JPH08279628A - Electroluminescent element - Google Patents
Electroluminescent elementInfo
- Publication number
- JPH08279628A JPH08279628A JP10324295A JP10324295A JPH08279628A JP H08279628 A JPH08279628 A JP H08279628A JP 10324295 A JP10324295 A JP 10324295A JP 10324295 A JP10324295 A JP 10324295A JP H08279628 A JPH08279628 A JP H08279628A
- Authority
- JP
- Japan
- Prior art keywords
- transport layer
- hole transport
- conductive layer
- layer
- electroluminescent device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 6
- 230000005525 hole transport Effects 0.000 claims description 48
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 238000007743 anodising Methods 0.000 claims description 2
- 238000005401 electroluminescence Methods 0.000 claims 1
- 230000027756 respiratory electron transport chain Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
Landscapes
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、電界発光素子に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electroluminescent device.
【０００２】[0002]
【従来の技術】従来、この種の電界発光素子としては、
図７に示すような構造の発光ダイオード（ＬＥＤ）が知
られている。この発光ダイオードは、同図に示すよう
に、ガラスなどでなる透明基板１上に透明電極（アノー
ド電極）２が形成され、透明電極２上に有機材料からな
る正孔輸送層（Ｐ型半導体層）３が形成されている。そ
して、この正孔輸送層３上には、有機材料からなる電子
輸送層（Ｎ型半導体層）４が接合され、電子輸送層４の
上にアルミニウムなどでなる背面電極（カソード電極）
５が形成されることにより、発光ダイオードが構成され
ている。なお、上記した透明電極２は、その透明性や仕
事関数の値を主な理由としてＩＴＯ（IndiumTin Oxid
e）が用いられている。2. Description of the Related Art Conventionally, as an electroluminescent device of this type,
A light emitting diode (LED) having a structure as shown in FIG. 7 is known. As shown in the figure, in this light emitting diode, a transparent electrode (anode electrode) 2 is formed on a transparent substrate 1 made of glass or the like, and a hole transport layer (P-type semiconductor layer) made of an organic material is formed on the transparent electrode 2. ) 3 is formed. An electron transport layer (N-type semiconductor layer) 4 made of an organic material is bonded onto the hole transport layer 3, and a back electrode (cathode electrode) made of aluminum or the like is formed on the electron transport layer 4.
The formation of 5 forms a light emitting diode. The above-mentioned transparent electrode 2 is mainly made of ITO (Indium Tin Oxid) mainly because of its transparency and work function value.
e) is used.
【０００３】このような構成において、透明電極２から
はその界面を介して正孔輸送層３へ正孔が注入され、背
面電極５からはその界面を介して電子輸送層４へ電子が
注入される。正孔輸送層３からは正孔が、電子輸送層４
からは電子がＰＮ接合に移動して、正孔と電子とが再結
合し、その際に光を発するようになっている。In such a structure, holes are injected from the transparent electrode 2 into the hole transport layer 3 through its interface, and electrons are injected from the back electrode 5 into the electron transport layer 4 through its interface. It Holes from the hole transport layer 3 and electrons from the electron transport layer 4
From this point, the electrons move to the PN junction, the holes and the electrons are recombined, and at that time, light is emitted.
【０００４】[0004]
【発明が解決しようとする課題】このような電界発光素
子においては、正孔の注入効率は単位発光面積当たりの
注入界面面積が大きいことが好ましいが、透明電極（Ｉ
ＴＯ膜）２が一般的に蒸着、スパッタなどの手段により
透明基板１の平坦な表面上に形成されているため、形成
される透明電極表面も同様に平坦なものであり、単位発
光面積当たりの注入界面面積の増大という改善を行うこ
とは困難であった。また、透明電極２上の正孔輸送層３
と電子輸送層４との界面も同様に平坦な面であるため、
その接合面積を大きくして発光量を増大させるのに素子
の大型化を招くという問題があった。In such an electroluminescent device, the hole injection efficiency is preferably such that the injection interface area per unit light emitting area is large, but the transparent electrode (I
Since the TO film) 2 is generally formed on the flat surface of the transparent substrate 1 by means such as vapor deposition or sputtering, the surface of the transparent electrode formed is also flat, which is It was difficult to make the improvement of increasing the injection interface area. In addition, the hole transport layer 3 on the transparent electrode 2
Since the interface between the electron transport layer 4 and the electron transport layer 4 is also a flat surface,
There is a problem in that the element is upsized in order to increase the amount of light emission by increasing the bonding area.
【０００５】この発明は、単位面積当たりの発光量が大
きな高輝度の電界発光素子を提供することを目的として
いる。An object of the present invention is to provide a high-brightness electroluminescent device which emits a large amount of light per unit area.
【０００６】[0006]
【課題を解決するための手段】請求項１記載の発明は、
アノード電極上に正孔輸送層が形成され、前記正孔輸送
層上に電子輸送層が接合され、前記電子輸送層上にカソ
ード電極が形成されてなる電界発光素子において、前記
アノード電極は複数の孔が形成された導電層からなり、
前記孔の表面に前記正孔輸送層が接触していることを特
徴としている。請求項２記載の発明は、前記導電層が、
Ｐ型の不純物を導入した半導体材料でなることを特徴と
している。請求項３記載の発明は、アノード電極上に正
孔輸送層が形成され、前記正孔輸送層上に電子輸送層が
接合され、前記電子輸送層上にカソード電極が形成され
てなる電界発光素子において、前記正孔輸送層の前記電
子輸送層と接合する面に凹凸が形成されていることを特
徴としている。請求項４記載の発明は、前記正孔輸送層
は、アモルファスシリコンからなり前記凹凸が、正孔輸
送層の表面を陽極酸化した後にエッチングして形成され
たことを特徴としている。According to the first aspect of the present invention,
In an electroluminescent device having a hole transport layer formed on an anode electrode, an electron transport layer bonded on the hole transport layer, and a cathode electrode formed on the electron transport layer, the anode electrode is composed of a plurality of anode electrodes. Consisting of a conductive layer with holes formed,
The hole transport layer is in contact with the surface of the hole. In the invention according to claim 2, the conductive layer is
It is characterized by being made of a semiconductor material into which a P-type impurity is introduced. According to a third aspect of the present invention, an electroluminescent device having a hole transport layer formed on an anode electrode, an electron transport layer bonded to the hole transport layer, and a cathode electrode formed on the electron transport layer. In the above, the surface of the hole transport layer which is joined to the electron transport layer is formed with irregularities. The invention according to claim 4 is characterized in that the hole transport layer is made of amorphous silicon, and the irregularities are formed by etching after anodizing the surface of the hole transport layer.
【０００７】[0007]
【作用】請求項１および請求項２記載の発明において
は、アノード電極と正孔輸送層との間に設けられた導電
層にアノード電極から正孔が注入され、導電層から正孔
輸送層へ正孔が注入される。特に、導電層には孔が形成
され、かつこの孔内に正孔輸送層が入り込んでいる構成
であるため、導電層と正孔輸送層との接触面積（注入界
面面積）が単なる平面での接触に比較して大きくなり、
この接触面を介して多量の正孔が正孔輸送層へ注入され
る。このため、素子の単位面積当たりの発光量が増加
し、高輝度化を図ることができる。請求項３および４記
載の発明においては、正孔輸送層の電子輸送層と接合す
る面に凹凸が形成されているため、正孔及び電子が再結
合する面積が大きく発光面積が増加する。In the inventions of claims 1 and 2, holes are injected from the anode electrode into the conductive layer provided between the anode electrode and the hole transport layer, and the conductive layer is transferred to the hole transport layer. Holes are injected. In particular, since the hole is formed in the conductive layer and the hole transport layer is in the hole, the contact area (injection interface area) between the conductive layer and the hole transport layer is a simple plane. It becomes bigger compared to contact,
A large amount of holes are injected into the hole transport layer via this contact surface. Therefore, the amount of light emission per unit area of the device is increased, and high brightness can be achieved. In the inventions of claims 3 and 4, since the surface of the hole transporting layer that is in contact with the electron transporting layer is provided with irregularities, the area where holes and electrons are recombined is large and the light emitting area is increased.
【０００８】[0008]
【実施例】以下、この発明に係る電界発光素子の詳細を
図面に示す各実施例に基づいて説明する。 （実施例１）図１は、本発明の電界発光素子の実施例１
を示す断面図である。図中、１０は本実施例の電界発光
素子を示している。この電界発光素子１０では、ガラス
などでなる透明基板１１上に、ＩＴＯでなるアノード電
極としての透明電極１２が形成されている。透明電極１
２上には、高密度な細孔が広がっている（連続）多孔質
な導電層１３が形成されている。なお、この細孔は導電
層１３の上下方向に曲がりくねりながらも貫通するよう
になっている。この導電層１３は、例えばボロン（Ｂ）
などのＰ型不純物を導入したアモルファスシリコンでな
る。そして、導電層１３上には、Ｐ型の有機半導体材料
でなる正孔輸送層１４が設けられると共に、この正孔輸
送層１４は導電層１３内に形成された細孔内にも密に充
填されている。なお、このように導電層１３内の細孔内
に正孔輸送層１４を充填するには、正孔輸送層１４を湿
式の成膜法で形成することで可能となる。また、正孔輸
送層１４上には、Ｎ型の半導体材料でなる電子輸送層１
５が接合するように形成されている。さらに、電子輸送
層１５上には、例えばアルミニウムなどでなるカソード
電極としての背面電極１６が形成されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of the electroluminescent device according to the present invention will be described below with reference to the embodiments shown in the drawings. (Embodiment 1) FIG. 1 shows Embodiment 1 of the electroluminescent device of the present invention.
FIG. In the figure, 10 indicates the electroluminescent element of the present embodiment. In this electroluminescent device 10, a transparent electrode 12 made of ITO as an anode electrode is formed on a transparent substrate 11 made of glass or the like. Transparent electrode 1
On (2), a (continuous) porous conductive layer 13 in which high-density pores are spread is formed. The pores are formed so that they penetrate the conductive layer 13 while winding in the vertical direction. The conductive layer 13 is, for example, boron (B).
It is made of amorphous silicon introduced with P-type impurities such as. A hole transport layer 14 made of a P-type organic semiconductor material is provided on the conductive layer 13, and the hole transport layer 14 is also densely filled in the pores formed in the conductive layer 13. Has been done. The hole transport layer 14 can be filled in the pores in the conductive layer 13 as described above by forming the hole transport layer 14 by a wet film forming method. The electron transport layer 1 made of an N-type semiconductor material is formed on the hole transport layer 14.
5 are formed so as to be joined. Further, on the electron transport layer 15, a back electrode 16 made of, for example, aluminum as a cathode electrode is formed.
【０００９】本実施例では、導電層１３が連続多孔質の
構造を有するため、正孔輸送層１４と導電層１３との接
触面積は著しく大きくなり、透明電極１２から正孔輸送
層１４に導電層１３を介して注入される正孔の量も増大
する。このため、電子輸送層１５との界面に移動できる
正孔の量が多く、背面電極１６から電子輸送層１５に注
入された電子と、正孔輸送層１４からの正孔とが界面で
多くの再結合を行うため、正孔輸送層１４と電子輸送層
１５との接合の単位面積当たりの発光量が増大し、高輝
度化を達成することができる。In this embodiment, since the conductive layer 13 has a continuous porous structure, the contact area between the hole transport layer 14 and the conductive layer 13 is significantly increased, and the transparent electrode 12 conducts to the hole transport layer 14. The amount of holes injected through layer 13 also increases. Therefore, a large amount of holes can move to the interface with the electron transport layer 15, and many electrons injected from the back electrode 16 into the electron transport layer 15 and holes from the hole transport layer 14 are present at the interface. Since recombination is performed, the amount of light emission per unit area of the junction between the hole transport layer 14 and the electron transport layer 15 is increased, and high brightness can be achieved.
【００１０】（実施例２）図２は本発明の電界発光素子
の実施例２を示す断面図であり、図３は本実施例の電界
発光素子の導電層１３の斜視図である。本実施例では、
図に示すように、透明電極１２上に形成する導電層１３
を、複数の突堤部１３Ａを平行に並べた構造としてい
る。そして、図２に示すように、導電層１２上に正孔輸
送層１４が形成されると共に、導電層１２を構成する突
堤部１３Ａどうしの間に正孔輸送層１４が充填されるよ
うになっている。このような導電層１３を形成するに
は、リソグラフィー技術およびエッチング技術を用いる
ことにより、突堤部１３Ａ…をパターニングすることが
できる。本実施例における他の構成は、上記実施例１と
同様である。本実施例においても、上記実施例と同様の
作用、効果を得ることができる。(Embodiment 2) FIG. 2 is a sectional view showing Embodiment 2 of the electroluminescent device of the present invention, and FIG. 3 is a perspective view of the conductive layer 13 of the electroluminescent device of this embodiment. In this embodiment,
As shown in the figure, the conductive layer 13 formed on the transparent electrode 12
Has a structure in which a plurality of jetty portions 13A are arranged in parallel. Then, as shown in FIG. 2, the hole transport layer 14 is formed on the conductive layer 12, and the hole transport layer 14 is filled between the jetty portions 13A forming the conductive layer 12. ing. In order to form such a conductive layer 13, the jetty portions 13A ... Can be patterned by using a lithography technique and an etching technique. Other configurations in this embodiment are similar to those in the above-mentioned first embodiment. Also in this embodiment, it is possible to obtain the same actions and effects as those of the above embodiment.
【００１１】（実施例３）図４は、本発明の電界発光素
子の実施例３における導電層１３の構造を示す斜視図で
ある。この導電層１３は、上下方向（背面電極１６と透
明電極１２とを結ぶ方向）に貫通する横断面矩形状の孔
１３Ｂが多数形成された構造である。本実施例において
も、他の構成は上記実施例１と同様であり、作用、効果
も同様である。(Embodiment 3) FIG. 4 is a perspective view showing the structure of the conductive layer 13 in Embodiment 3 of the electroluminescent device of the present invention. The conductive layer 13 has a structure in which a large number of holes 13B having a rectangular cross section are formed so as to penetrate in the up-down direction (direction connecting the back electrode 16 and the transparent electrode 12). Also in this embodiment, the other structure is the same as that of the first embodiment, and the operation and effect are also the same.
【００１２】（実施例４）図５は、本発明の電界発光素
子の実施例４を示す断面図であり、図６は本実施例の電
界発光素子の正孔輸送層を示す平面図である。本実施例
は、ガラスなどでなる透明基板１１上にＩＴＯでなる透
明電極１２が形成され、透明電極１２上に、上面に凹部
１４Ａと凸部１４Ｂが形成された正孔輸送層１４が形成
されている。そして、この正孔輸送層１４上には、湿式
の成膜法によりＥＬ特性を示す有機半導体材料でなる電
子輸送層１５が形成されている。さらに、電子輸送層１
５上には、アルミニウムなどでなる背面電極１６が形成
されている。(Embodiment 4) FIG. 5 is a sectional view showing an embodiment 4 of the electroluminescent device of the present invention, and FIG. 6 is a plan view showing a hole transport layer of the electroluminescent device of the present embodiment. . In this embodiment, the transparent electrode 12 made of ITO is formed on the transparent substrate 11 made of glass, and the hole transport layer 14 having the concave portions 14A and the convex portions 14B formed on the upper surface is formed on the transparent electrode 12. ing. An electron transport layer 15 made of an organic semiconductor material exhibiting EL characteristics is formed on the hole transport layer 14 by a wet film forming method. Further, the electron transport layer 1
A back electrode 16 made of aluminum or the like is formed on the surface 5.
【００１３】本実施例においては、正孔輸送層１４がＰ
型のアモルファスシリコンでなる。この正孔輸送層１４
の上面に凹部１４Ａおよび凸部１４Ｂを形成するには、
アモルファスシリコンの表面を陽極酸化して表面にポー
ラス形皮膜を形成し、このポーラス形皮膜をウェットエ
ッチングで除去することにより、図５に示すような凹凸
を有する正孔輸送層１４形成できる。凹部１４Ａは、図
６に示すように、多数が開設されており、電子輸送層１
５がこの凹部１４Ａ内に入り込むようになっている。こ
のため、正孔輸送層１４と電子輸送層１５とのＰＮ接合
面の面積は、単に平面で接合するものに比較して大幅に
大きくなっている。この結果、発光面積が増大し、１素
子当たりの発光量が大幅に大きくなっている。In this embodiment, the hole transport layer 14 is P
Type of amorphous silicon. This hole transport layer 14
To form the concave portions 14A and the convex portions 14B on the upper surface of
The surface of the amorphous silicon is anodized to form a porous film on the surface, and the porous film is removed by wet etching to form the hole transport layer 14 having irregularities as shown in FIG. As shown in FIG. 6, a large number of recesses 14A are provided, and the electron transport layer 1
5 enters into this recess 14A. For this reason, the area of the PN junction surface between the hole transport layer 14 and the electron transport layer 15 is significantly larger than that of a mere mere plane junction. As a result, the light emitting area is increased, and the light emission amount per element is significantly increased.
【００１４】以上、実施例１〜実施例４について説明し
たが、本発明はこれらに限定されるものではなく、構成
の要旨に付随する各種の設計変更が可能である。Although the first to fourth embodiments have been described above, the present invention is not limited to these, and various design changes associated with the gist of the configuration can be made.
【００１５】[0015]
【発明の効果】以上の説明から明らかなように、請求項
１および請求項２記載の発明によれば、効果を正孔輸送
層へ多くの正孔を注入することが可能となり、単位面積
当たりの発光量を増加させる効果を奏する。また、所望
の輝度を得るために、より低い電圧での駆動が可能にな
る。このため、本発明をディスプレイに適用すれば高輝
度な表示で消費電力の少ないディスプレイを実現するこ
とができる。また、請求項３〜６記載の発明において
は、正孔輸送層と電子輸送層との接合面積を実質的に増
加させることができるため、発光面積を増やすことがで
き、１素子当たりの発光量を増加させる効果を奏する。As is apparent from the above description, according to the first and second aspects of the present invention, it is possible to inject a large number of holes into the hole transport layer, and it is possible to increase the number of holes per unit area. The effect of increasing the light emission amount of is produced. In addition, it is possible to drive at a lower voltage in order to obtain a desired brightness. Therefore, by applying the present invention to a display, a display with high brightness and low power consumption can be realized. Further, in the inventions according to claims 3 to 6, since the junction area between the hole transport layer and the electron transport layer can be substantially increased, the light emitting area can be increased, and the amount of light emitted per element is increased. Has the effect of increasing.
【図１】本発明の実施例１の断面図。FIG. 1 is a sectional view of a first embodiment of the present invention.
【図２】本発明の実施例２の断面図。FIG. 2 is a sectional view of a second embodiment of the present invention.
【図３】本発明の実施例２の導電層の斜視図。FIG. 3 is a perspective view of a conductive layer according to a second embodiment of the present invention.
【図４】本発明の実施例３の導電層の斜視図。FIG. 4 is a perspective view of a conductive layer according to a third embodiment of the present invention.
【図５】本発明の実施例４の断面図。FIG. 5 is a sectional view of a fourth embodiment of the present invention.
【図６】本発明の実施例４の正孔輸送層の平面図。FIG. 6 is a plan view of a hole transport layer of Example 4 of the present invention.
【図７】従来の電界発光素子の断面図。FIG. 7 is a cross-sectional view of a conventional electroluminescent device.
１２ 透明電極 １３ 導電層 １３Ａ 突堤部 １３Ｂ 孔 １４ 正孔輸送層 １４Ａ 凹部 １４Ｂ 凸部 １５ 電子輸送層 １６ 背面電極 12 Transparent Electrode 13 Conductive Layer 13A Jetty 13B Hole 14 Hole Transport Layer 14A Recess 14B Convex 15 Electron Transport Layer 16 Back Electrode
Claims (4)
れ、前記正孔輸送層上に電子輸送層が接合され、前記電
子輸送層上にカソード電極が形成されてなる電界発光素
子において、 前記アノード電極は複数の孔が形成された導電層からな
り、前記孔の表面に前記正孔輸送層が接触していること
を特徴とするの電界発光素子。1. An electroluminescent device comprising a hole transport layer formed on an anode electrode, an electron transport layer bonded on the hole transport layer, and a cathode electrode formed on the electron transport layer. The electroluminescent device, wherein the anode electrode comprises a conductive layer having a plurality of holes formed therein, and the hole transport layer is in contact with the surface of the holes.
半導体材料でなることを特徴とする請求項１記載の電界
発光素子。2. The electroluminescent device according to claim 1, wherein the conductive layer is made of a semiconductor material into which a P-type impurity is introduced.
れ、前記正孔輸送層上に電子輸送層が接合され、前記電
子輸送層上にカソード電極が形成されてなる電界発光素
子において、 前記正孔輸送層の前記電子輸送層と接合する面に凹凸が
形成されていることを特徴とする電界発光素子。3. An electroluminescent device comprising a hole transport layer formed on an anode electrode, an electron transport layer bonded on the hole transport layer, and a cathode electrode formed on the electron transport layer. An electroluminescent device, characterized in that unevenness is formed on a surface of the hole transport layer which is joined to the electron transport layer.
ンからなり、前記凹凸は、正孔輸送層の表面を陽極酸化
した後にエッチングして形成されたことを特徴とする請
求項３記載の電界発光素子。4. The electroluminescence according to claim 3, wherein the hole transport layer is made of amorphous silicon, and the irregularities are formed by etching the surface of the hole transport layer after anodizing. element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10324295A JPH08279628A (en) | 1995-04-05 | 1995-04-05 | Electroluminescent element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10324295A JPH08279628A (en) | 1995-04-05 | 1995-04-05 | Electroluminescent element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08279628A true JPH08279628A (en) | 1996-10-22 |
Family
ID=14348978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10324295A Pending JPH08279628A (en) | 1995-04-05 | 1995-04-05 | Electroluminescent element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08279628A (en) |
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| WO2001026425A1 (en) * | 1999-10-05 | 2001-04-12 | Matsushita Electric Industrial Co., Ltd. | Luminescent device and method for manufacturing the same, and display and illuminator comprising the same |
| JP2005093728A (en) * | 2003-09-17 | 2005-04-07 | Toyoda Gosei Co Ltd | Light-emitting device |
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| JP2007123282A (en) * | 2004-02-26 | 2007-05-17 | Seiko Epson Corp | Organic electroluminescent device and electronic equipment |
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| EP0969524A1 (en) * | 1998-07-03 | 2000-01-05 | Isis Innovation Limited | Light emitter |
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| JP4497156B2 (en) * | 2004-02-26 | 2010-07-07 | セイコーエプソン株式会社 | Organic electroluminescence device and electronic device |
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| JP2007258222A (en) * | 2006-03-20 | 2007-10-04 | Canon Inc | Light-emitting element, and manufacturing method of light-emitting element |
| KR100870542B1 (en) * | 2006-09-29 | 2008-11-26 | 부산대학교 산학협력단 | Organic light-emitting device with an organic-inorganic hybrid hole-injection/transporting layer and manufacturing method of the same |
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| WO2017020366A1 (en) * | 2015-08-06 | 2017-02-09 | 深圳市华星光电技术有限公司 | Organic light-emitting diode |
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