JPH08186066A - Method and system for treating microparticle and powdery dust in semiconductor element fabrication process - Google Patents
Method and system for treating microparticle and powdery dust in semiconductor element fabrication processInfo
- Publication number
- JPH08186066A JPH08186066A JP6339812A JP33981294A JPH08186066A JP H08186066 A JPH08186066 A JP H08186066A JP 6339812 A JP6339812 A JP 6339812A JP 33981294 A JP33981294 A JP 33981294A JP H08186066 A JPH08186066 A JP H08186066A
- Authority
- JP
- Japan
- Prior art keywords
- fine particle
- dust
- filter
- liquid separation
- particle dust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000428 dust Substances 0.000 title claims abstract description 229
- 239000004065 semiconductor Substances 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 45
- 238000000034 method Methods 0.000 title claims description 42
- 239000011859 microparticle Substances 0.000 title abstract 3
- 239000007788 liquid Substances 0.000 claims abstract description 108
- 239000010419 fine particle Substances 0.000 claims abstract description 88
- 238000000926 separation method Methods 0.000 claims abstract description 87
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 15
- 229920000642 polymer Polymers 0.000 claims description 52
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 42
- 239000002250 absorbent Substances 0.000 claims description 34
- 239000002699 waste material Substances 0.000 claims description 17
- 238000012545 processing Methods 0.000 claims description 15
- 238000001914 filtration Methods 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims description 3
- 238000010187 selection method Methods 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000007774 longterm Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 69
- 239000010410 layer Substances 0.000 description 54
- 239000003921 oil Substances 0.000 description 41
- 239000000835 fiber Substances 0.000 description 16
- 239000002245 particle Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 239000000057 synthetic resin Substances 0.000 description 10
- 229920003002 synthetic resin Polymers 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000005192 partition Methods 0.000 description 5
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 5
- -1 silicon monohydrogen Chemical class 0.000 description 5
- 229920002994 synthetic fiber Polymers 0.000 description 5
- 239000012209 synthetic fiber Substances 0.000 description 5
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 4
- FAPDDOBMIUGHIN-UHFFFAOYSA-K antimony trichloride Chemical compound Cl[Sb](Cl)Cl FAPDDOBMIUGHIN-UHFFFAOYSA-K 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920001155 polypropylene Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004887 air purification Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000012717 electrostatic precipitator Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 210000004209 hair Anatomy 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 239000012779 reinforcing material Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000000638 solvent extraction Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical compound Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 description 2
- JCMGUODNZMETBM-UHFFFAOYSA-N arsenic trifluoride Chemical compound F[As](F)F JCMGUODNZMETBM-UHFFFAOYSA-N 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- VVRKSAMWBNJDTH-UHFFFAOYSA-N difluorophosphane Chemical compound FPF VVRKSAMWBNJDTH-UHFFFAOYSA-N 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052987 metal hydride Inorganic materials 0.000 description 2
- 150000004681 metal hydrides Chemical class 0.000 description 2
- 239000000123 paper Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- 239000002023 wood Substances 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229920002972 Acrylic fiber Polymers 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- PBYMHCSNWNVMIC-UHFFFAOYSA-N C.F.F Chemical compound C.F.F PBYMHCSNWNVMIC-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical class [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 229910015275 MoF 6 Inorganic materials 0.000 description 1
- 241000904500 Oxyspora paniculata Species 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229920006221 acetate fiber Polymers 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910000074 antimony hydride Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 239000010425 asbestos Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003546 flue gas Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000009787 hand lay-up Methods 0.000 description 1
- DBGPLCIFYUHWKA-UHFFFAOYSA-H hexachloromolybdenum Chemical compound Cl[Mo](Cl)(Cl)(Cl)(Cl)Cl DBGPLCIFYUHWKA-UHFFFAOYSA-H 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000012784 inorganic fiber Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- UNRFQJSWBQGLDR-UHFFFAOYSA-N methane trihydrofluoride Chemical compound C.F.F.F UNRFQJSWBQGLDR-UHFFFAOYSA-N 0.000 description 1
- 239000011490 mineral wool Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- RLCOZMCCEKDUPY-UHFFFAOYSA-H molybdenum hexafluoride Chemical compound F[Mo](F)(F)(F)(F)F RLCOZMCCEKDUPY-UHFFFAOYSA-H 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 229960001730 nitrous oxide Drugs 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- JTJMJGYZQZDUJJ-UHFFFAOYSA-N phencyclidine Chemical class C1CCCCN1C1(C=2C=CC=CC=2)CCCCC1 JTJMJGYZQZDUJJ-UHFFFAOYSA-N 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- UHZYTMXLRWXGPK-UHFFFAOYSA-N phosphorus pentachloride Chemical compound ClP(Cl)(Cl)(Cl)Cl UHZYTMXLRWXGPK-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- DHVDSDSRJALNTL-UHFFFAOYSA-N propane hexahydrofluoride Chemical compound CCC.F.F.F.F.F.F DHVDSDSRJALNTL-UHFFFAOYSA-N 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 229910052895 riebeckite Inorganic materials 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- KXCAEQNNTZANTK-UHFFFAOYSA-N stannane Chemical compound [SnH4] KXCAEQNNTZANTK-UHFFFAOYSA-N 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- OUULRIDHGPHMNQ-UHFFFAOYSA-N stibane Chemical compound [SbH3] OUULRIDHGPHMNQ-UHFFFAOYSA-N 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- QHMQWEPBXSHHLH-UHFFFAOYSA-N sulfur tetrafluoride Chemical compound FS(F)(F)F QHMQWEPBXSHHLH-UHFFFAOYSA-N 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 description 1
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910000083 tin tetrahydride Inorganic materials 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 235000013311 vegetables Nutrition 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Landscapes
- Filtering Of Dispersed Particles In Gases (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体素子製造工程の
微粒子粉塵処理方法及びその装置に係り、特に、粒径
０．０１μｍ以上の微粒子粉塵を長期間にわたって捕獲
して廃棄できるようにした半導体素子製造工程の微粒子
粉塵処理方法及び装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for treating fine particle dust in a semiconductor element manufacturing process, and more particularly to a semiconductor capable of capturing fine particle dust having a particle diameter of 0.01 μm or more and discarding it for a long period of time. The present invention relates to a method and apparatus for treating fine particle dust in a device manufacturing process.
【０００２】[0002]
【従来の技術】近年、コンピュータ及びこれを応用する
電子制御装置は目を見張るように発達してきており、そ
の発展の方向及び範囲は無限に広がるように思われる。
このため、コンピュータに使用される電子部品として主
要な地位を占める半導体電子素子の製造技術及びその生
産量も著しく急速に成長している。2. Description of the Related Art In recent years, computers and electronic control devices to which they are applied have been developed in a spectacular manner, and the direction and range of their development seem to be endless.
For this reason, the manufacturing technology and production amount of semiconductor electronic devices, which occupy a major position as electronic components used in computers, are growing remarkably rapidly.
【０００３】これら半導体素子の原料となる半導体とし
ては、ゲルマニウム（Ｇｅ）、シリコン（Ｓｉ）が多用
され、また、特殊な素子にはガリウム砒素（ＧａＡ
ｓ）、ガリウム燐（ＧａＰ）なども実用化されている。Germanium (Ge) and silicon (Si) are frequently used as semiconductors which are the raw materials of these semiconductor elements, and gallium arsenide (GaA) is used for special elements.
s), gallium phosphide (GaP) and the like have been put to practical use.
【０００４】半導体素子製造工程は、例えば半導体の円
柱を形成する半導体柱形成工程、これをスライスして半
導体ウエハを形成するウエハ形成工程、この半導体ウエ
ハにマスキング、薄膜形成、ドーピング、エッチングな
どを繰り返すことにより多数の素子を形成する素子形成
工程、素子が形成された半導体ウエハを各素子に分断す
る裁断工程などからなる。In the semiconductor device manufacturing process, for example, a semiconductor pillar forming process for forming a semiconductor cylinder, a wafer forming process for slicing the semiconductor pillar to form a semiconductor wafer, masking, thin film forming, doping, etching, etc. on the semiconductor wafer are repeated. As a result, it includes an element forming step of forming a large number of elements, a cutting step of cutting the semiconductor wafer on which the elements are formed into each element, and the like.
【０００５】このような半導体製造工程においては、例
えば０．０１〜５０μｍ程度の非常に微細な微粒子粉塵
が発生することが知られており、また、この微粒子粉塵
は、それ自体が公害防止の観点から放散することが禁止
される有害物質であったり、これを含有する気体が有害
物質であったり、雰囲気中の有害物質を吸着したり、収
着したりしていることが知られている。It is known that, in such a semiconductor manufacturing process, extremely fine particle dust of, for example, about 0.01 to 50 μm is generated, and the fine particle dust itself has a viewpoint of preventing pollution. It is known that harmful substances that are prohibited from being emitted from the atmosphere, the gas containing them are harmful substances, and that they adsorb or sorb harmful substances in the atmosphere.
【０００６】半導体製造工程において使用され、或いは
生成される有害物質としては、以下に例示するシリコン
系、砒素系、燐系、硼素系、水素化金属系、フロン系、
ハロゲン、ハロゲン化物、窒素酸化物、その他のものが
ある。As the harmful substances used or generated in the semiconductor manufacturing process, the following silicon-based, arsenic-based, phosphorus-based, boron-based, metal hydride-based, CFC-based,
There are halogens, halides, nitrogen oxides, and others.
【０００７】シリコン系有害ガスとしては、モノシラン
(SiH4)、ジクロルシラン、三塩化一水素ケイ素(SiHC
l3)、四塩化ケイ素(SiCl4)、四フッ化ケイ素(SiF4)、ジ
シラン(Si2H6)、ＴＥＯＳ(Si(OC2H5)などが代表的であ
る。As the silicon-based harmful gas, monosilane is used.
(SiH 4 ), dichlorosilane, silicon monohydrogen trichloride (SiHC
Typical examples are l 3 ), silicon tetrachloride (SiCl 4 ), silicon tetrafluoride (SiF 4 ), disilane (Si 2 H 6 ), and TEOS (Si (OC 2 H 5 )).
【０００８】砒素系有害ガスとしては、アルシン(As
H3)、フッ化砒素(III)(AsF3)、フッ化砒素(V)(AsF5)、
塩化砒素(III)(AsCl3)、塩化砒素(V)(AsCl5)などが代表
的であり、燐系有害ガスとしては、ホスフィン(PH3)、
フッ化燐(III)(PF3)、フッ化燐(V)(PF5)、塩化燐(III)
(PCl3)、塩化燐(V)(PCl5)、オキシ塩化燐(POCl3)などが
代表的である。As the arsenic-based harmful gas, arsine (As
H 3 ), arsenic fluoride (III) (AsF 3 ), arsenic fluoride (V) (AsF 5 ),
Arsenic chloride (III) (AsCl 3 ), arsenic chloride (V) (AsCl 5 ) and the like are typical, and phosphine (PH 3 ) and
Phosphorus fluoride (III) (PF 3 ), phosphorus fluoride (V) (PF 5 ), phosphorus chloride (III)
(PCl 3 ), phosphorus (V) chloride (PCl 5 ), phosphorus oxychloride (POCl 3 ), etc. are typical.
【０００９】硼素系有害ガスとしては、ジボラン(B
2H6)、三フッ化硼素(BF3)、三塩化硼素(BCl3)、三臭化
硼素(BBr3)などが代表的であり、また、水素化金属系有
害ガスとしては、セレン化水素(H2Se)、モノゲルマン(G
eH4)、テルル化水素(H2Te)、スチビン(SbH3)、水素化錫
(SnH4)などが代表的であり、フロン系有害ガスとしては
四フッ化メタン(CF4)、三フッ化一水素メタン(CHF3)、
二フッ化二水素メタン(CH2F2)、六フッ化二水素プロパ
ン(C3H2F6)、八フッ化プロパン(C3F8)などがその例とし
て挙げられる。As a boron-based harmful gas, diborane (B
2 H 6 ), boron trifluoride (BF 3 ), boron trichloride (BCl 3 ), boron tribromide (BBr 3 ), etc. are typical, and selenide is used as a metal hydride-based harmful gas. Hydrogen (H 2 Se), Monogermane (G
eH 4 ), hydrogen telluride (H 2 Te), stibine (SbH 3 ), tin hydride
(SnH 4 ), etc. are typical, and as fluorocarbon harmful gas, tetrafluoromethane (CF 4 ), monohydrogen trifluoride methane (CHF 3 ),
Examples thereof include dihydrogen difluoride methane (CH 2 F 2 ), dihydrogen hexafluoride propane (C 3 H 2 F 6 ), and octafluorofluoride (C 3 F 8 ).
【００１０】有害ガスであるハロゲン及びハロゲン化物
としては、フッ素(F2)、フッ化水素(HF)、塩素(Cl2)、
塩化水素(HCl)、四塩化炭素(CCl4)、臭化水素(HBr2)、
三フッ化窒素(NF3)、四フッ化硫黄(SF4)、六フッ化硫黄
(SF6)、フッ化タングステン(VI)(WF6)、フッ化モリブデ
ン(VI)(MoF6)、四塩化ゲルマニウム(GeCl4)、塩化錫(Sn
Cl4)、塩化アンチモン(VI)(SbCl5)、塩化タングステン
(VI)(WCl6)、六塩化モリブデン(MoCl6)などが代表的で
ある。Halogens and halides which are harmful gases include fluorine (F 2 ), hydrogen fluoride (HF), chlorine (Cl 2 ),
Hydrogen chloride (HCl), carbon tetrachloride (CCl 4 ), hydrogen bromide (HBr 2 ),
Nitrogen trifluoride (NF 3 ), sulfur tetrafluoride (SF 4 ), sulfur hexafluoride
(SF 6 ), tungsten fluoride (VI) (WF 6 ), molybdenum (VI) fluoride (MoF 6 ), germanium tetrachloride (GeCl 4 ), tin chloride (Sn
Cl 4 ), antimony chloride (VI) (SbCl 5 ), tungsten chloride
Typical examples are (VI) (WCl 6 ), molybdenum hexachloride (MoCl 6 ), and the like.
【００１１】有害ガスである窒素酸化物としては、一酸
化窒素(NO)、二酸化窒素(NO2)、一酸化二窒素(N2O)など
が挙げられ、その他の有害ガスとしては、硫化水素(H
2S)、アンモニア(NH3)、トリメチルアミン((CH3)3N)な
どをその例として挙げることができる。Nitrogen oxides which are harmful gases include nitric oxide (NO), nitrogen dioxide (NO 2 ), dinitrogen monoxide (N 2 O) and the like, and other harmful gases include hydrogen sulfide. (H
2 S), ammonia (NH 3 ), trimethylamine ((CH 3 ) 3 N) and the like can be mentioned as examples.
【００１２】この他にも、引火性を有するエタン(C
2H6)、プロパン(C3H8)や、窒素(N2)、酸素(O2)、アルゴ
ン(Ar)、二酸化炭素(CO2)などが含まれた雰囲気中で微
粒子粉塵が生成されることが知られている。In addition to this, ethane (C
2 H 6), and propane (C 3 H 8), fine dust is generated by the nitrogen (N 2), oxygen (O 2), argon (Ar), carbon dioxide (CO 2) atmosphere was etc. It is known that
【００１３】公害防止の精神が徹底しつつある今日で
は、これらの有害成分や粉塵を含んだ排ガスをそのまま
大気中に放出することは許可されず、まず、排ガス中か
ら粉塵を除去し、種々の処理を施して、安全で清浄なガ
スにして放出することが求められている。Nowadays, when the spirit of pollution prevention is being thoroughly enforced, it is not permitted to directly discharge the exhaust gas containing these harmful components and dust into the atmosphere. First, the dust is removed from the exhaust gas to remove various dusts. It is required to be processed and released into a safe and clean gas.
【００１４】そこで、従来、排煙ガスなどの排ガス中か
ら粉塵を除去するために、サイクロン、スクラバー、ベ
ンチュリスクラバー、バグフィルター、電気集塵機、ル
ーパ、沈降室などが利用されていることから、半導体製
造工程から生じる排ガス中から粉塵を除去する場合にも
これらの装置を利用することが提案されている。Therefore, conventionally, in order to remove dust from exhaust gas such as flue gas, cyclones, scrubbers, venturi scrubbers, bag filters, electrostatic precipitators, loopers, settling chambers, etc. have been used. It has been proposed to utilize these devices also when removing dust from the exhaust gas generated from the process.
【００１５】[0015]
【発明が解決しようとする課題】しかし、これらの装置
で捕獲できる塵埃の限界粒径は、サイクロンでは３．０
μｍ、スクラバーでは１．０μｍ、ベンチュリスクラバ
ー、バグフィルター及び電気集塵機では０．１μｍ、ル
ーパでは１０μｍ、沈降室では５０μｍであり、これら
の従来の装置では０．０１〜５０μｍ程度の非常に微細
な微粒子粉塵を捕獲することはできない。However, the limit particle size of dust that can be captured by these devices is 3.0 in a cyclone.
μm, 1.0 μm for scrubber, 0.1 μm for venturi scrubber, bag filter and electrostatic precipitator, 10 μm for looper, 50 μm for settling chamber, and 0.01 μm to 50 μm for these conventional devices. Dust cannot be captured.
【００１６】そこで、目の大きさが０．０１μｍ程度の
フィルタを用いることを考えたが、この考えには次のよ
うな問題があることが分かった。Therefore, it was considered to use a filter having an eye size of about 0.01 μm, but it was found that this idea had the following problems.
【００１７】即ち、現在の技術レベルはせいぜい目の大
きさが１μｍ程度のフィルタを形成できる程度であり、
目の大きさが０．０１μｍ程度のフィルタを形成するこ
とが不可能である。That is, the current technical level is such that a filter having a mesh size of about 1 μm can be formed at most.
It is impossible to form a filter having a mesh size of about 0.01 μm.
【００１８】又、仮に目の大きさが０．０１μｍ程度の
フィルタを形成できたとしても、このように目が小さい
フィルタでは圧力損失が著しく大きくなり、微粒子粉塵
発生源からフィルタに微粒子粉塵を運ぶ気流を形成する
ためには著しく能力が大きく、従って、著しく大型の排
気装置或いは圧送装置を用いる必要がある。その結果、
装置の敷設面積が大きくなるとともに、設備費用が著し
く高くなるので、実用的でない、ということが分かっ
た。Even if it is possible to form a filter having a mesh size of about 0.01 μm, a filter having such a small mesh causes a significant increase in pressure loss and carries fine particle dust from the fine particle dust generation source to the filter. It is extremely powerful in forming the air flow and therefore requires the use of significantly larger exhaust or pumping equipment. as a result,
It has been found that it is not practical because the installation area of the device increases and the equipment cost increases significantly.
【００１９】しかも、この場合、微粒子粉塵がフィルタ
に捕獲されることによって短期間に圧力損失が一層大と
なってその交換が必要となる。Further, in this case, the particulate dust is captured by the filter, so that the pressure loss is further increased in a short period of time, and the replacement thereof is required.
【００２０】そこで、本発明者は研究を重ねた結果、本
発明に先立って、集塵装置のフィルタを目の大きさが上
流側から下流側に順に小さくなる３層以上のフィルタを
積層した積層フィルタで構成し、このフィルタで微粒子
粉塵発生源から導かれた気体を濾過する半導体素子製造
工程の微粒子粉塵処理方法及びその装置を発明し、実用
化に向けて試験を行ったところ、予期した通り０．０１
μｍ以上の粉塵を確実に捕集できることが認められた
(特開平６ー２９６８１５号公報)。Therefore, as a result of repeated research by the present inventor, prior to the present invention, the filter of the dust collector is laminated with three or more layers in which the size of the mesh decreases in order from the upstream side to the downstream side. We invented a method and apparatus for treating fine particles in a semiconductor device manufacturing process that consists of a filter and filters the gas introduced from a fine particle dust generation source with this filter, and tested it for practical use. 0.01
It was confirmed that dust particles of μm and above can be collected reliably.
(JP-A-6-296815).
【００２１】しかし、この試験を繰り返す中で、予想以
上に積層フィルタの目詰まりの進行が速くなり、積層フ
ィルタの交換を予想した以上に頻繁にしなければならな
いことが認められた。However, during the repetition of this test, it was recognized that the progress of clogging of the laminated filter became faster than expected, and the replacement of the laminated filter had to be performed more frequently than expected.
【００２２】そこで、更に研究を重ねた結果、半導体製
造工程で生成する微粒子粉塵を含有する気体には真空ポ
ンプやオイルロータリーなどから漏れた油分、研磨、切
断などに用いる水性或いは油性の工作液などの液体成分
が微小滴状になって浮遊したり、ダクトの周面に付着し
た後、気流に押されたりして積層フィルタまで運ばれ、
微粒子粉塵と混ざって積層フィルタに層状にベッタリと
付着し、目詰まりの進行を加速していることが分かっ
た。Then, as a result of further research, in the gas containing fine particle dust generated in the semiconductor manufacturing process, oil leaked from a vacuum pump, an oil rotary, etc., an aqueous or oily working liquid used for polishing, cutting, etc. The liquid component of is suspended in the form of microdroplets or adheres to the peripheral surface of the duct and is then pushed by the air flow to be carried to the laminated filter,
It was found that it mixed with fine particle dust and adhered to the laminated filter in layers, accelerating the progress of clogging.
【００２３】本発明は、上記技術的事情に鑑みて完成さ
れたものであり、構成が簡単で、しかも、小型でありな
がら、０．０１μｍ程度以上の微粒子粉塵を長期間にわ
たって捕獲できる半導体素子製造工程の微粒子粉塵処理
方法及びその装置を提供することを目的とする。The present invention has been completed in view of the above technical circumstances, and has a simple structure and is small in size, and is capable of capturing a fine particle dust of about 0.01 μm or more for a long period of time while manufacturing a semiconductor device. An object of the present invention is to provide a fine particle dust processing method and a device therefor.
【００２４】ところで、この明細書において、本発明と
は、本発明に係る半導体素子製造工程の微粒子粉塵処理
方法と本発明に係る半導体素子製造工程の微粒子粉塵処
理装置の両方を含む意味で有る。By the way, in this specification, the present invention is meant to include both the fine particle dust processing method in the semiconductor element manufacturing process according to the present invention and the fine particle dust processing apparatus in the semiconductor element manufacturing process according to the present invention.
【００２５】[0025]
【課題を解決するための手段】まず、本発明に係る半導
体素子製造工程の微粒子粉塵処理方法（以下、本発明方
法という。）について説明する。First, a method for treating fine particle dust in a semiconductor element manufacturing process according to the present invention (hereinafter referred to as the method of the present invention) will be described.
【００２６】本発明方法は、半導体素子製造工程におい
て微粒子粉塵を発生する微粒子粉塵発生源から微粒子粉
塵を含有する気体を目の大きさが上流側から下流側に順
に小さくなる３層以上のフィルタを積層した積層フィル
タで濾過して微粒子粉塵を分離して回収する半導体素子
製造工程の微粒子粉塵処理方法において、上記の目的を
達成するため、微粒子粉塵発生源から上記気体を上記積
層フィルタに通す前に回転ブラシに通して水分及び油分
を分離することを特徴とする方法である。The method of the present invention comprises a filter having three or more layers in which the size of the gas containing the fine particle dust from the fine particle dust generation source that generates the fine particle dust in the semiconductor element manufacturing process decreases in order from the upstream side to the downstream side. In the fine particle dust treatment method of the semiconductor element manufacturing process of separating and collecting fine particle dust by filtering with a laminated multilayer filter, in order to achieve the above object, before passing the gas from the fine particle dust source to the multilayer filter. The method is characterized by separating water and oil by passing through a rotating brush.
【００２７】この場合、上記回転ブラシを縦軸心回りに
回転させ、この回転ブラシの下側から上側に上記気体を
通過させるようにしても良いのである。In this case, the rotary brush may be rotated about the center of the vertical axis so that the gas passes from the lower side to the upper side of the rotary brush.
【００２８】この回転ブラシとしては、回転によって水
分及び油分を分離し得る構造であれば特に限定されるも
のではなく、円盤状或いは螺旋状等、種々の構造のもの
が挙げられるのであり、又、この回転ブラシは定位置で
回転しても良く、或いは左右又は上下に移動するように
構成されても良いのである。The rotating brush is not particularly limited as long as it has a structure capable of separating water and oil by rotation, and may have various structures such as a disc shape and a spiral shape. The rotating brush may rotate at a fixed position, or may be configured to move left and right or up and down.
【００２９】本発明方法においては、所望により、上記
液分離室の底部に、吸水性ポリマー、吸油性ポリマー又
は吸水性ポリマーと吸油性ポリマーの積層体を配置し、
分離された水分又は油或いは水分と油をこの吸水性ポリ
マー、吸油性ポリマー又は吸水性ポリマーと吸油性ポリ
マーの積層体に吸収させて廃棄するようにしても良いの
である。In the method of the present invention, if desired, a water-absorbent polymer, an oil-absorbent polymer or a laminate of a water-absorbent polymer and an oil-absorbent polymer is disposed at the bottom of the liquid separation chamber,
The separated water or oil or the water and oil may be absorbed by the water-absorbent polymer, the oil-absorbent polymer or the laminated body of the water-absorbent polymer and the oil-absorbent polymer and discarded.
【００３０】又、本発明方法においては、気体を回転ブ
ラシと積層フィルタとの間で積層フィルタの最も上流側
のフィルタよりも目が大きい別の予備フィルタ(予備集
塵手段)に通し、これによって、予め、比較的大きな粉
塵を捕獲するようにしても良いのである。Further, in the method of the present invention, the gas is passed between the rotary brush and the laminated filter through another preliminary filter (preliminary dust collecting means) having a larger mesh than the most upstream filter of the laminated filter. The relatively large dust may be captured in advance.
【００３１】本発明方法においては、作業者や使用後の
積層フィルタの安全性や取扱性を良好にするために、微
粒子粉塵を捕獲した積層フィルタを廃棄用機器内に密封
して廃棄するようにしても良いのである。In the method of the present invention, in order to improve the safety and handleability of the operator and the laminated filter after use, the laminated filter in which the fine particle dust is captured is sealed and disposed in a disposal device. It is okay.
【００３２】次に、本発明に係る半導体素子製造工程の
微粒子粉塵処理装置（以下、本発明装置という。）につ
いて説明する。Next, the fine particle dust processing apparatus in the semiconductor element manufacturing process according to the present invention (hereinafter referred to as the apparatus of the present invention) will be described.
【００３３】本発明装置は、半導体素子製造工程におい
て微粒子粉塵を発生する微粒子粉塵発生源から導かれる
微粒子粉塵を含む気体を濾過する上流側から下流側に目
の大きさが順に小さくなる３層以上のフィルタを積層し
た積層フィルタを有する集塵装置を設けた半導体素子製
造工程の微粒子粉塵処理装置において、上記本発明方法
を実施するため、微粒子粉塵発生源と積層フィルタとの
間に配置された円筒形の液分離室と、この液分離室内に
液分離室の軸心回りに回転可能に設けられた回転ブラシ
と、この回転ブラシを回転駆動する駆動装置とを備える
液分離装置が設けられていることを特徴とするものであ
る。The apparatus of the present invention comprises three or more layers in which the size of the mesh is reduced from the upstream side to the downstream side for filtering the gas containing the fine particle dust introduced from the fine particle dust generation source for generating the fine particle dust in the semiconductor element manufacturing process. In a fine particle dust treatment apparatus in a semiconductor element manufacturing process provided with a dust collector having a laminated filter of a laminated filter of the above, in order to carry out the method of the present invention, a cylinder arranged between the fine particle dust generation source and the laminated filter. -Shaped liquid separation chamber, a liquid separation device provided with a rotary brush rotatably provided in the liquid separation chamber around the axis of the liquid separation chamber, and a drive device for rotationally driving the rotary brush. It is characterized by that.
【００３４】本発明装置においては、液分離室が縦軸に
配置され、この液分離室が回転ブラシの下方で開口し、
微粒子粉塵発生源に液分離室を連通させる入口と、上記
回転ブラシの上方で開口し、集塵装置に連通する出口と
を備えるように構成しても良いのである。In the device of the present invention, the liquid separation chamber is arranged on the vertical axis, and the liquid separation chamber opens below the rotating brush.
It may be configured to have an inlet that communicates the liquid separation chamber with the particulate dust generation source, and an outlet that opens above the rotary brush and communicates with the dust collector.
【００３５】本発明装置において、この回転ブラシとし
ては、回転によって水分及び油分を分離し得る構造であ
れば特に限定されるものではなく、円盤状或いは螺旋状
等、種々の構造のものが挙げられのであり、又、この回
転ブラシは定位置で回転しても良く、或いは左右又は上
下に移動するように構成されても良いのである。In the device of the present invention, the rotary brush is not particularly limited as long as it has a structure capable of separating water and oil by rotation, and various structures such as a disc shape and a spiral shape can be mentioned. In addition, the rotating brush may rotate at a fixed position, or may be configured to move left and right or up and down.
【００３６】又、本発明装置においては、所望により、
液分離装置が液分離室の底部に収納される吸水性ポリマ
ー、吸油性ポリマー又は吸水性ポリマーと吸油性ポリマ
ーの積層体を備えるても良いのである。In the device of the present invention, if desired,
The liquid separation device may include a water-absorbent polymer, an oil-absorbent polymer or a laminate of the water-absorbent polymer and the oil-absorbent polymer housed in the bottom of the liquid separation chamber.
【００３７】本発明装置においては、液分離室における
回転ブラシよりも下側の部分が分離可能に設けられてい
ることにより、この液分離室が至極簡単に分離、交換が
できるので、保守管理が至極容易になるのである。In the apparatus of the present invention, since the lower part of the liquid separating chamber than the rotating brush is separably provided, the liquid separating chamber can be separated and replaced very easily, so that maintenance management is possible. It will be extremely easy.
【００３８】又、本発明装置においては、液分離装置と
積層フィルタとの間で気体を濾過する積層フィルタの最
も上流側のフィルタよりも目が大きい別の予備フィルタ
(予備集塵手段)が設けられていることにより、予め、比
較的大きな粉塵を捕獲できるので、積層フィルタを一層
長期間にわたって使用できるのである。In the apparatus of the present invention, another preliminary filter having a larger eye than the most upstream filter of the laminated filter for filtering gas between the liquid separation device and the laminated filter.
Since the (preliminary dust collecting means) is provided, relatively large dust can be captured in advance, so that the laminated filter can be used for a longer period of time.
【００３９】本発明装置においては、液分離装置の出口
に複数の集塵装置が接続され、複数の集塵装置の中から
選択された１つ又は複数の集塵装置に選択的に気流を導
く集塵装置選択手段が設けられていることにり、半導体
素子の製造を円滑に行うことができるので至極有益であ
る。In the device of the present invention, a plurality of dust collectors are connected to the outlet of the liquid separation device, and the air flow is selectively guided to one or a plurality of dust collectors selected from the plurality of dust collectors. Since the dust collecting device selecting means is provided, the semiconductor element can be smoothly manufactured, which is extremely beneficial.
【００４０】又、本発明装置においては、液分離装置の
出口に接続される１つ又は複数の集塵装置の集塵室に複
数の積層フィルタが並列的に設けられ、その集塵室の複
数の積層フィルタの中から選択された１つ又は複数の積
層フィルタに選択的に気流を導くフィルタ選択手段が設
けられることにより、半導体素子の製造を円滑に行うこ
とができるので至極有益である。In the apparatus of the present invention, a plurality of laminated filters are provided in parallel in the dust collecting chambers of one or a plurality of dust collecting devices connected to the outlet of the liquid separating device, and a plurality of dust collecting chambers are provided. By providing the filter selection means that selectively guides the air flow to one or a plurality of laminated filters selected from among the laminated filters described above, the semiconductor element can be manufactured smoothly, which is extremely beneficial.
【００４１】本発明装置においては、集塵装置には、微
粒子粉塵を捕獲した積層フィルタを密封する廃棄用容器
が設けられていることにり、微粒子粉塵を捕獲した積層
フィルタの廃棄処理が容易に行えるので有益である。In the apparatus of the present invention, the dust collector is provided with the disposal container for sealing the laminated filter in which the fine particle dust is captured, so that the disposal process of the laminated filter in which the fine particle dust is captured is facilitated. It is useful because it can be done.
【００４２】特に、本発明装置において、集塵装置の匣
体と別体に形成され、且つ匣体に挿抜される廃棄用容器
が設けられていることにり、微粒子粉塵を捕獲した積層
フィルタの廃棄処理が一層容易に行えるので、至極有益
である。In particular, the apparatus of the present invention is provided with a disposal container which is formed separately from the case body of the dust collector and is inserted into and removed from the case body. It is extremely useful because it can be disposed of more easily.
【００４３】この場合、集塵装置の匣体が廃棄用容器に
兼用されているものが、構造が簡単で、しかも取り扱い
易いので望ましい。In this case, it is desirable that the box of the dust collector is also used as the container for disposal because it has a simple structure and is easy to handle.
【００４４】[0044]
【作用】本発明によれば、微粒子粉塵発生源から微粒子
粉塵を含有する気体が液分離装置に導入されて回転ブラ
シに接触すると、この気流に含まれている油分及び水分
が、回転ブラシの毛に付着し、回転ブラシの回転により
与えられる遠心力で気流から分離され、捕獲される。According to the present invention, when a gas containing fine particle dust is introduced into the liquid separator from the fine particle dust source and comes into contact with the rotating brush, the oil and water contained in this air flow cause the bristles of the rotating brush to move. And is separated from the air flow and captured by the centrifugal force given by the rotation of the rotating brush.
【００４５】したがって、この回転ブラシの下流側に設
けられた積層フィルタに油分及び水分が流れなくなり、
油分及び水分を含んだ粉塵が積層フィルタにベッタリと
付着して当該積層フィルタの目詰まりの進行が加速され
ることを防止でき、積層フィルタの交換周期を著しく長
くすることができる作用を有する。Therefore, oil and water do not flow to the laminated filter provided on the downstream side of the rotating brush,
It is possible to prevent dust containing oil and water from sticking to the laminated filter and accelerating the progress of clogging of the laminated filter, and it is possible to significantly lengthen the replacement cycle of the laminated filter.
【００４６】又、このように回転ブラシによって油分及
び水分を除去する場合には、水分及び油分の分離に際し
ての圧力損失が小さく、微粒子粉塵発生源から回転ブラ
シ及び積層フィルタを通って大気中に排出される気流を
形成する送風機の能力の増加を最小限度に抑えることが
でき、装置全体の小型化及びコンパクト化を図る上で有
利になる。When oil and water are removed by the rotary brush as described above, the pressure loss at the time of separating the water and oil is small, and the particulate dust is discharged into the atmosphere through the rotary brush and the laminated filter. The increase in the capacity of the blower that forms the generated airflow can be suppressed to a minimum, which is advantageous in achieving downsizing and compactification of the entire apparatus.
【００４７】[0047]
【実施例】以下、本発明の一実施例に係る半導体素子製
造工程の微粒子粉塵処理方法及びその装置を図面に基づ
いて具体的に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method and apparatus for treating fine particle dust in a semiconductor device manufacturing process according to an embodiment of the present invention will be specifically described below with reference to the drawings.
【００４８】本発明方法の一実施例に係る半導体素子製
造工程の微粒子粉塵処理方法は、図１の構成図に示すよ
うに、半導体素子製造工程において微粒子粉塵を発生す
る微粒子粉塵発生源１から導出ダクト２により導かれる
微粒子粉塵を含有する気体から油分及び水分を分離する
液分離装置３と、この液分離装置３において油分及び水
分を分離された気体を中間ダクト４を介して吸入し、微
粒子粉塵を除去する集塵装置５と、この集塵装置５に接
続された排気ダクト６と、排気ダクト６に介在させた有
害ガス処理装置１３と、この有害ガス処理装置１３の上
流側で排気ダクト６に介在させた送風機７とを備えてい
る。As shown in the block diagram of FIG. 1, a method for treating fine particle dust in a semiconductor element manufacturing process according to an embodiment of the method of the present invention is derived from a fine particle dust generation source 1 which generates fine particle dust in the semiconductor element manufacturing process. A liquid separator 3 for separating oil and water from a gas containing fine particle dust guided by a duct 2, and a gas separated from oil and water in the liquid separator 3 is sucked in through an intermediate duct 4 to generate fine particle dust. A dust collector 5 for removing air, an exhaust duct 6 connected to the dust collector 5, a harmful gas treatment device 13 interposed in the exhaust duct 6, and an exhaust duct 6 upstream of the harmful gas treatment device 13. And a blower 7 interposed therebetween.
【００４９】この送風機７は、気体を微粒子粉塵発生源
から導出ダクト２、液分離装置３、中間ダクト４、集塵
装置５及び排気ダクト６を経て、大気中に放出させるよ
うに構成してあれば、導出ダクト２或いは中間ダクト４
に介在させたり、液分離装置３内或いは集塵装置５内に
設けたりしてもよい。This blower 7 is constructed so as to discharge the gas from the particulate dust generation source to the atmosphere through the discharge duct 2, the liquid separating device 3, the intermediate duct 4, the dust collecting device 5 and the exhaust duct 6. For example, the outlet duct 2 or the intermediate duct 4
It may be provided in the liquid separator 3 or the dust collector 5.
【００５０】上記液分離装置３は、円筒形の匣体３１を
備え、この匣体３１の内部に円筒状に形成された液分離
室３２が形成され、この匣体３１の一端部に液分離室３
２を導出ダクト２に連通させる入口３３が形成されると
共に、他端部に液分離室３２を中間ダクト４を連通させ
る出口３５が形成されている。The liquid separating apparatus 3 is provided with a cylindrical casing 31, a cylindrical liquid separating chamber 32 is formed in the casing 31, and the liquid separating chamber 32 is formed at one end of the casing 31. Room 3
An inlet 33 for communicating 2 with the outlet duct 2 is formed, and an outlet 35 for communicating the liquid separation chamber 32 with the intermediate duct 4 is formed at the other end.
【００５１】又、液分離室３２内には入口と出口の間で
液分離室３２を横断するように、円盤状の回転ブラシ３
６が回転可能に設けられ、更に、この回転ブラシ３６を
駆動する駆動装置３７が液分離室３２外に設けられる。Further, in the liquid separation chamber 32, a disk-shaped rotary brush 3 is arranged so as to traverse the liquid separation chamber 32 between the inlet and the outlet.
6 is rotatably provided, and a drive device 37 for driving the rotating brush 36 is provided outside the liquid separation chamber 32.
【００５２】液分離室３２及び回転ブラシ３６の軸心
は、水平方向に向けてもよいが、回転ブラシ３６によっ
て気体から分離された油分、水分及び微粒子粉塵の一部
分が回転ブラシ３６の下流側に移動することを防止し、
確実に回収するためには、液分離室３２及び回転ブラシ
３６の軸心を直立させ、入口３３を回転ブラシ３６より
も下方に配置し、出口３５を回転ブラシ３６よりも上方
に配置することが至当である。The axes of the liquid separation chamber 32 and the rotary brush 36 may be oriented in the horizontal direction, but some of the oil, water and fine particle dust separated from the gas by the rotary brush 36 are located downstream of the rotary brush 36. Prevent movement,
In order to ensure recovery, the axes of the liquid separation chamber 32 and the rotating brush 36 should be upright, the inlet 33 should be arranged below the rotating brush 36, and the outlet 35 should be arranged above the rotating brush 36. It is reasonable.
【００５３】従って、この実施例では、液分離室３２を
縦軸に配置し、回転ブラシ３６を縦軸心回りに回転可能
に設け、液分離室３２の回転ブラシ３６よりも下方の周
面に入口３３を開口し、液分離室３２の上壁３４の中心
から偏心した位置に出口３５を開口させている。Therefore, in this embodiment, the liquid separation chamber 32 is arranged on the vertical axis, and the rotary brush 36 is rotatably provided around the vertical axis, and the liquid separation chamber 32 is provided on the peripheral surface below the rotary brush 36. The inlet 33 is opened, and the outlet 35 is opened at a position eccentric from the center of the upper wall 34 of the liquid separation chamber 32.
【００５４】ところで、上記回転ブラシ３６としては、
上述のように円盤状に形成しても良いが、これに代え
て、螺旋状等、種々の構造のものに形成しても良く、
又、この回転ブラシ３６は定位置で回転しても良く、或
いは左右又は上下に移動するように構成されても良いの
であり、要は、回転によって水分及び油分を分離し得る
構造であれば特に限定されるものではない。By the way, as the rotary brush 36,
Although it may be formed in a disc shape as described above, in place of this, it may be formed in various structures such as a spiral shape,
Further, the rotating brush 36 may rotate at a fixed position or may be configured to move to the left or right or up and down. The point is, in particular, if the structure is capable of separating water and oil by rotation. It is not limited.
【００５５】又、上記駆動装置３７は、液分離室３２の
下方に設けることも可能であるが、このように液分離室
３２を縦軸に配置し、回転ブラシ３６を縦軸心回りに回
転可能に配置し、その下方に入口３３を上方に出口３５
を配置する場合には、回転ブラシ３６によって気体から
分離された油分、水分及び微粒子粉塵の一部分の回収を
容易にするため、液分離室３２の上部のみに回転ブラシ
３６の中心軸３８を配置することが有利であるので、液
分離室３２の上方に駆動装置３７が配置されている。The drive unit 37 may be provided below the liquid separation chamber 32, but the liquid separation chamber 32 is arranged on the vertical axis and the rotary brush 36 is rotated about the vertical axis as described above. Arranging so that the inlet 33 is below and the outlet 35 is above.
When arranging, the central axis 38 of the rotating brush 36 is arranged only in the upper part of the liquid separation chamber 32 in order to facilitate the recovery of oil, water and a part of fine particle dust separated from the gas by the rotating brush 36. Advantageously, a drive 37 is arranged above the liquid separation chamber 32.
【００５６】ここでは、駆動装置３７を上壁３４の上側
に配置しているが、駆動装置３７を上壁３４の下側、即
ち、液分離室３２内に設けてもよい。Although the driving device 37 is arranged above the upper wall 34 here, the driving device 37 may be provided below the upper wall 34, that is, in the liquid separation chamber 32.
【００５７】上記匣体３１を形成する素材は特に限定さ
れず、例えば、紙、木、合成樹脂、金属などを用いるこ
とができるが、気体の圧力に耐える程度の機械的強度、
特に剛性を有することが必要である。The material forming the box 31 is not particularly limited, and for example, paper, wood, synthetic resin, metal, etc. can be used, but the mechanical strength to withstand the pressure of gas,
In particular, it is necessary to have rigidity.
【００５８】この実施例では、機械的強度に優れ、ま
た、耐候性、耐薬品性及び耐酸性、耐アルカリ性及び耐
熱性に優れた合成樹脂で匣体３１を形成している。In this embodiment, the casing 31 is made of synthetic resin having excellent mechanical strength, weather resistance, chemical resistance, acid resistance, alkali resistance and heat resistance.
【００５９】また、上記匣体３１の形状は、内部に液分
離室３２を形成できる中空形状であれば特に限定され
ず、立方形、直方形などの多角立方体、円筒形、楕円筒
形などに形成すればよいが、製造コストの低減を図るた
めできるだけ単純な形状に形成することが好ましい。The shape of the box 31 is not particularly limited as long as it is a hollow shape capable of forming the liquid separation chamber 32 therein, and may be a polygonal cube such as a cubic or a rectangular parallelepiped, a cylinder, an elliptic cylinder or the like. Although it may be formed, it is preferable to form the shape as simple as possible in order to reduce the manufacturing cost.
【００６０】この実施例では、匣体３１を平板材に曲げ
たり、回転モールド成形、ハンドレイアップ法などによ
って簡単に成形できる円筒形に形成している。In this embodiment, the box 31 is bent into a flat plate material, or formed into a cylindrical shape which can be easily formed by rotary molding, hand lay-up method or the like.
【００６１】更に、上記匣体３１の大きさは予め求めら
れる単位時間の処理量、後述する吸油性ポリマー８、吸
水性ポリマー９などの交換周期などの処理能力に対応し
て設計すればよい。Further, the size of the box 31 may be designed in accordance with the processing amount per unit time which is obtained in advance, the processing capacity such as the replacement cycle of the oil-absorbent polymer 8 and the water-absorbent polymer 9 which will be described later.
【００６２】上記液分離室３２は、匣体３１の内部に形
成してあれば良く、匣体３１の内部に液分離室３２を区
画する隔壁を設けてもよいが、この実施例では、構成を
簡単にするとともに、小型化、コンパクト化及び軽量化
を図るため、匣体３１そのものが液分離室３２の周囲壁
を構成するようにしている。The liquid separation chamber 32 may be formed inside the box 31 and a partition for partitioning the liquid separation chamber 32 may be provided inside the box 31. In order to simplify the process and reduce the size, size and weight of the liquid, the box 31 itself constitutes the peripheral wall of the liquid separation chamber 32.
【００６３】上記回転ブラシ３６の毛の素材は、特に限
定されず、例えば天然又は合成の繊維、鋼、真鍮、銅な
どの金属線など、一般にブラシの毛に使用されているも
のの中から自由に選択することができる。The material of the bristles of the rotary brush 36 is not particularly limited, and can be freely selected from those commonly used for bristles of brushes, such as natural or synthetic fibers, metal wires of steel, brass, copper and the like. You can choose.
【００６４】この実施例では、回転ブラシ３６の毛先や
液分離室３２の周囲壁の摩耗を長期間にわたって防止す
るために、合成樹脂製の毛を用いた回転ブラシ３６が使
われている。In this embodiment, in order to prevent wear of the bristle tips of the rotary brush 36 and the peripheral wall of the liquid separation chamber 32 for a long period of time, the rotary brush 36 using synthetic resin bristles is used.
【００６５】この回転ブラシ３６に気体が接触すると、
気体に含まれた油分及び水分は回転ブラシ３６の毛の間
に捕捉され、気体から分離される。回転ブラシ３６に捕
捉された油分及び水分は回転ブラシ３６の回転に伴う遠
心力で液分離室３２の周壁３９に運ばれ、液分離室３２
の周壁３９に沿って自重で液分離室３２の底部に流下
し、油分と水分とが上下に分離して溜まる。When gas contacts the rotating brush 36,
Oil and water contained in the gas are trapped between the bristles of the rotating brush 36 and separated from the gas. The oil and water captured by the rotary brush 36 are carried to the peripheral wall 39 of the liquid separation chamber 32 by the centrifugal force accompanying the rotation of the rotary brush 36, and the liquid separation chamber 32
Along the peripheral wall 39 of the above, it flows down to the bottom of the liquid separation chamber 32 by its own weight, and oil and water are vertically separated and collected.
【００６６】又、気体に含まれた粉塵の一部分も回転ブ
ラシ３６の毛の間に捕捉されたり、回転ブラシ３６に付
着した油分或いは水分に吸着されたりして、油分或いは
水分と共に液分離室３２の周壁３９に運ばれ、更に、液
分離室３２の底部に流れ落ちる。Part of the dust contained in the gas is also trapped between the bristles of the rotary brush 36 or adsorbed by the oil or moisture adhering to the rotary brush 36, and the liquid separation chamber 32 together with the oil or moisture. Is carried to the peripheral wall 39 of the liquid separation chamber 32 and further flows down to the bottom of the liquid separation chamber 32.
【００６７】残りの微粒子粉塵は回転ブラシ３６の毛の
間を通る気体に乗って出口３５から中間ダクト４を経て
集塵装置５に吸引される。The remaining fine particle dust rides on the gas passing between the bristles of the rotating brush 36 and is sucked from the outlet 35 to the dust collector 5 through the intermediate duct 4.
【００６８】このようにして回転ブラシ３６により油分
及び水分を分離する場合には、液分離に伴う圧力損失が
小さいので、微粒子粉塵発生源１から回転ブラシ３６及
び積層フィルタ５３を通って大気中に排出される気体を
形成する送風機の能力の増加を最小限度に抑えることが
でき、装置全体の小型化及びコンパクト化を図る上で有
利になる。When oil and water are separated by the rotary brush 36 in this way, the pressure loss associated with liquid separation is small, so that the fine particle dust source 1 passes through the rotary brush 36 and the laminated filter 53 to reach the atmosphere. An increase in the capacity of the blower that forms the discharged gas can be suppressed to a minimum, which is advantageous in achieving downsizing and compactification of the entire device.
【００６９】この実施例においては、油分の廃棄処理を
容易にするために、液分離室３２の底部に、必要に応じ
て、吸油性ポリマー８が配置され、液分離室３２の底部
に流下した油分を吸油性ポリマー８に吸着させ、この吸
油性ポリマー８と共に油分を液分離室３２から取り出し
て廃棄できるようにしている。In this embodiment, in order to facilitate the disposal of oil, the oil-absorbing polymer 8 is placed at the bottom of the liquid separation chamber 32, if necessary, and flows down to the bottom of the liquid separation chamber 32. The oil content is adsorbed on the oil-absorbing polymer 8, and the oil content is taken out from the liquid separation chamber 32 together with the oil-absorbing polymer 8 and can be discarded.
【００７０】ここで使用される吸油性ポリマー８とは油
を吸収し、保持するものであれば特に限定されるもので
はなく、この場合、公知のものが使用可能である。The oil-absorbent polymer 8 used here is not particularly limited as long as it absorbs and retains oil, and in this case, known ones can be used.
【００７１】又、この実施例においては、水分の廃棄処
理を容易にするために、液分離室３２の底部に、必要に
応じて、吸水性ポリマー９が配置され、液分離室３２の
底部に流下した水分を吸水性ポリマー９に吸着させ、こ
の吸油性ポリマー８と共に水分はこの吸水性ポリマー９
と共に水分を液分離室３２から取り出して廃棄できるよ
うにしている。In addition, in this embodiment, in order to facilitate the disposal of water, the water-absorbent polymer 9 is disposed at the bottom of the liquid separation chamber 32, if necessary, and is disposed at the bottom of the liquid separation chamber 32. The water that has flowed down is adsorbed on the water-absorbing polymer 9, and the water is absorbed together with the oil-absorbing polymer 8.
At the same time, water is taken out of the liquid separation chamber 32 and can be discarded.
【００７２】ここで使用される吸水性ポリマー９とは水
を吸収し、保持するものであれば特に限定されるもので
はなく、この場合、公知のものが使用可能である。The water-absorbing polymer 9 used here is not particularly limited as long as it absorbs and retains water, and in this case, known ones can be used.
【００７３】液分離室３２の底部に吸油性ポリマー８或
いは吸水性ポリマー９を配置する形態は特に限定される
ものではなく、具体的には、例えば粒状或いは粉末状の
ものを液分離室３２の底部に適当な厚さに敷き詰めた
り、吸油性ポリマー８或いは吸水性ポリマー９を担持し
た多孔質体を液分離室３２の底部に配置したり、吸油性
ポリマー８或いは吸水性ポリマー９を配合した合成樹脂
フィルムないしシートを液分離室３２の底部に配置した
りすればよい。The form in which the oil-absorbent polymer 8 or the water-absorbent polymer 9 is arranged at the bottom of the liquid separation chamber 32 is not particularly limited. Specifically, for example, a granular or powdery one is provided in the liquid separation chamber 32. The bottom part of the liquid separation chamber 32 is provided with a porous body supporting the oil-absorbent polymer 8 or the water-absorbent polymer 9, or the oil-absorbent polymer 8 or the water-absorbent polymer 9 is mixed. A resin film or sheet may be arranged at the bottom of the liquid separation chamber 32.
【００７４】これらの形態の中では、廃棄処理時の作業
性を高めるために、吸油性ポリマー８或いは吸水性ポリ
マー９を担持した多孔質体、又は、吸油性ポリマー８或
いは吸水性ポリマー９を配合した合成樹脂フィルムない
しシートを液分離室３２の底部に配置する方法が推奨さ
れる。Among these forms, in order to improve workability at the time of disposal, a porous material carrying the oil-absorbing polymer 8 or the water-absorbing polymer 9, or the oil-absorbing polymer 8 or the water-absorbing polymer 9 is blended. It is recommended that the above synthetic resin film or sheet is arranged at the bottom of the liquid separation chamber 32.
【００７５】上記匣体３１には、液分離室３２内の廃棄
物を取り出すために、液分離室３２の底部を外部に連通
させる開口部とこの開口部を密封する蓋体とを設けても
よいが、この実施例では、回収作業者が廃棄物に接触す
る機会を少なくして、作業の安全性を高めるために、匣
体３１の入口３３よりも下側の下部３１ａを、パッキン
３１ｄを介して、その上部３１ｂから分解できるように
し、廃棄物を入れた匣体３１の下部３１ａに蓋３１ｃを
して、匣体３１の下部３１ａごと運搬できるように構成
している。The box 31 may be provided with an opening for communicating the bottom of the liquid separation chamber 32 to the outside and a lid for sealing the opening in order to take out the waste in the liquid separation chamber 32. However, in this embodiment, in order to reduce the chances that the recovery worker comes into contact with the waste and enhance the safety of the work, the lower part 31a below the inlet 33 of the box 31 and the packing 31d are installed. The lower part 31a of the box 31 in which waste is put is covered with a lid 31c so that it can be carried together with the lower part 31a of the box 31.
【００７６】もっとも、廃棄物の回収にあたって液分離
装置３全体を交換することは妨げない。However, replacement of the entire liquid separation device 3 is not hindered in recovering the waste.
【００７７】又、上記液分離室３２の底面をじょうご状
に形成し、その下端に連設した取出口から、随時、廃棄
物を取り出せるようにしてもよい。Further, the bottom surface of the liquid separation chamber 32 may be formed in a funnel shape so that the waste can be taken out at any time from the take-out port connected to the lower end thereof.
【００７８】上記集塵装置５には、筒状の匣体５１とこ
れの内部に形成された集塵室５２に配置される積層フィ
ルタ５３とが設けられ、この匣体５１の一端には液分離
室３２の出口３５に集塵室５２を連通させる導入口５４
が、他端には集塵室５２を排気ダクト６を介して、送風
機７、有害ガス処理装置１３を経て大気中に連通させる
導出口５５が形成される。The dust collecting device 5 is provided with a cylindrical case 51 and a laminated filter 53 arranged in a dust collecting chamber 52 formed inside the case 51, and one end of the case 51 is covered with a liquid. Inlet 54 for communicating the dust collecting chamber 52 with the outlet 35 of the separation chamber 32
However, at the other end, a discharge port 55 is formed that connects the dust collection chamber 52 to the atmosphere via the exhaust duct 6 and the blower 7 and the harmful gas treatment device 13.
【００７９】上記匣体５１を形成する素材は特に限定さ
れるものではなく、具体的には、例えば、紙、木、合成
樹脂、金属などを用いることができるが、気体の圧力に
耐える程度の機械的強度、特に剛性を有することが必要
である。The material forming the box 51 is not particularly limited, and specifically, for example, paper, wood, synthetic resin, metal, etc. can be used, but it is sufficient to withstand the pressure of gas. It is necessary to have mechanical strength, especially rigidity.
【００８０】この実施例では、機械的強度に優れ、ま
た、耐候性、耐薬品性及び耐酸性、耐アルカリ性及び耐
熱性に優れた合成樹脂で匣体５１を形成している。In this embodiment, the casing 51 is made of synthetic resin having excellent mechanical strength, weather resistance, chemical resistance, acid resistance, alkali resistance and heat resistance.
【００８１】また、上記匣体５１の形状は、内部に集塵
室５２を形成できる中空形状であれば特に限定されず、
立方形、直方形などの多角立方体、円筒形、楕円筒形な
どに形成すればよいが、製造コストの低減を図るためで
きるだけ単純な形状に形成することが好ましい。The shape of the box 51 is not particularly limited as long as it is a hollow shape in which the dust collecting chamber 52 can be formed.
It may be formed into a polygonal cube such as a cube or a rectangular parallelepiped, a cylinder, an elliptic cylinder, or the like, but it is preferable to form the shape as simple as possible in order to reduce the manufacturing cost.
【００８２】この実施例では、図１に示すように、匣体
５１を平板材を折り曲げたり、繋ぎ合わせたりして簡単
に成形できる直方形に形成しているが、例えば図３又は
図９に示すように縦軸の筒状に形成する場合には敷設面
積を狭くでき、特に図９に示すように、液分離装置３の
上側に直結する場合には一層敷設面積を狭くできる。In this embodiment, as shown in FIG. 1, the box 51 is formed into a rectangular parallelepiped which can be easily formed by bending and joining flat plate materials. As shown in the figure, the laying area can be narrowed when it is formed in the cylindrical shape of the vertical axis, and particularly when it is directly connected to the upper side of the liquid separation device 3 as shown in FIG.
【００８３】なお、上記匣体５１の大きさは予め求めら
れる単位時間の処理量、積層フィルタ５３の交換周期な
どの処理能力に対応して設計すればよい。It should be noted that the size of the box 51 may be designed in accordance with the processing capacity such as the processing amount per unit time and the replacement cycle of the laminated filter 53 which are obtained in advance.
【００８４】上記集塵室５２は、匣体５１の内部に形成
してあれば良く、匣体５１の内部に集塵室５２を区画す
る隔壁を設けてもよいが、この実施例では、構造を簡単
にするとともに、小型化、コンパクト化及び軽量化を図
るため、匣体５１そのものが集塵室５２の周囲壁を構成
するようにしている。It is sufficient that the dust collecting chamber 52 is formed inside the casing 51, and a partition wall for partitioning the dust collecting chamber 52 may be provided inside the casing 51. In order to simplify the process and reduce the size, size, and weight, the box 51 itself constitutes the peripheral wall of the dust collection chamber 52.
【００８５】上記積層フィルタ５３は、集塵室５２に導
入された気体を漏れなく貫流させるために、集塵室５２
内を導入室５６と浄気室５７との２室に気密状に区画し
て設けられている。The laminated filter 53 has the dust collecting chamber 52 so that the gas introduced into the dust collecting chamber 52 can flow through without leakage.
The inside is divided into two chambers, an introduction chamber 56 and an air purification chamber 57, in an airtight manner.
【００８６】ここで、積層フィルタ５３は集塵室５２内
に設けられる隔壁とともに集塵室５２内を上記２室に区
画するようにしてもよいが、この実施例では、構成を簡
単にするため、積層フィルタ５３のみによって集塵室５
２内が２室５６、５７に区画される。Here, the laminated filter 53 may divide the inside of the dust collecting chamber 52 into the above-mentioned two chambers together with the partition wall provided in the dust collecting chamber 52, but in this embodiment, the structure is simplified. , The dust collecting chamber 5 only by the laminated filter 53
The interior of 2 is divided into two chambers 56 and 57.
【００８７】上記積層フィルタ５３のフィルタ５３Ａ・
５３Ｂ・５３Ｃの積層数は３層以上とするのが好まし
く、１層又は２層のフィルタでは粒径０．０１μｍの微
粒子粉塵を捕獲できない場合が有るので好ましくない。The filter 53A of the laminated filter 53
It is preferable that the number of laminated layers of 53B and 53C is three or more, which is not preferable because a single-layer or two-layer filter may not be able to capture fine particle dust having a particle diameter of 0.01 μm.
【００８８】また、積層フィルタ５３の上流側に目の小
さいフィルタ５３Ｂ又はフィルタ５３Ｃを配置すること
は、そのフィルタ５３Ｂ又はフィルタ５３Ｃの目の大き
さで比較的小さな微粒子粉塵を捕獲できるが、目詰まり
が早く、使用可能な期間が短くなるので好ましくない。Further, by arranging the filter 53B or the filter 53C having small meshes on the upstream side of the laminated filter 53, it is possible to capture the relatively small particle dust with the size of the mesh of the filter 53B or the filter 53C, but the clogging occurs. However, it is not preferable because it is fast and the usable period becomes short.
【００８９】積層フィルタ５３の各フィルタ５３Ａ・５
３Ｂ・５３Ｃの目の大きさは、捕獲される微粒子粉塵の
粒径分布などを考慮して適宜設定される。Each filter 53A.5 of the laminated filter 53
The size of the eyes of 3B and 53C is appropriately set in consideration of the particle size distribution of the captured fine particle dust.
【００９０】この実施例では、目の大きさが２００μｍ
程度の第１層フィルタ５３Ａと、目の大きさが５０〜２
００μｍの第２層フィルタ５３Ｂと、目の大きさが１〜
５０μｍ程度の第３層フィルタ５３Ｃとが積層されてい
る。In this embodiment, the size of the eyes is 200 μm.
First layer filter 53A having a size of about 50 to 2
The second layer filter 53B of 00 μm and the size of the eyes are 1 to
A third layer filter 53C having a thickness of about 50 μm is laminated.
【００９１】積層フィルタ５３の厚さは、微粒子粉塵発
生源１と大気圧との圧力差、積層フィルタ５３の通気性
ないし圧力損失、積層フィルタ５３の機械的強度等を考
慮して決定すればよく、５ｍｍ以上とすることが好まし
い。The thickness of the laminated filter 53 may be determined in consideration of the pressure difference between the particulate dust generating source 1 and the atmospheric pressure, the air permeability or pressure loss of the laminated filter 53, the mechanical strength of the laminated filter 53, and the like. It is preferably 5 mm or more.
【００９２】又、積層フィルタ５３の各フィルタ５３Ａ
・５３Ｂ・５３Ｃの厚さも、同様に微粒子粉塵発生源１
と大気圧との圧力差、各フィルタ５３Ａ・５３Ｂ・５３
Ｃの通気性ないし圧力損失、各フィルタ５３Ａ・５３Ｂ
・５３Ｃの機械的強度とを考慮して決定すればよいが、
第１層フィルタ５３Ａの厚さが積層フィルタ５３の全厚
さの２０〜５０％、第２層フィルタ５３Ｂの厚さが積層
フィルタ５３の全厚さの３０〜６０％、第３層フィルタ
５３Ｃの厚さが積層フィルタ５３の全厚さの１〜２５％
とすることが適当である。In addition, each filter 53A of the laminated filter 53
・ The thickness of 53B and 53C is also the same as the particle dust source 1
Difference between pressure and atmospheric pressure, filters 53A, 53B, 53
Permeability or pressure loss of C, each filter 53A / 53B
・ It may be determined in consideration of the mechanical strength of 53C,
The first layer filter 53A has a thickness of 20 to 50% of the total thickness of the multilayer filter 53, the second layer filter 53B has a thickness of 30 to 60% of the total thickness of the multilayer filter 53, and the third layer filter 53C has a thickness of 30 to 60%. The thickness is 1 to 25% of the total thickness of the laminated filter 53.
Is appropriate.
【００９３】この実施例では、第１層フィルタ５３Ａは
厚さ約４ｍｍであってポリプロピレン繊維を重ねて形成
されており、第２層フィルタ５３Ｂは厚さ約３ｍｍであ
ってポリプロピレン繊維を重ねて形成されており、第３
層フィルタ５３Ｃは厚さ約１ｍｍであってポリプロピレ
ン繊維を重ねて形成されており、この積層フィルタ５３
全体の厚さは約８ｍｍに形成されている。In this embodiment, the first layer filter 53A has a thickness of about 4 mm and is formed by stacking polypropylene fibers, and the second layer filter 53B is about 3 mm in thickness and is formed by stacking polypropylene fibers. Has been done and the third
The layer filter 53C has a thickness of about 1 mm and is formed by stacking polypropylene fibers.
The total thickness is formed to about 8 mm.
【００９４】上記積層フィルタ５３の形状は特に限定さ
れるものではなく、板形、筒形、錐形、錐台形、球形な
ど自由に形成することができ、板形としては平板形、曲
板形、波板形などに形成できる。また、筒形、錐形、錐
台形の場合にはその一端又は両端を開放することがで
き、その断面形状は円形、楕円形、弦月形、三角以上の
多角形、芒星形など自由に形成することができる。The shape of the laminated filter 53 is not particularly limited, and it can be freely formed into a plate shape, a cylinder shape, a cone shape, a frustum shape, a spherical shape, and the plate shape is a flat plate shape or a curved plate shape. It can be formed into a corrugated plate shape. In the case of a cylinder, cone, or frustum, one or both ends can be opened, and its cross-sectional shape can be freely circular, elliptical, lunar, polygonal above triangular, or star-shaped. Can be formed.
【００９５】この実施例においては、説明を簡単にする
と共に、形状を簡単にして製造コストを削減するため、
積層フィルタ５３を板状に形成しているが、図３に示す
ように、縦軸の有底筒形に形成する場合には、体積の割
に積層フィルタ５３の面積を広くできると共に敷設面積
を狭くできる。In this embodiment, in order to simplify the description and simplify the shape to reduce the manufacturing cost,
The laminated filter 53 is formed in a plate shape. However, as shown in FIG. 3, when the laminated filter 53 is formed in a cylindrical shape with a bottom on the vertical axis, the area of the laminated filter 53 can be increased relative to the volume and the installation area can be increased. Can be narrowed.
【００９６】上記積層フィルタ５３を構成する各フィル
タ５３Ａ・５３Ｂ・５３Ｃの素材はポリプレピレン繊維
に特に限定されるものではなく、具体的には、例えば、
天然繊維、合成繊維或いはこれらの混合物、延伸合成樹
脂フィルム、発泡合成樹脂、合成樹脂の可溶混練物を溶
出して形成した多孔質体、セラミックス多孔質体などを
用いることができ、又、繊維を用いる場合には、その組
織は編成組織であっても、織成組織であっても、不織組
織であっても、フェルトであってもよい。The material of each of the filters 53A, 53B, 53C constituting the laminated filter 53 is not particularly limited to polypropylene fiber, and specifically, for example,
A natural fiber, a synthetic fiber or a mixture thereof, a stretched synthetic resin film, a foamed synthetic resin, a porous body formed by eluting a soluble kneaded product of a synthetic resin, a ceramics porous body, or the like can be used. When used, the tissue may be a knitted tissue, a woven tissue, a non-woven tissue, or a felt.
【００９７】上記天然繊維は有機のものと無機のものと
に分類され、有機天然繊維としては、綿、スフ、パルプ
などの植物性繊維、羊毛、牛毛、豚毛、馬毛などの絨
毛、絹などの動物性繊維がその例として挙げられ、ま
た、無機天然繊維としてはガラス繊維などのセラミック
繊維、ロックウール、アスベストなどがその例として挙
げられる。The above-mentioned natural fibers are classified into organic fibers and inorganic fibers. Organic natural fibers include vegetable fibers such as cotton, staple fiber and pulp, villi such as wool, cow hair, pig hair and horse hair, and silk. Examples thereof include animal fibers, and examples of the inorganic natural fibers include ceramic fibers such as glass fibers, rock wool, and asbestos.
【００９８】上記合成繊維は有機のものと無機のものと
に分類され、有機合成繊維としてはポリアミド繊維、ア
クリル繊維、ポリエステル繊維、アセテート繊維などが
その例として挙げられ、無機合成繊維としてはカーボン
繊維、ボロン繊維などがその例として挙げられる。The above synthetic fibers are classified into organic ones and inorganic ones. Examples of the organic synthetic fibers include polyamide fibers, acrylic fibers, polyester fibers and acetate fibers, and the inorganic synthetic fibers include carbon fibers. , Boron fibers and the like can be cited as examples.
【００９９】もっとも、各フィルタの素材は処理される
気体中に含まれる物質と反応して崩壊したり、腐食され
たりしない素材を用いることが好ましい。However, it is preferable to use a material that does not decompose or corrode by reacting with the substance contained in the gas to be treated.
【０１００】なお、ここで複数層のフィルタ５３Ａ・５
３Ｂ・５３Ｃを積層するということは、各層のフィルタ
５３Ａ・５３Ｂ・５３Ｃが順に密着して設けられるとい
う意味であって、必ずしも各層のフィルタ５３Ａ・５３
Ｂ・５３Ｃが例えば接着などの手法により不可分に一体
化されなくても良い。Here, a plurality of layers of filters 53A.5 are provided.
Stacking 3B and 53C means that the filters 53A, 53B and 53C of the respective layers are provided in close contact with each other in order, and the filters 53A and 53C of the respective layers are not necessarily provided.
The B / 53C may not be inseparably integrated by a technique such as adhesion.
【０１０１】又、上記積層フィルタ５３は補強材で補強
することが可能であり、この補強材としては、例えば金
属、合成樹脂などからなる有孔板、網がその例として挙
げられる。この補強材は積層フィルタ５３の何れかの層
のフィルタに接着、ビス止め、リベット止め、係着など
の方法によって固定してもよく、また、どのフィルタと
も結合しなくてもよい。The laminated filter 53 can be reinforced with a reinforcing material, and examples of the reinforcing material include a perforated plate made of metal or synthetic resin, and a net. This reinforcing material may be fixed to a filter of any layer of the laminated filter 53 by a method such as adhesion, screwing, riveting, and fastening, or may not be connected to any filter.
【０１０２】更に、上記積層フィルタ５３は樹脂含浸に
より補強してもよく、この場合、樹脂はいずれか１層の
フィルタのみに含浸させてもよく、複数層のフィルタに
含浸させてもよく、又、全層のフィルタに含浸させても
よい。Further, the laminated filter 53 may be reinforced by impregnation with a resin. In this case, the resin may be impregnated only in any one layer of the filters, or may be impregnated in a plurality of layers of the filter, or Alternatively, the filters of all layers may be impregnated.
【０１０３】上述したように、微粒子粉塵発生源１から
ダクト２、液分離装置３及び中間ダクト４を介して集塵
室５２に導入された気体からは、油分と、水分と、粉塵
の一部分が除去されているが、粉塵、特に粒径０．０１
μｍ以上の微粒子状の粉塵を多量に含んでいる。As described above, from the gas introduced from the fine particle dust generation source 1 into the dust collecting chamber 52 through the duct 2, the liquid separating device 3 and the intermediate duct 4, oil, water and a part of dust are contained. Removed but dust, especially particle size 0.01
It contains a large amount of fine particulate dust of μm or more.
【０１０４】積層フィルタ５３に微粒子粉塵を含む気体
を貫流させると、図２に示すように、第１層フィルタ５
３Ａの目ａの大きさよりも粒径の大きい塵埃は全て第１
層フィルタ５３Ａに捕獲され、捕獲された塵埃が第１層
フィルタ５３Ａの目ａを塞ぐ面積は次第に広くなる。When a gas containing fine particle dust is made to flow through the laminated filter 53, as shown in FIG.
All dust with a particle size larger than the size of the eye a of 3A is first
The area where the dust captured by the layer filter 53A and blocking the eye a of the first layer filter 53A gradually increases.
【０１０５】これにより、第１層フィルタ５３Ａの目ａ
の平均的大きさは小さくなるが、ここで塵埃が球形であ
り、フィルタの目が正方形であると仮定し、第１層フィ
ルタ５３Ａの目ａと同じ大きさの塵埃が第１層フィルタ
５３Ａの目ａに捕獲されたと考えると、塵埃が詰まった
目ではその目の大きさの約０．１１倍以下の塵埃が通過
できることになる。Thus, the eye a of the first layer filter 53A is
However, assuming that the dust has a spherical shape and the eyes of the filter are square, the dust having the same size as the eye a of the first-layer filter 53A has a smaller size than that of the first-layer filter 53A. Assuming that the eye a is trapped, it is possible for an eye clogged with dust to pass about 0.11 times the size of the eye or less.
【０１０６】この値は第１層フィルタ５３Ａがほぼ完全
に目詰まりした状態での理論的な集塵限界粒径である
が、この状態では圧力損失が非常に大きくなり、微粒子
粉塵を含有した気体を積層フィルタ５３に貫流させるた
めには非常に大型で、高出力の送風機７が必要になる。This value is the theoretical particle size limit for dust collection when the first layer filter 53A is almost completely clogged, but in this state the pressure loss becomes extremely large, and the gas containing fine particle dust is used. In order to let the air flow through the laminated filter 53, the blower 7 having a very large size and a high output is required.
【０１０７】そこで、装置の小型化及び小能力化を図る
ため、実際には、積層フィルタ５３の圧力損失が小さい
うちに積層フィルタ５３の交換時期が設定され、この交
換時期では送風機７に過度の負担を与えないようにされ
る。Therefore, in order to reduce the size and the capacity of the device, the replacement time of the laminated filter 53 is actually set while the pressure loss of the laminated filter 53 is small. Not burdened.
【０１０８】図２の模式図に示すように、第１層フィル
タ５３Ａと第２層フィルタ５３Ｂとの境界では、第１層
フィルタ５３Ａの目ａはこれよりも目の大きさが小さい
第２層フィルタ５３Ｂの目ｂによって分割され、また、
第２層フィルタ５３Ｂの目ｂの一部分が第１層フィルタ
５３Ａの目ａによって分割される。As shown in the schematic view of FIG. 2, at the boundary between the first-layer filter 53A and the second-layer filter 53B, the eye a of the first-layer filter 53A is the second layer whose eye size is smaller than this. It is divided by the eye b of the filter 53B, and
A part of the eye b of the second layer filter 53B is divided by the eye a of the first layer filter 53A.
【０１０９】このため、第１層フィルタ５３Ａと第２層
フィルタ５３Ｂとの境界での目の平均値は第２層フィル
タ５３Ｂの目ｂの大きさよりも小さくなり、この境界に
第２層フィルタ５３Ｂの目ｂの大きさよりも小さい塵埃
が多量に捕獲され、これにより、この境界の実質的な目
の大きさは第２層フィルタ５３Ｂの目ｂの大きさよりも
かなり小さくなる。Therefore, the average value of the eyes at the boundary between the first-layer filter 53A and the second-layer filter 53B becomes smaller than the size of the eye b of the second-layer filter 53B, and the second-layer filter 53B at this boundary. A large amount of dust smaller than the size of the eye b is captured, so that the substantial size of the eye of this boundary is considerably smaller than the size of the eye b of the second layer filter 53B.
【０１１０】フィルタ５３Ａ・５３Ｂ・５３Ｃの積層
数、各層のフィルタ５３Ａ・５３Ｂ・５３Ｃの目ａ・ｂ
・ｃの大きさなどにより最終層のフィルタ（ここでは第
３層フィルタ５３Ｃ）とその前層のフィルタ５３Ｂとの
境界でも実質的な目の大きさが決定され、積層フィルタ
５３の集塵限界粒径が決まる。The number of layers of the filters 53A, 53B, 53C, and the numbers a, b of the filters 53A, 53B, 53C of each layer.
The substantial mesh size is determined even at the boundary between the final layer filter (here, the third layer filter 53C) and the previous layer filter 53B depending on the size of c, etc. The diameter is decided.
【０１１１】現実には最終層のフィルタ５３Ｃの目ｃの
大きさが１μｍ以上のものしか製造できないが、適宜第
２層のフィルタ５３Ｂの目の大きさと第３層のフィルタ
５３Ｃの目の大きさを選定することにより集塵限界粒径
を０．０１μｍ〜５０μｍ程度とすることができ、この
実施例では集塵限界粒径を０．０１μｍとすることがで
きる。In reality, only the final layer filter 53C having a size of the eye c of 1 μm or more can be manufactured. However, the size of the second layer filter 53B and the size of the third layer filter 53C are appropriately adjusted. By selecting, the dust collection limit particle size can be set to about 0.01 μm to 50 μm, and in this embodiment, the dust collection limit particle size can be set to 0.01 μm.
【０１１２】この積層フィルタ５３に導かれた気体は、
油分及び水分が除去されているので、積層フィルタ５３
に油分や水分が付着するおそれはないので、積層フィル
タ５３の目詰まりの進行が油分や水分によって加速され
ることがなく、長期間にわたって０．０１μｍ以上の微
粒子粉塵を捕集できるようになる。The gas introduced to the laminated filter 53 is
Since the oil and water have been removed, the laminated filter 53
Since there is no risk of oil or water adhering to, the progress of clogging of the laminated filter 53 is not accelerated by the oil or water, and it becomes possible to collect fine particle dust of 0.01 μm or more for a long period of time.
【０１１３】なお、本発明において積層フィルタ５３の
フィルタ５３Ａ・５３Ｂ・５３Ｃの層数は３層に限定さ
れず、４層以上にしてもよい。In the present invention, the number of layers of the filters 53A, 53B and 53C of the laminated filter 53 is not limited to three and may be four or more.
【０１１４】このようにして油分、水分及び微粒子粉塵
を除去された気体には、有害ガスが含まれているので、
この気体を有害ガス処理装置１３に導入し、有害ガス処
理装置１３内で主として酸化、還元、中和などの化学処
理や活性炭やセオライト等による吸着や吸収によって無
害化してから、排気ダクト６から大気中に放出するよう
にしている。Since the gas from which oil, water and fine particle dust have been removed in this way contains harmful gas,
This gas is introduced into the harmful gas treatment device 13, and is harmless mainly in the harmful gas treatment device 13 by chemical treatment such as oxidation, reduction, neutralization, or adsorption or absorption by activated carbon, theolite, or the like, and then from the exhaust duct 6 to the atmosphere. I'm trying to release it inside.
【０１１５】この装置において、積層フィルタ５３は、
この実施例のように、１つの集塵室５２内に１つの積層
フィルタ５３を設けるだけでもよいが、例えば図４、図
５又は図６の各模式図に示すように、１つの集塵室５２
に複数の積層フィルタ５３を並列的に設けることは妨げ
ない。In this apparatus, the laminated filter 53 is
As in this embodiment, only one laminated filter 53 may be provided in one dust collecting chamber 52. However, as shown in each schematic diagram of FIG. 4, FIG. 5 or FIG. 52
It is not hindered to provide a plurality of laminated filters 53 in parallel with each other.
【０１１６】１つの集塵室５２に複数の積層フィルタ５
３を並列的に設ける場合には、図５及び図６に示すよう
に、この複数の積層フィルタ５３の中から選択された１
又は複数の積層フィルタ５３に選択的に気体を導くフィ
ルタ選択手段５８を設け、これら複数の積層フィルタ５
３の中の１つを交換している間に他の積層フィルタ５３
に気体を貫流させて、長期間にわたって集塵能力を一定
以上に保持させると共に、半導体の製造を中断すること
なく積層フィルタ５３を交換できるようにすることがで
きる。A plurality of laminated filters 5 are provided in one dust collecting chamber 52.
When 3 are provided in parallel, one selected from the plurality of laminated filters 53 as shown in FIGS. 5 and 6.
Alternatively, a filter selection means 58 for selectively introducing gas to the plurality of laminated filters 53 is provided, and the plurality of laminated filters 5 are provided.
While replacing one of the other three, the other laminated filter 53
It is possible to allow a gas to flow therethrough to maintain the dust collecting capability at a certain level or longer for a long period of time, and to replace the laminated filter 53 without interrupting the semiconductor manufacturing.
【０１１７】このフィルタ選択手段５８は、並列的に設
けられた複数の積層フィルタ５３の中から選択された１
又は複数の積層フィルタ５３に選択的に気体を導くよう
に構成してあればよい。The filter selecting means 58 is one selected from a plurality of laminated filters 53 provided in parallel.
Alternatively, it suffices that the gas is selectively guided to the plurality of laminated filters 53.
【０１１８】例えば図５に示すように、導入室５６を１
つ（又は複数）の積層フィルタ５３ごとに複数の導入小
室５６ａ〜５６ｃに区画する隔壁５８ａと、各導入小室
５６ａ〜５６ｃを中間ダクトに連通させる分岐導入路５
８ｂと、分岐導入路５８ｂの分岐点に設けられ、中間ダ
クトに導入小室５６ａ〜５６ｃを選択的に連通させる方
向制御弁５８ｃとで構成することができる。For example, as shown in FIG.
A partition 58a for partitioning a plurality of (or a plurality of) laminated filters 53 into a plurality of introduction small chambers 56a to 56c, and a branch introduction path 5 for communicating each of the introduction small chambers 56a to 56c with an intermediate duct.
8b and a direction control valve 58c provided at a branch point of the branch introduction path 58b and selectively communicating the introduction small chambers 56a to 56c with the intermediate duct.
【０１１９】又、例えば図６に示すように、浄気室５７
を１つ（又は複数）の積層フィルタ５３とごに複数の浄
気小室５７ａ〜５７ｃに区画する隔壁５８ｄと、各浄気
小室５７ａ〜５７ｃを排気ダクト６に連通させる分岐導
出路５８ｅと、分岐導出路５８ｅの集合点に設けられ、
且つ排気ダクト６に浄気小室５７ａ〜５７ｃを選択的に
連通させる方向制御弁５８ｆとでフィルタ選択手段５８
を構成してもよい。Further, for example, as shown in FIG.
One (or a plurality) of the laminated filters 53 and a partition wall 58d that divides the plurality of air purification small chambers 57a to 57c into one, a branch outlet 58e that communicates each of the air purification small chambers 57a to 57c with the exhaust duct 6, and a branch. It is provided at the gathering point of the lead-out path 58e,
Further, the filter selecting means 58 is formed by the directional control valve 58f for selectively communicating the purifying small chambers 57a to 57c with the exhaust duct 6.
May be configured.
【０１２０】もちろん、このフィルタ選択手段５８とし
ては、フィルタを選択できる構造であれば特に限定され
るものではない。Of course, the filter selecting means 58 is not particularly limited as long as it has a structure capable of selecting a filter.
【０１２１】更に、図９に示すように、液分離装置３の
出口５５に複数の集塵装置５を接続し、複数の集塵装置
の中から選択された１つ又は複数の集塵装置５に選択的
に気体を導く集塵装置選択手段を設けて、集塵装置５の
中から選択された１つ又は複数の集塵装置５に選択的に
気体を流して、長期間にわたって集塵能力を一定以上に
保持させると共に、半導体の製造を中断することなく積
層フィルタ５３を交換できるようにすることができる。Further, as shown in FIG. 9, a plurality of dust collecting devices 5 are connected to the outlet 55 of the liquid separating device 3, and one or a plurality of dust collecting devices 5 selected from the plurality of dust collecting devices 5 are connected. Is provided with a dust collecting device selecting means for selectively guiding gas to the one or more dust collecting devices 5 selected from the dust collecting devices 5, and the dust collecting capability is maintained for a long period of time. Can be held above a certain level, and the laminated filter 53 can be replaced without interrupting semiconductor manufacturing.
【０１２２】この場合、更に、各集塵装置５に複数の積
層フィルタ５３を並列的に設け、選択された積層フィル
タ５３に気体を貫流させるようにすることも可能であ
る。In this case, it is also possible to provide a plurality of laminated filters 53 in parallel in each dust collecting device 5 so that gas can flow through the selected laminated filter 53.
【０１２３】更に、この実施例において、例えば図７、
図８及び図９の各模式図に示すように、１つ（又は複
数）の集塵室５２に設けられた積層フィルタ５３と液分
離装置３との間に積層フィルタ５３の最も上流側の第１
層のフィルタ５３Ａよりも目の大きい別のフィルタを備
える予備集塵手段１１を設けることは妨げなく、この予
備集塵手段１１を設けることにより、積層フィルタ５３
の集塵能力の低下を一層長期間にわたって防止できる。Further, in this embodiment, for example, as shown in FIG.
As shown in each of the schematic diagrams of FIGS. 8 and 9, between the laminated filter 53 provided in one (or a plurality) of the dust collecting chambers 52 and the liquid separation device 3, the first upstreammost portion of the laminated filter 53. 1
It is not hindered to provide the preliminary dust collecting means 11 provided with another filter having a larger size than the layer filter 53A, and by providing this preliminary dust collecting means 11, the laminated filter 53
It is possible to prevent the deterioration of the dust collecting ability of the above for a longer period of time.
【０１２４】この予備集塵手段１１は多段に設けてもよ
く、予備集塵手段１１としては、サイクロン、スクラバ
ー、ベンチュリスクラバー、バグフィルター、電気集塵
機、ルーパ、沈降室、単層のフィルタを用いることがで
きる他、上記積層フィルタ５３と同様に構成された、集
塵限界粒径が大きい積層フィルタを用いることができ
る。The preliminary dust collecting means 11 may be provided in multiple stages. As the preliminary dust collecting means 11, a cyclone, a scrubber, a venturi scrubber, a bag filter, an electrostatic precipitator, a looper, a sedimentation chamber, or a single-layer filter is used. In addition to the above, it is possible to use a laminated filter having a large dust collection limit particle diameter and configured similarly to the laminated filter 53.
【０１２５】この場合、比較的粒径の大きい微粒子粉塵
がこの予備集塵装置１１によって捕集されるので、集塵
装置５の積層フィルタ５３に捕集される微粒子粉塵の総
量が少なくなり、集塵装置５の積層フィルタ５３の交換
周期を一層長くすることができる。In this case, since the fine particle dust having a relatively large particle size is collected by the preliminary dust collecting device 11, the total amount of the fine particle dust collected by the laminated filter 53 of the dust collecting device 5 is reduced, The replacement cycle of the laminated filter 53 of the dust device 5 can be further lengthened.
【０１２６】特に予備集塵手段１１として単層のフィル
タや積層フィルタを用いる場合には、図８及び図９に示
すように、予備集塵手段１１を積層フィルタ５３と共に
安全に廃棄できるようにするため、予備集塵手段１１を
集塵室５２内に配置することが推奨される。Especially when a single-layer filter or a laminated filter is used as the preliminary dust collecting means 11, the preliminary dust collecting means 11 and the laminated filter 53 can be safely discarded as shown in FIGS. Therefore, it is recommended to dispose the preliminary dust collecting means 11 in the dust collecting chamber 52.
【０１２７】本発明においては、微粒子粉塵を捕獲した
積層フィルタ５３の廃棄に際して、有害物質に対する不
特定多数の第三者の安全を確保するため、微粒子粉塵を
捕獲した積層フィルタ５３を密封する廃棄用容器を設け
ることが好ましい。In the present invention, in order to ensure the safety of an unspecified number of third parties against harmful substances when discarding the laminated filter 53 that has captured the particulate dust, the laminated filter 53 that has captured the particulate dust is sealed for disposal. It is preferable to provide a container.
【０１２８】この廃棄用容器は、匣体５１と別体に形成
して匣体５１を繰り返し利用できるようにし、これによ
り、メンテナンス費用を削減するようにしてもよいが、
この実施例では、安全性を高めるという観点から、例え
ば図３に示すように、上記導入口５４及び導出口５５を
匣体１の近傍で中間ダクト４或いは排気ダクト６にフラ
ンジＦ結合し、この導入路５４のフランジＦ結合点より
下流側の部分と、導出口５５のフランジＦ結合点より上
流側の部分とにそれぞれを全開閉する閉止弁５９を設
け、上記匣体５１を上記廃棄用容器に兼用し、廃棄時に
これらの閉止弁５９を閉弁して、集塵装置５から有害物
質が放散されることを防止している。This disposal container may be formed separately from the box 51 so that the box 51 can be repeatedly used, thereby reducing the maintenance cost.
In this embodiment, from the viewpoint of enhancing the safety, for example, as shown in FIG. 3, the inlet port 54 and the outlet port 55 are flange-F coupled to the intermediate duct 4 or the exhaust duct 6 in the vicinity of the casing 1, and A shut-off valve 59 for fully opening and closing a portion of the introduction path 54 on the downstream side of the flange F connecting point and a portion of the outlet 55 on the upstream side of the flange F connecting point is provided, and the casing 51 is provided with the closing container 59. Also, these stop valves 59 are closed at the time of disposal to prevent harmful substances from being emitted from the dust collector 5.
【０１２９】ところで、図３において、気体を集塵装置
５に導入するにあたり、上記に代えて、逆に、番号５５
箇所を気体の導入口とし、番号５４箇所を導出口として
も良いのである。Incidentally, in FIG. 3, when introducing the gas into the dust collector 5, instead of the above, conversely, the number 55
The location may be used as the gas inlet and the location number 54 may be used as the outlet.
【０１３０】なお、廃棄用容器を匣体５１と別体に形成
する場合には、図示はしないが、積層フィルタ５３、廃
棄用容器、或いはこれらの組立品を匣体５１に出し入れ
できるように、上記匣体５１の一部分に適当な大きさの
開口部と、この開口部を開閉する蓋とが設けられる。When the disposal container is formed separately from the casing 51, although not shown, the laminated filter 53, the disposal container, or an assembly thereof can be taken in and out of the casing 51. An opening having an appropriate size and a lid for opening and closing the opening are provided in a part of the casing 51.
【０１３１】匣体５１と別体に形成された廃棄用容器
は、集塵を行う前に、上記蓋を開いて、積層フィルタ５
３を包んだ状態で、又は、積層フィルタ５３を配置する
前に集塵室５２内に配置したり、積層フィルタ５３の廃
棄時に集塵室５２に挿入したりすればよい。The waste container, which is formed separately from the box 51, has the lid opened and the laminated filter 5 before collecting dust.
3 may be wrapped, or may be placed in the dust collecting chamber 52 before the laminated filter 53 is arranged, or may be inserted into the dust collecting chamber 52 when the laminated filter 53 is discarded.
【０１３２】そして、廃棄される積層フィルタ５３を集
塵室５２内で廃棄用容器内に密封してから集塵室５２か
ら取り出したり、集塵室５２内で積層フィルタ５３を非
密封状に包んで集塵室５２外に取り出した後、集塵室５
２外で廃棄用容器を密封したりすればよい。The discarded multilayer filter 53 is sealed in the dust container 52 in the waste container and then taken out from the dust chamber 52, or the multilayer filter 53 is unsealed in the dust chamber 52. After taking it out of the dust collection chamber 52,
2 The waste container may be sealed outside.
【０１３３】[0133]
【発明の効果】以上に説明したように、本発明装置は、
微粒子粉塵発生源と積層フィルタとの間に配置された筒
形の液分離室と、液分離室内に液分離室の軸心回りに回
転可能に設けられた回転ブラシと、この回転ブラシを回
転駆動する駆動装置とを備える液分離装置が設けられて
いるので、微粒子発生源から気体を積層フィルタに通す
前に回転ブラシに通して水分及び油分を分離する本発明
方法を実施することができる。As described above, the device of the present invention is
A cylindrical liquid separation chamber disposed between the particulate dust generation source and the laminated filter, a rotary brush rotatably provided in the liquid separation chamber around the axis of the liquid separation chamber, and the rotary brush is rotationally driven. Since the liquid separating device including the driving device is provided, it is possible to carry out the method of the present invention in which the water is separated from the water content by passing the gas from the particulate generation source through the rotary brush before passing the gas through the laminated filter.
【０１３４】そして、本発明方法によれば、水分及び油
分が除去された気体が積層フィルタに貫流されるので、
水分及び油分によって積層フィルタの目詰まりの進行が
加速されるおそれがなく、長期間にわたって０．０１μ
ｍ以上の微粒子粉塵を捕集して廃棄することができる。According to the method of the present invention, the gas from which water and oil have been removed flows through the laminated filter,
There is no risk that the progress of clogging of the laminated filter will be accelerated by water and oil, and
Fine particles of m or more can be collected and discarded.
【０１３５】本発明装置において、特に液分離室が縦軸
に配置され、この液分離室が回転ブラシの下方で開口
し、微粒子粉塵発生源に液分離室を連通させる入口と、
回転ブラシの上方で開口し、集塵装置に液分離室を連通
させる出口とを備える場合には、本発明方法において、
上記回転ブラシを縦軸心回りに回転させ、この回転ブラ
シの下側から上側に上記気体を通過させる方法を実施す
ることができ、これにより、回転ブラシによって気体か
ら分離された油分、水分及び微粒子粉塵の一部分が回転
ブラシの下流側に移動することを防止し、確実に回収す
ることができる。In the apparatus of the present invention, the liquid separation chamber is arranged on the vertical axis, and the liquid separation chamber is opened below the rotating brush, and the inlet for communicating the liquid separation chamber with the particulate dust generating source,
In the case where the opening is provided above the rotating brush and the outlet for communicating the liquid separation chamber with the dust collector is provided, in the method of the present invention,
It is possible to carry out a method of rotating the rotary brush around the vertical axis and passing the gas from the lower side to the upper side of the rotary brush, whereby the oil, water and fine particles separated from the gas by the rotary brush. It is possible to prevent a part of the dust from moving to the downstream side of the rotating brush and reliably collect the dust.
【０１３６】この場合には、油分及び水分の分離によっ
ての圧力損失が小さいので、微粒子粉塵発生源から回転
ブラシ及び積層フィルタを通って大気中に排出される気
体を形成する送風機の能力の増加を最小限度に抑えるこ
とができ、装置全体の小型化及びコンパクト化を図る上
で有利になる。In this case, since the pressure loss due to the separation of oil and water is small, it is necessary to increase the ability of the blower to form the gas discharged from the particulate dust generation source to the atmosphere through the rotary brush and the laminated filter. It can be minimized, which is advantageous in reducing the size and size of the entire apparatus.
【０１３７】又、本発明装置において、特に液分離装置
が液分離室の底部に吸水性ポリマー、吸油性ポリマー及
び吸水性ポリマーと吸油性ポリマーの積層体を備える場
合には、分離された水分或いは油分又は水分と油分をこ
のポリマーに吸収させて当該ポリマーと共に廃棄する方
法を実施することができ、これにより、分離された水分
或いは油分又は水分と油分の廃棄処理が至極容易にでき
るようになる。In the apparatus of the present invention, particularly when the liquid separating apparatus is provided with a water-absorbing polymer, an oil-absorbing polymer and a laminate of the water-absorbing polymer and the oil-absorbing polymer at the bottom of the liquid separating chamber, the separated water or It is possible to implement a method in which oil or water and oil are absorbed by this polymer and discarded together with the polymer, which makes it extremely easy to dispose of separated water or oil or water and oil.
【０１３８】本発明装置において、特に液分離室の回転
ブラシよりも下側の部分が分離可能に設けられている場
合には、廃棄物の搬出作業時に廃棄物を入れたまま液分
離室の回転ブラシよりも下側の部分を搬出することによ
り作業者が廃棄物に接触する機会を極力少なくすること
ができる結果、安全性を一層高めることができる。In the apparatus of the present invention, particularly when the lower part of the liquid separation chamber than the rotating brush is separably provided, the liquid separation chamber is rotated while the waste is being carried in at the time of carrying out the waste. By carrying out the portion below the brush, the chance of the worker coming into contact with the waste can be reduced as much as possible, so that the safety can be further enhanced.
【０１３９】又、本発明装置において、特に液分離装置
と積層フィルタとの間で気体を濾過する積層フィルタの
最も上流側のフィルタよりも目が大きい別の予備フィル
タが設けられる場合には、本発明方法において、気体を
回転ブラシと積層フィルタとの間で積層フィルタの最も
上流側のフィルタよりも目が大きい別の予備フィルタに
通す方法を実施することができる結果、これにより、積
層フィルタの交換周期を一層長くすることができる。Further, in the apparatus of the present invention, particularly when another preliminary filter having a larger eye than the most upstream filter of the laminated filter for filtering gas between the liquid separation device and the laminated filter is provided, In the method of the invention, it is possible to implement a method in which the gas is passed between the rotary brush and the laminated filter through another preliminary filter having a larger mesh than the most upstream filter of the laminated filter, which results in replacement of the laminated filter. The cycle can be made longer.
【０１４０】本発明装置において、特に液分離装置の出
口に複数の集塵装置が接続され、且つ複数の集塵装置の
中から選択された１つ又は複数の集塵装置に選択的に気
体を導く集塵装置選択手段が設けられている場合には、
これら複数の集塵装置の中の１つの集塵装置の積層フィ
ルタを交換している間に他の集塵装置の積層フィルタに
気体を流させて、長期間にわたって集塵能力を一定以上
に保持させると共に、半導体の製造を中断することなく
積層フィルタの交換ができるのである。In the apparatus of the present invention, a plurality of dust collectors are connected to the outlet of the liquid separator, and gas is selectively supplied to one or more dust collectors selected from the plurality of dust collectors. When the dust collector selection means for guiding is provided,
While exchanging the laminated filter of one of the plurality of dust collectors, gas is caused to flow through the laminated filter of the other dust collector to keep the dust collecting ability above a certain level for a long period of time. At the same time, the laminated filter can be replaced without interrupting the semiconductor manufacturing.
【０１４１】又、本発明装置において、特に液分離装置
の出口に接続される唯一又は複数の集塵装置の集塵室に
複数の積層フィルタが並列的に設けられ、その集塵室の
複数の積層フィルタの中から選択された１つ又は複数の
積層フィルタに選択的に気体を導くフィルタ選択手段が
設けられている場合には、その集塵室の複数の積層フィ
ルタの中の一つの積層フィルタを交換している間に他の
積層フィルタに気体を流させて、長期間にわたって集塵
能力を一定以上に保持させると共に、半導体の製造を中
断することなく積層フィルタの交換できるので至極有益
である。In the device of the present invention, a plurality of laminated filters are provided in parallel in the dust collecting chambers of only one or a plurality of dust collecting devices connected to the outlet of the liquid separation device, and the plurality of dust collecting chambers are provided in parallel. When a filter selecting means for selectively introducing gas to one or a plurality of laminated filters selected from the laminated filters is provided, one of the plurality of laminated filters in the dust collecting chamber is provided. It is extremely beneficial because it allows gas to flow to another laminated filter while exchanging the same to keep the dust collection ability above a certain level for a long period of time, and the laminated filter can be replaced without interrupting semiconductor manufacturing. .
【０１４２】更に、本発明装置において、集塵装置に、
更に、微粒子粉塵を捕獲した積層フィルタを密封する廃
棄用容器が設けられている場合には、本発明方法におい
て、微粒子粉塵を捕獲した積層フィルタを廃棄用容器内
に密封して廃棄する方法を実施することができる結果、
作業者が廃棄物に接触する機会を極力少なくして安全性
を一層高めることができる。Further, in the device of the present invention, the dust collector is
Furthermore, when a disposal container for sealing the laminated filter that has captured the fine particle dust is provided, the method of the present invention performs the method of sealing the laminated filter that has captured the fine particle dust in the disposal container and discarding it. As a result, you can
It is possible to further improve safety by minimizing the opportunity for the worker to contact the waste.
【０１４３】この場合、集塵装置の匣体を廃棄用容器に
兼用すれば、作業者が廃棄物に接触する機会が一層少な
くなり、安全性を一層高めることができるのである。In this case, if the box of the dust collector is also used as the waste container, the chance of the worker coming into contact with the waste is further reduced, and the safety can be further improved.
【図１】図１は、本発明装置の構成図である。FIG. 1 is a block diagram of an apparatus of the present invention.
【図２】図２は、本発明に用いられる第１層と第２層の
フィルタの関係を示す模式図である。FIG. 2 is a schematic diagram showing a relationship between a first layer filter and a second layer filter used in the present invention.
【図３】図３は、本発明の他の装置の構成図である。FIG. 3 is a block diagram of another device of the present invention.
【図４】図４は、本発明に好適に用いられる他の集塵装
置の構成図である。FIG. 4 is a configuration diagram of another dust collecting apparatus suitably used in the present invention.
【図５】図５は、本発明に好適に用いられる更に他の集
塵装置の構成図である。FIG. 5 is a configuration diagram of still another dust collecting apparatus suitably used in the present invention.
【図６】図６は、本発明に好適に用いられる更に他の集
塵装置の構成図である。FIG. 6 is a configuration diagram of still another dust collecting apparatus suitably used in the present invention.
【図７】図７は、本発明の又他の装置の構成図である。FIG. 7 is a block diagram of another apparatus according to the present invention.
【図８】図８は、本発明の更に他の装置の構成図であ
る。FIG. 8 is a configuration diagram of still another device of the present invention.
【図９】図９は、本発明の他の装置の構成図である。FIG. 9 is a block diagram of another apparatus of the present invention.
１ 微粒子粉塵発生源 ３ 液分離装置 ５ 集塵装置 ７ 送風機 ８ 吸油性ポリマー ９ 吸水性ポリマー ３１ 匣体 ３２ 液分離室 ３３ 入口 ３５ 出口 ３６ 回転ブラシ ３７ 駆動装置 ５１ 匣体 ５２ 集塵室 ５３ 積層フィルタ ５３Ａ 第１層フィルタ ５３Ｂ 第２層フィルタ ５３Ｃ 第３層フィルタ ５４ 導入口 ５５ 導出口 ５６ 導入室 ５７ 浄気室 1 Fine Particle Dust Generation Source 3 Liquid Separation Device 5 Dust Collection Device 7 Blower 8 Oil Absorbing Polymer 9 Water Absorbing Polymer 31 Cavity 32 Liquid Separation Chamber 33 Inlet 35 Outlet 36 Rotating Brush 37 Drive Device 51 Cavity 52 Dust Collection Chamber 53 Laminated Filter 53A First layer filter 53B Second layer filter 53C Third layer filter 54 Inlet port 55 Outlet port 56 Introducing chamber 57 Air purifying chamber
Claims (17)
を発生する微粒子粉塵発生源から微粒子粉塵を含有する
気体を目の大きさが上流側から下流側に順に小さくなる
３層以上のフィルタを積層した積層フィルタで濾過して
微粒子粉塵を分離して回収する半導体素子製造工程の微
粒子粉塵処理方法において、 上記微粒子粉塵発生源からの上記気体を上記積層フィル
タに通す前に回転ブラシに通して水分及び油分を分離す
ることを特徴とする半導体素子製造工程の微粒子粉塵処
理方法。1. A laminated structure in which three or more layers of filters are laminated in which the size of a gas containing fine particle dust from a fine particle dust generation source that generates fine particle dust in a semiconductor element manufacturing process decreases in order from upstream to downstream. In a method for treating fine particle dust in a semiconductor device manufacturing process in which fine particle dust is separated by a filter and collected, a gas and a gas from the fine particle dust source are passed through a rotary brush to pass moisture and oil before passing through the laminated filter. A method for treating fine particle dust in a semiconductor device manufacturing process, characterized by separating.
の回転ブラシの下側から上側に気体を通過させる請求項
１に記載の半導体素子製造工程の微粒子粉塵処理方法。2. The method for treating fine particle dust in a semiconductor device manufacturing process according to claim 1, wherein the rotary brush is rotated about a vertical axis and gas is passed from the lower side to the upper side of the rotary brush.
左右或いは上下に移動可能に形成されている請求項１又
は２に記載の微粒子粉塵処理方法。3. The fine particle dust processing method according to claim 1, wherein the rotating brush is formed so as to be rotatable at a fixed position or movable left and right or up and down.
油性ポリマー又は吸水性ポリマーと吸油性ポリマーの積
層体を配置し、分離された水分又は油或いは水分と油を
この吸水性ポリマー、吸油性ポリマー又は吸水性ポリマ
ーと吸油性ポリマーの積層体に吸収させて廃棄する請求
項１ないし３のいずれか１項に記載の半導体素子製造工
程の微粒子粉塵処理方法。4. A water-absorbent polymer, an oil-absorbent polymer, or a laminate of a water-absorbent polymer and an oil-absorbent polymer is arranged at the bottom of the liquid separation chamber, and the separated water or oil or the water and oil is separated from the water-absorbent polymer, 4. The method for treating fine particle dust in a semiconductor device manufacturing process according to claim 1, wherein the method is absorbed in an oil-absorbent polymer or a laminated body of a water-absorbent polymer and an oil-absorbent polymer and discarded.
で積層フィルタの最も上流側のフィルタよりも目が大き
い別の予備フィルタに通す請求項１ないし５のいずれか
１項に記載の半導体素子製造工程の微粒子粉塵処理方
法。5. The semiconductor device according to claim 1, wherein the gas is passed between the rotary brush and the laminated filter through another preliminary filter having a larger mesh than the most upstream filter of the laminated filter. Method of processing fine particle dust in manufacturing process.
棄用機器内に密封して廃棄する請求項１ないし５のいず
れか１項に記載の半導体素子製造工程の微粒子粉塵処理
方法。6. The method for treating fine particle dust in a semiconductor device manufacturing process according to claim 1, wherein the laminated filter that has captured fine particle dust is sealed in a disposal device and discarded.
を発生する微粒子粉塵発生源から導かれる微粒子粉塵を
含む気体を濾過する上流側から下流側に目の大きさが順
に小さくなる３層以上のフィルタを積層した積層フィル
タを有する集塵装置を設けた半導体素子製造工程の微粒
子粉塵処理装置において、 微粒子粉塵発生源と積層フィルタとの間に配置された筒
形の液分離室と、この液分離室内に液分離室の軸心回り
に回転可能に設けられた回転ブラシと、この回転ブラシ
を回転駆動する駆動装置とを備える液分離装置が設けら
れていることを特徴とする半導体素子製造工程の微粒子
粉塵処理装置。7. A filter having three or more layers in which the size of the mesh is gradually reduced from upstream to downstream for filtering a gas containing fine particle dust introduced from a fine particle dust generation source that generates fine particle dust in a semiconductor device manufacturing process. In a fine particle dust treatment apparatus in a semiconductor element manufacturing process provided with a dust collector having a laminated laminated filter, a cylindrical liquid separation chamber disposed between a fine particle dust generation source and a laminated filter, and a liquid separation chamber inside the liquid separation chamber. A fine particle dust in a semiconductor element manufacturing process, characterized in that a liquid separating device including a rotary brush rotatably provided around the axis of the liquid separating chamber and a drive device for rotationally driving the rotary brush is provided. Processing equipment.
室が回転ブラシの下方で開口し、微粒子粉塵発生源に液
分離室を連通させる入口と、上記回転ブラシの上方で開
口し、集塵装置に連通する出口とを備える請求項７に記
載の半導体素子製造工程の微粒子粉塵処理装置。8. A liquid separation chamber is arranged on the vertical axis, and the liquid separation chamber is opened below the rotary brush, and is opened above the rotary brush and an inlet for communicating the liquid separation chamber with a particulate dust generation source. The fine particle dust processing apparatus according to claim 7, further comprising: an outlet communicating with the dust collector.
されている請求項７又は８に記載の半導体素子製造工程
の微粒子粉塵処理装置。9. The fine particle dust processing device according to claim 7, wherein the rotating brush is formed in a disk shape or a spiral shape.
れる吸水性ポリマー、吸油性ポリマー又は吸水性ポリマ
ーと吸油性ポリマーの積層体を備える請求項７ないし９
いずれか１項に記載の半導体素子製造工程の微粒子粉塵
処理装置。10. The liquid separation device comprises a water-absorbent polymer, an oil-absorbent polymer, or a laminate of a water-absorbent polymer and an oil-absorbent polymer housed in the bottom of the liquid separation chamber.
The fine particle dust processing device in the semiconductor element manufacturing process according to any one of claims.
側の部分が分離可能に設けられている請求項７ないし１
０のいずれか１項に記載の半導体素子製造工程の微粒子
粉塵処理装置。11. The liquid separation chamber, wherein a portion of the liquid separation chamber below the rotating brush is separably provided.
0. A fine particle dust treatment device in the semiconductor element manufacturing process according to any one of 0.
体を濾過する積層フィルタの最も上流側のフィルタより
も目が大きい別の予備フィルタが設けられている請求項
７ないし１１のいずれか１項に記載の半導体素子製造工
程の微粒子粉塵処理装置。12. A further preliminary filter having a larger eye than the most upstream filter of the laminated filter for filtering gas between the liquid separation device and the laminated filter is provided. Item 6. A fine particle dust treatment device in the semiconductor element manufacturing process according to the item.
接続され、複数の集塵装置の中から選択された１つ又は
複数の集塵装置に選択的に気流を導く集塵装置選択手段
が設けられている請求項７ないし１２のいずれか１項に
記載の半導体素子製造工程の微粒子粉塵処理装置。13. A dust collector selection method in which a plurality of dust collectors are connected to the outlet of the liquid separation device, and the airflow is selectively guided to one or more dust collectors selected from the plurality of dust collectors. The fine particle dust processing apparatus according to any one of claims 7 to 12, wherein a means is provided.
は複数の集塵装置の集塵室に複数の積層フィルタが並列
的に設けられ、その集塵室の複数の積層フィルタの中か
ら選択された１つ又は複数の積層フィルタに選択的に気
流を導くフィルタ選択手段が設けられている請求項７な
いし１３のいずれか１項に記載の半導体素子製造工程の
微粒子粉塵処理装置。14. A plurality of laminated filters are provided in parallel in a dust collecting chamber of one or a plurality of dust collecting devices connected to an outlet of the liquid separation device, and the plurality of laminated filters in the dust collecting chamber are selected from among the plurality of laminated filters. The fine particle dust processing apparatus according to any one of claims 7 to 13, further comprising a filter selection unit that selectively guides an airflow to the selected one or more laminated filters.
積層フィルタを密封する廃棄用容器が設けられている請
求項７ないし１４のいずれか１項に記載の半導体素子製
造工程の微粒子粉塵処理装置。15. The fine particle dust treatment in the semiconductor element manufacturing process according to claim 7, wherein the dust collector is provided with a waste container for sealing the laminated filter that has captured the fine particle dust. apparatus.
体に挿抜される廃棄用容器が設けられている請求項１５
に記載の半導体素子製造工程の微粒子粉塵処理装置。16. The waste container, which is formed separately from the box of the dust collector and is inserted into and removed from the box, is provided.
The fine particle dust processing device in the semiconductor element manufacturing process according to [4].
れている請求項１６に記載の半導体素子製造工程の微粒
子粉塵処理装置。17. The fine particle dust processing device in the semiconductor element manufacturing process according to claim 16, wherein the box of the dust collector is also used as a waste container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33981294A JP3201701B2 (en) | 1994-12-28 | 1994-12-28 | Method and apparatus for treating particulate dust in semiconductor device manufacturing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33981294A JP3201701B2 (en) | 1994-12-28 | 1994-12-28 | Method and apparatus for treating particulate dust in semiconductor device manufacturing process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08186066A true JPH08186066A (en) | 1996-07-16 |
| JP3201701B2 JP3201701B2 (en) | 2001-08-27 |
Family
ID=18331056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33981294A Expired - Lifetime JP3201701B2 (en) | 1994-12-28 | 1994-12-28 | Method and apparatus for treating particulate dust in semiconductor device manufacturing process |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3201701B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000061229A (en) * | 1998-08-24 | 2000-02-29 | Zeon Kasei Co Ltd | Filter device for electrophotographic device |
| JP2003004272A (en) * | 2001-06-21 | 2003-01-08 | Seiko Epson Corp | Exhaust system |
| US7344579B2 (en) | 2004-01-06 | 2008-03-18 | Powerchip Semiconductor Corp. | Pipe trap |
| KR100847656B1 (en) * | 2006-12-21 | 2008-07-21 | 동부일렉트로닉스 주식회사 | Dry gas scrubber with powder trap |
| JP2009106945A (en) * | 2007-10-26 | 2009-05-21 | Anlet Co Ltd | Dust collector |
| JP2009248295A (en) * | 2008-04-11 | 2009-10-29 | Shibuya Kogyo Co Ltd | Filter replacing method of isolator |
| WO2016076251A1 (en) * | 2014-11-10 | 2016-05-19 | ミドリ安全株式会社 | Oil mist collection device |
| JP2019205968A (en) * | 2018-05-29 | 2019-12-05 | 加昌國際有限公司 | Filtration device |
| KR20200042289A (en) * | 2018-10-15 | 2020-04-23 | 씨에스텍 주식회사 | Powder trap apparatus in manufacturing semiconductor |
-
1994
- 1994-12-28 JP JP33981294A patent/JP3201701B2/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000061229A (en) * | 1998-08-24 | 2000-02-29 | Zeon Kasei Co Ltd | Filter device for electrophotographic device |
| JP2003004272A (en) * | 2001-06-21 | 2003-01-08 | Seiko Epson Corp | Exhaust system |
| US7344579B2 (en) | 2004-01-06 | 2008-03-18 | Powerchip Semiconductor Corp. | Pipe trap |
| KR100847656B1 (en) * | 2006-12-21 | 2008-07-21 | 동부일렉트로닉스 주식회사 | Dry gas scrubber with powder trap |
| JP2009106945A (en) * | 2007-10-26 | 2009-05-21 | Anlet Co Ltd | Dust collector |
| JP2009248295A (en) * | 2008-04-11 | 2009-10-29 | Shibuya Kogyo Co Ltd | Filter replacing method of isolator |
| WO2016076251A1 (en) * | 2014-11-10 | 2016-05-19 | ミドリ安全株式会社 | Oil mist collection device |
| JPWO2016076251A1 (en) * | 2014-11-10 | 2017-08-31 | ミドリ安全株式会社 | Oil mist collector |
| JP2019205968A (en) * | 2018-05-29 | 2019-12-05 | 加昌國際有限公司 | Filtration device |
| KR20200042289A (en) * | 2018-10-15 | 2020-04-23 | 씨에스텍 주식회사 | Powder trap apparatus in manufacturing semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3201701B2 (en) | 2001-08-27 |
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