JPH08184697A - Device removing residual ion in high speed atom beam - Google Patents

Abstract

PURPOSE: To reduce the size of whole device by reducing the radius of curvature of separation orbit of residual ion. CONSTITUTION: Along a path of ion beam 12 accelerated from an ion source 3 in a vacuum chamber 1 and directing to a target 10, a neutralizing chamber 7 equipped with an opening for passing the beam 12 is provided. By exchanging electric charge of the ion beam in the neutralizing chamber 7, it is converted to high speed atom beam 13 and residual ion included in the high speed atom beam 13 is bent and removed by magnetic field. A sleeve 22 surrounding the high speed atom beam 13 including the residual ion is provided in between magnets 20, 21 producing magnetic field. Electric potential is given to the sleeve 22 for reducing the speed of the residual ion. The sleeve 22 is longer than the length between magnetic poles 20 and 21 along the ion beam 12 passing direction.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high speed atom beam generator for injecting neutral high speed atoms in place of the conventional ion injection method in the dopant injection when manufacturing a semiconductor element. In particular, the present invention relates to a removal device for efficiently removing residual ions contained in the fast atom beam after converting the ion beam into the fast atom beam.

[0002]

2. Description of the Related Art In a semiconductor manufacturing process, in order to form an integrated circuit on a semiconductor substrate, so-called impurity doping is performed to implant a different element into the substrate. As a method for this purpose, an ion implantation method has been conventionally used. However, in this method, as the degree of integration is improved, the insulation film is destroyed due to the accumulation of ionic charges, and the implantation accuracy is reduced due to the deflection of the trajectory of incident ions due to Coulomb force.
Problems such as element destruction due to Joule heat caused by the current flowing by ion implantation have become prominent.

Therefore, it has been practiced to neutralize the ion beam in the middle to form a stream of atomic beams, which is then injected into the target semiconductor substrate. This is, for example, Japanese Patent Laid-Open No.
As shown in Japanese Patent No. 152848, a neutralization chamber for introducing an inert gas such as argon is provided in the path of an ion beam accelerated from an ion source toward a target, where a charge is generated by contact between the gas and ions. Are exchanged to electrically neutralize the ions to form a neutral fast atom beam.

Japanese Unexamined Patent Publication No. Hei 1-161699 discloses an apparatus for removing residual ions contained in a beam converted from a conventional ion beam into a fast atom beam.
This is provided with a disc-shaped blocking electrode having an opening for passing a beam on the traveling path of a fast atom beam containing residual ions, and this electrode is placed at a position facing the cathode side electrode of the source of the fast atom beam. It is arranged so that an electric potential on the anode side or higher is applied to this electrode. Therefore,
The residual ion beam traveling from the cathode side is prevented from traveling by the reverse electric field between the blocking electrode and the cathode, but the fast atom beam is not affected by the electric field, so it passes through the aperture of the blocking electrode and passes through the target side. Head to.

Further, Japanese Patent Laid-Open No. 1-220353 discloses another type of residual ion removing device.
This is one in which, after an ion beam accelerated in a vacuum chamber passes through a neutralization chamber and is converted into a fast atom beam, a vertical magnetic field is applied to the beam. The fast atom beam travels straight without being affected by the magnetic field, but the residual ions receive a force from the magnetic field in the direction perpendicular to the traveling direction, and their orbits are bent and separated from the fast atom beam.

[0006]

However, the method using the blocking electrode has a problem in that, depending on the gas concentration between the blocking electrode and the cathode, this section becomes a discharge section and the generation of the fast atom beam is hindered. . Further, when the acceleration voltage of the fast atom beam is high and reaches several tens of kV, it is not realistic because a single blocking electrode requires extremely high insulation strength to prevent the residual ions from traveling.

Further, in the method of deflecting the residual ions traveling at a high speed by using a magnetic field, a distance until the trajectory of the residual ion beam can be bent is required. Especially, the energy of the high speed atom beam is high, and several tens keV is required. This distance becomes large when it reaches to. Therefore, in a high-speed atom beam apparatus or the like, there is a problem that the distance from the portion where the magnet for removing residual ions is arranged to the target of the high-speed atom beam becomes large, and the apparatus becomes large. Further, if the magnetic field is strengthened, the radius of curvature of the separation trajectory of the residual ions can be reduced, but the magnet becomes large and the device becomes large. or,
Although the magnetic field can be strengthened by reducing the distance between the magnetic poles of the magnet, a problem arises that a part of the fast atom beam collides with the magnetic pole and is sputtered to dissipate the contaminants.

The present invention has been made in view of the above circumstances, and by reducing the radius of curvature of the residual ion separation orbit in the residual ion removing apparatus, it is possible to reduce the size of the entire apparatus and to maintain the high-speed atom beam residual. An object is to provide an ion removing device.

[0009]

The fast ion beam residual ion removal apparatus of the present invention has an opening passing through an ion beam accelerated from an ion source in a vacuum chamber toward a target. A neutralization room equipped with
A residual ion removing device for converting a charge of an ion beam in the neutralization chamber to convert into a high-speed atom beam and deflecting and removing residual ions contained in the high-speed atom beam by a magnetic field. Is provided between the magnetic poles for generating the magnetic field, and a potential for decelerating the residual ions is applied to the sleeve, and the sleeve is arranged along the traveling direction of the beam. It is characterized in that it is longer than the length of the magnetic pole.

The sleeve according to the first aspect of the present invention is
It is characterized in that it is connected to a voltage applying means outside the vacuum chamber.

The sleeve according to the second aspect of the present invention is
It is characterized in that it is connected to a high resistance arranged outside the vacuum chamber and is grounded via the high resistance.

The sleeve of the third aspect of the present invention is
It is characterized in that it is connected to a high resistance disposed inside the vacuum chamber and is grounded via the high resistance.

The sleeve of the fourth aspect of the present invention is
It is insulated from the vacuum chamber, and a deceleration potential is generated by charging residual ions contained in the fast atom beam.

[0014]

A sleeve is disposed between magnets that generate a magnetic field of the residual ion removing device on the downstream side of the neutralization chamber, and a potential for decelerating residual ions is applied to the sleeve, so that high speed passing through the sleeve is achieved. The residual ions contained in the atomic beam are decelerated at the sleeve entrance, and are strongly influenced by the magnetic field of the residual ion removing magnet. Since the radius of curvature r of the separation trajectory of residual ions is proportional to the square root of the velocity v, the distance required for separation of residual ions becomes short. Therefore, in the fast atom beam device, the position of the target to which the fast atom beam is guided can be shortened from the position of the residual ion removing device in the traveling direction of the fast atom beam, and the entire device can be downsized. .

Further, according to the first aspect of the present invention, since an arbitrary deceleration potential can be applied to the sleeve from outside the vacuum chamber, the energy level of the fast atom beam source, the strength of the magnetic field, etc. can be improved. Accordingly, an arbitrary deceleration electric field can be formed.

According to the second aspect of the present invention, the potential of the sleeve can be grasped by grounding the sleeve outside the vacuum chamber via a high resistance. Further, the deceleration potential of the sleeve can be arbitrarily adjusted by adjusting the resistance value of this high resistance.

Further, according to the third aspect of the present invention, by grounding the sleeve in the vacuum chamber through the high resistance, a mechanism for supplying a voltage to the vacuum chamber is unnecessary, and the structure of the vacuum chamber is reduced. Can be easy. By adjusting the resistance value of the high resistance in advance, the deceleration potential of the sleeve can be arbitrarily adjusted according to the energy of the beam and the like.

Further, according to the fourth aspect of the present invention, by disposing the sleeve in a state of being insulated from the vacuum chamber of the ground potential, a part of the residual ions contained in the fast atom beam adheres to the sleeve. To be charged. A deceleration effect can be given to the residual ions traveling due to the potential generated by the charged electric charges. Therefore, a mechanism for supplying a voltage to the vacuum chamber and grounding with high resistance are unnecessary, and the structure of the vacuum chamber can be greatly simplified.

[0019]

Embodiments of the present invention will be described below with reference to the accompanying drawings. In the drawings, the same reference numerals indicate the same or corresponding parts.

FIG. 1 shows a high-speed atomic beam implanter according to an embodiment of the present invention. In the figure, reference numeral 1 is a vacuum chamber having a substantially L-shape as a whole, which is evacuated by a main pump 2 to a predetermined size. Maintained at a high degree of vacuum. An ion source 3 is provided on one end side of the bending, and an accelerating section including an electrode 5 to which a high voltage is applied is provided near the ion source 3.
The bending portion 6 of the vacuum chamber is provided with a separating portion that forms a magnetic field by a magnet (not shown) and deflects the ion beam 12 to direct only desired ions toward the neutralizing portion.

The neutralization chamber 7 is provided along the line along which the ion beam 12 travels, and has an opening through which the beam passes. The neutralization chamber 7 is composed of a plurality of rooms separated by orifices, and in this example, is composed of three rooms. The orifice is formed on the central axis of each room, and its path is slightly larger than the required beam system. A supply pipe 15 connected to a supply source of an inert gas is connected to the center of the three chambers, and a flow rate adjusting valve 16 is provided in the supply pipe 15. On the other hand, the intake side of the turbo molecular pump 17 is connected to the two adjacent chambers.

The inside of the vacuum chamber 1 is maintained in a vacuum state of, for example, 1 × 10 ^-5 Torr or less by the main pump 2. In this state, ions are generated from the ion source 3,
The ions are accelerated by the accelerating unit 5 to obtain constant energy. The ion beam thus formed is subjected to a constant magnetic field in the separating portion 6 and is bent at a constant angle determined by the relationship between the mass and energy. by this,
By adjusting the magnetic field of the separation part, only the required kind of ions are bent by 90 degrees toward the neutralization part.

In the neutralization chamber 7, an inert gas such as argon is introduced from the inert gas source through the supply pipe 15 in an amount controlled by the flow control valve 16, while exhausted by the action of the turbo molecular pump 17. A flow of inert gas is formed. Since the displacement of the turbo molecular pump is set large enough, there is a pressure difference of about 10 ² between the room to which the gas is supplied and the adjacent room.
Therefore, by providing such a multi-stage chamber and a circulating exhaust system, the central chamber of the neutralization chamber 7 maintains a relatively high gas pressure of about 10 ⁴ as compared with the vacuum state of the vacuum chamber. .

When the ion beam passes through the inert gas in which such a pressure state is maintained, the ions receive the charge of the gas atoms due to the contact between the ions and the inert gas atoms, that is, by the charge exchange. It is neutralized, and exits toward the target 10 through the opening in the latter stage of the neutralization chamber 7 as a high-speed atomic beam. Since the fast atoms neutralized by the fast ions by charge exchange hardly lose the kinetic energy possessed by the ions, they travel as the fast atom beam 13 and are injected into the semiconductor wafer 10 as the target.
In this device, it is important to keep the pressure of the inert gas in the neutralization chamber 7 at a predetermined value, and if this pressure is too high, the amount of ions neutralized to become atoms is large. However, the amount of atomic beams that finally reach the target is reduced due to the increased scattering due to the interaction between the beam and the gas. On the other hand, when the pressure of the gas is too low, the contact between the gas and the ions is reduced and the neutralization rate itself is lowered.

The residual ions contained in the high-speed atomic beam 13 which have not been neutralized and which have not been neutralized are subjected to a constant magnetic field in the residual ion removing device 8 described in detail below to be deflected and removed. It The high-speed atom beam 13 goes straight as it is and is injected into a target mounted on the turntable 9 to perform the doping action of the semiconductor substrate 10.

FIG. 2 shows a residual ion removing apparatus according to the first embodiment of the present invention. In the neutralization chamber 7, the ion beam 12 is converted into a high-speed atomic beam 13, the neutralization rate of which is approximately several tens%.
However, some ions travel to the target side as residual ions without being neutralized. The fast ion beam 13 containing residual ions is subjected to a magnetic field in a direction perpendicular to the traveling direction of the fast atom beam in the residual ion removing device 8, and the residual ions are bent and separated. In the present embodiment, the residual ion removing device 8 includes two parallel plate magnets 20,
21 generates a magnetic field. The magnetic poles of the flat magnet 20 have, for example, an N pole on the upper surface and an S pole on the lower surface, and the magnet 21 also has an N pole on the upper surface and an S pole on the lower surface. Therefore, a uniform magnetic field is formed in the vertical direction, and when residual ions travel in this magnetic field from the left side of the figure, the magnetic field is in the vertical direction of the figure, so the ions are perpendicular to both. The trajectory can be bent by receiving a force in the direction perpendicular to the drawing.

The magnets 20 and 21 in the central portion of the vacuum container 1
In between, a sleeve (cylinder) 22 made of a conductive material is provided, and this sleeve 22 is provided with a collar portion 22A. Sleeve 2
The inner diameter of 2 is slightly larger than the diameter of the fast atom beam 13. The material of this sleeve is, for example, high-purity carbon graphite or silicon material, and has conductivity. Therefore, even if the high-speed atom beam collides with the inner diameter portion or the collar portion 22A of the sleeve 22, the sleeve material is prevented from being sputtered, or the contaminants are released from the sleeve material.

The sleeve 22 is fixed to the vacuum chamber 1 by an insulator, one end of which is connected to an electric wire 24, is pulled out of the vacuum chamber 1 through an airtight seal portion 23 of the vacuum chamber 1, and a voltage source 25 is provided. It is connected to the. The voltage source 25 applies a deceleration potential for decelerating the residual ions traveling in the sleeve 22, and a voltage of about 3/4 or half of the acceleration voltage of the ions is applied to the sleeve 22.
Apply to.

Assuming that the sleeve 22 having the collar portion 22A is biased by a voltage source 25 having a voltage substantially equal to the accelerated voltage of the fast atom beam, a deceleration electric field in the opposite direction substantially equal to the acceleration voltage acts. Therefore, the velocity of the residual ions becomes almost zero in the portion where the vertical magnetic field acts between the magnets 20 and 21.

However, it is difficult to apply a voltage of approximately the same level as an accelerating voltage of several tens of kV to one sleeve because it is difficult to insulate, so 3/4 to 1/1 of the acceleration voltage is applied.
A voltage of about 2 is applied to decelerate residual ions. The residual ions first receive a deceleration electric field at the collar portion 22A at the entrance of the sleeve 22, and the orbit thereof is rapidly bent in the sleeve 22 by the action of the magnetic field. Further, even if some of the residual ions collide with the inner wall of the sleeve 22, they lose their charge and return to neutral atoms. Since the sleeve 22 is made of high-purity carbon or silicon-based material as described above, problems such as emission of contaminants can be avoided. Since the potential of the sleeve 22 may be as high as several tens of kV, its corners should be rounded as much as possible to suppress the local concentration of the electric field.

Assuming that the bias voltage from the voltage source 25 is about 3/4 of the acceleration voltage, the velocity of residual ions is reduced to about 1/4 of the velocity immediately after leaving the neutralization chamber 7. Then, if the strength of the magnetic field between the magnets 20 and 21 is the same, the radius of curvature r bent by the magnetic field of the trajectory of the residual ion beam is r = k (mv) ^1/2 / H where k: proportional constant m: mass of ions v: velocity of ions H: strength of magnetic field Therefore, when the velocity of residual ions is reduced to about 1/4, the radius of curvature becomes about 1/2.

Therefore, in the conventional residual ion removing apparatus, if the distance from the magnet to the target rotary table 9 on which the semiconductor substrate is mounted is, for example, about 40 cm, the velocity of residual ions is reduced to about 1/4. By doing so, the radius of curvature of the orbit can be reduced to about 1/2, and the magnet portion of the residual ion removing device 8 and the target 10 can be reduced.
The distance between them can be shortened to about 20 cm.

FIG. 3 shows a residual ion removing device according to a second embodiment of the present invention. The residual ion removing apparatus of this embodiment is different from the first embodiment in that the sleeve 22 is connected to the voltage source to apply the bias voltage, whereas the high resistance 26 is connected to the sleeve 22. Here, the inner diameter of the sleeve 22 is approximately equal to the diameter of the fast atom beam 13. When a portion of the fast atom beam including residual ions collides with the sleeve portion 22A of the sleeve 22, the residual ions are charged on the sleeve 22. However, since the sleeve 22 is grounded via the high resistance 26, a current flows through the high resistance 26, and the sleeve 22 is self-biased by the voltage represented by the product of the current and the resistance value.

The self-bias voltage causes the residual ions in the fast atom beam 13 containing the residual ions traveling from the neutralization chamber to be decelerated by the deceleration electric field of the sleeve 22. Then, the decelerated residual ions receive a force due to the magnetic field between the magnets 20 and 21 in the sleeve 22, and their orbits can be bent, as in the first embodiment.

In this embodiment, since the self bias of the sleeve 22 is used for decelerating the residual ions, an external power source is not required. The bias voltage applied to the sleeve 22 can be measured by monitoring the voltage across the high resistance 26, and the deceleration potential of the sleeve 22 can be adjusted by adjusting the resistance value of the high resistance 26. Can be changed.

FIG. 4 shows a residual ion removing apparatus according to the third embodiment of the present invention. In this embodiment, the sleeve 22 has a high resistance 2
It is common to the second embodiment in that it is grounded via 7. However, the high resistance 27 is arranged in the vacuum chamber 1 and is different from the second embodiment in that it is grounded.
Therefore, the high resistance 27 is covered with the outer skin 28.
Similar to the sleeve 22, the outer cover 28 is made of a high-purity carbon-based or silicon-based material, which causes the high resistance 27 to be sputtered by a high-speed atom beam containing residual ions, and pollutants are generated from the high resistance 27. The problem of can be avoided.

Also in the present embodiment, the sleeve 22 is self-biased, and the deceleration effect is given to the residual ions contained in the traveling high-speed atom beam, whereby the radius of curvature of the orbit due to the magnetic field can be made small, and thus The effect that the distance between the residual ion removing device and the target can be shortened is also the same as in the above embodiment. Further, also in this embodiment, an external power source is not required, and in particular, since it is grounded in the vacuum chamber, an electrical connection mechanism from the outside into the vacuum chamber is not required, and the structure in the vacuum chamber is simplified. This can contribute to downsizing and cost reduction of the device.

FIG. 5 shows a residual ion removing apparatus according to the fourth embodiment of the present invention. Also in this embodiment, a part of the residual ions is charged on the sleeve 22 to form a deceleration electric field with respect to the residual ions, as in the above-described respective embodiments. In this embodiment, the sleeve 22 is supported by the vacuum chamber 1 by an insulator and is not electrically grounded. For this reason, no connection for external power supply and grounding is required, so that the structure in the vacuum chamber 1 can be greatly simplified.

Even if the sleeve 22 is electrically completely insulated in the vacuum chamber 1, it is considered that the potential of the sleeve 22 does not rise above the voltage at which the residual ions are accelerated. Although there is actually a leakage current, the deceleration potential does not rise to the acceleration voltage, but it is thought that a sufficient potential can be formed to decelerate the residual ions. The radius can be reduced as in the above-described embodiments.

The resistance value preferable for the self-biasing resistor is roughly calculated as follows. For example, if the beam diameter is 50 mm and a beam of 10 mA is used,
To decelerate from 0 keV to 1/4, which is 10 keV,
The resistance value is about 75 MΩ. If the velocity of the residual ions is reduced to this extent, the radius of curvature of the trajectory of the residual ions becomes approximately 1/2 when the strength of the magnetic field is the same. Therefore, if the resistance value of the resistor or the insulator between the sleeve and the ground is equal to or more than the above-mentioned value, the potential of the sleeve becomes higher and the deceleration effect on the residual ions becomes larger. As a result, the radius of curvature of the residual ion trajectory becomes smaller. Further, when the deceleration effect of residual ions is sufficiently large, the strength of the magnetic field can be reduced. As a result, the size of the magnet can be reduced, which contributes to the reduction in size and weight of the device.

FIG. 6 is an explanatory view of the residual ion removing apparatus of the first to fourth embodiments as seen from above. The residual ion removing device 8 deflects the residual ions in the fast atom beam 13 decelerated by the sleeve 22 by the force of the magnetic fields of the magnets 20 and 21 to form a residual ion beam 14 and guide it to the target 30. The magnetic field generated by the magnets 20 and 21 is the residual ion beam 1
4 are focused so that they are strong so that the radius of curvature is small on the outer peripheral side of the track, and weak so that they are large on the inner peripheral side. Further, in order to focus the residual ion beam, the magnetic poles may be formed so that the magnetic field passage distance is long on the outer peripheral side of the track and the magnetic field passage distance is short on the inner peripheral side.

The target 30 is made of high-purity carbon graphite or silicon-based material having irregularities on its surface as shown in FIG. 7, and is grounded to the inner wall of the vacuum chamber 1 although not shown. In the vicinity of the target 30, an exhaust hole 3 communicating with the vacuum pump of the vacuum chamber 1
1 is provided.

Therefore, the focused residual ion beam 14 collides with the target 30 and is absorbed by the target 30 due to the quadrangular pyramid-shaped irregularities on the surface. The residual ions are subjected to charge exchange in the target 30, return to neutral atoms, and are exhausted from the exhaust holes 31 provided in the vicinity. Atoms and the like sputtered from the target 30 due to collision of residual ions are also exhausted at the same time.

In each of the above-mentioned embodiments, the permanent magnet is used for deflecting and removing the residual ions, but it goes without saying that the magnetic field may be formed by using an electromagnet.

Further, the above-mentioned embodiment relates to a high-speed atom beam implantation apparatus for implanting high-speed atoms instead of ion implantation.
It goes without saying that it can be used for various high-speed atom beam devices that perform micromachining and the like.

[0046]

As described above, in the fast ion beam residual ion removing apparatus of the present invention, a sleeve is inserted between magnetic poles of a magnet for removing residual ions, and a deceleration potential is applied to the sleeve. Is. As a result, a deceleration electric field is formed for the residual ions, and the velocity of the residual ions is greatly reduced in the portion where the magnetic field for removing the residual ions exists.
Therefore, the residual ions are greatly deflected by the magnetic field for removing the residual ions, and the radius of curvature of the separation trajectory can be significantly reduced. Further, since the sleeve is inserted between the magnetic poles, it is possible to prevent problems such as residual ions whose orbit is bent colliding with the magnet to generate sputtering or pollutants. Therefore, the distance between the residual ion removing device and the target can be shortened or the strength of the magnetic field can be weakened, which can contribute to the reduction in size and weight of the high-speed atom beam device.

[Brief description of drawings]

FIG. 1 is an explanatory diagram showing an overall configuration of a high-speed atomic beam implanter according to an embodiment of the present invention.

FIG. 2 is an explanatory diagram of an ion residue removing apparatus according to the first embodiment of the present invention.

FIG. 3 is an explanatory diagram of an ion residue removing apparatus according to a second embodiment of the present invention.

FIG. 4 is an explanatory diagram of an ion residue removing apparatus according to a third embodiment of the present invention.

FIG. 5 is an explanatory diagram of an ion residue removing apparatus according to a fourth embodiment of the present invention.

FIG. 6 is an explanatory view of the structure of the ion residual removal apparatus of each of the above embodiments as viewed from above.

FIG. 7 is an explanatory diagram showing an example of the structure of a target of a residual ion beam.

[Explanation of symbols]

 1 Vacuum chamber 7 Neutralization chamber 12 Ion beam 13 High-speed atom beam 20,21 Magnet (magnetic pole) 22 Sleeve 25 Voltage source 26,27 High resistance

Claims (14)

[Claims] 1. A neutralization chamber having an opening passing through the ion beam accelerated from an ion source in a vacuum chamber toward a target is provided in the vacuum chamber, and the ionization chamber is provided in the neutralization chamber. A residual ion removing device for converting a charge into a high-speed atom beam by exchanging the electric charges, and deflecting and removing residual ions contained in the high-speed atom beam by a magnetic field, the sleeve enclosing the high-speed atom beam containing the residual ions. Between the magnetic poles for generating the magnetic field, a potential for decelerating the residual ions is applied to the sleeve, and the sleeve is longer than the length of the magnetic pole along the traveling direction of the beam. High-speed atomic beam residual ion removal device characterized by the above. 2. The fast ion beam residual ion removing device according to claim 1, wherein the sleeve is connected to a voltage applying means outside the vacuum chamber. 3. The fast atom beam residue according to claim 1, wherein the sleeve is connected to a high resistance disposed outside the vacuum chamber and grounded via the high resistance. Ion removal device. 4. The fast atom beam residue according to claim 1, wherein the sleeve is connected to a high resistance disposed inside the vacuum chamber and grounded via the high resistance. Ion removal device. 5. The fast atom beam according to claim 1, wherein the sleeve is insulated from the vacuum chamber, and a deceleration potential is generated by being charged from residual ions contained in the fast atom beam. Residual ion removal device. 6. The fast ion beam residual ion removing device according to claim 1, wherein the opening of the sleeve on the neutralization chamber side is provided with a collar. 7. The fast atom beam according to claim 1, further comprising a unit for focusing the residual ions separated from the fast atom beam, and a target for guiding the focused residual ion. Residual ion removal device. 8. The residual ion removing device for a fast atom beam according to claim 7, wherein the focusing means is composed of a magnetic pole. 9. The fast ion beam residual ion removing apparatus according to claim 7, wherein the target has irregularities on its surface. 10. The residual ion removing device for a fast atom beam according to claim 7, wherein the target is carbon graphite or a silicon material. 11. The fast ion beam residual ion removing device according to claim 7, wherein a vacuum exhaust hole is provided near the target. 12. A high-speed atomic beam device comprising means for guiding a high-speed atomic beam passing through the high-speed atomic beam residual ion removing device according to any one of claims 1 to 11 to a target. 13. Along the path of an ion beam accelerated from an ion source in a vacuum chamber to a target,
A neutralization chamber having an opening for passing the beam is provided, and the ion beam is exchanged in the neutralization chamber to convert into a fast atom beam, and residual ions contained in the fast atom beam are generated by a magnetic field. In a high-speed atom beam device that deflects and removes the high-speed atom beam to a target, a high-speed atom beam including residual ions neutralized in a neutralization chamber is provided with a deceleration sleeve in the action space of the magnetic field, A method for removing residual ions from a fast atom beam, which comprises decelerating the residual ions by applying a deceleration potential to the sleeve, deflecting the residual ions largely by the magnetic field, and separating and removing the residual ions from the fast atom beam. 14. Focusing the residual ion beam,
The method for removing residual ions from a fast atom beam according to claim 13, wherein the method is directed to a target for residual ions.