JPH08286390A - Inspection method for photoresist substrate and manufacture of photoresist substrate - Google Patents

Abstract

PURPOSE: To provide an inspection method by which an inspection before the development of a photoresist substrate is performed and at the same time to provide a manufacture for the photoresist substrate which improves yield of the photoresist substrate by utilizing it. CONSTITUTION: After a photosensitive light (435nm) is irradiated on a photosensitive substrate formed by coating a base board such as a glass, etc., with photosensitive agent through a mask, this photosensitive body is irradiated by an inspection light (500nm) whose wavelength is longer than this light so that faults are chemically detected. When the photosensitive body irradiated by the photosensitive light is observed, the contents to be resisted due to change in optical characteristics can be observed with the visual observation or an optical system even before the pre-development stage.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of inspecting a photoresist substrate and a method of manufacturing a photoresist substrate.

[0002]

2. Description of the Related Art Photoetching is used to form a pattern on an integrated circuit. This method irradiates a photosensitive substrate, which is a silicon substrate or a glass substrate coated with a photosensitizer (PAC), with light through a mask. By developing this, a photoresist substrate is obtained. However, if the photoresist substrate is defective at this time, the substrate cannot be used as a defective product and must be discarded.

The present invention has been made to solve the above-mentioned conventional drawbacks, and an object thereof is to provide a method for inspecting a photoresist substrate which enables inspection before development of the photoresist substrate, and further, It is an object of the present invention to provide a method for manufacturing a photoresist substrate that can improve the yield of the photoresist substrate by utilizing this.

[0004]

Therefore, in the method for inspecting a photoresist substrate according to a first aspect, a photosensitive substrate formed by coating a substrate such as glass with a photosensitive agent is irradiated with light for exposure through a mask, and then the photosensitive substrate is exposed. It is characterized in that the body is irradiated with inspection light having a wavelength longer than the above light to optically detect a defect.

In the method for inspecting a photoresist substrate according to claim 2, the photosensitizer is 2,1,5-naphthoquinonediazide or 2,1,4-naphthoquinonediazide, and the wavelength of the light for photosensitization is about 435 nm. In this case, the inspection light is light having a wavelength of 500 nm or more.

Further, in the method of manufacturing a photoresist substrate according to a third aspect, after the inspection according to the first or second aspect, the cryogen in the excessively exposed portion is removed by laser light having a wavelength of 500 nm or more. Is characterized by.

In the method of manufacturing a photoresist substrate according to claim 4, after the inspection according to claim 1 or 2, the non-exposed portion to be exposed is re-irradiated with the light for exposure. .

In the method of manufacturing a photoresist substrate according to a fifth aspect, the light for re-irradiation is light having a wavelength of about 450 nm.

[0009]

In the method of inspecting a photoresist substrate according to claims 1 and 2, when the photosensitive member irradiated with the light for sensitization is observed, even if the photosensitive member is not developed, the contents which are resisted due to the change of the optical characteristics are found. It is possible to observe by visual observation or by an optical system. This is because no change in color itself is observed before and after exposure, but a clear change in light absorption appears, for example, in the ultraviolet absorption spectrum shown in FIG. Then, because of the change in the refractive index due to the photoreaction, the connection drawn on the substrate before development can be observed with the eye or the optical system.

Further, if the above inspection method is utilized as in the method for manufacturing a photoresist substrate according to claims 3 to 5,
Since it is possible to repair defects such as patterns in the stage before development, it is possible to improve the manufacturing yield of the photoresist substrate.

[0011]

EXAMPLES Next, specific examples of the method of inspecting a photoresist substrate and the method of manufacturing a photoresist substrate according to the present invention will be described in detail with reference to the drawings.

First, a photosensitive material (PAC: photo-active-compound) is formed on a silicon substrate and a glass substrate.
The photosensitive substrate coated with d) is irradiated with light through a mask. When this is developed, a photoresist substrate is completed. In the above, the azo group of the photosensitizer (PAC) is cleaved by photoreaction and becomes indene ketene, which reacts with water to become indenecarboxylic acid and becomes alkali soluble. Then, it is difficult to dissolve in the developing solution, and it becomes easy to dissolve after the photoreaction. This is because after PAC becomes indene ketene by photoreaction, heat causes cross-linking.
In this exposure process, light of 435 nm is emitted from a mercury light source. When the substrate irradiated with light was observed, the contents that had already been resisted due to the change in optical characteristics before development were observed with the eyes and the optical system. The ultraviolet absorption spectra before and after exposure are shown in FIG.
From this, it can be seen that there is a clear change in absorption before and after exposure, but no color change is observed. Therefore, due to the change in the refractive index due to the photoreaction, the connection drawn on the substrate before development is observed with the eyes and the optical system. That is, as can be seen from FIG. 1, exposure to light having a wavelength of 500 nm or more does not cause photosensitization. Therefore, for a portion where the optical system detects a defect and is excessively exposed, the cryogen at the defect portion is irradiated with laser light (wavelength 50 nm).
0 nm or more). When the area to be exposed is not exposed, 450 nm light is irradiated. It has become possible to treat defects at a stage before development in such a process.

In the above description, a diazonaphthoquinone-novolac resist is used as the photoresist. At this time, 2,1,5 naphthoquinonediazide was used as a photosensitive group. Novolak (Novolac)
ak) This is dispersed in a resin substrate (backbone group). As the photosensitive group, 2,1,4 naphthoquinonediazide may be used, and as the backbone group, trihydroxy-benzophenone may be used.

As the developing solution, a sodium hydroxide (NaOH) aqueous solution (aqueous base) was used.

In the case of the above-mentioned photoreceptor before development, 500 n
When the light of m or more is transmitted and observed, the light-sensitive area is darker than the other areas. Therefore, by observing the dark portion by a known pattern recognition method and comparing the observed pattern with the reference pattern, the defect at the time of exposure can be grasped.

[0016]

According to the method of inspecting the photoresist substrate of the first and second aspects, it is possible to inspect the photoresist substrate before development.

If the above inspection method is utilized as in the method of manufacturing a photoresist substrate according to claims 3 to 5, defects such as patterns can be repaired before development. It is possible to improve the manufacturing yield of the photoresist substrate.

[Brief description of drawings]

FIG. 1 is a graph showing an ultraviolet absorption spectrum of a photoresist substrate before and after exposure to light.

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Claims (5)

[Claims] 1. A photosensitive substrate obtained by coating a base material such as glass with a photosensitizer is irradiated with light for photosensitization through a mask, and then the photoconductor is irradiated with inspection light having a wavelength longer than the above light to optically. A method for inspecting a photoresist substrate, which comprises detecting defects in the substrate. 2. The photosensitizer is 2,1,5-naphthoquinonediazide or 2,1,4-naphthoquinonediazide, and the inspection light is 500 nm or more when the wavelength of the light for sensitization is about 435 nm. 2. The method for inspecting a photoresist substrate according to claim 1, wherein the light has a wavelength of. 3. A method for manufacturing a photoresist substrate, comprising: after the inspection according to claim 1 or claim 2, removing the cryogen in the excessively exposed portion with laser light having a wavelength of 500 nm or more. 4. A method for manufacturing a photoresist substrate, which comprises, after the inspection according to claim 1 or claim 2, irradiating the non-exposed portion to be exposed with light for exposure again. 5. The method of manufacturing a photoresist substrate according to claim 4, wherein the light for re-irradiation is light having a wavelength of about 450 nm.