JPH0822027A - Thin-film transistor matrix substrate and its production - Google Patents

Abstract

PURPOSE:To provide a means for preventing deterioration in characteristics by forming resin films only on the drain bus lines, etching away the metallic films formed on pixel electrodes with these resin films as a mask and further, covering the side faces of the channel layers of thin-film transistors (TFTs) or the entire surface with a protective film. CONSTITUTION:The resin films 14 are electrodeposited on the drain bus lines in the state of maintaining the metallic layers, such as gate electrodes 121 facing the channel layers 101, light shielding films 2, etc., at the state to maintain the potential to turn of the TFTs. At this time, the gate electrodes 121 or the gate bus lines are coated with anodically oxidized films and the resin films 142 to prevent the gate electrodes 121, etc., from acting as counter electrodes at the time of electrodeposition of the resins. In addition, the protective film over the entire surface is formed by electrodeposition of a photosensitive resin and the photosensitive resin films of terminal parts are exposed and are removed by developing. A resist to prevent electrodeposition is formed at the terminal parts to prevent the electrodeposition of the resin in these parts.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor matrix substrate used for driving liquid crystals of an active matrix type liquid crystal display device and a manufacturing method thereof.

Since a liquid crystal display device is a thin and lightweight display device, it is being adopted as a display device in various industrial fields such as OA equipment. In particular, an active matrix type liquid crystal display device is expected as a flat display device because it can obtain a color display quality comparable to that of a cathode ray tube (CRT).

However, in the active matrix type liquid crystal display device, the structure of the thin film transistor matrix substrate for driving the liquid crystal cell is complicated, and the reduction of the manufacturing yield and the increase of the manufacturing cost are problems, and the manufacturing process is simplified. There is a demand for higher cost and lower cost.

[0004]

2. Description of the Related Art Conventionally, as one of the methods for simplifying the manufacturing process of a thin film transistor matrix substrate, the drain bus line is made to have a low resistance by selectively electrodepositing a low resistance metal on the drain bus line. Manufacturing method, that is, a method of forming the low resistance metal on the entire surface including the drain bus line and reducing unnecessary resistance of the drain bus line by etching away unnecessary portions thereof by photolithography to reduce the number of times of forming the mask. Has been proposed (see Japanese Patent Application No. 5-221645).

FIG. 6 is an explanatory view of a manufacturing process of a conventional thin film transistor matrix substrate, including (A _S ) and (A _P ).
(C _S ) and (C _P ) show the cross section and the plane of each process. In this figure, 31 is a transparent insulating substrate, 32 is a light shielding film, 33 is an insulating film, 34 is a transparent conductive film, 35 is a metal film,
36 is a source electrode, 37 is a drain electrode, 38 is a drain bus line, 39 is a pixel electrode, 40 is a semiconductor layer, 41
Gate insulating film, 42 gate electrode, 43 a gate bus line, 44 _1, 44 ₂ is a resin film.

A conventional method of manufacturing a thin film transistor matrix substrate will be described with reference to the manufacturing process explanatory diagram.

First step (see FIGS. 6A _{S and} 6 A _P ) A Cr film is formed on the transparent insulating substrate 31 by a sputtering method and is patterned by a photolithography process to form a light shielding film 32. Form.

Then, the light-shielding film 32 is covered to cover the plasma CV.
An insulating film 33 made of SiO ₂ is formed on the entire surface by the D method to about 6
000Å Accumulate. Then, a transparent conductive film 34 made of ITO is formed on the insulating film 33 by a sputtering method to a thickness of about 500 Å.
A metal film 35 made of Cr is further deposited thereon by a sputtering method to a thickness of about 1000 Å.

Then, the metal film 35 and the transparent conductive film 34 are patterned by a photolithography process to form the source electrode 36, the drain electrode 37, and the drain bus line 3.
8 and the pixel electrode 39 are formed. In this case, the Cr film deposited on the drain bus line 38 is formed for the purpose of lowering the resistance of the drain bus line 38 and preventing signal delay due to the drain bus line 38.

Second step (see FIGS. 6 (B _S ) and (B _P )) A region containing a gap between the drain electrode 37 and the source electrode 36 is doped with impurities (P) at a high concentration by plasma CVD. Forming a layer on which a thickness of 300
Deposit Å amorphous silicon (a-Si) layer.

Furthermore, a silicon nitride (Si) for forming a gate insulating film is further formed thereon by a plasma CVD method.
An N) film is deposited by about 4000Å, and an aluminum (Al) film for forming a gate electrode is then deposited thereon by a sputtering method. Next, a resist film is formed in a region where a gate electrode and a gate bus line are to be formed by a photolithography process, and using this resist film as a mask, an aluminum (Al) film, a silicon nitride (SiN) film, and an amorphous silicon layer. , A semiconductor layer 4 having a contact layer by patterning a silicon layer
0, the gate insulating film 41, the gate electrode 42, and the gate bus line 43 are formed.

Third step (see FIGS. 6 (C _S ) and (C _P )) The thin film transistor matrix substrate whose steps have been advanced up to this point is dipped in a resin electrodeposition liquid, and only the drain bus line 38 is energized to form a resin film 44. ₁ is selectively electrodeposited on the drain bus line 38.

Then, the resin film 44 ₁ is dried in a nitrogen oven or the like, and the dried resin film 44 ₁ is irradiated with ultraviolet rays to be cured. Using this resin film 44 ₁ as a mask, the metal film 35 on the pixel electrode 39 is selectively removed and made transparent to complete the thin film transistor matrix substrate. The resin film 44 ₂ in this figure will be described later.

[0014]

In the conventional method of manufacturing a thin film transistor matrix substrate as described above,
In the third step, since the metal layer facing the semiconductor layer 40 or present in the vicinity thereof, for example, the gate electrode 42 is in an electrically floating state, the potential of the gate electrode 42 is electrodeposited when the resin film 44 ₁ is electrodeposited. Becomes unstable.

Therefore, the thin film transistor is turned on.
From the drain electrode 37 through the thin film transistor
Current flows to the source electrode 36, and the resin film is applied to the pixel electrode 39.
44 ₂May be electrodeposited.

Similarly, the light-shielding film 32 or a storage capacitor layer (not shown) formed to maintain the voltage applied to the liquid crystal display cell is floated during electrodeposition, so that charges are stored. However, the electric field generated by this may affect the thin film transistor, and the thin film transistor may be turned on.

Therefore, the resin film 44 is formed on the pixel electrode 39.
₂ is electrodeposited, and there is a problem that the metal film 35 on the pixel electrode 39 cannot be removed by etching to make the pixel electrode 39 sufficiently transparent.

In view of the above problems, the present invention is directed to the pixel electrode 3
It is an object of the present invention to provide a thin film transistor matrix substrate in which the resin film 44 ₂ is not electrodeposited on 9 and the resin film 44 ₁ is electrodeposited only on the drain bus line 38, and a manufacturing method thereof.

[0019]

According to the present invention, at least a pixel electrode, a source electrode connected to the pixel electrode, a drain electrode facing the source electrode, and a drain electrode are provided on an insulating substrate. A drain bus line connected to the source electrode, a semiconductor layer formed on the source electrode and the drain electrode, a gate insulating film formed on the semiconductor layer, and a gate formed on the gate insulating film. Electrodes,
In the thin film transistor matrix substrate including the gate bus line connected to the gate electrode, the side surface of the semiconductor layer forming the channel of the thin film transistor is covered with a resin film.

In this case, the drain electrode has a width of 5 μm or more, or protrudes from the side surface of the thin film transistor by 5 μm or more, or has a width of 5 μm or more and protrudes from the side surface of the thin film transistor by 5 μm or more. Can be deposited in large amounts.

Further, according to the present invention, at least the pixel electrode, the source electrode connected to the pixel electrode, the drain electrode facing the source electrode, and the drain electrode are connected on the insulating substrate. Drain bus line,
A semiconductor layer formed on the source electrode and the drain electrode, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, and connected to the gate electrode. In the thin film transistor matrix substrate including the gate bus line, the resin film formed on the gate electrode covers the gate insulating film under the gate electrode and the side surface of the semiconductor layer forming the channel of the thin film transistor. A configuration can be adopted.

Further, according to the present invention, at least the pixel electrode, the source electrode connected to the pixel electrode, the drain electrode facing the source electrode, and the drain electrode are connected on the insulating substrate. Drain bus line,
A semiconductor layer formed on the source electrode and the drain electrode, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, and connected to the gate electrode. The thin film transistor matrix substrate including the gate bus line, with a light-shielding film added below the semiconductor layer as necessary, or with the storage capacitor layer facing the pixel electrode is immersed in the resin electrodeposition liquid. In a method of manufacturing a thin film transistor matrix substrate in which a drain bus line is energized to selectively deposit a resin film on a drain electrode or a drain bus line, a thin film transistor is turned off in a metal layer existing in the vicinity of the semiconductor layer. A process of holding the potential and electrodepositing the resin film on the drain electrode or the drain bus line can be adopted.

In this case, the gate electrode facing the semiconductor layer is held at a potential at which the thin film transistor is turned off,
A resin film can be electrodeposited on the drain electrode or the drain bus line.

Further, in this case, the light-shielding film formed under the semiconductor layer can be held at a potential for turning off the thin film transistor, and the resin film can be electrodeposited on the drain electrode or the drain bus line.

Further, in this case, the storage capacitor layer formed facing the pixel electrode in the vicinity of the semiconductor layer is held at a potential at which the thin film transistor is turned off, and a resin film is electrodeposited on the drain electrode or the drain bus line. can do.

Further, in these cases, the resin film can be electrodeposited on the drain electrode or the drain bus line with the potential of at least one of the gate electrode, the light-shielding film, and the storage capacitor layer set to 0V.

Further, according to the present invention, at least the pixel electrode, the source electrode connected to the pixel electrode, the drain electrode facing the source electrode, and the drain electrode are connected on the insulating substrate. Drain bus line,
A semiconductor layer formed on the source electrode and the drain electrode, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, and connected to the gate electrode. The thin film transistor matrix substrate including the gate bus line, with a light-shielding film added below the semiconductor layer as necessary, or with the storage capacitor layer facing the pixel electrode is immersed in the resin electrodeposition liquid. In a method of manufacturing a thin film transistor matrix substrate in which a drain bus line is energized and a resin film is selectively electrodeposited on the drain electrode or the drain bus line, the gate electrode or the gate bus line is covered with an insulating material in advance to form the drain electrode or the drain. A process of electrodepositing a resin film on the bus line was adopted.

In this case, the gate electrode or the gate bus line can be covered with the anodic oxide film, and the resin film can be electrodeposited on the drain electrode or the drain bus line.

Further, in this case, the gate electrode and the gate bus line can be covered with the resin film, and the resin film can be electrodeposited on the drain electrode or the drain bus line.

In this case, the resin film can be electrodeposited on the drain electrode or the drain bus line by covering the gate electrode or the gate bus line with an insulating material wider than the pattern.

Further, according to the present invention, at least the pixel electrode, the source electrode connected to the pixel electrode, the drain electrode facing the source electrode, and the drain electrode are connected on the insulating substrate. Drain bus line,
A semiconductor layer formed on the source electrode and the drain electrode, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, and connected to the gate electrode. The thin film transistor matrix substrate including the gate bus line, with a light-shielding film added below the semiconductor layer as necessary, or with the storage capacitor layer facing the pixel electrode is immersed in the resin electrodeposition liquid. In the method of manufacturing a thin film transistor matrix substrate in which a drain bus line is energized to selectively electrodeposit a resin film on the drain electrode or drain bus line, the thickness of the resin film electrodeposited on the drain electrode or drain bus line Of 0.3 μm or more and reflowing the resin film to cover the side surface of the semiconductor layer forming the channel of the thin film transistor. It was adopted degree.

In this case, the thickness of the resin film electrodeposited on the drain electrode or the drain bus line is controlled to 0.degree. By controlling the time or voltage for electrodeposition of the resin film.
It can be 3 μm or more.

Further, in this case, by controlling the drying temperature or the drying time of the resin film, the resin film electrodeposited on the drain electrode or the drain bus line is reflowed to form the channel of the semiconductor layer of the thin film transistor. The sides can be covered.

Further, according to the present invention, at least the pixel electrode, the source electrode connected to the pixel electrode, the drain electrode facing the source electrode, and the drain electrode are connected on the insulating substrate. Drain bus line,
A semiconductor layer formed on the source electrode and the drain electrode, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, and connected to the gate electrode. In a method of manufacturing a thin film transistor matrix substrate including a gate bus line, a resin film formed on a gate electrode is reflowed to form a gate insulating film below the gate electrode and a semiconductor layer forming a channel of the thin film transistor. The process of covering the sides was adopted.

In this case, the resin film covering the gate insulating film under the gate electrode and the side surface of the semiconductor layer forming the channel of the thin film transistor can be cured by light or heat.

In this case, a resin film is electrodeposited to a thickness of 0.5 μm or more, and the resin film is laterally reflowed to form a gate insulating film under the gate electrode and a semiconductor layer forming a channel of the thin film transistor. The sides can be covered.

Further, in this case, before the resin film electrodeposited on the gate electrode is cured by heat, the resin film is reflowed by maintaining the temperature environment lower than the curing temperature, so that The side surface of the semiconductor layer forming the gate insulating film and the channel can be covered.

In this case, the drain electrode and the drain bus line can be maintained at a constant voltage in the step of forming the resin film on the gate electrode and the gate bus line by the electrodeposition method.

Further, in this case, a resin film is formed on the drain electrode and the drain bus line by the electrodeposition method, and a resin film is formed on the gate electrode and the gate bus line by the electrodeposition method, and then on the pixel electrode. The pixel electrode can be made transparent by removing the formed metal film by etching.

In this case, the gate electrode and the gate bus line can be maintained at a constant voltage in the step of forming the resin film on the drain electrode and the drain bus line by the electrodeposition method.

Further, according to the present invention, at least the pixel electrode, the source electrode connected to the pixel electrode, the drain electrode facing the source electrode, and the drain electrode are connected on the insulating substrate. Drain bus line,
A semiconductor layer formed on the source electrode and the drain electrode, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, and connected to the gate electrode. In the method of manufacturing a thin film transistor matrix substrate including a gate bus line, a photosensitive resin film is electrodeposited on at least a part of the drain electrode, the drain bus line, the gate electrode, and the gate bus line, and the photosensitive resin film is selected. The process of removing the photosensitive resin film in an unnecessary portion by selectively exposing and developing is adopted.

Further, according to the present invention, at least the pixel electrode, the source electrode connected to the pixel electrode, the drain electrode facing the source electrode, and the drain electrode are connected on the insulating substrate. Drain bus line,
A semiconductor layer formed on the source electrode and the drain electrode, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, and connected to the gate electrode. In the method of manufacturing a thin film transistor matrix substrate including a gate bus line, a portion in which a resin film need not be formed is adhered and covered with tape, resist printing, rubber or the like to prevent contact with a resin electrodeposition liquid. Then, a step of forming a resin film on at least a part of the drain electrode, the drain bus line, the gate electrode, and the gate bus line was adopted.

[0043]

In the thin film transistor matrix substrate and the method of manufacturing the same according to the present invention, a resin film is electrodeposited on the drain bus line while maintaining the metal layer existing at or near the semiconductor layer serving as the active layer at a constant potential. Since the thin film transistor can always be kept in the off state, it is possible to block the current flowing through the pixel electrode during electrodeposition.

Therefore, when the metal film is etched by using this resin film as a mask, the metal film formed on the drain bus line is left, and the metal film formed on the pixel electrode is selectively removed by etching to remove the metal film. Can be made transparent.

Further, by covering the gate electrode and the gate bus line with an insulating material in advance, the influence of the electric field generated from the gate bus line and the gate electrode can be prevented when the resin film is electrodeposited on the drain bus line. Further, it is possible to prevent the gate bus line and the gate electrode from acting as electrodes on the electrodeposition opposite side, and prevent the electrodeposition of the resin film from becoming unstable.

Further, by using the above-mentioned insulator formed on the gate electrode as a resin film and forming the resin film wider than the gate pattern, the metal layer of the drain electrode and the drain bus line is removed by etching. In doing so, it is possible to prevent side etching inside this portion of the thin film transistor.

From the above, the resin film can be selectively and electrodeposited on the drain bus line with high precision, and therefore the metal film on the pixel electrode can be etched with high selectivity and the side etching of the thin film transistor portion can be performed. It can be reduced. Therefore, by a simple process,
A low resistance drain bus line can be formed, the characteristics of the thin film transistor can be improved, and a thin film transistor matrix substrate having excellent characteristics can be realized.

[0048]

Embodiments of the present invention will be described below. (First Embodiment) FIGS. 1 and 2 are explanatory views of a manufacturing process of a thin film transistor matrix substrate of the first embodiment.
(A _s ), (A _p )-(E _s ), (E _p ) show the cross section and the plane of each step. In this figure, 1 is a transparent insulating substrate, 2 is a light-shielding film, 3 is an insulating film, 4 is a transparent conductive film, 5 is a metal film, 6 is a source electrode, 7 is a drain electrode, 8 is a drain bus line, and 9 is a pixel. Electrodes, 10 are semiconductor layers, 10
₁ is a channel layer, 11 is a silicon nitride film, 11 ₁ is a gate insulating film, 12 is an aluminum film, 12 ₁ is a gate electrode, 12 ₂ is a gate bus line, 13 is a resist film, 1
4 is a resin film.

A method of manufacturing the thin film transistor matrix substrate of the first embodiment will be described with reference to the manufacturing process explanatory diagram.

First step (see FIGS. 1A _{S and} 1 A _P ) C is sputtered on a transparent insulating substrate 1 such as glass.
A metal film of r or the like is formed, and the metal film is patterned by a photolithography process to form the light shielding film 2.

Next, the plasma CV is covered by covering the light shielding film 2.
An insulating film 3 made of SiO _{2 is} deposited by the method D to about 6000Å. A transparent conductive film 4 made of ITO and C
A metal film 5 of r or the like is deposited by a sputtering method of 500Å and 1000Å respectively, and patterned by a photolithography process to form a source electrode 6, a drain electrode 7,
The drain bus line 8 and the pixel electrode 9 are formed.

Second step (see FIGS. 1 (B _S ) and (B _P )) A metal containing a gap between the drain electrode 7 and the source electrode 6 is formed of a semiconductor layer highly doped with an impurity (P) by a plasma CVD method. A semiconductor layer 10 made of amorphous silicon (a-Si) is deposited on the film 5 by 300 Å. Further, a silicon nitride (SiN) film 11 is formed on the
0 Å deposit and then aluminum (A
l) A film 12 having a thickness of 2000 Å is deposited, and a resist film 13 is formed on the aluminum film 12 in a region where a gate electrode and a gate bus line are to be formed by a photolithography process.
To form.

Third Step (Refer to FIGS. 1 (C _S ) and (C _P )) Using the resist film 13 as a mask, the aluminum film 12,
The silicon nitride film 11 and the semiconductor layer 10 are sequentially removed by etching to remove the gate electrode 12 ₁ , the gate bus line 12 ₂ ,
The gate insulating film 11 ₁ and the channel layer 10 ₁ are formed. Then, the resist film 13 is peeled off.

Fourth Step (see FIGS. 2 (D _S ) and (D _P )) The thin film transistor matrix substrate to which the above steps have been added is immersed in a resin electrodeposition liquid maintained at 25 ° C. At this time, the gate bus line 12 _2, for example by applying a 0V, the drain electrode 7 and the drain bus line 8 by applying a voltage of 10V, for example as an anode, by passing a 20 seconds direct current, the drain electrode 7 and the drain bus The resin film 14 is electrodeposited on the exposed portion of the line 8.

In this way, the potential of the gate electrode 12 ₁ of the thin film transistor does not fluctuate, and the thin film transistor can always be kept in the off state. Therefore, no current flows through the thin film transistor, the resin film 14 is electrodeposited only on the exposed portions of the drain bus line 8 and the drain electrode 7 which are the current-carrying portions, and the resin film 14 is not attached to the pixel electrode 9 and selective. Enables electrodeposition. After electrodeposition, it is washed with water and dried in a nitrogen oven at 80 ° C. for about 5 minutes, for example. When the resin film 14 is formed of an ultraviolet curable material, the resin film 14 is irradiated with ultraviolet rays to be cured.

Fifth Step (See FIGS. 2 (E _S ) and (E _P )) The thin film transistor matrix substrate to which the above steps have been added is immersed in an etching solution for etching. At this time, the metal film 5 on the drain electrode 7 and the drain bus line 8 is not etched because it is covered with the electrodeposition resin film 14, and the gate electrode 12 ₁ and the gate bus line 12 ₂ are further etched by this etching solution. If it is made of a material such as aluminum (Al) which is not formed, it does not affect the thin film transistor and the metal film 5 on the pixel electrode 9 is not affected.
Only etched.

As a result, the metal film 5 is left on the drain electrode 7 and the drain bus line 8, and only the metal film 5 on the pixel electrode 9 is selectively etched to form the pixel electrode 9 by the transparent conductive film 4. Can be formed. Finally, the resin film 14 is peeled off.

[0058] In the above embodiment, although the metal layer to a constant potential to the gate electrode 12 ₁ is not limited to this, the light-shielding film 2 or the storage capacitor layer also to Furoto state affect the off state of the thin film transistor Therefore, it is effective to selectively deposit the resin film on the drain electrode 7 and the drain bus line 8 by electrodeposition of the resin film at a constant potential.

Furthermore, in the above-mentioned embodiments, the description has been made so that the gate electrode 12 ₁ which is the metal layer facing the semiconductor layer forming the channel is set to a constant potential of 0 V, but the present invention is not limited to this. In principle, any potential may be used as long as it is in a range in which an off current does not occur in the thin film transistor.

(Second Embodiment) FIGS. 3 and 4 are views for explaining the manufacturing process of the thin film transistor matrix substrate of the second embodiment, in which (A _S ), (A _P )-(F _S ), (F _P ). ) Indicates a cross section and a plane of each step. In this figure, 1 is a transparent insulating substrate, 2 is a light-shielding film, 3 is an insulating film, 4 is a transparent conductive film, 5 is a metal film, 6 is a source electrode, 7 is a drain electrode,
8 is a drain bus line, 9 is a pixel electrode, 10 is a semiconductor layer, 10 ₁ is a channel layer, 11 is a silicon nitride film, 11
₁ is a gate insulating film, 12 is an aluminum film, 12 ₁ is a gate electrode, 12 ₂ is a gate bus line, 13 is a resist film, 14 is a resin film, 15 is an anodized film, 16 is a counter electrode, and 17 is a power supply. .

A method of manufacturing the thin film transistor matrix substrate according to the second embodiment will be described with reference to the manufacturing process explanatory diagram. By the process described in the first embodiment, the drain electrode 7
Although the resin film can be selectively electrodeposited on the drain bus line 8 and the gate electrode 12 ₁ and the gate electrode 12 _{1 in} order to increase the selectivity margin and selectively electrodeposit the resin film with higher reliability. it is conceivable to electrodepositing a resin film 14 in a state of forming an insulating film covering the bus line 12 _2.

That is, in the first embodiment, when the resin film is selectively electrodeposited on the drain electrode 7 and the drain bus line 8, the gate electrode 12 ₁ and the gate bus line 12 ₂ are exposed. Is maintained at a constant voltage (for example, 0 V), the same function as the counter electrode in electrodeposition of the resin film 14 may occur. As a result, the electrodeposition on the drain electrode 7 or the drain bus line 8 may be affected, and the electrodeposition of the resin film 14 may become unstable.

[0063] Further, by applying a constant voltage to the gate electrode 12 _1, an electric field is generated from the gate electrode 12 ₁ and the gate bus line 12 _2, thereby electrodeposition onto a drain electrode 7 and the drain bus line 8 There are also problems such as non-uniformity. Therefore, in the second embodiment, the gate electrode 12 ₁ and the gate bus line 12 _{2 are}
Is covered with an insulating film by anodic oxidation, and the drain bus line 8
A method for making the electrodeposition on the electrode highly accurate will be described.

First step (see FIGS. 3A _{S and} 3 A _P ) C is sputtered on the transparent insulating substrate 1 such as glass.
A metal film of r or the like is formed, and the metal film is patterned by a photolithography process to form the light shielding film 2.

Next, the plasma CV is covered by covering the light shielding film 2.
An insulating film 3 made of SiO _{2 is} deposited by the method D to about 6000Å. A transparent conductive film 4 made of ITO and C
A metal film 5 of r or the like is deposited by a sputtering method of 500Å and 1000Å respectively, and patterned by a photolithography process to form a source electrode 6, a drain electrode 7,
The drain bus line 8 and the pixel electrode 9 are formed.

Second step (see FIGS. 3 (B _S ) and (B _P )) A semiconductor layer doped with impurities (P) at a high concentration by the plasma CVD method is used as a metal including a gap between the drain electrode 7 and the source electrode 6. A semiconductor layer 10 made of amorphous silicon (a-Si) is deposited on the film 5 by 300 Å. Further, a silicon nitride (SiN) film 11 is formed on the
0 Å are sequentially deposited, and then 2000 Å of an aluminum (Al) film 12 is deposited by a sputtering method to form an aluminum film 1.
A resist film 13 is formed in a region on which the gate electrode and the gate bus line above are to be formed by a photolithography process.

Third Step (Refer to FIGS. 3 (C _S ) and (C _P )) Using the resist film 13 as a mask, the aluminum film 12,
The silicon nitride film 11 and the semiconductor layer 10 are sequentially removed by etching to form a gate electrode 12 ₁ , a gate bus line 12 ₂ , a gate insulating film 11 ₁ and a channel layer 10 ₁ .
Then, the resist film 13 is peeled off.

Fourth Step (See FIGS. 4 (D _S ) and (D _P )) The thin film transistor matrix substrate to which the above steps have been added is immersed in an electrolytic solution containing, for example, 10 to 30% sulfuric acid aqueous solution, and the power supply 17 is used. The counter electrode 16 made of platinum, carbon, stainless steel or the like is connected to the cathode of the above, and the gate bus line 12 ₂ is connected to the anode of the power source 17 so that a current of about 1 mA / cm ² is passed for a certain time in the constant current mode. Thus, the anodic oxide film 15 is formed on the surfaces of the gate electrode 12 ₁ and the gate bus line 12 ₂ .

Fifth Step (See FIGS. 4E _S and 4E _P ) The steps up to here are added to form a thin film transistor in which the anodic oxide film 15 is formed on the surfaces of the gate electrode 12 ₁ and the gate bus line 12 _2. The matrix substrate is dipped in a resin electrodeposition liquid maintained at a temperature of 25 ° C. to form a gate bus line 12 ₂
And the gate electrode 12 _1, for example, 0V is applied, a direct current flows to the drain electrode 7 and the drain bus line 8 by applying a voltage of to for example 10V in the anode 20 seconds,
A resin film 14 is electrodeposited on the exposed portion of the drain electrode 7 and the drain bus line 8.

Since the potential of the gate electrode 12 ₁ is maintained at a constant potential of, for example, 0 V, the thin film transistor is always kept in the off state, no current flows through the thin film transistor, and the resin film 14 is the conductive portion of the drain electrode. 7 is electrodeposited only on the exposed portions of the drain bus line 8.

Moreover, since the gate electrode 12 ₁ and the gate bus line 12 ₂ are covered with the anodic oxide film 15, this portion does not function as the counter electrode side and no electric field is generated. Drain bus line 8
A uniform and highly accurate resin film 14 is selectively formed on the upper surface. After electrodeposition of the resin film 14, the resin film 14 is washed with water and dried, for example, in a nitrogen oven at 80 ° C. for about 5 minutes. In addition, the resin film 14
It is irradiated with ultraviolet rays and cured.

[0072] Sixth Step (Fig. _{4 (F S), (F} P) refer) a metal film 5 step a thin film transistor matrix substrate applied is immersed in an etching solution so far removed by etching. At this time, the drain electrode 7 and the drain bus line 8 are not etched because they are covered with the resin film 14, and the gate electrode 12 ₁ and the gate bus line 12 ₂ are further removed.
Is formed of a material such as Al that is not etched by the etching solution and is covered with the anodic oxide film 15, so that only the metal film 5 on the pixel electrode 9 is etched without affecting the thin film transistor.

In this way, the metal film 5 is left on the drain electrode 7 and the drain bus line 8 and only the metal film 5 on the pixel electrode 9 is selectively etched to make the pixel electrode 16 transparent. . Finally, the resin film 14 is peeled off to complete the thin film matrix substrate.

In the above embodiment, the gate electrode 12 ₁
And it was used anodic oxide film 15 as an insulating film covering the gate bus line 12 _2, to which another insulating film is not limited may be formed by any process, for example, by electrodeposition, anodic oxidation film 15 You may form the resin film instead of.

(Third Embodiment) FIGS. 5A to 5C are views for explaining the manufacturing process of the thin film transistor matrix substrate of the third embodiment.
In this figure, 1 is a transparent insulating substrate, 2 is a light-shielding film, 3 is an insulating film, 4 is a transparent conductive film, 5 is a metal film, 6 is a source electrode, 7 is a drain electrode, 10 ₁ is a channel layer, and 11 ₁ is a gate insulating film, 12 ₁ gate electrode, 14, 14 ₂ is a resin film.

In this embodiment, the gate electrode 12 ₁
And the point where the gate bus line is covered with the resin film is the second
Different from the embodiment. In this embodiment, a light shielding film 2, an insulating film 3, a transparent conductive film 4 and a metal film 5 are formed on a transparent insulating substrate 1, and the transparent conductive film 4 and the metal film 5 are patterned to form a source electrode. 6 and the drain electrode 7 are formed,
In the gap between the source electrode 6 and the drain electrode 7, the channel layer 1
0 ₁ , the gate insulating film 11 ₁ , and the gate electrode 12 ₁ form a thin film transistor.

The thin film transistor matrix substrate that has undergone the steps up to this point is dipped in a resin electrodeposition solution, and a constant voltage of, for example, 10 V is applied to the gate electrode 12 ₁ and the gate bus line for 20 times.
Application for ₂ seconds to form a resin film 14 ₂ of about ₂ μm. After that, the resin film 14 is electrodeposited on the drain electrode 7 and the drain bus line in the same process as in the above-mentioned embodiment, and the resin film 14 is deposited.
Is used as a mask to selectively etch the metal film 5 on the pixel electrode to complete the thin film transistor matrix substrate.

At this time, when the resin film 14 ₂ is electrodeposited on the gate electrode 12 ₁ and the gate bus line, the drain electrode 7 and the drain bus line are maintained at a constant voltage at which the thin film transistor is turned off. When the resin film 14 is electrodeposited on the drain electrode 7 and the drain bus line, the gate electrode 12 ₁ and the gate bus line are
It is possible to prevent the resin film from being electrodeposited on the pixel electrode by maintaining a constant voltage at which the thin film transistor is turned off.

In this case, as shown in this figure, the resin film 14 _{2 is connected} to the gate electrode 12 ₁ and the gate bus line 1
By forming the metal film 5 wider than the pattern of 2 ₂ , it is possible to prevent side etching of the metal film 5 on the source electrode 6 when the metal film 5 on the pixel electrode is removed by etching.

(Fourth Embodiment) The first to third embodiments described above.
In the thin film transistor matrix substrate of the embodiment,
Since the side surface of the thin film transistor including the channel layer 10 ₁ , the gate insulating film 11 ₁ and the gate electrode 12 ₁ is exposed, moisture or the like may infiltrate from this portion and the characteristics of the thin film transistor may become unstable. .

The side surface between the drain electrode and the gate electrode or the drain bus line 8 and the gate bus line 12
There is a possibility that problems such as a leak current easily occur through the side surface at the intersection with ₂ . In this embodiment, the characteristics of the thin film transistor are stabilized by preventing the permeation of moisture or the like from the side surface of the thin film transistor, and the leak current is drained between the drain electrode 8 and the gate electrode 12 ₁ or between the drain bus line 8 and the gate bus line 12 _2. It is an object of the present invention to provide a thin film transistor matrix substrate which does not cause

FIGS. 7 and 8 are explanatory views of the manufacturing process of the thin film transistor matrix substrate of the fourth embodiment.
(A _s ), (A _p )-(E _s ), (E _p ) show the cross section and the plane of each step. In this figure, 1 is a transparent insulating substrate, 2 is a light-shielding film, 3 is an insulating film, 4 is a transparent conductive film, 5 is a metal film, 6 is a source electrode, 7 is a drain electrode, 8 is a drain bus line, and 9 is a pixel. Electrodes, 10 are semiconductor layers, 10
₁ is a channel layer, 11 is a silicon nitride film, 11 ₁ is a gate insulating film, 12 is an aluminum film, 12 ₁ is a gate electrode, 12 ₂ is a gate bus line, 13 is a resist film, 1
Reference numeral 4 is a resin film, 18 is a side surface of the thin film transistor, and 19 is a side surface at the intersection of the gate bus line and the drain bus line.

A method of manufacturing the thin film transistor matrix substrate of the fourth embodiment will be described with reference to the manufacturing process explanatory diagram.

[0084] The first step (FIG. _{7 (A S), (A} P) refer) C by sputtering on the transparent insulating substrate 1 such as glass
A metal film of r or the like is formed, and the metal film is patterned by a photolithography process to form the light shielding film 2.

Next, the light shielding film 2 is covered and the plasma CV is applied.
An insulating film 3 made of SiO _{2 is} deposited by the method D to about 6000Å. A transparent conductive film 4 made of ITO and C
A metal film 5 of r or the like is deposited by a sputtering method of 500Å and 1000Å respectively, and patterned by a photolithography process to form a source electrode 6, a drain electrode 7,
The drain bus line 8 and the pixel electrode 9 are formed.

[0086] The second step (FIG. 7 (B _S), (B _P) refer) including a semiconductor layer doped impurity (P) at high concentration by a plasma CVD method, the gap between the drain electrode 7 and the source electrode 6 A semiconductor layer 10 made of amorphous silicon (a-Si) is deposited on the metal film 5 by 300 Å. In addition, the silicon nitride (SiN) film 11 is applied to 40
00 Å is deposited, and then an aluminum (Al) film 12 is deposited to 2000 Å by a sputtering method.
A resist film 13 is formed in a region on which the gate electrode and the gate bus line above are to be formed by a photolithography process.

[0087] Step 3 (FIG. 7 (C _S), (C _P) refer) as a mask a resist film 13, an aluminum film 12,
The silicon nitride film 11 and the semiconductor layer 10 are sequentially removed by etching to form a gate electrode 12 ₁ , a gate bus line 12 ₂ , a gate insulating film 11 ₁ and a channel layer 10 ₁ .
Then, the resist film 13 is peeled off.

Fourth Step (see FIGS. 8 (D _S ) and (D _P )) The thin film transistor matrix substrate to which the above steps have been added is immersed in a resin electrodeposition liquid maintained at a temperature of 25 ° C. At this time, for example, 0 V is applied to the gate electrode 12 ₁ and the gate bus line 12 ₂ , 10 V is applied to the drain electrode 7 and the drain bus line 8 as an anode, and a DC voltage is applied for 20 seconds to drain the drain electrode 7 and the drain. The resin film 14 is electrodeposited on the exposed portion of the bus line 8.

At this time, the film thickness of the resin film 14 is controlled to 0.3 μm or more by controlling the electrodeposition voltage or the electrodeposition time, and after washing with water, the resin film is dried in a nitrogen oven at 80 ° C. for about 5 minutes, for example. The resin film 14 reflows to cover the side surface 18 of the thin film transistor and the side surface 19 at the intersection of the gate bus line and the drain bus line.

[0090] Step 5 (FIG. _{8 (E S), (E} P) refer) a metal film 5 is etched away by immersion in step etching solution a thin film transistor matrix substrate made up to this point. At this time, the drain electrode 7 and the drain bus line 8
Is not etched because it is covered with a resin film, and the gate electrode 12 ₁ and the gate bus line 12 ₂ are formed of a material that is not etched by this etching solution, so that the pixel electrode 9 is not affected by the thin film transistor. Only the metal film 5 which is not covered with the resin film 14 on the top is etched.

By this process, the metal film 5 on the drain electrode 7 and the drain bus line 8 can be left, and only the metal film 5 on the pixel electrode 9 can be selectively etched. The pixel electrode 9 is formed. Finally, the resin film 14 is peeled off to complete the thin film matrix substrate.

In the above embodiment, the electrodeposition voltage and the electrodeposition time are set to 10 V and 20 seconds, but the present invention is not limited to this, and any conditions may be used as long as the film thickness is 0.3 μm or more. Further, the drying temperature is 80 ° C. and the drying time is 5 minutes, but the present invention is not limited to this and may be any condition as long as it can cover the above-mentioned side surface.

FIG. 9 is a diagram for explaining the manufacturing process of the thin film transistor matrix substrate of the fifth embodiment, in which (E _S ) shows a cross section and (E _P ) shows a plane. In this figure, 1 is a transparent insulating substrate, 2 is a light-shielding film, 3 is an insulating film, 4 is a transparent conductive film, 5 is a metal film, 6 is a source electrode, 7 is a drain electrode, 8 is a drain bus line, and 9 is a pixel. Electrode, 10
₁ is a channel layer, 11 ₁ is a gate insulating film, 12 ₁ is a gate electrode, 12 ₂ is a gate bus line, 14 is a resin film, 1
Reference numeral 8 is a side surface of the thin film transistor, and 19 is a side surface of a crossing portion of the gate bus line and the drain bus line.

A method of manufacturing the thin film transistor matrix substrate of the fifth embodiment will be described with reference to the manufacturing process explanatory drawings.

The manufacturing process of the thin film transistor matrix in this embodiment is the same as in the fourth embodiment shown in FIG.
To the process described by FIG. _{8 (A S) (A P} ) ~ (D S) (D P), because it is similar except for the following points, the description of this embodiment of the process is incorporated it.

Also in this embodiment, the light shielding film 2 of Cr or the like is formed on the transparent insulating substrate 1 of glass or the like, the insulating film 3 of SiO ₂ is deposited thereon by the plasma CVD method, and the light shielding film 2 is deposited thereon. A transparent conductive film 4 made of ITO and a metal film 5 such as Cr are deposited and patterned to form a source electrode 6, a drain electrode 7, a drain bus line 8 and a pixel electrode 9, and the source electrode 6 and the drain electrode 7 are formed. A semiconductor film made of amorphous silicon (a-Si), a silicon nitride film, and an aluminum film are sequentially stacked and deposited on the metal film 5 between them, and the semiconductor film, the silicon nitride film, and the aluminum film are stacked. Pattern the
Gate electrodes 12 _1, a gate insulating film 11 ₁ and the channel layer 10 _1, and the gate bus line 12 _2.

The thin film transistor matrix substrate to which the above steps have been added is dipped in a resin electrodeposition liquid, and 0 V is applied to the gate electrode 12 ₁ and the gate bus line 12 ₂ , and the drain electrode 7 and the drain bus line 8 are applied.
To the exposed portion of the drain electrode 7 and the drain bus line 8 by applying a DC voltage of 10 V for 20 seconds.
The above resin film 14 is electrodeposited.

When the thin film transistor matrix substrate at this stage is dried in, for example, a nitrogen oven at 80 ° C. for about 5 minutes, the reflowed resin film 14 forms a side surface 18 of the thin film transistor and a side surface 19 at the intersection of the gate bus line and the drain bus line. I will cover it.

The thin film transistor matrix substrate to which the above steps have been added is immersed in an etching solution to remove the exposed metal film 5 by etching. At this time, since the drain electrode 7 and the drain bus line 8 are covered with the resin film, the drain electrode 7 and the drain bus line 8 are not etched, and the gate electrode 12 ₁ and the gate bus line 12 ₂ are formed of a material that is not etched by this etching solution. The metal film 5 on the pixel electrode 9 without affecting the thin film transistor.
Only the pixel electrode 9 formed by the transparent conductive film 4 is etched by etching.
Can be formed.

In this embodiment, particularly when the drain electrode 7 and the drain bus line 8 are formed, the width of the drain electrode 7 is set to 5 μm or more, or the drain electrode 7 is formed.
When the overhang length from the thin film transistor is 5 μm or more, or the width of the drain electrode 7 is 5 μm or more and the overhang length of the drain electrode 7 from the thin film transistor is 5 μm or more, the resin film 14 is formed on the drain electrode 7. Is electrodeposited in a large amount, and when reflowed, the coverage with the resin film 14 on the side surface 18 of the thin film transistor and the side surface 19 at the intersection of the gate bus line and the drain bus line is improved.

In this embodiment, the width of the drain electrode 7 is widened or the length of the drain electrode 7 protruding from the thin film transistor is increased so that the resin is formed on the drain electrode 7 as described above. There is an effect that a large amount of the film 14 is formed, but an effect of reducing the phenomenon that the metal film 5 on the drain electrode 7 disappears due to current concentration in the drain electrode 7 when the resin film 14 is electrodeposited. Also occurs. This is because by setting the width of the drain electrode 7 to 5 μm or more, it is possible to prevent the current density flowing in the drain electrode 7 from decreasing and the current density from particularly increasing at the intersection with the thin film transistor.

According to the above-mentioned fourth and fifth embodiments,
Since the side surface of the semiconductor layer forming the channel layer of the thin film transistor is covered with the resin, it is possible to prevent adsorption of moisture or adhesion of dust or the like to the side surface of the thin film transistor, and to realize a thin film transistor matrix substrate with stable characteristics.

Further, at the intersection of the drain electrode and the gate electrode or the drain bus line and the gate bus line, the space between them is covered with resin, so that the leakage current at this portion is reduced. Also, the film thickness of the resin formed on the drain bus line or the drain electrode is 0.3 μm.
When the thickness is at least m, the side surface of the semiconductor layer forming the channel layer is covered.

Further, by controlling the electrodeposition time, the thickness of the resin film electrodeposited on the drain bus line or the drain electrode can be easily controlled to 0.3 μm or more. Also, by controlling the electrodeposition voltage, the thickness of the resin film electrodeposited on the drain bus line or the drain electrode can be easily controlled to 0.3 μm or more.

Further, by controlling the drying temperature of the resin film, the spread of the reflow width of the formed resin film is controlled so that the side surface of the semiconductor layer forming the channel layer of the thin film transistor can be covered with the optimum film thickness. be able to. Also, by controlling the drying time of the formed resin,
The spread of the reflow width of the resin can be controlled, and the side surface of the semiconductor layer forming the channel can be covered with the optimum film thickness.

Further, by setting the overhanging length of the drain electrode from the side surface of the thin film transistor to be 5 μm or more, the amount of resin deposited on the tip of the drain electrode can be increased, and the semiconductor layer forming the channel can be formed. The side surface can be covered with a sufficient film thickness. Further, by setting the width of the drain electrode to 5 μm or more, the amount of resin formed on the drain electrode can be increased, and the side surface of the semiconductor layer forming the channel can be covered with a sufficient film thickness. can do.

From the above, the reliability of the thin film transistor matrix substrate against moisture or dust is improved,
A thin film transistor matrix substrate having stable characteristics can be realized, and an active matrix type liquid crystal device with excellent characteristics and yield can be manufactured.

(Sixth Embodiment) The first to fifth embodiments described above.
In the thin film transistor matrix substrate described in the examples, after assembling a liquid crystal display device using these thin film transistor matrix substrates, in order to protect the surface of the thin film transistor and the side surface of the laminated film from a contact substance, the entire surface of the thin film transistor matrix substrate is protected. S
A step of forming a protective film made of iN or the like and removing the protective film formed on the pixel electrode has been performed.

FIG. 10 is a diagram showing the structure of a conventional thin film transistor matrix substrate having a protective film, (A _P ).
Shows a plane and (A _S ) shows a cross section. In this figure, 1 is a transparent insulating substrate, 6 is a source electrode, 7 is a drain electrode, 8 is a drain bus line, 9 is a pixel electrode, 1
0 ₁ is a channel layer, 10 ₂ is a contact layer, 11 ₁ is a gate insulating film, 12 ₁ is a gate electrode, 12 ₂ is a gate bus line, 18 is a side surface of a thin film transistor, and 20 is a protective film.

The structure of a conventional thin film transistor matrix substrate and its manufacturing process will be described with reference to this drawing. A source electrode 6, a drain electrode 7, a drain bus line 8 and a pixel electrode 9 are formed on the transparent insulating substrate 1, and then n
A contact layer 10 made of ⁺ a-Si ₂ and the channel layer 1
0 ₁ , a gate insulating film 11 ₁ is formed, and further, a gate electrode 12 ₁ and a gate bus line 12 ₂ extending therefrom are formed.

Then, the resin film 14 is formed on the metal film such as Cr of the drain bus line 8 and the metal film on the pixel electrode 9 is removed by etching to make the pixel electrode 9 transparent. After forming the thin film transistor in this way, a protective film 20 such as silicon nitride is formed on the entire transparent insulating substrate 1 including the side surface 18 of the thin film transistor as a final protective film of these laminated films to protect the pixel electrodes. The membrane 20 was omitted.

However, in the step of removing the protective film 20 on the pixel electrode by the photolithography technique, the protective film 20 remains on the pixel electrode due to the mask shift at the time of exposure,
In order to avoid the disappearance of the protective film 20 in a necessary portion of the thin film transistor, there is a drawback that the dimensional accuracy in the vicinity of the pixel electrode is limited and the aperture ratio cannot be increased.

This example is based on the conventional SiN method.
Instead of the step of forming a final protective film of a thin film transistor such as a film and the step of selectively removing the protective film formed on the pixel electrode by a photolithography process, a voltage is applied to the gate bus line. , The gate bus line and the gate electrode connected to it are electrodeposited by a resin film in a self-aligned manner to cover, thereby forming a final protective film at a necessary position of the thin film transistor in a simple process, It is intended to reduce the production cost, reduce the manufacturing cost, and improve the yield.

FIG. 11 is an explanatory view of the manufacturing process of the thin film transistor matrix substrate of the sixth embodiment, in which (A _P ) shows a plane and (A _S ) shows a cross section. In this figure, 1 is a transparent insulating substrate, 6 is a source electrode, 7 is a drain electrode, 8 is a drain bus line, 9 is a pixel electrode, 10 ₁
Is a channel layer, 10 ₂ is a contact layer, 11 ₁ is a gate insulating film, 12 ₁ is a gate electrode, 12 ₂ is a gate bus line, 14 is a resin film, 14 ₁ is a resin film after reflow, and 18
Is a side surface of the thin film transistor.

The structure of the thin film transistor matrix substrate of the sixth embodiment and its manufacturing process will be described with reference to this drawing.

First Step: A transparent conductive ITO film is formed on the transparent insulating substrate 1 by 600.
Å, and a metal film of Cr or the like having a low resistance of 1500 Å is formed by sputtering, and the laminated film is patterned to form the source electrode 6
And the drain electrode 7 are formed. At this time, the pixel electrode 9 adjacent to the source electrode 6 is not transparent because the metal film is formed on the ITO film.

Second Step Next, a contact layer 10 ₂ made of n ⁺ a-Si is selectively grown, a channel layer 10 ₁ made of a-Si and having a thickness of 500 Å is formed on the contact layer 10 _2, and is formed thereon. A gate insulating film 11 ₁ made of SiN and having a thickness of 3000 Å is formed by a plasma CVD method. Then, an Al film having a thickness of 3000 Å is formed thereon by a sputtering method and patterned to form a gate electrode 12 ₁ and a gate bus line 12 ₂ .

Third Step The thin film transistor matrix substrate that has been subjected to the steps up to this point is dipped in a resin electrodeposition solution, and a voltage of 6 V is applied to the drain bus line 8.
Is applied for 30 seconds to cover and protect the drain electrode 7 and the drain bus line 8 with a resin film (not shown), dry and cure in a nitrogen oven at 120 ° C., and then etch the thin film transistor matrix substrate. The pixel electrode 9 is made transparent by immersing it in the liquid for about 2 minutes and etching the metal film on the pixel electrode 9.

Fourth Step After that, the thin film transistor matrix substrate is again immersed in the resin electrodeposition liquid, and 12 V is applied to the gate bus line 12 ₂ at ₂ V.
It is applied for 0 seconds to electrodeposit the resin film 14 on the gate bus line 12 ₂ and the gate electrode 12 ₁ by about 1 μm.

Incidentally, at the time of this electrodeposition, the gate bus line 12
_This is often seen when a voltage of 20 V or more is applied to 2 but when the resin film is also electrodeposited on the drain bus line 12 ₂ and the pixel electrode 9, the drain bus line 8 in which the potential is floating is set to 0 V. When kept at, the thin film transistor does not turn on, so that no voltage is applied to the pixel electrode 9, and this phenomenon can be prevented. After that, the excess resin film is washed with water and the thin film transistor matrix substrate is heated to 60 ° C.
10 minutes in a nitrogen oven to dry.

The electrodeposited initial resin film 14 is deposited only on the Al gate electrode 12 ₁ and is not deposited on the side surfaces of the gate insulating film 11 ₁ and the channel layer 10 ₁ .
When the drying temperature and the drying time is as described above, the resin film 14 ₁ after reflow covers the side surfaces 18 and the gate bus line and the side surface 19 of the intersection of the drain bus lines of the thin film transistor.

The thin film transistor matrix substrate is subsequently annealed in a nitrogen oven at 140 ° C. for 1 hour to cure the resin film and protect the gate electrode 12 ₁ and the gate bus line 12 ₂ . When the resin film 14 is a photo-curing type, ultraviolet irradiation is performed together with this annealing or in an independent process.

(Seventh Embodiment) FIG. 12 is a diagram for explaining the manufacturing process of the thin film transistor matrix substrate of the seventh embodiment, and (A _P ), (B _P ) show the respective processes. In this figure, 1 is a transparent insulating substrate, 6 is a source electrode, 7 is a drain electrode, 8 is a drain bus line, 9 is a pixel electrode,
10 ₁ is a channel layer, 10 ₂ is a contact layer, 11 ₁ is a gate insulating film, 12 ₁ is a gate electrode, 12 ₂ is a gate bus line, 14 is a resin film, 14 ₁ is a resin film after reflow, and 18 is a thin film transistor. On the side.

The structure of the thin film transistor matrix substrate of the seventh embodiment and its manufacturing process will be described with reference to this drawing.

First Step A transparent conductive ITO film is formed on the transparent insulating substrate 1 by 600
Å, and a metal film of Cr or the like having a low resistance of 1500 Å is formed by sputtering, and the laminated film is patterned to form the source electrode 6
And the drain electrode 7 are formed. At this time, the pixel electrode 9 adjacent to the source electrode 6 is not transparent because the metal film is formed on the ITO film.

Second Step Next, a contact layer 10 ₂ made of n ⁺ a-Si is selectively grown, a channel layer 10 ₁ made of a-Si and having a thickness of 500 Å is formed thereon, and SiN is formed on it. Thickness 3
A 000Å gate insulating film 11 ₁ is formed by a plasma CVD method, and a 3000Å thick Al film is formed thereon by a sputtering method, which is patterned to form a gate electrode 12 ₁ and a gate bus line 12 ₂ .

Third Step The thin film transistor matrix substrate that has been subjected to the steps up to this point is dipped in a resin electrodeposition solution, and a voltage of 6 V is applied to the drain bus line 8.
Is applied for 30 seconds to cover and protect the drain electrode 7 and the drain bus line 8 with a resin film (not shown), followed by drying and curing in a nitrogen oven at 120 ° C.
The thin film transistor matrix substrate is dipped in an etching solution for about 2 minutes to etch the metal film on the pixel electrode 9 to make the pixel electrode 9 transparent.

[0128] Fourth Step Thereafter, the thin film transistor matrix substrate was immersed in again the resin electrodeposition solution, and applying the gate bus line 12 ₂ to a voltage of 15V for about 30 seconds, the gate bus line 12 ₂ and the gate electrode 12 ₁ of The resin film 14 is electrodeposited on the upper surface by about 2.2 μm.

Incidentally, at the time of this electrodeposition, the drain bus line 1
When 2 ₂ is kept at 0 V, the thin film transistor does not turn on, so that no voltage is applied to the pixel electrode 9 and the pixel electrode 9
It is possible to prevent the phenomenon that the resin film 14 is attached to the surface. Then, the excess resin film is washed with water, and the thin film transistor matrix substrate is heated and dried in a nitrogen oven at 60 ° C. for 10 minutes.

In this embodiment, unlike the sixth embodiment, since the resin film 14 is thick, not only the surface of the gate bus line 12 ₂ and the gate electrode 12 ₁ but also a small portion thereof is removed during electrodeposition. , The side surface 18 of the thin film transistor and the side surface 1 at the intersection of the gate bus line and the drain bus line
It is formed so that 9 may be covered.

In this case, the resin film can be cured by directly annealing at 140 ° C. for 1 hour in a nitrogen oven without drying at a low temperature, but at this time, the temperature of the thin film transistor matrix substrate gradually rises. On the way, the thick resin film 14 reflows sufficiently to cover the side surface 18 of the thin film transistor and the side surface 19 at the intersection of the gate bus line and the drain bus line. In this way, the gate bus line 12 ₂ and the gate electrode 12
The protective film of ₁ is formed.

(Eighth Embodiment) The structure and manufacturing method of the thin film transistor matrix substrate of the eighth embodiment will be described with reference to FIG. 12 used for explaining the seventh embodiment.

First Step: A transparent conductive ITO film is formed on the transparent insulating substrate 1 by 600.
Å, and a metal film of Cr or the like having a low resistance of 1500 Å is formed by sputtering, and the laminated film is patterned to form the source electrode 6
And the drain electrode 7 are formed. At this time, the pixel electrode 9 adjacent to the source electrode 6 is not transparent because the metal film is formed on the ITO film.

Second Step Next, a contact layer 10 ₂ made of n ⁺ a-Si is selectively grown, a channel layer 10 ₁ made of a-Si and having a thickness of 500 Å is formed thereon, and SiN is formed on it. Thickness 3
A 000Å gate insulating film 11 ₁ is formed by a plasma CVD method, and a 3000Å thick Al film is formed thereon by a sputtering method, which is patterned to form a gate electrode 12 ₁ and a gate bus line 12 ₂ .

In the seventh embodiment, the drain bus line is
A resin film was electrodeposited on the screen 8 to make the pixel electrode transparent.
However, the voltage applied to the drain bus line 8 during electrodeposition is high.
The gate electrode 12 which is not insulated by the resin film
₁And gate bus line 12 ₂Electric field concentration between
Dust bus line 8 and gate bus line 12₂
Drain bus line 8 near these intersections closest to
In some cases, the dissolution of the metal may proceed and disappear.

Therefore, in such a case, first, the gate bus line 1
The resin film is electrodeposited by applying 10V to 2 ₂ for 20 seconds (the drain bus line may be kept at 0V at this time), washed with water, and then reflowed for 10 minutes in a nitrogen oven at 60 ° C. Are coated with this resin film and then annealed in a nitrogen oven at 140 ° C. for 1 hour to form a resin film 14
To cure. In this case, a voltage of 15 V is applied for 30 seconds to deposit the resin film 14 thickly and reflow during electrodeposition,
After washing with water, it may be annealed directly in an oven at 140 ° C.

Fourth Step After the steps up to this point, the gate electrode 12 ₁ and the gate bus line 12 ₂ are covered with the resin film 14 and insulated while being immersed in the resin electrodeposition liquid, and the drain bus line 8 is supplied with a voltage of 6V.
V is applied for 30 seconds to cover the drain bus line 8 and the drain electrode 7 with a resin film (not shown), which is washed with water and then reflowed in a nitrogen oven at 120 ° C. for 5 minutes to be placed in an etching solution of Cr. Immerse for 2 to 3 minutes to remove Cr on the pixel electrode 9 to make the pixel electrode transparent.

As described above, it is possible to avoid the disappearance of Cr on the drain bus line 8 and to form the thin film transistor matrix substrate in which the gate bus line 12 _{2, the} gate electrode 12 ₁ and the side surface of the laminated film are protected by the resin film.

(Ninth Embodiment) The sixth to eighth embodiments described above.
In the embodiment, a final protective film is formed all at once on the portion of the thin film transistor matrix substrate on which the potential for electrodeposition of the resin is applied, and the thin film transistor or the like is removed from moisture or the like which is contacted during storage or after assembly in the liquid crystal display device. The process of protecting However, although it is necessary to cover the display portion of the thin film transistor matrix substrate with a protective film, it is not desirable to form an insulating protective film on the terminal portion because it is necessary to make electrical connection with a driving IC or the like. .

In this embodiment, when there is a region in the surface of the transparent insulating substrate which is connected to the gate bus line but does not require the resin film to be formed, the resin film is formed only in the necessary region. It is about the method.

FIG. 13 is an explanatory view of the manufacturing process of the thin film transistor matrix substrate of the ninth embodiment. In this figure, 51 is a transparent insulating substrate, 52 is a drain bus line,
53 is a gate bus line, 54 is a gate electrode, 55 is a display portion, and 56 is a terminal portion.

The manufacturing process of the thin film transistor matrix substrate of the ninth embodiment will be described with reference to this drawing. Drain bus line 52, gate bus line 53, and gate electrode 5
The process of forming 4 and making the pixel electrode transparent is the 6th
The description is omitted because it is the same as the process of the embodiment. In addition,
The pixel electrode may be made transparent after the process of this embodiment.

Step 1 When the transparent insulating substrate 51 is dipped in a photosensitive resin electrodeposition liquid and a voltage of 12 V is applied to the gate bus line 53 for 20 seconds, the result shown in FIG.
A photosensitive resin film is electrodeposited on the gate bus line 53, the gate electrode 54 and the terminal portion 56 electrically connected thereto as shown in FIG.

Second Step Next, the transparent insulating substrate 51 is washed with water and the photosensitive resin film is reflowed in a nitrogen oven at 60 ° C. for 10 minutes to cover the side surface of the laminated film under the gate electrode 54. The photosensitive resin film of the terminal portion 56 covered in this step is unnecessary, and it is desirable that the conductor of the terminal portion 56 is exposed in order to connect the tab.

Therefore, the photosensitive resin film on the entire area of the display portion 55 is exposed and developed by masking the terminal portion 56 in the transparent insulating substrate 51 to remove the photosensitive resin film on the terminal portion 56. Removed, 14
Annealing is performed in a nitrogen oven at 0 ° C. for 1 hour to cure the photosensitive resin film on the gate bus line 52 and the gate electrode 54 to form a protective film.

In this way, by exposing and developing the photosensitive resin film, the photosensitive resin film on the terminal portion 56 can be removed while leaving the photosensitive resin film in a necessary portion.

In addition to this, a tape is attached to a portion where it is unnecessary to previously form a resin film on the transparent insulating substrate 51, a resist film for preventing electrodeposition is printed, or
By adopting a method such as adhesion of rubber, it is possible to prevent the portion where the resin film is not required to come into contact with the electrodeposition liquid, and the gate bus line 52 and the gate electrode 54.
A resin film is formed on the transparent insulating substrate 51, and then a tape is peeled off, a printed resist film is peeled off, or a rubber is peeled off to form a protective film on the transparent insulating substrate 51 without using a photolithography process. The resin film can be formed only in the region where the resin is required.

The tape or the like used in this case is preferably a material that can be easily adhered to the substrate and can be easily peeled off from the substrate after the electrodeposition process of the resin film. It is not necessary to use a resin film,
Any resin film having a protective property other than the photosensitive resin film may be used.

By using this electrodeposition method of the resin film, the resin film can be deposited on the conductor in a self-aligning manner, and the complicated patterning process using the photolithography technique becomes unnecessary. That is, according to this embodiment, instead of both the steps of forming the protective film and patterning using the photosensitive resin film, a voltage is applied to the gate bus line and the gate bus line and the gate electrode connected to the gate film are connected to the resin film. Can be formed in a self-aligned manner, the manufacturing process can be simplified, the manufacturing cost can be reduced, and the yield can be improved.

[0150]

As described above, according to the invention described in claims 1 to 13, when the low resistance data bus line in the thin film transistor matrix substrate is formed by the electrodeposition method, the metal facing the semiconductor layer is formed. Since the layer is maintained at a constant potential, the thin film transistor can be kept in an off state at all times, shutting off current to the pixel electrode,
As a result, electrodeposition of the resin film on the pixel electrode can be prevented. Therefore, the metal film on the pixel electrode can be selectively etched to be transparent while the metal film on the drain bus line remains.

Furthermore, by covering the gate electrode and the gate bus line with an insulator in advance, it is possible to prevent the influence of the electric field generated from the gate bus line and the gate electrode during electrodeposition on the drain bus line. Also, since it does not act as the electrode on the electrodeposition side, electrodeposition on the drain bus line can be stabilized and can be performed accurately.

Further, by forming the insulator wider than the gate pattern, it is possible to prevent side etching on the side surface of the thin film transistor when the metal layer on the pixel electrode is removed by etching.

From the above, the resin film can be selectively and electrodeposited on the drain bus line with high precision, the metal film on the pixel electrode can be etched with high selectivity, and at the same time, side etching of the side surface of the thin film transistor does not occur. Therefore, a low-resistance drain bus line can be formed by a simple process, the characteristics of the thin film transistor can be improved, and an inexpensive active matrix liquid crystal display device having excellent characteristics can be manufactured.

Further, according to the invention described in claims 14 to 18, since both sides of the semiconductor layer forming the channel layer of the thin film transistor are covered with the resin film, adsorption of moisture to the side surface of the thin film transistor, or Adhesion of dust and the like can be prevented, and the characteristics of the thin film transistor will not become unstable due to moisture or the like. Further, since the space between the drain electrode and the gate electrode is covered with the insulating material, the leak current does not occur between them, and the thin film transistor having excellent characteristics can be manufactured with high reliability.

The thickness of the resin film electrodeposited on the drain bus line or the drain electrode is 0.3 μm by controlling the electrodeposition time or the electrodeposition voltage when forming the resin film.
By the above, the side surface of the semiconductor layer in which the channel of the thin film transistor is formed is covered.

By controlling the drying temperature or the drying time of the resin film, the reflow width of the resin film after electrodeposition can be expanded and the side surface of the semiconductor layer where the channel of the thin film transistor is formed can be completely covered. Will be able to.

Further, the length of the drain electrode protruding from the side surface of the thin film transistor is set to 5 μm or more, or the width of the drain electrode is set to 5 μm or more, so that the electrodeposition amount of the resin on the drain electrode is increased and the thin film transistor is formed. It becomes possible to completely cover the side surface of the semiconductor layer in which the channel is formed.

Further, since the width of the electrode is wide, the current density flowing through the electrode can be reduced, so that the phenomenon of current concentration on the drain electrode does not occur at the time of electrodeposition of the resin film and the problem that the metal film on the electrode disappears is prevented. To be done. From the above, a thin film transistor having high reliability and stable characteristics can be formed with high yield and by a simple manufacturing process.

Further, in the invention described in claims 19 to 26, the protective film is easily formed on the gate bus line and the gate electrode in a self-aligned manner at a precise position by using the electrodeposition method. In addition, it is possible to easily remove the protective film in the unnecessary portion or prevent the protective film from being generated in the unnecessary portion, so that the manufacturing process can be simplified and the manufacturing cost can be reduced.

[Brief description of drawings]

FIG. 1 is an explanatory view (No. 1) of manufacturing steps of the thin film transistor matrix substrate of the first embodiment, in which (A _S ),
(A _P )-(C _S ), (C _P ) show the cross section and the plane of each step.

FIG. 2 is an explanatory view (No. 2) of manufacturing process of the thin film transistor matrix substrate of the first embodiment, in which (D _S ),
(D _P ), (E _S ), and (E _P ) show the cross section and the plane of each process.

FIG. 3 is an explanatory view (No. 1) of manufacturing steps of the thin film transistor matrix substrate of the second embodiment, in which (A _S ),
(A _P )-(C _S ), (C _P ) show the cross section and the plane of each step.

FIG. 4 is an explanatory view (No. 2) of manufacturing steps of the thin film transistor matrix substrate of the second embodiment, in which (D _S ),
_{(D P) ~ (F S} ), shows (F _P) is sectional and plan for each process.

FIG. 5 is an explanatory view of the manufacturing process of the thin film transistor matrix substrate of the third embodiment.

FIG. 6 is an explanatory view of a manufacturing process of a conventional thin film transistor matrix substrate, including (A _S ), (A _P )-(C _S ),
( _CP ) shows the cross section and plane of each step.

FIG. 7 is an explanatory view (No. 1) of manufacturing process of the thin film transistor matrix substrate of the fourth embodiment, in which (A _S ),
(A _P )-(C _S ), (C _P ) show the cross section and the plane of each step.

FIG. 8 is an explanatory view (No. 2) of manufacturing steps of the thin film transistor matrix substrate of the fourth embodiment, in which (D _S ),
(D _P ), (E _S ), and (E _P ) show the cross section and the plane of each process.

FIG. 9 is a thin film transistor matrix substrate of the fifth embodiment.
FIG. _S) Indicates a cross section, and (E
_P) Indicates a plane.

FIG. 10 is a configuration explanatory view of a thin film transistor matrix substrate having a conventional protective film, (A _P ) showing a plane and (A _S ) showing a cross section.

FIG. 11 is a thin film transistor matrix substrate of the sixth embodiment.
It is a manufacturing process explanatory view of a board, (A _P) Indicates a plane,
(A_S) Indicates a cross section.

FIG. 12 is a thin film transistor matrix substrate of the seventh embodiment.
It is a manufacturing process explanatory view of a board, (A _P), (B_P) Is each work
It shows the degree.

FIG. 13 is an explanatory diagram of the manufacturing process of the thin film transistor matrix substrate of the ninth embodiment.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 transparent insulating substrate 2 light-shielding film 3 insulating film 4 transparent conductive film 5 metal film 6 source electrode 7 drain electrode 8 drain bus line 9 pixel electrode 10 semiconductor layer 10 ₁ channel layer 10 ₂ contact layer 11 silicon nitride film 11 ₁ gate insulating film 12 Aluminum film 12 ₁ Gate electrode 12 ₂ Gate bus line 13 Resist film 14, 14 ₂ Resin film 14 ₁ Resin film after reflow 15 15 Anodized film 16 Counter electrode 17 Power supply 18 Side surface of thin film transistor 19 Gate bus line and drain bus line Side surface of intersection 20 Protective film 51 Transparent insulating substrate 52 Drain bus line 53 Gate bus line 54 Gate electrode 55 Display unit 56 Terminal unit

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Kenichi Oki 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Fujitsu Limited

Claims (27)

[Claims] 1. At least a pixel electrode on an insulating substrate,
A source electrode connected to the pixel electrode, a drain electrode facing the source electrode, a drain bus line connected to the drain electrode, and a semiconductor layer formed on the source electrode and the drain electrode. A thin film transistor matrix substrate including a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, and the gate bus line connected to the gate electrode. A thin film transistor matrix substrate, wherein a side surface of the semiconductor layer forming a channel is covered with a resin film. 2. The thin film transistor matrix substrate according to claim 1, wherein the drain electrode extends from the side surface of the thin film transistor by 5 μm or more. 3. The thin film transistor matrix substrate according to claim 1, wherein the width of the drain electrode is 5 μm or more. 4. At least a pixel electrode on an insulating substrate,
A source electrode connected to the pixel electrode, a drain electrode facing the source electrode, a drain bus line connected to the drain electrode, and a semiconductor layer formed on the source electrode and the drain electrode. A gate electrode in a thin film transistor matrix substrate including a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, and the gate bus line connected to the gate electrode, A thin film transistor matrix substrate, characterized in that a side surface of the gate insulating film below the gate electrode and the semiconductor layer forming a channel of the thin film transistor is covered with a resin film formed on the thin film transistor matrix substrate. 5. An at least pixel electrode on an insulating substrate,
A source electrode connected to the pixel electrode, a drain electrode facing the source electrode, a drain bus line connected to the drain electrode, and a semiconductor layer formed on the source electrode and the drain electrode. A gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, and a gate bus line connected to the gate electrode. The thin film transistor matrix substrate with the light shielding film added below or the storage capacitor layer facing the pixel electrode is immersed in the resin electrodeposition liquid, and the drain bus line is energized to the drain electrode or drain bus line. In a method of manufacturing a thin film transistor matrix substrate in which a resin film is selectively electrodeposited, a metal layer existing in the vicinity of the semiconductor layer is formed into a thin film transistor. Thin film transistor matrix substrate manufacturing method which comprises a step of electrodepositing a resin film on the drain electrode or the drain bus lines and held to the potential turned off. 6. The method according to claim 5, wherein the gate electrode facing the semiconductor layer is held at a potential for turning off the thin film transistor, and the resin film is electrodeposited on the drain electrode or the drain bus line. Method of manufacturing thin film transistor matrix substrate. 7. The resin film is electrodeposited on the drain electrode or the drain bus line by holding the light-shielding film formed under the semiconductor layer at a potential at which the thin film transistor is turned off. A method for manufacturing the described thin film transistor matrix substrate. 8. A method of electrodepositing a resin film on a drain electrode or a drain bus line by holding a storage capacitor layer formed facing a pixel electrode in the vicinity of a semiconductor layer at a potential at which a thin film transistor is turned off. A method of manufacturing a thin film transistor matrix substrate according to claim 5. 9. The resin film is electrodeposited on the drain electrode or the drain bus line with the potential of at least one of the gate electrode, the light shielding film, and the storage capacitor layer set to 0V. 2. A method of manufacturing a thin film transistor matrix substrate as described in 1 above. 10. An insulating substrate, at least a pixel electrode, a source electrode connected to the pixel electrode, a drain electrode facing the source electrode, and a drain bus line connected to the drain electrode. A semiconductor layer formed on the source electrode and the drain electrode, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, and connected to the gate electrode. The thin film transistor matrix substrate including the gate bus line, with a light-shielding film added below the semiconductor layer as necessary, or with the storage capacitor layer facing the pixel electrode is immersed in the resin electrodeposition liquid. In a method of manufacturing a thin film transistor matrix substrate, which energizes a drain bus line to selectively electrodeposit a resin film on a drain electrode or a drain bus line, A method of manufacturing a thin film transistor matrix substrate, comprising a step of covering a gate electrode or a gate bus line with an insulator in advance and electrodepositing a resin film on the drain electrode or the drain bus line. 11. The resin film is electrodeposited on the drain electrode or the drain bus line by covering the gate electrode or the gate bus line with an anodic oxide film.
0. A method of manufacturing a thin film transistor matrix substrate described in 0. 12. The method of manufacturing a thin film transistor matrix substrate according to claim 10, wherein the gate electrode and the gate bus line are covered with a resin film, and the resin film is electrodeposited on the drain electrode or the drain bus line. 13. The thin film transistor matrix according to claim 10, wherein the gate electrode or the gate bus line is covered with an insulator wider than the pattern and a resin film is electrodeposited on the drain electrode or the drain bus line. Substrate manufacturing method. 14. At least a pixel electrode, a source electrode connected to the pixel electrode, a drain electrode facing the source electrode, and a drain bus line connected to the drain electrode on an insulating substrate. A semiconductor layer formed on the source electrode and the drain electrode, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, and connected to the gate electrode. The thin film transistor matrix substrate including the gate bus line, with a light-shielding film added below the semiconductor layer as necessary, or with the storage capacitor layer facing the pixel electrode is immersed in the resin electrodeposition liquid. In a method of manufacturing a thin film transistor matrix substrate, which energizes a drain bus line to selectively electrodeposit a resin film on a drain electrode or a drain bus line, A step of covering a side surface of a semiconductor layer forming a channel of a thin film transistor by making a thickness of a resin film electrodeposited on the drain electrode or the drain bus line 0.3 μm or more and reflowing the resin film. And a method for manufacturing a thin film transistor matrix substrate. 15. The thickness of the resin film electrodeposited on the drain electrode or the drain bus line is set to 0.3 μm or more by controlling the time for electrodeposition of the resin film. A method for manufacturing the described thin film transistor matrix substrate. 16. The thickness of the resin film electrodeposited on the drain electrode or the drain bus line is set to 0.3 μm or more by controlling the voltage when electrodepositing the resin film. 15. A method of manufacturing a thin film transistor matrix substrate as described in 14. 17. A resin film electrodeposited on a drain electrode or a drain bus line is reflowed by controlling a drying temperature of the resin film so as to cover a side surface of a semiconductor layer forming a channel of a thin film transistor. The method of manufacturing a thin film transistor matrix substrate according to claim 14, wherein the thin film transistor matrix substrate is manufactured. 18. By controlling the drying time of the resin film, the resin film electrodeposited on the drain electrode or the drain bus line is reflowed to cover the side surface of the semiconductor layer forming the channel of the thin film transistor. The method of manufacturing a thin film transistor matrix substrate according to claim 14, wherein the thin film transistor matrix substrate is manufactured. 19. An insulating substrate, at least a pixel electrode, a source electrode connected to the pixel electrode, a drain electrode facing the source electrode, and a drain bus line connected to the drain electrode. A semiconductor layer formed on the source electrode and the drain electrode, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, and connected to the gate electrode. In a method for manufacturing a thin film transistor matrix substrate including a gate bus line, a side surface of a semiconductor layer forming a channel of a thin film transistor and a gate insulating film under the gate electrode by reflowing a resin film formed on the gate electrode. A method of manufacturing a thin film transistor matrix substrate, comprising: 20. The thin film transistor matrix according to claim 19, wherein the gate insulating film under the gate electrode and the resin film covering the side surface of the semiconductor layer forming the channel of the thin film transistor are cured by light or heat. Substrate manufacturing method. 21. A side surface of a semiconductor layer forming a gate insulating film under a gate electrode and a channel of a thin film transistor by electrodepositing a resin film to a thickness of 0.5 μm or more and reflowing the resin film in a lateral direction. The method of manufacturing a thin film transistor matrix substrate according to claim 19, further comprising: 22. Before the resin film electrodeposited on the gate electrode is hardened by heat, the resin film is reflowed by maintaining the temperature environment lower than the hardening temperature to reflow the resin film. 20. The method of manufacturing a thin film transistor matrix substrate according to claim 19, further comprising covering a side surface of a semiconductor layer forming a channel. 23. The thin film transistor according to claim 19, wherein the drain electrode and the drain bus line are maintained at a constant voltage in the step of forming the resin film on the gate electrode and the gate bus line by an electrodeposition method. Matrix substrate manufacturing method. 24. A resin film is formed on the drain electrode and the drain bus line by an electrodeposition method, and a resin film is formed on the gate electrode and the gate bus line by an electrodeposition method, and then formed on the pixel electrode. 20. The method of manufacturing a thin film transistor matrix substrate according to claim 19, wherein the pixel electrode is made transparent by removing the existing metal film by etching. 25. The thin film transistor according to claim 24, wherein the gate electrode and the gate bus line are maintained at a constant voltage in the step of forming the resin film on the drain electrode and the drain bus line by an electrodeposition method. Matrix substrate manufacturing method. 26. At least a pixel electrode, a source electrode connected to the pixel electrode, a drain electrode facing the source electrode, and a drain bus line connected to the drain electrode on an insulating substrate. A semiconductor layer formed on the source electrode and the drain electrode, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, and connected to the gate electrode. In the method of manufacturing a thin film transistor matrix substrate including a gate bus line, a photosensitive resin film is electrodeposited on at least a part of the drain electrode, the drain bus line, the gate electrode, and the gate bus line, and the photosensitive resin film is selectively formed. Of a thin film transistor matrix substrate, which comprises a step of removing an unnecessary portion of the photosensitive resin film by exposing to light and developing. Build method. 27. At least a pixel electrode, a source electrode connected to the pixel electrode, a drain electrode facing the source electrode, and a drain bus line connected to the drain electrode on an insulating substrate. A semiconductor layer formed on the source electrode and the drain electrode, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, and connected to the gate electrode. In a method of manufacturing a thin film transistor matrix substrate including a gate bus line, a portion not requiring a resin film is adhered and covered with tape, resist printing, rubber or the like to prevent contact with a resin electrodeposition liquid. , A drain electrode, a drain bus line, a gate electrode, and a step of forming a resin film on at least a part of the gate bus line. Method of manufacturing transistor matrix substrate.