JPH08195411A - Power module - Google Patents
Power moduleInfo
- Publication number
- JPH08195411A JPH08195411A JP514695A JP514695A JPH08195411A JP H08195411 A JPH08195411 A JP H08195411A JP 514695 A JP514695 A JP 514695A JP 514695 A JP514695 A JP 514695A JP H08195411 A JPH08195411 A JP H08195411A
- Authority
- JP
- Japan
- Prior art keywords
- main current
- power module
- chip
- fusing
- insulating container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
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- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、パワースイッチング素
子と溶断部材を同一絶縁容器内に収納したパワーモジュ
ール素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power module element in which a power switching element and a fusing member are housed in the same insulating container.
【０００２】[0002]
【従来の技術】従来、電力変換装置に使用されるパワー
スイッチング素子として、図１０および図１１に示すよ
うに構成されたＩＧＢＴ（絶縁ゲートバイポーラトラン
ジスタ）がある。これは、パワーコレクタ端子（入力主
電流端子）１とパワーエミッタ端子（出力主電流端子）
２を備え、かつ駆動用信号端子としてのゲート３および
エミッタ２Ａを備えている。2. Description of the Related Art Conventionally, as a power switching element used in a power conversion device, there is an IGBT (Insulated Gate Bipolar Transistor) configured as shown in FIGS. This is a power collector terminal (input main current terminal) 1 and a power emitter terminal (output main current terminal)
2, and a gate 3 and an emitter 2A as a driving signal terminal.
【０００３】図１２はこのような構成のＩＧＢＴを使用
した直流ー直流コンバータの例として直流モータを駆動
するＨ型ブリッジ回路を示している。すなわち、パワー
スイッチング素子４〜７がＨ型ブリッジ回路に構成さ
れ、この中間点に直流モータ８が接続されている。一
方、Ｈ型ブリッジ回路の上位および下位には直流電源９
を接続することによって直流電力を直流モータ８に供給
できる。FIG. 12 shows an H-type bridge circuit for driving a DC motor as an example of a DC-DC converter using an IGBT having such a structure. That is, the power switching elements 4 to 7 are configured in an H-type bridge circuit, and the DC motor 8 is connected to the intermediate point. On the other hand, a DC power source 9 is provided above and below the H-type bridge circuit.
It is possible to supply DC power to the DC motor 8 by connecting the.
【０００４】図１２の動作としては、素子４，７を公知
のＰＷＭ（パルス幅変調）制御を行うことにより、直流
モータ８に所定極性の電圧が供給され、直流モータ８は
正回転する。直流モータ８を逆回転させるには、素子
５，６をＰＷＭ制御することにより、直流モータ８が逆
回転する。In the operation shown in FIG. 12, the elements 4 and 7 are subjected to the well-known PWM (pulse width modulation) control so that a voltage of a predetermined polarity is supplied to the DC motor 8 and the DC motor 8 rotates in the positive direction. In order to rotate the DC motor 8 in the reverse direction, PWM control of the elements 5 and 6 causes the DC motor 8 to rotate in the reverse direction.
【０００５】図１２の素子４，５のパワーコレクタ端子
１には、それぞれ速断ヒューズ１０，１１を接続し、同
一アームの上下の素子４，６または５，７が同時に導通
する誤動作により生ずる過電流により速断ヒューズ１
０，１１が溶断するようになっている。Fast-acting fuses 10 and 11 are connected to the power collector terminals 1 of the elements 4 and 5 in FIG. 12, respectively, and an overcurrent caused by a malfunction in which the upper and lower elements 4, 6 or 5, 7 of the same arm are simultaneously conducted. Fast-acting fuse 1
0 and 11 are designed to melt.
【０００６】[0006]
【発明が解決しようとする課題】ところが、図１２の従
来のコンバータでは相単位で考察すると、素子４と７が
導通状態（飽和状態）の時に、ノイズ等の外来サージに
より素子の導通制御部が誤動作し、素子５または６に駆
動信号が送られると、同一アームの上下素子が導通状態
となり、直流電源９の出力が短絡状態となり、過電流が
流れる。However, in the conventional converter of FIG. 12, considering the phase units, when the elements 4 and 7 are in the conductive state (saturated state), the conduction control section of the element is affected by an external surge such as noise. When it malfunctions and a drive signal is sent to the element 5 or 6, the upper and lower elements of the same arm become conductive, the output of the DC power supply 9 becomes short-circuited, and an overcurrent flows.
【０００７】この場合直流電源９とコンバータを接続す
る主回路ケーブルは、素子４〜７で決まるコンバータ容
量に相応した導体で構成されるのに対し、素子４〜７の
内部インピーダンスが大きいことから素子４〜７に過電
流が流れた場合には素子４〜７の内部が局部的発熱を来
し、場合によっては素子４〜７自体が爆発、発煙を起こ
すおそれがある。In this case, the main circuit cable connecting the DC power source 9 and the converter is composed of a conductor corresponding to the converter capacity determined by the elements 4 to 7, whereas the internal impedance of the elements 4 to 7 is large, so When an overcurrent flows through 4 to 7, the inside of the elements 4 to 7 may locally generate heat, and in some cases, the elements 4 to 7 themselves may explode and emit smoke.
【０００８】また、速断ヒューズ１０，１１の溶断によ
り素子の爆発、発煙を未然に防ぐことができるが、市販
の標準の速断ヒューズ１０，１１を用いて全ての素子４
〜７の容量に応じて保護協調をとることは難しく、かつ
高価となる欠点を有する。Further, the blowout of the fast-acting fuses 10 and 11 can prevent the elements from exploding and smoking, but all the elements 4 can be manufactured by using the commercially available standard fast-acting fuses 10 and 11.
It is difficult and expensive to take protection coordination depending on the capacity of ~ 7.
【０００９】一方、図１２の回路を電気自動車に応用す
る場合には、素子４〜７のうち例えば素子４のみがパン
クしたとき、素子４に直列に接続されている同一アーム
の素子６が共に断線状態となるため、直流モータ８を運
転することできず、電気自動車を例えば安全地帯まで移
動することができない。On the other hand, when the circuit of FIG. 12 is applied to an electric vehicle, for example, when only the element 4 out of the elements 4 to 7 is punctured, the elements 6 of the same arm connected in series to the element 4 are together. Since the disconnection occurs, the DC motor 8 cannot be operated and the electric vehicle cannot be moved to, for example, a safety zone.
【００１０】さらに、速断ヒューズ１０，１１が素子４
〜７の外部に設置されることから、速断ヒューズ１０，
１１相互間に発生するリングアークの発生を防止するた
め、所定の隔離距離を確保しなければならないので、図
１２の直流モータ８および直流電源９を除く回路全体を
小形化する上で支障がある。Further, the fast-acting fuses 10 and 11 are the elements 4
Since it is installed outside of ~ 7,
In order to prevent the generation of ring arcs generated between each other, it is necessary to secure a predetermined separation distance, which is an obstacle to downsizing the entire circuit except the DC motor 8 and the DC power supply 9 in FIG. .
【００１１】本発明は、パワースイッチング素子に過電
流が流れても、発煙、爆発を防ぐことができ、また不良
のパワースイッチング素子の早期発見が可能となるパワ
ーモジュール素子を提供することを目的とする。It is an object of the present invention to provide a power module element capable of preventing smoke and explosion even when an overcurrent flows through the power switching element and enabling early detection of a defective power switching element. To do.
【００１２】[0012]
【課題を解決するための手段】前記目的を達成するた
め、請求項１に対応する発明は、絶縁容器内に少なくと
も１個のパワースイッチング素子チップと、この各チッ
プの電極に電気的に接続する入力および出力主電流端子
を収納し、かつこの入力および出力主電流端子の一部が
前記絶縁容器外部に露出するように構成したパワーモジ
ュール素子において、前記絶縁容器内であって前記入力
および出力主電流端子のいずれか一方、または前記各チ
ップの電極と前記入力および出力主電流端子のいずれか
一方の接続点間に前記入力および出力主電流端子に流れ
る主電流の値に対応した溶断特性を決定可能な溶断部材
を備えたことを特徴とするパワーモジュール素子であ
る。In order to achieve the above object, the invention according to claim 1 electrically connects to at least one power switching element chip and an electrode of each chip in an insulating container. In a power module element configured to accommodate input and output main current terminals and have a part of the input and output main current terminals exposed to the outside of the insulating container, the input and output main current terminals in the insulating container Determines the fusing characteristic corresponding to the value of the main current flowing through the input and output main current terminals between the connection point of either one of the current terminals or the electrode of each chip and one of the input and output main current terminals. It is a power module element having a fusing member capable of cutting.
【００１３】前記目的を達成するため、請求項２に対応
する発明は、前記溶断部材の収納されている部分と前記
チップの収納されている部分を仕切り体で仕切ったこと
を特徴とする請求項１記載のパワーモジュール素子であ
る。In order to achieve the above object, the invention according to claim 2 is characterized in that a portion for accommodating the fusing member and a portion for accommodating the chip are partitioned by a partition body. The power module element according to 1.
【００１４】前記目的を達成するため、請求項３に対応
する発明は、前記溶断部材の収納されている部分と前記
チップの収納されている部分を仕切り体で仕切り、前記
溶断部材の収納されている部分に溶断部材の溶断によっ
て生ずるアークを消弧する消弧材を充填したことを特徴
とする請求項１記載のパワーモジュール素子である。In order to achieve the above object, the invention according to claim 3 is such that a portion for accommodating the fusing member and a portion for accommodating the chip are partitioned by a partition body, and the fusing member is accommodated. The power module element according to claim 1, wherein an arc-extinguishing material that extinguishes an arc generated by the fusing of the fusing member is filled in the existing portion.
【００１５】前記目的を達成するため、請求項４に対応
する発明は、前記溶断部材は板ヒューズであり、この板
ヒューズの少なくとも一部に、溶断特性を決定するため
の切り込みを有していることを特徴とする請求項１記載
のパワーモジュール素子である。In order to achieve the above object, in the invention corresponding to claim 4, the fusing member is a plate fuse, and at least a part of the plate fuse has a cut for determining a fusing characteristic. It is a power module element of Claim 1 characterized by the above-mentioned.
【００１６】前記目的を達成するため、請求項５に対応
する発明は、絶縁容器内に少なくとも１個のパワースイ
ッチング素子チップと、この各チップの電極に電気的に
接続する入力および出力主電流端子を収納し、かつこの
入力および出力主電流端子の一部が外部に露出するよう
に構成したパワーモジュール素子において、前記絶縁容
器内であって前記チップの電極と前記入力および出力主
電流端子を電気的に接続し、少なくとも一部に溶断部を
有する複数のボンディングワイヤと、前記絶縁容器内で
あって前記ボンディングワイヤを部分的に支持し該ボン
ディングワイヤの放熱を目的とする少なくとも１個の中
継パッドとを備え、前記ボンディングワイヤの本数、太
さ、長さの少なくともいずれか一方ならびに前記中継パ
ッドの個数、前記中継パッドの表面積の少なくとも一方
を調整することにより前記ボンディングワイヤの溶断部
の溶断特性を決定するようにしたことを特徴とするパワ
ーモジュール素子である。To achieve the above object, the invention according to claim 5 provides at least one power switching element chip in an insulating container, and input and output main current terminals electrically connected to the electrodes of each chip. And a part of the input and output main current terminals are exposed to the outside in a power module element, wherein the electrodes of the chip and the input and output main current terminals are electrically connected in the insulating container. Bonding wires that are electrically connected to each other and have a fusing part at least in part, and at least one relay pad for partially supporting the bonding wires in the insulating container and radiating the bonding wires And the number of the bonding wires, the thickness, at least one of the length and the number of the relay pad, the A power module element characterized in that so as to determine the fusing characteristics of the fusion portion of the bonding wire by adjusting at least one of the surface area of the joint pads.
【００１７】前記目的を達成するため、請求項６に対応
する発明は、溶断部材は主電流の溶断特性により決まる
ヒューズからなり、このヒューズに並列に該ヒューズが
溶断したこと前記絶縁容器外部で検出できるように構成
した溶断検出手段を備えたことを特徴とする請求項１記
載のパワーモジュール素子である。In order to achieve the above object, in the invention corresponding to claim 6, the fusing member comprises a fuse determined by the fusing characteristic of the main current, and it is detected outside the insulating container that the fuse is blown in parallel with the fuse. The power module element according to claim 1, further comprising a fusing detection means configured so as to be capable.
【００１８】前記目的を達成するため、請求項７に対応
する発明は、複数のチップを備え、各チップ毎に仕切り
体により分離隔離したことを特徴とする請求項１または
請求項５記載のパワーモジュール素子である。In order to achieve the above-mentioned object, the invention according to claim 7 is provided with a plurality of chips, and each chip is separated and isolated by a partition body. It is a module element.
【００１９】[0019]
【作用】請求項１〜請求項７に対応する発明によれば、
絶縁容器内にパワースイッチング素子のチップに対応し
た溶断部材が配設されているので、パワースイッチング
素子のチップに過電流が流れても溶断部材が溶断するこ
とから、発煙、爆発を防ぐことができ、かつ全体を小形
化することが可能になる。According to the inventions corresponding to claims 1 to 7,
Since the fusing member corresponding to the chip of the power switching element is arranged in the insulating container, even if an overcurrent flows to the chip of the power switching element, the fusing member melts and prevents smoke and explosion. And, it becomes possible to miniaturize the whole.
【００２０】また、請求項６に対応する発明によれば、
内部に収納されているヒューズの溶断を検出する溶断検
出手段を備えているので、不良パワースイッチング素子
を早期に発見できる。According to the invention corresponding to claim 6,
Since the blowout detecting means for detecting blowout of the fuse housed inside is provided, a defective power switching element can be found early.
【００２１】[0021]
【実施例】以下、本発明の実施例について図面を参照し
て説明する。 ＜第１実施例＞図１〜図４に示すように、パワーモジュ
ール素子は容器本体１２とカバー１８からなる絶縁容器
内に後述するパワーモジュール素子本体を収納したもの
である。Embodiments of the present invention will be described below with reference to the drawings. <First Embodiment> As shown in FIGS. 1 to 4, a power module element is a power module element body, which will be described later, housed in an insulating container composed of a container body 12 and a cover 18.
【００２２】パワーモジュール素子本体は、熱伝導性の
良い金属例えば銅からなる金属ベース１２ａと、金属ベ
ース１２ａの一方の面の周縁部に配設された絶縁枠１２
ｂとからなる容器本体１２内に、絶縁材１３、パワース
イッチング素子のチップ１４，１５、主電流端子（パワ
ー端子）１６，１７、ゲル１９、板ヒューズ２０〜２
２、２３〜２５、ボンディングワイヤ２６，２７、消弧
剤２８からなっている。The power module element body comprises a metal base 12a made of a metal having a good thermal conductivity, for example, copper, and an insulating frame 12 arranged on the peripheral edge of one surface of the metal base 12a.
Insulating material 13, chips 14 and 15 of power switching elements, main current terminals (power terminals) 16 and 17, gel 19, and plate fuses 20-2
2, 23 to 25, bonding wires 26 and 27, and an arc extinguishing agent 28.
【００２３】容器本体１２の開口部に仕切り板付カバー
１８を設けて絶縁容器内部を密封したものである。この
場合の仕切り板付カバー１８と、絶縁枠１２ｂはモール
ド絶縁材料でモールドしてできたものである。A cover 18 with a partition plate is provided at the opening of the container body 12 to seal the inside of the insulating container. In this case, the cover with partition plate 18 and the insulating frame 12b are formed by molding with a mold insulating material.
【００２４】以下、これについて具体的に説明する。す
なわち、金属ベース１２ａの上面に絶縁材１３を配設
し、絶縁材１３の上面にパワースイッチング素子のチッ
プ１４，１５例えばＩＧＢＴのチップを互いに間隔を存
して配設する。また、金属ベース１２ａの上面であって
チップ１４，１５の一端側に断面Ｌ字状の主電流端子１
６を配設し、かつチップ１４，１５の他端側に断面Ｌ字
状の主電流端子１７を配設する。そして、チップ１４，
１５の極と主電流端子１６の間には、各々一部に切り込
みｃｔを有し、主電流の値によって溶断特性が決まる速
断ヒューズすなわち板ヒューズ２０〜２２、２３〜２５
をそれぞれ互いに等間隔を存して電気的に接続する。主
電流端子１７とチップ１４，１５の間はボンディングワ
イヤ２７により電気的に接続する。ボンディングワイヤ
２６，２７は、全体が例えばアルミニウム線からなって
いる。This will be specifically described below. That is, the insulating material 13 is arranged on the upper surface of the metal base 12a, and the chips 14 and 15 of the power switching element, for example, the chips of the IGBT are arranged on the upper surface of the insulating material 13 at a distance from each other. Further, the main current terminal 1 having an L-shaped cross section is provided on the upper surface of the metal base 12a and on one end side of the chips 14 and 15.
6, and a main current terminal 17 having an L-shaped cross section is provided on the other end side of the chips 14 and 15. And the chip 14,
A fast cut fuse, that is, a plate fuse 20-22, 23-25, which has a cut ct in a part between the pole of 15 and the main current terminal 16, and whose fusing characteristic is determined by the value of the main current.
Are electrically connected to each other at equal intervals. A bonding wire 27 electrically connects the main current terminal 17 and the chips 14 and 15. The bonding wires 26, 27 are entirely made of, for example, aluminum wires.
【００２５】そして、仕切り板１８ａとカバー１８ｂを
一体にした仕切り板付カバー１８を、素子容器１２内に
仕切り板１８ａの挿入させて開口部にカバー１８ｂを固
定することによって、チップ１４，１５の部屋と板ヒュ
ーズ２０〜２５の部屋に仕切る。この場合、チップ１
４，１５の収納されている部屋にはそれぞれゲル１９を
充填してあり、これによりボンディングワイヤ２６，２
７に振動が加わった場合の振動を抑制する。また、板ヒ
ューズ２０〜２５の部屋には消弧剤２８を充填してあ
り、これにより板ヒューズ２０〜２５が溶断した際に生
ずるアークを消弧する。Then, the cover 18 with a partition plate, in which the partition plate 18a and the cover 18b are integrated, is inserted into the element container 12 and the cover 18b is fixed to the opening, whereby the chambers of the chips 14 and 15 are accommodated. And divide it into a room of plate fuses 20-25. In this case, chip 1
Gels 19 are filled in the chambers containing the bonding wires 26, 2 respectively.
Vibration is suppressed when vibration is applied to 7. The chamber of the plate fuses 20 to 25 is filled with an arc extinguishing agent 28 to extinguish the arc generated when the plate fuses 20 to 25 are blown.
【００２６】このように板ヒューズ２０〜２２、２３〜
２５が素子容器１２とカバー１８内に、パワースイッチ
ング素子のチップ１４，１５にそれぞれ対応して配設さ
れているので、主電流端子１６，１７間に過電流が所定
時間流れたとき板ヒューズ２０〜２２、２３〜２５のい
ずれかが溶断することから、パワーモジュール素子自体
の発煙、爆発を防止でき、また板ヒューズ２０〜２２、
２３〜２５をを含んだ全体の構成を従来に比べて小形化
することができる。Thus, the plate fuses 20-22, 23-
Since 25 are arranged in the element container 12 and the cover 18 corresponding to the chips 14 and 15 of the power switching element, respectively, when the overcurrent flows between the main current terminals 16 and 17 for a predetermined time, the plate fuse 20 ~ 22 and 23 ~ 25 are blown, the smoke and explosion of the power module element itself can be prevented, and the plate fuses 20 ~ 22,
The entire configuration including 23 to 25 can be made smaller than the conventional one.
【００２７】また、板ヒューズ２０〜２２、２３〜２５
は、それぞれ切り込みｃｔが形成されているので、チッ
プ１４，１５の容量に応じて、切り込み量を大きくする
ことにより、主電流の値が小さくても溶断し、また逆に
切り込み量を小さくすることで、主電流の値が大きくて
も溶断する。さらに、板ヒューズの切り込み量を一定と
し、本数を変えることで溶断特性を変えることができ
る。この結果、全てのパワースイッチング素子のチップ
１４，１５の電流容量にそれぞれ対応した保護協調をと
ることが容易で、比較的に安価に行える。Further, the plate fuses 20 to 22, 23 to 25
Since each of the cuts ct is formed, the cut amount is increased according to the capacities of the chips 14 and 15 so as to melt even if the value of the main current is small, and conversely reduce the cut amount. Therefore, even if the value of the main current is large, it melts. Further, the fusing characteristics can be changed by keeping the cut amount of the plate fuse constant and changing the number thereof. As a result, it is easy to take protection coordination corresponding to the current capacities of the chips 14 and 15 of all the power switching elements, and the cost can be relatively low.
【００２８】そして、以上述べた実施例のパワーモジュ
ール素子を複数個組合わせて電気自動車に使用した場合
には、パワースイッチング素子の一部がパンクしてもそ
の部分の板ヒューズが溶断することから、そのパンクし
たパワースイッチング素子のみを除いたパワースイッチ
ング素子により安全地帯まで移動運転を行うことが可能
となる。When a plurality of power module elements according to the above-described embodiments are combined and used in an electric vehicle, even if a part of the power switching element is flat, the plate fuse in that part is blown. The power switching element except for the punctured power switching element enables the mobile operation to the safe area.
【００２９】＜第２実施例＞図５は、前述の第１実施例
で用いた板ヒューズ２０〜２５の代わりに、ボンディン
グワイヤ２６，２７と同様に、部分的に溶断部を有する
ボンディングワイヤ３２〜３７を設け、ボンディングワ
イヤ３２〜３７をそれぞれ中継パッド２９〜３１を経由
してパワースイッチング素子１５の極に接続したもので
ある。<Second Embodiment> FIG. 5 shows a bonding wire 32 having a partially blown portion, like the bonding wires 26 and 27, instead of the plate fuses 20 to 25 used in the first embodiment. To 37, and the bonding wires 32 to 37 are connected to the poles of the power switching element 15 via the relay pads 29 to 31, respectively.
【００３０】ここで、用いる中継パッド２９〜３１とし
ては、定常的には放熱作用がある熱伝導性の良好な金属
材料からなるブロックを用いる。また過渡的にはボンデ
イグワイヤ３２〜３７の溶断部が高温になると溶断する
ことから、速断ヒューズの切り込みと同じ作用する。Here, as the relay pads 29 to 31 used, blocks made of a metal material having a good heat conductivity and having a heat radiating function are used. Further, transiently, the fusing parts of the bond wires 32 to 37 are blown at a high temperature, so that the same action as the cutting of the fast-acting fuse is achieved.
【００３１】この場合、ボンデイグワイヤ３２〜３７の
中間部分が中継パッド２９〜３１に熱的に接続されてい
るので、ボンデイグワイヤ３２〜３７の放熱効果が良好
であり、この分電流容量をあげることができるばかりで
なく、ボンデイグワイヤ３２〜３７の溶断部の溶断特性
は、ボンデイグワイヤの本数、太さ、長さの少なくとも
一つを変えることにより決めることが可能であり、第１
実施例と同様な作用効果が得られる。In this case, since the intermediate portions of the bond wires 32 to 37 are thermally connected to the relay pads 29 to 31, the heat dissipation effect of the bond wires 32 to 37 is good, and the current capacity can be increased accordingly. Not only that, the fusing characteristics of the fusing parts of the bond wires 32-37 can be determined by changing at least one of the number, the thickness and the length of the bond wires.
The same operation and effect as the embodiment can be obtained.
【００３２】＜第３実施例＞図６は、図５の実施例で設
けた中継パッド２９〜３１以外に、中継パッド３８〜４
０を追加し、これらを中継パッド２９〜３１に対してそ
れぞれ直列に設けたものである。<Third Embodiment> FIG. 6 shows relay pads 38 to 4 in addition to the relay pads 29 to 31 provided in the embodiment of FIG.
0 is added and these are provided in series with the relay pads 29 to 31, respectively.
【００３３】この場合もボンデイグワイヤ３２〜３７は
中継パッド２９〜３１および３８〜４０にそれぞれ熱的
に接続されているので、この実施例は第２実施例よりも
ボンデイグワイヤ３２〜３７の放熱効果が上がるので、
さらに電流容量を上げることができ、第１実施例と同様
な作用効果が得られる。Also in this case, since the bond wires 32 to 37 are thermally connected to the relay pads 29 to 31 and 38 to 40, respectively, in this embodiment, the heat radiation effect of the bond wires 32 to 37 is higher than that in the second embodiment. So
Further, the current capacity can be increased, and the same effect as that of the first embodiment can be obtained.
【００３４】＜第４実施例＞図７は、図５の実施例で設
けた中継パッド２９〜３１を、一個の中継パッド４１に
代えたものであり、この実施例も第２実施例と同様にボ
ンデイグワイヤ３２〜３７、５１，５２の中間部分は中
継パッド４１に熱的に接続されている。このため、第２
実施例と同様な作用効果が得られる。<Fourth Embodiment> FIG. 7 is a diagram in which the relay pads 29 to 31 provided in the embodiment of FIG. 5 are replaced by a single relay pad 41, and this embodiment is the same as the second embodiment. The intermediate portions of the bond wires 32-37, 51, 52 are thermally connected to the relay pad 41. Therefore, the second
The same operation and effect as the embodiment can be obtained.
【００３５】＜第５実施例＞図８は、図１の実施例の主
電流端子１６とパワースイッチング素子のチップ１４の
間、図１の実施例の主電流端子１６とパワースイッチン
グ素子のチップ１５の間にそれぞれ電圧検出手段例えば
フォトカプラ４２と抵抗４３からなる回路およびフォト
カプラ４４と抵抗４５からなる回路を電気的に並列に接
続したものである。<Fifth Embodiment> FIGS. 8A and 8B show a relation between the main current terminal 16 and the power switching element chip 14 in the embodiment of FIG. 1, and the main current terminal 16 and the power switching element chip 15 in the embodiment of FIG. A voltage detecting means, for example, a circuit including a photocoupler 42 and a resistor 43 and a circuit including a photocoupler 44 and a resistor 45 are electrically connected in parallel between the two.
【００３６】フォトカプラ４２は、フォトダイオード４
２ａとフォトトランジスタ４２ｂからなり、この一次側
すなわちチップ１４側にフォトダイオード４２ａを接続
し、その二次側は図示しない断線報知器に接続したもの
である。The photocoupler 42 is the photodiode 4
2a and a phototransistor 42b. The photodiode 42a is connected to the primary side, that is, the chip 14 side, and the secondary side is connected to a disconnection alarm (not shown).
【００３７】同様に、フォトカプラ４４は、フォトダイ
オード４４ａとフォトトランジスタ４４ｂからなり、こ
の一次側すなわちチップ１５側にフォトダイオード４４
ａを接続し、その二次側は図示しない断線報知器に接続
したものである。Similarly, the photocoupler 44 comprises a photodiode 44a and a phototransistor 44b, and the photodiode 44 is provided on the primary side, that is, the chip 15 side.
a is connected, and its secondary side is connected to a disconnection alarm (not shown).
【００３８】このように構成することにより、例えばチ
ップ１４側に接続されている板ヒューズ２０〜２２に過
電流が流れて板ヒューズ２０〜２２が溶断すると、主電
流端子１６とチップ１４の電極間に電圧が発生し、フォ
トカプラ４２の一次側のフォトダイオード４２ａに電流
が流れて発光し、これにより二次側のフォトトランジス
タ４２ｂがオン状態となることから、図示しない断線報
知器が動作し、板ヒューズ２０〜２２の溶断状態を報知
することができ、これにより不良のパワースイッチング
素子の早期発見に役立つ。また、フォトカプラ４２の二
次側の出力をパワースイッチング素子の制御装置等に入
力させことにより、電力変換装置の保護動作に役だてる
ことが可能になる。With this configuration, for example, when an overcurrent flows in the plate fuses 20 to 22 connected to the chip 14 side and the plate fuses 20 to 22 are blown, the main current terminal 16 and the electrode of the chip 14 are separated from each other. When a voltage is generated in the photocoupler 42, a current flows through the photodiode 42a on the primary side of the photocoupler 42 to emit light, which turns on the phototransistor 42b on the secondary side. The blown state of the plate fuses 20 to 22 can be notified, which is useful for early detection of defective power switching elements. Further, by inputting the output on the secondary side of the photocoupler 42 to the control device of the power switching element or the like, it becomes possible to contribute to the protection operation of the power conversion device.
【００３９】以上述べた作用効果は、チップ１５側に接
続されている板ヒューズ２３〜２５に過電流が流れて板
ヒューズ２３〜２５が溶断してフォトカプラ４４が動作
した場合も同様である。The above-described operational effects are the same when the plate fuses 23 to 25 connected to the chip 15 side are overheated and the plate fuses 23 to 25 are blown to operate the photocoupler 44.
【００４０】＜第６実施例＞図９に示すように、同一絶
縁容器内に配設される主電流端子１６，１７の間に、パ
ワースイッチング素子のチップ１４，１５を多数個並設
し、チップ１４，１５の極と主電流端子１７の間を複数
のボンデイグワイヤ５５により電気的に接続し、チップ
１４，１５の極と主電流端子１６の間を、それぞれ溶断
部を有するボンデイグワイヤ３２，３４，３６，５１，
５４により電気的に接続し、このボンデイグワイヤ３
２，３４，３６，５１，５４を仕切り板１８ｃにより各
パワースイッチング素子毎に分離したものである。この
場合、ボンデイグワイヤ３２，３４，３６，５１，５４
の中間部は、前述の第２〜第５の実施例と同様に中継パ
ッドに熱的に接続されることは言うまでもない。このよ
うに構成することにより、劣化したパワースイッチング
素子のみを切り離して運転することができる。<Sixth Embodiment> As shown in FIG. 9, a large number of power switching element chips 14 and 15 are arranged in parallel between main current terminals 16 and 17 arranged in the same insulating container. The poles of the chips 14 and 15 and the main current terminal 17 are electrically connected by a plurality of bonding wires 55, and the poles of the chips 14 and 15 and the main current terminal 16 are bonded to each other by bonding wires 32 and 34 having fusing parts. 36, 51,
It is electrically connected by 54, and this bond wire 3
2, 34, 36, 51, 54 are separated for each power switching element by the partition plate 18c. In this case, bond wires 32, 34, 36, 51, 54
It goes without saying that the intermediate portion of the above is thermally connected to the relay pad similarly to the above-mentioned second to fifth embodiments. With this configuration, only the deteriorated power switching element can be separated and operated.
【００４１】＜変形例＞なお、本発明は、前述した実施
例に限定されず、種々変形して実施できる。前述の実施
例では、容器本体１２と仕切り板付カバー１８からなる
絶縁容器内に、パワースイッチング素子のチップを２個
収納した例を説明したが、これに限らず１または３個で
あってもよい。もちろん、この場合も、各チップ毎に、
溶断部材、例えばヒューズ、溶断部を有するボンデイグ
ワイヤおよび中継パッドのいずれかを設けることは言う
までもない。<Modifications> The present invention is not limited to the above-described embodiments, but can be modified in various ways. In the above-described embodiment, the example in which the two chips of the power switching element are housed in the insulating container composed of the container body 12 and the cover 18 with the partition plate has been described, but the present invention is not limited to this and may be one or three. . Of course, also in this case, for each chip,
It goes without saying that any one of a fusing member such as a fuse, a bonding wire having a fusing portion, and a relay pad is provided.
【００４２】また、前述の実施例では絶縁容器をモール
ド成形によって得る場合について説明したが、これに限
らずいかなる製法であってもよい。さらに、図９に示す
第６実施例は、主電流端子１６とチップ１４，１５の極
との間をボンデイグワイヤ３２，３４，３６，５１，５
４で接続した場合であるが、第１実施例のように溶断部
材として板ヒューズを用いた場合でも同様に実施でき
る。Further, although the case where the insulating container is obtained by molding is described in the above embodiment, the present invention is not limited to this, and any manufacturing method may be used. Furthermore, in the sixth embodiment shown in FIG. 9, the bonding wires 32, 34, 36, 51, 5 are provided between the main current terminal 16 and the poles of the chips 14, 15.
4 is connected, but the same operation can be performed when a plate fuse is used as the fusing member as in the first embodiment.
【００４３】また、図３の実施例のヒューズの収納部分
に充填した消弧剤２８は、小容量のものは必ずしも必要
でなく、チップ１４，１５の収納部分に充填したゲル１
９も必ずしも必要なものではない。Further, the arc-extinguishing agent 28 filled in the housing portion of the fuse of the embodiment of FIG. 3 does not necessarily need to have a small capacity, and the gel 1 filled in the housing portion of the chips 14 and 15 is not necessarily required.
9 is not always necessary.
【００４４】[0044]
【発明の効果】以上述べた本発明によれば、パワースイ
ッチング素子に過電流が流れても、発煙、爆発を防ぐこ
とができ、また不良のパワースイッチング素子の早期発
見ができるパワーモジュール素子を提供することができ
る。According to the present invention described above, there is provided a power module element capable of preventing smoke and explosion even when an overcurrent flows through the power switching element and enabling early detection of a defective power switching element. can do.
【図１】本発明によるパワーモジュール素子の第１実施
例の内部構造を説明するための構成図。FIG. 1 is a configuration diagram for explaining an internal structure of a first embodiment of a power module device according to the present invention.
【図２】図１の板ヒューズの一つを拡大して示す図。FIG. 2 is an enlarged view showing one of the plate fuses shown in FIG.
【図３】図１のパワーモジュール素子の縦断面図。3 is a vertical cross-sectional view of the power module device of FIG.
【図４】図１のパワーモジュール素子の回路図。FIG. 4 is a circuit diagram of the power module element shown in FIG.
【図５】（ａ），（ｂ）は本発明によるパワーモジュー
ル素子の第２実施例の内部構造を説明するための構成図
および断面図。5 (a) and 5 (b) are a structural view and a sectional view for explaining an internal structure of a second embodiment of the power module element according to the present invention.
【図６】（ａ），（ｂ）は本発明によるパワーモジュー
ル素子の第３実施例の内部構造を説明するための構成図
および断面図。6 (a) and 6 (b) are a structural view and a sectional view for explaining the internal structure of a third embodiment of the power module element according to the present invention.
【図７】（ａ），（ｂ）は本発明によるパワーモジュー
ル素子の第４実施例の内部構造を説明するための構成図
および断面図。7 (a) and 7 (b) are a structural view and a sectional view for explaining the internal structure of a fourth embodiment of the power module element according to the present invention.
【図８】本発明によるパワーモジュール素子の第５実施
例の内部構造を説明するための構成図。FIG. 8 is a configuration diagram for explaining an internal structure of a power module device according to a fifth embodiment of the present invention.
【図９】本発明によるパワーモジュール素子の第６実施
例の内部構造を説明するための構成図。FIG. 9 is a configuration diagram for explaining the internal structure of a sixth embodiment of the power module element according to the present invention.
【図１０】従来のパワースイッチング素子の一例である
ＩＧＢＴを示す平面図。FIG. 10 is a plan view showing an IGBT which is an example of a conventional power switching element.
【図１１】図１０の一例であるＩＧＢＴの回路図。11 is a circuit diagram of an IGBT which is an example of FIG.
【図１２】図１０および図１１のＩＧＢＴを使用した電
力変換装置の回路図。FIG. 12 is a circuit diagram of a power conversion device using the IGBT of FIGS. 10 and 11.
１２ａ…金属ベース、１２ｂ…絶縁枠、１３…絶縁材、
１４，１５…パワースイッチング素子のチップ、１６，
１７…主電流端子（パワー端子）、１８…仕切り板付カ
バー、１９…ゲル、２０〜２５…板ヒューズ、２６，２
７…ボンデイグワイヤ、２８…消弧剤、２９〜３１…中
継パッド、３２〜３７…ボンデイグワイヤ、３８〜４１
…中継パッド、４２，４４…フォトカプラ。12a ... Metal base, 12b ... Insulating frame, 13 ... Insulating material,
14, 15 ... Chip of power switching element, 16,
17 ... Main current terminal (power terminal), 18 ... Cover with partition plate, 19 ... Gel, 20-25 ... Plate fuse, 26, 2
7 ... Bonding wire, 28 ... Arc extinguishing agent, 29-31 ... Relay pad, 32-37 ... Bonding wire, 38-41
... Relay pads, 42,44 ... Photo couplers.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 25/18 29/78 9055−4Ｍ Ｈ０１Ｌ 29/78 ６５２ Ｑ (72)発明者 野村 芳士 東京都府中市東芝町１番地 株式会社東芝 府中工場内─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 6 Identification number Internal reference number FI Technical indication location H01L 25/18 29/78 9055-4M H01L 29/78 652 Q (72) Inventor Yoshishi Nomura Tokyo Fuchu City, Toshiba Town, No. 1
Claims (7)
イッチング素子チップと、この各チップの電極に電気的
に接続する入力および出力主電流端子を収納し、かつこ
の入力および出力主電流端子の一部が前記絶縁容器外部
に露出するように構成したパワーモジュール素子におい
て、 前記絶縁容器内であって前記入力および出力主電流端子
のいずれか一方、または前記各チップの電極と前記入力
および出力主電流端子のいずれか一方の接続点間に前記
入力および出力主電流端子に流れる主電流の値に対応し
た溶断特性を決定可能な溶断部材を備えたことを特徴と
するパワーモジュール素子。1. An insulating container contains at least one power switching element chip and an input and output main current terminal electrically connected to an electrode of each chip, and one of the input and output main current terminals. In the power module element configured to be exposed to the outside of the insulating container, one of the input and output main current terminals in the insulating container, or the electrode of each chip and the input and output main current A power module element comprising a fusing member capable of determining a fusing characteristic corresponding to a value of a main current flowing through the input and output main current terminals, between any one of connection points of the terminals.
記チップの収納されている部分を仕切り体で仕切ったこ
とを特徴とする請求項１記載のパワーモジュール素子。2. The power module element according to claim 1, wherein a portion in which the fusing member is accommodated and a portion in which the chip is accommodated are partitioned by a partition body.
記チップの収納されている部分を仕切り体で仕切り、前
記溶断部材の収納されている部分に溶断部材の溶断によ
って生ずるアークを消弧する消弧材を充填したことを特
徴とする請求項１記載のパワーモジュール素子。3. A portion for partitioning the housing of the fusing member and a portion of the chip is partitioned by a partition body to extinguish an arc generated by the melting of the fusing member in the housing portion of the fusing member. The power module element according to claim 1, which is filled with an arc extinguishing material.
板ヒューズの少なくとも一部に、溶断特性を決定するた
めの切り込みを有していることを特徴とする請求項１記
載のパワーモジュール素子。4. The power module element according to claim 1, wherein the fusing member is a plate fuse, and at least a part of the plate fuse has a notch for determining a fusing characteristic.
イッチング素子チップと、この各チップの電極に電気的
に接続する入力および出力主電流端子を収納し、かつこ
の入力および出力主電流端子の一部が外部に露出するよ
うに構成したパワーモジュール素子において、 前記絶縁容器内であって前記チップの電極と前記入力お
よび出力主電流端子を電気的に接続し、少なくとも一部
に溶断部を有する複数のボンディングワイヤと、 前記絶縁容器内であって前記ボンディングワイヤを部分
的に支持し該ボンディングワイヤの放熱を目的とする少
なくとも１個の中継パッドと、 を備え、前記ボンディングワイヤの本数、太さ、長さの
少なくともいずれか一方ならびに前記中継パッドの個
数、前記中継パッドの表面積の少なくとも一方を調整す
ることにより前記ボンディングワイヤの溶断部の溶断特
性を決定するようにしたことを特徴とするパワーモジュ
ール素子。5. An insulating container accommodates at least one power switching element chip and an input and output main current terminal electrically connected to an electrode of each chip, and one of the input and output main current terminals. In a power module element configured to be exposed to the outside, a plurality of parts that electrically connect the electrodes of the chip and the input and output main current terminals in the insulating container and have a fusing part in at least a part thereof Bonding wires, and at least one relay pad for partially supporting the bonding wires in the insulating container for the purpose of radiating the bonding wires, the number of the bonding wires, the thickness, Adjusting at least one of the length, the number of the relay pads, and / or the surface area of the relay pads. The power module element is characterized in that the fusing characteristic of the fusing part of the bonding wire is determined by the following.
るヒューズからなり、このヒューズに並列に該ヒューズ
が溶断したこと前記絶縁容器外部で検出できるように構
成した溶断検出手段を備えたことを特徴とする請求項１
記載のパワーモジュール素子。6. The fusing member comprises a fuse that is determined by the fusing characteristic of the main current, and the fusing member is provided in parallel with the fuse so as to detect that the fuse has blown outside the insulating container. Claim 1
The power module element described.
り体により分離隔離したことを特徴とする請求項１また
は請求項５記載のパワーモジュール素子。7. The power module element according to claim 1, further comprising a plurality of chips, each chip being separated and isolated by a partition body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP514695A JP3292614B2 (en) | 1995-01-17 | 1995-01-17 | Power module element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP514695A JP3292614B2 (en) | 1995-01-17 | 1995-01-17 | Power module element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08195411A true JPH08195411A (en) | 1996-07-30 |
| JP3292614B2 JP3292614B2 (en) | 2002-06-17 |
Family
ID=11603165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP514695A Expired - Lifetime JP3292614B2 (en) | 1995-01-17 | 1995-01-17 | Power module element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3292614B2 (en) |
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| US7148504B2 (en) | 2004-04-26 | 2006-12-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| JP2007123644A (en) * | 2005-10-31 | 2007-05-17 | Mitsubishi Electric Corp | Power semiconductor device |
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| JP2018148164A (en) * | 2017-03-09 | 2018-09-20 | 株式会社東芝 | Power semiconductor module |
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| JP3292614B2 (en) | 2002-06-17 |
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