shaped infrared ray transmissive film in the next step of forming the dome-shaped infrared ray transmissive film.
【００１６】次に、（ｃ）に示すように、ＰＳＧ膜１１
上に、シリコン酸化膜またはシリコン窒化膜によってド
ーム状赤外線透過膜９を成膜する。さらに、（ｄ）に示
すように、孔９ａを介して、KOH 等のエッチング液によ
りＰＳＧ膜１１を除去する。最後に、（ｅ）に示すよう
に、孔９ａの外側開口を塞ぐ封止膜１０を、シリコン酸
化膜またはシリコン窒化膜を蒸着することによって形成
する。Next, as shown in (c), the PSG film 11
A dome-shaped infrared-transmissive film 9 is formed on the upper surface by a silicon oxide film or a silicon nitride film. Further, as shown in (d), the PSG film 11 is removed through the hole 9a by an etching solution such as KOH. Finally, as shown in (e), the sealing film 10 that closes the outer opening of the hole 9a is formed by depositing a silicon oxide film or a silicon nitride film.
【００１７】なお、封止用シリコン基板及びドーム状赤
外線透過膜は実施例に限定されるものではない。The encapsulating silicon substrate and the dome-shaped infrared transmitting film are not limited to the examples.
【００１８】[0018]
【発明の効果】請求項１記載の小型赤外線センサによれ
ば、封止用シリコン基板の一部分をレンズ状にマイクロ
加工することによって、赤外線を集光する光学系と赤外
線センサを一体化することができ、赤外線センサの小型
化が図れると共に、赤外線センサと光学系とのアセンブ
リを考慮する必要がなくなる。また、新たに光学系を必
要としないため、コストを抑えることができる。According to the small infrared sensor of the first aspect of the present invention, an optical system for condensing infrared rays and the infrared sensor can be integrated by microprocessing a part of the sealing silicon substrate into a lens shape. Therefore, the infrared sensor can be downsized, and it is not necessary to consider the assembly of the infrared sensor and the optical system. Moreover, since no new optical system is required, the cost can be suppressed.
【００１９】請求項２記載の小型赤外線センサ、また
は、請求項３記載の小型赤外線センサの製造方法によれ
ば、素子基板上に、赤外線検出素子を封止するドーム状
赤外線透過膜を形成したことにより、赤外線を集光する
光学系と赤外線センサを一体化することができ、赤外線
センサの小型化が図れると共に、赤外線センサと光学系
とのアセンブリを考慮する必要がなくなる。また、新た
に光学系を必要としないため、コストを抑えることがで
きる。According to the small infrared sensor of the second aspect or the method of manufacturing the small infrared sensor of the third aspect, a dome-shaped infrared transparent film for sealing the infrared detecting element is formed on the element substrate. As a result, the optical system for condensing infrared rays and the infrared sensor can be integrated, the infrared sensor can be downsized, and the assembly of the infrared sensor and the optical system need not be considered. Moreover, since no new optical system is required, the cost can be suppressed.
【図１】本発明の小型赤外線センサの一実施例を示す断
面図である。FIG. 1 is a sectional view showing an embodiment of a small infrared sensor of the present invention.
【図２】本発明の小型赤外線センサの製造方法の一実施
例を示す断面図である。FIG. 2 is a cross-sectional view showing an embodiment of a method for manufacturing a small infrared sensor according to the present invention.
【図３】従来の小型赤外線センサの一例を示す断面図で
ある。FIG. 3 is a sectional view showing an example of a conventional small infrared sensor.
【図４】従来の小型赤外線センサのシステムの一例を示
す断面図である。FIG. 4 is a sectional view showing an example of a system of a conventional small infrared sensor.
１ 素子基板 ３ 赤外線検出素子 ７ 封止用シリコン基板 ７ａ 凹部 ９ ドーム状赤外線透過膜 ９ａ 孔 １１ ＰＳＧ膜 DESCRIPTION OF SYMBOLS 1 Element substrate 3 Infrared detecting element 7 Silicon substrate for sealing 7a Recess 9 Dome-shaped infrared transparent film 9a Hole 11 PSG film
Claims (3)
凹部を形成した封止用シリコン基板を接合して、前記赤
外線検出素子を前記凹部内に封止する小型赤外線センサ
において、前記封止用シリコン基板の一部分がレンズ状
に形成されていることを特徴とする小型赤外線センサ。1. An element substrate on which an infrared detection element is formed,
In a small infrared sensor in which a sealing silicon substrate having a recess is bonded to seal the infrared detection element in the recess, a part of the sealing silicon substrate is formed in a lens shape. And a small infrared sensor.
その素子基板上に形成され、前記赤外線検出素子をその
内側の空間に封止するドーム状赤外線透過膜とを備えて
いることを特徴とする小型赤外線センサ。2. An element substrate on which an infrared detection element is formed,
A small infrared sensor, comprising: a dome-shaped infrared transparent film formed on the element substrate and sealing the infrared detecting element in a space inside thereof.
Ｇ膜を形成する工程と、そのＰＳＧ膜を覆うドーム状赤
外線透過膜を形成する工程と、前記ドーム状赤外線透過
膜に形成された孔を介して前記ＰＳＧ膜を除去する工程
と、所定雰囲気中で前記孔を塞ぐ工程とを備えたことを
特徴とする小型赤外線センサの製造方法。3. A PS covering an infrared detection element on an element substrate
A step of forming a G film, a step of forming a dome-shaped infrared transparent film covering the PSG film, a step of removing the PSG film through a hole formed in the dome-shaped infrared transparent film, and a predetermined atmosphere And a step of closing the hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12990095A JPH08327448A (en) | 1995-05-29 | 1995-05-29 | Small-sized infrared sensor and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12990095A JPH08327448A (en) | 1995-05-29 | 1995-05-29 | Small-sized infrared sensor and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08327448A true JPH08327448A (en) | 1996-12-13 |
Family
ID=15021163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12990095A Withdrawn JPH08327448A (en) | 1995-05-29 | 1995-05-29 | Small-sized infrared sensor and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08327448A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6288851B1 (en) | 1999-06-02 | 2001-09-11 | Mitsubishi Denki Kabushiki Kaisha | Optical semiconductor device with convergent lens |
| US6924485B2 (en) | 2001-10-01 | 2005-08-02 | Nec Corporation | Infrared ray detector having a vacuum encapsulation structure |
| JP2007171170A (en) * | 2005-11-25 | 2007-07-05 | Matsushita Electric Works Ltd | Method for manufacturing thermal type infrared sensing device |
| JP2007171174A (en) * | 2005-11-25 | 2007-07-05 | Matsushita Electric Works Ltd | Thermal type infrared sensing device and its manufacturing method |
| JP2014048109A (en) * | 2012-08-30 | 2014-03-17 | Ricoh Co Ltd | Far-infrared ray detector and manufacturing method of the same |
| KR20180045674A (en) * | 2016-10-26 | 2018-05-04 | 레이트론(주) | Omnidirectional Infrared Sensor Module |
-
1995
- 1995-05-29 JP JP12990095A patent/JPH08327448A/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6288851B1 (en) | 1999-06-02 | 2001-09-11 | Mitsubishi Denki Kabushiki Kaisha | Optical semiconductor device with convergent lens |
| US6924485B2 (en) | 2001-10-01 | 2005-08-02 | Nec Corporation | Infrared ray detector having a vacuum encapsulation structure |
| JP2007171170A (en) * | 2005-11-25 | 2007-07-05 | Matsushita Electric Works Ltd | Method for manufacturing thermal type infrared sensing device |
| JP2007171174A (en) * | 2005-11-25 | 2007-07-05 | Matsushita Electric Works Ltd | Thermal type infrared sensing device and its manufacturing method |
| JP2014048109A (en) * | 2012-08-30 | 2014-03-17 | Ricoh Co Ltd | Far-infrared ray detector and manufacturing method of the same |
| KR20180045674A (en) * | 2016-10-26 | 2018-05-04 | 레이트론(주) | Omnidirectional Infrared Sensor Module |
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