JPH08307772A - Image sensor - Google Patents

Image sensor

Info

Publication number
JPH08307772A
JPH08307772A JP7109540A JP10954095A JPH08307772A JP H08307772 A JPH08307772 A JP H08307772A JP 7109540 A JP7109540 A JP 7109540A JP 10954095 A JP10954095 A JP 10954095A JP H08307772 A JPH08307772 A JP H08307772A
Authority
JP
Japan
Prior art keywords
photocharge
background
capacitance
light
incident
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7109540A
Other languages
Japanese (ja)
Other versions
JP3546525B2 (en
Inventor
Toronnamuchiyai Kuraison
トロンナムチャイ クライソン
Kazunori Noso
千典 農宗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP10954095A priority Critical patent/JP3546525B2/en
Priority to US08/547,230 priority patent/US5705807A/en
Publication of JPH08307772A publication Critical patent/JPH08307772A/en
Application granted granted Critical
Publication of JP3546525B2 publication Critical patent/JP3546525B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE: To improve sensitivity by providing a stored time changing means making the time for storing incident light electric charge in capacitance for storage and the time for detecting background light different on appearance. CONSTITUTION: At first, a light emitting part is turned off and only background light is received. Because background light current components are amplified to plural times by a current amplifier 1 at this time, the background light electric charge component of an opposite phase which is stored in capacitance CA for storage becomes plural times as much as the optical electric charge during this period. The magnification is defined as an A. Next, the light emitting part is turned on for the period 8, both of background light and signal light are received and the positive phase storage of the incident light electric charge corresponding to incident light including bald light and signal light is performed for the capacitance CA for storage. If the period 8 of this positive storage is made A times as much as the period 7 of the opposite phase storage, the background light electric charge components stored in the positive phase is cancelled by the background light electric charge component stored in the opposite phase. As a result, only the signal electric charge is stored in the capacitance CA for storage. In this case, a current amplifier 1 is used as a stored time changing means.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、信号の時間・空間微積
分を各画素でできるようにしたイメージセンサに関し、
特にその感度向上を図ったものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image sensor capable of performing time / space calculus of a signal at each pixel.
Especially, the sensitivity is improved.

【0002】[0002]

【従来の技術】従来のイメージセンサとしては、例え
ば、本件出願人が開示した図8に示すようなものがある
(特願平6−258287号)。その構成を説明する
と、各画素に、雑音に相当する背景光及び発光部(ライ
ト等)からの発光が物体で反射した信号光を含む入射光
を光電流に光電変換するための光電変換部としてPIN
フォトダイオードPDAが設けられ、その出力側がスイ
ッチSA1,SA3を介して電荷を一時的に蓄積するた
めの蓄積用静電容量CAの正電極と負電極にそれぞれ接
続されている。蓄積用静電容量CAの正電極はスイッチ
SA4を介して接地され、負電極はスイッチSA2を介
して接地されている。また蓄積用静電容量CAの正電極
はスイッチSA5を介して信号電荷成分を加算蓄積する
ための保持用静電容量CIの正電極に接続されている。
保持用静電容量CIの負電極は接地されている。TAは
出力部となるソースフォロワ型のMOSトランジスタで
あり、保持用静電容量CIの正電極が、そのゲートに接
続され、蓄積用静電容量CAの負電極がスイッチSA6
を介してそのソースに接続されている。MOSトランジ
スタTAの比較的大きなゲート容量を保持用静電容量C
Iとして用いることが可能である。Rは負荷抵抗、SR
は保持用静電容量CIのリセット用スイッチであり、M
OSトランジスタTAのゲート電圧を初期値Vbに設定
するために用いられている。Vdは電源である。MOS
トランジスタTAのソース電位(=出力電位)Vout
は、保持用静電容量CIの正電極での電位Vc−TAの
閾値電圧Vtと等しいために、MOSトランジスタTA
は、単位利得バッファとして動作する。
2. Description of the Related Art As a conventional image sensor, for example, there is one disclosed by the applicant of the present invention as shown in FIG. 8 (Japanese Patent Application No. 6-258287). Explaining the configuration, each pixel as a photoelectric conversion unit for photoelectrically converting incident light including background light corresponding to noise and signal light in which light emitted from a light emitting unit (light or the like) is reflected by an object to a photoelectric current. PIN
A photodiode PDA is provided, and its output side is connected to the positive electrode and the negative electrode of the storage capacitance CA for temporarily storing charges via the switches SA1 and SA3, respectively. The positive electrode of the storage capacitance CA is grounded via the switch SA4, and the negative electrode is grounded via the switch SA2. Further, the positive electrode of the storage capacitance CA is connected to the positive electrode of the storage capacitance CI for additionally storing the signal charge component via the switch SA5.
The negative electrode of the holding capacitance CI is grounded. Reference numeral TA denotes a source follower type MOS transistor serving as an output unit, a positive electrode of the holding capacitance CI is connected to its gate, and a negative electrode of the storage capacitance CA is a switch SA6.
Connected to its source via. The relatively large gate capacitance of the MOS transistor TA holds the holding capacitance C.
It can be used as I. R is load resistance, SR
Is a switch for resetting the holding capacitance CI, and M
It is used to set the gate voltage of the OS transistor TA to the initial value Vb. Vd is a power supply. MOS
Source potential (= output potential) Vout of the transistor TA
Is equal to the threshold voltage Vt of the potential Vc-TA at the positive electrode of the holding capacitance CI, the MOS transistor TA
Operates as a unity gain buffer.

【0003】上述のように構成された従来例の動作を図
9を用いて説明する。まず期間(1)の間は発光部を消
灯して背景光のみを受光する。このときスイッチSA
1,SA2をオフ、SA3,SA4をオンにして蓄積用
静電容量CAに背景光に対応した背景光電荷成分の逆相
蓄積を行なう。次に期間(2)の間に発光部を点灯し、
背景光と信号光の両方を受光する。このときスイッチS
A3,SA4をオフ、スイッチSA1,SA2をオン
し、蓄積用静電容量CAに背景光及び信号光を含む入射
光に対応した入射光電荷の正相蓄積を行なう。この結
果、1周期当たり蓄積用静電容量CAには、入射光電荷
から背景光電荷成分を減じた信号電荷成分のみが蓄積さ
れる。この正、逆相の蓄積を繰り返すことによって雑音
となる背景光電荷成分を除去しながら信号電荷成分のみ
を積分増幅することができ、大きな出力を得ることがで
きる。信号を読み出すには、一定の周期でスイッチSA
5,SA6をオンし、蓄積用静電容量CAから信号電荷
成分を保持用静電容量CIへ転送する。即ち、スイッチ
SA5,SA6は、蓄積用静電容量CAに蓄積された信
号電荷成分を保持用静電容量CIへ転送する転送手段を
構成している。またこの場合、短い周期で正・逆相の蓄
積をして背景光電荷成分を除去しているので背景光が正
・逆相蓄積の1周期分の間で変化することはない。即ち
正・逆相の蓄積周期が短いほど背景光の速い変化に強
い。但し遠方の撮影に対しては背景光が速く変化するこ
とはなく、周期をそれほど短くしなくてもよい。
The operation of the conventional example configured as described above will be described with reference to FIG. First, during the period (1), the light emitting unit is turned off and only the background light is received. At this time, switch SA
1 and SA2 are turned off and SA3 and SA4 are turned on to perform the reverse phase accumulation of the background photocharge component corresponding to the background light in the accumulation capacitance CA. Next, during the period (2), the light emitting section is turned on,
It receives both background light and signal light. At this time, switch S
A3 and SA4 are turned off and the switches SA1 and SA2 are turned on to perform positive-phase accumulation of incident photoelectric charges corresponding to incident light including background light and signal light in the storage capacitance CA. As a result, only the signal charge component obtained by subtracting the background photocharge component from the incident photocharge is stored in the storage capacitance CA per cycle. By repeating the accumulation of the positive and negative phases, it is possible to integrate and amplify only the signal charge component while removing the background photocharge component that becomes noise, and a large output can be obtained. To read out the signal, switch SA at regular intervals
5, SA6 is turned on, and the signal charge component is transferred from the storage capacitance CA to the holding capacitance CI. That is, the switches SA5 and SA6 form a transfer unit that transfers the signal charge component stored in the storage capacitance CA to the holding capacitance CI. Further, in this case, since the background photocharge components are removed by accumulating the positive and negative phases in a short cycle, the background light does not change during one cycle of the positive and negative phase accumulation. That is, the shorter the accumulation cycle of the positive / negative phases, the stronger the fast change of background light. However, the background light does not change rapidly for long-distance shooting, and the cycle need not be so short.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、このよ
うな従来のイメージセンサにあっては、フレーム周期の
半分を雑音となる背景光に対応した背景光電荷成分の逆
相蓄積に使うようになっていたため、信号電荷成分の蓄
積に使える時間は高々フレーム周期の半分であって、フ
レーム周期の全期間を信号電荷成分の蓄積に使えるよう
な場合よりも感度が低くなってしまう。また受光部のフ
ォトダイオードPDAには点線で示すような静電容量が
寄生しており、正・逆相を切替える際に蓄積用静電容量
CAに蓄積されている信号電荷の一部がこの寄生容量な
どへ流れて信号のロスが発生する。従来のイメージセン
サにあっては、正・逆相の切替えがひんぱんなためこの
信号電荷のロスが大きく、切替え回数が少ない場合に比
べて感度が低くなってしまう。このため従来のイメージ
センサは、これらの点ではなお改善を要していた。
However, in such a conventional image sensor, half of the frame period is used for the antiphase accumulation of the background photocharge component corresponding to the background light which becomes noise. Therefore, the time that can be used for accumulating the signal charge component is at most half of the frame period, and the sensitivity becomes lower than the case where the entire period of the frame period can be used for accumulating the signal charge component. In addition, the photodiode PDA of the light receiving portion has parasitic capacitance as shown by the dotted line, and a part of the signal charge accumulated in the storage capacitance CA when switching between positive and negative phases is parasitic. A signal loss occurs due to flow to the capacity. In the conventional image sensor, the switching between the positive and negative phases is frequent, so that the loss of the signal charge is large and the sensitivity becomes lower than that in the case where the number of switching is small. Therefore, the conventional image sensor still needs improvement in these points.

【0005】本発明は、上記に鑑みてなされたもので、
感度を向上させることのできるイメージセンサを提供す
ることを目的とする。
The present invention has been made in view of the above,
An object of the present invention is to provide an image sensor capable of improving sensitivity.

【0006】[0006]

【課題を解決するための手段】上記課題を解決するため
に、請求項1記載の発明は、各画素に、入射光を光電流
に光電変換する光電変換部と、信号光及び背景光を含む
入射光による前記光電流に対応した入射光電荷を一時的
に蓄積する蓄積用静電容量と、前記入射光電荷から前記
背景光に対応した背景光電荷成分を減じた信号電荷成分
を加算蓄積する保持用静電容量と、前記蓄積用静電容量
に蓄積された入射光電荷から前記背景光電荷成分を減算
して前記信号電荷成分を前記保持用静電容量に転送する
転送手段とを設けてなるイメージセンサにおいて、前記
入射光電荷を前記蓄積用静電容量に蓄積する時間と前記
背景光を検出する時間とをみかけ上異ならせる蓄積時間
変更手段を設けてなることを要旨とする。
In order to solve the above-mentioned problems, the invention according to claim 1 includes, in each pixel, a photoelectric conversion portion for photoelectrically converting incident light into photocurrent, and signal light and background light. An accumulating capacitance for temporarily accumulating the incident photocharge corresponding to the photocurrent due to the incident light and a signal charge component obtained by subtracting the background photocharge component corresponding to the background light from the incident photocharge are accumulated and accumulated. A holding capacitance and a transfer unit that subtracts the background photocharge component from the incident photocharge stored in the storage capacitance and transfers the signal charge component to the holding capacitance are provided. In this image sensor, it is a gist to provide a storage time changing unit that apparently makes the time for storing the incident photocharges in the storage capacitance different from the time for detecting the background light.

【0007】請求項2記載の発明は、上記請求項1記載
のイメージセンサにおいて、前記蓄積時間変更手段は、
前記背景光を所定時間検出することにより得た背景光電
荷成分を前記所定時間の複数倍の時間だけ保持させる手
段からなり、前記入射光電荷は前記所定時間毎に複数回
前記蓄積用静電容量に蓄積するとともに当該所定時間の
経過毎に前記入射光電荷から前記保持された背景光電荷
成分を減算して前記保持用静電容量に転送するように構
成してなることを要旨とする。
According to a second aspect of the present invention, in the image sensor according to the first aspect, the storage time changing means is
The background photocharge component obtained by detecting the background light for a predetermined time is held for a plurality of times of the predetermined time, and the incident photocharge is stored in the storage capacitance a plurality of times at the predetermined time. The background photocharge component held is subtracted from the incident photocharge and transferred to the holding capacitance every time the predetermined time elapses.

【0008】請求項3記載の発明は、上記請求項1記載
のイメージセンサにおいて、前記蓄積時間変更手段は、
前記背景光を所定時間検出して得た背景光電荷成分を当
該背景光電荷成分に対応した電圧の複数倍の電圧にして
充電保持する手段又は前記背景光を所定時間検出して得
た背景光電荷成分を複数倍に増幅する手段の何れかから
なり、前記入射光電荷は前記所定時間の複数倍の時間だ
け前記蓄積用静電容量に蓄積するとともに該蓄積用静電
容量に蓄積した入射光電荷から前記充電保持した複数倍
の電圧に対応した背景光電荷成分又は前記複数倍に増幅
した前記背景光電荷成分の何れかを減算して前記保持用
静電容量に転送するように構成してなることを要旨とす
る。
According to a third aspect of the present invention, in the image sensor according to the first aspect, the storage time changing means is
Means for charging and holding the background light charge component obtained by detecting the background light for a predetermined time to a voltage multiple times the voltage corresponding to the background light charge component, or background light obtained by detecting the background light for a predetermined time The incident light charge is stored in the storage capacitance for a time period multiple of the predetermined time, and the incident light stored in the storage capacitance is formed by any one of means for amplifying a charge component by a plurality of times. It is configured to subtract either the background photocharge component corresponding to the multiple times voltage charged and held from the electric charge or the background photocharge component amplified to the multiple times and transferred to the holding capacitance. The point is to become.

【0009】請求項4記載の発明は、上記請求項1記載
のイメージセンサにおいて、前記蓄積時間変更手段は、
前記背景光を所定時間の複数倍の時間だけ検出して得た
背景光電荷成分を前記所定時間だけ蓄積する手段又は前
記背景光を所定時間の複数倍の時間だけ検出して得た背
景光電荷成分を複数分の1に除算する手段の何れかから
なり、前記入射光電荷は前記所定時間だけ前記蓄積用静
電容量に蓄積するとともに該蓄積用静電容量に蓄積され
た入射光電荷から前記所定時間だけ蓄積したか又は前記
複数分の1に除算した前記背景光成分を減算して前記保
持用静電容量に転送するように構成してなることを要旨
とする。
According to a fourth aspect of the invention, in the image sensor according to the first aspect, the accumulation time changing means is
Means for accumulating the background light charge component obtained by detecting the background light for a plurality of times of the predetermined time or the background light charge obtained by detecting the background light for a plurality of times of the predetermined time The incident photocharge is stored in the storage capacitance for the predetermined time, and the incident photocharge is stored in the storage capacitance. The gist is that the background light component accumulated for a predetermined time or divided into a plurality of times is subtracted and transferred to the holding capacitance.

【0010】[0010]

【作用】請求項1記載の発明において、蓄積時間変更手
段により、例えば背景光に対応して逆相蓄積される背景
光電荷成分を複数倍に増幅すれば、入射光電荷を蓄積用
静電容量に正相蓄積する時間を複数倍に長くすることで
正相中に蓄積される背景光電荷成分が丁度逆相中に蓄積
される背景光電荷成分と相殺されて信号電荷成分のみが
保持用静電容量に加算蓄積される。したがって入射光電
荷を蓄積用静電容量に蓄積する時間を背景光を検出する
時間よりも長くすることができて感度を向上させること
が可能となる。また正・逆相を切替える回数が減って切
替えの際の信号電荷のロスが少なくなって感度をさらに
向上させることが可能となる。また例えば信号光の強度
が十分に強く短い正相蓄積時間で大きな出力が得られる
場合、上記と逆に背景光電荷成分の方を長い時間蓄積す
れば背景光のノイズの影響が減少して精度のよい画像信
号の検出が可能となる。
According to the present invention, if the background photocharge component, which is accumulated in the opposite phase corresponding to the background light, is amplified by the accumulating time changing means by a plurality of times, the incident photocharge is accumulated in the storage capacitance. By increasing the positive phase accumulation time to multiple times, the background photocharge component accumulated during the positive phase is canceled out by the background photocharge component accumulated during the opposite phase, and only the signal charge component is retained. It is added and stored in the capacitance. Therefore, the time for accumulating the incident photocharges in the accumulating capacitance can be made longer than the time for detecting the background light, and the sensitivity can be improved. Further, the number of times of switching between the positive and negative phases is reduced, the loss of the signal charge at the time of switching is reduced, and the sensitivity can be further improved. Also, for example, when the signal light intensity is sufficiently strong and a large output can be obtained in a short positive-phase accumulation time, conversely, if the background photocharge component is accumulated for a longer time, the influence of background light noise is reduced and the accuracy is improved. It is possible to detect a good image signal.

【0011】請求項2記載の発明において、所定時間の
逆相蓄積により得た背景光電荷成分をその所定時間の複
数倍の時間だけ保持させ、入射光電荷は所定時間毎に複
数回蓄積用静電容量に蓄積するとともにその所定時間の
経過毎に入射光電荷から上記の保持された背景光電荷成
分を減算して保持用静電容量に転送することにより、入
射光電荷を正相蓄積する時間を背景光検出時間の複数倍
にすることができて感度を向上させることが可能とな
る。
In the second aspect of the present invention, the background photocharge component obtained by the antiphase accumulation for a predetermined time is held for a plurality of times of the predetermined time, and the incident photocharge is stored for a plurality of times at a predetermined time. The time to accumulate the incident photocharge in the positive phase by accumulating in the capacitance and subtracting the above-mentioned held background photocharge component from the incident photocharge at every elapse of the predetermined time and transferring to the holding capacitance. Can be made multiple times the background light detection time, and the sensitivity can be improved.

【0012】請求項3記載の発明において、逆相蓄積に
より得た背景光電荷成分をその背景光電荷成分に対応し
た電圧の複数倍の電圧にして充電保持するか又はその背
景光電荷成分を複数倍に増幅し、入射光電荷は上記複数
倍の時間だけ蓄積用静電容量に正相蓄積するとともにそ
の入射光電荷から上記の充電保持した電圧に相当する背
景光電荷成分又は上記の複数倍に増幅した背景光電荷成
分を減算して保持用静電容量に転送することにより、入
射光電荷を正相蓄積する時間を背景光検出時間の複数倍
に長くすることができ、また正・逆相の切替え回数を減
らすことができて感度を向上させることができる。
In the invention according to claim 3, the background photocharge component obtained by the reverse phase accumulation is charged and held at a voltage which is a multiple of the voltage corresponding to the background photocharge component, or a plurality of background photocharge components are held. Amplify the incident photocharges in the positive phase in the storage capacitance for the above multiple times and multiply the background photocharge components corresponding to the voltage held by the incident photocharges or the above multiple times. By subtracting the amplified background photocharge component and transferring it to the holding capacitance, the time to accumulate the incident photocharge in the positive phase can be extended to multiple times the background light detection time. It is possible to reduce the number of switching times and improve the sensitivity.

【0013】請求項4記載の発明においては、例えば、
信号光の強度が十分に強く短い正相蓄積時間で十分大き
な出力が得られる場合、上記とは逆に、背景光電荷成分
を逆相蓄積する時間の方を長くすることで背景光のノイ
ズの影響が減少して精度のよい画像信号の検出が可能と
なる。
In the invention of claim 4, for example,
If the intensity of the signal light is sufficiently strong and a sufficiently large output can be obtained with a short positive-phase accumulation time, conversely to the above, by increasing the time for accumulating the background photocharge components in the opposite phase, the background light noise The influence is reduced and the image signal can be detected with high accuracy.

【0014】[0014]

【実施例】以下、本発明の実施例を図面に基づいて説明
する。図1ないし図3は本発明の第1実施例を示す図で
ある。なお、図1及び後述の第2実施例以下の各実施例
を示す図において前記図8における素子等と同一ないし
均等のものは、前記と同一符号を以って示し、重複した
説明を省略する。
Embodiments of the present invention will be described below with reference to the drawings. 1 to 3 are views showing a first embodiment of the present invention. It should be noted that in FIG. 1 and the drawings showing the second and subsequent embodiments, the same or equivalent elements as those in FIG. 8 are denoted by the same reference numerals as those described above, and the duplicated description will be omitted. .

【0015】まずイメージセンサの構成を説明すると、
本実施例では、スイッチSA3と蓄積用静電容量CAの
負電極との間に蓄積時間変更手段として、背景光に対応
した背景光電流成分を所定の複数倍に増幅する電流増幅
器1が接続されている。図2は、電流増幅器1の具体的
な構成例を示しており、例えばMOSトランジスタ1a
で(A−1)個のMOSトランジスタ1b〜1nを駆動
することにより電流Iを所定の複数倍AIに増幅するカ
レントミラー回路が用いられる。
First, the structure of the image sensor will be described.
In this embodiment, the current amplifier 1 for amplifying the background photocurrent component corresponding to the background light by a predetermined multiple is connected as a storage time changing means between the switch SA3 and the negative electrode of the storage capacitance CA. ing. FIG. 2 shows a specific configuration example of the current amplifier 1, for example, a MOS transistor 1a.
Then, a current mirror circuit is used which amplifies the current I to a predetermined multiple times AI by driving the (A-1) MOS transistors 1b to 1n.

【0016】次に上述のように構成されたイメージセン
サの動作を図3を用いて説明する。まず期間(1)の間
に発光部を消灯して背景光のみを受光する。このとき背
景光電流成分が電流増幅器1によって複数倍に増幅され
ているので蓄積用静電容量CAに蓄積される逆相の背景
光電荷成分はこの期間中の光電荷の複数倍になる。その
倍率をAとする。次いで期間(8)の間に発光部を点灯
し、背景光と信号光の両方を受光して蓄積用静電容量C
Aに背景光及び信号光を含む入射光に対応した入射光電
荷の正相蓄積を行なう。この正相蓄積の期間(8)を逆
相蓄積の期間(7)のA倍にすれば正相中に蓄積される
背景光電荷成分が丁度逆相中に蓄積される背景光電荷成
分と相殺される。その結果信号電荷成分のみが蓄積用静
電容量CAに蓄積される。このように正・逆相の蓄積を
繰り返すことによって背景光電荷成分を除去し、信号電
荷成分のみを蓄積用静電容量CAに蓄積するという点で
は本実施例は従来例と同等な動作をする。そしてこのよ
うな信号電荷成分の蓄積動作において、本実施例は従来
例よりも信号光を長時間蓄積できる。したがって感度が
向上する。また正・逆相を切替える回数が減るので切替
えの際の信号電荷のロスが少なくなり感度がさらに向上
する。
Next, the operation of the image sensor configured as described above will be described with reference to FIG. First, during the period (1), the light emitting unit is turned off to receive only the background light. At this time, since the background photocurrent component has been amplified by the current amplifier 1 multiple times, the background photocharge component of the opposite phase accumulated in the storage capacitance CA is multiple times the photocharge during this period. The magnification is A. Next, during the period (8), the light emitting portion is turned on to receive both the background light and the signal light and store the storage capacitance C.
Positive-phase accumulation of incident photocharges corresponding to incident light including background light and signal light is performed on A. If the positive-phase accumulation period (8) is multiplied by A times the negative-phase accumulation period (7), the background photocharge components accumulated in the positive phase are offset by the background photocharge components accumulated in the reverse phase. To be done. As a result, only the signal charge component is stored in the storage capacitance CA. In this way, this embodiment operates in the same manner as the conventional example in that the background photocharge component is removed by repeating the accumulation of the positive and negative phases and only the signal charge component is accumulated in the accumulation capacitance CA. . Further, in such an operation of accumulating the signal charge component, the present embodiment can accumulate the signal light for a longer time than the conventional example. Therefore, the sensitivity is improved. Further, since the number of times of switching between the positive and negative phases is reduced, the loss of the signal charge at the time of switching is reduced and the sensitivity is further improved.

【0017】図4には、本発明の第2実施例を示す。ま
ず構成を説明する。本実施例では、フォトダイオードP
DAの出力側がスイッチSB1,SB2を介して正相蓄
積用静電容量CB1と逆相蓄積用静電容量CB2の各正
電極にそれぞれ接続されている。両蓄積用静電容量CB
1,CB2の負電極は接地されている。正相蓄積用静電
容量CB1の正電極はスイッチSB3を介してオペアン
プ2の反転入力端子(−)に接続され、逆相蓄積用静電
容量CB2の正電極はスイッチSB4を介してオペアン
プ2の非反転入力端子(+)に接続されている。オペア
ンプ2の出力端子は、保持用静電容量CB3の負電極に
接続され、この接続点がそのまま出力端子OUTとな
る。保持用静電容量CB3の正電極はオペアンプ2の反
転入力端子(−)に接続されている。スイッチSB5,
SB6,SB7はそれぞれ静電容量CB1,CB2,C
B3のリセット用スイッチである。そしてさらに逆相蓄
積用静電容量CB2の正電極とスイッチSB4の間に、
蓄積時間変更手段としてその逆相蓄積用静電容量CB2
に蓄積された背景光電荷成分を所定の複数倍Aに増幅す
るための電圧増幅器3が接続されている。
FIG. 4 shows a second embodiment of the present invention. First, the configuration will be described. In this embodiment, the photodiode P
The output side of DA is connected to the respective positive electrodes of the positive-phase storage capacitance CB1 and the negative-phase storage capacitance CB2 via switches SB1 and SB2. Both storage capacitance CB
The negative electrodes of 1 and CB2 are grounded. The positive electrode of the positive phase storage capacitance CB1 is connected to the inverting input terminal (−) of the operational amplifier 2 via the switch SB3, and the positive electrode of the negative phase storage capacitance CB2 is connected to the operational amplifier 2 via the switch SB4. It is connected to the non-inverting input terminal (+). The output terminal of the operational amplifier 2 is connected to the negative electrode of the holding electrostatic capacitance CB3, and this connection point becomes the output terminal OUT as it is. The positive electrode of the holding capacitance CB3 is connected to the inverting input terminal (−) of the operational amplifier 2. Switch SB5
SB6 and SB7 are capacitances CB1, CB2 and C, respectively.
It is a reset switch for B3. Further, between the positive electrode of the capacitance CB2 for storing negative phase and the switch SB4,
As the storage time changing means, the reverse phase storage capacitance CB2
A voltage amplifier 3 for amplifying the background photoelectric charge component accumulated in the above is multiplied by a predetermined multiple A is connected.

【0018】次に動作を説明する。まず発光部を消灯し
て背景光のみを受光する。このときスイッチSB1をオ
フ、スイッチSB2をオンにして逆相蓄積用静電容量C
B2に背景光に対応した背景光電荷成分の逆相蓄積を行
なう。次いで発光部を点灯し、背景光と信号光の両方を
受光する。このときスイッチSB2をオフ、スイッチS
B1をオンにして正相蓄積用静電容量CB1に背景光及
び信号光を含む入射光に対応した入射光電荷の正相蓄積
を行なう。その後スイッチSB3,SB4をオンにする
とオペアンプの作用により入射光電荷から背景光電荷成
分を減じた信号電荷成分が保持用静電容量CB3に転送
される。即ちこの構成のイメージセンサでは、スイッチ
SB3,SB4及びオペアンプ2により正相蓄積用静電
容量CB1に蓄積された入射光電荷から背景光電荷成分
を減算して信号電荷成分を保持用静電容量CB3に転送
する転送手段が構成されている。そしてこのような入射
光電荷から背景光電荷成分の減算作用において、本実施
例では逆相蓄積用静電容量CB2に蓄積された背景光電
荷成分が電圧増幅器3でA倍に増幅されるため、入射光
電荷を正相蓄積用静電容量CB1に正相蓄積する時間を
逆相蓄積時間の複数倍Aにすることにより、正相中に蓄
積された背景光電荷成分が丁度逆相中に蓄積された背景
光電荷成分と相殺される。その結果信号電荷成分のみが
保持用静電容量CB3に加算蓄積される。したがって本
実施例も前記図4に示したのと同様の動作、即ち信号電
荷蓄積時間を長くし、正・逆相の切替え回数を減らすこ
とができて感度を向上させることができる。
Next, the operation will be described. First, the light emitting unit is turned off to receive only the background light. At this time, the switch SB1 is turned off and the switch SB2 is turned on so that the reverse phase accumulation capacitance C
In B2, the background light charge component corresponding to the background light is stored in the reverse phase. Then, the light emitting unit is turned on to receive both the background light and the signal light. At this time, the switch SB2 is turned off and the switch S
B1 is turned on to perform positive-phase accumulation of incident photoelectric charges corresponding to incident light including background light and signal light in the positive-phase accumulation capacitance CB1. After that, when the switches SB3 and SB4 are turned on, the signal charge component obtained by subtracting the background photocharge component from the incident photocharge is transferred to the holding capacitance CB3 by the action of the operational amplifier. That is, in the image sensor having this configuration, the background photocharge component is subtracted from the incident photocharge accumulated in the positive phase accumulation capacitance CB1 by the switches SB3, SB4 and the operational amplifier 2 to hold the signal charge component in the capacitance CB3. The transfer means for transferring to is configured. In the subtraction of the background photocharge component from the incident photocharge, the background photocharge component stored in the anti-phase storage capacitance CB2 is amplified A times by the voltage amplifier 3 in the present embodiment. By setting the time for accumulating the incident photocharges in the positive-phase accumulation capacitance CB1 in the positive phase to be a multiple of the antiphase accumulation time A, the background photocharge components accumulated in the positive phase are accumulated in the opposite phase. Cancels out the background photocharged components. As a result, only the signal charge component is added and accumulated in the holding capacitance CB3. Therefore, also in this embodiment, the same operation as that shown in FIG. 4, that is, the signal charge accumulation time can be lengthened, the number of times of switching between positive and negative phases can be reduced, and the sensitivity can be improved.

【0019】図5には、本発明の第3実施例を示す。本
実施例では、上記第2実施例のイメージセンサとほぼ同
様の構成のイメージセンサにおいて、逆相蓄積用静電容
量CB4の静電容量値が正相蓄積用静電容量CB1の静
電容量値の1/A倍に小さく設定されている。この静電
容量値が小さく設定された逆相蓄積用静電容量CB4に
より蓄積時間変更手段が構成されている。このような構
成のため同じ蓄積時間では逆相蓄積用静電容量CB4に
は正相蓄積用静電容量CB1のA倍の電圧が充電され
る。したがって本実施例においても上記第2実施例と同
様に、入射光電荷を正相蓄積用静電容量CB1に正相蓄
積する時間を逆相蓄積時間の複数倍Aに長くし、また正
・逆相の切替え回数を減らすことができて感度を向上さ
せることができる。
FIG. 5 shows a third embodiment of the present invention. In the present embodiment, in the image sensor having substantially the same configuration as the image sensor of the second embodiment, the capacitance value of the reverse phase storage capacitance CB4 is the capacitance value of the positive phase storage capacitance CB1. It is set to be 1 / A times smaller than. The storage time changing means is composed of the reverse-phase storage capacitance CB4 whose capacitance value is set small. Due to such a configuration, in the same storage time, the negative phase storage capacitance CB4 is charged with a voltage A times as high as the positive phase storage capacitance CB1. Therefore, also in this embodiment, as in the case of the second embodiment, the time for accumulating the incident photocharges in the positive-phase accumulation capacitance CB1 in the positive phase is lengthened to a multiple A of the reverse-phase accumulation time, and the The number of phase switching can be reduced and the sensitivity can be improved.

【0020】図6には、本発明の第4実施例を示す。本
実施例は、前記第2実施例のイメージセンサと同じ構成
のイメージセンサにおいて、蓄積時間変更手段として逆
相蓄積用静電容量CB2のリセット用スイッチSB6を
制御するリセット制御回路4が設けられている。このリ
セット制御回路4により背景光を所定時間検出すること
により得た背景光電荷成分をその所定時間の複数倍の時
間だけ逆相蓄積用静電容量CB2に保持させることがで
きるようになっている。図7にその動作タイミングチャ
ートを示す。期間(9)の間発光部を消灯して背景光の
みを受光し、背景光電荷成分を逆相蓄積用静電容量CB
2に逆相蓄積する。次に期間(10)の間発光部を点灯
して背景光と信号光の両方を受光し、背景光及び信号光
を含む入射光に対応した入射光電荷を正相蓄積用静電容
量CB1に正相蓄積する。逆相蓄積時の背景光電荷成分
と同じだけ正相蓄積分の背景光電荷成分が蓄積したらス
イッチSB3,SB4をオンにして信号電荷成分のみを
保持用静電容量CB3に転送する。引き続き期間(1
1)で発光部をそのまま点灯しておき、再び入射光電荷
を正相蓄積用静電容量CB1に正相蓄積する。このとき
従来と違ってリセット用スイッチSB6を遮断状態のま
まに保ち逆相蓄積用静電容量CB2に蓄積されている背
景光電荷成分をリセットしない。期間(11)の終わり
に再びスイッチSB3,SB4をオンにし、逆相静電容
量CB2に蓄積されている背景光電荷成分を使って減算
を行ない、信号電荷成分のみを保持用静電容量CB3に
転送蓄積する。これをA回繰り返す。このような動作に
より、信号電荷成分を含む入射光電荷を正相蓄積用静電
容量CB1に正相蓄積する時間を背景光検出時間の複数
倍にすることができて感度を向上させることができる。
FIG. 6 shows a fourth embodiment of the present invention. In the present embodiment, an image sensor having the same configuration as the image sensor of the second embodiment is provided with a reset control circuit 4 for controlling a reset switch SB6 of the anti-phase storage capacitance CB2 as storage time changing means. There is. The background charge component obtained by detecting the background light for a predetermined time by the reset control circuit 4 can be held in the anti-phase storage capacitance CB2 for a plurality of times of the predetermined time. . FIG. 7 shows the operation timing chart. During the period (9), the light emitting unit is turned off to receive only the background light, and the background light charge component is stored in the reverse phase storage capacitance CB.
2 accumulates in reverse phase. Next, during the period (10), the light emitting unit is turned on to receive both the background light and the signal light, and the incident photocharges corresponding to the incident light including the background light and the signal light are stored in the positive-phase storage capacitance CB1. Accumulate in normal phase. When the background photocharge component for the positive phase accumulation is accumulated by the same amount as the background photocharge component during the reverse phase accumulation, the switches SB3 and SB4 are turned on to transfer only the signal charge component to the holding capacitance CB3. Continued period (1
In 1), the light emitting unit is left lit as it is, and the incident photocharge is stored in the positive phase storage capacitance CB1 in the positive phase again. At this time, unlike the prior art, the reset switch SB6 is kept in the cutoff state and the background photoelectric charge component stored in the anti-phase storage capacitance CB2 is not reset. At the end of the period (11), the switches SB3 and SB4 are turned on again, subtraction is performed using the background photocharge component accumulated in the antiphase capacitance CB2, and only the signal charge component is stored in the holding capacitance CB3. Transfer accumulation. Repeat this A times. With such an operation, the time for accumulating the incident photocharges including the signal charge component in the positive-phase accumulating capacitance CB1 in the positive phase can be made multiple times the background light detection time, and the sensitivity can be improved. .

【0021】この他に前記した特願平6−258287
号に開示した全実施例に対して本発明を適用することが
できる。
In addition to this, the above-mentioned Japanese Patent Application No. 6-258287.
The present invention can be applied to all the embodiments disclosed in the publication.

【0022】また、ここまで述べてきたのと逆に背景光
電荷成分の逆相蓄積時間を信号電荷成分の正相蓄積時間
より長くすることも考えられる。例えば信号光の強度が
十分に強く短い正相蓄積時間で十分大きな出力が得られ
る場合、背景光電荷成分を長い時間蓄積すれば背景光の
ノイズの影響が減少して精度のよい画像信号を得ること
が可能となる。この場合には、例えば図1、図4、図5
に示す増幅率Aないしは倍率Aを1より小さくするか又
は図1、図4、図5、図6に示す場合と反対に正相蓄積
側に増幅器又はタイミング制御回路を設ければよい。
Contrary to what has been described above, it is also conceivable to make the reverse phase accumulation time of the background photocharge component longer than the positive phase accumulation time of the signal charge component. For example, when the intensity of the signal light is sufficiently strong and a sufficiently large output can be obtained in a short positive phase accumulation time, if the background photocharge component is accumulated for a long time, the influence of the noise of the background light is reduced and an accurate image signal is obtained. It becomes possible. In this case, for example, FIGS.
The amplification factor A or the multiplication factor A shown in (1) may be set to be smaller than 1, or an amplifier or a timing control circuit may be provided on the positive phase accumulation side contrary to the cases shown in FIGS. 1, 4, 5, and 6.

【0023】[0023]

【発明の効果】以上説明したように、請求項1記載の発
明によれば、例えば入射光電荷を蓄積用静電容量に蓄積
する時間を背景光を検出する時間よりも長くしたとき
は、感度を向上させることができる。また正・逆相を切
替える回数が減って切替えの際の信号電荷のロスが少な
くなって感度をさらに向上させることができる。一方、
例えば信号光の強度が十分に強く短い正相蓄積時間で大
きな出力が得られる場合、上記と逆に背景光を検出する
時間の方を長くしたときは、背景光のノイズの影響が減
少して精度のよい画像信号を得ることができる。
As described above, according to the first aspect of the invention, for example, when the time for accumulating the incident photocharge in the accumulating capacitance is set longer than the time for detecting the background light, the sensitivity is increased. Can be improved. Further, the number of times of switching between the positive and negative phases is reduced, the loss of the signal charge at the time of switching is reduced, and the sensitivity can be further improved. on the other hand,
For example, if the signal light intensity is sufficiently strong and a large output is obtained in a short positive-phase accumulation time, and if the time for detecting the background light is set longer than the above, the effect of the background light noise decreases. An accurate image signal can be obtained.

【0024】請求項2記載の発明によれば、入射光電荷
を蓄積用静電容量に正相蓄積する時間を背景光検出時間
の複数倍にすることができて感度を向上させることがで
きる。
According to the second aspect of the present invention, it is possible to increase the time for accumulating the incident photocharges in the storage capacitance in the positive phase to be a multiple of the background light detection time and improve the sensitivity.

【0025】請求項3記載の発明によれば、入射光電荷
を蓄積用静電容量に正相蓄積する時間を背景光検出時間
の複数倍に長くすることができ、また正・逆相の切替え
回数を減らすことができて感度を向上させることができ
る。
According to the third aspect of the present invention, it is possible to lengthen the time for accumulating the incident photocharges in the accumulating capacitance in the positive phase to be a plurality of times longer than the background light detection time, and switching between the positive and negative phases. The number of times can be reduced and the sensitivity can be improved.

【0026】請求項4記載の発明によれば、例えば信号
光の強度が十分に強く短い正相蓄積時間で十分大きな出
力が得られる場合は、背景光のノイズの影響が減少して
精度のよい画像信号を得ることができる。
According to the fourth aspect of the invention, for example, when the intensity of the signal light is sufficiently strong and a sufficiently large output can be obtained in a short positive phase accumulation time, the influence of the noise of the background light is reduced and the accuracy is high. An image signal can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係るイメージセンサの第1実施例を示
す回路図である。
FIG. 1 is a circuit diagram showing a first embodiment of an image sensor according to the present invention.

【図2】上記図1における電流増幅器の内部構成を示す
回路図である。
FIG. 2 is a circuit diagram showing an internal configuration of the current amplifier shown in FIG.

【図3】上記第1実施例の動作を説明するための図であ
る。
FIG. 3 is a diagram for explaining the operation of the first embodiment.

【図4】本発明の第2実施例を示す回路図である。FIG. 4 is a circuit diagram showing a second embodiment of the present invention.

【図5】本発明の第3実施例を示す回路図である。FIG. 5 is a circuit diagram showing a third embodiment of the present invention.

【図6】本発明の第4実施例を示す回路図である。FIG. 6 is a circuit diagram showing a fourth embodiment of the present invention.

【図7】上記第4実施例の動作を説明するための図であ
る。
FIG. 7 is a diagram for explaining the operation of the fourth embodiment.

【図8】従来のイメージセンサを示す回路図である。FIG. 8 is a circuit diagram showing a conventional image sensor.

【図9】上記従来例の動作を説明するための図である。FIG. 9 is a diagram for explaining the operation of the conventional example.

【符号の説明】[Explanation of symbols]

1 電流増幅器(蓄積時間変更手段) 2 オペアンプ 3 電圧増幅器(蓄積時間変更手段) 4 リセット制御回路(蓄積手段変更手段) CA 蓄積用静電容量 CB1 正相蓄積用静電容量 CB2 逆相蓄積用静電容量 CB3,CI 保持用静電容量 CB4 静電容量値の小さい逆相蓄積用静電容量(蓄積
時間変更手段) PDA フォトダイオード(光電変換部) SA5,SA6 転送手段となるスイッチ SB3,SB4 オペアンプとともに転送手段となるス
イッチ
1 current amplifier (accumulation time changing means) 2 operational amplifier 3 voltage amplifier (accumulation time changing means) 4 reset control circuit (accumulation means changing means) CA storage capacitance CB1 positive phase storage capacitance CB2 reverse phase storage static Capacitance CB3, CI Holding capacitance CB4 Capacitance for reverse phase accumulation with small capacitance value (accumulation time changing means) PDA Photodiode (photoelectric conversion section) SA5, SA6 Switch serving as switch SB3, SB4 Operational amplifier A switch that acts as a transfer means with

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 各画素に、入射光を光電流に光電変換す
る光電変換部と、信号光及び背景光を含む入射光による
前記光電流に対応した入射光電荷を一時的に蓄積する蓄
積用静電容量と、前記入射光電荷から前記背景光に対応
した背景光電荷成分を減じた信号電荷成分を加算蓄積す
る保持用静電容量と、前記蓄積用静電容量に蓄積された
入射光電荷から前記背景光電荷成分を減算して前記信号
電荷成分を前記保持用静電容量に転送する転送手段とを
設けてなるイメージセンサにおいて、前記入射光電荷を
前記蓄積用静電容量に蓄積する時間と前記背景光を検出
する時間とをみかけ上異ならせる蓄積時間変更手段を設
けてなることを特徴とするイメージセンサ。
1. A photoelectric conversion unit for photoelectrically converting incident light into a photocurrent in each pixel, and a storage unit for temporarily accumulating an incident photocharge corresponding to the photocurrent by the incident light including signal light and background light. A capacitance, a holding capacitance for additionally storing a signal charge component obtained by subtracting a background photocharge component corresponding to the background light from the incident photocharge, and an incident photocharge stored in the storage capacitance. And a transfer means for transferring the signal charge component to the holding capacitance by subtracting the background photocharge component from the image sensor, and a time for storing the incident photocharge in the storage capacitance. And an accumulation time changing means for apparently differentiating the time for detecting the background light and the time for detecting the background light.
【請求項2】 前記蓄積時間変更手段は、前記背景光を
所定時間検出することにより得た背景光電荷成分を前記
所定時間の複数倍の時間だけ保持させる手段からなり、
前記入射光電荷は前記所定時間毎に複数回前記蓄積用静
電容量に蓄積するとともに当該所定時間の経過毎に前記
入射光電荷から前記保持された背景光電荷成分を減算し
て前記保持用静電容量に転送するように構成してなるこ
とを特徴とする請求項1記載のイメージセンサ。
2. The accumulation time changing means comprises means for holding a background photoelectric charge component obtained by detecting the background light for a predetermined time, for a time that is a multiple of the predetermined time,
The incident photocharge is accumulated in the storage capacitance a plurality of times at the predetermined time, and the held background photocharge component is subtracted from the incident photocharge at the elapse of the predetermined time to hold the holding static charge. The image sensor according to claim 1, wherein the image sensor is configured to transfer to an electric capacity.
【請求項3】 前記蓄積時間変更手段は、前記背景光を
所定時間検出して得た背景光電荷成分を当該背景光電荷
成分に対応した電圧の複数倍の電圧にして充電保持する
手段又は前記背景光を所定時間検出して得た背景光電荷
成分を複数倍に増幅する手段の何れかからなり、前記入
射光電荷は前記所定時間の複数倍の時間だけ前記蓄積用
静電容量に蓄積するとともに該蓄積用静電容量に蓄積し
た入射光電荷から前記充電保持した複数倍の電圧に対応
した背景光電荷成分又は前記複数倍に増幅した前記背景
光電荷成分の何れかを減算して前記保持用静電容量に転
送するように構成してなることを特徴とする請求項1記
載のイメージセンサ。
3. The means for changing the accumulation time, wherein the background light charge component obtained by detecting the background light for a predetermined time is set to a voltage that is a multiple of the voltage corresponding to the background light charge component, and held. The background photocharge component obtained by detecting the background light for a predetermined time is amplified by a plurality of times, and the incident photocharge is stored in the storage capacitance for a plurality of times of the predetermined time. Along with the subtraction of either the background photocharge component corresponding to the multiple voltage that has been charged and held or the background photocharge component that has been amplified multiple times from the incident photocharge stored in the storage capacitance The image sensor according to claim 1, wherein the image sensor is configured to be transferred to a use capacitance.
【請求項4】 前記蓄積時間変更手段は、前記背景光を
所定時間の複数倍の時間だけ検出して得た背景光電荷成
分を前記所定時間だけ蓄積する手段又は前記背景光を所
定時間の複数倍の時間だけ検出して得た背景光電荷成分
を複数分の1に除算する手段の何れかからなり、前記入
射光電荷は前記所定時間だけ前記蓄積用静電容量に蓄積
するとともに該蓄積用静電容量に蓄積された入射光電荷
から前記所定時間だけ蓄積したか又は前記複数分の1に
除算した前記背景光成分を減算して前記保持用静電容量
に転送するように構成してなることを特徴とする請求項
1記載のイメージセンサ。
4. The storage time changing means stores the background light charge component obtained by detecting the background light for a plurality of times of a predetermined time or a plurality of the background light for a predetermined time. The input photocharge is stored in the storage capacitance for the predetermined time and stored in the storage capacitance for a predetermined time. It is configured to subtract the background light component accumulated for the predetermined time or divided by a plurality of times from the incident photocharge accumulated in the capacitance and transfer it to the holding capacitance. The image sensor according to claim 1, wherein:
JP10954095A 1994-10-24 1995-05-08 Image sensor Expired - Fee Related JP3546525B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10954095A JP3546525B2 (en) 1995-05-08 1995-05-08 Image sensor
US08/547,230 US5705807A (en) 1994-10-24 1995-10-24 Photo detecting apparatus for detecting reflected light from an object and excluding an external light componet from the reflected light

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10954095A JP3546525B2 (en) 1995-05-08 1995-05-08 Image sensor

Publications (2)

Publication Number Publication Date
JPH08307772A true JPH08307772A (en) 1996-11-22
JP3546525B2 JP3546525B2 (en) 2004-07-28

Family

ID=14512846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10954095A Expired - Fee Related JP3546525B2 (en) 1994-10-24 1995-05-08 Image sensor

Country Status (1)

Country Link
JP (1) JP3546525B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001108521A (en) * 1999-10-07 2001-04-20 Hamamatsu Photonics Kk Photodetector
JP2003057113A (en) * 2001-08-13 2003-02-26 Canon Inc Photoelectric transducer, photometry sensor and imaging device
JP2006197383A (en) * 2005-01-14 2006-07-27 Canon Inc Solid-state imaging device, control method thereof, and camera
US8350912B2 (en) 2006-08-04 2013-01-08 Ssd Company Limited Image sensor and image sensor system
CN107481763A (en) * 2017-08-11 2017-12-15 北京芯思锐科技有限责任公司 A kind of memory and its detection method and chip

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001108521A (en) * 1999-10-07 2001-04-20 Hamamatsu Photonics Kk Photodetector
JP2003057113A (en) * 2001-08-13 2003-02-26 Canon Inc Photoelectric transducer, photometry sensor and imaging device
JP2006197383A (en) * 2005-01-14 2006-07-27 Canon Inc Solid-state imaging device, control method thereof, and camera
US8350912B2 (en) 2006-08-04 2013-01-08 Ssd Company Limited Image sensor and image sensor system
CN107481763A (en) * 2017-08-11 2017-12-15 北京芯思锐科技有限责任公司 A kind of memory and its detection method and chip

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