JPH08293474A - Apparatus and method for forming film - Google Patents

Abstract

PURPOSE: To obtain a laminated film of an insulating film and a semiconductor film excellent in a joining characteristic. CONSTITUTION: By supplying a microwave to a resonance space 2 by a microwave oscillator 3 simultaneously with the application of a magnetic field by air-core coils 5, 5', a non-product gas 18 is cyclotron-resonated and activated into an electron-excited gas 21. In a reaction space 1 outside the resonance space 2, a product gas 22 is activated by the electron-excited gas 21. The product gas 22 is sufficiently spread in a reactive space 1. To cause cyclotron resonance to occur, the pressure of a reaction space 1 and the resonance space 2 is controlled by adjusting the displacement of a turbo-molecular pump 14 and a vacuum pump 9 with a control valve 15.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention utilizes an electron cyclotron resonance of a multi-chamber system in which a plurality of reaction vessels held under 1 × 10 ^-2 torr are connected to each other to form a film. Regarding the method.

According to the present invention, a cylindrical space is provided between a plurality of reaction vessels without providing a gate valve, and impurities or the like between a plurality of coatings are substantially reduced or eliminated from being mixed with each other when the coatings are formed. The present invention relates to a film forming method.

[0003]

2. Description of the Related Art As a thin film forming technique by a gas phase reaction, there is known a plasma CVD method utilizing only glow discharge for activating a reactive gas by a high frequency or direct current electric field. This method is superior to the conventional thermal CVD method in that a film can be formed at a low temperature.

Further, in the amorphous silicon semiconductor or the like, the formed film can contain hydrogen or halogen element for neutralizing recombination centers at the same time, so that a good PI, NI or PN junction can be formed.

However, in such a glow discharge CVD method, the film formation rate is extremely slow, and it has been practically required to increase the growth rate by 10 to 500 times.

On the other hand, a CVD method using electron cyclotron resonance in which a film is formed under a pressure of 10 ⁻² to 10 ⁻⁵ torr and a high vacuum of 1 × 10 ⁻² torr or less.
The law is known. This method forms a film with a thickness of 5000 Å (angstrom) to 10 μm in a thickness of 10 to 10 μm.
It can be performed at a high speed of 0 Å (angstrom) / second. However, when forming multiple coatings in different reaction spaces,
After forming the first film in the first reaction space, the surface of the film is transferred to the second reaction space without being exposed to the atmosphere, and the second film is laminated on the first film. Is not known, and there is no attempt to carry out such a method without forming a gate valve between the first reaction space and the second reaction space during film formation. Also,
In the film forming method using this electron cyclotron resonance, Si _x C to which hydrogen or a halogen element is added
Neither an example of forming _1-x (0 <X <1) nor an example of forming a P or N type silicon semiconductor having a microcrystalline or semiamorphous structure is known.

[0007]

In order to solve these problems, the present invention uses cyclotron resonance to activate a non-product gas such as argon. Then, by activating, decomposing or reacting the reactive gas that constitutes the product gas with the resulting electrons or activated gas,
The second coating is laminated on the first coating formed on the substrate in the preceding step while reducing or removing the sputter (damage) effect that may occur in glow discharge CVD on this surface. Further, it relates to a method of laminating a third coating on the second coating in the same manner, if necessary.

According to the present invention, when the semiconductor layer is formed by using cyclotron resonance, the surface of the film formed in the previous step is exposed to 1 × 10 ^-2 without exposing it to the atmosphere.
Then, the second coating film is formed on the surface on which the film is to be formed while transferring the film while maintaining it at a vacuum degree of preferably 1 × 10 ⁻³ torr or less. As a result, the materials of the semiconductor layers are prevented from being mixed with each other at the boundary between the semiconductor layers, and a barrier layer of a lower oxide or a lower nitride is prevented from being formed in the boundary region.

Further, in addition to the method for forming a gas phase film using electron cyclotron resonance (hereinafter referred to as ECR CVD method), the present invention has a cylindrical reaction space, and the active reactive gas is more effective than the cylindrical space. It is prevented from being mixed into the space of the adjacent reaction chamber. Therefore, in the present invention, a high frequency or direct current electric field is used together, and plasma discharge energy is applied to the reactive gas so that the active state of the reactive gas is sufficiently maintained in the cylindrical space even after the resonance of resonance energy disappears.
Further, the transfer of the substrate during or before the film formation is performed simultaneously with the evacuation by the wide area turbo molecular pump.

[00010]

In a method of manufacturing a thin film type insulating gate FET having a semiconductor channel and an insulating layer adjacent to the semiconductor channel of the present invention, a first reaction chamber and a second reaction chamber which are isolated from each other are provided. Multi-chamber type C with reaction chamber
A VD deposition apparatus is provided, and an insulating layer containing oxygen or nitrogen is formed in the first reaction chamber of the multi-chamber CVD deposition apparatus by supplying a first reactive gas.
By supplying the second reactive gas in the second reaction chamber of the VD deposition apparatus, a non-single-crystal semiconductor layer for forming a channel is formed adjacent to the insulating layer, and in the first reaction chamber, the non-single-crystal semiconductor layer is formed. Only the insulating layer is formed, and only the non-single crystal semiconductor layer is formed in the second reaction chamber. From another aspect, a multi-chamber CVD deposition apparatus having a first reaction chamber and a second reaction chamber that are mutually isolated is provided,
In the first reaction chamber of the multi-chamber CVD deposition apparatus,
To form a non-single-crystal semiconductor layer for forming a channel by supplying the reactive gas of, and by supplying the second reactive gas in the second reaction chamber of the multi-chamber CVD deposition apparatus, An insulating layer containing oxygen or nitrogen is formed adjacent to the non-single crystal semiconductor layer, only the non-single crystal semiconductor layer is formed in the first reaction chamber, and only the insulating layer is formed in the second reaction chamber. To be formed.

[00011]

The pressure of the reaction space formed by this ECR technique is then 1 × 10 ^{-2 to} 5 × 10 ^-5 , particularly preferably 1
× 10 ⁻³ to 1 × 10 ⁻⁴ torr and the pressure (0.1 to 0.5 to
Since the reaction is lower than that of rr) by one digit or more, the amount of residual impurity gas in the reaction vessel is small when transferring from one reaction step to the next reaction step. Therefore, as is known in the conventional glow discharge plasma CVD method, after forming a P or N type semiconductor layer, as a pre-process for forming the next semiconductor layer,
In order to prevent the respective coatings from mixing with each other, sufficiently evacuate each reaction space after forming the coating,
After that, the step of opening the gate valve partitioning each reaction space is not required. Therefore, when the first film is, for example, a P-type or N-type first non-single-crystal semiconductor film, after the formation of this film, the introduction of the reactive gas is simply stopped, and the second film located next to the second film is formed. A substrate having a surface to be formed can be transferred to the reaction space, and an industrial through
The put can be significantly improved.

For example, when an amorphous silicon semiconductor is formed only by a direct excitation type glow discharge plasma CVD method, its growth rate is 1 Å (angstrom) / second, and it is adjacent to one reaction chamber in the multi-chamber system. At the time of transferring to the reaction chamber of No. 3, each reaction space is evacuated to a high vacuum of 10 ^-5 to 10 ^-6 torr. However, in the multi-chamber method using the ECR of the present invention, it becomes possible to transfer the substrate from one reaction space to another reaction space continuously or substantially continuously.

Further, according to the present invention, an I-type semiconductor layer (having a sufficient amount of impurities as compared with an intrinsic or substantially intrinsic or P or N-type semiconductor layer by the ECR method is formed on the surface on which the P or N-type semiconductor layer is formed. When a semiconductor layer (having a low concentration) is formed, since there is no sputtering action when forming this I-type semiconductor layer, an extremely sharp PI or NI junction interface can be formed. As a result, the PI made by the method of the present invention
When a photoelectric conversion device is manufactured using an N-junction, extremely high conversion efficiency can be expected. Experimentally, it was possible to obtain a conversion efficiency of 12.9% at 1.05 cm ² .

Further, the cyclotron resonance uses an inert gas or a non-product gas (a gas which itself produces only a gas when decomposed or reacted). Argon is a typical inert gas. However, using helium, neon, and krypton, and as an additive, S
In order to form i _x O _2-x (0 ≦ x <2) and Si ₃ N _4-x (0 <x <, a small amount of O and N may be added in addition to the inert gas.

As the reactive gas, a product gas (a gas that decomposes or reacts to produce a solid) is used. As the product gas, the silicide gas is Si _n H _{2n + 2} (n ≧
1), SiF _n (n ≧ 2), SiH _n F _4-n (1 <n <
4) ,, germanium compound is GeH ₄ , GeF ₄ , G
eH _n F _4-n (n = 1, 2, 3), Si (CH ₃ ) _n H
_4-n (n = 1, 2, 3, 4), SnCl ₄ , SnF ₂ ,
SnF ₂ and SnF ₄ are typical ones. In addition, the product gas as an additive is another product gas B.
_A P-type semiconductor and an N-type semiconductor were formed by adding a doping gas such as ₂ H ₆ , BF ₃ or PH ₃ , AsH ₃ .

These non-product gases are activated by cyclotron resonance, are mixed with the product gas in the reaction space outside this resonance region, and the excitation energy is transferred to the product gas. Then, the product gas receives an extremely large electromagnetic energy, so that the product gas can be activated almost 100%, and the energy itself can be retained as the intrinsic activation energy instead of the kinetic energy. Further, by heating the substrate at a temperature of room temperature to 700 ° C., a film can be formed on the surface on which the substrate is formed.

The present invention will be described below with reference to examples.

[0014]

Embodiment 1 FIG. 1 shows the outline of a cyclotron resonance type plasma CVD apparatus of the present invention.

In the drawing, the stainless steel reaction vessel (1 ') is provided with a load chamber and an unload chamber at the front or rear through a gate valve (not shown). Then, from this load chamber, a frame structure that forms a cylindrical space in the reaction vessel of FIG. 1 (surrounding four sides with stainless metal or an insulator, the reactive gas in the active state spreads to the inner wall of this outer vessel, (Structure that prevents the occurrence of burrs) (3
1) and (31 ′). Further, the substrate holders (10 ') arranged in the frame structure and the substrates (10) are provided as a pair so that a film is formed on both surfaces of the substrate holders (10'). In the drawing, 10 substrates are arranged in 5 holders (1
0 '). The cylindrical space of the container (1 ') is provided as the reaction space (1). This container (1 ')
A heating chamber (7 ') having a halogen lamp heater (7) is provided on the side. The frame structure and the substrate (10) are irradiated with infrared rays through the quartz window (19) and heated. further,
If necessary, a glow discharge can be installed together, so that a pair of mesh electrodes (2
3) (23 ') is provided, and a 13.56 MHz or DC electric field is applied thereto from a high frequency or DC power supply (6).

Further, a non-product gas is supplied from (18) to the resonance space (2). This resonance space (2) has an air-core coil (here used as a Helmholtz coil) on the outside thereof.
(5) and (5 ') are arranged and a magnetic field is applied. A cooling pipe (12) is arranged inside this. At the same time, through the analyzer (4) by the microwave oscillator (3), for example, 2.4
A microwave of 5 GHz is supplied to the resonance space (2) through the quartz window (29). In this space, argon is added from (18) as a non-product gas to cause resonance. And the magnetic field determined by its mass and frequency (eg 8
75 Gauss) is added by the air core coils (5), (5 ').

For this reason, the argon gas is excited and pinched by the magnetic field, and at the same time resonates, and after being sufficiently excited, electrons (21) are released into the reaction space (1) as excited argon gas. At the outlet of this resonance space (2), the product gas is discharged (22) from the doping system (13) through the nozzle (17) into the reaction space through a plurality of nozzles (17). As a result, the product gas (22) is excited and activated by the electrons and the excited gas (21). Then, care was taken by providing an insulator homogenizer (20) so that the activated gas does not flow back into the resonance space (2). In addition, the high frequency electric field generated by the pair of electrodes (23) and (23 ') is simultaneously applied to these reactive gases.

As a result, there is substantially a buffer space (30) between the resonance space (2) and the reaction space, and electrons and excited gas (21) are emitted as they are poured into the entire reaction space. There is.

That is, an effort was made to maintain the excited state of the reactive gas even when the resonance space and the surface to be formed are sufficiently separated (generally 20 to 80 cm). (When only cyclotron resonance is used, the distance between the substrate and the end of the resonance space is as short as 5 to 15 cm, which causes nonuniformity of the film thickness.)

In order to sufficiently spread the reactive gas in the reaction space (1) and to cause cyclotron resonance, the pressure in the reaction space (1) and the resonance space (2) is 1 × 10 ⁻³ to 1 × 10.
^-4 torr, for example, 3 × 10 ^-4 torr. This pressure is used together with the turbo molecular pump (14) for the exhaust system (11).
Vacuum pump (9) with control valve (15)
The exhaust amount was adjusted.

[0021]

[Experimental example 1] In this experimental example, an amorphous silicon film is formed by using the first embodiment.

That is, it has a reaction space, a height of 30 cm, a width and a depth of 35 cm, and the reaction vessel has an inner size of 40 c in height.
m, width and depth 50 cm, substrate (20 cm x 30 c
m, 10 sheets) as one batch. Furthermore, the pressure of this reaction space was set to 3 × 10 ⁻⁴ torr, and argon was supplied as a non-product gas from (18) at 200 cc / min. In addition, monosilane was supplied from (16) at 80 cc / min. In order to obtain an intrinsic semiconductor, B ₂ H ₆ / SiH ₄ may be added simultaneously at 0.1 to 10 PPM.

High frequency energy of movement is 40 W from (6)
It was supplied using the output of. Microwave is 2.45 GHz
Output of 200 to 800 W, for example 300
Supplied with W. Magnetic field (five), (five ') resonance intensity is 87
It was adjusted to resonate in the range of 5 ± 100 gauss.

The substrate (10) used was a glass substrate or a substrate on which a transparent conductive film was formed. A non-single crystal semiconductor, for example, an amorphous silicon semiconductor was formed on the formation surface, and unnecessary gas was discharged from the exhaust system (11).
Then, when the substrate temperature is 250 ° C, the film formation rate is 45Å
/ Sec could be obtained. This speed is 30 times faster than 1.5 Å (angstrom) / second obtained only by plasma CVD.

The electrical conductivity of the amorphous silicon film in the case where no impurities are added is dark conductivity 4
× 10 ^-10 (Scm ^-1 ), photoconductivity (AM1 (100 m
It was possible to obtain 6 × 10 ⁻⁵ (Scm ⁻¹ ) under the condition of W / cm ² ). This value has the same characteristics as the amorphous silicon film in the plasma CVD method known so far, and can be used also as an I-type semiconductor layer of a photoelectric conversion device having a PIN junction. High conversion efficiency can be expected.

[0026]

In ECR apparatus Experiment 2] FIG 1, P-type Si _x C
Attempts were made to form _1-x (0 <X <1) non-single crystal semiconductors.

That is, H ₂ Si (CH ₃ ) ₂ is excited as a reactive gas which is the whole product by exciting argon into the resonance space.
/ SiH ₄ = 1/7, B ₂ H ₆ / SiH ₄ = 5/1
It was set to 000. Then the microwave output of ECR is 300
W, pressure 3 × 10 ⁻⁴ torr, substrate temperature 180 ° C.,
Optical Eg = 2.4 eV Electric conductivity 3 × 10 ⁻⁶ (Scm
^-1 ) was able to be obtained.

Others are the same as in Experimental Example 1.

[0029]

[Experimental Example 3] using the ECR apparatus of FIG. 1 Si _x O
_2-x (0 ≦ x <2) or Si ₃ N _4-x (0 ≦ x <4)
Was formed.

Oxygen or nitrogen was introduced into the resonance space together with argon gas. Further, SiH ₄ was introduced from (10). Then, according to the ratio of silane and oxygen or nitrogen,
Si _x O _2-x (0 ≦ x <2) or Si ₃ N _4-x (0 ≦
The value of x for x <4) can be determined. When forming SiO ₂ and Si ₃ N ₄ with x = 0, it was sufficient to introduce oxygen or nitrogen in the same amount as argon. Others are the same as those in Experimental Example 1.

[0031]

Experimental Example 4 An attempt was made to form an N-type microcrystallized non-single-crystal semiconductor by using the ECR apparatus shown in FIG. That is, Si
H ₄ / H ₂ = 1/5 to 1/40, for example 1/30, PH
₃ / SiH ₄ = 1/100. ECR output 400
W, pressure 3 × 10 ⁻⁴ torr, and substrate temperature 250 ° C. Then, optical Eg = 1.65 eV and electric conductivity 5
It was possible to obtain 0 (Scm ⁻¹ ). Particularly, in the ECR method, even if the microwave output is increased, there is no sputtering effect on the substrate, so that the average particle size is large and 100 to 3
A polycrystal having a crystallinity of 00 Å (angstrom) is more easily formed, and as a result, the crystallinity is also glow discharge plasma CVD.
It has become possible to increase what is about 50% in the law to 70%. Comparing the amounts of hydrogen to be further diluted, SiH was obtained in the glow discharge method and the plasma CVD method.
₄ / H ₂ = 1/80 to 1/300, which was greatly diluted with hydrogen, but in the ECR method, SiH ₄ / H ₂ = 1/5 to 1
Even at / 40, a semiconductor having a sufficient microcrystalline structure could be manufactured. Others are the same as in Experimental Example 1.

[0032]

[Embodiment 2] This embodiment is a multi-chamber system in which Embodiment 1 (Experimental Examples 1 to 4) tried using FIG. 1 is integrated.

Regarding this multi-chamber system, a patent (USP 4,505,950 [1
985.3.19], USP 4,492,716 [19.
85.1.8]). However, in this embodiment, in particular, the multi-chamber system and the ECR method were integrated, and a multi-chamber system superior to the conventional one could be obtained there. The present invention will be described with reference to FIG.

FIG. 2 shows the systems I, II, III, IV, V. Here, a load chamber (system I, I ′), a first coating film, for example, a P-type semiconductor forming reaction system (system II), a second coating film, for example, an I-type semiconductor forming reaction chamber (system III), 3 is a production example of a coating film having a laminated structure of a plurality of coating films, for example, having a reaction system (system IV) for forming N-type semiconductor (system IV) and an unload system (systems V and V '). And for example PIN
The joint can be obtained as a laminate.

The chambers of each system are (1'-1 '), (1'-1), (1'-2), ...
(1'-5), (1'-5 ') respectively, especially (1-2), (1-3), (1-
4) constitutes the reaction space. The space on the load side has (1-1 ') and (1-1), and the space on the unload side has (1-5) and (1-5'). Doping system (13-2), (13-3),
It has (13-4). Further, as the exhaust system (11), turbo molecular pumps (14-1), (14-2), ... (14-5), vacuum pumps (9-1), (9
-2), ... (9-5). The systems (I ′) and (V ′) are load and unload chambers, and these are not shown.

Microwaves for ECR are systems II, III, I
At least one of V here for all (8-2), (8-3),
Helmholtz coils (5-2), (5'-
2), ... have been added. And the resonance space (2-2),
It has (2-3), (2-4) and is added as argon gas or mixed gas of this and non-product gas (18-2), (18-3), (18-4) .

A buffer space (25-2) is provided between the chambers (1-1) and (1-2), and (1-2) and (1-3) are provided.
There is a buffer space (25-3) between, and (1-3) and (1-4)
Buffer space between (25-4) and (1-4) and (1-5)
Has a buffer space (25-5) between and. These buffer spaces facilitate the transfer of the substrate (10) and the substrate holder (frame structure forming the cylindrical space) (31) to the next chamber after forming a film in a predetermined chamber (reaction vessel). In order to prevent impurities and reaction products in one space from mixing into the adjacent reaction space during film formation, the reaction space is made wider than the mean free path of gas, and each reaction space (1-1) ,. -5) are separated from each other. Furthermore, the gate valve (25-1) between the load chamber (1-1 ') and the load buffer chamber (1-1), the unload buffer chamber (1-5) and the unload chamber (1- Gate valve (25-6) between 5 ')
At the time of loading and unloading the substrate and the substrate holder, the atmosphere was prevented from entering the reaction spaces (1-2) ... (1-4).

Further, the film formation of the systems II, III and IV corresponds to Experimental Example 2, Experimental Example 1 and Experimental Example 3 respectively when a photoelectric conversion device having a PIN junction is to be produced.

Further, each of these coatings is applied to each chamber (1-2), (1-
After forming 3) and (1-4), this ECR CVD
In the method, the supply of product gas is stopped. Then, the supply of the microwave energy is stopped. Further, the non-product gas argon is continuously supplied, or after the system is temporarily stopped, the system until then is continuously evacuated sufficiently as in the film formation, and the substrate (10) and the substrate holder having the film structure ( 31)
And are moved to the adjacent reaction chamber by a moving mechanism (not shown in the drawing).

Even by such a step alone, the mixing of impurities at the PI bonding interface or the NI bonding interface can be prevented by the conventional method.
It was found that the number was extremely small compared to the discharge plasma CVD method.

Therefore, conversion efficiency as a photoelectric conversion device
12.9% (1.05cm ² ) (Open voltage 0.92V, short circuit current density 18.4mA
/ Cm ² fill factor 0.76) could be obtained.

It is presumed that the reason why such high efficiency could be obtained is that the reactive gas does not sputter the surface on which the film is formed in the ECR CVD method. Further, the pressure at the time of forming the film is 1 × 100 ^-3 to 1 × 10 ^-5 torr, which is 1/100 of 0.1 to 0.5 torr or less, for example, 3 × 10 ^-4 torr, as is known in glow discharge plasma. Is. As a result, when the introduction of reactive gas is stopped, impurities and active reactive gas can be degassed from the chamber etc. by the turbo pump in less than 1/100 of the time compared with the conventional glow discharge plasma CVD method. It has become.

[0043]

EXAMPLE 3 This example is used for a method of manufacturing a thin film type insulating gate type field effect semiconductor device. In Example 2, a semiconductor film is formed in the reaction section of the system II, and the system I is formed thereon.
At II, a silicon nitride film (Si ₃ N ₄ ) is formed. Further system IV
The silicon oxide (SiO ₂ ) is formed by. The formation of each coating was in accordance with Experimental Examples 1, 2 and 3 in Example 1.

Thus, the semiconductor film is further formed on the substrate, and the two-layer gate insulating film is further laminated thereon.

Further, with such a structure, it is possible to omit two gate valves as compared with the multi-chamber system in which a vacuum gate valve is provided in each reaction section, so that it is expected to reduce the cost as a manufacturing apparatus. . The transfer from one chamber to the next chamber can also be performed within 3 minutes, and it has a great feature that throughput can be improved. As a modification of the above-described embodiment of the present invention, first, a P-type semiconductor is formed by an optical CVD method or a known glow discharge plasma CVD method. Further, an I-type semiconductor film was formed to 0.7 μm by the ECR CVD method. Finally N
It is also effective to form a microcrystalline semiconductor of the mold by the ECR CVD method.

[0046]

In general, in the glow discharge method, pinholes having a size of 0.1 to 0.01 .mu. Are easily observed in the film, but in the cyclotron resonance plasma CVD apparatus of the present invention, the number of pinholes is about 1 /. Decrease to 10 (1 in the darkfield of × 100
~ 3 / field of view).

The present invention employs a multi-chamber method for ECR CVD.
The method was performed in each chamber. Therefore, it is possible to mass-produce as compared with the conventionally known glow discharge method and the multi-chamber method using plasma, and
The PI or NI junction interface is also steep, and the film formation rate is high, so that the amounts of oxygen and nitrogen that are inadvertently mixed in the I layer can be made 5 × 10 ¹⁸ cm ^-3 or less.

Since cyclotron resonance is used, a high film growth rate can be obtained.

The semiconductor device may be a photoelectric conversion device having a PIN or NIP junction, a light emitting element MIS.FET (field effect semiconductor device), or an SL light emitting element (super lattice element). Further, as its application, the present invention is effective for other semiconductor lasers or optical integrated circuits.

In addition to the plasma CVD method using cyclotron resonance of the present invention, a low pressure mercury lamp (185 nm) is used as a light source.
Furthermore, excimer laser (wavelength 100 ~
400 nm), argon laser, nitrogen laser, etc.
It goes without saying that the CVD action may also be used in combination.

If the product gas is not monosilane but disilane or a mixed gas of monosilane and fluorosilane (Si ₂ F ₆ ), further improvement in the film growth rate can be expected.

In the present invention, the substrate may be a silicon semiconductor, a glass substrate, a plastic substrate, a stainless substrate, or a structure in which electrodes are provided on these.

The formed amorphous semiconductor is not only Si but also SixGe _1-x (0 <X <1), SixSn _1-x (0 <X <1), CxGe _1-x
It may be (0 <X <1) or an intrinsic or substantially intrinsic P- or N-type semiconductor thereof.

[Brief description of drawings]

FIG. 1 is a cyclotron resonance type plasma CV of the present invention.
D device.

FIG. 2 is a cyclotron resonance type plasma CV of the present invention.
D device.

[Explanation of symbols]

 1 Reaction Space 1'Stainless Steel Reaction Container 2 Resonance Space 3 Microwave Oscillator 4 Analyzer 5, 5'Air Core Coil 6 High Frequency or DC Power Supply 7 Halogen Lamp Heater 7'Heating Chamber 9 Vacuum Pump 10 Substrate 10 'Substrate Holder 11 Exhaust System 12 Cooling Tube 13 Doping system 14 Turbo pump 15 Control valve 18 Non-product gas 19 Quartz window 20 Homogenizer 21 Excited gas 22 Product gas 23, 23 'Reticulated electrode 29 Quartz window 30 Buffer space 31, 31' Frame structure

Claims (12)

[Claims] 1. A reaction vessel, a gas supply means for supplying a gas to the reaction vessel, a microwave introduction means for introducing a myloelectric wave into the reaction vessel, and a magnetic field for producing electron cyclotron resonance in the reaction vessel. In a film forming apparatus having a magnetic field applying means, a substrate holding means provided in the reaction vessel, and an exhaust means for exhausting the reaction vessel, the exhaust means is provided between a vacuum pump and the reaction vessel. A film forming apparatus having a turbo molecular pump, wherein a control valve for controlling the pressure in the reaction chamber container is provided between the reaction container and the turbo molecular pump. 2. The microwave according to claim 1, wherein the microwave has a frequency of 2.45 GHz and the magnetic field has an intensity of 875.
A film forming apparatus characterized by being Gaussian. 3. The coating film forming apparatus according to claim 1, further comprising a light source for irradiating light into the reaction container. 4. A resonance chamber for generating electron cyclotron resonance, a gas supply means for supplying gas to the resonance chamber, a microwave introduction means for introducing microwaves into the resonance chamber, and a magnetic field for producing electron cyclotron resonance. In a film forming apparatus having a magnetic field applying unit for applying, a film forming chamber connected to the resonance chamber, a substrate holding unit provided in the film forming chamber, and an exhaust unit for exhausting the film forming chamber, The evacuation means has a turbo molecular pump between the vacuum pump and the film forming chamber, and a control valve for adjusting the pressure in the film forming chamber is provided between the film forming chamber and the turbo molecular pump. A film forming apparatus characterized by being provided between them. 5. The microwave according to claim 4, wherein the microwave has a frequency of 2.45 GHz and the magnetic field has an intensity of 875.
A film forming apparatus characterized by being Gaussian. 6. The film forming apparatus according to claim 4, further comprising a light source for irradiating the film forming chamber with light. 7. An electron cyclotron resonance is formed by introducing a microwave into the reaction vessel and applying a magnetic field into the reaction vessel, and the electron cyclotron resonance is used to arrange the electron cyclotron resonance in the reaction vessel. In a film forming method for depositing a film on a surface to be processed of a substrate, a vacuum pump and a reaction chamber while exhausting the inside of the reaction container by a turbo molecular pump arranged between the reaction container and the vacuum pump. A method for forming a film, wherein the pressure inside the reaction vessel is controlled by a control valve provided between the turbo molecular pump and the turbo molecular pump. 8. The frequency according to claim 7, wherein the microwave frequency is 2.45 GHz and the magnetic field strength is 875.
A coating forming method characterized by being Gaussian. 9. The film forming apparatus according to claim 7, wherein the reaction container is irradiated with light. 10. A film forming apparatus having a resonance chamber for generating electron cyclotron resonance, and a film forming chamber for forming a film connected to the resonance chamber, wherein microwaves are introduced into the resonance chamber, and An electron cyclotron resonance is formed by applying a magnetic field in the resonance chamber, and the electron cyclotron resonance is used to deposit a film on a surface to be processed of a substrate arranged in the film formation chamber. A pump and a turbo molecular pump arranged between the reaction chamber and the vacuum pump, while exhausting the inside of the chamber, by a control valve provided between the film forming chamber and the turbo molecular pump, A method for forming a film, comprising controlling the pressure in the film forming chamber. 11. The microwave according to claim 10, wherein the microwave frequency is 2.45 GHz, and the magnetic field strength is
A film forming apparatus characterized by being 875 Gauss. 12. The film forming apparatus according to claim 10, wherein the reaction chamber is irradiated with light.