JPH08309576A - Laser beam machining method - Google Patents
Laser beam machining methodInfo
- Publication number
- JPH08309576A JPH08309576A JP7114167A JP11416795A JPH08309576A JP H08309576 A JPH08309576 A JP H08309576A JP 7114167 A JP7114167 A JP 7114167A JP 11416795 A JP11416795 A JP 11416795A JP H08309576 A JPH08309576 A JP H08309576A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- processing stage
- holes
- processing
- suction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、貫通孔の明けられた可
とう性基板などの上に形成された薄膜をパターニングす
るためのレーザ加工方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser processing method for patterning a thin film formed on a flexible substrate having a through hole.
【０００２】[0002]
【従来の技術】原料ガスのグロー放電分解や光ＣＶＤに
より形成されるアモルファスシリコン(以下ａ−Ｓｉ)
などの非晶質半導体薄膜は、気相成長法で形成できるた
めに、大面積化が容易であること、また、形成温度が低
いために樹脂のような可とう性を有する基板上に形成で
きるという特徴を有している。このような非晶質半導体
を使用する代表的な薄膜素子として、薄膜太陽電池があ
る。薄膜太陽電池は、結晶太陽電池に比べ、基板面上で
容易に直列接続構造が形成できるという優れた特徴を有
している。2. Description of the Related Art Amorphous silicon (hereinafter a-Si) formed by glow discharge decomposition of a raw material gas or photo CVD
Since an amorphous semiconductor thin film such as can be formed by a vapor phase growth method, it can be easily formed into a large area, and can be formed on a flexible substrate such as a resin due to a low formation temperature. It has the characteristics of A thin film solar cell is a typical thin film element using such an amorphous semiconductor. The thin-film solar cell has an excellent feature that a series connection structure can be easily formed on the substrate surface as compared with a crystalline solar cell.
【０００３】薄膜太陽電池の直列接続構造は、基板の一
面上に形成した非晶質半導体層およびその両面に接する
電極層よりなる単位太陽電池の一方の電極層の延長部が
隣接単位太陽電池の他方の電極層に接触させることによ
りでき上がる。そこで、基板上の非晶質半導体層および
両電極層を、単位太陽電池への分離および単位太陽電池
間の接続形成のために、レーザ加工によってパターニン
グを行う。In a series connection structure of thin film solar cells, an extension of one electrode layer of a unit solar cell composed of an amorphous semiconductor layer formed on one surface of a substrate and electrode layers in contact with both surfaces of the amorphous semiconductor layer It is completed by bringing it into contact with the other electrode layer. Therefore, the amorphous semiconductor layer and both electrode layers on the substrate are patterned by laser processing for separation into unit solar cells and formation of connection between unit solar cells.
【０００４】しかし、薄膜太陽電池の光の入射側に存在
する電極層は、透明であることが必要である。透明導電
材料よりなるこの透明電極層は、シート抵抗が大きいた
め、電流が透明電極層を流れることによる電力損失が大
きくなってしまう。特開平６−３４２９２４号公報によ
り公知の薄膜太陽電池は、絶縁性の可とう性基板に穴を
あけ、この穴を利用して基板表面上の両電極層をそれぞ
れ基板裏面の接続電極層と接続し、この接続電極層によ
り集電および単位太陽電池間の接続を行うことにより、
高シート抵抗の透明電極層を流れる電流の径路を短縮し
て電力損失を低減している。However, the electrode layer on the light incident side of the thin film solar cell needs to be transparent. Since this transparent electrode layer made of a transparent conductive material has a large sheet resistance, a power loss due to a current flowing through the transparent electrode layer becomes large. The thin-film solar cell known from Japanese Patent Laid-Open No. 6-342924 has a hole formed in an insulating flexible substrate, and the two electrode layers on the front surface of the substrate are connected to the connection electrode layers on the back surface of the substrate using the holes. Then, by connecting and collecting between the unit solar cells by this connection electrode layer,
The path of the current flowing through the transparent electrode layer having a high sheet resistance is shortened to reduce the power loss.
【０００５】[0005]
【発明が解決しようとする課題】可とう性基板上の高品
質な薄膜のパターニングのためにレーザ加工を行うに
は、基板を±0.１ｍｍ以内の平坦度で保持しなければな
らない。従来は、このような保持を、基板を平坦な加工
ステージ上に真空吸着することによって実現していた。
しかし、穴のあいた基板を真空吸着すると、基板にあい
た穴の部分からの空気漏れのため、加工ステージに基板
が密着せず、基板の平坦度が悪くなる。平坦度が悪い
と、加工距離のずれ幅が大きく、加工幅がばらつくとい
う問題があった。また、ステンレス鋼あるいはアルミニ
ウム合金のような金属よりなる加工ステージは、レーザ
加工時にレーザ光により損傷され、表面に凹凸が生ず
る。このような凹凸のある基板表面は、可とう性基板基
板であるフィルムを傷つけやすいという問題があった。In order to perform laser processing for patterning a high quality thin film on a flexible substrate, the substrate must be held with a flatness within ± 0.1 mm. Conventionally, such holding has been realized by vacuum suction of the substrate on a flat processing stage.
However, when a substrate with holes is vacuum-sucked, air leaks from the holes in the substrate, so that the substrate does not adhere to the processing stage and the flatness of the substrate deteriorates. When the flatness is poor, there is a problem that the deviation of the processing distance is large and the processing width varies. Further, the processing stage made of metal such as stainless steel or aluminum alloy is damaged by laser light during laser processing, resulting in unevenness on the surface. The surface of the substrate having such irregularities has a problem that the film, which is a flexible substrate, is easily damaged.
【０００６】本発明の目的は、上述の問題を解決するこ
とにあり、第一の目的は穴のあいた基板を真空吸着によ
り加工ステージ上に平坦に保持するレーザ加工方法、第
二の目的はレーザ光によって加工ステージが損傷を受け
ることのないレーザ加工方法を提供することにある。An object of the present invention is to solve the above-mentioned problems. A first object is a laser processing method for holding a substrate having holes flat on a processing stage by vacuum suction, and a second object is a laser processing method. It is to provide a laser processing method in which a processing stage is not damaged by light.
【０００７】[0007]
【課題を解決するための手段】上記の第一の目的を達成
するために、請求項１ほかに記載の本発明は、貫通孔の
明けられた可とう性基板を加工ステージ表面上に加工ス
テージに分散して明けられた複数の吸引孔から真空吸引
により固定して基板上に形成した薄膜をレーザ光によっ
て加工する方法において、可とう性基板の貫通孔が加工
ステージの吸引孔に重ならない位置に停止して吸引する
ものとする。その場合、加工ステージに吸引孔が等間隔
の平行な列をなして明けられ、基板の貫通孔が加工ステ
ージの吸引孔の列間隔の整数倍の間隔で平行な列をなし
て明けられ、基板を加工ステージ上に、双方の列方向が
平行でかつ列が重ならない位置に停止して真空吸引する
ことが良い。請求項３に記載の別の本発明は、貫通孔の
明けられた可とう性基板を加工ステージ表面上に加工ス
テージに分散して明けられた複数の吸引孔からの真空吸
引により固定して基板上に形成した薄膜をレーザ光によ
って加工する方法において、可とう性基板をレーザ光に
対して透明な可とう性板と加工ステージの間に挟着して
真空吸引することにより基板を透明板と共に加工ステー
ジ上に固定するものとする。上述の第二の目的を達成す
るために、請求項４ほかに記載のさらに別の本発明は、
可とう性基板を加工ステージ表面上に加工ステージに分
散して明けられた複数の吸引孔からの真空吸引により固
定して基板上に形成した薄膜をレーザ光により加工する
方法において、加工ステージの少なくとも表面層がレー
ザ光を吸収しない耐熱性樹脂よりなるものとする。この
耐熱性樹脂は白色であっても透明であってもよい。In order to achieve the above-mentioned first object, the present invention as set forth in claim 1 and others is directed to a processing stage in which a flexible substrate having a through hole is formed on the processing stage surface. The position where the through hole of the flexible substrate does not overlap with the suction hole of the processing stage in the method of processing the thin film formed on the substrate fixed by vacuum suction from the plurality of suction holes dispersed and opened Shall stop and aspirate. In that case, the suction holes are opened in parallel rows at equal intervals on the processing stage, and the through holes of the substrate are opened in parallel rows at an integer multiple of the row intervals of the suction holes at the processing stage. It is advisable to stop on a processing stage at a position where both rows are parallel to each other and the rows do not overlap each other, and vacuum suction is performed. According to another aspect of the present invention, a flexible substrate having through holes formed therein is fixed on a surface of a processing stage by vacuum suction from a plurality of suction holes formed by being dispersed in the processing stage. In the method of processing the thin film formed above with a laser beam, the flexible substrate is sandwiched between a flexible plate transparent to the laser beam and the processing stage and vacuum suction is applied to the substrate together with the transparent plate. It shall be fixed on the processing stage. In order to achieve the above-mentioned second object, still another invention according to claim 4 and others is:
In a method of processing a thin film formed on a substrate by fixing a flexible substrate on a processing stage surface by vacuum suction from a plurality of suction holes formed by being dispersed in the processing stage, at least the processing stage. The surface layer is made of a heat resistant resin that does not absorb laser light. This heat resistant resin may be white or transparent.
【０００８】[0008]
【作用】貫通孔の明いた可とう性基板を加工ステージ上
に真空吸引で吸着する場合に、貫通孔が吸引孔と重なら
ないようにすれば、基板の貫通孔からの空気漏れがな
い。そのためには、基板の貫通孔を平行列状に明けられ
た吸引光の列間間隔の整数倍の間隔の平行列状に明けて
おけば、列方向を平行にし、１列の貫通孔が吸引孔の列
に重ならない位置に基板を停止させることにより、すべ
ての貫通孔と吸引孔が重なることがなく、位置決めが容
易である。第一の目的を達成する別の発明では、可とう
性基板を穴の明いていない透明可とう性板と支持ステー
ジの間にはさみ、基板の貫通孔を通じて吸引できる透明
板と共に真空吸引することにより基板の貫通孔からの空
気漏れがなく、レーザ加工は透明板を通して行うことが
できる。When a flexible substrate having a clear through hole is sucked onto the processing stage by vacuum suction, if the through hole does not overlap the suction hole, no air leaks from the through hole of the substrate. To this end, if the through holes of the substrate are opened in parallel rows with an interval that is an integer multiple of the inter-row spacing of the suction light that is opened in parallel rows, the row directions are made parallel and one row of through holes is sucked. By stopping the substrate at a position where it does not overlap the row of holes, all the through holes and the suction holes do not overlap and positioning is easy. In another invention for achieving the first object, a flexible substrate is sandwiched between a transparent flexible plate having no holes and a support stage, and vacuum suction is performed together with a transparent plate which can be sucked through a through hole of the substrate. There is no air leakage from the through holes of the substrate, and laser processing can be performed through the transparent plate.
【０００９】第二の目的を達成するためのさらに別の本
発明では、加工ステージの少なくとも表面層をレーザ光
を反射あるいは透過して吸収しない耐熱性樹脂により形
成することにより、レーザ光により加工ステージ表面が
損傷することがなく、表面の凹凸による基板の損傷が生
じない。In yet another aspect of the present invention for achieving the second object, at least the surface layer of the processing stage is formed of a heat-resistant resin that does not absorb the laser light by reflecting or transmitting the laser light. The surface is not damaged, and the substrate is not damaged due to the unevenness of the surface.
【００１０】[0010]
【実施例】以下、図を引用して本発明の実施例について
述べる。図２は、本発明の一実施例に用いるレーザ加工
装置を示し、この装置は、送り室１１、加工室１２、巻
き取り室１３よりなる。可とう性基板１は、送り室１１
のコア２１上から巻きほぐされ、アイドルロール２２よ
り方向を変え、矢印３１に示すように駆動ロール２３と
押さえロール２４の間を通して搬送することにより、巻
き取り室１３のコア２５に巻き取られる。加工室１２に
は、例えばＹＡＧレーザを用いるレーザ光源２と加工ス
テージ３が上下に対向している。レーザ光源２は、送り
ねじ４１の回転により矢印３２に示すように基板１の長
手方向に、また送りねじ４２の回転により基板１の幅方
向に送ることができる。加工ステージは、矢印３３に示
すように上下に移動できる。Embodiments of the present invention will be described below with reference to the drawings. FIG. 2 shows a laser processing apparatus used in an embodiment of the present invention, which comprises a feed chamber 11, a processing chamber 12, and a winding chamber 13. The flexible substrate 1 is placed in the feed chamber 11
The core 21 is unwound from the core 21, is changed in direction from the idle roll 22, and is conveyed between the drive roll 23 and the press roll 24 as shown by an arrow 31, and is wound around the core 25 of the winding chamber 13. In the processing chamber 12, a laser light source 2 using, for example, a YAG laser and a processing stage 3 are vertically opposed to each other. The laser light source 2 can be fed in the longitudinal direction of the substrate 1 as shown by an arrow 32 by the rotation of the feed screw 41 and in the width direction of the substrate 1 by the rotation of the feed screw 42. The processing stage can move up and down as indicated by arrow 33.
【００１１】図１ (ａ) は、加工ステージの下方から見
た可とう性基板１および加工ステージ３の透視平面図で
あり、同図 (ｂ) はそのＡ部拡大図である。可とう性基
板１は、耐熱性を有するポリイミドフィルムで厚さは５
０μｍであり、直列接続用孔５、集電用孔６が基板１の
長手方向に等間隔で明けられている。この基板１の上
に、図３に示すようにマスク成膜される銀電極膜、ａ−
Ｓｉ膜、透明電極の酸化インジウム膜よりなる薄膜太陽
電池が複数の領域１０に形成されており、この領域１０
が加工ステージの下方に位置するように基板１をステッ
プ搬送する。このために、可とう性基板１に明けられた
直列接続用孔５あるいは集電用孔６を光センサ７を用い
て検出し、薄膜太陽電池領域１０の位置決めをする。基
板１の領域１０が所定の位置で停止すると加工ステージ
３が図２に点線で示した位置から実線で示した位置に下
降し、基板１を押し下げる。加工ステージ３には縦横５
ｍｍ間隔で直径１ｍｍの吸引孔８が明けられており、真
空ポンプを用いて吸引することにより基板１を加工ステ
ージ３の上に吸着固定する。そして、レーザ光源２を移
動させてレーザ加工を行う。FIG. 1A is a perspective plan view of the flexible substrate 1 and the processing stage 3 as seen from below the processing stage, and FIG. 1B is an enlarged view of part A thereof. The flexible substrate 1 is a heat-resistant polyimide film with a thickness of 5
It is 0 μm, and holes 5 for series connection and holes 6 for current collection are opened at equal intervals in the longitudinal direction of the substrate 1. On this substrate 1, a silver electrode film mask-formed as shown in FIG.
A thin film solar cell including a Si film and an indium oxide film of a transparent electrode is formed in a plurality of regions 10.
The substrate 1 is step-transported so that is positioned below the processing stage. For this purpose, the thin film solar cell region 10 is positioned by detecting the series connection hole 5 or the current collection hole 6 formed in the flexible substrate 1 by using the optical sensor 7. When the region 10 of the substrate 1 stops at a predetermined position, the processing stage 3 descends from the position shown by the dotted line in FIG. 2 to the position shown by the solid line, and pushes down the substrate 1. Vertical and horizontal 5 on processing stage 3
Suction holes 8 having a diameter of 1 mm are formed at intervals of mm, and the substrate 1 is sucked and fixed onto the processing stage 3 by sucking with a vacuum pump. Then, the laser light source 2 is moved to perform laser processing.
【００１２】基板１に明けられた直列接続用孔５および
集電用孔６の基板長手方向の列の間隔は５ｍｍであり、
この列の一つが加工ステージ３の吸引孔８の列と重なら
ないように光センサ７を用いて基板の位置決めをすれ
ば、吸引孔８の列の間隔も５ｍｍであるため、吸引孔８
と直列接続用孔５および集電用孔６とは重ならない。従
って、真空ポンプによる吸引は、基板の穴が明いてない
部分に対して行われ、基板の穴５、６からの空気漏れが
ない。その結果、±0.１ｍｍ以内の平坦度で基板１を加
工ステージに吸着させることができた。The space between the series connection holes 5 and the current collecting holes 6 formed in the substrate 1 in the longitudinal direction of the substrate is 5 mm.
If the substrate is positioned by using the optical sensor 7 so that one of the rows does not overlap the row of the suction holes 8 of the processing stage 3, the row spacing of the suction holes 8 is 5 mm.
Does not overlap with the serial connection hole 5 and the current collection hole 6. Therefore, the suction by the vacuum pump is performed on the portion of the substrate where the holes are not open, and there is no air leakage from the holes 5 and 6 of the substrate. As a result, the substrate 1 could be adsorbed on the processing stage with a flatness within ± 0.1 mm.
【００１３】上記の実施例では直列接続用孔５および集
電用孔６の列の間隔を５ｍｍとしたが、５ｍｍの整数
倍、例えば１５ｍｍにしても吸引孔８と重なることはな
い。また、直列接続用孔５および集電用孔６を基板１の
幅方向に一線上にあるように明け、その各列の間隔を５
ｍｍあるいはその整数倍にすることによっても、列の位
置をずらすことにより穴の重なりを避けることができ
る。In the above embodiment, the distance between the rows of the series connection holes 5 and the current collection holes 6 is set to 5 mm, but even if it is an integral multiple of 5 mm, for example 15 mm, it does not overlap the suction holes 8. Also, the series connection hole 5 and the current collection hole 6 are opened so as to be aligned in the width direction of the substrate 1, and the interval between the rows is set to 5 mm.
Even if the distance is set to mm or an integral multiple thereof, overlapping of holes can be avoided by shifting the positions of the rows.
【００１４】図２に示すレーザ下降装置の加工ステージ
３には金属を用いないで、厚さ５ｍｍの白色の耐熱樹脂
テトラフルオロエチレン・パークルオロアルキルビニル
エーテル共重合体 (ＰＦＡ) により作製した。白色のＰ
ＦＡはレーザ光を反射するため、レーザ光による損傷が
なくなり、加工ステージ３表面の凹凸による基板の損傷
がなくなった。白色のＰＦＡでなく、透明のＰＦＡを用
いてもよく、その場合はレーザ光を吸収しないで透過す
るため損傷が生じない。また、加工ステージ表面層のみ
を１〜５ｍｍの厚さの耐熱樹脂で形成してもよい。No metal was used for the processing stage 3 of the laser lowering device shown in FIG. 2, and the processing stage 3 was made of a white heat-resistant resin tetrafluoroethylene / perfluoroalkylvinylether copolymer (PFA) having a thickness of 5 mm. White P
Since FA reflects the laser light, the damage due to the laser light is eliminated, and the damage to the substrate due to the irregularities on the surface of the processing stage 3 is eliminated. A transparent PFA may be used instead of the white PFA. In that case, the laser light is not absorbed but is transmitted, so that no damage occurs. Alternatively, only the surface layer of the processing stage may be formed of a heat resistant resin having a thickness of 1 to 5 mm.
【００１５】図４は、本発明の他の実施例に用いるレー
ザ加工装置であり、図２と共通の部分には同一の符号が
付されている。この装置では、基板１のステップ搬送に
連動して加工室内で透明フィルム９が送り出しロール２
６から巻き取りロール２７へステップ搬送される。この
場合の基板１には耐熱性を有するアラミドフィルムに予
め直列接続用孔、集電用孔を明けたものを用いた。透明
フィルム９には、レーザ光源２に用いられるＹＡＧレー
ザの波長５３７ｎｍの第二高調波の吸収率が低いテトラ
フルオロエチレン・ヘキサフルオロプロピレン共重合体
(ＦＥＰ) のフィルムを用いた。基板１上の薄膜太陽電
池領域が加工位置に到達すると、矢印３３方向で加工ス
テージ３が下降し、基板１に接触し、下に押し下げる。
そして、ロール２６、２７の間に平坦に張られている透
明フィルム９と接触する。こうして、透明フィルム９と
加工ステージ３の間に基板を挟み込み、加工ステージ３
に明けられた図１の吸引孔８から基板１を吸引する。こ
のとき、基板１に明いた直列接続用孔５および集電用孔
６は、透明フィルム９により塞がれているため、透明フ
ィルム９が吸引され、間にはさまれた基板を0.１ｍｍ以
内の平坦度で加工ステージ３に密着させることができ、
レーザ光源２から透明フィルム９を透過して基板１上の
薄膜に到達する。レーザ光により高精度のパターニング
ができる。この場合、基板１の密着のためには、基板１
の貫通孔５および６の全部あるいは一部を加工ステージ
３の吸引孔８に重なるようにすることが好ましい。透明
フィルム９には、弗化樹脂フィルムに限らず、加工に使
用されるレーザ光を８０〜９０％透過する材料であれ
ば、他のプラスチックフィルムも使用できる。FIG. 4 shows a laser processing apparatus used in another embodiment of the present invention, and the same parts as those in FIG. 2 are designated by the same reference numerals. In this apparatus, the transparent film 9 is sent out in the processing chamber in conjunction with the step transfer of the substrate 1
Step 6 is carried from 6 to the winding roll 27. In this case, the substrate 1 used was a heat-resistant aramid film in which holes for serial connection and holes for current collection were previously formed. The transparent film 9 has a tetrafluoroethylene / hexafluoropropylene copolymer having a low absorption rate of the second harmonic of the wavelength of 537 nm of the YAG laser used for the laser light source 2.
(FEP) film was used. When the thin-film solar cell region on the substrate 1 reaches the processing position, the processing stage 3 descends in the direction of arrow 33, contacts the substrate 1, and pushes it down.
Then, it comes into contact with the transparent film 9 stretched flat between the rolls 26 and 27. In this way, the substrate is sandwiched between the transparent film 9 and the processing stage 3, and the processing stage 3
The substrate 1 is sucked through the suction hole 8 shown in FIG. At this time, since the hole 5 for series connection and the hole 6 for current collection exposed on the substrate 1 are blocked by the transparent film 9, the transparent film 9 is sucked and the substrate sandwiched between the holes is 0.1 mm. Can be brought into close contact with the processing stage 3 with a flatness within
The laser light source 2 passes through the transparent film 9 and reaches a thin film on the substrate 1. Highly accurate patterning can be performed by laser light. In this case, in order to bring the substrate 1 into close contact, the substrate 1
It is preferable that all or a part of the through holes 5 and 6 of the above are overlapped with the suction holes 8 of the processing stage 3. The transparent film 9 is not limited to a fluororesin film, and other plastic films can be used as long as they are materials that transmit 80% to 90% of laser light used for processing.
【００１６】[0016]
【発明の効果】本発明によれば、可とう性基板に明けら
れた貫通孔を加工ステージに明けられた吸引孔に重ねな
いことにより、あるいは穴のない透明板で被って基板と
共に吸引することにより、基板の貫通孔からの空気漏れ
を防ぐことができる。これにより、レーザ加工の際に、
孔の明いた可とう性薄膜太陽電池基板などを±0.１ｍｍ
以内の平坦度で、固定することができた。この結果、加
工距離のずれ幅が大幅に縮小でき、加工幅のばらつきお
よび加工レーザ光線による基板へのダメージが改善され
た。According to the present invention, the through hole formed in the flexible substrate is not overlapped with the suction hole formed in the processing stage, or the transparent plate without a hole covers and sucks together with the substrate. Thereby, it is possible to prevent air leakage from the through hole of the substrate. As a result, during laser processing,
Flexible thin-film solar cell substrate with holes, ± 0.1 mm
With the flatness within the range, it could be fixed. As a result, the deviation of the processing distance can be greatly reduced, and the variation of the processing width and the damage to the substrate by the processing laser beam are improved.
【００１７】また、加工ステージ表面に、レーザ光を吸
収しない耐熱性樹脂を使用することにより、レーザ加工
時の加工ステージの損傷が無くなり、これに伴う基板の
損傷を低減することができた。Further, by using a heat-resistant resin that does not absorb laser light on the surface of the processing stage, damage to the processing stage during laser processing is eliminated, and damage to the substrate due to this can be reduced.
【図１】本発明の一実施例におけるレーザ加工時の加工
ステージ上の配置を示し、 (ａ) は透視平面図、 (ｂ)
は可とう性基板の部分拡大平面図1A and 1B show an arrangement on a processing stage during laser processing according to an embodiment of the present invention, FIG. 1A is a perspective plan view, and FIG.
Partially enlarged plan view of flexible substrate
【図２】本発明の実施例に用いるレーザ加工装置の断面
図FIG. 2 is a sectional view of a laser processing apparatus used in an embodiment of the present invention.
【図３】レーザ加工を行う可とう性基板の平面図FIG. 3 is a plan view of a flexible substrate for laser processing.
【図４】本発明の実施例に用いる他のレーザ加工装置の
断面図FIG. 4 is a sectional view of another laser processing apparatus used in the embodiment of the present invention.
１ 可とう性基板 ２ レーザ光源 ３ 加工ステージ ５ 直列接続用孔 ６ 集電用孔 ７ 光センサ ８ 吸引孔 ９ 透明フィルム １１ 送り室 １２ 加工室 １３ 巻き取り室 ２３ 駆動ロール DESCRIPTION OF SYMBOLS 1 Flexible substrate 2 Laser light source 3 Processing stage 5 Hole for series connection 6 Hole for current collection 7 Optical sensor 8 Suction hole 9 Transparent film 11 Feed chamber 12 Processing chamber 13 Winding chamber 23 Drive roll
Claims (6)
テージ表面上に加工ステージに分散して明けられた複数
の吸引孔からの真空吸引により固定して基板上に形成し
た薄膜をレーザ光によって加工する方法において、可と
う性基板の貫通孔が加工ステージの吸引孔に重ならない
位置に基板を停止して真空吸引することを特徴とするレ
ーザ加工方法。1. A thin film formed on a substrate by fixing a flexible substrate having a through hole formed thereon on a surface of the processing stage by vacuum suction from a plurality of suction holes formed by being dispersed on the processing stage. In the method of processing by light, a laser processing method is characterized in that the substrate is stopped at a position where the through hole of the flexible substrate does not overlap the suction hole of the processing stage and vacuum suction is performed.
をなして明けられ、基板の貫通孔が加工ステージの吸引
孔の列間隔の整数倍の間隔で平行な列をなして明けら
れ、基板を加工ステージ上に、双方の列方向が平行でか
つ列が重ならない位置に停止して真空吸引する請求項１
記載のレーザ加工方法。2. Suction holes are formed on the processing stage in parallel rows at equal intervals, and through holes in the substrate are formed in parallel rows at an integer multiple of the row intervals of the suction holes on the processing stage. The vacuum suction is performed by stopping the substrate on a processing stage at a position where the two columns are parallel to each other and the columns do not overlap each other.
The laser processing method described.
テージ表面上に加工ステージに分散して明けられた複数
の吸引孔からの真空吸引により固定して基板上に形成し
た薄膜をレーザ光によって加工する方法において、可と
う性基板をレーザ光に対して透明な可とう性板と加工ス
テージの間に挟着して真空吸引することにより基板を透
明板と共に加工ステージ上に固定することを特徴とする
レーザ加工方法。3. A thin film formed on a substrate by fixing a flexible substrate having a through hole formed on the surface of the processing stage by vacuum suction from a plurality of suction holes formed by being dispersed on the processing stage. In the method of processing by light, fixing the substrate together with the transparent plate on the processing stage by sandwiching the flexible substrate between the flexible plate transparent to the laser light and the processing stage and vacuum suction. A laser processing method characterized by the above.
ステージに分散して明けられた複数の吸引孔からの真空
吸引により固定して基板上に形成した薄膜をレーザ光に
より加工する方法において、加工ステージの少なくとも
表面層がレーザ光を吸収しない耐熱性樹脂よりなること
を特徴とするレーザ加工方法。4. A method for processing a thin film formed on a substrate by fixing a flexible substrate on the surface of the processing stage by vacuum suction from a plurality of suction holes formed by being dispersed in the processing stage by laser light. A laser processing method, wherein at least the surface layer of the processing stage is made of a heat resistant resin that does not absorb laser light.
ーザ加工方法。5. The laser processing method according to claim 4, wherein the heat resistant resin is white.
ーザ加工方法。6. The laser processing method according to claim 4, wherein the heat resistant resin is transparent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7114167A JP2815821B2 (en) | 1995-05-12 | 1995-05-12 | Laser processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7114167A JP2815821B2 (en) | 1995-05-12 | 1995-05-12 | Laser processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08309576A true JPH08309576A (en) | 1996-11-26 |
| JP2815821B2 JP2815821B2 (en) | 1998-10-27 |
Family
ID=14630857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7114167A Expired - Fee Related JP2815821B2 (en) | 1995-05-12 | 1995-05-12 | Laser processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2815821B2 (en) |
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| US5942137A (en) * | 1997-08-29 | 1999-08-24 | Scitex Corporation Ltd. | Method and apparatus for laser scribing grooves on hard crystals |
| JP2000164535A (en) * | 1998-11-24 | 2000-06-16 | Mitsubishi Electric Corp | Laser working device |
| JP2007027283A (en) * | 2005-07-13 | 2007-02-01 | Fuji Electric Holdings Co Ltd | Method and apparatus for manufacturing thin-film solar cell |
| KR100710830B1 (en) * | 2006-02-13 | 2007-04-23 | (주)인터플렉스 | Device for hole processing for copper clad laminates and method for hole processing using the same |
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| JP2009206235A (en) * | 2008-02-27 | 2009-09-10 | Fuji Electric Holdings Co Ltd | Method of manufacturing thin film solar battery |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5942137A (en) * | 1997-08-29 | 1999-08-24 | Scitex Corporation Ltd. | Method and apparatus for laser scribing grooves on hard crystals |
| JP2000164535A (en) * | 1998-11-24 | 2000-06-16 | Mitsubishi Electric Corp | Laser working device |
| JP2007027283A (en) * | 2005-07-13 | 2007-02-01 | Fuji Electric Holdings Co Ltd | Method and apparatus for manufacturing thin-film solar cell |
| KR100710830B1 (en) * | 2006-02-13 | 2007-04-23 | (주)인터플렉스 | Device for hole processing for copper clad laminates and method for hole processing using the same |
| JP2007224252A (en) * | 2006-02-27 | 2007-09-06 | Lintec Corp | Method for producing tacky adhesive sheet having through-hole, production apparatus and tool for supporting tacky adhesive sheet |
| JP2009206235A (en) * | 2008-02-27 | 2009-09-10 | Fuji Electric Holdings Co Ltd | Method of manufacturing thin film solar battery |
| JP2012000674A (en) * | 2010-06-14 | 2012-01-05 | Lg Chem Ltd | Apparatus for removing by-product of cutting in roll film cutting system |
| TWI413562B (en) * | 2010-06-14 | 2013-11-01 | Lg Chemical Ltd | Apparatus for removing by-product of film roll cutting system |
| KR101378619B1 (en) * | 2011-07-13 | 2014-03-28 | 춘-하오 리 | Laser processing machine |
| JP2013246885A (en) * | 2012-05-23 | 2013-12-09 | Shin Etsu Polymer Co Ltd | Device for manufacturing conductive pattern formation sheet and method for manufacturing conductive pattern formation sheet |
| JP2015018974A (en) * | 2013-07-11 | 2015-01-29 | 東京応化工業株式会社 | Support body separation unit |
| CN106132628A (en) * | 2014-04-01 | 2016-11-16 | 松下知识产权经营株式会社 | Laser machine and laser processing |
| CN107243699A (en) * | 2017-07-06 | 2017-10-13 | 深圳市海目星激光科技有限公司 | A kind of plane cutting mechanism |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2815821B2 (en) | 1998-10-27 |
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