JPH08306692A - Al group alloy metal wiring thin film, its manufacture and manufacturing device - Google Patents

Abstract

PURPOSE: To decrease the energy of irradiation ions, to attain an ion irradiation in a high current density and to prevent the deterioration in the film quality of an Al group alloy metal wiring thin film, which is caused by ion impact, by specifying the wining thin film in the orientation of the crystal face, which is parallel to the surface of the wiring thin film, in the content of crystal grains in the wiring thin film, in the surface roughness degree of the wiring thin film and in the mean grain diameter of the crystal grains. CONSTITUTION: An Al group alloy metal wiring thin film contains 99% or higher of crystal grains in the orientation of the crystal face (111), which is parallel to the surface of the wiring thin film, and moreover, the wiring thin film has the flatness of a surface roughness of 30nm or lower and the crystal grains have a grain diameter of 0.3μm or shorter on the average. Owing to this, an Al alloy is used as the material for a target 11, the air in the interior of a device is exhausted, Ar gas is introduced in the device, microwaves are introduced in an ECR ion source and while the energy of ions and an ionic current are measured by an ion measuring device, the energy of ions and the ionic current are applied to a group 16 of energy-of-ion control electrodes of the ion source. The energy of ions to come flying on a film-forming substrate or the energy of ions in plasma is set in 5 to 300eV and an ionic current density is set in 1 to 10mA/cm<2> .

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a more reliable Al.
The present invention relates to a base alloy metal wiring thin film, a manufacturing method thereof, and a manufacturing apparatus thereof.

[0002]

2. Description of the Related Art Conventionally, magnetron sputtering has been used in the production of Al-based alloy metal wiring thin films for semiconductor wiring. The wiring film produced by such a method has a crystal grain size of 500 nm or more, and disconnection occurs at the crystal grain boundary due to a high current density.

Further, since the grain boundary is not flat, a stress is generated between the grain boundary and the upper insulating film, which easily causes a disconnection due to the stress, resulting in a decrease in reliability. Furthermore, it is difficult to manufacture stably because granular irregularities are generated due to the influence of a slight amount of impurities in the film forming atmosphere or the crystallinity is lowered. In order to obtain high reliability, a wiring thin film having high crystallinity and a flat surface is required. Furthermore, a method and apparatus for stably producing such a wiring film is required.

In order to form such a wiring film, the surface diffusion of Al atoms on the film surface at the time of film formation is sufficiently promoted, and the impurity nuclei generated by trapping a trace amount of impurities in the atmosphere are generated. It needs to be suppressed. In order to obtain such an effect, there is a method of irradiating the film surface with ions during film formation, promoting surface diffusion of Al atoms, and removing impurity nuclei from the film. However, at this time, if ions with high energy of 300 eV or higher are irradiated, the film quality is deteriorated due to irradiation damage, and the crystallinity and flatness are rather deteriorated.

Further, even if the energy of the ions to be irradiated is reduced, if sufficient ion current density cannot be obtained, surface diffusion and removal of impurity nuclei cannot be effectively performed, and the crystal orientation and flatness are deteriorated. It becomes insufficient, and a metal wiring film excellent in stress migration resistance and electromigration resistance cannot be obtained. Furthermore, a normal ion source such as a Kauffman type ion source used for such a purpose cannot supply ions of high current density with low energy.

[0006]

As described above, according to the conventional technique, an Al-based alloy metal wiring thin film having excellent crystal orientation, surface smoothness, electromigration resistance and stress migration resistance is formed. Is difficult, and in the method of promoting the diffusion of atoms by ion irradiation to enhance crystallinity and surface smoothness, the energy of irradiated ions is high and deterioration due to ion bombardment is inevitable.

Therefore, in the present invention, the energy of the ions to be irradiated is lowered and the ions are irradiated at a high current density to suppress the deterioration of the film quality due to the ion bombardment,
It is an object of the present invention to provide a highly reliable Al-based alloy metal wiring thin film excellent in crystal orientation and surface smoothness, excellent in electromigration resistance and stress migration resistance, and a manufacturing method and manufacturing apparatus thereof.

[0008]

The present invention has the following structure to solve the above problems.

The present invention according to claim 1 is an Al-based alloy metal wiring thin film, in which 99% or more of the crystal grains have (111) crystal planes parallel to the film plane, and the surface roughness is 30n.
It is characterized by having flatness of m or less and having crystallinity of an average grain size of 0.3 μm or less.

A method of manufacturing an Al-based alloy metal wiring thin film according to claim 2 is a method of forming an Al-based alloy metal wiring thin film on a film-forming substrate by using ions or plasma. The ion energy of incoming ions or plasma is 5 eV to 300 eV, and the ion current density is 1 mA / cm ² to 10 mA / cm ² .

According to a third aspect of the present invention, there is provided a method of manufacturing an Al-based alloy metal wiring thin film, wherein the ECR sputtering method is used in the method of forming the Al-based alloy metal wiring thin film, and the energy of ions flying on the film formation substrate is 5 eV to 300 eV. And the ion density is 1 mA / cm ² to 10 mA / cm
It is characterized in that the energy and density of the ions are controlled by an electric field or a magnetic field so that the condition of the range of ² is satisfied.

The method for producing an Al-based alloy metal wiring thin film according to claim 4 is the method for producing an Al-based alloy metal wiring thin film, wherein a sputtering method using a flat plate target is used,
Simultaneously with the film formation, the film surface on the film formation substrate is irradiated with an ion stream supplied from an ECR ion source, the energy of ions flying on the film formation substrate is changed from 5 eV to 300 eV, and the ion current density is 1 mA / cm ² To 10 mA / cm ² for irradiation.

According to a fifth aspect of the present invention, there is provided an apparatus for producing an Al-based alloy metal wiring thin film, comprising: a target for parallel plate type disk magnetron sputtering; an ECR ion source for irradiating a film-forming substrate with an ion stream; and an ECR ion source. The electrode group for adjusting the energy and the current density of the provided ions, the electrode group and the current sensor for measuring the energy and the current density of the ions provided immediately below the film formation substrate, and the film formation substrate are moved. It has a substrate support mechanism and a shutter between the target and the film formation substrate.

[0014]

According to the first aspect of the present invention, both the electromigration resistance and the stress migration resistance of the Al-based alloy metal wiring thin film can be improved.

According to the second aspect of the present invention, it is possible to obtain an Al-based alloy metal wiring thin film having good crystallinity, crystal orientation, flatness, small crystal grains, and excellent stress migration resistance and electromigration resistance. it can.

According to the present invention of claim 3, when the film is formed by the ECR sputtering method, the crystallinity, the crystal orientation and the flatness are excellent and the stress migration resistance and the electromigration resistance with the small crystal grains are small. An Al-based alloy metal wiring thin film having excellent properties can be obtained.

According to the present invention of claim 4, when sputtering is performed using a flat plate target, the crystallinity,
It is possible to obtain an Al-based alloy metal wiring thin film having excellent crystal orientation, flatness, small crystal grains, and excellent stress migration resistance and electromigration resistance.

According to the fifth aspect of the present invention, when sputtering is performed using a flat plate target, the crystallinity, crystal orientation, and flatness are good, and the stress migration resistance and electromigration resistance with small crystal grains are excellent. Further, the Al-based alloy metal wiring thin film can be obtained easily and efficiently.

The Al-based alloy metal wiring thin film having high crystallinity and having the (111) crystal plane oriented parallel to the film surface is excellent in electromigration resistance. 99% or more of the aluminum-based metal wiring film (11
1) Crystal orientation is desirable. If it is less than this, defects are accumulated at the crystal grain boundaries of crystal grains having different crystal orientations due to the current flowing through the wiring film, leading to disconnection. That is, the electromigration resistance is poor.

The crystal orientation can be measured by X-ray diffraction. That is, it is confirmed that the diffraction line intensity from the (111) crystal plane is 100 times or more than the sum of the diffraction line intensities from other crystal planes. Further, when the degree of integration of the device is increased and the width of the wiring is 1 μm or less, one or two crystal grains are arranged in the width direction of the wiring, and the wiring has a single crystal grain in the width direction. The structure is such that the boundaries are crossed, but disconnection occurs when defects are accumulated at this transverse grain boundary. Therefore, such difficulty could be avoided by reducing the particle size.

When the particle size is smaller, disconnection due to stress acting between the passivation film formed on the wiring film is less likely to occur. That is, the stress migration resistance is excellent. At this time, it is preferable that the crystal grain size is small, but it is preferably 0.3 μm or less. Further, the unevenness of the wiring film surface is also important.

In a commonly used Al-based alloy metal wiring thin film, wedge-shaped grain boundaries with depressed crystal grain boundaries are frequently formed. Further, a dented defect also occurs on the crystal surface. Such unevenness reduces electromigration resistance and stress migration resistance. Such irregularities are preferably small, and the average amplitude of the irregularities is preferably 30 nm or less.

With the unevenness of 30 nm or more, disconnection is likely to occur due to electromigration and stress migration. Usually, when the crystal grains are small as described above, the crystallinity is often lowered even if they are crystallographically oriented. However, according to the manufacturing method of the present invention, a crystal grain is small in the high crystallinity and a flat wiring film It is possible to make.

Further, according to the manufacturing method of the present invention, an Al-based alloy metal wiring thin film satisfying the above conditions can be manufactured regardless of the composition. Pure Al, Al-Cu, Al-Si, or Al-Si- Cu or the like is preferable. In the case of Al-Cu and Al-Si, the composition ratio is
It is preferable that Cu and Si are each 3 wt% or less. In the case of Al-Si-Cu, Al is preferably 97 wt% or more, and Si and Cu are each 3 wt% or less.

According to the present invention, 1 mA / cm ^{2 is applied} during film formation.
Current density of 10 mA / cm ² and 5 eV to 30
By forming the film while irradiating relatively low-energy ions of 0 eV, surface diffusion of film atoms is promoted, impurity nuclei are removed, and the crystallinity, crystal orientation, and flatness are good, and the crystal grain size is large. It is also possible to obtain an Al-based alloy metal wiring thin film which is small and has excellent stress migration resistance and electromigration resistance.

The current density of the irradiated ions is 1 mA /
If it is smaller than cm ² , the number of ions is small and the effect is not remarkable. Further, if it is higher than 10 mA / cm ^2, the reaction frequency between film atoms and impurities becomes high, the surface temperature rises too much, and large surface irregularities are formed due to growth of defects and impurity nuclei.

The energy of the irradiated ions is
If it is less than 5 eV, surface diffusion of atoms and removal of impurity nuclei are not effectively performed, and if it is more than 300 eV, defects occur due to impact of ions on the film, and both crystallinity and crystal orientation are deteriorated.

According to the ECR sputtering method using ECR discharge, some of the ions of the ECR plasma are drawn into the target and used to sputter the target, while the others flow toward the surface of the substrate to form a film. The surface is irradiated with an ion stream. At this time, the energy of the ion particles for irradiating the film surface is usually several tens of eV, and has an ion current density of 1 mA / cm ² to 10 mA / cm ² .

The energy and the current density of the ion irradiation on the film surface can be changed by applying an electric field or a magnetic field. Therefore, according to the ECR sputtering method, it is not necessary to prepare an ion source for ion irradiation, and it is possible to simultaneously perform both sputtering and ion irradiation with one ion source.

However, when a film is uniformly formed on a large-area substrate having a diameter of 10 inches or more, the film may be formed by a normal sputtering method using a flat plate target. In such a case, if an ECR ion source as an ion source for ion irradiation is attached, it is possible to uniformly form a film on a large area.

[0031]

EXAMPLES Next, examples conducted according to the present invention will be described.

FIG. 1 shows the ECR used in Examples 1 to 6.
It is a figure which shows the sputtering apparatus 20. Below,
The configuration of the ECR sputtering apparatus 20 using the above and the procedure for forming a film using the ECR sputtering apparatus 20 will be described.

The ECR device 20 is shown in FIG.
Plasma generating coil 1, target 2, shutter 3,
It is composed of a blocking electrode 4, a current sensor 5, an ion current density control coil 6, a substrate holder 7, an ion energy control electrode group 8, and a microwave introduction vacuum waveguide 9.

6 inside the vacuum chamber for generating plasma
Exhaust up to × 10 ^-8 Torr and Ar gas at 4 × 10 ^-4 T
orr, introduced microwave from the vacuum waveguide 9 for microwave introduction, and performed ECR discharge.
Sputtering was performed by applying a voltage of −50 V to a target 2 made of an Al—Si—Cu alloy of 11 wt% and Si 0.5 wt%.

Before the substrate on which the film is to be formed is conveyed to a predetermined position, the shutter 3 is opened, and the energy and current density of the ions flying to the position of the substrate are determined by the blocking electrode 4 and the current sensor arranged immediately below the substrate position. The ion energy control electrode group 8 and the ion current density control coil 6 set the ion energy and the current density to predetermined values, respectively, while measuring by the ion analysis system composed of 5. After that, the shutter 3 was closed, the substrate was conveyed to a predetermined position, and film formation was started.

Next, the film forming conditions of the Al-based alloy metal wiring thin film formed by using the above ECR sputtering device 20 and the evaluation thereof will be described.

In the present embodiment, an Si (100) substrate having a 600 nm silicon oxide film attached thereto was used as a film formation substrate, and a film having a thickness of 800 nm was formed at a film growth rate of 3 nm per second without heating the substrate. Filmed The energy of the ions irradiated to the substrate position and the ion current density were changed under these film forming conditions, and the relationship between the ion energy and the ion current density and the film quality of the film formed was investigated.

The film quality was evaluated at 400 ° C. for 2 days after the completion of film formation.
After annealing for a period of time, observation was performed with an X-ray and a scanning secondary electron microscope (SEM) or a transmission electron microscope (TEM). Further, the surface irregularities were observed using an atomic force microscope (AFM).

For the evaluation of electromigration, patterning was performed after film formation, and a current density of 1 × 10 ⁶ mA / cm ² was applied under an environment of 200 ° C. in the atmosphere, and 500 was applied.
The disconnection rate after the passage of time was measured. Moreover, it was confirmed that the composition of the film coincided with the composition of the target 2.

The above results are summarized in Table 1.

In Table 1, Ei represents the ion energy of irradiation, and Ji represents the irradiation ion current density. In addition, (1
11) The orientation is the X-ray diffraction intensity of the (111) crystal plane,
It is the ratio to the sum of the diffraction intensities by other crystal planes. If this amount exceeds 100, 99% or more (11
1) It can be considered that the crystals are oriented.

[0042]

[Table 1] As shown in Examples 1 to 6 in Table 1, the film formed according to this example has a high disconnection rate of 4% or less after 500 hours, indicating high reliability. Further, according to SEM observation and AFM observation, a very flat film was obtained in each of the examples. It is difficult to confirm the crystal grain boundaries even by SEM observation at a magnification of 100,000 times, and the grain size is TEM.
Determined by observation.

In the case of the wiring thin film formed by the usual magnetron sputtering method, there are crystal grains of 500 nm to several microns, and the crystal grain boundaries as described above have irregularities, and the flatness is lost. Such large crystal grains are not observed in each example. Furthermore, looking at the intensity of the X-ray diffraction line in each example, the (111) diffraction intensity is 100 times or more the (100) diffraction intensity, which means that most of the crystal grains constituting the film have (111) crystal planes. It shows that the film has a crystal orientation parallel to the film surface. It was also found that the intensity of the diffracted ray was strong and the crystallinity was high.

In Comparative Example 1, the crystal orientation is (11
1) Although oriented, its X-ray peak intensity is weak,
The crystallinity is lowered and the crystal grain size is not so different as compared with each example, but the surface is rough and the flatness is lost. This is because the ion energy becomes high and the radiation damage accompanied therewith.

Since Comparative Example 2 irradiates with energy higher than that of Comparative Example 1, the influence is remarkable,
The crystal orientation is also lost. This result shows that the Al-Cu alloy film (Cu: 2 wt%) and the Al-Si alloy film (Si:
Similar results were obtained with other Al-based alloy thin films such as 0.5 wt%).

In the micrograph of FIG. 3, S of the thin film of Example 2 is
An EM photograph is shown. Further, for comparison, an SEM photograph of a usual Al-based alloy thin film prepared by a usual magnetron sputtering method without performing ion irradiation is shown in a micrograph of FIG.

In FIG. 3 showing the thin film of Example 2, no surface irregularities due to the grain boundaries and defects shown in FIG. 4 are seen, and the crystal grains are too small to be judged from the figure. . Further, in the case of the structure shown in FIG. 3, the crystal grains may be very large, but as described above, it has been confirmed by TEM, AFM, etc. that the crystal grains are fine.

Next, another embodiment to which the present invention is applied will be described.

FIG. 2 is a view showing a sputtering apparatus 30 using the flat plate target used in Examples 7 to 12. The sputtering device 30 is a device for forming a film by a magnetron sputtering method using a normal disk target 11, and an ECR ion source (not shown) for irradiating ions is installed beside the target 11. There is.

Immediately below the substrate is an ion measuring device including a blocking electrode 13 and a current sensor 14 for analyzing ion energy and ion current, as in the case of the device shown in FIG.

The ECR ion source includes an ECR plasma generation coil 10, a microwave guide tube vacuum waveguide 17, and a cavity connected to the vacuum waveguide for supplying microwaves, and further ion energy and current. The ion energy control electrode group 16 for adjusting A microwave generator and a vacuum waveguide for supplying microwaves are omitted in the figure.

The thin film manufacturing apparatus of the present invention is such an EC
R ion source and flat plate target 11, shutter 12,
The substrate holder 15 and the ion monitor are provided. The ion monitor includes a blocking electrode 13 and a current sensor 14, and is arranged immediately below the substrate position. Before film formation, the substrate holder 15 is moved, and the sputtering and ion irradiation are performed with the shutter 12 opened to measure ion energy and current density with an ion monitor so that the measured values become desired values. The ion energy controlling electrode group 16
The voltage to be applied to and the applied microwave voltage are adjusted.

Thereafter, the shutter 12 is closed and the substrate holder 1
5 is returned to a predetermined position, and then the shutter 12 is opened to start film formation. Here, the blocking electrode 13 of the ion monitor is preferably composed of three or more electrodes in order to improve accuracy. Further, the current sensor 14 may be a plate or cup having a simple structure made of metal, or may be made of a metallic material having a secondary electron multiplying effect.

The substrate holder 15 preferably has a built-in heater for heating the substrate. Further, due to restrictions such as set pressure and power source used, the ion current control electrode 16
If the ion energy and the current density cannot be set to desired values only by adjusting the voltage to be applied to and the input microwave power, a direct current or high frequency voltage is further applied to the substrate holder 15 to change the voltage or voltage amplitude. By adjusting, it becomes possible to set to a desired value. Therefore, it is desirable that such a voltage can be applied to the substrate holder 15.

Further, it is desirable that the target 11 is directly above the substrate in terms of the uniformity of the film on the substrate. Therefore, the ECR ion source for ion irradiation must be arranged at a position where ions are obliquely irradiated to the substrate. If the deviation of the ion incident direction from the substrate normal direction is large, the irradiation ion current density is lowered.
Therefore, it is desirable that the ECR ion source is arranged so that the ions are incident on the substrate from a direction close to its normal direction. Further, in FIG. 2, various power sources,
The drive system and signal output system are omitted.

The film forming rate is not particularly limited, but if the film forming rate is too low, the effect of removing the nuclei due to the inclusion of impurities decreases, and the productivity also decreases. Further, if the film formation rate is too high, the structural relaxation during the film formation becomes difficult to occur, and the crystallization decreases. Furthermore, the temperature rise due to the heat released when condensing from the gas phase to the solid phase cannot be ignored, and the crystallization also decreases.

Therefore, the film forming rate is 0.1 nm / sec.
Hereafter, 20 nm / sec or more is preferable. Moreover, although the substrate temperature has an effect of promoting surface diffusion of atoms by setting it to an appropriate temperature, there is a temperature rise due to the ion irradiation effect, so that heating is not particularly required. However, if the temperature is higher than 300 ° C., the impurity generation frequency becomes high and the crystallization may decrease, so it is preferable to heat at a temperature of 300 ° C. or lower.

It is also preferable to further increase the crystallinity by annealing at 300 ° C. or higher and 450 ° C. or lower after the film formation.

Next, the conditions of film formation performed by the above apparatus 30 will be described.

As the target 11, an Al alloy containing 2 wt% of Cu was used. 6 × 10 ^-8 Tor inside the device
After evacuating to r, 2 × 10 ⁻³ Torr of Ar was introduced into the apparatus, and microwave was introduced into the ECR ion source from the microwave introduction vacuum waveguide 17 to cause ECR discharge and generate an ion current. It was After that, when the substrate holder 15 is away from the predetermined position, the shutter 12 is opened, the ion energy and the ion current are measured by the ion measuring device, and when applied to the ion energy control electrode group 16 of the ion source, the voltage and the ion source are introduced into the ion source. The condition of the ion flow was set by controlling the power of the microwave.

Thereafter, the shutter 12 is closed and the substrate holder 1
5 is placed in a predetermined position, and RF is applied to the target 11.
Power was turned on to cause sputtering discharge. After that, the shutter 12 was opened again to start film formation. The film forming rate was 15 nm per second. The substrate temperature was 300 ° C.
When the film thickness reached 800 nm, the shutter 12 was closed and the film formation was completed.

The Al-based alloy thin film formed in Example 2 was also evaluated in the same manner as in the evaluation methods described in Examples 1 to 6. The results are summarized in Table 2.

[0063]

[Table 2] Also in the seventh to twelfth embodiments, the first to sixth embodiments described above are used.
It is shown that, as in the case (1), it has a good crystal grain size, crystal orientation, and surface irregularities. In addition, the disconnection rate, which is closely related to the reliability of the metal wiring film, is 4% or less, which shows that it has good characteristics.

Further, in Comparative Examples 3 and 4 in which the film formation was carried out without irradiating the ions from the ECR ion source, the orientation was deteriorated due to irradiation damage by high-energy ions, as in Comparative Examples 1 and 2. Loss, deterioration of crystallinity, and surface roughness were observed.

[0065]

According to the present invention, a highly reliable Al-based alloy metal wiring thin film having both high electromigration resistance and stress migration resistance can be obtained. As a result, a high density fine wiring pattern of a semiconductor device can be obtained. It can be applied and the reliability of the device can be improved.

According to the second aspect of the present invention, it is possible to manufacture a highly reliable Al-based alloy metal wiring thin film having both high electromigration resistance and stress migration resistance, and as a result, high density fine wiring of a semiconductor device. It can be applied to a pattern and the reliability of the device can be improved.

According to the present invention as set forth in claim 3, a highly reliable Al-based alloy metal wiring thin film having both high electromigration resistance and stress migration resistance is obtained by using the ECR sputtering method. It can be applied to a high-density fine wiring pattern, and the reliability of the device can be improved.

According to the present invention as set forth in claim 4, by using a flat plate target, both electromigration resistance and stress migration resistance are high and high reliability A is obtained.
An l-base alloy metal wiring thin film is obtained, and as a result, it can be applied to a high-density fine wiring pattern of a semiconductor device, and the reliability of the device can be improved.

According to the present invention of claim 5, a flat plate target is used, and both electromigration resistance and stress migration resistance are high, and high reliability A is obtained.
The l-base alloy metal wiring thin film can be manufactured easily and efficiently, and as a result, it can be applied to a high-density fine wiring pattern of a semiconductor device, and the reliability of the device can be improved.

[Brief description of drawings]

FIG. 1 is a configuration diagram of a sputtering apparatus used in an example of the present invention.

FIG. 2 is a configuration diagram of an apparatus used in another embodiment of the present invention.

FIG. 3 is an electron micrograph of a metal film formed in an example of the present invention.

FIG. 4 is an electron micrograph of a conventional metal film.

[Explanation of symbols]

 1 ... ECR plasma generation coil, 2, 11 ... Target, 3, 12 ... Shutter, 4, 13 ... Blocking electrode, 5, 14 ... Current sensor, 6 ... Ion current density control coil, 7, 15 ... Substrate holder, 8, 16 ... Ion energy control electrode, 9, 17 ... Microwave introduction vacuum waveguide, 10 ... ECR plasma generation coil, 20, 30 ... Device.

Claims (5)

[Claims] 1. An Al-based alloy metal wiring thin film comprising:
11) There are 99% or more of crystal grains whose crystal planes are parallel to the film surface, and surface irregularities have a flatness of 30 nm or less,
And an Al-based alloy metal wiring thin film having crystallinity with an average grain size of 0.3 μm or less. 2. A method of forming an Al-based alloy metal wiring thin film on a film-forming substrate using ions or plasma, wherein the ion energy of the ions or plasma flying on the film-forming substrate is 5 eV or less. 300 eV,
Ion current density is 1 mA / cm ² to 10 mA / cm ²
And a method for manufacturing an Al-based alloy metal wiring thin film. 3. In the method of forming the Al-based alloy metal wiring thin film, the ECR sputtering method is used, and the energy of ions flying on the film formation substrate is from 5 eV to 300 eV.
eV, the ion density is 1 mA / cm ² to 10 m
^3. The method for producing an Al-based alloy metal wiring thin film according to claim 2, wherein the energy and density of the ions are controlled by an electric field or a magnetic field so that the condition is in the range of A / cm ² . 4. The method for producing an Al-based alloy metal wiring thin film, wherein a sputtering method using a flat plate target is used, and an ion current supplied from an ECR ion source is applied to a film surface on the film formation substrate simultaneously with film formation. The energy of the ions flying and flying on the film formation substrate is 5 eV to 300 eV.
And the ion current density is 1 mA / cm ² to 10 mA.
The method for producing an Al-based alloy metal wiring thin film according to claim 2, wherein the irradiation is performed in the range of / cm ² . 5. A target for parallel plate type disk-type magnetron sputtering, an ECR ion source for irradiating a film-forming substrate with an ion stream, and energy and current density of ions provided in the ECR ion source are adjusted. Electrode group, an electrode group and a current sensor for measuring the energy and current density of ions provided directly under the film formation substrate, a substrate support mechanism for moving the film formation substrate, the target and the target. A thin film manufacturing apparatus having a shutter between the film substrate and the film substrate.