JPH08288483A - Solid-state image pickup element - Google Patents

Abstract

PURPOSE: To provide a solid-state image pickup element for producing quality images by preventing partial hindrance of incident light during operation to eliminate irregular sensitivity. CONSTITUTION: A vertical register part 2 consisting of an impurity diffusion layer is formed in an Si board 1 as a substrate and a sensor part 3 consisting of an impurity diffusion layer is formed in a position excepting the vertical register part 2. A transfer electrode 5 which is formed through an insulation film 4 and whose surface is covered with an insulation film 6 is arranged above the vertical register part 2 on the Si board 1 and the transfer electrode 5 is covered with a light screening film 20. The light screening film 20 is formed flat in an upper surface side of the transfer electrode 5. A flattened film 9 is formed on the Si board 1 to cover the light screening film 20. A light screening colored layer 21 is formed above the vertical register part 2 on the flattened film 9.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image sensor,
In particular, it relates to a CCD type solid-state image sensor.

[0002]

2. Description of the Related Art A conventional CCD type solid-state image sensor (hereinafter, referred to as
The CCD solid-state image pickup device) has a structure shown in FIG. 9, for example. That is, the silicon (Si) substrate 1 is formed with the vertical register portion 2 and the sensor portion 3 formed of an impurity diffusion layer, and the insulating film 4 is provided on the Si substrate 1 and above the vertical register portion 2. Transfer electrodes 5 are formed. The transfer electrode 5 is covered with an insulating film 6, and a first film made of a thick film of aluminum (Al) is formed on the transfer electrode 5 and directly above the vertical register portion 2 with the insulating film 6 interposed therebetween.
A light shielding film 7 is formed. Usually, this first light-shielding film 7
Is formed by wet etching which is isotropic etching, and therefore the upper surface of the first light-shielding film 7 is composed of a flat upper surface portion 7a and tapered portions 7b formed on both sides thereof.

Further, the transfer electrode 5 and the first light-shielding film 7
Is covered with a second light shielding film 8 made of a thin film of Al. The first light-shielding film 7 and the second light-shielding film 8 are provided to prevent light from leaking into the vertical register section 2. A flattening film 9 is formed on the Si substrate 1 so as to cover the second light-shielding film 8, and a light-shielding dyeing layer 10 is formed on the flattening film 9 and above the vertical register portion 2. There is. The light-shielding dyeing layer 10 is provided in order to suppress flare that occurs when light is reflected by the second light-shielding film 8.
For example, it is dyed black. On the flattening film 9, an on-chip microlens 11 for collecting light on the sensor unit 3 in a state of covering the light-shielding dyeing layer 10 is provided.

By the way, in the CCD solid-state image pickup device provided with the light-shielding dyeing layer 10, the light-shielding dyeing layer 10 is used.
Is formed on the flattening film 9 as shown in FIGS. Note that the Si substrate side is omitted in FIG. 10. First, as shown in FIG. 10A, the flattening film 9 is coated with a dyed layer 101 having a so-called negative type property that the exposed portion is cured. Next, as shown in FIG. 10B, the layer 101 to be dyed is exposed and developed using a photomask 60, and the light-shielding dye layer 10 is formed.
Pattern 102 is formed. Subsequently, as shown in FIG. 10C, the obtained pattern 102 is dyed to form the light shielding dye layer 10.

[0005]

However, in the formation of the light-shielding dyeing layer 10 shown in FIG. 10, since the dyed layer 101 has a negative type property as described above, the following will occur during exposure. In addition, the second light-shielding film 8 is affected by the exposure light 61 (hereinafter referred to as exposure light) being reflected.

That is, since the first light-shielding film 7 has the taper portion 7b on the upper surface thereof, the taper portion is also formed on the surface of the second light-shielding film 8 which covers the first light-shielding film 7. Become. Therefore, when the exposure light 61 is incident on the tapered portion of the surface of the second light-shielding film 8 as shown in FIG. 11 during the exposure of the dyed layer 101, the exposure light 61 is reflected obliquely upward as indicated by the broken line arrow. . As a result, in the portion of the dyed layer 101 to be exposed, the flattening film 9 side is exposed to a size larger than a desired dimension and hardened, and when developed, the pattern 102 is formed in a shape with a skirt.

Then, the obtained pattern 102 is formed in a state where the hem is severely stretched, and when it is dyed as it is, as shown in FIG. 12, a part of the incident light 62 is generated when the CCD solid-state image pickup device is operated. The so-called incident light 62, which is shielded by the skirt portion 10a, is eclipsed, and C
This causes uneven sensitivity in the CD solid-state image sensor. The present invention has been made to solve the above problems, and an object of the present invention is to provide a solid-state image sensor having good image characteristics by preventing uneven sensitivity due to eclipse of incident light during operation.

[0008]

According to another aspect of the present invention, there is provided a solid-state image pickup device in which a vertical register portion made of an impurity diffusion layer is formed on a substrate and an impurity diffusion layer is made at a position other than the vertical register portion. A sensor unit is formed. A transfer electrode, which is formed via an insulating film and whose surface is covered with an insulating film, is arranged on the base body and above the vertical register portion, and the transfer electrode is covered with a light shielding film. This light shielding film is formed flat on the upper surface side of the transfer electrode. A flattening film is formed on the base in a state of covering the light-shielding film, and a light-shielding dyeing layer is formed on the flattening film and above the vertical register portion.

In the solid-state image pickup device according to the second aspect of the present invention, the vertical register section, the sensor section and the transfer electrode are formed as in the first aspect of the invention. The transfer electrode is covered with a light shielding film, and at least the upper surface side of the transfer electrode is covered with an antireflection film. And on the base,
A flattening film is formed in a state of covering the light-shielding film, and a light-shielding dyeing layer is formed on the flattening film as in the case of the above-mentioned invention.

In the solid-state image pickup device according to a third aspect of the present invention, the vertical register section, the sensor section and the transfer electrode are formed similarly to the first aspect of the present invention, and the first electrode is provided on the transfer electrode.
A light shielding film is formed. The side surface of the first light-shielding film is formed substantially perpendicular to the substrate surface, and the first light-shielding film and the transfer electrode are covered with the second light-shielding film. A flattening film is formed on the substrate in a state of covering the second light-shielding film, and a light-shielding dyeing layer is formed on the flattening film as in the invention according to claim 1.

In the solid-state image pickup device according to a fourth aspect of the present invention, the vertical register section, the sensor section and the transfer electrode are formed similarly to the first aspect of the present invention, and the first electrode is formed on the transfer electrode.
A light shielding film is formed. Further, the transfer electrode and the first light-shielding film are covered with the second light-shielding film, and the flattening film is formed on the base so as to cover the second light-shielding film. Further, a light-shielding dyeing layer is formed on the flattening film as in the case of the above-mentioned invention. The first light-shielding film has a flat upper surface portion, and the width of the upper surface portion is formed to be substantially the same as the width of the light-shielding dyeing layer or wider than the width of the light-shielding dyeing layer. It is located directly below the light-shielding dyeing layer.

[0012]

According to the solid-state image pickup device of the invention described in claim 1,
Since the light-shielding film is formed flat on the upper surface side of the transfer electrode, in the process of forming the light-shielding dyeing layer, at the time of exposing the dyed layer that is the precursor of the light-shielding dyeing layer, the light for exposure (hereinafter, exposure Exposure light is reflected on the upper surface of the light shielding film as it is in the incident direction. As a result, the dyed layer is exposed and cured only in the desired portion,
After development, it is formed into a desired pattern of a light-shielding dyeing layer having no skirt portion. Therefore, the solid-state imaging device of the present invention has the light-shielding dyeing layer formed in a desired shape.

According to the solid-state imaging device of the second aspect of the present invention, since the second light-shielding film is covered with the antireflection film, even if exposure light enters the antireflection film in the process of forming the light-shielding dyeing layer. , Its reflection is suppressed. So even if the first
By etching for forming the light-shielding film, a taper portion is formed on the upper surface of the first light-shielding film, and thus even if the taper portion is formed on the surface of the antireflection film, reflection of exposure light is prevented. The solid-state image pickup device of the present invention has a light-shielding dyeing layer having a desired shape as in the first aspect of the invention.

In the solid-state imaging device of the third aspect of the present invention, the side surface of the first light-shielding film is formed substantially perpendicular to the surface of the substrate, and the second light-shielding film is substantially along the surface shape of the first light-shielding film. Therefore, the upper surface side of the transfer electrode in the second light-shielding film is composed of a vertical portion covering the side surface of the first light-shielding film and a flat upper surface portion having no other tapered portion. It will be. In the process of forming the light-shielding dyeing layer, the exposure light is incident almost perpendicularly to the surface of the substrate, so that the exposure light does not enter the vertical portion of the second light-shielding film. Therefore, the exposure light is obliquely above the second light-shielding film. Is prevented from being reflected. Therefore, the solid-state image pickup device of the present invention has the light-shielding dyeing layer of a desired shape as in the invention of the first aspect.

In the solid-state imaging device of the fourth aspect of the present invention, the width of the upper surface portion of the first light-shielding film is formed to be substantially equal to or wider than the width of the light-shielding dyeing layer, and the upper surface portion is light-shielding dyeing layer. Since the second light-shielding film formed along the surface shape of the first light-shielding film has a width larger than the width of the light-shielding dyeing layer on the upper surface side of the transfer electrode, it is located immediately below the The upper surface portion located immediately below and the taper portion extending from the peripheral edge of the upper surface portion are configured. Therefore,
Even if the exposure light is incident on the second light-shielding film in the process of forming the light-shielding dyeing layer, the exposure light is reflected on the upper surface portion, and the exposure light is prevented from being reflected obliquely upward. The solid-state image pickup device of 1 has a light-shielding dyeing layer of a desired shape as in the invention of claim 1.

[0016]

Embodiments of the solid-state image pickup device of the present invention will be described below with reference to the drawings. In the present embodiment, the present invention is C
A case where the present invention is applied to a CD type solid-state image pickup device (hereinafter referred to as a CCD solid-state image pickup device) will be described.

FIG. 1 is a side sectional view of a main portion of a first embodiment of the present invention. As shown in FIG. 1, a silicon (Si) substrate 1 serving as a substrate of the present invention comprises a p-type semiconductor layer 1b formed on an n-type semiconductor layer 1a. The vertical register unit 2 is formed and arranged in a line on 1b. The vertical register section 2 is composed of two impurity diffusion layers 2a and 2b. The impurity diffusion layer 2a formed on the n-type semiconductor layer 1a side is p-type, and the impurity diffusion layer 2b formed on the surface side of the Si substrate 1 is It is an n-type.

Further, in the p-type semiconductor layer 1b, sensor portions 3 are formed and arranged in an island shape at positions other than the vertical register portion 2 along the line direction of the vertical register portion 2 on the side portions thereof. The sensor unit 3 also includes two impurity diffusion layers 3a and 3b, and the impurity diffusion layer 3a formed on the n-type semiconductor layer 1a side.
Is an n-type, and the impurity diffusion layer 3b formed on the surface side of the Si substrate 1 is a p-type.

An insulating film 4 made of, for example, silicon oxide (SiO ₂ ) is formed on the surface of such a Si substrate 1. On the insulating film 4 and above the vertical register portion 2, polysilicon ( A transfer electrode 5 made of Poly-Si) is formed. The insulating film 4 has a film thickness of 30 nm to 10 nm.
The transfer electrode 5 has a film thickness of 300 nm to 8 nm.
It is about 00 nm.

The surface of the transfer electrode 5 is, for example, 200n.
and covered with an insulating film 6 made of SiO ₂ of about M～500nm, insulating film 6 surface, for example, aluminum (Al)
It is covered with a light shielding film 20 made of. This light-shielding film 20
Is a transfer electrode 5 which is usually formed with a flat upper surface.
Is formed so as to cover only the insulating film 6 having a substantially uniform film thickness, the light shielding film 20 is flat on the upper surface side of the transfer electrode 5.

Further, a flattening film 9 made of an insulating material having a flat surface is formed on the Si substrate 1, that is, on the insulating film 4 in a state of covering the light shielding film 20. Examples of the insulating material used for the flattening film 9 include an acrylic thermosetting resin, for example, a mixture of PGMA (polyglycidyl methacrylate) and trimethic anhydride. Then, on the flattening film 9 and above the vertical register portion 2,
For example, a light-shielding dyeing layer 21 formed by dyeing a natural polymer such as casein in black is patterned. Further, an on-chip microlens 11 is provided on the flattening film 9 so as to cover the light-shielding dyeing layer 21 to form a CCD solid-state image sensor.

When the CCD solid-state image pickup device as described above is manufactured, the p-type semiconductor layer 1 is previously formed on the n-type semiconductor layer 1a.
An insulating film 4 is formed on the surface of the Si substrate 1 formed with b by, for example, a thermal oxidation method, and then a resist pattern is formed on the insulating film 4 by a lithography technique. Subsequently, p-type impurities and n-type impurities are sequentially implanted by ion implantation using this resist pattern as a mask to form the vertical register portion 2, and then the resist pattern is removed.

Next, a poly-Si film is formed on the insulating film 4 by, for example, the CVD method, and then this film is patterned by lithography and etching to transfer the transfer electrode 5.
To form. Next, after forming the insulating film 6 on the surface of the transfer electrode 5 by the thermal oxidation method, the entire surface except the position where the sensor section 3 is to be formed is covered with a resist. Then, using this resist pattern as a mask, n-type impurities and p-type impurities are sequentially ion-implanted into the Si substrate 1 to form the sensor portion 3, and then the resist pattern is removed.

Then, for example, by a sputtering method,
An Al film is formed on the Si substrate 1 in a state of covering the transfer electrode 5, and then the Al film is patterned by lithography and etching to form a light shielding film 20 covering the transfer electrode 5. Next, a film made of, for example, an acrylic thermosetting resin is formed on the Si substrate 1 so as to cover the light shielding film 20, and then the surface of this film is flattened to form a flattening film 9.

Then, in the same manner as the conventional method shown in FIG.
A layer to be dyed, which is made of a mixture of casein and a cross-linking agent, is formed on the flattening film 9, and is exposed and developed as shown in FIG. 2 to obtain a pattern 21a. Then, the pattern 21a
Is dyed to form the light-shielding dye layer 21. Further, an on-chip microlens 11 is provided on the flattening film 9, and the above-mentioned C
Obtain a CD solid-state image sensor.

In the CCD solid-state image pickup device manufactured as described above, the light shielding film 20 is formed flat on the upper surface side of the transfer electrode 5 as described above. Therefore, in the process of forming the light-shielding dyed layer 21, when the layer to be dyed is exposed,
As shown in FIG. 5, even if the exposure light (hereinafter, referred to as exposure light) 61 is incident on the upper surface of the light shielding film 20, the exposure light 61 is reflected as it is in the incident direction. Note that, in FIG. 2, the broken line arrow indicates the light reflected by the light shielding film 20. As a result, only the desired portion of the dyed layer is exposed and cured. Therefore, after development, the desired light-shielding dyed layer 2 having no trailing portion unlike the conventional one is used.
1 pattern 21a is formed.

Therefore, in the CCD solid-state image pickup device of this embodiment, since the light-shielding dyeing layer 21 is formed in a desired shape, it is possible to prevent the incident light generated when the CCD solid-state image pickup device is conventionally operated. As a result, the unevenness is prevented, and the sensitivity becomes uniform. Further, since it has the light-shielding film 20 and the light-shielding dyeing layer 21, it is possible to prevent the incident light from leaking into the vertical register portion 2, so that the device has good image characteristics.

Further, even if the light exposure amount of the layer to be dyed in the process of forming the light-shielding dyeing layer 21 is increased from the optimum value, the light-shielding dyeing layer 21 having a desired shape can be obtained for the above reason, so that the margin for the light exposure amount should be increased. You can Therefore, the CCD solid-state imaging device of this embodiment can be stably manufactured. The method for manufacturing the CCD solid-state image sensor described above is an example, and the present invention is not limited to the above method.

Next, a second embodiment of the present invention will be described with reference to the side sectional view of the main part shown in FIG. This embodiment corresponds to the first
The structure of the film covering the transfer electrode 5 is different from that of the example. That is, in this CCD solid-state imaging device, the transfer electrode 5 is formed on the Si substrate 1 and above the vertical register portion 2 with the insulating film 4 interposed therebetween, as in the above-described embodiment, and the surface of the transfer electrode 5 is It is covered with an insulating film 6.

A first light-shielding film 30 made of, for example, Al is formed on the transfer electrode 5 and at a part of the position directly above the vertical register section 2 with the insulating film 6 interposed therebetween. A second light-shielding film 31 made of, for example, Al is formed so as to cover the first light-shielding film 30. This first light-shielding film 30
Has a film thickness of, for example, about 500 nm to 1 μm.
The film thickness of the light shielding film 31 is, for example, about 200 nm to 600 nm. Further, the second light-shielding film 31 has a film thickness of 20 nm to 1
It is covered with an antireflection film 32 made of a titanium oxynitride (TiON) film having a thickness of about 00 nm. That is, in the transfer electrode 5, a part of the position immediately above the vertical register portion 2 is covered with three films of the first light shielding film 30, the second light shielding film 31, and the antireflection film 32,
The other portions are the second light-shielding film 31 and the antireflection film 32.
It is covered with a film.

A flattening film 9 is formed on the insulating film 4 so as to cover the antireflection film 32, and a light-shielding dyeing layer 21 is formed on the flattening film 9 as in the first embodiment. In addition, the on-chip microlens 11 is provided.

In the case of manufacturing the above CCD solid-state image pickup device, after forming the sensor portion 3 as in the manufacturing method of the first embodiment, the transfer electrode 5 is covered on the Si substrate 1 by, for example, a sputtering method. An Al film is formed on. Next, the Al film is patterned by lithography and etching to form the first light shielding film 30. Subsequently, an Al film and a TiON film are sequentially formed on the Si substrate 1 in a state of covering the transfer electrode 5 and the first light shielding film 30 by, for example, a sputtering method, and then the Al film and the TiON film are formed by lithography and etching. Is patterned to form a second light-shielding film 31 and an antireflection film 32.

Then, the flattening film 9 and the light-shielding dyeing layer 10 are formed in the same manner as in the first embodiment, and the on-chip microlens 11 is further provided to obtain the CCD solid-state image pickup device.

In the CCD solid-state image sensor manufactured as described above, since the second light-shielding film 31 is covered with the antireflection film 32, the exposure light 61 is emitted in the process of forming the light-shielding dyeing layer 21 as shown in FIG. Even if the exposure light 61 is incident on the antireflection film 32, the reflection of the exposure light 61 is suppressed. So even if the first
The etching for forming the light-shielding film 30 forms a taper portion on the upper surface of the first light-shielding film 30, which prevents the exposure light 61 from being reflected even if the anti-reflection film 32 has a taper portion. Then, only the desired portion of the dyed layer is exposed, so that the dyed layer has the desired pattern 2
1a is formed. Therefore, the solid-state image sensor of this embodiment also has the same advantages as those of the first embodiment.

The antireflection film according to the present invention may be any one as long as it can suppress the reflection of light on the surface thereof.
Besides the N film, for example, a tungsten (W) film or the like can be used. Further, in this embodiment, the case where the second light shielding film 31 is covered with the antireflection film 32 has been described, but at least the upper surface side of the transfer electrode 5 of the second light shielding film 31 may be covered with the antireflection film. .

Next, a third embodiment of the present invention will be described with reference to a sectional side view of a main part shown in FIG. This embodiment is different from the second embodiment in that the first light shielding film 40 is formed in a predetermined shape and the second light shielding film 41 is not covered with the antireflection film.

That is, in this CCD solid-state image pickup device, the first light-shielding film 40 is formed on the transfer electrode 5 and directly above the vertical register portion 2 with the insulating film 6 interposed therebetween, as in the above embodiment. The side surface 40b is formed substantially perpendicular to the surface of the Si substrate 1. That is, the surface of the first light-shielding film 40 has a flat upper surface 40 a and the side surface 4 described above.
0b and 0b. The second light shielding film 41 is formed so as to cover the first light shielding film 40 and the transfer electrode 5 as described above. As in the first embodiment, the flattening film 9 and the light-shielding dyeing layer 21 are formed on the insulating film 4 in a state of covering the second light-shielding film 41, and the on-chip microlens 11 is provided. There is.

In the case of manufacturing the above CCD solid-state image pickup device, after the Al film for forming the first light-shielding film 40 is formed in the same manner as in the manufacturing method of the second embodiment, lithography and anisotropy are performed. Etching, for example, RIE under the following conditions
The Al film is patterned by and the side surface 40b is S
A first light shielding film 40 that is substantially vertical to the surface of the i substrate 1 is formed. Etching conditions; Etching gas: BCl ₃ , Cl ₂ Etching gas flow rate: BCl ₃ / Cl ₂ = 200/40 sccm Atmospheric pressure: 0.1 Torr Radio frequency (RF) power: 500 W

Next, the second light-shielding film 3 in the second embodiment.
The second light-shielding film 41 is formed by the same method as in No. 1, and the flattening film 9, the light-shielding dyeing layer 10 and the on-chip microlens 11 are further provided by performing the same steps as those in the first embodiment.

In the CCD solid-state image sensor manufactured as described above, the side surface 40b of the first light-shielding film 40 is formed substantially perpendicular to the surface of the Si substrate 1, and the second light-shielding film 41 is formed.
Is formed substantially along the surface shape of the first light-shielding film 40, the upper surface side of the transfer electrode 5 in the second light-shielding film 41 is a vertical portion that covers the side surface 40b of the first light-shielding film 40, and other portions. It has no tapered portion, that is, a flat upper surface portion. In the process of forming the light-shielding dyeing layer 21, the exposure light 61 is incident on the surface of the Si substrate 1 almost perpendicularly, so that the exposure light 61 is emitted from the second light-shielding film 41.
Of the exposure light 61, and therefore the reflection of the exposure light 61 obliquely upward by the second light-shielding film 41 is prevented as shown in FIG. Note that, in FIG. 6, the broken line arrow indicates the light reflected by the second light shielding film 41.

As a result, only the desired portion of the dyed layer is exposed, and the pattern 21 of the light-shielding dyed layer 21 having the desired shape is obtained.
Since a is obtained, the CCD solid-state image sensor of this embodiment also has the same advantages as those of the first embodiment.

Next, a fourth embodiment of the present invention will be described with reference to a sectional side view of a main part shown in FIG. This embodiment is different from the third embodiment in that the first light shielding film 50 has a flat upper surface portion 50a, and the width w of the upper surface portion 50a is substantially the same as the width t of the light shielding dyeing layer 21. It is wider than that.

That is, in this CCD solid-state image pickup device, the upper surface of the first light-shielding film 50 has a flat upper surface 50a.
And a tapered portion 50b extending from the peripheral edge of the upper surface portion 50a. Further, in this embodiment, the width w of the upper surface portion 50a is formed slightly wider than the width t of the light shielding dyeing layer 21, and the first light shielding film 50 has the upper surface portion 50a.
Are arranged immediately below the light-shielding dyeing layer 21. The width w of the upper surface portion 50a is, for example, about 4 μm, and the width t of the light-shielding dyeing layer 21 is, for example, about 3 μm. In addition, the second light shielding film 51 is the first light shielding film 50.
And the transfer electrode 5 are covered.

Then, as in the first embodiment, the second light-shielding film 5 is formed.
A flattening film 9 and a light-shielding dyeing layer 21 are formed on the insulating film 4 in a state of covering 1 and an on-chip microlens 11 is provided.

In the above CCD solid-state image sensor, the width w of the upper surface portion 50a of the first light shielding film 50 is wider than the width t of the light shielding dyeing layer 21 in the etching for forming the first light shielding film 50, and the upper surface It is manufactured in the same manner as the manufacturing method of the second embodiment except that the etching is performed so that the portion 50a is located immediately below the light-shielding dyeing layer 21. At this time, the etching for forming the first light shielding film 50 is performed by the first light shielding film 5
If 0 is formed in the above-mentioned shape, it is not limited to anisotropic etching, but may be isotropic etching such as wet etching.

In such a CCD solid-state image pickup device, the first
The width w of the upper surface portion 50a of the light shielding film 50 is formed wider than the width t of the light shielding dyeing layer 21, and the upper surface portion 50a is located directly below the light shielding dyeing layer 21. Therefore, the second light shielding film 51 formed along the surface shape of the first light shielding film 50 is
The upper surface side of the transfer electrode 21 has a width wider than the width t of the light-shielding dyeing layer 21 and is located immediately below the light-shielding dyeing layer 21, and a taper portion extending from the peripheral edge of the upper surface portion. Will be done.

Therefore, in the process of forming the light-shielding dyeing layer 21, even if the exposure light 61 is incident on the second light-shielding film 51 as shown in FIG. 8, the exposure light 61 is reflected by the upper surface portion, It is reflected as it is in the incident direction. In addition,
In FIG. 8, the dashed arrow indicates the light reflected by the second light shielding film 51. Therefore, since the reflection of the exposure light 61 obliquely upward to the light shielding film as in the conventional case is prevented and the pattern 21a of the light shielding dyeing layer 21 having a desired shape is obtained, the CCD solid-state imaging device of this embodiment is also the first embodiment. It will have the same advantages as the example.

[0048]

As described above, according to the solid-state image pickup device of the first aspect of the invention, since the light-shielding film is formed flat on the upper surface side of the transfer electrode, the light-shielding dyeing layer formation process Since the exposure light is not reflected obliquely upward by the light shielding film, only the desired portion of the dyed layer can be exposed. Therefore, the solid-state image pickup device of the present invention has a light-shielding dyeing layer having a desired shape.

According to the solid-state image pickup device of the second aspect, the second light-shielding film is covered with the antireflection film.
In the process of forming the light-shielding dyed layer, even when the exposure light enters the antireflection film during the exposure of the dyed layer, the reflection of the light is suppressed, so that the dyed layer can be exposed only at a desired portion. Therefore, the solid-state imaging device of the present invention also has the light-shielding dyeing layer formed in a desired shape.

In the solid-state image sensor according to the third aspect of the present invention, the side surface of the first light-shielding film is formed substantially perpendicular to the surface of the substrate, and the second light-shielding film extends along the surface shape of the first light-shielding film. Since it is formed, even if the exposure light enters the second light-shielding film in the process of forming the light-shielding dyeing layer, the exposure light is reflected as it is in the incident direction. Therefore, since the exposure light is prevented from being reflected obliquely upward and only the desired portion of the dyed layer can be exposed, the solid-state imaging device of the present invention also has a light-shielding dyed layer of a desired shape.

According to a fourth aspect of the invention, in the solid-state imaging device, the width of the upper surface of the first light shielding film is formed to be substantially equal to or wider than the width of the light shielding dyeing layer, and the upper surface of the light shielding dyeing layer is formed. Since the second light-shielding film is formed immediately below the first light-shielding film, the second light-shielding film is formed along the surface shape of the first light-shielding film. The exposure light is reflected by the upper surface portion to prevent the exposure light from being reflected obliquely upward. Therefore, the solid-state image pickup device of the present invention also has a light-shielding dyeing layer having a desired shape. Therefore, the above-described solid-state image pickup device of the present invention prevents the incident light from being eclipsed during the operation of the solid-state image pickup device and has no unevenness in sensitivity, so that the device has good image characteristics.

[Brief description of drawings]

FIG. 1 is a side sectional view of a main part showing a first embodiment of a solid-state image sensor according to the present invention.

FIG. 2 is a plan view of the solid-state image sensor shown in FIG.
It is a schematic diagram which shows the influence which exposure light receives from a base layer.

FIG. 3 is a side sectional view of a main part showing a second embodiment of the solid-state imaging device of the present invention.

FIG. 4 is a schematic diagram showing the influence of an underlayer on the exposure light during the manufacture of the solid-state imaging device shown in FIG.

FIG. 5 is a side sectional view of a main part showing a third embodiment of the solid-state imaging device of the present invention.

6A and 6B are schematic views showing the influence of an underlying layer of exposure light upon manufacturing the solid-state imaging device shown in FIG.

FIG. 7 is a side sectional view of a main part showing a fourth embodiment of the solid-state imaging device of the present invention.

8 is a schematic diagram showing the influence of an underlayer on the exposure light during the manufacture of the solid-state imaging device shown in FIG.

FIG. 9 is a side sectional view of a main part of a conventional solid-state imaging device.

FIG. 10 is an explanatory diagram showing a process of forming a light-shielding dyeing layer in the order of steps.

FIG. 11 is a schematic diagram showing the influence of the underlying layer of exposure light upon manufacturing a conventional solid-state imaging device.

FIG. 12 is a schematic diagram showing how incident light is eclipsed by a trailing portion.

[Explanation of symbols]

 1 Si substrate (base) 2 Vertical register part 3 Sensor part 4, 6 Insulating film 5 Transfer electrode 9 Flattening film 20 Light-shielding film 21 Light-shielding dyeing layer 30, 40, 50 First light-shielding film 31, 42, 51 Second light-shielding film 32 Antireflection Film 40b Side 50a Top Surface

Claims (4)

[Claims] 1. A vertical register section made of an impurity diffusion layer formed on a base body, a sensor section made of an impurity diffusion layer formed at a position other than the vertical register section of the base body, and on the base body and the vertical direction. A transfer electrode which is formed above the register part via an insulating film and whose surface is covered with an insulating film, a light shielding film which covers the transfer electrode, and a flat surface which is formed on the substrate while covering the light shielding film. A solidification film, and a light-shielding dyeing layer formed on the flattening film and above the vertical register portion, wherein the light-shielding film is formed flat on the upper surface side of the transfer electrode. Image sensor. 2. A vertical register portion formed of an impurity diffusion layer formed on a base body, a sensor portion formed of an impurity diffusion layer formed at a position other than the vertical register portion of the base body, and on the base body and the vertical direction. A transfer electrode which is formed above the register part via an insulating film and whose surface is covered with an insulating film, a light shielding film which covers the transfer electrode, and a flat surface which is formed on the substrate while covering the light shielding film. A light-shielding film and a light-shielding dyeing layer formed on the flattening film and above the vertical register portion, wherein the light-shielding film has at least the transfer electrode upper surface side covered with an antireflection film. Solid-state image sensor. 3. A vertical register section made of an impurity diffusion layer formed on a base body, a sensor section made of an impurity diffusion layer formed at a position other than the vertical register section of the base body, and on the base body and the vertical direction. A transfer electrode which is formed above the register portion via an insulating film and whose surface is covered with an insulating film, a first light-shielding film formed on the transfer electrode, the transfer electrode and the first light-shielding film. A second light-shielding film that covers the second light-shielding film, a flattening film formed on the base in a state of covering the second light-shielding film, and a light-shielding dyeing layer formed on the flattening film and above the vertical register portion. The solid-state imaging device, wherein the first light-shielding film has a side surface formed substantially perpendicular to the surface of the base body. 4. A vertical register section made of an impurity diffusion layer formed on a base body, a sensor section made of an impurity diffusion layer formed at a position other than the vertical register section of the base body, and on the base body and the vertical direction. A transfer electrode which is formed above the register portion via an insulating film and whose surface is covered with an insulating film, a first light-shielding film formed on the transfer electrode, the transfer electrode and the first light-shielding film. A second light-shielding film that covers the second light-shielding film, a flattening film formed on the base in a state of covering the second light-shielding film, and a light-shielding dyeing layer formed on the flattening film and above the vertical register portion. The first light-shielding film has a flat upper surface portion, and the width of the upper surface portion is formed to be substantially the same as the width of the light-shielding dyeing layer or wider than the width of the light-shielding dyeing layer. Part is located directly under the light-shielding dyeing layer A solid-state imaging device characterized and.