JPH0830275B2 - Rotating magnetic field type magnetron etching device - Google Patents

Rotating magnetic field type magnetron etching device

Info

Publication number
JPH0830275B2
JPH0830275B2 JP62076127A JP7612787A JPH0830275B2 JP H0830275 B2 JPH0830275 B2 JP H0830275B2 JP 62076127 A JP62076127 A JP 62076127A JP 7612787 A JP7612787 A JP 7612787A JP H0830275 B2 JPH0830275 B2 JP H0830275B2
Authority
JP
Japan
Prior art keywords
magnetic field
electrode
rotating magnetic
electromagnetic coil
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62076127A
Other languages
Japanese (ja)
Other versions
JPS63243286A (en
Inventor
正志 菊池
Original Assignee
日本真空技術株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本真空技術株式会社 filed Critical 日本真空技術株式会社
Priority to JP62076127A priority Critical patent/JPH0830275B2/en
Publication of JPS63243286A publication Critical patent/JPS63243286A/en
Publication of JPH0830275B2 publication Critical patent/JPH0830275B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、回転磁場型マグネトロンエッチング装置に
関するものである。
The present invention relates to a rotating magnetic field type magnetron etching apparatus.

[従来の技術] 従来、マグネトロンエッチング装置における磁場形成
法としては電磁コイル型と永久磁石型とが知られてい
る。
[Prior Art] Conventionally, as a magnetic field forming method in a magnetron etching apparatus, an electromagnetic coil type and a permanent magnet type are known.

電磁コイル型のマグメトロンエッチング装置は原理的
には添付図面の第6図に示すように構成されている。す
なわち、第6図に示すように対抗して配置された電極
A、Bの一方に高周波電源Cを接続し、これらの平行平
板電極間で高周波放電を発生させるようにし、上記平行
平板電極A、Bの左右両側に磁化方向の揃ったヘルムホ
ルツコイルD、Eを対に配置し、これらコイルに交流電
源Fから交流電流を流して基板G上に交番磁場を発生す
るように構成されている。
In principle, the electromagnetic coil type magmetron etching apparatus is constructed as shown in FIG. 6 of the accompanying drawings. That is, as shown in FIG. 6, a high frequency power source C is connected to one of the electrodes A and B arranged opposite to each other so that a high frequency discharge is generated between these parallel plate electrodes. Helmholtz coils D and E whose magnetization directions are aligned are arranged in pairs on both left and right sides of B, and an alternating current is applied to these coils from an AC power source F to generate an alternating magnetic field on a substrate G.

そして発生される交流磁場と高周波電場とは互いに直
交するので、エッチング電極Aの近傍に電子が閉じ込め
られ、密度の高いプラズマを形成することできる。すな
わち第7図において磁場は図面の面に垂直な手前または
奥の方向に向って発生され、電場は電極間すなわち上下
の方向に振動する。これらの磁場と電場との組み合わせ
た電磁場では、磁場の方向がIの場合には電子は右方向
へドリフト運動し、また磁場の方向がIIの場合には左方
向へドリフト運動し、その結果この電子によって発生さ
れるグロー放電は電極上に均一な濃度で存在することが
できる。
Since the generated alternating magnetic field and the high frequency electric field are orthogonal to each other, electrons are confined in the vicinity of the etching electrode A, and high-density plasma can be formed. That is, in FIG. 7, the magnetic field is generated toward the front or back direction perpendicular to the plane of the drawing, and the electric field vibrates between the electrodes, that is, in the vertical direction. In the combined electromagnetic field of these magnetic and electric fields, the electrons drift to the right when the direction of the magnetic field is I, and to the left when the direction of the magnetic field is II. The glow discharge generated by the electrons can be present at a uniform concentration on the electrodes.

[発明が解決しようとする問題点] ところで、上述のような従来の電磁コイル型のマグネ
トロンエッチング装置においては、交番磁場を用いるた
め磁場の強さに時間的に変化が生じ、プラズマを発生さ
せる放電電圧が大きく変化することになる。例えば交番
磁場の周波数を50Hzとし、高周波電源の周波数を13.56M
Hzとすると、放電電圧は第8図に示すようになる。この
図から判るように、放電電圧は交番磁場強度に強く依存
し、磁場が0ガウスのところでは放電電圧は最大とな
り、その結果、基板に衝突するイオンのエネルギが最大
となり、イオンダメージが問題となる。すなわち、従来
の装置ではプラズマを維持する放電電圧が大きく変化す
るために、放電電圧の高い時にイオンダメージが生じ得
るという問題点がある。
[Problems to be Solved by the Invention] By the way, in the above-mentioned conventional electromagnetic coil type magnetron etching apparatus, since an alternating magnetic field is used, the strength of the magnetic field changes with time, and a discharge for generating plasma is generated. The voltage will change greatly. For example, the frequency of the alternating magnetic field is 50Hz and the frequency of the high frequency power supply is 13.56M.
At Hz, the discharge voltage becomes as shown in FIG. As can be seen from this figure, the discharge voltage strongly depends on the alternating magnetic field strength, and when the magnetic field is 0 gauss, the discharge voltage becomes maximum, and as a result, the energy of the ions colliding with the substrate becomes maximum and ion damage becomes a problem. Become. That is, in the conventional device, since the discharge voltage for maintaining the plasma changes greatly, there is a problem that ion damage may occur when the discharge voltage is high.

そこで、本発明は、上記の問題点を解決するため、常
に比較的低い放電電圧でドライエッチングすることので
きる回転磁場型マグネトロンエッチング装置を提供する
ことを目的としている。
Therefore, an object of the present invention is to provide a rotating magnetic field type magnetron etching apparatus capable of always performing dry etching with a relatively low discharge voltage in order to solve the above problems.

[問題点を解決するための手段] 上記の目的を達成するために、本発明による回転磁場
型マグネトロンエッチング装置は、真空容器内に、エッ
チング電極と、このエッチング電極電極の周囲に、互い
に直角に配置した二対の電磁コイル装置と、上記二対の
電磁コイル装置の各対のコイルに90°位相のずれた電流
を供給して上記電磁コイル装置にエッチング電極の表面
に対して平行でしかも回転する磁場を発生させる交流電
源とを設けたことを特徴としている。
[Means for Solving the Problems] In order to achieve the above-mentioned object, a rotating magnetic field type magnetron etching apparatus according to the present invention includes an etching electrode in a vacuum container, and the etching electrode and the periphery of the etching electrode at right angles to each other. The two pairs of electromagnetic coil devices arranged and the coils of each pair of the above two pairs of electromagnetic coil devices are supplied with currents with a 90 ° phase shift, and the electromagnetic coil device is rotated in parallel with the surface of the etching electrode. An alternating current power supply for generating a magnetic field is provided.

電極の表面に対して平行でしかも回転する磁場を発生
する複数個の電磁コイル装置は、互いに直角に配置した
二対の電磁コイルから成ることができ、その場合、各対
のコイルには90°位相のずれた電流が流れる。
A plurality of electromagnetic coil devices that generate a magnetic field that is parallel to the surface of the electrodes and that rotates can consist of two pairs of electromagnetic coils arranged at right angles to each other, in which case each pair of coils has a 90 ° angle. Phase-shifted currents flow.

また本発明の一つの形態では、電極の表面に対して平
行でしかも回転する磁場を発生する二対の電磁コイル装
置の各々は、電極の周囲に配置された磁極部分とコイル
の巻かれる鉄心部分とを備えることができる。
In one form of the present invention, each of the two pairs of electromagnetic coil devices that generate a rotating magnetic field parallel to the surface of the electrode includes a magnetic pole portion disposed around the electrode and an iron core portion around which the coil is wound. And can be provided.

また本発明の一つの形態では、電極の表面に対して平
行でしかも回転する磁場を発生する複数個の電磁コイル
装置の各々は、電極の周囲に配置された磁極部分とコイ
ルの巻かれる鉄心部分とを備えることができる。
Further, according to one aspect of the present invention, each of the plurality of electromagnetic coil devices that generate a rotating magnetic field parallel to the surface of the electrode includes a magnetic pole portion arranged around the electrode and an iron core portion around which the coil is wound. And can be provided.

[作用] このように構成した本発明の装置の作用において、電
極の周囲に設けられた各電磁コイル装置は、隣接した電
磁コイル装置と互いに所定の位相角度の異なる電流で付
勢され、それにより電極表面上に磁場ベクトルはあたか
も回転ベクトルの動きを示し、電極表面上に安定した磁
場が形成され、放電電圧も安定ししかも比較的低く抑え
ることができる。さらに放電によって形成されるプラズ
マは回転する磁場のため偏在化することがなく、均一で
平均化させることができる。
[Operation] In the operation of the apparatus of the present invention configured as described above, each electromagnetic coil device provided around the electrode is energized by an electric current having a predetermined phase angle different from that of an adjacent electromagnetic coil device. The magnetic field vector on the surface of the electrode shows as if the motion of the rotation vector, a stable magnetic field is formed on the surface of the electrode, and the discharge voltage is stable and can be kept relatively low. Further, the plasma formed by the discharge does not become unevenly distributed due to the rotating magnetic field, and can be made uniform and averaged.

[実施例] 以下、添付図面の第1図〜第5図を参照して本発明の
実施例について説明する。
[Embodiment] An embodiment of the present invention will be described below with reference to FIGS. 1 to 5 of the accompanying drawings.

第1図および第2図には本発明の一実施例による回転
磁場型マグネトロンエッチング装置の要部の構成を概略
的に示し、1は円盤状のエッチング電極で、電極2に対
向して互いに平行に配置されている。エッチング電極1
はエッチング処理すべき基板3を支持し、そして高周波
電源4に接続されている。これらの電極1、2の周囲に
は第2図に見られるように二対の電磁コイル5a、5bおよ
び6a、6bが互いに直角に配置されている。各対の電磁コ
イル5a、5bおよび6a、6bは例えば空芯ヘルムホルツコイ
ルから成り、それぞれ異なる交流電源5c、6cに接続さ
れ、これらの交流電源5c、6cは互いに90°位相のずれた
電流をそれぞれ組み合さった対の電磁コイルに供給して
交番磁場B1、B2を発生させ、これにより、一方の対の電
磁コイル5a、5bにより発生される磁場B1と他方の対の電
磁コイル6a、6bにより発生される磁場B2との合成磁場B0
の電極表面上における磁場ベクトルは第2図に示すよう
にあたかも回転ベクトルの動きを示すようになる。
1 and 2 schematically show the configuration of the main part of a rotating magnetic field type magnetron etching apparatus according to an embodiment of the present invention, in which reference numeral 1 denotes a disk-shaped etching electrode which faces the electrode 2 and is parallel to each other. It is located in. Etching electrode 1
Supports the substrate 3 to be etched and is connected to a high frequency power supply 4. As shown in FIG. 2, two pairs of electromagnetic coils 5a, 5b and 6a, 6b are arranged around these electrodes 1, 2 at right angles to each other. Each pair of electromagnetic coils 5a, 5b and 6a, 6b is composed of, for example, an air-core Helmholtz coil and is connected to different AC power supplies 5c and 6c, respectively, and these AC power supplies 5c and 6c respectively supply currents 90 ° out of phase with each other. The alternating magnetic fields B1 and B2 are generated by supplying them to a pair of electromagnetic coils which are combined with each other, whereby the magnetic field B1 generated by the electromagnetic coils 5a and 5b of one pair and the electromagnetic coils 6a and 6b of the other pair are generated. Combined magnetic field B2 with the generated magnetic field B2
As shown in FIG. 2, the magnetic field vector on the surface of the electrode becomes as if it were a motion of the rotation vector.

各対の電磁コイル5a、5bおよび6a、6bに対する交流電
源5c、6cからの交流電力E1、E2による電極表面上におけ
る磁場強度の時間的変化は第3図に示すようになり、こ
の図から判るように磁場強度の変化は小さくほぼ一定し
たものとなり、その結果、プラズマを発生させる放電電
圧は安定したものとなり得る。
The temporal changes in the magnetic field strength on the electrode surface due to the AC power E1, E2 from the AC power supplies 5c, 6c for each pair of electromagnetic coils 5a, 5b and 6a, 6b are shown in FIG. As described above, the change in magnetic field strength is small and almost constant, and as a result, the discharge voltage for generating plasma can be stable.

第4図および第5図には本発明の変形実施例を概略的
に示し、この場合には磁化電流を節約するため、十字型
の鉄製のヨーク6と各ヨーク先端部の磁極片P1〜P4とが
設けられ、各磁極片P1〜P4はエッチング電極7の周囲に
位置決めされ、ギャップ長を小さくするように構成され
ている。各電磁コイルC1〜C4は第5図に示すように十字
型の鉄製のヨーク6に巻かれており、直径上相対する電
磁コイルC1、C2およびC3、C4は第1図および第2図に示
す実施例の場合と同様に互いに90°位相のずれた電流を
供給する異なる二つの交流電源(図示してない)にそれ
ぞれ接続される。なお、この場合、磁場波形の歪み率を
低くするために、鉄心材料としては好ましくはけい素鋼
板が使用され得る。
4 and 5 schematically show a modified embodiment of the present invention. In this case, in order to save the magnetizing current, a cross-shaped iron yoke 6 and magnetic pole pieces P1 to P4 at the tip of each yoke are formed. And the magnetic pole pieces P1 to P4 are positioned around the etching electrode 7 so as to reduce the gap length. Each of the electromagnetic coils C1 to C4 is wound around a cross-shaped iron yoke 6 as shown in FIG. 5, and the electromagnetic coils C1, C2 and C3, C4 which are diametrically opposed to each other are shown in FIGS. 1 and 2. Similar to the case of the embodiment, they are respectively connected to two different AC power supplies (not shown) which supply currents which are 90 ° out of phase with each other. In this case, a silicon steel plate can be preferably used as the iron core material in order to reduce the distortion rate of the magnetic field waveform.

ところで、図示実施例においては、回転磁場を形成す
るのに四つの電磁コイルを用いた場合について説明して
きたが、当然各コイルに供給する交流電流の位相を適当
に選択することにより電磁コイルの数を三つまたは四つ
以上にして回転磁場を形成するようにすることもでき
る。
By the way, in the illustrated embodiment, the case where four electromagnetic coils are used to form the rotating magnetic field has been described, but naturally the number of electromagnetic coils can be increased by appropriately selecting the phase of the alternating current supplied to each coil. It is also possible to form three or four or more to form a rotating magnetic field.

また、基板の代わりにスパッタターゲットを電極上に
配置すれば、マグネトロンスバッタリングカソードとし
て利用でき、ターゲットの使用効率を向上させることが
できる。さらに、図示実施例において対向電極上に基板
を配置し、プラズマCVDとして転用することも可能であ
る。
Also, if a sputter target is placed on the electrode instead of the substrate, it can be used as a magnetron buttering cathode and the use efficiency of the target can be improved. Further, in the illustrated embodiment, it is possible to dispose the substrate on the counter electrode and use it as plasma CVD.

[発明の効果] 以上説明してきたように、本発明によれば、電極の周
囲に複数個の電磁コイル装置を設け、各隣接した電磁コ
イル装置を位相のずれた交流電流で励磁させて、電極表
面上に回転する磁場を形成するように構成しているの
で、放電電圧を比較的低く維持することができ、イオン
ダメージの少ないエッチング処理が可能となり、また不
均一なプラズマを平均化することができ、均一性の高い
エッチング処理を行うことができる。
[Effects of the Invention] As described above, according to the present invention, a plurality of electromagnetic coil devices are provided around an electrode, and each adjacent electromagnetic coil device is excited by an alternating current having a phase shift to generate an electrode. Since it is configured to form a rotating magnetic field on the surface, the discharge voltage can be kept relatively low, etching processing with less ion damage can be performed, and non-uniform plasma can be averaged. Therefore, the etching treatment with high uniformity can be performed.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の一実施例による回転磁場型マグネトロ
ンエッチング装置の要部の概略正面図、第2図は第1図
の装置の一部分を省略した平面図、第3図は第1図およ
び第2図に示す装置による回転磁場の変化を示すグラ
フ、第4図は本発明の変形実施例を概略的に示す斜視
図、第5図は第4図の装置における電磁コイル、鉄心お
よび磁極片の構造の概略図、第6図は従来の電磁コイル
型のマグネトロンエッチング装置を示す概略線図、第7
図は第6図の装置における電極上の電子の振舞いを示す
拡大説明図、第8図は第6図装置における磁場強度と放
電電圧との関係を示すグラフである。 図中 1、2:電極 5a、5b:一対の電磁コイル 6a、6b:一対の電磁コイル 5c、6c:交流電源
FIG. 1 is a schematic front view of a main part of a rotating field type magnetron etching apparatus according to an embodiment of the present invention, FIG. 2 is a plan view in which a part of the apparatus of FIG. 1 is omitted, and FIG. A graph showing changes in the rotating magnetic field by the apparatus shown in FIG. 2, FIG. 4 is a perspective view schematically showing a modified embodiment of the present invention, and FIG. 5 is an electromagnetic coil, an iron core and a pole piece in the apparatus of FIG. 6 is a schematic diagram of the structure of FIG. 6, FIG. 6 is a schematic diagram showing a conventional electromagnetic coil type magnetron etching apparatus, FIG.
FIG. 8 is an enlarged explanatory view showing the behavior of electrons on the electrodes in the device of FIG. 6, and FIG. 8 is a graph showing the relationship between the magnetic field strength and the discharge voltage in the device of FIG. In the figure 1, 2: electrodes 5a, 5b: a pair of electromagnetic coils 6a, 6b: a pair of electromagnetic coils 5c, 6c: AC power supply

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】真空容器内に、エッチング電極と、このエ
ッチング電極の周囲に、互いに直角に配置した二対の電
磁コイル装置と、上記二対の電磁コイル装置の各対のコ
イルに90°位相のずれた電流を供給して上記電磁コイル
装置にエッチング電極の表面に対して平行でしかも回転
する磁場を発生させる交流電源とを設けたことを特徴と
する回転磁場型マグネトロンエッチング装置。
1. An etching electrode, two pairs of electromagnetic coil devices arranged at right angles to each other around the etching electrode in a vacuum container, and 90 ° phase for each pair of coils of the two pairs of electromagnetic coil devices. A rotating magnetic field type magnetron etching apparatus, which is provided with an alternating current power source for supplying a current deviated from the electromagnetic coil apparatus to generate a rotating magnetic field parallel to the surface of the etching electrode.
【請求項2】二対の電磁コイル装置の各々が、電極の周
囲に配置された磁極部分とコイルの巻かれる鉄心部分と
を備えている特許請求の範囲第1項に記載の回転磁場型
マグネトロンエッチング装置。
2. The rotating magnetic field type magnetron according to claim 1, wherein each of the two pairs of electromagnetic coil devices comprises a magnetic pole portion arranged around the electrode and an iron core portion around which the coil is wound. Etching equipment.
JP62076127A 1987-03-31 1987-03-31 Rotating magnetic field type magnetron etching device Expired - Fee Related JPH0830275B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62076127A JPH0830275B2 (en) 1987-03-31 1987-03-31 Rotating magnetic field type magnetron etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62076127A JPH0830275B2 (en) 1987-03-31 1987-03-31 Rotating magnetic field type magnetron etching device

Publications (2)

Publication Number Publication Date
JPS63243286A JPS63243286A (en) 1988-10-11
JPH0830275B2 true JPH0830275B2 (en) 1996-03-27

Family

ID=13596265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62076127A Expired - Fee Related JPH0830275B2 (en) 1987-03-31 1987-03-31 Rotating magnetic field type magnetron etching device

Country Status (1)

Country Link
JP (1) JPH0830275B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5308417A (en) * 1991-09-12 1994-05-03 Applied Materials, Inc. Uniformity for magnetically enhanced plasma chambers
EP0574100B1 (en) * 1992-04-16 1999-05-12 Mitsubishi Jukogyo Kabushiki Kaisha Plasma CVD method and apparatus therefor
US5695597A (en) * 1992-11-11 1997-12-09 Mitsubishi Denki Kabushiki Kaisha Plasma reaction apparatus
US5534108A (en) * 1993-05-28 1996-07-09 Applied Materials, Inc. Method and apparatus for altering magnetic coil current to produce etch uniformity in a magnetic field-enhanced plasma reactor
US5880034A (en) * 1997-04-29 1999-03-09 Princeton University Reduction of semiconductor structure damage during reactive ion etching

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5540761U (en) * 1978-09-11 1980-03-15
JPS6082661A (en) * 1983-10-11 1985-05-10 Hitachi Ltd Thin film forming device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5540761U (en) * 1978-09-11 1980-03-15
JPS6082661A (en) * 1983-10-11 1985-05-10 Hitachi Ltd Thin film forming device

Also Published As

Publication number Publication date
JPS63243286A (en) 1988-10-11

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