JPH08236835A - Magnetoelectric conversion element and its manufacture - Google Patents

Abstract

PURPOSE: To prevent permeation of water and salts contained in water into a magnetic sensing part from a board, by forming a magnetic sensing part having magnetoresistance effect and connection electrodes on the board, and forming a shielding film on the board of an electromagnetic conversion element wherein the magnetic sensing part and the connection electrodes are covered with a protective film. CONSTITUTION: Magnetic material boards 8a, 8b wherein shielding films 13 composed of silicon compound using silanol resin on the surface are formed are stuck on both surfaces of a mica board 1 by using resin layers 7, 7. Connection electrodes 5, 5 which are exposed on the end surfaces are connected with outer connection electrodes 9, 9. The shielding films can be formed also by using organic material selected from polyimide resin or the like or inorganic material selected from silicon oxide or the like. The resin is dense and can prevent the permeation of water and salts contained in water into a magnetic sensing part from the board.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a magnetoelectric conversion element, especially In
The present invention relates to a magnetoelectric conversion element having a magnetic sensitive section made of Sb and a method for manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, a magnetoelectric conversion element for converting a change in magnetic field into a change in electric resistance has been put into practical use as a length measuring element, a rotation angle detecting element, and the like. Such an element has a structure in which a magnetic sensing portion exhibiting a magnetoresistive effect is formed on a magnetic substrate, and a connecting electrode for extracting a change in electric resistance value is formed on the magnetic sensing portion.

A conventional magnetoelectric conversion element 60 will be described with reference to the sectional view of FIG. 7 and the plan view of FIG. Note that FIG. 8 corresponds to FIG.
It is a figure which shows the inside when it cut | disconnects by the AA line shown in FIG.

In the figure, the magnetoelectric conversion element 60 includes a magnetoresistive element pattern 4 formed on the mica substrate 1, connection electrodes 5 and 5 together with a protective film 6, and resin layers 7 and 7 to form a magnetic substrate 8a. , 8b, and external connection electrodes 9, 9 are formed on the end faces. Below, the magnetoelectric conversion element 60
The structure of will be described in detail.

The magnetoresistive element pattern 4 has a magnetic sensitive section 2a having a meander line shape and made of InSb, and a magnetic sensitive section 2
a short bar-3a. ． ． 3a
Have a structure formed on the mica substrate 1. At both ends of the magnetoresistive element pattern 4, on the electrode films 2b and 2b made of InSb film, a conductive film 3 made of Al and Ti is formed.
The connection electrodes 5 and 5 on which b and 3b are formed are connected. Short bar-3a. ． ． 3a is formed on the folded-back portion of the magnetic sensitive portion 2a and at several places in the middle so as to act as an electrically conductive thin film. This short bar-3
a. ． ． 3a and the conductive films 3b and 3b have an upper layer of A
It has a two-layer structure in which the lower layer is Ti and the lower layer is Ti, and is formed by a vacuum deposition method and photolithography.
Furthermore, the magnetoresistive element pattern 4 and the connecting electrodes 5, 5
A protective film 6 for protecting the and is covered by sputtering or SOG (spin on glass) method. As the material used for the protective film 6, silica, alumina, silicon nitride, aluminum nitride, or the like having a thermal expansion coefficient substantially equal to that of InSb is used. A magnetic substrate 8a is adhered to the protective film 6 and a magnetic substrate 8b is adhered to the mica substrate 1 by a resin layer 7. Furthermore, external connection electrodes 9 and 9 are formed of an electrode material so as to be electrically connected to the connection electrodes 5 and 5.

In order to protect from the external environment, the exterior resin 10 may be applied to almost the entire portion of the magnetoelectric conversion element 60 excluding the external connection electrodes 9, 9.

[0007]

When the conventional magneto-electric conversion element is used for a long time, water or salts contained in the water penetrates into the magnetic sensing part through the magnetic substrate which is a component thereof. , Peeling the magnetic sensitive part from the magnetic substrate,
Alternatively, the magnetic sensing part and the internal electrodes may be corroded. In the conventional magnetoelectric conversion element, in order to prevent such a problem, resin is applied to almost the entire magnetoelectric conversion element except for the external connection electrode, or a ceramic or stainless steel It was necessary to seal and store in a metal container. As a result, there is a problem that the magnetoelectric conversion element becomes large and the distance between the magnet used with the magnetic sensing part and the magnetic sensitive part becomes large, so that the sensitivity is lowered.

[0008]

The present invention has been made in order to solve the above problems, and provides a magnetoelectric conversion element excellent in moisture resistance by using a substrate having a shielding film formed thereon. .

The magnetoelectric conversion element according to claim 1 of the present invention is
In a magnetoelectric conversion element in which a magnetic sensitive portion having a magnetoresistive effect and a connecting electrode are formed on a substrate, and the magnetic sensitive portion and the connecting electrode are covered with a protective film, a shield film is formed on the substrate. Characterize.

The magnetoelectric conversion element according to claim 2 of the present invention is
The shielding film is formed of an organic material selected from a silanol resin, a polyimide resin, an acrylic resin, and a phenol resin.

The magnetoelectric conversion element according to claim 3 of the present invention is
The shielding film is a polycrystalline thin film formed of any one of silicon oxide, aluminum oxide and silicon nitride, or an amorphous thin film formed of any of lead borate, borosilicate, aluminum borate and alkali lead borate. It is characterized by being formed of an inorganic material.

The magnetoelectric conversion element according to claim 4 of the present invention is
The shielding film is an organic shielding film formed of any one of silanol resin, polyimide resin, acrylic resin, and phenol resin, and a polycrystalline thin film formed of any one of silicon oxide, aluminum oxide, and silicon nitride. Or an inorganic shielding film that is an amorphous thin film formed of any of lead borate, borosilicate, aluminum borate, and alkali lead borate.

According to a fifth aspect of the present invention, in a method of manufacturing a magnetoelectric conversion element, a magnetic sensitive portion having a magnetoresistive effect and a connecting electrode are formed on a substrate, and the magnetic sensitive portion and the connecting electrode are protected by a protective film. The method for producing a magnetoelectric conversion element coated with 1. includes a step of forming a shielding film on a substrate.

In the method of manufacturing a magnetoelectric conversion element according to a sixth aspect of the present invention, the shielding film is made of a polycrystalline thin film selected from silicon oxide, aluminum oxide, and silicon nitride, and sputtering, PVD, CVD, Evaporation, SO
It is characterized by being formed by a method selected from any of G (spin on glass) method.

In the method of manufacturing a magnetoelectric conversion element according to a seventh aspect of the present invention, the shielding film is an amorphous thin film selected from any of lead borate, borosilicate, aluminum borate, and alkali lead borate. It is characterized in that it is formed by applying it to a substrate and further heat-treating it.

[0016]

In the magneto-electric conversion element according to the first aspect of the present invention, since the shielding film is formed on the substrate, it is possible to prevent water or salts contained in the water from entering the magnetically sensitive portion from the substrate.

According to another aspect of the magnetoelectric conversion element of the present invention, the shielding film is formed of a dense organic material selected from silanol resin, polyimide resin, acrylic resin and phenol resin. It is possible to reliably prevent water or salts contained in water from entering the magnetically sensitive portion from the substrate.

According to a third aspect of the magnetoelectric conversion element, the shielding film is a polycrystalline thin film formed of silicon oxide, aluminum oxide or silicon nitride, or lead borate,
Since it is made of an inorganic material consisting of an amorphous thin film made of borosilicate, aluminum borate, or alkali lead borate, water or salts contained in water penetrates the magnetic sensitive part from the magnetic substrate. Things can be reliably prevented.

According to a fourth aspect of the magnetoelectric conversion element of the present invention, the shielding film is an organic shielding film formed of any one of silanol resin, polyimide resin, acrylic resin and phenol resin, and silicon oxide and aluminum oxide. , A polycrystalline thin film formed of any one of silicon nitride or an inorganic shielding film which is an amorphous thin film formed of any of lead borate, borosilicate, aluminum borate and alkali lead borate Therefore, it is possible to more reliably prevent water or salts contained in water from entering the magnetically sensitive portion from the substrate.

According to a fifth aspect of the present invention, in a method of manufacturing a magnetoelectric conversion element, a substrate is provided with a magnetic sensitive portion having a magnetoresistive effect and a connection electrode, and the magnetic sensitive portion and the connection electrode are covered with a protective film. In the method of manufacturing a magnetoelectric conversion element, which includes the step of forming a shielding film on a substrate, a magnetoelectric conversion device having a shielding film that reliably prevents water or salts contained in water from entering the magnetically sensitive portion from the substrate. The device can be manufactured.

According to a sixth aspect of the present invention, there is provided a method of manufacturing a magnetoelectric conversion element, wherein the shielding film is made of a polycrystalline thin film selected from silicon oxide, aluminum oxide and silicon nitride.
Since it is formed by any one of the sputtering, PVD, CVD, vapor deposition, and SOG (spin on glass) methods, it has a shielding film that surely prevents water or salts contained in water from entering the magnetic sensing part from the substrate. A magnetoelectric conversion element can be manufactured.

According to a seventh aspect of the present invention, in the method of manufacturing a magnetoelectric conversion element, the shielding film is made of an amorphous thin film selected from lead borate, borosilicate, aluminum borate, and alkaline lead borate, and is applied to a substrate. Further, since it is formed by further heat treatment, it is possible to manufacture a magnetoelectric conversion element having a shielding film that surely prevents water or salts contained in water from penetrating from the substrate to the magnetic sensing part.

[0023]

【Example】

(Embodiment 1) A magnetoelectric conversion element 20 according to an embodiment of the present invention will be described with reference to FIGS. FIG. 1 shows a magnetoelectric conversion element 20.
2 is a sectional view of the magnetoelectric conversion element 20 shown in FIG.
FIG. 3 is a plan view when the magnetoelectric conversion element 20 is cut along with FIG. The plan view of FIG. 2 is almost the same as the conventional example. In the following description, the same parts as those in the conventional example are designated by the same reference numerals, and the description thereof will be omitted.

The magnetoelectric conversion element 20 comprises a mica substrate 1 and a magnetic sensitive portion 2 made of an InSb film having a meander line shape.
a and a plurality of short bars 3a. ． ． 3a, a magnetoresistive element pattern 4 and two layers which are electrically connected to both ends of the magnetoresistive element pattern 4 and include electrode films 2b and 2b and conductive films 3b and 3b. The connection electrodes 5 and 5 and the protective film 6 for protecting the magnetoresistive element pattern 4 and the connection electrodes 5 and 5 were formed, and the shielding films 13 were formed on both surfaces of the mica substrate 1. The magnetic substrate 8a, 8b is the resin layer 7,
7 has a structure in which external connection electrodes 9 and 9 are connected to the connection electrodes 5 and 5 which are bonded to each other and exposed at the end faces.

A method of manufacturing the magnetoelectric conversion element 20 having the above structure will be described in the order of steps with reference to FIG. First, as shown in FIG. 3A, the InSb film 11 is formed on the mica substrate 1 by the vapor deposition method by the three-temperature method. Next, as shown in FIG. 3B, the InSb film 11 is patterned into a meander line shape by photolithography to form the magnetic sensitive portion 2a and the electrode films 2b and 2b. Next, as shown in FIG. 3C, an electrically conductive thin film is formed by a vacuum deposition method with Al as an upper layer and Ti as a lower layer on the surface on which the magnetic sensing portion 2a and the electrode films 2b, 2b are formed. Which acts as an electrically conductive thin film, a short bar-3a. ． ． 3a and conductive film 3
Patterns b and 3b are simultaneously formed by photolithography. Magnetically sensitive portion 2a and short bar-3a. ． ．
The magnetoresistive element pattern 4 is formed by 3a, and the connection electrodes 5, 5 are formed by the electrode films 2b, 2b and the conductive films 3b, 3b.
Is formed. Furthermore, as shown in FIG. 3 (4),
A protective film 6 for protecting the magnetoresistive element pattern 4 and the connection electrodes 5 and 5 is formed by sputtering or SOG (spin on glass) method. Note that the material used for the protective film 6 may be silica, alumina, silicon nitride, aluminum nitride, or the like having a coefficient of thermal expansion substantially equal to that of InSb. Next, as shown in FIG.
The magnetic substrate 8a on which the shielding film 13 is formed in advance is adhered to the protective film 6 with the resin layer 7. The shielding film 13 is formed by applying a silanol compound solution on the surface and baking it at 200 to 450 ° C. using an oven to form the shielding film 13 made of a silicon compound, which is contained in water or water. It acts to shield salts. Next, as shown in FIG. 3 (6), the magnetic substrate 8b having the shielding film 13 formed thereon is bonded to the mica substrate 1 by the resin layer 7 made of epoxy resin.

Up to the above steps, a large number of magnetoelectric conversion elements 20 may be simultaneously manufactured by using a mother substrate of one magnetic substrate. In this case, it is separated into individual magnetoelectric conversion elements before the next step.

Next, as shown in FIG. 1, external connection electrodes 9 are formed so as to connect to the connection electrodes 5 and 5 on the individually cut end faces of the magnetoelectric conversion element 20.

The magnetoelectric conversion element 20 is manufactured by the above steps.

In this embodiment, the example in which the external connection electrodes 9 and 9 for connecting to the external element are formed has been described. However, the external connection terminals made of lead members are connected to the connection electrodes 5 and 5. May be connected to.

Further, in this embodiment, the magnetic substrate 8 is used.
Although the case where the magnetoelectric conversion element is formed using a and 8b has been described, a ceramic substrate such as alumina, forsterite, or mullite may be used.

Further, in this embodiment, the shielding film formed on the substrate is described as being formed on a film made of a silicon compound by using a silanol resin, but it is dense and water or salts contained in the water is removed from the substrate. It may be formed of another organic material or inorganic material as described below as long as it can prevent the magnetic sensitive portion from entering. Furthermore, you may form the shielding film which formed the organic material or inorganic material of 2 or more types in multiple layers.

The shielding film is made of any one of organic materials selected from polyimide resin, acrylic resin, phenol resin, silicon oxide, aluminum oxide, silicon nitride, borosilicate, aluminum borate, alkaline lead borate, and mica. It can be formed using an inorganic material selected from the above.

When the shielding film is formed of a polyimide resin, a commercially available polyimide solution is applied to the magnetic substrate as in the case of forming the silanol resin film, and the oven is used at a temperature of 90 to 350 ° C. It may be heated by.

When an acrylic resin or a phenol resin is used instead of the polyimide resin, it may be the same as the polyimide resin.

When the shielding film is formed of a polycrystalline thin film, sputtering, using an inorganic material selected from silicon oxide, aluminum oxide and silicon nitride,
It can be formed by a method selected from PVD, CVD, vapor deposition, and SOG (spin on glass) method. To form a shielding film made of an amorphous thin film, an inorganic material selected from borosilicic acid, aluminum borate, and alkaline lead borate is applied and then heated to a temperature higher than the softening point to be vitrified. It can be a shielding film.
The heat treatment temperature at this time is preferably 600 to 800 ° C.

The mica substrate may be adhered by a resin so as to act as a shielding film without forming a polycrystalline thin film.

Further, in the upper layer of the shielding film made of an inorganic material,
For example, an ultraviolet curable acrylic resin may be further formed. The formation conditions are, for example, acrylic resin monomer.
Is preferably applied to a shielding film made of an inorganic material, irradiated with ultraviolet rays for 2 minutes, and cured at 200 ° C. for 10 minutes to form a shielding film.

Furthermore, the shielding film does not have to be formed on the surface to which the resin layer is adhered, and the same effect can be obtained even if it is formed on the outermost surface.

(Embodiment 2) A method of manufacturing a magnetoelectric conversion element 30 according to another embodiment of the present invention will be described with reference to FIG. The magnetoelectric conversion element 30 according to the present embodiment has the same structure as that of the first embodiment, but the magnetic sensing part is manufactured using an InSb bulk wafer.

First, as shown in FIG. 4 (1), a magnetic substrate 8a is prepared, and a silanol compound solution is applied to the surface of the magnetic substrate 8a.
The shielding film 13 made of a silicon compound is formed by baking at 200 to 450 ° C. using an oven. This silicon compound acts so as to prevent moisture and gas contained in the external environment from entering the magnetoresistive element pattern 4 from the magnetic substrate 8a. Next, as shown in FIG.
The InSb bulk wafer 14 is bonded to the surface of the magnetic substrate 8a on which the shielding film 13 is formed, with the resin layer 7 interposed therebetween. Next in FIG.
As shown in (3), the InSb bulk wafer 14 is lapped or etched to a thickness of 5 μm to form an InSb film 11. Next, as shown in FIG. 4D, the InSb film 11 is formed on the magnetic sensing portion 2a and the electrode films 2b and 2b by photolithography. Next, FIG. 4 (5)
As shown in Fig. 3, a film is formed on the surface of the substrate by a vacuum vapor deposition method with Al as an upper layer and Ti as a lower layer, and this is formed into a short bar-3 film.
a. ． ． The pattern 3a and the conductive films 3b and 3b are simultaneously formed by photolithography. Magnetically sensitive portion 2a and short bar-3a. ． ． The magnetoresistive element pattern 4 is constituted by 3a, and the electrode films 2b, 2b and the conductive film 3b,
Connection electrodes 5 and 5 are formed by 3b. Both ends of the pair of magnetic sensitive portions 2a formed on the magnetic substrate 8a are connected to the connection electrodes 5 and 5, respectively. Next, as shown in FIG. 4 (6), the magnetoresistive element pattern 4 and the connecting electrodes 5, 5
The protective film 6 for protecting the and is formed by sputtering or SOG (spin on glass) method. Note that the material used for the protective film 6 may be silica, alumina, silicon nitride, aluminum nitride, or the like having a coefficient of thermal expansion substantially equal to that of InSb. Next, as shown in FIG. 4 (7), the magnetic substrate 8b on which the shielding film 13 is formed in advance is adhered to the protective film 6 via the resin layer 7.

Up to the above steps, a large number of magnetoelectric conversion elements 30 may be manufactured simultaneously using the mother substrate of one magnetic substrate. In this case, it is separated into individual magnetoelectric conversion elements before the next step.

Next, as shown in FIG. 4 (8), external connection electrodes 9 and 9 are formed on the end faces of the individually cut magnetoelectric conversion elements 30 so as to be connected to the connection electrodes 5 and 5.

The magnetoelectric conversion element 30 is manufactured by the above steps.

In the present embodiment, the example in which the external connection electrodes 9 and 9 for connecting to the external element are formed has been described, but the external connection terminals made of lead members are connected to the connection electrodes 5 and 5. May be connected to.

Further, in this embodiment, the magnetic substrate 8 is used.
Although the case where the magnetoelectric conversion element is formed using a and 8b has been described, a ceramic substrate such as alumina, forsterite, or mullite may be used.

Furthermore, in this embodiment, the shielding film formed on the substrate is the case where it is formed of a silicon compound using a silanol resin, but it is dense and does not pass water or salts contained in water. If so, from an organic material selected from any one of polyimide resin, acrylic resin, phenol resin, or any one of silicon oxide, aluminum oxide, silicon nitride, lead borate, borosilicate, aluminum borate, and alkali lead borate. It may be formed of a selected inorganic material, or a plurality of layers of an organic material and an inorganic material may be formed.

The mica substrate may be adhered by a resin so as to act as a shielding film without forming the polycrystalline thin film.

Further, the shielding film does not have to be formed on the surface to be bonded with the resin layer, and the same effect can be obtained even if it is formed on the outermost surface.

(Embodiment 3) A magnetoelectric conversion element 40 according to another embodiment of the present invention will be described with reference to FIG.

FIG. 5 is a sectional view of the magnetoelectric conversion element 40.
The same parts as those of the magnetoelectric conversion element 20 described in the first embodiment are designated by the same reference numerals and the description thereof will be omitted.

As shown in FIG. 5, the magnetoelectric conversion element 40 is
InSb having a meander line shape on the mica substrate 1
A magnetic sensitive portion 2a made of a film, and a plurality of short bar 3a. Intermittently formed on the surface of the magnetic sensitive portion 2a. ． ． A magnetoresistive element pattern 4 composed of 3a and electrode films 2b, 2b electrically connected to both ends of the magnetoresistive element pattern 4.
b and the conductive films 3b and 3b, and the connection electrodes 5 and 5 having a two-layer structure, and the protective film 6 for protecting the magnetoresistive element pattern 4 and the connection electrodes 5 and 5. There is. The magnetic film substrate 8a having the shielding film 13 formed on the protective film 6 is
The magnetic material substrate 8b is provided on the mica substrate 1 and the resin layer 7
Connection electrodes 5 and 5 that are bonded by
The external connection electrodes 9, 9 are connected to. No shield film is formed on the magnetic substrate 8b.

Also in the magnetoelectric conversion element 40 according to the present embodiment, the shielding film 13 formed on the magnetic substrate 8a has a magnetoresistive element pattern in which water or salts contained in water pass through the magnetic substrate from the outside. -Prevent infiltration of Since the mica substrate 1 does not allow water to pass therethrough, the water does not pass through the magnetoresistive element pattern even if the shielding film is not formed on the magnetic substrate 8b.
It does not penetrate into the environment.

Further, in this embodiment, the magnetic substrate 8 is used.
Although the case where the magnetoelectric conversion element is formed using a and 8b has been described, a ceramic substrate such as alumina, forsterite, or mullite may be used.

Furthermore, the material for forming the shielding film 13 and the method of forming the shielding film 13 are not limited to the organic material and the inorganic material as shown in the first embodiment, and the shielding film 13 may be formed by forming them in multiple layers. Not to mention good things.

(Embodiment 4) A magnetoelectric conversion element 50 according to another embodiment of the present invention will be described with reference to FIG.

FIG. 6 is a sectional view of the magnetoelectric conversion element 50.
The same parts as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted.

The magnetoelectric conversion element 50 comprises a mica substrate 1 and a magnetically sensitive portion 2 made of an InSb film having a meander line shape.
a and a plurality of short bars 3a. ． ． Protecting the magnetoresistive element pattern 4 constituted by 3a, the connecting electrodes 5 and 5 connected to both ends of the magnetoresistive element pattern 4, and the magnetoresistive element pattern 4 and the connecting electrodes 5 and 5. And a protective film 6 for forming
The magnetic substrate 8a having the shielding film 13 formed on the surface of the mica substrate 1 on which the magnetoresistive element pattern 4 is not formed is adhered by the resin layer 7, and the connection electrodes 5 and 5 exposed on the end faces.
The external connection electrodes 9 and 9 are connected to.

The material of each part constituting the magnetoelectric conversion element 50 and the method of forming the same are the same as those in the first, second or third embodiment.

The magnetoelectric conversion element 50 having such a structure acts as a shielding film because the mica substrate 1 is dense and does not allow water or salts contained in water to pass therethrough. Further, since the distance between the magnetoresistive element pattern 4 and the object to be detected can be reduced, the sensitivity is improved.

[0060]

The magnetoelectric conversion element of the present invention has a structure using a substrate on which a shielding film is formed in advance, using an organic material, an inorganic material, or a material in which an organic material and an inorganic material are combined. . As a result, water or salts contained in the water does not enter the magnetic sensitive section from the substrate, so that a magnetoresistive element having a magnetic sensitive section having excellent moisture resistance can be obtained.

[Brief description of drawings]

FIG. 1 is a sectional view of a magnetoelectric transducer according to an embodiment of the present invention.

FIG. 2 is a plan view of a magnetoelectric conversion element according to an embodiment of the present invention.

FIG. 3 is a cross-sectional view of a magnetoelectric conversion element according to an embodiment of the present invention during manufacture.

FIG. 4 is a sectional view of the magnetoelectric conversion element according to another embodiment of the present invention during manufacture.

FIG. 5 is a cross-sectional view of another embodiment of the magnetoelectric conversion element according to the present invention.

FIG. 6 is a cross-sectional view of another embodiment of the magnetoelectric conversion element according to the present invention.

FIG. 7 is a cross-sectional view of a conventional magnetoelectric conversion element.

FIG. 8 is a plan view of a conventional magnetoelectric conversion element.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Mica substrate 1a Protective film 2a Magnetic sensing part 2b Electrode film 3a Shorter bar 3b Conductive film 4 Magnetoresistive element pattern 5 Connection electrode 6 Protective film 7 Resin layer 8a, 8b Magnetic substance substrate 9 External connection electrode 10 Exterior resin 11 InSb film 13 Shielding film 14 InSb bulk wafer 20, 30, 40, 50, 60 Magnetoelectric conversion element

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Mifumi Ogiso 2 26-10 Tenjin Tenjin, Nagaokakyo-shi, Kyoto Murata Manufacturing Co., Ltd.

Claims (7)

[Claims] 1. A magnetic sensitive section having a magnetoresistive effect on a substrate,
A magnetoelectric conversion element in which a connection electrode is formed, and the magnetic sensing section and the connection electrode are covered with a protective film, wherein a shielding film is formed on the substrate. 2. The magnetoelectric conversion element according to claim 1, wherein the shielding film is made of an organic material selected from silanol resin, polyimide resin, acrylic resin and phenol resin. . 3. The shielding film is formed of a polycrystalline thin film made of silicon oxide, aluminum oxide or silicon nitride, or lead borate, borosilicate, aluminum borate or alkali lead borate. The magnetoelectric conversion element according to claim 1, wherein the magnetoelectric conversion element is formed of an inorganic material composed of an amorphous thin film. 4. The shielding film is formed of an organic shielding film made of any one of silanol resin, polyimide resin, acrylic resin and phenol resin and any one of silicon oxide, aluminum oxide and silicon nitride. Characterized by having a two-layer structure comprising an amorphous thin film which is an amorphous thin film formed by any one of lead borate, borosilicate, aluminum borate and alkali lead borate. Item 1. A magnetoelectric conversion element according to item 1. 5. A magnetic sensitive section having a magnetoresistive effect on a substrate,
A method of manufacturing a magnetoelectric conversion element, comprising forming a connection electrode and covering the magnetically sensitive portion and the connection electrode with a protective film, comprising the step of forming a shielding film on the substrate. Production method. 6. The shielding film is made of a polycrystalline thin film selected from silicon oxide, aluminum oxide and silicon nitride, and is used for sputtering, PVD, CVD, vapor deposition, SO.
The method of manufacturing a magnetoelectric conversion element according to claim 5, wherein the method is formed by a method selected from G (spin on glass) method. 7. The shielding film is made of an amorphous thin film selected from any of lead borate, borosilicate, aluminum borate, and alkali lead borate, and is formed by coating on a substrate and further heat treating. The method for manufacturing a magnetoelectric conversion element according to claim 5.