JPH08255806A - Manufacture of resin-sealed semiconductor device - Google Patents

Abstract

PURPOSE: To shorten the manufacturing cycle of a semiconductor device and to improve the reliability and external appearance of the device by a method wherein the resin body, consisting of prefused thermoplastic resin composition, is transferred to the surface of a semiconductor chip, the resin-body-transferred semiconductor chip is arranged in a mold and the resin body is molded by cooling. CONSTITUTION: First, the semiconductor chip 2 mounted on a lead frame 3 is preheated at 300 deg.C in a dryer machine for the purpose of stabilizing adhesive strength of the semiconductor chip 2 and a resin-sealed sheet 1. Then, a flat heating plate 6 treated with carnanba wax is heated up, and after a sealed resin sheet 1 is attached and fused by heating, the fused sealed resin sheet 1 is transferred to the semiconductor chip 2. Then, the sealed resin sheet 1 is heated up again in the dryer machine, and the temperature of the sealed material is stabilized. Then, using a cooling hollow mold 7 with which a one-size sealed semiconductor element 2 is heated up to 140 deg.C, the external shape of the sealed resin attached to the semiconductor element 2 is shaped up and it is solidified by cooling.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a resin-encapsulated semiconductor device, and more particularly to a method of molding an encapsulation package using a thermoplastic resin.

[0002]

2. Description of the Related Art A conventional general resin-encapsulated semiconductor device has been obtained by encapsulating a semiconductor chip by a transfer molding method. In this method, for example, a tablet made of an epoxy resin composition containing an epoxy resin and a filler as a main component is heated and melted, and the mixture is poured into a mold using a low-pressure transfer molding machine, and high temperature and high pressure (160
It is a method of molding at 180 ° C. and 70 to 100 kg / cm ² ) and encapsulating a semiconductor chip with a cured epoxy resin composition. In this method, since the semiconductor chip is completely covered with the epoxy resin composition and is molded in a pressure state with a mold, the obtained resin-encapsulated semiconductor device has excellent reliability and the package has a good appearance. Is. Therefore, at present, most resin-sealed semiconductor devices are manufactured by this method. However, the transfer molding method has a problem of in-line manufacturing process.
In other words, the semiconductor device manufacturing process has been fully automated, and some semiconductor devices are automatically and unmanned on the manufacturing line. However, in the process of encapsulating the semiconductor chip, it is difficult to make in-line by the conventional transfer molding, and the production is performed by removing the line and batch processing.
The future method for manufacturing resin-encapsulated semiconductor devices will be completely unmanned,
Although we are aiming for complete in-line processing, it is difficult to make the process in-line with the transfer molding method.

As a molding method capable of in-line formation, a resin sheet made of an uncured thermosetting resin composition is placed on the surface of a semiconductor chip, and the resin sheet is melted and cured to seal a semiconductor element. Japanese Patent Laid-Open No. 5-
It is proposed in Japanese Patent No. 175264.

However, in the molding method using the above resin sheet, in the case of a resin sheet made of a thermosetting resin composition, the uncured resin sheet is fragile, resulting in poor production yield, short shelf life, and short storage. Cooling equipment such as refrigerator or freezer is required, molding time is long, after-curing is required to obtain the required reliability,
There were problems such as generation of harmful gas from the raw material during curing during molding, and difficulty in recycling when discarding the resin.

[0005]

On the other hand, if a resin sheet made of a thermoplastic resin composition is applied to the above method, the drawbacks of the thermosetting resin sheet as described above are solved, which is promising. .

However, when a resin sheet made of a thermoplastic resin composition is applied to the above method, the resin sheet is supplied onto a semiconductor element, placed in a mold, and the mold is heated.
Since it has to go through the process of cooling,
If the mold temperature is included above and below, it takes time to complete the sealing process and the manufacturing cycle cannot be shortened.

Further, without using a mold, a molten thermoplastic resin composition is adhered to a semiconductor chip and then cooled and solidified for sealing, or the thermoplastic resin composition is placed on the surface of the semiconductor chip and then There is a method of melting and adhering to a semiconductor chip, and further cooling and solidifying for sealing, but there is a drawback that the obtained resin-sealed semiconductor device is inferior in reliability and in appearance.

In view of the above points, the present invention can provide a resin-sealed semiconductor device which can shorten the manufacturing cycle and which is excellent in reliability and appearance.
It is an object of the present invention to provide a method for manufacturing a resin-encapsulated semiconductor device using a thermoplastic resin composition.

[0009]

The first invention of the present invention is as follows:
(1) A step of transferring a resin body made of a thermoplastic resin composition that has been softened in advance to one side or both sides of the semiconductor chip, and (2) disposing the semiconductor chip on which the resin body has been transferred inside the mold and cooling the resin body. The method for manufacturing a resin-encapsulated semiconductor device is characterized in that the semiconductor chip is resin-encapsulated by sequentially performing the steps of molding and molding.

A second aspect of the present invention is (1) a step of arranging a resin body made of a thermoplastic resin composition on one side or both sides of a semiconductor chip, and (2) heating above a softening point of the resin in advance. A step of arranging a semiconductor chip in which a resin body is arranged inside the molded die and softening the resin body to fill the resin body inside the die; and (3) cooling the die to mold the resin body to form a semiconductor chip. The method for manufacturing a resin-encapsulated semiconductor device is characterized by sequentially performing the step of encapsulating.

The third invention of the present invention comprises (1) a step of arranging a resin body made of a thermoplastic resin composition inside a mold which has been heated above the softening point of the resin to soften the resin body. , (2) a step of arranging the mold so that the softened resin body is arranged on one side or both sides of the semiconductor chip and filling the inside of the mold with the resin, and (3) cooling the mold to mold the resin body to form a semiconductor A method of manufacturing a resin-encapsulated semiconductor device, which comprises sequentially performing a step of encapsulating a chip.

The first aspect of the present invention will be described below. FIG. 1 is a schematic view conceptually showing an example of a sealing process of the first invention. For example, when the semiconductor chip 2 mounted on the semiconductor chip mounting bed 5 which is a part of the lead frame 3 is sealed with the thermoplastic resin composition, first, as a first step, as shown in FIG. First, the step of transferring the resin body 1 made of the thermoplastic resin composition which has been softened by being heated above the softening point on the heating plate 6 in advance to the surface of the semiconductor chip 2 is performed. Although it is transferred to one side of the semiconductor chip in FIG. 1, it may be transferred to both sides of the semiconductor chip. At this time, the semiconductor chip 2 is also preferably preheated to a temperature around the softening point of the resin. As a result, the resin body is temporarily adhered to the semiconductor chip and can be easily transported to the next step on the manufacturing line. Further, since the resin body adheres well to the semiconductor chip, it is possible to prevent the occurrence of voids or peeling inside the package after sealing. As a method for heating the semiconductor chip, there are methods such as passing through a heating furnace and irradiating with an infrared lamp. When transferring the resin body 1, the resin body 1
It is preferable to transfer the resin body 1 or the semiconductor chip 2 while inclining the resin body 1 or the semiconductor chip 2 so that a space is created between the semiconductor chip 2 and the lead frame 3 and voids or peeling do not occur inside the package after sealing. Finally, the heating plate 6 is separated and the first step is completed. FIG. 1C shows a state in which the resin body 1 is transferred to the surface of the semiconductor chip and the first step is completed. If necessary in this state, the semiconductor chip is reheated. Next, as a second step, as shown in FIG. 1D, the semiconductor chip on which the resin body is transferred is placed inside a mold 7 having a temperature equal to or lower than the softening point of the resin body, and the resin body is cooled. The molding step is performed, and after the molding is completed, the mold is released from the mold to complete the second step. Finally, the unnecessary portion of the lead frame portion is removed, and a resin-sealed semiconductor device as shown in FIG. 1E is obtained. For industrial mass production, these steps are preferably carried out by sequentially transferring them on the line.

The second aspect of the present invention will be described below. FIG. 2 is a schematic view conceptually showing an example of the sealing process of the second invention. For example, when the semiconductor chip 2 mounted on the semiconductor chip mounting bed 5 which is a part of the lead frame 3 is sealed with the thermoplastic resin composition, first, as a first step, the process shown in FIG. Thus, the resin body 1 made of the thermoplastic resin composition is arranged on the surface of the semiconductor chip 2 (one surface in FIG. 1, and both surfaces of the semiconductor chip as necessary). At this time, the semiconductor chip 2 is heated in advance or the resin body 1
It is preferable that the resin body 2 and the semiconductor chip 1 are temporarily adhered to each other by heating after mounting on the surface of the semiconductor chip 2. This facilitates transportation to the next step on the manufacturing line, and prevents voids and peeling inside the package after sealing. As a heating method, there are methods such as passing through a heating furnace and irradiating with an infrared lamp.

Next, as a second step, as shown in FIG. 1B, the semiconductor chip 2 on which the resin body 1 is arranged is placed inside the mold 7 heated to a temperature equal to or higher than the softening point of the resin body. The resin body 1 is melted. The resin body 1 melts when it comes into contact with a heated mold, and the viscosity thereof is sufficiently lowered, so that the resin body 1 can be molded more finely without damaging the semiconductor chip or the bonding wire. Finally, as a third step, the mold 7 is cooled and molded with the mold closed, and after the molding is completed, the mold 7 is released from the mold, and finally, unnecessary portions of the lead frame portion are removed to obtain the structure shown in FIG. The resin-encapsulated semiconductor device shown can be obtained. For industrial mass production, these steps are preferably carried out by sequentially transferring them on the line.

The third aspect of the present invention will be described below. FIG. 3 is a schematic view conceptually showing an example of the sealing process of the third invention. For example, when the semiconductor chip 2 mounted on the semiconductor chip mounting bed 5 which is a part of the lead frame 3 is sealed with the thermoplastic resin composition, first, as a first step, the process shown in FIG. As described above, the resin body 1 is placed inside the mold 7 which has been heated in advance above the softening point of the resin, and the resin body is softened. Next, as a second step, the mold 7 is arranged so that the softened resin body 1 is arranged on the surface of the semiconductor chip 2 (one surface in FIG. 1, both surfaces of the semiconductor chip as necessary). At this time, it is preferable to heat the semiconductor chip 2 in advance. As a result, the resin body is bonded to the semiconductor chip, and it is possible to prevent the occurrence of voids and peeling inside the package after sealing. As a method for heating the semiconductor chip, there are methods such as passing through a heating furnace and irradiating with an infrared lamp.

FIG. 2B shows a state in which the resin body 2 is placed on the surface of the semiconductor chip 1 and the second step is completed. Next, as a third step, the mold 7 is cooled and molded with the mold closed, and after the molding is completed, the mold 7 is released from the mold to complete the third step. Finally, the unnecessary portion of the lead frame portion is removed to obtain a resin-sealed semiconductor device as shown in FIG. 3 (c). For industrial mass production, these steps are preferably carried out by sequentially transferring them on the line.

The resin body used in the first to third inventions of the present application comprises a thermoplastic resin composition. Invention 1 of the present application
The thermoplastic resin composition according to the third invention preferably uses at least a thermoplastic resin and contains a thermoplastic resin and an inorganic filler as main components. By blending the inorganic filler, it is possible to improve the properties required for the semiconductor encapsulating resin, such as low shrinkage, strength, thermal conductivity and low water absorption.

The thermoplastic resins used in the first to third inventions of the present application are thermoplastics, engineering plastics (engineering plastics), and super engineers depending on the type of semiconductor chip to be sealed and the use of the semiconductor device. It is appropriately selected from plastics (super engineering plastics).

For example, ABS (acrylonitrile butadiene styrene) DAP (diallyl phthalate) resin, D
ATP (diallyl terephthalate) resin, EPE (tetrafluoroethylene hexafluoropropylene perfluorovinyl ether) resin, ETFE (ethylene tetrafluoride ethylene coponomer) resin, EVOH (ethylene vinyl alcohol coponomer) resin, FEP (tetrafluoroethylene hexafluoro) Propylene copolymer) resin, GPPS (general-purpose polystyrene) resin, HDPE (high-density polystyrene) resin, HIPS (high-impact polystyrene) resin, LCP (liquid crystal polymer) resin, LDPE (low-density polystyrene) resin, PA (polyamide) resin , PAEK (polyallyl ether ketone) resin, PAN (polyacrylonitrile) resin, PAR (polyarylate) resin, PAS
(Polyarylene sulfide) resin, PASF (polyallyl sulfone) resin, PBT (polybutylene terephthalate) resin, PC (polycarbonate) resin, PCT
(Poly 1,4 synchrohexane dimethylene terephthalate) resin, PE (polyethylene) resin, PEEK (polyether ether ketone) resin, PEI (polyether imide) resin, PEK (polyether ketone) resin, P
EN (polyethylene naphthalate) resin, PES (polyether sulfone) resin, PET (polyethylene terephthalate) resin, PFA (perfluoroalkoxy fluoropolymer) resin, PKS (polyketone sulfide) resin, PMMA (polymethyl methacrylate) resin, PMP (Polymethylpentene) resin, POM (polyacetal) resin, PP (polypropylene) resin, PP
E (polyphenylene ether resin, PPO (polyphenylene oxide) resin, PPS (polyphenylene sulfide resin, PS (polystyrene) resin, PSF (polysulfone) resin, PTFE (polytetrafluoroethylene) resin, PUR (polyurethane) resin, PVA (polyvinyl alcohol) ) Resin, PVC (polyvinyl chloride) resin, PVDF (polyvinylidene fluoride) resin, PO (phenoxy) resin.

Among these, engineering plastics (PA, POM, P) having excellent heat resistance and heat distortion temperatures of about 100 to 200 ° C.
(BT, PC, PPE, etc.) is preferable from the viewpoint of ensuring the heat resistance and reliability of the semiconductor device after encapsulation, and the heat distortion temperature of the super engineering plastic (P, P, P, etc.) is more excellent and has a heat deformation temperature of about 200 ° C.
PS, LCP, PES, etc.) are more preferable.

As the inorganic filler, various shapes, that is, a crushed shape, a crushed shape with rounded corners, a sub-spherical shape, a spherical shape, a fibrous shape, a flake shape, or a plate-like inorganic filler can be used. Examples of the material of the inorganic filler include silicon oxide, aluminum oxide, antimony oxide, titanium oxide, magnesium oxide, calcium oxide, aluminum nitride, silicon nitride, various glass materials, ceramic materials and the like. Of these, a highly pure silicon oxide material, that is, a powder of fused silica or crystalline silica is preferably used as a filler for semiconductor encapsulation. Further, an inorganic filler having high thermal conductivity, that is, aluminum nitride, silicon nitride, alumina, or the like is used for encapsulating a semiconductor package having high heat generation.

The blending amount of the inorganic filler with respect to the thermoplastic resin depends on the type of thermoplastic resin, the type of inorganic filler,
The amount is preferably 40 wt% to 95 wt% although it varies depending on the size, shape, required characteristics and the like. If it is more than 95 wt%, the viscosity at the time of heating increases and molding becomes difficult, and if it is less than 40 wt%, it becomes difficult to obtain desired properties such as low shrinkability, strength, thermal conductivity and low water absorption.

Further, in the thermoplastic resin composition, in addition to the thermoplastic resin as the main component and the inorganic filler, a suitable wax, a filler surface treatment agent, an adhesion aid, a plasticizer, a flame retardant, a coloring agent, A rubber or elastomer type modifier may be added.

Examples of the releasing agent include hydrocarbon wax, fatty acid wax, fatty acid amide wax, ester wax and the like. As specific examples, from the viewpoint of moisture resistance, carnauba wax, ester waxes such as montan wax are preferable, and stearic acid, palmitic acid, zinc stearate, long-chain carboxylic acids such as calcium stearate and metal salts thereof, Examples thereof include low molecular weight polyethylene wax. These release agents may be used alone or in combination.

As the colorant, a black pigment colorant is desired as a light-shielding agent, and carbon black is particularly preferable. The flame retardant used in the present invention includes halogen-based, phosphorus-based, and inorganic-based flame retardants. Halogen-based flame retardants are mainly classified into bromine-based and chlorine-based flame retardants. The preferred chlorine-based flame retardant is chlorinated paraffin.

Preferred as the inorganic flame retardant are red phosphorus, tin acid, antimony trioxide, zirconium hydroxide, barium metaborate, aluminum hydroxide, magnesium hydroxide, calcium hydroxide, calcium aluminate hydrate. Inorganic flame retardants which are particularly preferably used include antimony trioxide and aluminum hydroxide.

It is desirable that the inorganic filler and the low stress additive used in the present invention have a maximum particle size of 90% or less of the resin thickness on the active surface side of the device after sealing the semiconductor device. If the particles having a particle diameter larger than the resin thickness are used, a force is applied to the semiconductor active surface and the wiring may be cut. Also,
Similarly, regarding the resin body used on the back surface of the element, it is desirable that the maximum particle size is 90% or less of the resin thickness after sealing.

The shape of the resin body used in the first to third aspects of the present invention is preferably a sheet shape. As a result, a thin package having a good appearance can be obtained. Further, the sheet-shaped resin body may be reinforced with various woven fabrics, plate materials and the like.

Typical examples of woven fabric materials include inorganic materials such as glass, quartz, carbon fiber, silicon carbide, silicon nitride,
There are aluminum nitride, alumina, zirconia, potassium titanate fiber, etc., and organic type is nylon type, acrylic type, vinylon type, polyvinyl chloride type, polyester type, aramid type, phenol type, rayon type, acetate type, cotton, hemp. , Silk, wool, etc. These may be used alone or in combination.

As the material of the plate material, metal, ceramics,
Examples include plastic substrates. As a material of the metal material used for the plate material, a material having high thermal conductivity is preferable in consideration of heat dissipation. Examples of metals include iron,
Copper, aluminum, nickel, chrome, zinc, tin,
Examples of alloys of these metals such as silver, gold, lead, magnesium, titanium, zirconia, tungsten, molybdenum, cobalt, stainless steel, 42 nickel-iron alloy, brass, and duralumin. However, when aiming to make the package thinner, it is desirable to use a material that can be processed particularly thin and is lightweight. The resin body used in the present invention can be produced, for example, by the following method. Thermoplastic resin, inorganic filler, and further flame retardant,
The resin sheet can be prepared by crushing, mixing, melting and rolling a colorant, a release agent and other materials, and rolling.

A sheet-shaped resin body can be obtained by cutting the prepared resin sheet into a predetermined size. In the present invention, during compression molding of the semiconductor chip and the sealing resin sheet, the pressure inside the mold may be reduced in order to prevent the generation of voids.

The shape of the die used in the present invention is equal to or slightly larger than the shape of the resin sheet, and the volume of the die is slightly smaller than the total volume of the resin sheets.
It is desirable to use a material in which the resin is pressed during molding. Further, it is desirable to provide the mold with an air bend that releases excess resin when pressure is applied. In addition, the heat capacity of the mold is preferably small in order to efficiently perform cooling and heating.

In the present invention, since the sealing step can be performed in-line, a flexible manufacturing method suitable for high-mix low-volume production is provided. The lead frame or TAB film to which the semiconductor chips are connected is placed on a belt and conveyed, and the sealing resin sheet cut into a predetermined size one by one can be supplied by a magazine method. By this method, sealing can be performed in a continuous process.

[0034]

According to the first to third inventions of the present application, since the thermoplastic resin is used as the sealing resin for the semiconductor chip, the thermosetting resin in which the sealing resin has a long shelf life and the resin body is uncured Since it has sufficient strength compared to, it is easy to handle in production, there is no gas generation from the raw material during curing during molding, no additional heating after molding (after cure) is required,
There are advantages such as easy generation from resin disposal.

Further, according to the first to third inventions of the present application, since the molding is performed by cooling inside the mold, the density of the molded resin is high and the reliability of the mechanical strength performance is high. Also,
High accuracy of external dimensions.

Further, according to the first aspect of the present invention, a resin body made of a thermoplastic resin composition which has been softened in advance in another line is transferred onto the surface of the semiconductor chip, and further the resin body is transferred inside the mold. Since the semiconductor chip is placed and the resin body is cooled and molded, there is no need to place the resin body in the mold, heat the mold, and then cool it. It is possible to shorten the manufacturing cycle by shortening the time required to complete the sealing process without the need for Further, the manufacturing can be performed in-line, and the sealing device can be downsized. According to the second invention and the third invention of the present invention, since the resin body and the semiconductor chip are arranged in the mold preheated in another line, the time for heating the mold on the line is shortened, It is possible to shorten the manufacturing cycle by shortening the time until the sealing step is completed. In addition, it can be in-line and the size of the sealing device can be reduced.

[0037]

EXAMPLES Examples will be described below. An embodiment of the first invention of the present application will be described below. (Embodiment 1) FIG. 1 shows an embodiment 1 which is an embodiment of the present invention.
4A and 4B are process diagrams showing a method for manufacturing a resin-sealed semiconductor device, and FIG. 4 is an external view showing the resin-sealed semiconductor device manufactured according to the first embodiment.

In the first embodiment, the method of manufacturing the resin-sealed semiconductor device according to the present invention is the one-sided resin sealing I
It is configured as a method of manufacturing C or LSI. The resin-encapsulated semiconductor device shown in FIG. 1 includes a semiconductor chip 2, a lead frame 3, a bonding wire 4, and a bed 5 for mounting a semiconductor element, which is a part of the lead frame 3. A semiconductor device including these component parts is included and molded with a sealing resin to manufacture a resin-sealed semiconductor device. Next, the compounding composition of the resin sheet-shaped resin body (hereinafter referred to as “sealing resin sheet”) 1 used in Example 1 and the manufacturing method will be described. The sealing resin sheet 1 contains a thermoplastic resin and an inorganic filler as main components. In Example 1, PPS (polyphenylene sulfide) resin was used as the thermoplastic resin, and fused silica powder was used as the inorganic filler. In this example, a silane coupling agent containing an epoxy group and a natural wax were added to improve the adhesive force between the semiconductor device to be sealed and the sealing resin sheet. The blending ratio was 45% by volume of the main component PPS resin, 54.4% by volume of filler fused silica powder (average particle size 15 μm), and of coupling agent γ-glycidoxytriethoxysilane of 0.
3% by volume, carnauba wax as wax is 0.3
The capacity is%. The sealing resin sheet 1 is a Henschel mixer, a V-type blender, a twin screw extruder,
It was manufactured using a shaft roll machine and a cutter. First, add the blended amount of fused silica powder to a Henschel mixer,
The molten silica powder was floated by stirring, and then liquid γ-glycidoxytriethoxysilane was sprayed on the surface for surface treatment. On the other hand, PPS resin pellets were also placed in a V-type blender, and a blending amount of carnauba wax was added and mixed with stirring. After that, the wax-coated PPS resin pellets and the surface-treated fused silica powder were put into a V-type blender according to the compounding ratio, and further mixed with stirring. Next, the raw materials for the encapsulating resin sheet thus mixed are put into a twin-screw extruder and kneaded and extruded at 350 ° C., and the extrudate is put on a three-axis roll machine at 140 ° C. and simultaneously cooled. Made into a sheet. The resin sheet formed into a sheet was cut into a predetermined weight with a cutter to manufacture a sealing resin sheet 1. Next, a method for manufacturing the single-sided resin-encapsulated semiconductor device of Example 1 will be described.

First, the semiconductor chip 2 mounted on the lead frame 3 is preheated in a dryer at 300 ° C. The preheating is a process necessary for obtaining a stable adhesive force between the semiconductor chip 2 and the sealing resin sheet 1. Next, the flat heating plate 6 treated with carnauba wax is heated to 350 ° C.
After heating, the sealing resin sheet 1 is attached and heated and melted, the molten sealing resin sheet 1 is moved onto the semiconductor chip 2 and attached. Next, the temperature of the sealed product is made constant by heating again in a dryer at 330 ° C. Next, the external shape of the sealing resin attached to the semiconductor element 2 is adjusted and cooled and solidified by using the concave concave mold 7 in which the semiconductor element 2 with one side sealing is heated to 140 ° C. The single-sided resin-encapsulated semiconductor device 9 molded by the cooling concave mold 7 was cut into a predetermined shape by a cutter to evaluate reliability, and then various evaluations were performed.

The reliability evaluation was performed on the pressure cooker test (PCT) and the thermal cycle test (TCT), which are the most important measurement items of the semiconductor device. (Second Embodiment) A second embodiment will be described with reference to FIG. Figure 6
FIG. 4 is an external view showing a double-sided resin-encapsulated semiconductor device manufactured according to a second embodiment.

As the encapsulating resin sheet 1, the same resin sheet as in Example 1 was used. First, as a step 1, the lead frame 3
(5) The semiconductor chip 2 mounted above was preheated between the hot plates 8 (having the heater 11 group) at 300 ° C. Preheating was performed in order to stably obtain the adhesive force between the semiconductor chip 2 and the sealing resin sheet 1. In order to carry out mounting of the sealing resin sheet, melting of the sheet, and attachment of the sheet in the process 2, the rotary roll type sealing resin sheet transfer device 6 was used. The encapsulating resin sheet transfer device 6 is heated to 350 ° C., the encapsulating resin sheet 1 is mounted on the upper part, and after heating and melting, the encapsulating resin sheet 1 melted by rotation is placed on the semiconductor chip 2. It was rotated and transferred to and was attached while tilting from one side.
The surface of the encapsulating resin sheet transfer device 6 was appropriately wax-treated as necessary. Next, in step 3, the temperature of the sealing resin sheet 1 supplied to the next step was adjusted by using the heating device 10 (having the heater 11 group), and the temperature of the sealed product was kept constant. That is, in the heating device 10, heating was performed at 310 ° C. while maintaining the space between the hot plates. Next, in step 4, the semiconductor chip 2 is put into the concave mold 7 for cooling, and the semiconductor chip 2
The outer shape of the encapsulating resin sheet 1 attached to was prepared and cooled and solidified. In step 5, the resin-molded semiconductor device was obtained by removing it from the concave mold 7 for cooling. The molded double-side sealed resin-sealed semiconductor device was cut into a predetermined shape with a cutter to evaluate the reliability, and then evaluated.

The reliability evaluation was performed by the pressure cooker test (PCT) and the thermal cycle test (TCT) as in Example 1. (Embodiment 3) Embodiment 3 will be described with reference to FIG.

As the sealing resin sheet 1, the same resin sheet as in Example 1 was used. First, in step 1, the semiconductor chip 2 mounted on the lead frame 3 was preheated between the hot plates 8 (having the heater 11 group) at 300 ° C. Next, in step 2, the molten encapsulating resin sheet 1 is rotatably transferred onto the semiconductor element 2 by using the rotary roll type encapsulating resin sheet transfer device 6 heated to 350 ° C., while being inclined from one side. I attached it. Next, in step 3, the temperature of the encapsulating resin sheet 1 to be supplied to the next step was adjusted by using the heating device 10 (having the heater 11 group) which maintained the hot plate gap at 310 ° C.
Next, in step 4, the semiconductor chip 2 mounted on the temperature-adjusted lead frame 3 is moved to the double mold 7 heated to 140 ° C. First, the peripheral edge is pressed and then the central mold is pressed. Then, the outer shape of the encapsulating resin sheet 1 attached to the semiconductor chip 2 was adjusted and cooled and solidified.
In step 5, the resin-molded semiconductor device was obtained by removing it from the concave mold 7 for cooling. The molded double-side sealed resin-sealed semiconductor device was cut into a predetermined shape with a cutter to evaluate the reliability, and then evaluated.

The reliability evaluation was performed by the pressure cooker test (PCT) and the thermal cycle test (TCT) as in Example 1. (Embodiment 4) Hereinafter, a method of manufacturing a resin-sealed semiconductor device of Embodiment 4 will be described.

As the encapsulating resin sheet 1, the same resin sheet as in Example 1 was used. FIG. 8 shows the structure of a method of manufacturing a resin-sealed semiconductor device according to this example. FIG. 9 is an external view showing a TAB type resin-sealed semiconductor device manufactured according to the fourth embodiment. The TAB tape 31 shown in FIG. 8 is used. The TAB tape 31 is formed with a metal thin film wiring 32 that also serves as a connection lead and an external terminal, and the connection lead portion of the metal thin film wiring 32 is connected to the semiconductor chip 2 via a bump or the like. In this way, the semiconductor chip 2 group mounted on the long TAB tape 31 is resin-sealed according to the process shown in FIG. The resin-sealed semiconductor device is manufactured.

The reliability evaluation was performed by the pressure cooker test (PCT) and the thermal cycle test (TCT) as in Example 1. (Embodiment 5) Hereinafter, a method of manufacturing a resin-sealed semiconductor device of Embodiment 5 will be described.

A method of manufacturing the resin-sealed semiconductor device according to this embodiment will be described with reference to FIG. Sealing Resin Sheet 1 The same resin sheet as in Example 1 was used. In Example 5, the encapsulating resin sheet was used by adhering it to the silicone resin-coated metal release sheet 13. The manufacturing apparatus shown in FIG. 10 includes a supply roll 14, a winding roll 15, a preheating furnace 16, a sticking furnace 17, a sticking roll 18, a heating and stabilizing furnace 19, and a cooling belt 20.

Each step of Example 5 will be described. First, the encapsulating resin sheet 1 attached to the silicone resin-coated metallic release sheet 13 is preheated in a preheating furnace 16 heated to 330 ° C. On the other hand, the semiconductor chip 2 mounted on the lead frame 3 is also preheated to 300 ° C. in the preheating furnace 21. next,
The heat-melted sealing resin sheet on the release sheet is pressure-bonded onto the semiconductor chip 2 using the high-temperature roll 18. The semiconductor chip 2 on which the sealing resin sheet 1 stuck by pressure is placed
The temperature is kept constant by heating in the heating stabilizing furnace 19 heated to 10 ° C. Next, the semiconductor chip 2 is transferred to the cooling roll 20 heated to 130 ° C. and is molded by cooling. The cooling roll has a recess formed on its surface as a mold for molding the resin sheet. The surface-mounted resin-encapsulated semiconductor device thus molded was evaluated by cutting it into a predetermined shape with a cutter in order to evaluate the reliability.

The reliability evaluation was performed by the pressure cooker test (PCT) and the thermal cycle test (TCT) as in Example 1. (Embodiment 6) Hereinafter, a method of manufacturing a resin-sealed semiconductor device of Embodiment 6 will be described.

First, the compounding composition and manufacturing method of the encapsulating resin sheet 1 used in Example 6 will be described. Sealing resin sheet 1
Is mainly composed of a thermoplastic resin and an inorganic filler. In Example 1, a phenoxy resin was used as the thermoplastic resin, and fused silica powder was used as the inorganic filler. In this example, a silane coupling agent containing an epoxy group and a natural wax were added to improve the adhesive force between the semiconductor device to be sealed and the sealing resin sheet. The compounding ratio is 43% by volume of the phenoxy resin as the main component and 5% by volume of the fused silica powder (average particle size 15 μm) as the filler.
2.4% by volume, sealing resin sheet 1 containing 0.3% by volume of γ-glycidoxytriethoxysilane as a coupling agent and 0.3% by volume of carnauba wax as a wax
Was manufactured using a Henschel mixer, a V-type blender, a twin screw extruder, a triple roll machine, and a cutter. First, a blended amount of fused silica powder was put into a Henschel mixer, and the fused silica powder was floated by stirring, and then liquid γ-glycidoxytriethoxysilane was sprayed to perform surface treatment. On the other hand, the phenix resin pellets were also charged into a V-type blender, and a blending amount of carnauba wax was added and mixed with stirring. After that, the wax-coated phenoxy resin pellets and the surface-treated fused silica powder were put into a V-type blender according to the compounding ratio, and further mixed with stirring. Next, the raw materials for the encapsulating resin sheet thus mixed are put into a twin-screw extruder, and 350
The mixture was kneaded and extruded at 0 ° C., and the extruded product was placed on a triaxial roll machine at 120 ° C. and cooled to form a sheet. The resin formed into a sheet was cut into a predetermined weight with a cutter to manufacture a sealing resin sheet 1.

The method of manufacturing a resin-sealed semiconductor device according to the sixth embodiment is the same as that of the third embodiment except that the resin sheet containing phenoxy resin as a main component is used as the sealing resin sheet 1. A semiconductor device was manufactured.

The reliability evaluation was performed by the pressure cooker test (PCT) and the thermal cycle test (TCT) as in Example 1. (Embodiment 7) Hereinafter, a method of manufacturing a resin-sealed semiconductor device of Embodiment 7 will be described.

In the method for manufacturing a resin-encapsulated semiconductor device according to Example 7, a liquid γ-glycidoxytriethoxysilane was used as an adhesive property-improving measure in advance on the surface of the encapsulating resin sheet 1 in contact with the element. Example 3 is the same as Example 3 except that the one coated with was used. The application was performed by spraying the γ-glycidoxytriethoxysilane liquid on one surface of the sealing resin sheet 1 before cutting for 1 second. The adhered amount was about 0.02%.

The reliability evaluation was performed by the pressure cooker test (PCT) and the thermal cycle test (TCT) as in Example 1. Comparative Example 1 FIG. 11 is a process diagram of Comparative Example 1. A lead frame 3 to which the semiconductor chip 2 is bonded on the substrate 8.
(5) Mount the encapsulating resin sheet 1 used in Example 1 (FIG. 11 (a)) and put it in a dryer at 350 ° C. for 10
After heating for one minute (FIG. 16B), the product was taken out and naturally cooled to manufacture a single-sided resin-sealed semiconductor device.
(FIG. 11C) For the evaluation of reliability, a pressure cooker test (PCT) and a thermal cycle test were performed using the test element as in Example 1. Comparative Example 2 FIG. 12 is a process diagram of Comparative Example 2. A lead frame 3 to which the semiconductor chip 2 is bonded on the substrate 8.
(5) The encapsulating resin sheet 1 used in Example 1 was mounted on the above, placed in a dryer at 350 ° C., heated for 10 minutes, taken out, and naturally cooled. The one-side sealed resin-sealed semiconductor element naturally cooled is inverted, and the sealing resin sheet 1 is heat-bonded on the flat plate 8 coated with the fluororesin 22 by the same method as described above (FIG. 12 (c)). ), The backside of the semiconductor element 2 was resin-sealed to manufacture a double-sided resin-sealed semiconductor device. (FIG. 11D) For the reliability evaluation, a pressure cooker test (PCT) and a thermal cycle test were performed using the test element as in Example 1. (Comparative Example 3) A resin-encapsulated semiconductor device of double-sided encapsulation is performed through the same steps as in Comparative Example 2 except that the back surface side of the semiconductor element 2 is resin-encapsulated and then the back surface side is resin-encapsulated. Was produced. For the reliability evaluation, a pressure cooker test (PCT) and a thermal cycle test were performed using the test element as in Example 1. Comparative Example 4 FIG. 13 is a process diagram of Comparative Example 4. On the flat plate 8 coated with the fluororesin 33, the sealing resin sheet 1,
The lead frame 3 (5) to which the semiconductor chip 2 is bonded and the encapsulating resin sheet 1 are mounted in this order (FIG. 12A, 350 ° C.).
In the dryer, heated for 10 minutes, taken out, and naturally cooled (FIG. 13B) to fabricate a resin-sealed semiconductor device with double-sided sealing. (FIG. 13C) Evaluation of reliability Was subjected to a pressure cooker test (PCT) and a thermal cycle test using the same test element as in Example 1. (Comparative Example 5) Fig. 14 is a process chart of Comparative Example 5. A flat plate coated with a fluororesin 33. 8, the sealing resin sheet 1,
The lead frame 3 (5) to which the semiconductor chip 2 is bonded and the encapsulating resin sheet 1 are mounted in this order (FIG. 14A, 350 ° C.).
After heating for 10 minutes, the concave flat plate 7 coated with the fluororesin is heated to 120 ° C. and pressed to seal (FIG. 14 (c)), taken out and naturally cooled to seal both sides. A resin-encapsulated semiconductor device was manufactured. (FIG. 14 (d) For the reliability evaluation, a pressure cooker test (PCT) and a thermal cycle test were performed using the test element as in the first embodiment. Table 1 shows the results of appearance and cross-section observation.

[0055]

[Table 1]

As shown in Table 1, as a result of reliability, appearance and cross-section observation, the resin-encapsulated semiconductor devices obtained in Examples 1 to 7 have excellent reliability and appearance in comparison with Comparative Examples.

Further, in the method of manufacturing the resin-encapsulated semiconductor device of Examples 1 to 7, it is not necessary to raise or lower the temperature of the mold, the time until solidification molding can be shortened, and the manufacturing cycle can be shortened. Can be shortened.

Next, an embodiment of the second invention of the present application will be described below. (Example 8) First, a sheet-shaped resin body (hereinafter referred to as a "sealing resin sheet") was prepared. The sealing resin sheet is
The main component is a thermoplastic resin and an inorganic filler. In Example 8, PPS (polyphenylene sulfide) resin was used as the thermoplastic resin, and fused silica powder was used as the inorganic filler. Further, a silane coupling agent containing an epoxy group and a natural wax were added to improve the adhesive strength between the encapsulating resin sheet and the semiconductor device. The blending ratio was 45 vol% for the PPS resin as the main ingredient and 5 for the fused silica powder (average particle size 15 μm) as the filler.
4.4 vol%, γ-glycidoxytriethoxysilane which is a coupling agent is 0.3 vol%, and carnauba wax which is a wax is 0.3 vol%. The encapsulating resin sheet was produced using a Henschel mixer, a V-type blender, a biaxial screw extruder, a triaxial roll machine, and a cutter. First, a blended amount of fused silica powder was put into a Henschel mixer, and the fused silica powder was floated by stirring, and then liquid γ-glycidoxytriethoxysilane was sprayed for surface treatment. On the other hand, PPS resin pellets were also placed in a V-type blender, and a blended amount of carnauba wax was added and mixed with stirring. After that, the wax-coated PPS resin pellets and the surface-treated fused silica powder were charged into a V-type blender according to the compounding ratio, and further mixed with stirring. Next, the raw materials for the encapsulating resin sheet thus mixed are put into a twin-screw extruder and 350 ° C.
The mixture was kneaded and extruded by using a 3 axis roll machine at 140 ° C. to cool and form a sheet. The resin sheet formed into a sheet was cut into a predetermined size with a cutter to manufacture a sealing resin sheet.

Next, as shown in FIG. 15, the sealing resin sheet 1 supplied from the magazine 22 is temporarily fixed to the semiconductor chip 2. As a temporary fixing method, after mounting the resin sheet 1 on the semiconductor chip 2, the infrared lamp 29 irradiates infrared rays to melt and adhere the resin.

In order to temporarily fix the resin sheet 1 ′ to the back surface of the element, the TAB tape 31 is inverted and the sealing resin sheet 1
Put ´ and irradiate infrared rays further. Next, the semiconductor chip to which the resin sheets 1 and 1'are temporarily fixed is sent to the manufacturing line shown in FIG. 16 and sealed by a mold 25 heated to 350.degree.
It is sealed by 26. The mold used had the structure shown in FIG. A detailed view of the mold is shown in FIG. As shown in FIG. 17, the die has a structure in which the outer die 27 is clogged to prevent burrs from being generated, and then the inner die 28 is pressed to perform molding. After that, the mold is not opened even after the package is molded, and the mold is put into the cooling unit 23 and cooled. The cooling method is water cooling. The mold cooled to the softening point temperature or lower is opened, and the resin-sealed semiconductor device 9 is taken out. After taking out the package, the mold is heated again at 350 ° C. in the heating furnace 24 for molding the next package. (Example 9) As the sealing resin sheet, the same sheet as that used in Example 8 was used.

First, as shown in FIG. 18, the semiconductor chip 2
Then, the sealing resin sheet 1 supplied from the magazine 22 is temporarily fixed. As a temporary fixing method, after the resin sheet 1 is placed on the semiconductor chip 2, the resin is melted and adhered in the heating furnace 30.

In order to temporarily fix the encapsulating resin sheet 1 ′ on the back surface of the element, the TAB tape 31 is inverted and the encapsulating resin sheet 1 ′ is placed, and further melted in the heating furnace 30. Next, the element in which the resin sheet was temporarily fixed was sent to the manufacturing line shown in FIG. 16, and a package was formed in the same manner as in Example 8. (Example 10) First, a sheet-shaped resin body (hereinafter referred to as a "sealing resin sheet"). The sealing resin sheet contains a thermoplastic resin and an inorganic filler as main components. In Example 10, a phenoxy resin was used as the thermoplastic resin, and fused silica powder was used as the inorganic filler. Further, a silane coupling agent containing an epoxy group and a natural wax were added to improve the adhesive strength between the encapsulating resin sheet and the semiconductor device. The compounding ratio was 43 vol% for the PPS resin as the main ingredient and 52.4 v for the fused silica powder (average particle size 15 μm) as the filler.
%, γ-glycidoxytriethoxysilane as a coupling agent is 0.3 vol%, and carnauba wax as a wax is 0.3 vol%. The sealing resin sheet is
It was manufactured using a Henschel mixer, a V-type blender, a twin-screw extruder, a triple-screw roll machine, and a cutter. First, a blended amount of fused silica powder was put into a Henschel mixer, and the fused silica powder was floated by stirring, and then liquid γ-glycidoxytriethoxysilane was sprayed for surface treatment. On the other hand, the PPS resin pellets were also put into a V-type blender, and a blending amount of carba wax was added and mixed with stirring. After that, wax coated PP
The S resin pellets and the surface-treated fused silica powder were put into a V-type blender according to the compounding ratio, and further mixed with stirring. Next, the raw materials for the encapsulating resin sheet thus mixed are put into a twin-screw extruder, kneaded and extruded at 350 ° C., and the extrudate is cooled into a sheet at the same time by being cooled on a three-axis roll machine at 140 ° C. did. The resin sheet formed into a sheet was cut into a predetermined size with a cutter to manufacture a sealing resin sheet.

First, as shown in FIG. 15, the semiconductor chip 2
The resin sheet 1 supplied from the magazine 22 is temporarily fixed. In the temporary fixing method, after the resin sheet 1 is placed on the semiconductor chip 2, infrared rays are radiated by the infrared lamp 29 to melt and adhere the resin. Further, in order to temporarily fix the encapsulating resin sheet 1 ′ on the back surface of the semiconductor chip 2, the TAB tape 31 is inverted and the encapsulating resin sheet 1 ′ is placed, and further infrared rays are irradiated. Further, sent to the step shown in FIG. 19, the semiconductor chip 2 to which the resin sheets 1 and 1 ′ are temporarily fixed is sealed by the belt-shaped mold 21 heated to 350 ° C. Even after the package is molded, the belt-shaped mold 21 is not opened, and the entire mold is put in the cooling unit 23 to be cooled. The belt-shaped mold 21 can be easily cooled if its heat capacity is very small. The cooling method is an air cooling method in which air is blown by a fan. Then, the mold cooled to the softening temperature or lower is opened, and the resin-sealed semiconductor device 9 is taken out. The belt-shaped mold after taking out the package is heated again to 350 ° C. in the heating furnace 24 for molding the next package.

Next, an embodiment of the third invention of the present application will be shown. (Example 11) First, a resin sheet similar to the sealing resin sheet prepared in Example 8 was prepared.

Next, as shown in FIG. 20, the resin sheets 1, 1'supplied by the magazine 22 are attached to the dies 25, 26 heated to 350.degree. The resin sheet is melted by the heat of the mold and adheres. Next, the mold to which the resin sheet is attached rotates to seal the semiconductor chip 2 on the lead frame 3. A detailed view of the mold is shown in FIG. The outer die 27 prevents clogging and the inner die 28 then applies pressure to perform molding. Even after the molding of the package, the mold was not opened, but the mold was put into the cooling unit 23 and cooled. The cooling method is a water cooling method. Then, the mold cooled to the softening temperature or lower is opened, and the resin-sealed semiconductor device 9 is taken out. After taking out the package, the mold is heated again to 350 ° C. in the heating furnace 24 for molding the next package. (Example 12) First, a resin sheet similar to the encapsulating resin sheet prepared in Example 10 was prepared.

Next, as shown in FIG. 2, the resin sheets 1, 1'supplied by the magazine 22 are attached to the belt-shaped mold 21 heated to 350.degree. The resin sheets 1 and 1 ′ are melted by the heat of the belt-shaped mold 21 and adhere to each other. Next, the mold to which the resin sheets 1 and 1'are attached is rotated to rotate the lead frame 3
The upper semiconductor chip 2 is sealed. Even after the package is molded, the belt-shaped mold 21 is not opened, and the entire mold is put in the cooling unit 23 to be cooled. Since the belt-shaped mold 21 has a very small heat capacity, it can be easily cooled. The cooling method is an air cooling method in which air is blown by a fan. Then, the mold cooled to the softening temperature or lower is opened, and the resin-sealed semiconductor device 9 is taken out. After taking out the package, the mold is heated again to 350 ° C. in the heating furnace 24 for molding the next package. (Comparative Example 6) A resin sheet similar to the encapsulating resin sheet of Example 8 was placed on a lead frame on which a semiconductor chip was mounted, placed in a heating furnace at 350 ° C., taken out after heating, and then the semiconductor chip was inverted. Further, after placing the encapsulating resin sheet in the dryer, the semiconductor chip was taken out and naturally cooled to obtain a resin-encapsulated semiconductor device. (Comparative Example 7) A resin sheet similar to the sealing resin sheet of Example 8 was placed on a TAB tape having a semiconductor chip mounted thereon,
Put in a dryer at 350 ° C and take out after heating, then invert the semiconductor element, put a sealing resin sheet on it, put in a heating furnace, take out the element, and then cool the two flat plates coated with fluorine resin. A package was formed by pressing in between to obtain a resin-sealed semiconductor device.

The above Examples 8 to 12 and Comparative Examples 6 and 7
The resin-sealed semiconductor device molded in 1. was subjected to the following reliability test, and the results are shown in Table 2. (1) Moisture resistance reliability test The created package was left in a pressure cooker at 127 ° C. and 2.5 atmospheric pressure for 100 to 1000 hours, and then the failure rate was checked by checking the operation of the device. (2) A thermal cycle test (TCT) was performed.

The prepared package is -65 ° C. to room temperature to 1
Cooling / heating cycle with 50 ° C. as one cycle is 100 to 10
The cycle of 00 cycles was repeated to check the defect occurrence rate by checking the operation of the device. (3) Appearance Visual observation

[0069]

[Table 2]

As is clear from Table 2, as a result of reliability and appearance observation, the resin-sealed semiconductor devices obtained in Examples 8 to 12 have excellent reliability and appearance shape as compared with the comparative example. Further, in the resin-encapsulated semiconductor devices of Examples 8 to 12, the resin body is softened by using the mold previously heated in another line, so that the time for melting the resin body can be shortened and the manufacturing cycle can be shortened.

[0071]

As described above, according to the present invention, it is possible to provide a resin-sealed semiconductor device which can be shortened in manufacturing cycle and which is excellent in reliability and appearance.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing steps of a method for manufacturing a resin-encapsulated semiconductor device of the present invention.

FIG. 2 is a schematic view showing steps of a method for manufacturing a resin-sealed semiconductor device of the present invention.

FIG. 3 is a schematic view showing steps of a method for manufacturing a resin-encapsulated semiconductor device of the present invention.

FIG. 4 is an external view showing a resin-sealed semiconductor device manufactured according to the first embodiment.

5A to 5C are schematic views showing steps of a method of manufacturing a resin-sealed semiconductor device according to a second embodiment.

FIG. 6 is an external view showing a resin-sealed semiconductor device manufactured according to a second embodiment.

7A to 7C are schematic views showing steps of a method of manufacturing a resin-sealed semiconductor device according to a third embodiment.

FIG. 8 is a schematic diagram showing the steps of a method for manufacturing a resin-encapsulated semiconductor device of Example 4.

FIG. 9 is an external view showing a resin-sealed semiconductor device manufactured according to a fourth embodiment.

FIG. 10 is a schematic diagram showing the steps of a method of manufacturing a resin-sealed semiconductor device according to a fifth embodiment.

FIG. 11 is a schematic view showing steps of a method for manufacturing a resin-encapsulated semiconductor device of Comparative Example 1.

FIG. 12 is a schematic view showing steps of a method for manufacturing a resin-sealed semiconductor device of Comparative Example 2.

FIG. 13 is a schematic diagram showing steps of a method for manufacturing a resin-sealed semiconductor device of Comparative Example 4.

FIG. 14 is a schematic diagram showing steps of a method for manufacturing a resin-encapsulated semiconductor device of Comparative Example 5.

FIG. 15 is a schematic diagram showing the steps of a method of manufacturing a resin-encapsulated semiconductor device of Example 8.

FIG. 16 is a schematic diagram showing the steps of a method of manufacturing a resin-encapsulated semiconductor device of Example 8.

FIG. 17 is a sectional view showing a mechanism of a mold according to an eighth embodiment.

FIG. 18 is a schematic view showing a method of manufacturing the resin-sealed semiconductor device of Example 9.

FIG. 19 is a schematic view showing a method of manufacturing a resin-encapsulated semiconductor device of Example 10.

FIG. 20 is a schematic view showing a method of manufacturing a resin-sealed semiconductor device of Example 11.

FIG. 21 is a schematic view showing a method of manufacturing the resin-sealed semiconductor device of Example 12.

[Explanation of symbols]

 1, 1'resin body (sealing resin sheet) 2 semiconductor chip 3 lead frame 4 wire bonding 5 semiconductor chip mounting bed 6 heating plate (transfer device) 7 type 8 heating plate 9 resin sealing type semiconductor device 10 heating device 11 Heater 12 Heater 13 Release Sheet 14 Supply Roll 15 Winding Roll 16 Preliminary Furnace 17 Sticking Furnace 18 Sticking Roll 19 Heating Stabilizing Furnace 20 Cooling Belt 21 Belted Mold 22 Magazine 23 Cooling Part 24 Heating Furnace 25 Gold Mold 26 Mold 27 Outer mold 28 Inner mold 29 Heating lamp 30 Heating furnace 31 TAB tape 32 Metal thin film wiring 33 Fluororesin coating

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Akira Zenzumi 1 Komukai Toshiba-cho, Sachi-ku, Kawasaki-shi, Kanagawa Prefectural Research & Development Center, Toshiba (72) Inventor Masaki Adachi Shinisogo-cho, Isogo-ku, Yokohama-shi, Kanagawa No. 33 Incorporated company Toshiba Production Engineering Laboratory

Claims (3)

[Claims] 1. A step of transferring a resin body made of a softened thermoplastic resin composition to one side or both sides of a semiconductor chip, and disposing the semiconductor chip having the resin body transferred inside a mold and cooling the resin body. And a step of forming the semiconductor chip, and the semiconductor chip is resin-sealed. 2. A step of disposing a resin body made of a thermoplastic resin composition on one side or both sides of a semiconductor chip, and a semiconductor chip in which the resin body is disposed in advance inside a mold which has been heated above the softening point of the resin. Resin encapsulation characterized by sequentially performing a step of arranging and softening the resin body to fill the inside of the mold with the resin body, and a step of cooling the mold to mold the resin body and seal the semiconductor chip. Type semiconductor device manufacturing method. 3. A step of arranging a resin body made of a thermoplastic resin composition inside a mold which has been heated above the softening point of the resin to soften the resin body, and the softened resin body is on one side of the semiconductor chip or A method of manufacturing a resin-encapsulated semiconductor device, which comprises sequentially performing a step of disposing a mold so as to be arranged on both sides and a step of molding a resin body by cooling the mold to seal a semiconductor chip.