JPH0828397B2 - Resin-sealed semiconductor device - Google Patents

Resin-sealed semiconductor device

Info

Publication number
JPH0828397B2
JPH0828397B2 JP5137056A JP13705693A JPH0828397B2 JP H0828397 B2 JPH0828397 B2 JP H0828397B2 JP 5137056 A JP5137056 A JP 5137056A JP 13705693 A JP13705693 A JP 13705693A JP H0828397 B2 JPH0828397 B2 JP H0828397B2
Authority
JP
Japan
Prior art keywords
insulating film
resin
lead
frame
tape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP5137056A
Other languages
Japanese (ja)
Other versions
JPH06349888A (en
Inventor
卓 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP5137056A priority Critical patent/JPH0828397B2/en
Publication of JPH06349888A publication Critical patent/JPH06349888A/en
Publication of JPH0828397B2 publication Critical patent/JPH0828397B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は樹脂封止型半導体装置に
関し、特にフィルムキャリアテープとリードフレームを
複合させて用いた樹脂封止型半導体装置(以下複合型フ
ラットパッケージと記す)に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device, and more particularly to a resin-encapsulated semiconductor device (hereinafter referred to as a composite type flat package) using a composite film carrier tape and a lead frame.

【0002】[0002]

【従来の技術】半導体装置のパッケージとしては樹脂封
止型とセラミック封止型の2種類に大きく分類される
が、安価で量産性に適していることから樹脂封止型が主
流となっている。
2. Description of the Related Art Semiconductor device packages are roughly classified into two types, resin-sealed types and ceramic-sealed types, but resin-sealed types are the mainstream because they are inexpensive and suitable for mass production. .

【0003】また、近年の半導体装置等の電子部品に対
する小型・薄型化、多機能化の要求に伴い、従来のリー
ドフレームではパターン加工性に限界があり、多ピン狭
ピッチのリードフレームを製造するのが困難となってき
たため、この対策としてフィルムキャリアテープとリー
ドフレームを複合させた複合型フラットパッケージが検
討されている。
Further, in response to recent demands for smaller and thinner electronic parts such as semiconductor devices and multifunctionalization, the conventional lead frame has a limit in pattern workability, and a lead frame having a multi-pin narrow pitch is manufactured. Since this has become difficult, a composite flat package in which a film carrier tape and a lead frame are composited is being considered as a countermeasure.

【0004】図2(a),(b)は従来の樹脂封止型半
導体装置の一例を示す平面図およびA−A′線断面図で
ある。
2A and 2B are a plan view and a sectional view taken along the line AA 'showing an example of a conventional resin-sealed semiconductor device.

【0005】図2(a),(b)に示すように、フレー
ム3に接続された吊りリード4aで支持されたアイラン
ド4と、フレーム3に接続されたタイバー12により支
持され且つアイランド4の周囲に配置された内部リード
5と内部リード5の外側延長上に設けた外部リード6を
有するリードフレームのアイランド4の上に銀ペースト
2でマウントされた半導体チップ1と、ポリイミド等の
絶縁フィルム枠13の上に接着されて半導体チップ1の
電極上に形成されたバンプ10にインナーリードボンデ
ィング(以下ILBと記す)された銅等の金属箔からな
る内部リード8と、内部リード8の外側に接続され且つ
リードフレームの内部リード5とアウターリードボンデ
ィング(以下OLBと記す)された外部リード9を有す
るテープキャリアとを有して構成され、その後の工程
で、リードフレームの内部リード5を含む半導体チップ
1をエポキシ樹脂等で樹脂封止し、複合型フラットパッ
ケージを構成する。
As shown in FIGS. 2 (a) and 2 (b), the island 4 supported by the suspension leads 4a connected to the frame 3 and the tie bar 12 connected to the frame 3 and the periphery of the island 4 are supported. The semiconductor chip 1 mounted with the silver paste 2 on the island 4 of the lead frame having the inner lead 5 arranged on the outer side and the outer lead 6 provided on the outer extension of the inner lead 5, and the insulating film frame 13 such as polyimide. Is connected to the outside of the internal lead 8 and an internal lead 8 made of a metal foil such as copper that has been inner lead bonded (hereinafter referred to as ILB) to a bump 10 formed on the electrode of the semiconductor chip 1 by being bonded onto the internal lead 8. A tape carrier having an inner lead 5 of a lead frame and an outer lead 9 which is outer lead bonded (hereinafter referred to as OLB). Is configured to have a, in a subsequent step, resin sealing semiconductor chip 1 including the inner leads 5 of the lead frame with epoxy resin, the composite type flat package.

【0006】ここで、半導体チップ1のバンプ10とリ
ードフレームの内部リード5との間に接続された内部リ
ード8および外部リード9を有するテープキャリアを介
在させることにより、多ピン狭ピッチ化に対応できる複
合型フラットパッケージを構成できる。
Here, by interposing a tape carrier having an internal lead 8 and an external lead 9 connected between the bump 10 of the semiconductor chip 1 and the internal lead 5 of the lead frame, it is possible to cope with the narrowing of the number of pins. A complex flat package can be constructed.

【0007】[0007]

【発明が解決しようとする課題】この従来の樹脂封止型
半導体装置では、フィルムキャリアのリードの変形を防
止すために内部リードと外部リードの中間に接着した絶
縁フィルム枠の強度が弱いために樹脂封止の際の樹脂の
流動で絶縁フィルム枠が変形してしまい、その結果とし
てパッケージの中心に半導体チップが収まらなかった
り、モールド金型内を流れる樹脂のバランスが崩れて樹
脂の流れが上下均等に流れないためにパッケージ表面に
ボイドが発生するという問題点があった。
In this conventional resin-encapsulated semiconductor device, the strength of the insulating film frame bonded between the inner lead and the outer lead in order to prevent deformation of the lead of the film carrier is weak. The insulating film frame is deformed by the flow of resin during resin encapsulation, and as a result the semiconductor chip does not fit in the center of the package, or the resin flowing in the mold die is out of balance and the resin flows up and down. There is a problem that voids are generated on the package surface because they do not flow evenly.

【0008】また、このフィルムキャリアでは、モール
ド金型内に入れたときの金型からの熱で絶縁フィルム枠
が膨張し、樹脂を金型に注入する以前に既にキャリアテ
ープが変形して所定の位置より浮き沈みしてしまうとい
う問題もある。
Further, in this film carrier, the insulating film frame is expanded by the heat from the mold when it is placed in the mold, and the carrier tape is already deformed before the resin is injected into the mold so that a predetermined amount is obtained. There is also the problem of ups and downs from the position.

【0009】さらに、パッケージに温度サイクル試験
(以下T/Cと記す)やIRリフロー等の熱応力を加え
るとフィルムキャリアテープの熱膨張係数が他のパッケ
ージ構成材料(例えば封止樹脂)の熱膨張係数よりも大
きいために相対的に絶縁フィルム枠が大きく膨張・収縮
し、ILB部あるいはOLB部の接合信頼性を劣化させ
るという問題があった。また、場合によってはリード切
断や、半導体素子に応力が集中しクラックが発生するこ
ともあった。
Further, when thermal stress such as temperature cycle test (hereinafter referred to as T / C) or IR reflow is applied to the package, the thermal expansion coefficient of the film carrier tape causes thermal expansion of other package constituent materials (for example, sealing resin). Since the coefficient is larger than the coefficient, there is a problem that the insulating film frame relatively expands and contracts greatly, and the joining reliability of the ILB portion or the OLB portion deteriorates. Further, in some cases, lead cutting or stress concentration on the semiconductor element may cause cracks.

【0010】[0010]

【課題を解決するための手段】本発明の樹脂封止型半導
体装置は、アイランドと、前記アイランドの周囲に配置
して設けた第1の内部リードを有するリードフレーム
と、前記アイランド上に搭載した半導体チップと、絶縁
フィルム枠上に接着して設けた第2の内部リードおよび
外部リードとを有し前記第2の内部リードを前記半導体
チップの電極と接続し前記外部リードを前記第1の内部
リードに接続したフィルムキャリアを有する樹脂封止型
半導体装置において、前記絶縁フィルム枠が絶縁フィル
ムテープと前記絶縁フィルムテープの端部を互に連結し
て枠状に形成する金属箔テープ又は樹脂膜とを有する。
A resin-sealed semiconductor device of the present invention is mounted on an island, a lead frame having a first internal lead arranged around the island, and the island. A semiconductor chip, a second inner lead and an outer lead that are provided by being bonded on an insulating film frame, and the second inner lead is connected to an electrode of the semiconductor chip, and the outer lead is connected to the first inner lead. In a resin-sealed semiconductor device having a film carrier connected to a lead, the insulating film frame is a metal foil tape or a resin film in which an insulating film tape and end portions of the insulating film tape are connected to each other to form a frame shape. Have.

【0011】[0011]

【実施例】次に、本発明について図面を参照して説明す
る。
Next, the present invention will be described with reference to the drawings.

【0012】図1は本発明の一実施例を示す平面図であ
る。
FIG. 1 is a plan view showing an embodiment of the present invention.

【0013】図1に示すように、従来例と同様にフレー
ム3に吊りリード4aで支持されたアイランド4と、タ
イバー12により支持された内部リード5および外部リ
ード6を有するリードフレームのアイランド4の上に半
導体チップ1をマウントし、ポリイミド等からなる絶縁
フィルムテープ12の端部を金属箔テープ14で互に連
結し枠上に形成した絶縁フィルム枠の絶縁フィルムテー
プ12の上に接着して半導体チップ1に設けた電極上に
形成したバンプに銅等の金属箔からなる内部リード8を
ILBで接続し、内部リード8の他端に設けた外部リー
ド9をリードフレームの内部リード5にOLBで接続す
る。
As shown in FIG. 1, an island 4 of a lead frame having an island 4 supported by a suspension lead 4a on a frame 3 and an inner lead 5 and an outer lead 6 supported by a tie bar 12 as in the conventional example. The semiconductor chip 1 is mounted on the top, and the ends of the insulating film tape 12 made of polyimide or the like are connected to each other by the metal foil tape 14 and adhered onto the insulating film tape 12 of the insulating film frame formed on the frame to form a semiconductor. The internal leads 8 made of metal foil such as copper are connected to the bumps formed on the electrodes provided on the chip 1 by ILB, and the external leads 9 provided at the other end of the internal leads 8 are connected to the internal leads 5 of the lead frame by OLB. Connecting.

【0014】ここで、絶縁フィルムテープ12を金属箔
テープ14で互に連結した絶縁フィルム枠(又は枠状の
絶縁フィルムの四隅を切断して分割し、且つ金属箔テー
プで互に連結した絶縁フィルム枠)とこの絶縁フィルム
枠に接着した内部リード8および外部リード9からなる
フィルムキャリアを使用することにより、絶縁フィルム
テープ12の面積が小さくなり樹脂封止の際の樹脂の流
動やモールド金型からの熱による絶縁フィルム枠の変形
が小さくなり、また金属箔テープ14により絶縁フィル
ム枠の変形を抑えることができるため、絶縁フィルム枠
の変動や浮き沈みを抑制できるので半導体チップ1の位
置ずれや注入樹脂の不均等性が低減でき、ボイドの発生
を防ぐことができる。
Here, an insulating film frame in which the insulating film tape 12 is connected to each other by a metal foil tape 14 (or an insulating film which is divided by cutting four corners of a frame-shaped insulating film and connected to each other by a metal foil tape) By using a film carrier consisting of a frame) and the inner leads 8 and the outer leads 9 adhered to the insulating film frame, the area of the insulating film tape 12 is reduced, and the resin flow during resin sealing and the molding die Since the deformation of the insulating film frame due to the heat of 1 is reduced, and the deformation of the insulating film frame can be suppressed by the metal foil tape 14, it is possible to suppress the fluctuation and ups and downs of the insulating film frame, and thus the positional displacement of the semiconductor chip 1 and the injection resin. It is possible to reduce the non-uniformity and to prevent the occurrence of voids.

【0015】なお、金属箔テープ14の代りに液状の樹
脂(例えば住友ベークライト(株)製CRP−3000
/CRH−300)を用い絶縁フィルムテープ12の相
互間をスクリーン印刷法又はポッティング法でつなぎ、
熱硬化した樹脂膜で互に連結しても良く、絶縁フィルム
テープ12に連結する樹脂膜を絶縁フィルムテープ12
よりも硬い樹脂膜で固定することにより、絶縁フィルム
枠の変形を第1の実施例よりも更に低減できる利点があ
る。また連結する樹脂膜としては絶縁フィムルテープ1
2よりも熱膨張係数の小さいものが望ましい。
A liquid resin (for example, CRP-3000 manufactured by Sumitomo Bakelite Co., Ltd.) is used instead of the metal foil tape 14.
/ CRH-300), the insulating film tapes 12 are connected to each other by a screen printing method or a potting method,
Thermosetting resin films may be connected to each other, and the resin film to be connected to the insulating film tape 12 may be connected to the insulating film tape 12.
Fixing with a harder resin film has an advantage that the deformation of the insulating film frame can be further reduced as compared with the first embodiment. Insulating film tape 1 is used as the resin film to be connected.
It is desirable that the coefficient of thermal expansion be smaller than 2.

【0016】表1は本発明の第1および第2の実施例と
従来例について絶縁フィルム枠の浮き沈み量、ボイド発
生率、パッケージ不良発生率のそれぞれを比較したもの
である。
Table 1 compares the ups and downs of the insulating film frame, the void occurrence rate, and the package defect occurrence rate for the first and second embodiments of the present invention and the conventional example.

【0017】[0017]

【表1】 [Table 1]

【0018】表1に示すように、第1の実施例では絶縁
フィルム枠の浮き沈み量は、従来の1/2倍以下になり
ボイド発生率もゼロになる。また、T/C500サイク
ルまでパッケージの電気的不良は発生しなくなる。ま
た、第2の実施例では絶縁フィルム枠の浮き沈み量は従
来の1/3倍以下になり、パッケージの信頼性はT/C
1000サイクルまで維持できる。
As shown in Table 1, in the first embodiment, the amount of ups and downs of the insulating film frame is less than half the conventional amount, and the void generation rate becomes zero. Also, no electrical failure of the package occurs until the T / C 500 cycles. In addition, in the second embodiment, the amount of ups and downs of the insulating film frame is less than 1/3 of the conventional one, and the package reliability is T / C.
It can be maintained up to 1000 cycles.

【0019】[0019]

【発明の効果】以上説明したように本発明は、フィルム
キャリアのリードの変形を防止するための絶縁フィルム
枠の四隅を切断して分割し、且つ金属箔テープあるいは
樹脂膜で分割された絶縁フィルムテープを互に接着する
ことにより、モールド封止における樹脂の流動に伴う絶
縁フィルム枠の浮き沈みやモールド金型内に装着した際
に発生する絶縁フィルム枠の熱変形を防ぎ、ボイドの発
生を防止できるという効果を有する。
As described above, according to the present invention, the insulating film frame is divided by cutting the four corners of the insulating film frame for preventing the deformation of the leads of the film carrier, and is divided by the metal foil tape or the resin film. By adhering the tapes to each other, it is possible to prevent the insulating film frame from rising and falling due to the resin flow in the mold sealing and the thermal deformation of the insulating film frame that occurs when it is mounted in the mold, thus preventing the occurrence of voids. Has the effect.

【0020】また、パッケージに熱応力を加えた際にも
絶縁フィルム枠の膨張・収縮を抑制し、パッケージの信
頼性劣化を防止できる。
Further, even when thermal stress is applied to the package, expansion and contraction of the insulating film frame can be suppressed, and deterioration of reliability of the package can be prevented.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示す平面図。FIG. 1 is a plan view showing an embodiment of the present invention.

【図2】従来の樹脂封止型半導体装置の一例を示す平面
図およびA−A′線断面図。
FIG. 2 is a plan view and an AA ′ line cross-sectional view showing an example of a conventional resin-encapsulated semiconductor device.

【符号の説明】[Explanation of symbols]

1 半導体チップ 2 銀ペースト 3 フレーム 4 アイランド 5,8 内部リード 6,9 外部リード 10 バンプ 12 絶縁フィルムテープ 13 絶縁フィルム枠 14 金属箔テープ 1 Semiconductor Chip 2 Silver Paste 3 Frame 4 Island 5,8 Inner Lead 6,9 Outer Lead 10 Bump 12 Insulating Film Tape 13 Insulating Film Frame 14 Metal Foil Tape

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 アイランドと、前記アイランドの周囲に
配置して設けた第1の内部リードを有するリードフレー
ムと、前記アイランド上に搭載した半導体チップと、絶
縁フィルム枠上に接着して設けた第2の内部リードおよ
び外部リードとを有し前記第2の内部リードを前記半導
体チップの電極と接続し前記外部リードを前記第1の内
部リードに接続したフィルムキャリアを有する樹脂封止
型半導体装置において、前記絶縁フィルム枠が絶縁フィ
ルムテープと前記絶縁フィルムテープの端部を互に連結
して枠状に形成する金属箔テープ又は樹脂膜とを有する
ことを特徴とする樹脂封止型半導体装置。
1. A lead frame having an island, a first internal lead arranged around the island, a semiconductor chip mounted on the island, and an adhesive film provided on an insulating film frame. A resin-sealed semiconductor device having a film carrier having two inner leads and an outer lead, the second inner lead being connected to an electrode of the semiconductor chip, and the outer lead being connected to the first inner lead. The resin-encapsulated semiconductor device, wherein the insulating film frame has an insulating film tape and a metal foil tape or a resin film that connects the end portions of the insulating film tape to each other to form a frame shape.
JP5137056A 1993-06-08 1993-06-08 Resin-sealed semiconductor device Expired - Lifetime JPH0828397B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5137056A JPH0828397B2 (en) 1993-06-08 1993-06-08 Resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5137056A JPH0828397B2 (en) 1993-06-08 1993-06-08 Resin-sealed semiconductor device

Publications (2)

Publication Number Publication Date
JPH06349888A JPH06349888A (en) 1994-12-22
JPH0828397B2 true JPH0828397B2 (en) 1996-03-21

Family

ID=15189858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5137056A Expired - Lifetime JPH0828397B2 (en) 1993-06-08 1993-06-08 Resin-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPH0828397B2 (en)

Also Published As

Publication number Publication date
JPH06349888A (en) 1994-12-22

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