JPH08264520A - Semiconductor production system - Google Patents

Abstract

PURPOSE: To start deposition of a high quality film containing no moisture at an appropriate time. CONSTITUTION: A semiconductor production system, e.g. a plasma CVD system, is equipped with an emission spectroscope 7 or a mass spectroscope in order to detect the residual moisture. Immediately after the detected quantity drops below a set level, a material gas is introduced from a gas introducing section 3 and plasma of the material gas is generated from a plasma generating section 5. Consequently, a high quality film can be deposited.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for depositing a film, and more particularly to detection of residual water content in a plasma CVD apparatus.

[0002]

2. Description of the Related Art A plasma CVD apparatus is an extremely useful semiconductor manufacturing apparatus for forming a solid thin film such as a nitride film or an oxide film for passivation of a semiconductor device at a low temperature.

FIG. 2 is a schematic block diagram of a conventional plasma CVD apparatus. In FIG. 2, 1 is a semiconductor substrate, 2 is a heating body, and heats the semiconductor substrate 1. Also 3 and 4
Is a gas introduction part of a gas and an inert gas as a raw material of a film to be deposited, 5 is a plasma generating part, and 6 is a vacuum exhaust part. In this vacuum exhaust part 6, exhaust is performed at a pressure of 0.1 to several Torr, A gas and an inert gas are introduced from the gas introduction sections 3 and 4, and the source gas is put into a plasma state in the plasma generation section 5 to perform deposition.

[0004]

However, in the conventional semiconductor manufacturing apparatus as described above, the amount of residual water in the apparatus was not known, so that it was more than necessary to deposit a high-quality film containing no water. I had to evacuate, and there was the problem that I didn't know if the water had actually been completely evacuated.

An object of the present invention is to solve the above-mentioned conventional problems and to provide a semiconductor manufacturing apparatus capable of starting a deposition process of a good quality film containing no water at an appropriate time.

[0006]

In order to achieve the above object, the present invention detects the amount of residual moisture, particularly the amount of residual water, in a plasma CVD apparatus for depositing a solid thin film such as a nitride film or an oxide film. It is characterized by having an emission spectroscopic analysis device or a mass analysis device for

[0007]

According to the present invention, since the amount of water in the semiconductor manufacturing apparatus is detected and the deposition can be started after the amount of water falls below a certain set value, a high-quality film containing no water is deposited. It becomes possible to do.

[0008]

1 is a block diagram of a semiconductor manufacturing apparatus according to an embodiment of the present invention. In FIG. 1, FIG.
The same reference numerals are given to the same components as those, and the description thereof will be omitted. Here, 7 is an emission spectroscopic analyzer, and 8 is a quartz viewing window. In this embodiment, the emission spectrum of water of residual moisture is analyzed through the quartz observation window 8 by the emission spectroscopic analysis device 7.
And the detected amount is below the set value,
A gas serving as a raw material is introduced from the gas introduction unit 3, and a plasma is generated in the plasma generation unit 5 to perform deposition. Therefore, the film can be deposited at an appropriate time when the residual water content is exhausted, and a high quality film can be formed.

In the above embodiment, the emission spectroscopic analyzer is used to detect water, but a mass spectrometer may be used in the plasma generator instead.

[0010]

As described above, according to the semiconductor manufacturing apparatus of the present invention, a semiconductor manufacturing apparatus such as a plasma CVD apparatus or a plasma oxidizing apparatus is equipped with an emission spectroscopic analysis apparatus or a mass analysis apparatus, so that it does not contain moisture. Deposition of a solid thin film such as a simple nitride film or oxide film can be started at an appropriate time.

[Brief description of drawings]

FIG. 1 is a configuration diagram of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic configuration diagram of a conventional semiconductor manufacturing apparatus.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate, 2 ... Heating body, 3 ... Gas introduction part of gas used as the raw material of the film | membrane to deposit, 4 ... Gas introduction part of inert gas, 5 ... Plasma generation part, 6 ... Vacuum exhaust part,
7 ... Emission spectroscopy analyzer, 8 ... Quartz viewing window.

Claims (1)

[Claims] 1. A semiconductor manufacturing apparatus, characterized in that the plasma CVD apparatus has an emission spectroscopic analyzer or a mass spectrometer for detecting the amount of residual moisture in the amount of residual impurities.