JPH08264520A - Semiconductor production system - Google Patents
Semiconductor production systemInfo
- Publication number
- JPH08264520A JPH08264520A JP9185495A JP9185495A JPH08264520A JP H08264520 A JPH08264520 A JP H08264520A JP 9185495 A JP9185495 A JP 9185495A JP 9185495 A JP9185495 A JP 9185495A JP H08264520 A JPH08264520 A JP H08264520A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- gas
- semiconductor manufacturing
- production system
- manufacturing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、膜を堆積する半導体製
造装置に関し、特にプラズマCVD装置内の残留水分量
の検出に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for depositing a film, and more particularly to detection of residual water content in a plasma CVD apparatus.
【0002】[0002]
【従来の技術】プラズマCVD装置は、半導体装置のパ
ッシベーション用の窒化膜や酸化膜などの固体の薄膜を
低温で形成する極めて有用な半導体製造装置である。2. Description of the Related Art A plasma CVD apparatus is an extremely useful semiconductor manufacturing apparatus for forming a solid thin film such as a nitride film or an oxide film for passivation of a semiconductor device at a low temperature.
【0003】図2は、従来のプラズマCVD装置の概略
構成図を示す。図2において、1は半導体基板、2は加
熱体であり、半導体基板1を熱する。また、3および4
は堆積させる膜の原料となるガスおよび不活性ガスのガ
ス導入部、5はプラズマ発生部、6は真空排気部であ
り、この真空排気部6では0.1〜数Torrの圧力で排気を
行い、原料ガスと不活性ガスをガス導入部3および4か
ら導入し、プラズマ発生部5にて原料ガスをプラズマ状
態にして堆積を行う。FIG. 2 is a schematic block diagram of a conventional plasma CVD apparatus. In FIG. 2, 1 is a semiconductor substrate, 2 is a heating body, and heats the semiconductor substrate 1. Also 3 and 4
Is a gas introduction part of a gas and an inert gas as a raw material of a film to be deposited, 5 is a plasma generating part, and 6 is a vacuum exhaust part. In this vacuum exhaust part 6, exhaust is performed at a pressure of 0.1 to several Torr, A gas and an inert gas are introduced from the gas introduction sections 3 and 4, and the source gas is put into a plasma state in the plasma generation section 5 to perform deposition.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、上記の
ような従来例の半導体製造装置においては、装置内の残
留水分量がわからなかったので水分を含まない良質な膜
を堆積するために必要以上に真空排気を行わなければな
らなかったし、実際に水分が完全に排気されているかど
うかわからないという問題があった。However, in the conventional semiconductor manufacturing apparatus as described above, the amount of residual water in the apparatus was not known, so that it was more than necessary to deposit a high-quality film containing no water. I had to evacuate, and there was the problem that I didn't know if the water had actually been completely evacuated.
【0005】本発明は、上記従来の問題点を解決するも
ので、水分を含まない良質な膜を適切な時刻に堆積処理
が開始できる半導体製造装置を提供することを目的とす
る。An object of the present invention is to solve the above-mentioned conventional problems and to provide a semiconductor manufacturing apparatus capable of starting a deposition process of a good quality film containing no water at an appropriate time.
【0006】[0006]
【課題を解決するための手段】本発明は上記目的を達成
するため、例えば、窒化膜や酸化膜等の固体の薄膜を堆
積するプラズマCVD装置に、残留不純物量中、特に残
留水分量を検出するための発光分光分析装置または質量
分析装置を有することを特徴とする。In order to achieve the above object, the present invention detects the amount of residual moisture, particularly the amount of residual water, in a plasma CVD apparatus for depositing a solid thin film such as a nitride film or an oxide film. It is characterized by having an emission spectroscopic analysis device or a mass analysis device for
【0007】[0007]
【作用】本発明によれば、半導体製造装置内の水分量が
検出され水分量がある設定値以下の量になってから堆積
を開始することができるので、水分を含まない良質な膜
を堆積することが可能となる。According to the present invention, since the amount of water in the semiconductor manufacturing apparatus is detected and the deposition can be started after the amount of water falls below a certain set value, a high-quality film containing no water is deposited. It becomes possible to do.
【0008】[0008]
【実施例】図1は本発明の一実施例における半導体製造
装置の構成図を示す。図1において、前記従来例の図2
と同じ構成部分には同じ符号を付し、その説明を省略す
る。ここで、7は発光分光分析装置であり、8は石英覗
き窓である。本実施例においては、石英覗き窓8を通し
て残留水分の水の発光スペクトルを発光分光分析装置7
でもって検出し、検出量が設定値以下になると同時に、
ガス導入部3から原料となるガスを導入し、プラズマ発
生部5にてプラズマ状態にして堆積を行う。したがっ
て、残留水分量がなくなった適切な時刻で膜を堆積でき
るので、良質な膜を作成できる。1 is a block diagram of a semiconductor manufacturing apparatus according to an embodiment of the present invention. In FIG. 1, FIG.
The same reference numerals are given to the same components as those, and the description thereof will be omitted. Here, 7 is an emission spectroscopic analyzer, and 8 is a quartz viewing window. In this embodiment, the emission spectrum of water of residual moisture is analyzed through the quartz observation window 8 by the emission spectroscopic analysis device 7.
And the detected amount is below the set value,
A gas serving as a raw material is introduced from the gas introduction unit 3, and a plasma is generated in the plasma generation unit 5 to perform deposition. Therefore, the film can be deposited at an appropriate time when the residual water content is exhausted, and a high quality film can be formed.
【0009】また上記の実施例では、水分の検出に発光
分光分析装置を用いているが、そのかわりにプラズマ発
生部内に質量分析装置を用いてもよい。In the above embodiment, the emission spectroscopic analyzer is used to detect water, but a mass spectrometer may be used in the plasma generator instead.
【0010】[0010]
【発明の効果】以上説明したように本発明の半導体製造
装置は、プラズマCVD装置またはプラズマ酸化装置な
どの半導体製造装置に発光分光分析装置または質量分析
装置を装備させることにより、水分を含まない良質な窒
化膜や酸化膜等の固体の薄膜を適切な時刻に堆積を始め
ることができる。As described above, according to the semiconductor manufacturing apparatus of the present invention, a semiconductor manufacturing apparatus such as a plasma CVD apparatus or a plasma oxidizing apparatus is equipped with an emission spectroscopic analysis apparatus or a mass analysis apparatus, so that it does not contain moisture. Deposition of a solid thin film such as a simple nitride film or oxide film can be started at an appropriate time.
【図1】本発明の一実施例における半導体製造装置の構
成図である。FIG. 1 is a configuration diagram of a semiconductor manufacturing apparatus according to an embodiment of the present invention.
【図2】従来の半導体製造装置の概略構成図である。FIG. 2 is a schematic configuration diagram of a conventional semiconductor manufacturing apparatus.
1…半導体基板、 2…加熱体、 3…堆積させる膜の
原料となるガスのガス導入部、 4…不活性ガスのガス
導入部、 5…プラズマ発生部、 6…真空排気部、
7…発光分光分析装置、 8…石英覗き窓。DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate, 2 ... Heating body, 3 ... Gas introduction part of gas used as the raw material of the film | membrane to deposit, 4 ... Gas introduction part of inert gas, 5 ... Plasma generation part, 6 ... Vacuum exhaust part,
7 ... Emission spectroscopy analyzer, 8 ... Quartz viewing window.
Claims (1)
中、特に残留水分量を検出するための発光分光分析装置
または質量分析装置を有することを特徴とする半導体製
造装置。1. A semiconductor manufacturing apparatus, characterized in that the plasma CVD apparatus has an emission spectroscopic analyzer or a mass spectrometer for detecting the amount of residual moisture in the amount of residual impurities.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9185495A JPH08264520A (en) | 1995-03-23 | 1995-03-23 | Semiconductor production system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9185495A JPH08264520A (en) | 1995-03-23 | 1995-03-23 | Semiconductor production system |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH08264520A true JPH08264520A (en) | 1996-10-11 |
Family
ID=14038155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9185495A Pending JPH08264520A (en) | 1995-03-23 | 1995-03-23 | Semiconductor production system |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH08264520A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003135952A (en) * | 2001-11-01 | 2003-05-13 | Nec Corp | Plasma treating system and plasma treating method |
KR101159597B1 (en) * | 2009-02-20 | 2012-06-27 | 도쿄엘렉트론가부시키가이샤 | Absorption spectroscopic analyzer for semiconductor manufacturing process |
-
1995
- 1995-03-23 JP JP9185495A patent/JPH08264520A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003135952A (en) * | 2001-11-01 | 2003-05-13 | Nec Corp | Plasma treating system and plasma treating method |
KR101159597B1 (en) * | 2009-02-20 | 2012-06-27 | 도쿄엘렉트론가부시키가이샤 | Absorption spectroscopic analyzer for semiconductor manufacturing process |
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