JPH0831788A - Method and apparatus for cleaning process of substrate - Google Patents
Method and apparatus for cleaning process of substrateInfo
- Publication number
- JPH0831788A JPH0831788A JP19005994A JP19005994A JPH0831788A JP H0831788 A JPH0831788 A JP H0831788A JP 19005994 A JP19005994 A JP 19005994A JP 19005994 A JP19005994 A JP 19005994A JP H0831788 A JPH0831788 A JP H0831788A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cleaning
- chemical
- inert gas
- chemical liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Photographic Processing Devices Using Wet Methods (AREA)
- Weting (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体デバイス製造
プロセス、液晶表示装置（ＬＣＤ）製造プロセス、電子
部品関連製造プロセスなどにおいて、シリコンウエハ、
ＬＣＤ用ガラス基板、電子部品等の各種基板の表面を洗
浄処理する方法、特に、基板の表面へ洗浄用薬液を吹付
け、噴霧等により供給して基板表面を洗浄する方法、並
びに、その方法を実施するのに使用される洗浄処理装置
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon wafer, a semiconductor device manufacturing process, a liquid crystal display (LCD) manufacturing process, a manufacturing process related to electronic parts, etc.
A method for cleaning the surface of various substrates such as glass substrates for LCDs and electronic parts, in particular, a method of spraying a cleaning chemical on the surface of the substrate and supplying the same by spraying, etc. It relates to a cleaning treatment device used for carrying out.
【０００２】[0002]
【従来の技術】シリコンウエハやガラス基板等の基板
を、洗浄用薬液を使用して湿式で洗浄処理するウェット
洗浄法としては、洗浄槽に貯留された洗浄用薬液中へ基
板を浸漬させて洗浄処理する方式と、基板の表面に洗浄
用薬液を吹付け、噴霧等により供給して洗浄処理する方
式とがある。このうち、前者の浸漬式洗浄法には、洗浄
目的別に洗浄槽から洗浄槽へと順次、キャリアに収容さ
れた複数枚の基板を移送しながら一連の洗浄処理を行な
うバッチ式多槽型浸漬法と、１つの洗浄槽内に複数枚の
基板を配置し、洗浄槽に複数種類の洗浄用薬液やリンス
用純水を順次入れ替えて一連の洗浄処理を行なうバッチ
式単槽型浸漬法とがあるが、何れの方法においても、単
位時間当りの処理枚数が多いといった長所があるもの
の、次のような欠点がある。すなわち、装置が大型化
し、洗浄用薬液を循環使用するために薬液の純度管理が
難しく、基板表面から除去されて薬液中に拡散した汚染
物質の再付着が起こり、基板の少数枚処理や一連の洗浄
処理時間の短縮化が困難であり、基板の大口径化への対
応が難しく、また、洗浄用薬液の濃度、温度、量等のパ
ラメータを正確に制御して高精度洗浄を行なうことが難
しい、などといった欠点がある。2. Description of the Related Art As a wet cleaning method for wet-cleaning a substrate such as a silicon wafer or a glass substrate by using a cleaning chemical, cleaning is performed by immersing the substrate in the cleaning chemical stored in a cleaning tank. There are a treatment method and a method of spraying a cleaning chemical on the surface of the substrate and supplying it by spraying or the like to perform the cleaning treatment. Among them, the former immersion-type cleaning method is a batch-type multi-tank immersion method in which a series of cleaning processes are performed while sequentially transferring a plurality of substrates housed in a carrier from cleaning tank to cleaning tank according to the purpose of cleaning. There is a batch type single tank type immersion method in which a plurality of substrates are arranged in one cleaning tank, and a plurality of types of cleaning chemicals and pure water for rinsing are sequentially replaced in the cleaning tank to perform a series of cleaning processes. However, all of the methods have the advantage that the number of processed sheets per unit time is large, but have the following drawbacks. That is, the size of the apparatus becomes large, and it is difficult to control the purity of the chemical solution because the cleaning chemical solution is circulated, and the contaminants that are removed from the surface of the substrate and diffused in the chemical solution are redeposited. It is difficult to shorten the cleaning process time, it is difficult to cope with larger substrate diameters, and it is difficult to precisely control parameters such as concentration, temperature, and amount of cleaning chemicals for high-precision cleaning. There are drawbacks such as.
【０００３】一方、基板の表面に洗浄用薬液を吹付け、
噴霧等により供給する洗浄法は、図５に概略構成を示し
たような装置により実施される。この基板の洗浄処理装
置は、基板Ｗを水平姿勢に保持するチャック10、このチ
ャック10を回転駆動させて基板Ｗを水平面内で鉛直軸回
りに回転させるモータ12、基板Ｗを保持するチャック10
を囲繞する内チャンバ14、この内チャンバ14を包囲する
外チャンバ16、基板Ｗの上面及び下面にそれぞれ洗浄用
薬液やリンス用超純水を供給する薬液供給ノズル18、18
などを備えている。内チャンバ14の底部には、ドレン管
20が連通接続されており、また、外チャンバ16には、排
気管22が連通接続されていて、ドレン管20及び排気管22
は、それぞれドレン及び排気装置（図示せず）に接続さ
れている。各薬液供給ノズル18は、それぞれ混合器24に
流路接続されており、混合器24は、それぞれ流路コント
ローラ26、28、30を介して、異なる種類の洗浄用薬液が
貯留された薬液タンク34、36、38に流路接続されている
とともに、流路コントローラ32を介して超純水供給源に
流路接続されている。尚、図示されていないが、内チャ
ンバ14及び外チャンバ16には、基板Ｗを出し入れするた
めの開口部及びシャッタがそれぞれ設けられている。On the other hand, spraying a cleaning chemical on the surface of the substrate,
The cleaning method of supplying by spraying or the like is carried out by an apparatus whose schematic configuration is shown in FIG. This substrate cleaning apparatus includes a chuck 10 for holding a substrate W in a horizontal position, a motor 12 for rotating the chuck 10 to rotate the substrate W around a vertical axis in a horizontal plane, and a chuck 10 for holding the substrate W.
An inner chamber 14 surrounding the inner chamber 14, an outer chamber 16 surrounding the inner chamber 14, and chemical liquid supply nozzles 18 and 18 for supplying a cleaning chemical liquid and ultrapure water for rinsing to the upper and lower surfaces of the substrate W, respectively.
And so on. At the bottom of the inner chamber 14, a drain pipe
20 is connected in communication, and an exhaust pipe 22 is connected in communication with the outer chamber 16, and the drain pipe 20 and the exhaust pipe 22 are connected.
Are connected to a drain and an exhaust device (not shown), respectively. Each chemical liquid supply nozzle 18 is connected to the mixer 24 by a flow path, and the mixer 24 is connected to the chemical liquid tank 34 in which different kinds of cleaning chemical liquids are stored via the flow path controllers 26, 28 and 30, respectively. , 36 and 38, and also to the ultrapure water supply source via the flow path controller 32. Although not shown, the inner chamber 14 and the outer chamber 16 are provided with an opening and a shutter for loading and unloading the substrate W, respectively.
【０００４】そして、図５に示した装置では、基板Ｗを
１枚ずつチャンバ14、16内に搬入してチャック10に保持
し、基板Ｗの表面に薬液供給ノズル18から洗浄用薬液や
リンス用超純水を吹き付けると同時に基板Ｗを回転させ
て洗浄処理する。この場合、図に示すように各種洗浄用
薬液や超純水を混合器24によって混合した後薬液供給ノ
ズル18から混合液を吐出するようにしてもよいし、多数
の専用ノズルを配設しておいて、各種薬液や超純水を基
板Ｗの表面へ同時供給するようにしてもよい。また、基
板Ｗの表面へ洗浄用薬液や超純水を勢い良く吹き付ける
ために、窒素ガス等の不活性ガスと一緒に薬液や超純水
を加圧して供給する場合もある。洗浄が終わった基板Ｗ
は、超純水によってリンス処理され、高速回転によって
乾燥処理された後、チャンバ14、16内から搬出され、次
の基板Ｗがチャンバ14、16内へ搬入される。このような
洗浄方法によれば、上記した浸漬法におけるような上記
諸欠点が改善される。In the apparatus shown in FIG. 5, the substrates W are loaded one by one into the chambers 14 and 16 and held by the chuck 10, and the surface of the substrate W is supplied from the chemical solution supply nozzle 18 for cleaning chemicals and rinses. At the same time as the ultrapure water is sprayed, the substrate W is rotated for cleaning. In this case, as shown in the figure, various cleaning chemicals or ultrapure water may be mixed by the mixer 24 and then the mixed solution may be discharged from the chemical solution supply nozzle 18, or a large number of dedicated nozzles may be provided. In addition, various chemicals or ultrapure water may be simultaneously supplied to the surface of the substrate W. Further, in order to forcefully spray the cleaning chemical solution or ultrapure water onto the surface of the substrate W, the chemical solution or ultrapure water may be pressurized and supplied together with an inert gas such as nitrogen gas. Substrate W after cleaning
After being rinsed with ultrapure water and dried by high-speed rotation, it is carried out from the chambers 14 and 16, and the next substrate W is carried into the chambers 14 and 16. According to such a cleaning method, the above-mentioned various drawbacks as in the above-mentioned dipping method are improved.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、図１に
示したような装置を使用し、基板の表面に洗浄用薬液を
供給して基板の洗浄を行なう方法では、基板を１枚ごと
処理するため全体としての処理時間が多くかかる、とい
った問題点がある。However, in the method of cleaning the substrate by using the apparatus shown in FIG. 1 and supplying the cleaning chemical to the surface of the substrate, the substrates are processed one by one. There is a problem that it takes a lot of processing time as a whole.
【０００６】また、基板の表面に供給されて洗浄に使用
された薬液中には、基板表面から除去された汚染物質が
溶け込んでいるため、使用済み薬液を基板上から速やか
に除去しないと、基板表面へ汚染物質が再付着してしま
うことになる。そこで、従来の洗浄方法では、基板の回
転数を極端に大きくすることにより、基板上の使用済み
薬液を遠心力で振り切って飛散させ易くしたり、また、
新鮮な洗浄用薬液を供給する圧力を高くすることによ
り、基板表面上の使用済み薬液を吹き飛ばすようにした
りしていた。しかしながら、このような方法では、新鮮
な洗浄用薬液の飛散が極めて多くなり、無駄な消費が増
えて、薬液使用量が多くなる、といった問題点があっ
た。尚、使用済み薬液を基板上から除去するときだけ基
板を高速回転させ、新鮮な洗浄用薬液を基板表面へ供給
するときには基板を低速回転或いは停止させる、といっ
たことも考えられるが、その場合には、基板回転時の加
速時間や減速時間などを含めると、全体として処理時間
が非常に長くなり、スループットが低下することにな
る。Further, since the contaminants removed from the substrate surface are dissolved in the chemical liquid supplied to the surface of the substrate and used for cleaning, the used chemical liquid must be promptly removed from the substrate unless the used chemical liquid is promptly removed. The contaminants will redeposit on the surface. Therefore, in the conventional cleaning method, by making the number of rotations of the substrate extremely large, it is possible to easily shake off the used chemical solution on the substrate by centrifugal force, and
By increasing the pressure for supplying a fresh cleaning chemical, the used chemical on the substrate surface is blown off. However, such a method has a problem in that the amount of fresh cleaning chemical liquid is extremely scattered, wasteful consumption increases, and the amount of chemical liquid used increases. It is also possible to rotate the substrate at a high speed only when the used chemical liquid is removed from the substrate and to rotate or stop the substrate at a low speed when supplying a fresh cleaning chemical liquid to the substrate surface. In that case, Including the acceleration time and the deceleration time at the time of rotating the substrate, the processing time becomes very long as a whole, and the throughput decreases.
【０００７】尚、基板の表面に洗浄用薬液を吹付け、噴
霧等により供給する洗浄法において、全体としての処理
時間を短縮化する方法として、複数枚の基板をバッチ式
で処理する方法が、〔Ｋｕｒｔ Ｃｈｒｉｓｔｅｎｓｏ
ｎ，Ｐｒｏｃｅｅｄｉｎｇｓｏｆ ｔｈｅ ｓｅｃｏｎ
ｄ ｉｎｔｅｒｎａｔｉｏｎａｌ ｓｙｍｐｏｓｉｕｍ
ｏｎ ｃｌｅａｎｉｎｇ ｔｅｃｈｎｏｌｏｇｙ ｉ
ｎ ｓｅｍｉｃｏｎｄｕｃｔｏｒ ｄｅｖｉｃｅ ｍａ
ｎｕｆａｃｔｕｒｉｎｇ，ｅｄｓ． Ｊ．Ｒｕｚｙｌｌ
ｏ ａｎｄ Ｒ． Ｅ． Ｎｏｖａｋ（Ｅｌｅｃｔｒｏ
ｃｈｅｍ．Ｓｏｃ．，Ｐｅｎｎｉｎｇｔｏｎ，１９９
２）９２−１２，ＰＰ．２８６−２９３〕に記載されて
いる。その方法では、複数枚の基板を収納したキャリア
を複数個、ターンテーブル上に固定し、回転中心位置に
配設されたスプレイノズルから洗浄用薬液や最終リンス
液を窒素ガスと一緒に各カセット内の基板に向けて放出
し、基板の洗浄が行なわれる。In a cleaning method in which a cleaning chemical is sprayed on the surface of a substrate and is supplied by spraying or the like, a method of processing a plurality of substrates in a batch system is a method for shortening the processing time as a whole. [Kurt Christianso
n, Proceedings of the second
d international symposium
on cleaning technology i
n semiconductor device ma
nufacturing, eds. J. Ruzyll
o and R. E. FIG. Novak (Electro
chem. Soc. , Pennington, 199
2) 92-12, PP. 286-293]. In that method, a plurality of carriers containing a plurality of substrates are fixed on a turntable, and a cleaning chemical solution and a final rinse solution are sprayed from a spray nozzle disposed at a rotation center position together with nitrogen gas into each cassette. Is discharged toward the substrate and the substrate is cleaned.
【０００８】しかしながら、この方法では、基板以外の
部分にも洗浄用薬液が放出されて飛散してしまい、薬液
の無駄な消費量が多くなる。また、基板をキャリアに収
納するため、そのキャリアから基板への薬液の撥ね返り
があり、また、キャリア保持用の構造材やチャンバ内壁
面などからの薬液の撥ね返りも多く、結果として汚染物
質の再付着が起こる。さらに、基板の表面へ確実に洗浄
用薬液が供給されにくく、また、薬液使用量を低減する
ことはできず、高精度洗浄にもならない、といった問題
点がある。However, according to this method, the cleaning liquid chemical is also discharged and scattered to portions other than the substrate, resulting in a large wasteful consumption of the liquid chemical. Further, since the substrate is housed in the carrier, the chemical liquid rebounds from the carrier to the substrate, and the chemical liquid repels much from the carrier-holding structural material and the chamber inner wall surface. Redeposition occurs. Further, there are problems that it is difficult to reliably supply the cleaning chemical to the surface of the substrate, the amount of chemical used cannot be reduced, and high-precision cleaning cannot be achieved.
【０００９】また、薬液使用量を低減させる方法とし
て、特開昭５１−１３２９７２号公報には、ノズルから
薬液を、基板上に表面張力によって液がこぼれずに乗る
分だけ滴下し、処理後は基板を回転させてこれを取り払
うようにする方法が開示されている。Further, as a method of reducing the amount of chemical solution used, Japanese Patent Laid-Open No. 132972/1975 discloses that a chemical solution is dropped from a nozzle by an amount such that the solution is not spilled on the substrate due to surface tension, and after the treatment. A method of rotating the substrate to remove it is disclosed.
【００１０】しかしながら、この方法では、汚染物質を
含んだ使用済み薬液が基板に接触している間に汚染物質
の再付着が起こる。また、基板と新鮮な薬液とを１回接
触させただけでは、汚染物質の付着量を一般的に要求さ
れる水準まで下げることは困難であり、このため、上記
操作を何回も繰り返す必要がある。したがって、結果的
には、それほど薬液使用量の低減にはならず、また、処
理時間も長くなる、といった問題点がある。However, in this method, reattachment of the contaminant occurs while the used chemical liquid containing the contaminant is in contact with the substrate. Further, it is difficult to reduce the amount of adhered contaminants to a generally required level by contacting the substrate with a fresh chemical solution only once. Therefore, it is necessary to repeat the above operation many times. is there. Therefore, as a result, there is a problem that the amount of chemical solution used is not reduced so much and the processing time becomes long.
【００１１】この発明は、以上のような事情に鑑みてな
されたものであり、基板の表面に洗浄用薬液を吹付け、
噴霧等により供給して基板の洗浄を行なう方法におい
て、従来問題点とされていたところの、全体としての処
理時間が多くかかり、薬液使用量が多くなる、といった
点を解決することを課題としてなされたものであって、
全体としての処理時間を従来に比べて短縮することがで
きるとともに、薬液使用量を少なくすることができ、基
板表面への汚染物質の再付着が起こる心配も無く、高精
度洗浄を可能とするような基板の洗浄処理方法、並び
に、その方法を実施するのに使用される洗浄処理装置を
提供することを目的とする。The present invention has been made in view of the above circumstances, and sprays a cleaning chemical onto the surface of a substrate,
In the method of cleaning the substrate by supplying it by spraying or the like, it has been made an object to solve the problems that have been conventionally considered as a problem, that it takes a lot of processing time as a whole and the amount of chemical solution used increases. It was
The processing time as a whole can be shortened compared with the conventional method, the amount of chemicals used can be reduced, and there is no concern that contaminants will reattach to the substrate surface, enabling high-precision cleaning. An object of the present invention is to provide a method for cleaning a substrate, and a cleaning apparatus used for carrying out the method.
【００１２】[0012]
【課題を解決するための手段】請求項１に記載された発
明に係る基板の洗浄処理方法では、基板の表面に洗浄用
薬液を供給して基板表面を洗浄するとともに、基板の表
面に不活性ガスを吹き付けて基板表面上から使用済み薬
液を除去するようにし、基板表面への洗浄用薬液の供給
と基板表面上からの使用済み薬液の除去とを短時間で連
続して行ない、その単位動作を繰り返すようにする。In the method of cleaning a substrate according to the present invention, the cleaning liquid is supplied to the surface of the substrate to clean the surface of the substrate and the surface of the substrate is inactive. The used chemical is removed from the surface of the substrate by spraying gas, and the cleaning chemical is supplied to the surface of the substrate and the used chemical is removed from the surface of the substrate continuously in a short time. Repeat.
【００１３】請求項２に記載された発明に係る基板の洗
浄処理方法では、基板を回転又は往復移動させながら、
基板表面上の所定回転または往復移動位置へ洗浄用薬液
を連続的に供給するとともに、基板表面上の別の回転ま
たは往復移動位置へ不活性ガスを連続的に吹き付けるよ
うにして、基板表面への洗浄用薬液の供給と基板表面上
からの使用済み薬液の除去とが短時間内で連続して行な
われるようにする。請求項３に記載された発明に係る基
板の洗浄処理方法では、基板表面上への洗浄用薬液の供
給位置及び基板表面上への不活性ガスの吹付け位置を、
それらの供給方向と吹付け方向とがぶつかり合わないよ
うにしてそれぞれ変更するようにする。In the method of cleaning a substrate according to the second aspect of the present invention, while rotating or reciprocating the substrate,
The cleaning chemical is continuously supplied to a predetermined rotation or reciprocal movement position on the substrate surface, and an inert gas is continuously blown to another rotation or reciprocation movement position on the substrate surface. The supply of the cleaning chemical solution and the removal of the used chemical solution from the substrate surface are continuously performed within a short time. In the method of cleaning a substrate according to the third aspect of the present invention, the supply position of the cleaning chemical liquid on the substrate surface and the spraying position of the inert gas on the substrate surface are
The supply direction and the spraying direction are changed so that they do not collide with each other.
【００１４】請求項４に記載された発明に係る基板の洗
浄処理方法では、基板を回転又は往復移動させながら、
基板表面上の所定回転または往復移動位置へ洗浄用薬液
を間欠的に供給するとともに不活性ガスを間欠的に吹き
付け、洗浄用薬液の供給と不活性ガスの吹付けとを交互
に繰り返すようにして、基板表面への洗浄用薬液の供給
と基板表面上からの使用済み薬液の除去とが短時間内で
連続して行なわれるようにする。請求項５に記載された
発明に係る基板の洗浄処理方法では、基板表面上への洗
浄用薬液の供給位置及び不活性ガスの吹付け位置を変更
するようにする。In the method of cleaning a substrate according to the fourth aspect of the present invention, while rotating or reciprocating the substrate,
The cleaning chemical is intermittently supplied to the predetermined rotation or reciprocating position on the surface of the substrate and the inert gas is intermittently sprayed, and the supply of the cleaning chemical and the spraying of the inert gas are alternately repeated. The supply of the cleaning chemical to the surface of the substrate and the removal of the used chemical from the surface of the substrate are continuously performed within a short time. In the method of cleaning a substrate according to the fifth aspect of the present invention, the supply position of the cleaning chemical liquid and the spraying position of the inert gas on the surface of the substrate are changed.
【００１５】請求項６に記載された発明に係る基板の洗
浄処理装置では、基板の表面に洗浄用薬液を連続的に供
給する薬液供給手段と、基板の表面に不活性ガスを連続
的に吹き付けて基板表面上から使用済み薬液を除去する
ガス吹付け手段とを備え、それらを、洗浄用薬液の供給
方向と不活性ガスの吹付け方向とぶつかり合わないよう
にそれぞれ配設する構成とした。According to a sixth aspect of the present invention, there is provided a substrate cleaning apparatus in which a cleaning solution is continuously supplied to the surface of the substrate and an inert gas is continuously sprayed onto the surface of the substrate. And a gas spraying means for removing the used chemicals from the surface of the substrate, and these are arranged so as not to collide with the supply direction of the cleaning chemicals and the spraying direction of the inert gas.
【００１６】請求項７に記載された発明に係る基板の洗
浄処理装置では、基板の表面に洗浄用薬液を間欠的に供
給するとともに不活性ガスを間欠的に吹き付ける吐出手
段と、この吐出手段からの洗浄用薬液の供給と不活性ガ
スの吹付けとが交互に繰り返されるように制御する吐出
制御手段とを備える構成とした。According to a seventh aspect of the present invention, there is provided a substrate cleaning apparatus, in which the cleaning chemical is intermittently supplied to the surface of the substrate and the inert gas is intermittently sprayed, and the discharging means. The discharge control means for controlling the supply of the cleaning chemical liquid and the spraying of the inert gas are alternately repeated.
【００１７】請求項８に記載された発明に係る基板の洗
浄処理装置では、基板を保持して回転又は往復移動させ
る基板保持駆動手段を設けるようにする。請求項９に記
載された発明に係る基板の洗浄処理装置では、薬液供給
手段及びガス吹付け手段を基板に対して相対的に移動可
能に配設したり、又は吐出手段を基板に対して相対的に
移動可能に配設する。In the substrate cleaning processing apparatus according to the eighth aspect of the present invention, the substrate holding driving means for holding the substrate and rotating or reciprocating the substrate is provided. In the substrate cleaning apparatus according to the invention described in claim 9, the chemical solution supplying means and the gas spraying means are arranged so as to be movable relative to the substrate, or the discharging means is arranged relative to the substrate. It is arranged to be movable.
【００１８】[0018]
【作用】請求項１に記載された発明に係る基板の洗浄処
理方法では、基板の表面に洗浄用薬液が供給された後、
それに連続して速やかに（短時間内に）基板の表面に不
活性ガスが吹き付けられて、基板表面上から使用済み薬
液が除去され、続いて基板の表面に新鮮な洗浄用薬液が
供給され、その後に基板表面への不活性ガスの吹付けに
よって基板表面上から使用済み薬液が除去される。以上
のような動作を繰り返すことにより、基板表面が洗浄さ
れる。したがって、基板の表面は、使用済み薬液と接触
する時間が短く常に新鮮な洗浄用薬液と接触したような
状態となるので、効率良く洗浄が行なわれ、このため、
１枚の基板の洗浄に要する時間が短くなる。また、基板
を極端に大きな回転数で回転させて、基板表面上の薬液
を遠心力で振り切って飛散させたり、洗浄用薬液の供給
圧を高めて、基板表面上の薬液を吹き飛ばしたりするの
でなく、不活性ガスを基板の表面に吹き付けて使用済み
薬液だけを基板表面上から除去するので、薬液が効率的
に使用され、洗浄効率が良いことも併せて、薬液の使用
量が少なくて済むようになる。さらに、汚染物質を含ん
だ使用済み薬液は、不活性ガスの吹付けによって速やか
に基板表面上から除去されるので、基板表面へ汚染物質
が再付着することが起こらない。したがって、汚染物質
を含んだ使用済み薬液が速やかに除去されることによっ
て、基板表面に対して反応性の高い新鮮な洗浄用薬液が
直接、効率よく接触することが可能となり洗浄効果を向
上できる。また、新鮮な洗浄用薬液は反応性が高く、基
板の表面はそのような新鮮な薬液と常に接触した状態で
洗浄処理されるので、煩雑な濃度管理を行なわなくて
も、基板間或いはロット間における処理の均一性が保た
れる。In the method of cleaning a substrate according to the invention described in claim 1, after the cleaning chemical is supplied to the surface of the substrate,
Continuously and rapidly (within a short time), the surface of the substrate is sprayed with an inert gas to remove the used chemical solution from the surface of the substrate, and then a fresh cleaning chemical solution is supplied to the surface of the substrate. After that, the used chemical liquid is removed from the surface of the substrate by spraying an inert gas onto the surface of the substrate. By repeating the above operation, the substrate surface is cleaned. Therefore, the surface of the substrate is in contact with the used chemical solution for a short time and is in a state where it is always in contact with a fresh cleaning chemical solution, so that the cleaning is efficiently performed.
The time required for cleaning one substrate is shortened. In addition, by rotating the substrate at an extremely large number of revolutions, the chemical liquid on the substrate surface is spun off by centrifugal force and scattered, or by increasing the supply pressure of the cleaning chemical liquid and blowing off the chemical liquid on the substrate surface. , The inert gas is sprayed on the surface of the substrate to remove only the used chemicals from the surface of the substrate, so that the chemicals are used efficiently and the cleaning efficiency is good, so the amount of chemicals used can be small. become. Further, since the used chemical liquid containing the contaminants is promptly removed from the substrate surface by spraying the inert gas, the contaminants do not redeposit on the substrate surface. Therefore, by quickly removing the used chemical containing contaminants, it is possible to directly and efficiently contact the fresh cleaning chemical having high reactivity with the surface of the substrate, thereby improving the cleaning effect. In addition, since the fresh cleaning chemicals are highly reactive and the surface of the substrate is cleaned while being in constant contact with such fresh chemicals, there is no need to perform complicated concentration control, and it is possible to carry out between substrates or lots. The uniformity of the treatment is maintained.
【００１９】請求項２に記載された発明に係る基板の洗
浄処理方法では、並びに請求項８に記載された発明に係
る基板の洗浄処理装置を使用して実施すると、基板を回
転又は往復移動させながら、基板表面上の所定回転また
は往復移動位置へ洗浄用薬液を連続的に供給するととも
に、基板表面上の別の回転または往復移動位置へ不活性
ガスを連続的に吹き付けるようにする。したがって、基
板が１回転または１往復移動する間に基板表面への洗浄
用薬液の供給と基板表面上からの使用済み薬液の除去と
が連続してそれぞれ１回ずつ行なわれることになる。According to the method for cleaning a substrate according to the invention described in claim 2, and when the apparatus for cleaning a substrate according to the invention described in claim 8 is used, the substrate is rotated or reciprocated. Meanwhile, the cleaning chemical is continuously supplied to a predetermined rotation or reciprocating position on the substrate surface, and the inert gas is continuously blown to another rotating or reciprocating position on the substrate surface. Therefore, while the substrate makes one revolution or one reciprocation, the supply of the cleaning chemical solution to the surface of the substrate and the removal of the used chemical solution from the surface of the substrate are successively performed once each.
【００２０】請求項３に記載された発明に係る基板の洗
浄処理方法では、並びに請求項６に記載された発明に係
る基板の洗浄処理装置を使用して実施すると、供給され
る洗浄用薬液と吹き付けられる不活性ガスとが基板表面
上においてぶつかり合うことなく洗浄処理が行なわれ
る。したがって、上記作用が確実に実現される。When the substrate cleaning treatment method according to the third aspect of the present invention and the substrate cleaning treatment apparatus according to the sixth aspect of the present invention are performed, the cleaning chemical liquid supplied is The cleaning process is performed without collision with the sprayed inert gas on the substrate surface. Therefore, the above-mentioned operation is surely realized.
【００２１】請求項４に記載された発明に係る基板の洗
浄処理方法では、並びに請求項７に記載された発明に係
る基板の洗浄処理装置を使用して実施すると、基板を回
転又は往復移動させながら、基板表面上の所定位置へ洗
浄用薬液を間欠的に供給するとともに不活性ガスを間欠
的に吹き付け、洗浄用薬液の供給と不活性ガスの吹付け
とを交互に繰り返すようにする。したがって、基板表面
上の同一位置において洗浄用薬液の供給と使用済み薬液
の除去とが繰り返し行なわれることになる。In the method of cleaning a substrate according to the invention described in claim 4, and when the apparatus for cleaning a substrate according to the invention of claim 7 is used, the substrate is rotated or reciprocated. Meanwhile, the cleaning chemical solution is intermittently supplied to the predetermined position on the substrate surface and the inert gas is intermittently sprayed, and the supply of the cleaning chemical solution and the spraying of the inert gas are alternately repeated. Therefore, the supply of the cleaning chemical solution and the removal of the used chemical solution are repeated at the same position on the substrate surface.
【００２２】請求項５に記載された発明に係る基板の洗
浄処理方法では、並びに請求項９に記載された発明に係
る基板の洗浄処理装置を使用して実施すると、基板表面
上への洗浄用薬液の供給位置や不活性ガスの吹付け位
置、あるいは洗浄用薬液、不活性ガスの吐出位置を変更
することができるようにする。したがって、洗浄処理の
均一性、特に基板の中心付近を含めた洗浄処理の均一性
を高めることができる。In the method for cleaning a substrate according to the invention described in claim 5, and when using the apparatus for cleaning a substrate according to the invention described in claim 9, it is possible to clean the substrate surface. It is possible to change the supply position of the chemical liquid, the spray position of the inert gas, or the discharge position of the cleaning chemical liquid and the inert gas. Therefore, the uniformity of the cleaning process, particularly the uniformity of the cleaning process including the vicinity of the center of the substrate can be improved.
【００２３】[0023]
【実施例】以下、この発明の好適な実施例について図面
を参照しながら説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described below with reference to the drawings.
【００２４】図１は、この発明に係る基板の洗浄処理方
法を実施するのに使用される装置の１例を示す概略構成
図である。この図１において、図５で使用した符号と同
一符号を付したものについては、上記した通りであり、
その説明を省略する。FIG. 1 is a schematic block diagram showing an example of an apparatus used for carrying out the substrate cleaning method according to the present invention. In FIG. 1, the same reference numerals as those used in FIG. 5 are the same as described above,
The description is omitted.
【００２５】この装置では、内チャンバ14内に配置され
る基板Ｗの上面及び下面にそれぞれ不活性ガス、例えば
窒素ガスを吹き付けるガス吹付けノズル40、40が設けら
れている。各ガス吹付けノズル40は、それぞれ流量コン
トローラ42、42を介して窒素ガス供給源44に流路接続さ
れている。In this apparatus, gas spray nozzles 40, 40 for spraying an inert gas, for example, nitrogen gas, are provided on the upper surface and the lower surface of the substrate W arranged in the inner chamber 14, respectively. Each of the gas spray nozzles 40 is connected to a nitrogen gas supply source 44 via a flow rate controller 42, 42, respectively.
【００２６】ガス吹付けノズル40は、その吹付け位置が
薬液供給ノズル18による洗浄用薬液の供給位置に対し角
度位置を違えるように配設されている。また、薬液供給
ノズル18及びガス吹付けノズル40は、それぞれを所定位
置に固定しておくようにしてもよいが、基板Ｗの中心付
近を含めた洗浄処理の均一性を高めるために、それぞれ
を基板Ｗの保持位置に対して相対的に移動可能に構成す
ることができる。この場合は、洗浄用薬液の供給方向と
不活性ガスの吹付け方向とがぶつかり合わないように、
各ノズルの形状や吐出条件などに対応させて移動方向や
移動のタイミングなどを最適に調節する必要がある。The gas spray nozzle 40 is arranged so that its spray position is different from the supply position of the cleaning chemical liquid by the chemical liquid supply nozzle 18 at an angular position. Further, although the chemical solution supply nozzle 18 and the gas spray nozzle 40 may be fixed at predetermined positions, respectively, in order to improve the uniformity of the cleaning process including the vicinity of the center of the substrate W, each of them is fixed. It can be configured to be movable relative to the holding position of the substrate W. In this case, make sure that the cleaning chemical supply direction and the inert gas spray direction do not collide,
It is necessary to optimally adjust the movement direction, the movement timing, etc. in accordance with the shape of each nozzle and the ejection conditions.
【００２７】また、薬液供給ノズル18からの洗浄用薬液
の供給においては、基板Ｗの表面形状や大きさ、ノズル
の型式などに応じ、基板Ｗの回転数、基板Ｗ表面への洗
浄用薬液の入射角度、洗浄用薬液の種類や供給量、供給
圧などの条件を、薬液供給時に基板Ｗ上からの薬液の飛
散が少なくなるように選定し、薬液供給ノズル18から吐
出された少量の洗浄用薬液が基板Ｗの表面上において有
効に洗浄のため使用されるようにする必要がある。尚、
薬液供給ノズル18としては、洗浄用薬液を液状で基板Ｗ
の表面へ吹き付けるような構成としてもよいし、洗浄用
薬液を霧状に噴霧して基板Ｗの表面へ供給するような構
成としてもよい。また、図示例のものでは、薬液供給ノ
ズル18から洗浄用薬液を吹き出すとともに、流路を切り
換えることによってリンス用の超純水を基板Ｗの表面へ
吹き付けることができるように構成されているが、リン
ス処理のための超純水専用ノズルを別に設けるようにし
てもよい。さらにまた、薬液による洗浄処理終了後に基
板Ｗを別のチャンバ内へ搬送し、その別のチャンバ内で
超純水リンス処理、乾燥処理を行なってもよい。Further, in supplying the cleaning chemical from the chemical supply nozzle 18, the rotation speed of the substrate W and the cleaning chemical on the surface of the substrate W are changed depending on the surface shape and size of the substrate W, the nozzle type, and the like. Conditions such as the incident angle, the type and supply amount of the cleaning liquid chemical, the supply pressure, etc. are selected so that the chemical liquid is less scattered from the substrate W during the chemical liquid supply, and the small amount of cleaning liquid ejected from the chemical liquid supply nozzle 18 is used. It is necessary to ensure that the chemical solution is effectively used on the surface of the substrate W for cleaning. still,
The chemical liquid supply nozzle 18 uses the cleaning chemical liquid in a liquid state on the substrate W.
The cleaning liquid may be sprayed onto the surface of the substrate W or may be sprayed onto the surface of the substrate W after being sprayed in a mist. Further, in the illustrated example, the cleaning liquid chemical is blown out from the liquid chemical supply nozzle 18, and the ultrapure water for rinsing can be sprayed onto the surface of the substrate W by switching the flow path. A nozzle for exclusive use of ultrapure water for the rinse treatment may be separately provided. Furthermore, the substrate W may be transferred into another chamber after the cleaning process with the chemical liquid is completed, and the ultrapure water rinsing process and the drying process may be performed in the other chamber.
【００２８】また、薬液供給ノズル18及びガス吹付けノ
ズル40のそれぞれの設置本数は、多くするほど洗浄処理
の均一性を向上させるのに有利であるが、それぞれ１本
だけでもよく、また、何れか一方を１本だけにして他方
を複数本としてもよい。Further, the greater the number of the chemical solution supply nozzle 18 and the number of the gas spray nozzle 40 installed, the more advantageous it is to improve the uniformity of the cleaning process, but it is also possible to use only one each, and either One may be only one and the other may be plural.
【００２９】上記した装置を使用して基板Ｗを洗浄処理
するには、基板Ｗを低速で回転させながら、図２に模式
的平面図を示すように、薬液供給ノズル18から少量の洗
浄用薬液を基板Ｗの表面へ供給する。このとき、洗浄用
薬液は、右下り斜線で示す範囲Ａ内に連続的に供給され
るが、基板Ｗが回転しているので、基板Ｗが１回転する
間に基板Ｗの全面に洗浄用薬液が供給されることにな
る。基板Ｗの表面に供給されて洗浄に使用された薬液
は、表面張力によって基板Ｗの表面に残留するが、基板
Ｗの回転動作に伴ってガス吹付けノズル40の配設位置へ
移動してくると、ガス吹付ノズル40から右上り斜線で示
す範囲Ｂへ窒素ガスが連続して吹き付けられることによ
り、使用済み薬液は基板Ｗの表面上から吹き飛ばされて
除去される。そして、窒素ガスの吹付けにより使用済み
薬液が除去されて基板Ｗ表面が露呈した部分は、基板Ｗ
の回転動作に伴って薬液供給ノズル18の配設位置へ移動
してくると、薬液供給ノズル18から新鮮な洗浄用薬液が
少量供給されて、その新鮮な薬液と接触する。このよう
に、基板Ｗの回転に伴い、新鮮な洗浄用薬液の供給→洗
浄処理→使用済み薬液の除去→新鮮な洗浄用薬液の供給
といった動作が連続して繰り返される。そして、基板Ｗ
の表面は、基板Ｗが１回転するごとに新鮮な洗浄用薬液
と接触することになるため、洗浄処理が速やかに進行す
る。また、薬液供給ノズル18から基板Ｗの表面へ供給さ
れる洗浄用薬液の量は必要最少限であり、処理時間が短
くなることと相俟って、洗浄用薬液の使用量が大幅に減
ることになる。さらに、使用済み薬液は、窒素ガスの吹
付けにより基板Ｗが１回転する前に基板Ｗ表面上から除
去されるので、使用済み薬液中に含まれる汚染物質が基
板Ｗの表面に再付着する可能性は殆んど無い。To clean the substrate W using the above-described apparatus, while rotating the substrate W at a low speed, as shown in the schematic plan view of FIG. Are supplied to the surface of the substrate W. At this time, the cleaning chemical is continuously supplied in the range A indicated by the diagonal line to the right, but since the substrate W is rotating, the cleaning chemical is applied to the entire surface of the substrate W during one rotation of the substrate W. Will be supplied. The chemical liquid supplied to the surface of the substrate W and used for cleaning remains on the surface of the substrate W due to surface tension, but moves to the arrangement position of the gas spray nozzle 40 as the substrate W rotates. Then, the nitrogen gas is continuously blown from the gas blowing nozzle 40 to the area B shown by the upper right diagonal line, whereby the used chemical liquid is blown off from the surface of the substrate W and removed. Then, the portion where the surface of the substrate W is exposed by removing the used chemical liquid by spraying nitrogen gas is the substrate W.
When the chemical liquid supply nozzle 18 is moved to the position where the chemical liquid supply nozzle 18 is disposed in accordance with the rotation operation of, the chemical liquid supply nozzle 18 supplies a small amount of fresh cleaning chemical liquid and comes into contact with the fresh chemical liquid. In this way, with the rotation of the substrate W, the operations of supplying a fresh cleaning chemical solution → cleaning process → removing the used chemical solution → supplying a fresh cleaning chemical solution are continuously repeated. And the substrate W
Since the surface of (1) comes into contact with a fresh cleaning chemical solution every time the substrate W makes one rotation, the cleaning process proceeds promptly. Further, the amount of the cleaning chemical liquid supplied from the chemical liquid supply nozzle 18 to the surface of the substrate W is the minimum necessary, and the processing time is shortened in combination with the drastic reduction of the amount of the cleaning chemical liquid used. become. Further, since the used chemical liquid is removed from the surface of the substrate W before the substrate W makes one rotation by blowing nitrogen gas, contaminants contained in the used chemical liquid can reattach to the surface of the substrate W. There is almost no sex.
【００３０】次に、この発明に係る基板の洗浄処理方法
に関して行なった実験例及びその結果について説明す
る。Next, description will be given of experimental examples and results of the experiments performed on the substrate cleaning method according to the present invention.
【００３１】実験ではサンプルとして、Ｎ−タイプ、６
インチ径のＳｉ−（１００）ウエハで、抵抗率１０〜１
５Ω・cmのものを用いた。洗浄用薬液としては、電子工
業用の３７％塩酸（（株）ナカライテスク製）を使用
し、それを純水１０3に対して１の割合で混合したもの
を用いた。サンプルウエハには、その表面に原子吸光分
析用の鉄標準液（（株）ナカライテスク製）を回転塗布
し、ウエハ表面における鉄汚染濃度の初期値が２×１０
13ａｔｏｍｓ／cm2となるように調製した。このサンプ
ルウエハを室温で、通常の浸漬法（薬液槽容量６，００
０ml）によって洗浄処理した場合、ウエハを回転させな
がら洗浄用薬液をウエハ表面へ供給する従来方法（基板
の回転数５００ｒｐｍ、薬液供給流量６０ml／分）によ
って洗浄処理（以下、「旧スピン洗浄」という）した場
合、並びに、この発明に係る方法（基板の回転数５００
ｒｐｍ、薬液供給流量６０ml／分、窒素ガス吹付け流量
１０Ｌ／分）によって洗浄処理（以下、「新スピン洗
浄」という）した場合のそれぞれについて、各洗浄時間
におけるウエハ表面の鉄汚染濃度を測定し、鉄汚染の除
去効果を比較した。鉄汚染濃度の測定は、フレームレス
原子吸光分析法によって行なった。In the experiment, N-type, 6 was used as a sample.
Inch Si- (100) wafer with resistivity of 10-1
The one with 5 Ω · cm was used. As the cleaning chemical liquid, 37% hydrochloric acid for electronic industry (manufactured by Nacalai Tesque, Inc.) was used, and the mixture was mixed at a ratio of 1 to 10 3 of pure water. An iron standard solution for atomic absorption analysis (manufactured by Nacalai Tesque, Inc.) was spin-coated on the surface of the sample wafer, and the initial value of the iron contamination concentration on the wafer surface was 2 × 10 5.
It was adjusted to 13 atoms / cm 2 . This sample wafer was allowed to stand at room temperature using a normal dipping method (chemical bath capacity: 600
0 ml), the cleaning treatment (hereinafter referred to as “old spin cleaning”) is performed by the conventional method of supplying the cleaning chemical to the surface of the wafer while rotating the wafer (substrate rotation speed 500 rpm, chemical supply flow rate 60 ml / min). ), And the method according to the present invention (the number of rotations of the substrate is 500).
The iron contamination concentration on the wafer surface at each cleaning time was measured for each cleaning process (hereinafter referred to as "new spin cleaning") with rpm, chemical solution supply flow rate of 60 ml / min, and nitrogen gas spraying flow rate of 10 L / min. , The effect of removing iron pollution was compared. The concentration of iron contamination was measured by flameless atomic absorption spectrometry.
【００３２】図４に実験結果を示したように、この発明
に係る新スピン洗浄によると、従来の旧スピン洗浄によ
った場合に比べて１／３以下の短い時間で、原子吸光分
析法の測定限界値に近い１×１０10ａｔｏｍｓ／cm2の
濃度以下まで鉄汚染を低減させることができた。As shown in the experimental results in FIG. 4, according to the new spin cleaning of the present invention, the atomic absorption spectrometry can be performed in a time shorter than 1/3 as compared with the conventional old spin cleaning. It was possible to reduce iron contamination to a concentration of 1 × 10 10 atoms / cm 2 or less close to the measurement limit value.
【００３３】上記した実施例では、薬液供給ノズル18か
ら基板表面へ連続的に洗浄用薬液を供給するとともに、
ガス吹付けノズル40から基板表面へ連続的に不活性ガス
を吹き付けるようにして、基板表面への洗浄用薬液の供
給と基板表面上からの使用済み薬液の除去とが短時間内
で連続して繰り返し行なわれるようにしたが、共通の吐
出ノズルから洗浄用薬液を基板表面へ間欠的に供給する
とともに不活性ガスを基板表面へ間欠的に吹き付けるよ
うにし、それらの動作を交互に繰り返すように制御する
構成としてもよい。この場合にも、吐出ノズルを移動可
能として、洗浄処理の均一性を向上させるようにするこ
とができる。このように共通の吐出ノズルから洗浄用薬
液と不活性ガスとを交互に吐出する構成としたときは、
装置の構成が若干簡単になり、また薬液使用量の多少低
減することになるが、洗浄処理に要する時間は、図４に
示した結果における旧スピン洗浄と新スピン洗浄との中
間程度になる。尚、共通の吐出ノズルから洗浄用薬液と
不活性ガスとを交互に吐出する装置では、図３に示すよ
うに、基板Ｗの回転中心位置にも薬液及びガスが当たる
ように幅広で均一に薬液やガスを吐出する型式の吐出ノ
ズル46を使用するとよい。In the above-mentioned embodiment, the cleaning chemical is continuously supplied from the chemical supply nozzle 18 to the surface of the substrate,
By supplying an inert gas continuously from the gas spray nozzle 40 to the substrate surface, the supply of the cleaning chemical solution to the substrate surface and the removal of the used chemical solution from the substrate surface are continuously performed within a short time. Although it is configured to be repeatedly performed, the cleaning chemical solution is intermittently supplied to the substrate surface from the common discharge nozzle, and the inert gas is intermittently sprayed to the substrate surface, and the operations are controlled to be alternately repeated. It may be configured to. Even in this case, the discharge nozzle can be moved to improve the uniformity of the cleaning process. When the cleaning chemical solution and the inert gas are alternately discharged from the common discharge nozzle in this way,
Although the configuration of the apparatus is slightly simplified and the amount of the chemical solution used is slightly reduced, the time required for the cleaning process is about the intermediate level between the old spin cleaning and the new spin cleaning in the result shown in FIG. In a device that alternately discharges the cleaning chemical liquid and the inert gas from the common discharge nozzle, as shown in FIG. 3, the chemical liquid and the gas are wide and uniform so that the rotation center position of the substrate W is also hit. It is preferable to use a discharge nozzle 46 of a type that discharges gas or gas.
【００３４】また、上記実施例では基板Ｗを回転させる
ようにしているが、基板を水平面内で揺動させるなどし
て往復移動させる構成としてもよい。尚、図１に示した
装置において、窒素ガス等の不活性ガスの代替として純
水から発生したスチームやドライエアーなどを使用する
ことも可能である。この場合には、洗浄処理に要する時
間が、図４に示した結果における旧スピン洗浄と新スピ
ン洗浄との中間位になる。Although the substrate W is rotated in the above embodiment, the substrate W may be reciprocated by oscillating in a horizontal plane. In the apparatus shown in FIG. 1, it is possible to use steam or dry air generated from pure water as a substitute for the inert gas such as nitrogen gas. In this case, the time required for the cleaning process is intermediate between the old spin cleaning and the new spin cleaning in the result shown in FIG.
【００３５】[0035]
【発明の効果】この発明は以上説明したように構成され
かつ作用するので、請求項１に記載された発明に係る基
板の洗浄処理方法では、従来法に比べて処理時間を短縮
してスループットを向上させるとともに、薬液使用量を
少なくして処理コストを低減させることができ、また、
洗浄後の基板表面への汚染物質の再付着を無くして処理
品質を向上させることができ、高精度洗浄が可能にな
る。Since the present invention is constructed and operates as described above, the substrate cleaning processing method according to the first aspect of the present invention shortens the processing time and improves the throughput as compared with the conventional method. In addition to improving, it is possible to reduce the treatment cost by reducing the amount of chemicals used.
It is possible to improve the processing quality by eliminating the reattachment of contaminants to the substrate surface after cleaning, and it is possible to perform highly accurate cleaning.
【００３６】請求項２に記載された発明に係る基板の洗
浄処理方法では、並びに請求項８に記載された発明に係
る基板の洗浄処理装置を使用して基板の洗浄処理を行な
うようにしたときは、基板が１回転または１往復移動す
る前に使用済みの洗浄用薬液が不活性ガスの吹き付けに
より基板表面上から除去されるので、使用済みの薬液中
に含まれる汚染物質の基板表面への再付着を防止でき
る。In the substrate cleaning method according to the second aspect of the present invention, and when the substrate cleaning process is performed using the substrate cleaning apparatus according to the eighth aspect of the present invention. Since the used cleaning chemical solution is removed from the surface of the substrate by spraying an inert gas before the substrate makes one rotation or one reciprocation, the contaminants contained in the used chemical solution to the substrate surface may be removed. Can prevent reattachment.
【００３７】請求項３に記載された発明に係る基板の洗
浄処理方法では、並びに請求項６に記載された発明に係
る基板の洗浄処理装置を使用して基板の洗浄処理を行な
うようにしたときは、供給される洗浄用薬液と吹き付け
られる不活性ガスとが基板表面上においてぶつかり合う
ことなく洗浄処理が行なわれる。したがって、上記効果
を確実に奏することができる。In the substrate cleaning method according to the third aspect of the present invention, and when the substrate cleaning process is performed by using the substrate cleaning apparatus according to the sixth aspect of the present invention. The cleaning process is performed without the supplied cleaning chemical liquid and the sprayed inert gas colliding with each other on the substrate surface. Therefore, the above effect can be reliably exhibited.
【００３８】請求項４に記載された発明に係る基板の洗
浄処理方法では、並びに請求項７に記載された発明に係
る基板の洗浄処理装置を使用して基板の洗浄処理を行な
うようにしたときは、簡単な構成で従来法に比べてより
改善された洗浄効果、即ち薬液使用量の低減と洗浄処理
に要する時間の短縮化を達成することができる。In the substrate cleaning method according to the fourth aspect of the present invention, and when the substrate cleaning process is performed by using the substrate cleaning apparatus according to the seventh aspect of the invention. With a simple structure, it is possible to achieve an improved cleaning effect as compared with the conventional method, that is, a reduction in the amount of chemicals used and a reduction in the time required for the cleaning process.
【００３９】請求項５に記載された発明に係る基板の洗
浄処理方法では、並びに請求項９に記載された発明に係
る基板の洗浄処理装置を使用して基板の洗浄処理を行な
うようにしたときは、洗浄処理の均一性、特に基板の中
心付近を含めた洗浄処理の均一性を高めることができ
る。In the method of cleaning a substrate according to the fifth aspect of the present invention, and when the substrate cleaning processing apparatus according to the ninth aspect of the present invention is used to perform the cleaning processing of the substrate. Can improve the uniformity of the cleaning process, especially the cleaning process including the vicinity of the center of the substrate.
【図１】この発明に係る基板の洗浄処理方法を実施する
のに使用される装置の構成の１例を示す概略図である。FIG. 1 is a schematic view showing an example of a configuration of an apparatus used for carrying out a substrate cleaning processing method according to the present invention.
【図２】この発明に係る基板の洗浄処理方法における洗
浄過程を説明するための模式平面図である。FIG. 2 is a schematic plan view for explaining a cleaning process in the substrate cleaning method according to the present invention.
【図３】薬液供給手段及びガス吹付け手段の別の構成例
を示す部分平面図である。FIG. 3 is a partial plan view showing another configuration example of the chemical liquid supply means and the gas spraying means.
【図４】この発明に係る基板の洗浄処理方法に関して行
なった実験例の結果を示すグラフ図である。FIG. 4 is a graph showing the results of an experimental example performed on the substrate cleaning method according to the present invention.
【図５】従来の洗浄処理方法を実施するのに使用される
装置の１例を示す概略構成図である。FIG. 5 is a schematic configuration diagram showing an example of an apparatus used for performing a conventional cleaning treatment method.
10 チャック 12 モータ 14 内チャンバ 16 外チャンバ 18 薬液供給ノズル 24 混合器 34、36、38 薬液タンク 40 ガス吹付けノズル 44 窒素ガス供給源 46 吐出ノズル Ｗ 基板 10 Chuck 12 Motor 14 Inner chamber 16 Outer chamber 18 Chemical solution supply nozzle 24 Mixers 34, 36, 38 Chemical solution tank 40 Gas spray nozzle 44 Nitrogen gas supply source 46 Discharge nozzle W substrate
フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/306 21/68 Ｒ Continuation of the front page (51) Int.Cl. 6 Identification code Office reference number FI technical display location H01L 21/306 21/68 R
Claims (9)
表面を洗浄する基板の洗浄処理方法において、 基板の表面に不活性ガスを吹き付けて基板表面上から使
用済み薬液を除去するようにし、 基板表面への洗浄用薬液の供給と基板表面上からの使用
済み薬液の除去とを短時間内で連続して行ない、その単
位動作を繰り返すことを特徴とする基板の洗浄処理方
法。1. A method for cleaning a substrate in which a cleaning chemical is supplied to the surface of the substrate to clean the surface of the substrate, wherein an inert gas is blown onto the surface of the substrate to remove the used chemical from the surface of the substrate. A method for cleaning a substrate, characterized in that supply of a cleaning liquid to the surface of the substrate and removal of a used liquid from the surface of the substrate are continuously performed within a short time, and the unit operation is repeated.
板表面上の所定回転または往復移動位置へ洗浄用薬液を
連続的に供給するとともに、基板表面上の別の回転位置
へ不活性ガスを連続的に吹き付ける請求項１記載の基板
の洗浄処理方法。2. The cleaning chemical is continuously supplied to a predetermined rotation or reciprocating position on the substrate surface while rotating or reciprocating the substrate, and an inert gas is continuously supplied to another rotating position on the substrate surface. The method of cleaning a substrate according to claim 1, wherein the cleaning treatment is performed by spraying the substrate.
び基板表面上への不活性ガスの吹付け位置を、洗浄用薬
液の供給方向と不活性ガスの吹付け方向とがぶつかり合
わないようにしてそれぞれ変更する請求項１又は請求項
２記載の基板の洗浄処理方法。3. The supply position of the cleaning chemical liquid on the surface of the substrate and the spraying position of the inert gas on the surface of the substrate are not in conflict with the supply direction of the cleaning chemical liquid and the spraying direction of the inert gas. The method for cleaning a substrate according to claim 1 or 2, wherein the method is changed as described above.
板表面上の所定回転または往復移動位置へ洗浄用薬液を
間欠的に供給するとともに不活性ガスを間欠的に吹き付
け、洗浄用薬液の供給と不活性ガスの吹付けとを交互に
繰り返す請求項１記載の基板の洗浄処理方法。4. A cleaning chemical is supplied to a predetermined rotation or reciprocating position on the surface of the substrate intermittently while the substrate is rotated or reciprocated, and an inert gas is intermittently sprayed to supply the cleaning chemical. The method for cleaning a substrate according to claim 1, wherein the spraying of an inert gas is alternately repeated.
び不活性ガスの吹付け位置を変更する請求項４記載の基
板の洗浄処理方法。5. The method of cleaning a substrate according to claim 4, wherein the supply position of the cleaning chemical liquid and the spraying position of the inert gas on the surface of the substrate are changed.
する薬液供給手段を備えた基板の洗浄処理装置におい
て、 基板の表面に不活性ガスを連続的に吹き付けて基板表面
上から使用済み薬液を除去するガス吹付け手段を、不活
性ガスの吹付け方向が前記薬液供給手段による洗浄用薬
液の供給方向とぶつかり合わないように配設したことを
特徴とする基板の洗浄処理装置。6. A cleaning processing apparatus for a substrate, comprising a chemical liquid supply means for continuously supplying a cleaning chemical liquid to the surface of the substrate, wherein an inert gas is continuously blown to the surface of the substrate and used from the surface of the substrate. A substrate cleaning apparatus, wherein the gas spraying means for removing the chemical liquid is arranged so that the spraying direction of the inert gas does not collide with the supply direction of the cleaning chemical liquid by the chemical liquid supply means.
表面を洗浄するようにした基板の洗浄処理装置におい
て、 基板の表面に洗浄用薬液を間欠的に供給するとともに不
活性ガスを間欠的に吹き付ける吐出手段を有し、 その吐出手段からの洗浄用薬液の供給と不活性ガスの吹
出しとが交互に繰り返されるように制御する吐出制御手
段を設けたことを特徴とする基板の洗浄処理装置。7. A substrate cleaning apparatus, wherein a cleaning chemical is supplied to the surface of the substrate to clean the surface of the substrate, wherein the cleaning chemical is intermittently supplied to the surface of the substrate and an inert gas is intermittently supplied. Cleaning processing of a substrate, characterized in that it has a discharge means for selectively spraying, and a discharge control means for controlling the supply of the cleaning chemical liquid and the discharge of an inert gas from the discharge means to be alternately repeated. apparatus.
基板保持駆動手段が設けられた請求項６又は請求項７記
載の基板の洗浄処理装置。8. The substrate cleaning apparatus according to claim 6 or 7, further comprising a substrate holding drive means for holding and rotating or reciprocating the substrate.
付け手段を基板に対して相対的に移動可能に配設した請
求項６、請求項７又は請求項８記載の基板の洗浄処理装
置。9. The substrate cleaning processing apparatus according to claim 6, wherein the discharge means or the chemical liquid supply means and the gas spraying means are arranged so as to be movable relative to the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19005994A JP3035450B2 (en) | 1994-07-19 | 1994-07-19 | Substrate cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19005994A JP3035450B2 (en) | 1994-07-19 | 1994-07-19 | Substrate cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0831788A true JPH0831788A (en) | 1996-02-02 |
| JP3035450B2 JP3035450B2 (en) | 2000-04-24 |
Family
ID=16251667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19005994A Expired - Fee Related JP3035450B2 (en) | 1994-07-19 | 1994-07-19 | Substrate cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3035450B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100362623B1 (en) * | 1998-03-13 | 2002-11-27 | 닛폰 덴키(주) | Process for Production of Semiconductor Device and Cleaning Device Used Therein |
| JP2008258212A (en) * | 2007-03-30 | 2008-10-23 | Nec Corp | Device and method for cleaning substrate |
| JP2008288604A (en) * | 1997-09-24 | 2008-11-27 | Interuniv Micro Electronica Centrum Vzw | Method and device for removing liquid from surface of rotating substrate |
| JP2009260094A (en) * | 2008-04-18 | 2009-11-05 | Disco Abrasive Syst Ltd | Spinner cleaning device and working device |
| JP2011009677A (en) * | 2009-05-28 | 2011-01-13 | Kyocera Corp | Semiconductor wafer treating method and semiconductor wafer drying device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101290527B1 (en) * | 2011-05-31 | 2013-07-30 | 주식회사 테스 | Substrate processing system and substrate processing method using the same |
-
1994
- 1994-07-19 JP JP19005994A patent/JP3035450B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008288604A (en) * | 1997-09-24 | 2008-11-27 | Interuniv Micro Electronica Centrum Vzw | Method and device for removing liquid from surface of rotating substrate |
| JP4634490B2 (en) * | 1997-09-24 | 2011-02-16 | アイメック | Method and apparatus for removing liquid from the surface of a rotating substrate |
| KR100362623B1 (en) * | 1998-03-13 | 2002-11-27 | 닛폰 덴키(주) | Process for Production of Semiconductor Device and Cleaning Device Used Therein |
| JP2008258212A (en) * | 2007-03-30 | 2008-10-23 | Nec Corp | Device and method for cleaning substrate |
| JP2009260094A (en) * | 2008-04-18 | 2009-11-05 | Disco Abrasive Syst Ltd | Spinner cleaning device and working device |
| JP2011009677A (en) * | 2009-05-28 | 2011-01-13 | Kyocera Corp | Semiconductor wafer treating method and semiconductor wafer drying device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3035450B2 (en) | 2000-04-24 |
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