JPH08281553A - Method and device for mirror finished surface polishing of semiconductor wafer - Google Patents
Method and device for mirror finished surface polishing of semiconductor waferInfo
- Publication number
- JPH08281553A JPH08281553A JP8900495A JP8900495A JPH08281553A JP H08281553 A JPH08281553 A JP H08281553A JP 8900495 A JP8900495 A JP 8900495A JP 8900495 A JP8900495 A JP 8900495A JP H08281553 A JPH08281553 A JP H08281553A
- Authority
- JP
- Japan
- Prior art keywords
- disk
- wafer
- polishing
- pressure
- polishing pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、ウェーハの研磨方法お
よび装置に係り、特にSiなどの半導体ウェーハを保持
し、他方の面を鏡面研磨するのにおいて、ウェーハの平
坦度の向上を志向したウェーハの研磨方法および装置に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer polishing method and apparatus, and more particularly to a wafer intended to improve the flatness of a wafer for holding a semiconductor wafer such as Si and mirror-polishing the other surface. The present invention relates to a polishing method and device.
【0002】[0002]
【従来の技術】従来の研磨方法は、表面にポリッシング
パッド7を接着した研磨定盤8を、その回転駆動軸6の
まわりに回転させ、前記ポリッシングパッド7と対抗す
る面にウェーハ1を接着した円盤13の該ウェーハを加
圧円盤4により前記ポリッシングパッド7に押圧しなが
ら研磨剤を供給するものである。2. Description of the Related Art In a conventional polishing method, a polishing platen 8 having a polishing pad 7 adhered to its surface is rotated around a rotary drive shaft 6 thereof, and a wafer 1 is adhered to a surface facing the polishing pad 7. An abrasive is supplied while pressing the wafer on the disk 13 against the polishing pad 7 by the pressure disk 4.
【0003】[0003]
【発明が解決しようとする課題】従来では、ウェーハ1
平坦度は接着する円盤13の形状および接着部への異物
14の噛み込みの影響を受けて悪化する。また、研磨時
にポリッシングパッド7の粘弾性特性による縁ダレ効果
の影響を受けてウェーハ1の平坦度が悪化する(図4参
照)。Conventionally, the wafer 1
The flatness deteriorates under the influence of the shape of the disk 13 to be bonded and the foreign matter 14 being caught in the bonding portion. Further, during polishing, the flatness of the wafer 1 deteriorates under the influence of the edge sagging effect due to the viscoelastic property of the polishing pad 7 (see FIG. 4).
【0004】本発明は、このような従来の研磨方法の問
題点を解決し、鏡面研磨で平坦度の良いウェーハを容易
に得ることができるウェーハ鏡面研磨方法と装置を提供
することを目的とする。An object of the present invention is to solve the problems of the conventional polishing method and to provide a wafer mirror polishing method and apparatus which can easily obtain a wafer having a good flatness by mirror polishing. .
【0005】[0005]
【課題を解決するための手段】本発明はウェーハを接着
する円盤2をドーナツ形状にして接着面積を減少させ、
円盤2の形状および接着部への異物14の噛み込みの影
響を減少し平坦度を向上する。また、接着円盤2の中空
内部に、制御された流体あるいは気体を媒体とする研磨
圧力を負荷し、ウェーハ1の凸状変形量を調整し、ポリ
ッシングパッド7の粘弾性特性による縁ダレ効果の影響
を減少し、ウェーハ1の平坦度悪化を抑制する(図3参
照)。According to the present invention, the disk 2 for bonding wafers is formed in a donut shape to reduce the bonding area,
The influence of the foreign matter 14 being caught in the shape of the disc 2 and the adhesive portion is reduced, and the flatness is improved. Further, a polishing pressure using a controlled fluid or gas as a medium is loaded into the hollow inside of the bonding disk 2 to adjust the amount of convex deformation of the wafer 1, and the influence of the edge sagging effect due to the viscoelastic property of the polishing pad 7. To reduce the flatness of the wafer 1 (see FIG. 3).
【0006】[0006]
【作用】ウェーハ1を接着する円盤2をドーナツ形状に
して接着面積を減少させることにより、円盤2からウェ
ーハ1への形状転写を抑制し、かつ異物14の噛み込み
の確率を減少させる。また、接着円盤4の中空内部に流
体あるいは気体を媒体として研磨圧力を負荷し、ウェー
ハ1の形状を凸状に変形させポリッシングパッド7への
沈み込み量を調整することにより縁ダレを減少させる
(図2〜4参照)。The disk 2 for adhering the wafer 1 is formed into a donut shape to reduce the adhering area, thereby suppressing the transfer of the shape from the disk 2 to the wafer 1 and reducing the probability of the foreign matter 14 being caught. Further, a polishing pressure is applied to the hollow inside of the adhesive disk 4 using a fluid or gas as a medium to deform the shape of the wafer 1 into a convex shape and adjust the amount of sinking into the polishing pad 7 to reduce the edge sag ( 2-4).
【0007】[0007]
【実施例】以下、本発明を具現化する装置の一実施例
を、図面に基づいて説明する。図1は、本発明の一実施
例に係るウェーハ鏡面研磨装置の要部を示す構成図であ
り、図2〜4に示した部材と共通する部材には同一の符
号を付し、その説明は一部省略してある。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of an apparatus embodying the present invention will be described below with reference to the drawings. FIG. 1 is a configuration diagram showing a main part of a wafer mirror polishing apparatus according to an embodiment of the present invention. Members common to those shown in FIGS. 2 to 4 are designated by the same reference numerals, and their description will be omitted. Some are omitted.
【0008】図1に示すように、ウェーハ鏡面研磨装置
は、被研磨材としてのウェーハ1を保持する接着円盤2
を有し、該接着円盤2におけるウェーハ1を保持した側
と対向する面にはポリッシングパッド7を接着した研磨
定盤8が配置されている。接着円盤2を研磨定盤8に対
して加圧する加圧機構として加圧円盤4と、この加圧円
盤4に加圧力と自転回転運動を伝達する加圧円盤公転盤
5が設けられている。この加圧円盤4の下方位置に、前
記接着円盤2が装着されており、ウェーハ1が枚葉で接
着された接着円盤2が加圧円盤公転盤5と同じ公転運動
をするガイド円盤3に複数枚装着されるようになってい
る。As shown in FIG. 1, the wafer mirror polishing apparatus includes an adhesive disk 2 for holding a wafer 1 as a material to be polished.
A polishing platen 8 having a polishing pad 7 bonded thereto is disposed on the surface of the bonding disk 2 that faces the side holding the wafer 1. As a pressurizing mechanism for pressurizing the adhesive disc 2 against the polishing platen 8, a pressurizing disc 4 and a pressurizing disc revolution plate 5 for transmitting a pressurizing force and a rotational rotation motion to the pressurizing disc 4 are provided. The adhesive disc 2 is mounted below the pressure disc 4, and a plurality of the adhesion discs 2 having the wafers 1 adhered to each other on the guide disc 3 that revolves in the same manner as the pressure disc revolution disc 5. It is designed to be attached.
【0009】研磨定盤8は、図示しないモータなどが接
続された研磨定盤回転軸9により回転駆動され、接着円
盤2と相対的に摺動する。研磨定盤8の上面には粘弾性
体であるポリッシングパッド7が接着されており、加圧
円盤4により研磨定盤8に接着円盤2を押圧しながら自
転運動をさせ、またガイド円盤3を介して公転運動を接
着円盤2に与えながらポリッシングパッド7上に研磨剤
を供給管10により供給することによりウェーハ1の表
面が鏡面研磨される。The polishing platen 8 is rotationally driven by a polishing platen rotating shaft 9 to which a motor or the like (not shown) is connected, and slides relative to the bonding disc 2. A polishing pad 7, which is a viscoelastic body, is adhered to the upper surface of the polishing platen 8. The polishing platen 8 is rotated while pressing the bonding platen 2 against the polishing platen 8 by the pressure disk 4, and also through the guide disk 3. The surface of the wafer 1 is mirror-polished by supplying the polishing pad 7 with the polishing agent while supplying the polishing disk 7 with an orbital motion by the supply pipe 10.
【0010】図2に示すようなドーナツ形状の接着円盤
2にウェーハ1を接着し加圧円盤4の下方に装着する。
比較のため図4に従来の接着円盤13を用いて研磨した
例を示す。従来の接着円盤13では接着円盤形状や異物
14噛み込みの影響を受け(図4の(a)は研磨開始
時、(b)は研磨終了時を示す)、研磨後接着円盤13
から剥離したウェーハ1の形状は悪化する(図4の
(c))。これに対し図2に示すようなドーナツ形状の
接着円盤2では、接着円盤形状や異物14噛み込みの影
響を受けず、平坦度の良いウェーハが得られる(図2の
(c))。A wafer 1 is bonded to a doughnut-shaped bonding disk 2 as shown in FIG. 2 and mounted under a pressure disk 4.
For comparison, FIG. 4 shows an example of polishing using the conventional adhesive disk 13. The conventional adhesive disk 13 is affected by the shape of the adhesive disk and the inclusion of the foreign matter 14 ((a) of FIG. 4 shows the start of polishing, (b) shows the end of polishing), and the post-polishing adhesive disk 13
The shape of the wafer 1 separated from the wafer deteriorates ((c) of FIG. 4). On the other hand, in the doughnut-shaped adhesive disc 2 as shown in FIG. 2, a wafer having a good flatness can be obtained without being affected by the adhesive disc shape and the foreign matter 14 being caught (FIG. 2C).
【0011】図3に加圧円盤4の詳細を示す。加圧円盤
4はゴムスカート4a、自転加圧円盤4b、加圧円盤自
転軸4cで構成され、加圧円盤公転盤5から自転運動が
伝達される。また、加圧流体あるいは加圧気体4dは、
加圧円盤公転盤5、加圧円盤自転軸4c、自転加圧円盤
4b内部に設けられた穴を通して接着円盤2の内側に供
給されウェーハ1の裏面を加圧する。この加圧流体ある
いは加圧気体4dは、図1に示す如く、所定の研磨圧力
を負荷するため圧力調整弁(11)及び制御装置(1
2)を介して供給される。これによりウェーハ1の形状
をポリッシングパッド7に対して凸状に変形させ、ポリ
ッシングパッド7への沈み込み量を調整することにより
縁ダレを減少させる。ゴムスカート4aは加圧流体ある
いは加圧気体4dが外部に漏れないようシールするとと
もに、加圧円盤4の自転運動を接着円盤2に伝達する。
この自転運動によりウェーハ1は、研磨定盤8あるいは
ポリッシングパッド7の表面形状によらないテーパーの
ないウェーハ形状とすることができる。FIG. 3 shows details of the pressure disk 4. The pressure disk 4 is composed of a rubber skirt 4a, a rotation pressure disk 4b, and a pressure disk rotation shaft 4c, and the rotation motion is transmitted from the pressure disk revolution disk 5. Further, the pressurized fluid or pressurized gas 4d is
It is supplied to the inside of the adhesive disk 2 through the holes provided inside the pressure disk revolution disk 5, the pressure disk rotation shaft 4c, and the rotation pressure disk 4b to press the back surface of the wafer 1. As shown in FIG. 1, the pressurized fluid or pressurized gas 4d applies a predetermined polishing pressure to the pressure control valve (11) and the control device (1).
2). As a result, the shape of the wafer 1 is deformed into a convex shape with respect to the polishing pad 7, and the amount of sinking into the polishing pad 7 is adjusted to reduce the edge sag. The rubber skirt 4a seals the pressurized fluid or the pressurized gas 4d so as not to leak to the outside, and at the same time transmits the rotation motion of the pressure disk 4 to the bonding disk 2.
By this rotation movement, the wafer 1 can be formed into a wafer shape without a taper that does not depend on the surface shape of the polishing platen 8 or the polishing pad 7.
【0012】[0012]
【発明の効果】以上説明したように、本発明に係る研磨
方法及び装置においては、ウェーハを接着する接着円盤
がドーナツ形状を有しており、ウェーハの裏面を加圧流
体あるいは加圧気体で均一な加圧を与えながら自転運動
して研磨するので、接着円盤形状や異物噛み込みの影響
を受けずかつ研磨定盤あるいはポリッシングパッドの表
面形状によらないテーパーのない平坦度の良いウェーハ
が得られる。As described above, in the polishing method and apparatus according to the present invention, the bonding disk for bonding the wafer has a donut shape, and the back surface of the wafer is uniformly coated with the pressurized fluid or the pressurized gas. Since it is rotated and polished while applying various pressures, a flat wafer with no taper can be obtained that is not affected by the shape of the adhesive disk or the inclusion of foreign matter and does not depend on the surface shape of the polishing platen or polishing pad. .
【図1】本発明の一実施例に係るウェーハ鏡面研磨装置
の要部を示す構成図である。FIG. 1 is a configuration diagram showing a main part of a wafer mirror polishing apparatus according to an embodiment of the present invention.
【図2】図1に示されるウェーハが接着されたドーナツ
形状接着円盤の研磨時の状態と剥離後のウェーハ形状を
示す。FIG. 2 shows a state of a donut-shaped adhesive disk having the wafer shown in FIG. 1 bonded thereto during polishing and a wafer shape after peeling.
【図3】図1に示される加圧円盤の詳細構造とウェーハ
が接着された接着円盤の配置を示す。FIG. 3 shows the detailed structure of the pressure disk shown in FIG. 1 and the arrangement of the bonding disk to which the wafer is bonded.
【図4】ウェーハが接着された通常接着円盤の研磨時の
状態と剥離後のウェーハ形状を示す。FIG. 4 shows a state of a normal bonding disk to which a wafer is bonded during polishing and a wafer shape after peeling.
1 ウェーハ 2 ドーナツ接着円盤 3 ガイド円盤 4 加圧円盤 4a ゴムスカート 4b 自転加圧円盤 4c 加圧円盤自転軸 4d 加圧流体あるいは加圧気体 5 加圧円盤公転盤 6 研磨円盤回転軸 7 ポリッシングパッド 8 研磨定盤 9 研磨定盤回転軸 10 研磨剤供給管 11 圧力調整弁 12 制御装置 13 ウェーハ接着円盤 14 異物 1 wafer 2 donut adhesive disk 3 guide disk 4 pressure disk 4a rubber skirt 4b rotation pressure disk 4c pressure disk rotation axis 4d pressure fluid or pressure gas 5 pressure disk revolution disk 6 polishing disk rotation axis 7 polishing pad 8 Polishing surface plate 9 Polishing surface plate rotating shaft 10 Abrasive supply pipe 11 Pressure adjusting valve 12 Control device 13 Wafer bonding disk 14 Foreign matter
Claims (2)
した研磨定盤(8)を、その回転軸(9)のまわりに駆
動回転させ、前記ポリッシングパッド(7)と対向する
面にウェーハ(1)を接着した接着円盤(2)の該ウェ
ーハ(1)を加圧円盤(4)により前記ポリッシングパ
ッド(7)に押圧しながら研磨剤を供給することによっ
て、前記ウェーハを研磨する方法において、前記ウェー
ハ(1)を接着する円盤としてドーナツ形状をした接着
円盤(2)を用い、該接着円盤の中空内部に流体あるい
は気体を媒体として研磨圧力を負荷し、ウェーハ加工面
の圧力分布をほぼ均一にしたことを特徴とするウェーハ
研磨方法。1. A polishing platen (8) having a polishing pad (7) adhered to its surface is driven to rotate around its rotation axis (9), and a wafer (1) is provided on the surface facing the polishing pad (7). ) Is adhered to the wafer (1) of the bonding disk (2) while pressing the polishing pad (7) with the pressure disk (4) to supply an abrasive, thereby polishing the wafer. A doughnut-shaped adhesive disc (2) is used as a disc for adhering the wafer (1), and polishing pressure is applied to the hollow interior of the adhesive disc using a fluid or gas as a medium to make the pressure distribution on the wafer processing surface substantially uniform. A method for polishing a wafer, characterized in that
した研磨定盤(8)を、その回転軸(9)のまわりに駆
動回転させ、前記ポリッシングパッド(7)と対向する
面にウェーハ(1)を接着した接着円盤(2)の該ウェ
ーハ(1)を加圧円盤(4)により前記ポリッシングパ
ッド(7)に押圧しながら研磨剤を供給することによっ
て、前記ウェーハを研磨する研磨装置において、前記ウ
ェーハ(1)を接着する円盤としてドーナツ形状をした
接着円盤(2)と、該接着円盤の中空内部に流体あるい
は気体を媒体として研磨圧力を負荷するための圧力調整
弁(11)と制御装置(12)とを具備したことを特徴
とするウェーハ研磨装置。2. A polishing platen (8) having a polishing pad (7) adhered to its surface is driven and rotated around its rotation axis (9), and a wafer (1) is provided on the surface facing the polishing pad (7). In the polishing apparatus for polishing the wafer by pressing the wafer (1) of the adhesive disk (2) with the pressure disk (4) pressed against the polishing pad (7) to supply an abrasive. A donut-shaped bonding disk (2) as a disk for bonding the wafer (1), a pressure adjusting valve (11) for applying a polishing pressure using a fluid or gas as a medium in the hollow inside of the bonding disk, and a control device. (12) A wafer polishing apparatus comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8900495A JPH08281553A (en) | 1995-04-14 | 1995-04-14 | Method and device for mirror finished surface polishing of semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8900495A JPH08281553A (en) | 1995-04-14 | 1995-04-14 | Method and device for mirror finished surface polishing of semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH08281553A true JPH08281553A (en) | 1996-10-29 |
Family
ID=13958692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8900495A Withdrawn JPH08281553A (en) | 1995-04-14 | 1995-04-14 | Method and device for mirror finished surface polishing of semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH08281553A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11176775A (en) * | 1997-12-15 | 1999-07-02 | Matsushita Electric Ind Co Ltd | Apparatus and method for chemical machine polishing |
JP2010120160A (en) * | 1999-03-03 | 2010-06-03 | Ebara Corp | Polishing head |
CN115383603A (en) * | 2022-10-27 | 2022-11-25 | 邢台朝阳机械制造有限公司 | Green and environment-friendly polishing machine tool and use method thereof |
-
1995
- 1995-04-14 JP JP8900495A patent/JPH08281553A/en not_active Withdrawn
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11176775A (en) * | 1997-12-15 | 1999-07-02 | Matsushita Electric Ind Co Ltd | Apparatus and method for chemical machine polishing |
JP2010120160A (en) * | 1999-03-03 | 2010-06-03 | Ebara Corp | Polishing head |
CN115383603A (en) * | 2022-10-27 | 2022-11-25 | 邢台朝阳机械制造有限公司 | Green and environment-friendly polishing machine tool and use method thereof |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20020702 |