JPH08288536A - Manufacture of photodiode and manufacture of ii-vi compound semiconductor layer - Google Patents

Abstract

PURPOSE: To inhibit an impurity element from intruding into an active layer consisting of a II-VI semiconductor by a method wherein the active layer is deposited on a substrate, the conductivity type of the active layer obtained in a deposition process is converted into an N-type and the conductivity type of one part of the active layer having the conductivity type converted into the N-type is converted into a P-type by a heat treatment. CONSTITUTION: A P-type II-VI compound semiconductor layer 12 containing Hg and Te is grown on a substrate 11. Then, pores, contained in this grown layer 12 and acting as a p-type dopant, are eliminated to change the conductivity type of the layer 12 into an N-type. Such a conversion of the conductivity type into the N-type is achieved by a method, in which the layer 12 is heat- treated in an Hg atmosphere and the pores in the layer 12 are substantially filled with Hg atoms. Moreover, the conductivity type of such the layer 12 is changed into a P-type by a heat treatment. In such a precess, the layer 12 is heat-treated in a vacuum and the rearrangement of atoms is generated in a II-VI compound semiconductor crystal constituting the layer 12.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates generally to an optical semiconductor device, and more particularly to a method of manufacturing a photodiode having sensitivity in the infrared wavelength range. An optical sensor having sensitivity to infrared rays, particularly infrared rays having a wavelength of 10 μm band, is important not only in the consumer field such as medicine but also in environment observation by satellites, detection of heat sources, night-vision equipment, and the like.

[0002]

2. Description of the Related Art Conventionally, as an infrared sensor suitable for such an application, a photodiode using a II-VI group compound semiconductor material containing Hg and Te has been used. For example, a ternary compound containing Hg, Cd and Te, Hg _1-x Cd _x
Te having a composition x of about 0.2 has a bandgap sensitive to infrared rays in the 10 μm band, and by using this, the photodiode for the above purpose can be constructed. On the other hand, the ternary compound already has the p-type conductivity at the time of growing the semiconductor layer, and accordingly, a manufacturing process different from that of the conventional photodiode for visible light is required.

FIGS. 8A to 8F show steps of manufacturing a photodiode using the II-VI group compound semiconductor material. Referring to FIG. 8A, CdZnTe or C
Composition (Hg _1-x Cd _x ) Te on the substrate 1 made of dTe
The ternary II-VI group semiconductor layer 2 having (x≈0.2) is epitaxially grown by liquid phase epitaxy, MOCVD, or bulk growth. The semiconductor layer 2 thus grown has vacancies acting as a p-type dopant in the crystal, and as a result, grows as a p-type crystal. Layer 2 typically has a carrier concentration of 10 ¹⁷ cm ^-3 .

Since the carrier concentration is too high to form a pn junction acting as a photodiode in the semiconductor layer 2 by introducing an n-type impurity, the following FIG.
By annealing the structure of (A) in Hg vapor at a temperature of 350 to 400 ° C., a part of the holes is filled with Hg, and the carrier concentration is set to a value of about 1 to 5 × 10 ¹⁶ cm ^−3. Control.

Next, in the step of FIG. 8B, the surface of the structure of FIG. 8A is subjected to mechanical processing such as chemical mechanical polishing to make the thickness of the semiconductor layer 1 a predetermined value, for example, Set to 20 μm. As a result of such surface processing, in the structure obtained in the step of FIG. 8B, the semiconductor layer 2 has a flat main surface, and the layer 2
Thickness is uniform.

Next, the surface of the structure of FIG. 8B is protected by a resist pattern (not shown), and B ⁺ ions are ion-implanted in this state to form an n-type diffusion region 2a in the semiconductor layer 2. To form. As a result, the structure of FIG. 8C is obtained. Further, in the process of FIG.
8A and 8B, a protective film 3 made of ZnS is deposited so as to cover the p-type semiconductor layer 2 and the n-type diffusion region 2a formed therein, and the protective layer 3 is further patterned to form the structure shown in FIG.
The opening 3 exposing the diffusion region 2a as shown in FIG.
a is formed. Further, as shown in FIG. 8F, the electrode 4 is formed in the opening to complete the photodiode.

In the photodiode having the structure shown in FIG. 8F, when incident infrared light is incident on the back surface of the substrate 1, for example, a pn formed between the n-type diffusion region 2a and the p-type semiconductor layer 2 is formed. Carriers are excited in the junction, and a potential difference is generated between the electrode 4 and another electrode formed on the substrate 1.

[0008]

In such an infrared photodiode, as described above, the p-type semiconductor layer 2 includes vacancies that act as p-type dopants, and such vacancies include Li and Na. Alternatively, impurities such as K and Ag easily infiltrate, resulting in a problem that the impurity concentration distribution changes or carrier traps occur.
This causes problems such as an increase in the dark current of the photodiode. The problem of this impurity is (Hg, Cd) T
It is known to occur when the e layer is grown by liquid phase epitaxy (Astles, MG, et al., J. Crystal.
Growth, 91 (1989) 1-10), MOCVD or other growth methods.

Therefore, an object of the present invention is to provide a novel and useful method for manufacturing a photodiode, which solves the above problems. A more specific object of the present invention is (H
It is an object of the present invention to provide a method for manufacturing a photodiode capable of suppressing the entry of an impurity element into an active layer made of a II-VI group semiconductor containing Hg and Te, such as g, Cd) Te.

[0010]

The present invention has the above-mentioned object, as described in claim 1, including Hg and Te.
In a method of manufacturing a photodiode having an active layer made of a II-VI group compound semiconductor, a deposition step of depositing the active layer on a substrate; converting the conductivity type of the active layer obtained in the deposition step into an n-type A first conductivity type converting step;
A second conductivity type conversion step of converting a part of the conductivity type of the active layer converted to a p-type into a p-type by a heat treatment, or as described in claim 2. 5. The manufacturing method according to claim 1, wherein the first conductivity type conversion step comprises a heat treatment step in an Hg atmosphere in which vacancies in the active layer are filled with Hg, or 3. The manufacturing method according to claim 1 or 2, wherein the second conductivity type conversion step includes a heat treatment step of the active layer.
Alternatively, as described in claim 5, the heat treatment step constituting the second conductivity type conversion step is a vacuum heat treatment step, or the manufacturing method according to claim 4, or claim 6. As described above, the heat treatment process includes 30
It is carried out at a temperature of 0 ° C. or lower, or according to claim 7, or in the active layer, corresponding to the n-type region of the photodiode. The method of manufacturing according to claim 1, further comprising the step of introducing an n-type impurity, or the step of introducing the n-type impurity comprises the step of introducing the n-type impurity. The process of introducing the n-type impurity according to the manufacturing method according to claim 7, which is after the step, or according to claim 9,
9. The conductive type conversion step according to claim 8 is performed.
According to the manufacturing method described above, or as described in claim 10, further comprising a surface processing step of planarizing the surface of the active layer, the surface processing step being performed after the first conductivity type conversion step. The protective film deposition step of depositing a protective film on the surface of the active layer by the manufacturing method according to claim 1 or as described in claim 11, and n of a photodiode on the protective film. Corresponding to the mold area,
11. The manufacturing method according to claim 10, further comprising a patterning step of forming an opening, wherein the protective film depositing step and the patterning step are performed after the first conductivity type converting step. Or a step of depositing a II-VI group compound semiconductor layer containing Hg and Te on a substrate, wherein: the conductivity type of the II-VI group compound semiconductor layer is converted to n type; And n-type II-VI
By the method for growing a II-VI group compound semiconductor semiconductor layer, which comprises the step of converting the conductivity type of the group compound semiconductor layer to p type,
To achieve.

[0011]

FIG. 1 shows the principle of the present invention. Referring to FIG. 1A, a II-VI group compound semiconductor layer 12 containing Hg and Te is grown on a substrate 11 with a p-type conductivity type. Next, in the step of FIG. 1B, the conductivity type of the semiconductor layer 12 is set to n by filling the holes contained in the compound semiconductor layer 12 thus grown and having the conductivity type of p type. Change to type. The conversion of the conductivity type to the n-type is achieved by subjecting the compound semiconductor layer 12 to a heat treatment in an Hg atmosphere so that substantially all the holes in the layer 12 are filled with Hg atoms.

Further, in the step of FIG. 1C, the conductivity type of the semiconductor layer 12 is changed to p type by heat treatment. In such a step, the semiconductor layer 12 is heat-treated in vacuum, resulting in rearrangement of atoms in the II-VI group compound semiconductor crystal forming the layer 12, and the layer 12 exhibits a p-type conductivity type.

According to the present invention, as a result of filling the holes in the semiconductor layer 12 in the step of FIG.
It does not penetrate into it and the layer 12 can be subjected to the required treatment without contamination. Furthermore, FIG.
In the step (C), the conductivity type of the layer 12 is converted to the p-type again, so that the p-type semiconductor layer 12 with less impurities can be obtained.

According to the feature of the present invention described in claim 1, when the conductivity type of the active layer is converted to n-type, a substantial amount of holes contained in the active layer is filled, As a result, the invasion of impurities into the active layer through such holes is suppressed. In addition, by performing the second conductivity type conversion step after the first conductivity type conversion step,
The pn junction required for the photodiode can be formed.

According to a second aspect of the present invention, the active layer is formed to fill the holes in the active layer. II
-By using Hg, which is a constituent element of Group VI semiconductors,
Stable conductivity type control is possible. According to the features of the present invention as set forth in claim 3, it becomes possible to convert the active layer into an n-type by performing the heat treatment at a temperature of about 250 ° C.

According to the features of the present invention described in claims 4 to 6, by performing the second conductivity type conversion step by a heat treatment step, an element is contained in the II-VI group crystal forming the active layer. Rearrangement occurs, which allows conversion of the conductivity type to the desired p-type. According to a feature of the present invention described in claim 7, even if the active layer is converted to p-type by the second conductivity type conversion step by introducing an n-type impurity into the active layer, The n-type region of the diode is n
The mold remains and the desired pn junction is formed. As described in claim 8, the step of introducing the n-type impurity is preferably after the first conductivity type conversion step,
As described in claim 9, it may be after the second conductivity type conversion step.

According to the features of the present invention as set forth in claims 10 and 11, the steps of flattening the surface of the active layer, patterning, etc., which tend to invite impurities into the active layer, are carried out. By carrying out after the conversion step, it becomes possible to suppress the intrusion of impurities into the active layer.

According to a feature of the present invention described in claim 12,
When converting the conductivity type of the II-VI group compound semiconductor layer to the n-type, a substantial amount of pores contained in the compound semiconductor layer is filled, and as a result, the compound semiconductor through the pores. Intrusion of impurities into the layer is suppressed. Further, by performing the p-type conductivity type conversion step after the n-type conductivity type conversion step, a II-VI group compound semiconductor layer with few impurities can be formed.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described below with reference to FIGS. In the process of FIG. 2A, the composition (Hg _1-x C is formed on the substrate 11 made of CdTe.
A ternary II-VI semiconductor layer having d _x ) Te (x≈0.2) and having a band edge in the 10 μm band is deposited as the active layer 12 by the MOCVD method. However, the method of depositing the active layer 12 is not limited to the MCVD method, and other methods such as liquid phase epitaxy may be used. As described above, the II-VI group active layer containing Hg and Te thus formed has Hg vacancies, and impurities easily enter. Further, the II-VI group active layer contains voids, and as a result, has a p-type conductivity type.

Next, in the step of FIG. 2B, the structure of FIG. 2A is immediately heat-treated in an Hg atmosphere to fill the Hg holes in the layer 12. This step is performed when the formation of the active layer 12 is performed by the MOCVD apparatus.
Subsequent to the deposition of 2, it can be carried out in the same apparatus, the ingress of impurities being virtually completely eliminated. As a result of such processing, the conductivity type of the active layer 12 changes to n-type.
Further, when the layer 12 is formed by liquid phase epitaxy or the like, such heat treatment is performed in another heat treatment apparatus. Also in this case, the heat treatment is preferably performed immediately after the layer 12 is deposited.

FIG. 4 shows an example of a heat treatment process for the active layer 12. Referring to FIG. 4, the structure obtained in the step of FIG. 2A is held on a holder 22 provided at one end of the heat treatment tube 21. A container 2 holding Hg at the other end of the reactor 21
3, the whole heat treatment tube 21 is heated in a heating furnace. As a result, the temperature inside the heat treatment tube 21 is generally high in the holder 22, as shown in FIG.
In the Hg container 23, a temperature distribution in which the temperature is lowered is generated.
In the illustrated example, the Hg in the container 23 is heated to a temperature of about 250 °. By such heat treatment, H evaporated in the low temperature range
The g reaches the holder 22 on the higher temperature side, penetrates into the retained active layer 12, and fills the holes in the layer 12. In addition, with the heat treatment, the p-type active layer 12 in the sample is p-type.
Type or n-type.

FIG. 5 shows the p-type carrier concentration produced in the active layer 12 by the above heat treatment as a function of the treatment temperature. However, Hg in the container 23 is kept at a temperature of 241 ° C. As can be seen from FIG. 5, the active layer 22
The concentration of the p-type carrier in the inside is the temperature of the holder 22,
That is, it changes depending on the heat treatment temperature of the sample, and if the heat treatment temperature is high, the concentration of the p-type carrier increases, and if it is low, it decreases. That is, the relationship in FIG. 5 indicates that the carrier concentration can be controlled by the heat treatment temperature.

Conventionally, such a heat treatment apparatus is shown in FIG.
Was used to control the concentration of the p-type carrier in the p-type active layer 2 in the above process, the heat treatment of the active layer 12 is performed at 250 ° C. instead of the conventional temperature of about 350 ° C.
The conductivity type is changed to the n-type by completely filling the Hg vacancy at a low temperature. Generally, (Hg, C
d) In the Te crystal, when the p-type carrier concentration is higher than 10 ¹⁴ cm ^-3 , the p-type conductivity type appears, but when it is lower than that, the n-type conductivity type appears. In the heat treatment in Hg vapor, the Hg vacancy concentration, that is, the carrier concentration is determined by the combination of the heat treatment temperature and the Hg vapor pressure, and FIG. 5 shows an example thereof.

By the heat treatment in the Hg atmosphere at such a low temperature, in the structure held on the holder 22, the voids in the active layer 12 are substantially completely filled. Next, in the step of FIG. 2C, the surface of the active layer 12 is subjected to chemical mechanical polishing to be flattened. Also, as a result of such chemical mechanical polishing, the thickness of layer 12 is set to about 20 μm.

Further, in the step of FIG. 3D, the active layer 12 is
An n-type dopant is ion-implanted into a predetermined region on the surface to form one or a plurality of n ⁺ -type diffusion regions 12a. For example, B ⁺ is used as the n ⁺ type dopant. Figure 3 (D)
3E, as shown in FIG. 3E, a protective layer 13 made of ZnS is deposited on the active layer 12, and the structure obtained in this way is typically 200 to 3 in vacuum.
Heat treatment is performed at a temperature of 00 ° C. As a result, in the (Hg, Cd) Te crystal forming the layer 12, Hg, Cd, T
The rearrangement of e-atoms occurs and layer 12 is transformed into p-type, except where it was previously n ⁺ -type doped.

FIG. 6 shows changes in the concentration of p-type carriers generated in the active layer 12 as a result of such heat treatment in vacuum. As can be seen from FIG. 6, the p-type carrier concentration increases with the heat treatment temperature. That is, it is understood that the p-type carrier concentration in the active layer 12 can be controlled by the temperature during the heat treatment. Heat treatment in vacuum at 200-300 ° C
By carrying out at a temperature in the range, a p-type carrier concentration of about 10 ¹⁶ cm ^-3 can be realized. In such heat treatment under vacuum or reduced pressure, unlike the heat treatment in Hg vapor described above, the carrier concentration is determined by the equilibrium inside the crystal such as the equilibrium between Hg atoms and Hg vacancies located in the interstitial positions.

As a result of the above vacuum heat treatment, in the structure of FIG. 3E, the pn corresponding to the peripheral portion of the n-type region is formed in the active layer 12.
A bond is formed. Next, in the step of FIG.
The opening 1 is formed in the protective layer 13 so as to correspond to the diffusion region 12a.
3a is formed, and as a result, the surface of the diffusion region 12a is exposed in the opening 13a. Therefore, FIG. 3 (G)
By forming the electrode 14 in the opening in the step (1), a photodiode having sensitivity to infrared rays in the 10 μm band can be obtained.

In the manufacturing process of the photodiode described above, the heat treatment process for converting the active layer into p-type is shown in FIG.
The process is not limited to the process (E), and for example, FIG.
You may perform in the process of (D), or the process of FIG. 3 (F). When the conductivity type of the active layer is changed to p type in the step of FIG. 3D, the layer 1 is formed at the stage of forming the diffusion region 12a.
Therefore, it is not necessary to dope the diffusion region 12a to an additional n ⁺ type in advance, and it is sufficient to dope it to a required concentration from the beginning.

Further, when the conductivity type of the active layer 12 is changed in the step of FIG. 3F, Hg can enter and leave the layer 12 through the opening 13a. Therefore, the device of FIG. 4 was used. A conventional p-type carrier concentration control method can be applied. In this case, as a result of heat treatment at a high temperature in an Hg atmosphere, Hg escapes through the opening 13a, leaving a hole in the active layer 12 that acts as a p-type dopant. However, when such a p-type heat treatment is performed, impurities easily enter the p-type region in the active layer, so that the heat treatment step has a lot of chances of contamination by impurities (FIG. 2).
(C)) and the patterning step of the protective layer 13 (see FIG. 3).
It is preferable to carry out after (F)).

FIG. 7 shows the concentration of impurities contained in the active layer 2 in the photodiode manufactured by the conventional manufacturing method shown in FIG. 8 in the photodiode manufactured by the method according to the present invention shown in FIGS. FIG. 6 is a diagram showing a comparison between the concentration of impurities contained in the active layer 12 and each stage of the photodiode manufacturing process. However, FIG. 7 shows an example in which Na is used as an impurity.

Referring to FIG. 7, when the amount of impurities (Na) contained in the substrate 1 is large in the conventional method, immediately after the active layer 2 is grown (as grown), a p-type carrier concentration control step (p treatment) is performed. ), And at any stage after the completion of the photodiode including the chemical mechanical polishing step of layer 2, the impurity concentration falls within the range of 10 ¹⁵ to 10 ¹⁶ cm ⁻³ .
Even when the substrate 1 containing few impurities is used, the impurity concentration in the active layer 2 is still 10 after the photodiode is completed.
^It falls within the range of ¹⁵ to 10 ¹⁶ cm ^-3 .

On the other hand, in the present invention, the conductivity type of the active layer 12 is converted to the n-type (n) regardless of whether the impurity (Na) concentration in the substrate 11 is originally high or low.
After the treatment, the impurity concentration decreases to about 10 ¹³ cm ^-3 ,
This state of low impurity concentration is maintained even after the diode structure forming process including the chemical mechanical polishing process. In particular, p-type conductivity conversion treatment is performed in vacuum at 200 to 300 ° C.
When the heat treatment (vacuum p treatment) in the temperature range of 10 is performed, the impurity concentration is 10 ¹³ even after the diode is completed.
It is kept at about cm ^-3 . Also, p at such low temperature
When the heat treatment for converting the conductivity type into the mold is performed in the Hg atmosphere, the impurity concentration slightly increases, but remains at about 10 ¹⁴ cm ^-3 . Further, in the conventional process of converting the conductivity type to p-type, the vacancy control at a high temperature of around 350 ° C., which is performed for the active layer immediately after the deposition in the step of FIG. 8A. When the process is performed on the active layer 12, the concentration of vacancies in the active layer increases, and as a result, the amount of impurities taken in increases. The results of FIG. 7 indicate that the amount of impurities contained in the active layer 12 is still lower than the value of the present case in the case of the present invention when the amount of impurities in the original substrate is large.

[0033]

According to the features of the present invention described in claim 1,
When the conductivity type of the active layer is converted to n-type, a substantial amount of holes contained in the active layer are filled, and as a result, impurities penetrate into the active layer through the holes. Is suppressed. Further, by performing the second conductivity type conversion step after the first conductivity type conversion step, a pn junction required for the photodiode can be formed in the active layer.

According to a second aspect of the present invention, the active layer is formed so as to fill the holes in the active layer.
By using Hg, which is a constituent element of the II-VI group semiconductor, it is possible to stably control the conductivity type. According to the features of the present invention as set forth in claim 3, it becomes possible to convert the active layer into an n-type by performing the heat treatment at a temperature of about 250 ° C.

According to the features of the present invention described in claims 4 to 6, by performing the second conductivity type conversion step by a heat treatment step, the element is contained in the II-VI group crystal forming the active layer. Rearrangement occurs, which allows conversion of the conductivity type to the desired p-type. According to a feature of the present invention described in claim 7, even if the active layer is converted to p-type by the second conductivity type conversion step by introducing an n-type impurity into the active layer, The n-type region of the diode is n
The mold remains and the desired pn junction is formed. As described in claim 8, the step of introducing the n-type impurity is preferably after the first conductivity type conversion step,
As described in claim 9, it may be after the second conductivity type conversion step.

According to the features of the present invention as set forth in claims 10 and 11, the step of flattening the surface of the active layer, patterning, or the like, which tends to introduce impurities into the active layer, is performed. By carrying out after the conversion step, it becomes possible to suppress the intrusion of impurities into the active layer.

According to a feature of the present invention described in claim 12,
When converting the conductivity type of the II-VI group compound semiconductor layer to the n-type, a substantial amount of pores contained in the compound semiconductor layer is filled, and as a result, the compound semiconductor through the pores. Intrusion of impurities into the layer is suppressed. Further, by performing the p-type conductivity type conversion step after the n-type conductivity type conversion step, a II-VI group compound semiconductor layer with few impurities can be formed.

[Brief description of drawings]

FIG. 1 is a diagram showing the principle of the present invention.

FIG. 2 is a diagram (No. 1) showing an embodiment of the present invention.

FIG. 3 is a diagram showing an example of the present invention (No. 2).

FIG. 4 is a diagram illustrating a process of converting the conductivity type of a semiconductor layer to p-type or n-type used in an example of the present invention.

5 is a diagram showing a relationship between a heat treatment temperature and a p-type carrier concentration in a semiconductor layer in the device of FIG.

FIG. 6 is a diagram illustrating a process of converting a conductivity type of a semiconductor layer to a p-type used in an embodiment of the present invention.

FIG. 7 is a diagram showing the amount of impurity elements contained in a photodiode manufactured by the method according to the present invention and the amount of impurity elements contained in a photodiode manufactured by the conventional method in comparison.

FIG. 8 is a diagram showing a manufacturing process of a conventional photodiode.

[Explanation of symbols]

 1, 11 Substrate 2, 12 Active layer 2a, 12a Diffusion region 3, 13 Protective layer 3a, 13a Contact hole 4, 14 Electrode

Claims (12)

[Claims] 1. A method of manufacturing a photodiode having an active layer made of a II-VI group compound semiconductor containing Hg and Te, comprising: a deposition step of depositing the active layer on a substrate; A first conductivity type conversion step of converting the conductivity type of the active layer into an n-type; and a second conductivity type conversion of converting a part of the conductivity type of the active layer converted into the n-type into a p-type by heat treatment. And a manufacturing method. 2. The manufacturing method according to claim 1, wherein the first conductivity type conversion step comprises a heat treatment step in an Hg atmosphere in which vacancies in the active layer are filled with Hg. 3. The manufacturing method according to claim 2, wherein the heat treatment step is performed at a temperature of about 250 ° C. 4. The manufacturing method according to claim 1, wherein the second conductivity type conversion step includes a heat treatment step of the active layer. 5. The manufacturing method according to claim 4, wherein the heat treatment step constituting the second conductivity type conversion step is a vacuum heat treatment step. 6. The manufacturing method according to claim 4, wherein the heat treatment step is performed at a temperature of 300 ° C. or lower. 7. An n-type photodiode is provided in the active layer.
The manufacturing method according to claim 1, further comprising the step of introducing an n-type impurity corresponding to the mold region. 8. The manufacturing method according to claim 7, wherein the step of introducing the n-type impurities is performed after the step of converting the first conductivity type. 9. The manufacturing method according to claim 8, wherein the step of introducing the n-type impurity is after the step of converting the second conductivity type. 10. The method according to claim 1, further comprising a surface processing step of planarizing a surface of the active layer, the surface processing step being performed after the first conductivity type converting step. Production method. 11. A protective film deposition step of depositing a protective film on the surface of the active layer, and a patterning step of forming an opening in the protective film corresponding to an n-type region of a photodiode. The manufacturing method according to claim 10, wherein the film deposition step and the patterning step are performed after the first conductivity type conversion step. 12. A step of depositing a II-VI group compound semiconductor layer containing Hg and Te on a substrate; a step of converting a conductivity type of the II-VI group compound semiconductor layer to an n-type; of
A method for growing a II-VI group compound semiconductor, comprising the step of converting the conductivity type of the II-VI group compound semiconductor layer to a p-type.