JPH0828790B2 - Reader - Google Patents

Reader

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Publication number
JPH0828790B2
JPH0828790B2 JP62020781A JP2078187A JPH0828790B2 JP H0828790 B2 JPH0828790 B2 JP H0828790B2 JP 62020781 A JP62020781 A JP 62020781A JP 2078187 A JP2078187 A JP 2078187A JP H0828790 B2 JPH0828790 B2 JP H0828790B2
Authority
JP
Japan
Prior art keywords
photoelectric conversion
light
conversion element
array
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62020781A
Other languages
Japanese (ja)
Other versions
JPS63187964A (en
Inventor
啓徳 森田
泰夫 西口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP62020781A priority Critical patent/JPH0828790B2/en
Publication of JPS63187964A publication Critical patent/JPS63187964A/en
Publication of JPH0828790B2 publication Critical patent/JPH0828790B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、例えばファクシミリ装置の小型化を目指し
たもので実質上被検知体と寸法的に1:1に対応させた光
電変換素子アレイを配置して成る密着型イメージセンサ
などの読取り装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention is directed to, for example, miniaturization of a facsimile apparatus, and a photoelectric conversion element array substantially corresponding to a detected object in a dimension of 1: 1 is provided. The present invention relates to a reading device such as a contact image sensor that is arranged.

〔従来技術及びその問題点〕[Prior art and its problems]

近時、密着型イメージセンサの開発が活発化してお
り、第3図はそのセンサの一例であり、原稿1と寸法的
に実質上1:1に対応させた光検知部2が原稿1に密着
し、発光ダイオード3が原稿1を投光し、その反射光を
光検知部2で受光する。尚、図中矢印A及びBはそれぞ
れ主走査方向及び副走査方向を表す。
Recently, the development of a contact image sensor has been activated, and FIG. 3 shows an example of the sensor. The light detection unit 2 which is substantially 1: 1 in size with the document 1 is closely attached to the document 1. Then, the light emitting diode 3 projects the original 1 and the reflected light is received by the photodetector 2. In the figure, arrows A and B indicate the main scanning direction and the sub scanning direction, respectively.

第4図はこの光検知部2の副走査方向の断面図であ
り、本願出願人が既に提案した読取り装置である。
FIG. 4 is a sectional view of the photodetector 2 in the sub-scanning direction, which is a reader already proposed by the applicant of the present application.

即ち、ガラス製の透光性基板4が金属フレームで構成
された基板支持体5に付設されており、この基板4上に
はCRが蒸着して成る共通電極6が形成され、この共通電
極6の上にはアモルファスシリコンから成る光電変換部
7が形成されており、そして、この光電変換部7の上に
はITOから成る透明電極8が個々の光電変換部7に対応
して形成される。更にこの透明電極8の一部を覆うよう
にCrを蒸着させ、次いでフォトエッチングを行い、これ
によってCrから成る引出し電極9を各素子に対して個別
的に接続し、然る後、共通電極6、光電変換部7及び透
明電極8に共通した光通過孔10をフォトエッチングによ
って個別的に形成する。そして、最上部にはシリコンオ
キサイド、シリコンナイトライド又はシリコンオキシナ
イトライドなどから成る透明な保護層11が形成される。
また、基板支持体5には主走査方向に亘って長尺状の凹
部12が形成されており、この凹部12の底部には複数のLE
Dチップ13が所定の間隔をとって配列されている。
That is, a transparent substrate 4 made of glass is attached to a substrate support 5 composed of a metal frame, and a common electrode 6 formed by vapor deposition of CR is formed on the substrate 4 and the common electrode 6 is formed. A photoelectric conversion section 7 made of amorphous silicon is formed on the photoelectric conversion section 7, and a transparent electrode 8 made of ITO is formed on the photoelectric conversion section 7 corresponding to each photoelectric conversion section 7. Further, Cr is vapor-deposited so as to cover a part of the transparent electrode 8, and then photoetching is performed, whereby the lead electrode 9 made of Cr is individually connected to each element, and then the common electrode 6 is formed. The light passage hole 10 common to the photoelectric conversion portion 7 and the transparent electrode 8 is individually formed by photoetching. Then, a transparent protective layer 11 made of silicon oxide, silicon nitride, silicon oxynitride, or the like is formed on the uppermost portion.
In addition, a long recess 12 is formed in the substrate support 5 in the main scanning direction, and a plurality of LEs are provided at the bottom of the recess 12.
D chips 13 are arranged at a predetermined interval.

上記の如き構成の読取り装置によれば、LEDチップ13
が基板4、光通過孔10及び保護層11を介して原稿1を投
光し、その反射光が光通過孔10近傍の透明電極8を通過
して光電変換部7に受光される。
According to the reading device configured as described above, the LED chip 13
The document 1 is projected through the substrate 4, the light passage hole 10 and the protective layer 11, and the reflected light passes through the transparent electrode 8 near the light passage hole 10 and is received by the photoelectric conversion unit 7.

第5図は第4図を矢印C方向から見た光電変換部素子
アレイであり、この光電変換素子アレイ14には光通過孔
10のアレイが表されており、更に各々の素子には引出し
電極9が個別的に接続され、その電極9はリード15とし
て基板上に配線パターン化されている。そして、上記の
受光システムは各素子共通であって各々の素子が受光さ
れるのに伴って素子毎に個別読取り信号が一次元的に順
次リード15を介して導出される。
FIG. 5 shows a photoelectric conversion element array as viewed in the direction of arrow C in FIG. 4, and this photoelectric conversion element array 14 has a light passage hole.
An array of 10 is shown. Furthermore, a lead electrode 9 is individually connected to each element, and the electrode 9 is patterned as a lead 15 on the substrate. The above-described light receiving system is common to each element, and as each element receives light, an individual read signal is sequentially derived one-dimensionally through the lead 15 for each element.

このような構成の読取り装置によれば、各々の素子の
受光量はLEDチップ13のアレイより投光されて個々の光
通過孔10を通過する光量によって依存するものであり、
その通過光量はLEDチップ13のアレイの照度分布によっ
て決められるのでアレイ状の光通過孔10に対して均等な
照度分布となるようにLEDチップアレイが設定されてい
る。その上、読取り装置を駆動させた場合、各々の素子
にはその素子と隣接する素子に位置する光通過孔を通し
て入射した光のうち原稿1による反射光も一部投光され
ており、それが各々の素子に亘って同じ条件で投光され
ており、これにより、同じ色調の被検知体に対しては各
々の素子が同一受光量となる。
According to the reader having such a configuration, the amount of light received by each element depends on the amount of light projected from the array of LED chips 13 and passing through the individual light passage holes 10.
Since the amount of light passing therethrough is determined by the illuminance distribution of the array of LED chips 13, the LED chip array is set so that the illuminance distribution is uniform with respect to the array of light passing holes 10. Moreover, when the reading device is driven, a part of the light reflected by the original 1 among the light incident through the light passage hole located in the element adjacent to the element is also projected to each element. Light is projected under the same conditions over the respective elements, so that the respective elements receive the same amount of light received with respect to the object to be detected having the same color tone.

しかし乍ら、上記光電変換素子アレイ14の両端の素子
14aは、それに隣接する素子がそれぞれ片側で欠けてお
り、これにより、その素子14aで受光する量が他の素子
に比べて少なくなり、その結果、その素子の読取り信号
が小さくなるという問題がある。
However, the elements at both ends of the photoelectric conversion element array 14 are
14a has a problem that the element adjacent to it is chipped on one side, so that the amount of light received by the element 14a is smaller than that of other elements, and as a result, the read signal of the element becomes small. .

また、上述した両端の素子14aに接続したリード15a
は、他のリードに比べてその片側に同じリードが配線さ
れておらず、これによってそのリードより表面リークが
生じて暗状態で導出される信号のレベルが他の素子に比
べて異なるという問題がある。
Also, the leads 15a connected to the elements 14a at both ends described above.
Has the problem that the same lead is not wired on one side as compared with other leads, which causes surface leakage from the lead and the level of the signal derived in the dark state differs from that of other elements. is there.

即ち、この問題を第4図中矢印D方向より見た第6図
によって説明するならば、両端の素子14aを除く他の素
子においては暗状態(素子に全く光が照射されない状
態)でも個別電極と共通電極の間には非常に小さな電流
(これは暗電流と呼ばれており、通常1pA以下である)
が流れており、これに対して両端の素子14aにおいては
矢印Sで示すようにアモルファスシリコン光電変換部7
の表面で電流が流れ易くなっており、この電流は数pA〜
数十pA位であって上記暗電流に比べて著しく大きい。そ
のために両端の素子の暗状態で導出される信号のレベル
がその他の素子から導出される信号のレベルと比べて異
なり、正確な読取り信号が得られないという問題が生じ
る。
That is, if this problem is explained with reference to FIG. 6 viewed from the direction of arrow D in FIG. 4, in the other elements except the elements 14a at both ends, the individual electrodes are in the dark state (the state where no light is irradiated to the elements). A very small current between the and common electrode (this is called dark current, usually less than 1pA)
In contrast, in the elements 14a at both ends, as shown by the arrow S, the amorphous silicon photoelectric conversion portion 7
It is easy for the current to flow on the surface of the
It is about several tens of pA, which is significantly higher than the dark current. Therefore, the level of the signal derived in the dark state of the elements at both ends is different from the level of the signal derived from the other elements, which causes a problem that an accurate read signal cannot be obtained.

〔発明の目的〕[Object of the Invention]

従って本発明は叙上に鑑みて完成されたものであり、
その目的は光電変換素子アレイの両端に位置する素子の
受光量を他の素子と同程度とし、これによって各素子の
すべてに亘って同一読取り条件のもとで同レベルの読取
り信号が得られるようにした読取り装置を提供すること
にある。本発明の他の目的は暗状態で導出される信号の
レベルをすべての素子に亘って同じにした読取り装置を
提供することにある。
Therefore, the present invention has been completed in view of the above,
The purpose is to make the amount of light received by the elements located at both ends of the photoelectric conversion element array about the same as other elements, so that read signals of the same level can be obtained under the same reading conditions over all of the elements. The purpose of the present invention is to provide a reading device. Another object of the present invention is to provide a reader in which the level of the signal derived in the dark state is the same across all elements.

〔問題点を解決するための手段〕[Means for solving problems]

本発明によれば、基板上に光電変換素子アレイを形成
し、該素子アレイと対応する部位に光源を備え、この光
源が被検知体を投光し、その反射光を光電変換素子アレ
イが受光し、この素子アレイから順次時系列に読取り信
号が得られるようにした読取り装置において、前記光電
変換素子アレイの端部の光電変換素子に隣接してダミー
用素子を形成したことを特徴とする読取り装置が提供さ
れる。
According to the present invention, a photoelectric conversion element array is formed on a substrate, a light source is provided in a portion corresponding to the element array, the light source projects a detection object, and the reflected light is received by the photoelectric conversion element array. Then, in the reading device capable of sequentially obtaining the read signals from this element array in time series, a reading element characterized in that a dummy element is formed adjacent to the photoelectric conversion element at the end of the photoelectric conversion element array. A device is provided.

以下、本発明を詳細に説明する。 Hereinafter, the present invention will be described in detail.

第1図にて示す実施例によれば、例えば第4図に示し
た読取り装置の光電変換素子アレイにおいて、各素子14
のうち端部の素子14aに隣接してダミー用素子16を形成
することを特徴とするものであり、このダミー用素子16
は他の素子と同じような光通過孔が形成されていること
が重要である。これによってダミー用素子16にある光通
過孔を通して原稿1を投光し、その反射光の一部が端部
の素子14aを投光し、その結果、端部の素子14aを含めた
すべての光電変換素子が同じ色調の被検知体に対して同
一受光量と成り得る。
According to the embodiment shown in FIG. 1, each element 14 in the photoelectric conversion element array of the reader shown in FIG.
The dummy element 16 is formed adjacent to the element 14a at the end of the dummy element 16a.
It is important that the same light passage hole as other elements is formed. As a result, the document 1 is projected through the light passage hole in the dummy element 16, and a part of the reflected light projects the element 14a at the end portion, and as a result, all the photoelectric elements including the element 14a at the end portion are projected. The conversion elements may have the same amount of received light with respect to the detected object having the same color tone.

また本発明によれば、前記光源としてのLEDチップ13
が消灯している場合である暗状態においてダミー用素子
16を読取り用素子14と実質上同電位となるように設定す
るのがよく、そのためには例えば両者の素子14,16の各
電極、即ち素子14のリード15とダミー用素子16のリード
とを接地すればよく、これにより、暗状態において両端
の素子14aに接続されたリード15a近傍のアモルファスシ
リコン光電変換部7表面で生じる電流の表面リーク(第
6図中矢印S)がなくなり、その結果、両端の素子14a
の暗状態で導出される信号のレベルがその他の素子から
導出される信号のレベルと同程度になる。尚、上記暗状
態と対比される明状態とは、LEDチップ13が点灯して、
その照射光が原稿1によって反射され、更にこの反射光
が読取り用素子14によって受光される場合である。
Further, according to the present invention, the LED chip 13 as the light source is
Dummy element in the dark state when is off
It is preferable to set 16 so that it has substantially the same potential as the reading element 14, and for that purpose, for example, each electrode of both elements 14 and 16, that is, the lead 15 of the element 14 and the lead of the dummy element 16 are provided. It suffices to ground it, which eliminates the surface leak of current (arrow S in FIG. 6) that occurs on the surface of the amorphous silicon photoelectric conversion portion 7 near the leads 15a connected to the elements 14a at both ends in the dark state. Element 14a on both ends
The level of the signal derived in the dark state is approximately the same as the level of the signal derived from other elements. The bright state, which is compared with the dark state, means that the LED chip 13 is lit,
This is a case where the irradiation light is reflected by the original 1 and the reflected light is received by the reading element 14.

更に本発明によれば、ダミー用素子16を形成するにあ
たって、その光通過孔の光通過面積を読取り用素子14の
ものに比べて大きくなるように設定するとよい。
Further, according to the present invention, when forming the dummy element 16, it is preferable to set the light passage area of the light passage hole to be larger than that of the reading element 14.

即ち、その理由を詳述するならば、明状態(受光状
態)においては、その受光によって読取り用素子の電位
が変化するが、これに対してダミー用素子16が接地され
ている場合にはその素子16の電位が変化せず、これによ
り、端部の素子14aとダミー用素子16の間で電位差が生
じ、読取り用素子の電位変化分に相当してそれが小さく
なる方向に電流リークが生じ、その結果、端部の素子14
aの読取り信号が若干小さくなる。この問題に対して、
ダミー用素子の光通過孔の面積を光電変換素子アレイ14
の光通過孔の面積よりも大きくして端部の素子14aの受
光量を多くすれば、端部の素子の読取り信号の減少分を
補完することができる。
That is, to explain the reason in detail, in the bright state (light receiving state), the light receiving changes the potential of the reading element, whereas when the dummy element 16 is grounded, The potential of the element 16 does not change, which causes a potential difference between the element 14a at the end and the dummy element 16 and causes a current leak in a direction corresponding to the change in potential of the reading element and reducing the potential. , As a result, the end element 14
The read signal of a becomes slightly smaller. For this problem,
The area of the light passage hole of the dummy element is defined by the photoelectric conversion element array 14
If the light receiving amount of the element 14a at the end portion is increased by making the area larger than the area of the light passage hole, the decrease in the read signal of the element at the end portion can be complemented.

また本発明の他の実施例として、第2図に示すように
素子アレイの両端にそれぞれ複数個形成してもよく、こ
れによって端部の素子14aの暗状態及び明状態のそれぞ
れの条件がその他の読取り用素子の条件と更に一層同一
化するという点で望ましい。
As another embodiment of the present invention, a plurality of elements may be formed at both ends of the element array as shown in FIG. 2, so that the dark state and the bright state of the element 14a at the end may be different. This is desirable in that the conditions of the reading element of (1) are further made the same.

〔発明の効果〕 以上の通り、本発明の読取り装置によれば、すべての
光電変換素子が均等な受光条件となり、更に暗状態及び
明状態のいずれにおいても同一条件のもとで同等の出力
信号を得ることができ、これにより、正確且つ高信頼性
の読取り装置が提供できる。
[Advantages of the Invention] As described above, according to the reading device of the present invention, all photoelectric conversion elements have equal light receiving conditions, and even in both the dark state and the bright state, the same output signal is obtained under the same conditions. Therefore, an accurate and highly reliable reading device can be provided.

尚、本発明の読取り装置は上記実施例に限定されるも
のではなく、本発明の要旨を逸脱しない範囲において種
々の変更、改良等は何等差支えない。
The reading device of the present invention is not limited to the above-mentioned embodiment, and various modifications and improvements can be made without departing from the scope of the present invention.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明に係る読取り装置の光電変換素子アレイ
及びそれの信号導出リードパターンを示す説明図、第2
図は本発明に係る読取り装置の他の例を示す光電変換素
子アレイ及びそれの信号導出リードパターンの説明図、
第3図は本発明に係る読取り装置の被検知体との配置を
示す概略図、第4図は読取り装置の副走査方向の断面
図、第5図は従来の読取り装置における光電変換素子ア
レイ及びそれの信号導出リードパターンを示す説明図、
第6図は読取り装置の主走査方向の断面図である。 1……原稿、2……光検知部 3……発光ダイオード、4……基板 6……共通電極、7……光電変換部 8……透明電極、9……引出し電極 10……光通過孔、14……光電変換素子アレイ 15……リード、16……ダミー用素子
FIG. 1 is an explanatory view showing a photoelectric conversion element array of a reading device according to the present invention and a signal derivation lead pattern thereof, FIG.
The figure is an explanatory view of a photoelectric conversion element array and its signal derivation lead pattern showing another example of the reading device according to the present invention,
FIG. 3 is a schematic view showing the arrangement of the reading device according to the present invention with the object to be detected, FIG. 4 is a sectional view of the reading device in the sub-scanning direction, and FIG. 5 is a photoelectric conversion element array in a conventional reading device. Explanatory diagram showing a signal derivation lead pattern thereof,
FIG. 6 is a sectional view of the reading device in the main scanning direction. 1 ... Original, 2 ... Photodetector 3 ... Light emitting diode, 4 ... Substrate 6 ... Common electrode, 7 ... Photoelectric conversion unit 8 ... Transparent electrode, 9 ... Extraction electrode 10 ... Light passage hole , 14 …… Photoelectric conversion element array 15 …… Lead, 16 …… Dummy element

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H04N 1/028 A ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Office reference number FI technical display location H04N 1/028 A

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】層状の光電変換部ならびに該光電変換部の
両主面にそれぞれ配設して成る共通電極および個別電極
とを備えた光電変換素子アレイを基板上に形成し、該光
電変換素子アレイと対応する部位に光源を備え、この光
源が被検知体を投光し、その反射光を光電変換素子アレ
イが受光し、この光電変換素子アレイから順次時系列に
読取り信号が得られるようにした読取り装置において、
前記光電変換素子アレイの端部の光電変換素子に隣接し
てダミー用素子を形成し、かつ該ダミー用素子の個別電
極を接地して暗状態における光電変換素子の個別電極と
同電位にせしめたことを特徴とする読取り装置。
1. A photoelectric conversion element array comprising a layered photoelectric conversion section and a common electrode and an individual electrode respectively arranged on both main surfaces of the photoelectric conversion section is formed on a substrate, and the photoelectric conversion element is formed. A light source is provided in a portion corresponding to the array, the light source projects the object to be detected, and the reflected light is received by the photoelectric conversion element array so that read signals can be sequentially obtained from the photoelectric conversion element array in time series. In the reading device,
A dummy element was formed adjacent to the photoelectric conversion element at the end of the photoelectric conversion element array, and the individual electrode of the dummy element was grounded so as to have the same potential as the individual electrode of the photoelectric conversion element in the dark state. A reading device characterized by the above.
JP62020781A 1987-01-30 1987-01-30 Reader Expired - Lifetime JPH0828790B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62020781A JPH0828790B2 (en) 1987-01-30 1987-01-30 Reader

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62020781A JPH0828790B2 (en) 1987-01-30 1987-01-30 Reader

Publications (2)

Publication Number Publication Date
JPS63187964A JPS63187964A (en) 1988-08-03
JPH0828790B2 true JPH0828790B2 (en) 1996-03-21

Family

ID=12036671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62020781A Expired - Lifetime JPH0828790B2 (en) 1987-01-30 1987-01-30 Reader

Country Status (1)

Country Link
JP (1) JPH0828790B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH021166A (en) * 1988-03-24 1990-01-05 Ricoh Co Ltd Contact-type image sensor
JPH0766930A (en) * 1993-08-27 1995-03-10 Nec Corp Facsimile equipment

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5387619A (en) * 1977-01-13 1978-08-02 Toshiba Corp Solid pickup unit
JPS56102168A (en) * 1980-01-19 1981-08-15 Fujitsu Ltd Video signal processing

Also Published As

Publication number Publication date
JPS63187964A (en) 1988-08-03

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