JPH08316162A - Semiconductor producing apparatus - Google Patents

Abstract

PURPOSE: To produce high-performance semiconductor elements the quality of which is less dispersed, by making uniform the flow of a gas in a reaction chamber of a semiconductor producing apparatus, high-vacuum quick exhaustion and cleaning thereof. CONSTITUTION: A semiconductor producing apparatus comprises a double- structured reactor having a vacuum chamber 1 and reaction chamber 2 disposed therein, an entrance system 6 to feed a reactive gas into the chamber 2 contacted with the surface of a semiconductor wafer 5 isolated from the chamber 1, an entrance system 7 to feed an inert gas into the chamber with which the back side of the wafer 5 contacts, a semiconductor wafer heater disposed outside the chamber 2 and means for individually evacuating the chambers 1 and 2.

Description

Detailed Description of the Invention

[0001]

The present invention relates to an impurity diffusion device, CVD
The present invention relates to a semiconductor manufacturing device such as a device.

[0002]

2. Description of the Related Art A conventional semiconductor manufacturing apparatus is disclosed in Japanese Patent Laid-Open No. 4-349.
As described in Japanese Patent No. 623, a reaction chamber having a double structure is provided with one exhaust port, a sweep gas is caused to flow outside the reaction chamber, the reaction gas is caused to flow inside the reaction chamber, and a susceptor on which a semiconductor wafer is placed. A thin film was grown on the surface of the semiconductor wafer by heating and rotating.

[0003]

In the above-mentioned prior art, the exhaust ports of the vacuum chamber and the reaction chamber are combined on the downstream side of the exhaust gas, and the sweep gas enters the reaction chamber depending on the flow and pressure of the sweep gas. However, there is a problem in that the flow of the reaction gas is adversely affected, the flow of the reaction gas becomes non-uniform, and the film thickness distribution deteriorates. In order to prevent this, if the structure of the exhaust port of the reaction chamber is complicated, or if the distance from the wafer position of the reaction chamber to the exhaust port is sufficiently long, the reaction chamber becomes expensive and not only leads to the enlargement of the apparatus, but also Increasingly, high-vacuum, high-speed exhaust of gas becomes impossible.

Further, when the susceptor is heated by the heater, released gas is generated, a film deposited on the susceptor is peeled off and adhered to the semiconductor wafer, and particles are generated from the rotation driving unit, so that the semiconductor wafer Contamination may lead to a reduction in the yield of semiconductor devices.

An object of the present invention is to evacuate the vacuum chamber and the reaction chamber individually, to have only the wafer in the reaction chamber, and to dispose the wafer heating device outside the reaction chamber to ensure a uniform flow of the reaction gas. It is to secure and uniformize the film thickness, reduce the contamination of the semiconductor wafer, improve the film quality, enhance the performance of the semiconductor element, and suppress the variation in the performance.

Another object is to make the structure of the reaction chamber simple and inexpensive, shorten the distance from the wafer position of the reaction chamber to the exhaust port, and downsize the apparatus.

[0007]

In order to achieve the above object, the semiconductor manufacturing apparatus of the present invention, as shown in FIG.
A reaction chamber having a double structure including a reaction chamber 2 made of quartz is provided in a vacuum chamber 1 made of stainless steel, and the vacuum chamber 1 and the reaction chamber 2 are separated by a semiconductor wafer 5, and the surface of the semiconductor wafer 5 is in contact with the reaction chamber. Introducing system 6 for supplying a reaction gas to 2; introducing system 7 for supplying an inert gas to the outside of reaction chamber 2 in contact with the back surface of the semiconductor wafer; and a SiC sintered body provided outside reaction chamber 2 were used for the heater. A resistance heater 10 such as a SiC heater or a graphite heater coated with boron nitride except the terminal portion, and a temperature measuring element 11 such as a radiation thermometer or a thermocouple for measuring the radiation temperature of the semiconductor wafer 5.
And a power supply device 1 for controlling the output of the resistance heater 10 based on a radiation thermometer 11 or a temperature measuring element such as a thermocouple.
4 and means 8 and 9 for evacuating the reaction chamber 2 and the vacuum chamber 1 individually.

Further, as shown in FIG. 3, the vacuum chamber 1
A lamp house 21 provided with a reflection mirror was provided outside.

Alternatively, as shown in FIG. 5, a resistance heater 10 is provided outside the reaction chamber 2, and a lamp heating device 15 having a reflecting mirror coated with gold is provided outside the vacuum chamber 1.

[0010]

According to the present invention, by evacuating the vacuum chamber and the reaction chamber individually, the flow of the reaction gas is not affected by the sweep gas, so that a uniform flow can be maintained and a uniform film thickness can be obtained. To be Further, the gas can be exhausted easily and at high speed, so that the processing speed can be improved. Further, the reaction chamber has a simple structure and is inexpensive, and the distance from the wafer position in the reaction chamber to the exhaust port can be shortened, so that the apparatus can be downsized.

Alternatively, by providing a semiconductor wafer heating device outside the reaction chamber, contamination of the semiconductor wafer is eliminated. As a result, the performance of the semiconductor element can be improved and the yield can be improved.

[0012]

1 is a block diagram of a semiconductor manufacturing apparatus according to an embodiment of the present invention. 2 is a cross-sectional view of the semiconductor manufacturing apparatus of FIG. 1 as seen from the view shown by the line AA in FIG. 1
Is a vacuum chamber made of water-cooled stainless steel.
A reaction chamber 2 made of quartz is housed in the vacuum chamber 1. The vacuum chamber 1 and the reaction chamber 2 are O
Sealed by rings 3 and 4. The vacuum chamber 1 and the reaction chamber 2 are separated by a semiconductor wafer 5. In the reaction chamber 2, there is a reaction gas introduction system 6 for introducing a reaction gas. In the vacuum chamber 1, there is an inert gas introduction system 7 for introducing an inert gas. The reaction chamber 2 has a structure that can be exhausted by an exhaust system 8, and the vacuum chamber 1 has a structure that can be exhausted by an exhaust system 9. 10 is S using a SiC sintered body as a heater
The iC heater is a heating source for the semiconductor wafer 5. 1
1 is a radiation thermometer, which is a vacuum chamber 1 and an O-ring 12
Through the temperature measuring window 13 sealed by
A wafer heating device is configured with a power supply 14 that monitors the temperature of the back surface of the semiconductor wafer 5 and controls the input power of the SiC heater 10.

The semiconductor wafer 5 is transferred to a predetermined position on the reaction chamber 2, and the vacuum chamber 1 and the reaction chamber 2 are previously evacuated to 10 ^-7 Pa by the individual exhaust systems 8 and 9. For cleaning the semiconductor wafer 5 surface, the reaction of a carrier gas hydrogen (H ₂₎ was introduced 20SLM by the gas introduction system 6, the semiconductor wafer 5 for heating for 1 minute at 1000 ° C..
At this time, nitrogen (N ₂ ) gas is introduced by the inert gas introduction system 7 to eliminate the pressure difference between the vacuum chamber 1 and the reaction chamber 2. Thereafter, the reaction gas introducing system 6 is also used to carry out monosilane (SiH ₄ ), disilane (Si ₂ H ₆ ), diborane (B ₂ ).
H ₆ ), phosphine (PH ₃ ), or the like, or a gas composed of a combination thereof is introduced into the heater 1 at 10 SCCM.
By 0, the semiconductor wafer 5 is rapidly heated to diffuse impurities. After that, the supply of the reaction gas is stopped, the hydrogen purge is performed by the reaction gas introduction system 6, and the semiconductor wafer 5 is cooled. The supply of hydrogen is stopped and the exhaust system 8 performs rapid exhaust to take out the semiconductor wafer 5.

By individually evacuating the vacuum chamber 1 and the reaction chamber 2 in this manner, the flow of the reaction gas is not affected by the sweep gas, so that a uniform flow can be maintained and a uniform film thickness can be obtained. Obtainable. Moreover, since the distance from the semiconductor wafer 5 of the reaction chamber 2 to the exhaust port can be shortened, the apparatus can be downsized, and at the same time, the reaction chamber 2 has a simple structure and is inexpensive. Alternatively, by providing the SiC heater 10 outside the reaction chamber 2, it is possible to manufacture a semiconductor element with less contamination of the semiconductor wafer 5 and high performance.

FIG. 3 is an explanatory view showing another embodiment of the semiconductor manufacturing apparatus of the present invention, and FIG. 4 is a cross-sectional view of the semiconductor manufacturing apparatus as seen from the view indicated by line BB in FIG. Reference numeral 21 denotes a lamp house having a reflection mirror on which aluminum is vapor-deposited, which heats the wafer 5 through the ultraviolet ray transmitting window 17 sealed by the vacuum chamber 1 and the O-ring 16, and the main body is water-cooled. A long heating lamp 20 is attached to the lamp house 21. A power source 19 monitors the temperature of the wafer 5 and controls the input power of each lamp of the lamp 20.

In this apparatus, for example, a monosilane gas and a laughing gas are used as a reaction gas, the wafer temperature is set to 150 ° C., and a silicon oxide film is formed on a semiconductor wafer by ultraviolet rays 185 nm from a low pressure mercury lamp 20. .

In this way, by vacuum-evacuating the vacuum chamber 1 and the reaction chamber 2 individually, no film is deposited on the back surface of the semiconductor wafer 5 or the ultraviolet transmission window 17. Therefore, the radiation thermometer 11 can accurately measure the temperature, the variation in the performance of the semiconductor element can be suppressed, and the ultraviolet ray transmitted through the ultraviolet ray transmission window 17 is not reduced, so that the semiconductor element can be efficiently manufactured. .

FIG. 5 is an explanatory view showing another embodiment of the semiconductor manufacturing apparatus of the present invention, and FIG. 6 is a sectional view of the semiconductor manufacturing apparatus of FIG. 5 seen from the view shown by line C--C in FIG. Is.
Although not shown in FIGS. 5 and 6, since a film is easily attached to the high temperature portion and the low temperature portion, the vacuum chamber 1 is heated by a sheath heater (hot wall type) and the reaction chamber 2 is heated by thermal equilibrium to 150 ° C. It is kept at The part touched by the operator is wrapped with heat insulating material. Reference numeral 15 denotes a lamp heating device equipped with a gold-coated aluminum alloy reflection mirror, which is a high-temperature heating source for the wafer 5 through the infrared chamber window 17 sealed by the vacuum chamber 1 and the O-ring 16, and the main body is It is water cooled. A long heating lamp 18 is attached to the device 15. Reference numeral 19 is a power source that monitors the temperature of the wafer 5 and controls the input power of the SiC heater 10 and the input power of each lamp of the lamp 18.

The semiconductor wafer 5 is placed in the vacuum chamber 1 of the reaction chamber.
Of the reaction chamber 2 and the vacuum chamber 1 are previously evacuated to 10 ⁻⁷ Pa by the respective exhaust systems 8 and 9, and then an inert gas (N ₂ ) is evacuated to the vacuum chamber. 1 to supply the semiconductor wafer 5 to the heater 10
Heating to 600 ° C. and reacting gas (SiH ₄ , N ₂
O) is supplied, and an insulating film (SiO ₂ ) is formed by CVD. After the film formation, stop the supply of inert gas and reaction gas,
Perform quick exhaust. Next, the composition of the reaction gas is changed, and at the same time, the heating lamp 18 is used for high speed (200 ° C./sec)
Heat treatment (annealing) is performed. This CVD and high-speed high-temperature heat treatment are repeated, and the composition of the reaction gas is changed for each treatment to form a laminated film. Thereafter, the semiconductor wafer 5 is cooled and returned from the reaction chamber to the load lock chamber, and the process of forming the ultra-thin laminated insulating film is completed.

By individually evacuating the vacuum chamber 1 and the reaction chamber 2 in this way, the inside of the reaction chamber 2 can be evacuated at high vacuum and high speed, and the composition of the reaction gas can be easily changed. Therefore, a high-quality laminated film can be formed with high throughput. Further, a resistance heater 10 for heating the semiconductor wafer 5 at the time of CVD is provided in the reaction chamber.
By providing the lamp heating device 15 for heating during annealing, two heat treatments of CVD and annealing can be performed at high speed and with high accuracy.

[0021]

The semiconductor manufacturing apparatus such as the impurity diffusion apparatus and the CVD apparatus according to the present invention can maintain the uniform flow of the reaction gas by individually evacuating the vacuum chamber and the reaction chamber. Can be obtained. Further, the apparatus can be downsized and the gas can be evacuated at high vacuum and high speed, and the processing speed can be improved. Alternatively, it is possible to accurately control the temperature of the semiconductor wafer, suppress variations in the performance of the semiconductor element, and prevent the efficiency of lamp heating from decreasing.

Further, by disposing the wafer heating device outside the reaction chamber, it is possible to manufacture a semiconductor element having a high performance with less contamination of the wafer with high yield.

[Brief description of drawings]

FIG. 1 is an explanatory diagram of a semiconductor manufacturing apparatus such as an impurity diffusion apparatus and a CVD apparatus showing an embodiment.

FIG. 2 is a cross-sectional view of the semiconductor manufacturing apparatus viewed from the view shown by line AA in FIG.

FIG. 3 is an explanatory view of a semiconductor manufacturing apparatus showing a second embodiment of the present invention.

FIG. 4 is a cross-sectional view of the semiconductor manufacturing apparatus as viewed from the view shown by line BB in FIG.

FIG. 5 is an explanatory view of a semiconductor manufacturing apparatus showing a third embodiment of the present invention.

6 is a cross-sectional view of the semiconductor manufacturing apparatus as viewed from the view shown by the line C-C in FIG.

[Explanation of symbols]

1 ... Vacuum chamber, 2 ... Reaction chamber, 3, 4, 12 ...
O-ring, 5 ... Semiconductor wafer, 6 ... Gas introduction system, 7 ... Inert gas introduction system, 8, 9 ... Exhaust system, 10 ... Heater, 11
... Radiation thermometer, 13 ... Temperature measurement window, 14 ... Power supply.

Front page continuation (72) Inventor Masafumi Kaneto 1-280 Higashi Koikeku, Kokubunji, Tokyo Inside Central Research Laboratory, Hitachi, Ltd. (72) Inventor Masaru Matsushima 1-280 Higashi Koikeku, Kokubunji, Tokyo Hitachi Central Research Co., Ltd. In-house (72) Inventor Tadao Ino 1-280, Higashi Koigokubo, Kokubunji, Tokyo Inside the Central Research Laboratory, Hitachi, Ltd.

Claims (2)

[Claims] 1. A vacuum chamber made of stainless steel, and a reaction chamber made of quartz in the vacuum chamber.
A reaction chamber having a heavy structure, the vacuum chamber and the reaction chamber are separated by a semiconductor wafer, and means for supplying a reaction gas into the reaction chamber in contact with the front surface of the semiconductor wafer and the reaction in contact with the back surface of the semiconductor wafer. Semiconductor manufacturing comprising: means for supplying an inert gas to the outside of the chamber; the semiconductor wafer heating device provided outside the reaction chamber; and means for individually evacuating the vacuum chamber and the reaction chamber. apparatus. 2. The semiconductor wafer heating device according to claim 1, wherein the back surface of the semiconductor wafer is heated by a resistance heater provided outside the reaction chamber, the temperature is measured, and the front surface of the semiconductor wafer is heated. And a means for heating with a lamp provided outside the vacuum chamber.