JPH0817715A - X-ray apparatus using sr light source - Google Patents

Abstract

PURPOSE:To execute the ageing operation by means of SR light of an X-ray mirror by a method wherein, when an X-ray apparatus provided with the X-ray mirror is started or the X-ray mirror is replaced, an SR ring itself and the ordinary operating state of a plurality of other X-ray apparatuses connected to one SR ring are not affected. CONSTITUTION:An X-ray apparatus is constituted in such a way that SR light which is radiated from an SR light source is shone at an X-ray mirror 6 arranged in a vacuum atmosphere. In the X-ray apparatus, an intensity adjusting filter is provided between the SR light source and the X-ray mirror, an ageing operation is executed while the intensity of the SR light shone at the X-ray mirror from the SR light source is being adjusted. In addition, the intensity adjusting filter is constituted so as to adjust the intensity of the SR light while the linear absorption coefficient in a gas of the SR light is being changed by changing the pressure of the gas.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an X-ray device connected to an SR ring, and more particularly, when an X-ray device having an X-ray mirror is started up or the X-ray mirror is replaced, the SR
It is intended to efficiently carry out the withdrawal of the X-ray mirror by the SR light without affecting the normal operating state of the ring itself and a plurality of other X-ray devices connected to one SR ring.

[0002]

2. Description of the Related Art As one of conventional examples of an X-ray apparatus configured to irradiate an X-ray mirror arranged in a vacuum with SR light emitted from an SR light source, S emitted from an SR light source is used.
The case of an X-ray exposure apparatus that exposes and transfers a circuit pattern formed on a mask onto a wafer using R light will be described. The transfer (lithography) of a semiconductor circuit pattern onto a wafer surface for semiconductor manufacturing using X-rays is performed, for example, in a dynamic random memory (DRAM) which is one of semiconductor memory elements. 256 high-capacity and high-integration memory capacities
Mass production of megabit DRAM is expected to be implemented,
It is required to accurately transfer an ultrafine circuit pattern having a circuit design dimension of 0.25 μm or less. As an exposure apparatus for this purpose, it has been considered to use KrF or ArF excimer laser light, which has a shorter wavelength than ultraviolet rays from a conventional mercury lamp, and X-rays having a shorter wavelength as an exposure light source. X-ray lithography technology is expected to be realized for ultra-high integration semiconductors (ULSI) after 256-megabit DRAM, but at present, in terms of accuracy, throughput, etc., the required performance as ULSI mass-production technology is still complete. Does not meet.

X-ray lithography is used as an exposure light source.
In recent years, since the synchrotron radiation (SR light) can be used, conventional X-ray tubes and plasma X
It is expected that problems such as X-ray light source size, intensity, and resolution in X-ray lithography using a radiation source will be greatly improved. FIG. 6 shows an outline of an X-ray exposure apparatus using SR light. This can be done, for example, in the Journal of Photopolymer Science and Technology (Journal of Photopolymer Science and Technology).
Technology) Vol. 6, No. 4 (1993) p.
445-456 [Synchrotron Radiation X-Ray Lithogr
aphy for The Fabrication of Sub-Quartermicron Larg
e-Scale-Integrated Circuits]). In FIG. 6, 1 is an electron storage ring as an SR light source, 2
Is a beam line for guiding the light in the wavelength range suitable for exposure from the SR light source 1 to the exposure device, and 3 is a U formed on the X-ray mask 4 by the light (X-ray) from the beam line 2.
Stepper 6a, 6b is an X-ray mirror, 7 is a window made of Be thin film, 8 is a shock wave delay tube, 9 is a high-speed shutoff valve, for transferring the LSI circuit pattern to the photosensitive resist coated on the wafer surface 5. is there. FIG. 7 shows a principle explanatory diagram in which the circuit pattern on the X-ray mask 4 in the stepper 3 is transferred onto the wafer 5 by SR light. In FIG. 7, 21 is an absorber corresponding to the circuit pattern on the X-ray mask 4, and 22 is a photosensitive resist applied on the wafer 5. In X-ray lithography using SR light, as shown in FIG. 7, the X-ray mask 4 and the wafer 5 are opposed to each other with a minute gap (20 to 40 μm) in between,
The pattern 21 is transferred as a shadow picture of the circuit pattern 21 formed on the X-ray mask 4 by SR light on the surface of the wafer 5 at a dimensional ratio of 1: 1. Therefore, the absorber 21 used as a circuit pattern on the X-ray mask 4 has a sufficiently large absorption coefficient for SR light, that is, the X-ray wavelength, and a material having a large light-shielding effect, for example,
It is formed by forming a material such as gold, tantalum, or tungsten on a thin film substrate (membrane) such as silicon.
On the other hand, a photosensitive resist 22 having the required sensitivity and resolution for the SR light wavelength used is coated on the surface of the wafer 5 and shields light corresponding to the circuit pattern on the X-ray mask 4.
The shadow of the circuit pattern as the transmitted SR light intensity pattern exposes the resist 22 on the surface of the wafer 5,
Transcribed. By developing the transferred photosensitive resist 22, the circuit pattern on the X-ray mask 4 is obtained as a resist pattern on the surface of the wafer 5. This lithography process of exposure, transfer, and development is, for example, a series of processes of film formation → lithography → processing in the current DRAM manufacturing process.
It is repeated up to 30 times to form a DRAM laminated structure.

Therefore, in exposure and transfer in each process layer in the stepper 3, the gap length between the X-ray mask 4 and the wafer 5 is set, and the chip-corresponding exposure area (field) between the X-ray mask 4 and the wafer 5 is set. Position adjustment, step movement from field to next field for exposing and transferring a plurality of fields on one wafer 5, attachment / detachment of X-ray mask 4 and wafer 5 from stepper 3, etc. with high accuracy. In addition, high-speed, automatic implementation is required. At the same time, it is required for the SR light source 1 and the beam line 2 to supply stable, reproducible and uniform intensity SR light to the stepper 3.

The beam line 2 is an ultrahigh vacuum atmosphere in which the SR light generated from the SR ring 1 is irradiated with light in a wavelength range suitable for exposure (typically 0.5 to 1.5 nm), as described above. It is for leading out from the SR ring 1 to the stepper 3 in the exposure atmosphere composed of the atmosphere or He.
In order to prevent the SR light from being attenuated in the beam line 2, the beam line 2 has an ultrahigh vacuum atmosphere like the SR ring 1. Since the ultrahigh vacuum atmosphere of the beam line 2 and the exposure atmosphere of the stepper 3 are vacuum-separated, the attenuation of SR light is relatively small and the thin film of Be that is excellent in mechanical strength is used.
Is used as the window material 7. The reflection characteristics of the X-ray mirrors 6a and 6b and the absorption characteristics of the Be thin film window 7 which is a vacuum partition are used to select the required wavelength range. FIG.
The reflection characteristics of the X-ray mirrors 6a and 6b at each incident angle θ _in and the absorption characteristics of the Be window 7 at each film thickness t are shown in (a) and (b), respectively. The X-ray mirrors 6a and 6b are not only used as low-pass filters for selecting the wavelength range, but also collect SR light from the SR ring 1 to improve throughput and increase SR light intensity supplied to the stepper 3. It may also have the function to do. FIG. 6 shows an outline of the beam line 2 in which the function of condensing the SR light is realized by the two X-ray mirrors 6a and 6b.

By the way, in an actual SR lithography system, for example, in the literature (The Society of Photo-Optical Instrumentation E
ngineers) Vol. 1671 (1992) p. 299
~ 311 [A facility for X-ray lithography II-Aprog
ress report]) and (36th International Symposium on Ele, Ion, and Photon Beams)
ctron, Ion, and Photon Beams) (1992) p. 1-1
4 [Prospects for X-Ray Lithography]), one SR ring 1 may have a plurality of, for example, 1
0 or more beam lines 2 are installed, and SR light is supplied to the stepper 3 connected to each beam line 2 to perform exposure and transfer. That is, the operating state of the SR ring 1 affects not only one beam line 2 and stepper 3, but all SR lithography systems connected to the SR ring 1. This is the reason why the operating rate and stability of the SR ring 1 are desired. On the other hand, if there is a situation in which the SR ring 1 is affected by a problem such as a malfunction occurring in a system including one beam line 2 and a stepper 3 or a maintenance stoppage, the rest of the systems are connected via the SR ring 1. Will be affected. For example, when the Be thin film window 7 which is a vacuum partition wall with the exposure atmosphere at the tip of the beam line 2 is damaged for some reason, the vacuum breakage is S.
Since it does not propagate to the R ring 1, a high-speed shut-off valve 9 capable of quickly shutting off the vacuum is installed in the beam line 2,
e The signal is actuated by a rapid vacuum level decrease signal accompanying the vacuum break when the thin film window 7 is broken. The operating time until the full vacuum shutoff of the high speed shutoff valve 9 is about several meters.
Although it is about 20 ms from s, the shock wave propagation into the vacuum atmosphere due to the vacuum break is generally SR in the beam line 2 at a velocity about the speed of sound of the inflowing gas, in this case the exposure atmosphere gas.
Go towards ring 1. Therefore, the high-speed shutoff valve 9
There is a case where the shock wave propagation cannot be sufficiently coped with the operation time of, and a device for delaying the shock wave propagation is required. FIG. 6 is also an example in which a vacuum protection device for these SR rings 1 is incorporated in the beam line 2, and a shock wave delay tube 8 for delaying shock wave propagation due to damage to the Be thin film window 7 is provided. Thus, one beam line 2,
The beamline 2 has a function of protecting the SR ring 1 from a malfunction of the stepper 3 and an accident.

By the way, the X-ray mirrors 6a and 6b are incorporated in the beam line 2 as shown in FIG. 6, but the X-ray mirrors 6a and 6b may be replaced regularly or irregularly. There is a case. There are several reasons for exchanging them, but typical ones are X-ray mirrors 6a and 6a.
This is the case where the decrease in the intensity of the exposure SR light due to the decrease in the reflectance of b exceeds the allowable value. It is said that the cause of the decrease in the reflectance of the X-ray mirrors 6a and 6b is carbon adhesion on the mirror surface due to a kind of photo-assisted reaction due to SR light. It is known that the reduction of the mirror reflectance due to the carbon deposition is remarkable as the mirror installation environment is low vacuum, and the reflectance is drastically reduced at the day level if it is about 10 ⁻⁶ Torr. In general, X-rays mirrors 6a used in the SR available, 6b installation environment degree of vacuum is must be kept at ultra high vacuum of even ^10-2 9-10 ^over 8 Torr during SR light irradiation. Even at this level of ultra-high vacuum, carbon is gradually deposited on the surfaces of the mirrors 6a and 6b, and the mirror reflectance gradually decreases on a monthly or yearly basis. Also, the replacement of the X-ray mirrors 6a and 6b is necessary in the following situations. That is, since the temperature of the X-ray mirror substrate is increased by absorbing SR light, the X-ray mirror 6 is separated from the coating surface due to the difference in thermal expansion from the coating reflection surface.
Damage to a and 6b may be the reason for replacement.

A normal procedure for replacing the X-ray mirrors 6a and 6b is shown in FIG. As shown in the figure, the X-ray mirror 6a incorporated in the beam line 2 in step S1,
The mirror chamber for storing 6b is temporarily released from the ultra-high vacuum to the atmosphere, and the mirror 6 to be replaced is replaced in step S2.
Remove a and 6b from the mirror holding part in the chamber. Thereafter, the exchange mirrors 6a and 6b are attached to the mirror holding portion in step S3, and the chamber portion is evacuated to the ultrahigh vacuum again in step S4, so that SR light can be introduced. However, the X-ray mirrors 6a, 6
When SR b is first irradiated with SR light, desorption of adsorbed molecules from the surfaces of the mirrors 6a and 6b due to photodetachment occurs remarkably, and the degree of environmental vacuum sharply decreases. Therefore, in step S5, the so-called SR light killing is performed after the X-ray mirrors 6a and 6b are first irradiated with SR light. In this case, the dying by the SR light is the dying of the X-ray mirrors 6a and 6b. However, in steps S6 and S7, the SR ring 1 accumulated current (that is, the generated SR light intensity) gradually changes from the low current state to the X-ray state. Mirror 6
SR light is irradiated to a and 6b. At this time, in step S8, the X-ray mirrors 6a and 6b have a predetermined vacuum degree (for example, 2 ×
To 10 ^over 8 Torr) so as not to fall below a. Thus
The SR light intensity applied to the mirrors 6a and 6b is gradually increased until the required SR light intensity is reached in step S9, that is, S
The R ring 1 accumulated current value is increased. This is shown in FIG. The figure shows the data of dying by SR light on the two X-ray mirrors 6a and 6b shown in FIG. 6 in the SR lithography system actually developed by the present inventors. In the figure, the horizontal axis is cumulative irradiation SR
Cumulative SR ring accumulated current value corresponding to light intensity, vertical axis is S
It is the degree of vacuum in the mirror installation environment per R ring accumulated current. From this figure, the case of the mirror 6a, for example, 1 × 10 ^over the degree of vacuum in the X-ray mirror installation environment by irradiation of SR light intensity of SR ring accumulation current 200mA is not more than 2 × 10 ^over 8 Torr ^Since it must be ¹⁰ Torr / mA, the cumulative S required for killing by SR light is
It is shown that the R ring accumulated current value is about 10 ⁴ mA · hr. By the way, even if the killing by SR light can be carried out with the accumulated current value of 50 mA on average, it takes 200 hours, about 10 days, to complete the killing by SR. Generally, since the SR ring accumulated current value at the time of dying by the initial SR light has to be started from about 1 mA, it may actually take about one month. Thus, after the wiping is completed, the SR optical axes of the exchange mirrors 6a and 6b are adjusted in step S10, and the series of procedures relating to the X-ray mirror exchange shown in FIG. is there.

[0009]

Since the conventional X-ray apparatus using the SR light source is constructed and operates as described above, the X-ray apparatus can be operated until the series of procedures for replacing the X-ray mirrors 6a and 6b is completed. Not only the beam line 2 and stepper 3 cannot be operated at all, but while the SR ring accumulated current is set low due to SR light out of the X-ray mirrors 6a and 6b, other beam lines and steppers also do the same. It means that it is not in a state where it can be operated normally. This is 1
Not only the corresponding SR lithography system for replacing the X-ray mirrors 6a, 6b on the book beam line,
SR Lithography is adopted as a semiconductor manufacturing mass production system, which means that the operation of all other SR Lithography systems connected to one SR ring 1 must be stopped at the same time. This is a very big problem in doing so. The X-ray mirror 6
It is necessary to kill a and 6b when starting up the device.
I have a similar problem. Further, although the X-ray exposure apparatus has been taken as an example of the X-ray apparatus using the SR light source, other X-ray apparatuses having an X-ray mirror may also be worn out at the time of startup and replacement of the X-ray mirror. It requires driving and has similar problems.

The present invention has been made in order to solve the problems of the conventional ones described above, and when the X-ray apparatus having the X-ray mirror is started up or when the X-ray mirror is replaced, the SR ring itself, Another object of the present invention is to efficiently kill the X-ray mirror with SR light without affecting the normal operating state of a plurality of other X-ray devices connected to one SR ring.

[0011]

An X-ray apparatus using an SR light source according to the invention as set forth in claim 1 irradiates an X-ray mirror arranged in a vacuum atmosphere with SR light emitted from the SR light source. The X-ray apparatus configured as described above includes an intensity adjustment filter that adjusts the intensity of the SR light with which the X-ray mirror is irradiated.

The X-ray apparatus using the SR light source according to the invention of claim 2 is the same as that of claim 1, wherein the intensity adjusting filter absorbs the SR light in the gas by changing the gas pressure. The SR light intensity is adjusted by changing the coefficient.

An X-ray device using the SR light source according to the invention of claim 3 is the same as that of claim 2, wherein the intensity adjusting filter is a container having a window for incidence and emission of SR light. It is provided with a sealed gas and a means for adjusting the pressure of the gas.

An X-ray apparatus using an SR light source according to a fourth aspect of the present invention is the X-ray apparatus according to the third aspect, wherein the intensity adjusting filter has at least means for cooling the SR light incident window.

An X-ray apparatus using the SR light source according to the invention of claim 5 is the same as that of claim 3 or 4,
The intensity adjustment filter is installed so that it can be inserted into or removed from the SR optical path.

According to a sixth aspect of the present invention, there is provided an X-ray apparatus using the SR light source, wherein the means for recording the SR light dying characteristic of the X-ray mirror is the X-ray device according to any one of the first to fifth aspects. Means for measuring the degree of vacuum in the chamber accommodating the line mirror, and means for determining the irradiation SR light intensity from the measured degree of vacuum and the SR light killing characteristic, and controlling the intensity adjustment filter so that this SR light intensity is achieved. It is equipped with.

[0017]

X using the SR light source according to the present invention
The X-ray device is configured to irradiate SR light emitted from an SR light source onto an X-ray mirror arranged in a vacuum atmosphere.
In the X-ray device, since the intensity adjustment filter for adjusting the intensity of the SR light applied to the X-ray mirror is provided, the SR light intensity emitted from the SR light source itself can be changed at startup or after the X-ray mirror is replaced. For example, the withering operation can be performed while adjusting the intensity of SR light irradiated to the X-ray mirror without affecting the normal operation of another X-ray exposure apparatus connected to the SR light source.

The X-ray apparatus using the SR light source according to the invention of claim 2 is the same as that of claim 1, wherein the intensity adjusting filter changes the gas pressure to obtain a linear absorption coefficient of SR light in a gas. Is adjusted to adjust the SR light intensity, so that the SR light intensity can be easily adjusted by adjusting the gas pressure.

According to a third aspect of the present invention, there is provided an X-ray apparatus using an SR light source, wherein a container having a window for incidence and emission of SR light, a gas enclosed in the container, and a means for adjusting the pressure of the gas. Since it is provided, the strength adjusting filter according to claim 2 can be realized.

An X-ray apparatus using the SR light source according to the invention of claim 4 is the same as that of claim 3, wherein the intensity adjusting filter has means for cooling at least the SR light incident window. Can prevent the long wavelength component of the SR light from being absorbed to generate heat, resulting in deterioration of strength or damage.

The X-ray apparatus using the SR light source according to the fifth aspect of the present invention is the X-ray apparatus according to the third aspect, wherein the intensity adjusting filter is installed in or removable from the SR optical path. It is possible to prevent a decrease in SR light intensity due to the intensity adjustment filter during normal operation.

An X-ray device using the SR light source according to the invention of claim 6 is the device according to any one of claims 1 to 5, wherein the means for recording the SR light extinction characteristic of the X-ray mirror,
Means for measuring the degree of vacuum in the chamber accommodating the X-ray mirror, and determining the SR intensity of irradiation from the measured degree of vacuum and the SR light killing characteristic, and controlling the intensity adjustment filter to obtain this SR light intensity. As a result, the intensity adjustment filter is controlled according to the degree of vacuum in the chamber that houses the X-ray mirror based on the SR light extinction characteristic, and the SR light intensity corresponds to the progress of SR light extinction. Can be controlled, and efficient SR light extinction can be realized.

[0023]

[Example] When a replacement X-ray mirror is dead by SR light, the SR light intensity to the beam line to be replaced is 1 mA under the operation of a rated storage current (for example, 200 mA) which is a normal operation state of the SR ring. It suffices if it can cope with a low accumulated current. For this reason, the invention according to claim 2 utilizes the attenuation characteristic of SR light intensity in a gas. First, the principle on which the present invention is based will be described. The attenuation of SR light intensity not only in a gas but in a substance is governed by the following equation. I = I ₀ * exp (−μ * x) (1) where I is the SR light intensity after passing through the substance, I ₀ is the incident SR light intensity of the substance, and μ is the intensity called linear absorption coefficient. Attenuation coefficient, a value determined by the substance type and state. Further, x is the SR light transmission distance in the substance. Here, the linear absorption coefficient μ can be said to be an amount proportional to the number of atoms or molecules constituting the substance within the transmission distance x if the substance type is determined.
That is, if the number of gas molecules in a given volume is changed, the SR light intensity attenuation can be proportionally and continuously controlled even with the same transmission distance. It is clear from the following equation of state of gas that the gas pressure can be changed in order to change the number of gas atoms and molecules in the volume. P * V = n * R * T (2) where P is pressure, V is volume, n is the number of moles of the gas in the volume V, R is a gas constant that does not depend on the type of gas, T Is the absolute temperature. That is, from the equation (2), when the gas volume and the absolute temperature T do not change, the number of gas molecules in the volume changes in inverse proportion to the gas pressure change in the volume and continuously. From the above, by enclosing a specific gas in a container forming a closed space and changing the pressure of the enclosed gas, the SR light intensity in the enclosed gas can be continuously changed. It means that the intensity change can be controlled by controlling the pressure of the enclosed gas. Hereinafter, description will be made in specific examples.

Example 1. An embodiment of the invention described in claims 1 to 3 will be described with reference to FIG. In the figure, 61
6 is a mirror chamber that stores the X-ray mirror 6 in the beam line 2 of FIG. 6, 63 is a mirror holding portion that holds the X-ray mirror 6, and 64 is fixed at two positions on both sides of the mirror holding portion 63. Two holding arm portions 65 are the holding arm portion 64 guided from the inside of the mirror chamber 61 in the ultra-high vacuum atmosphere to the atmosphere through a movable vacuum isolation portion (not shown) composed of a bellows portion, For example, orthogonal 3
Drive mechanism for aligning the SR light of the X-ray mirror 6 held by the mirror holding unit 63 by 6-axis driving of the axis and each orthogonal axis rotation axis, and 66 is an irradiation SR for the X-ray mirror 6. It is an intensity adjustment filter for controlling the light intensity. FIG. 2 is an enlarged cross-sectional view showing in detail the strength adjustment filter 66 in FIG. In the figure,
Reference numeral 71 is an upstream flange that is an SR light incident side flange that constitutes the container of the intensity adjustment filter 66, 72 is an upstream thin film window having an opening for passing the SR light flux to be used, which is made of SiC, Be or the like incorporated in the upstream flange. A downstream flange that is an SR light emitting side flange similar to the upstream flange 71, 74 is a downstream thin film window similar to the upstream thin film window 73, 75 is a sealed gas sealed in the strength adjusting filter 66 container, and 76 is a sealed gas 75. It is a pressure regulator for adjusting the pressure of.

Next, the operation of killing the X-ray mirror 6 after replacement will be mainly described. It is assumed that the X-ray mirror 6 has already been exchanged in the mirror chamber 61, is held by the mirror holding portion 63, and has been restored to the ultra-high vacuum atmosphere. That is, here, the operation from the stage of starting to die by the SR light of the exchange mirror will be described. Other SR lithography systems are in normal operation,
The SR ring is assumed to be operated, for example, at a rated accumulated current value of 200 mA during exposure and transfer. When the SR light extinction of the exchange mirror 6 needs to be started from the SR light intensity corresponding to the accumulated current value of 1 mA, the S light to the X-ray mirror 6 is reduced.
The R light irradiation must reduce the SR light intensity to 1/200. The upstream thin film window 72 and the downstream thin film window 74 in FIG.
For example, in the case of being composed of a SiC thin film having a thickness of 1 μm, the intensity of the SR light component having a wavelength of about 1 nm has already been halved in the two thin film windows 72 and 74. Therefore,
The SR light intensity is 100 at the enclosed gas 75 portion in FIG.
It needs to be reduced to about one-third. If, for example, air is used as the enclosed gas 75, the SR light intensity at a wavelength of about 1 nm at 1 atm of air of 20 mm is about 1/100 of a desired value. Therefore, when air is used as the enclosed gas 75, the length of the strength adjusting filter 66 in the SR optical axis direction may be about 20 mm. From this state, the replacement mirror 6 starts to die by SR light, and the mirror 6 gradually diminishes as it diminishes.
The intensity of SR light irradiating the laser beam will be increased. The control of the SR light intensity applied to the mirror 6 is performed by controlling the pressure of the enclosed gas 75 using the pressure adjuster 76 shown in FIG. The irradiation intensity can be increased by reducing the pressure of the enclosed gas 75, that is, by increasing the degree of vacuum.

In such a structure, after the X-ray mirror 6 is exchanged, the SR light intensity of the SR ring (SR light source) itself is changed to, for example, another X-ray exposure connected to the SR ring. It is possible to carry out the dry-out operation while adjusting the irradiation SR light intensity to the X-ray mirror 6 after the replacement without affecting the normal operation of the device or the like. Further, the SR light intensity can be easily adjusted by adjusting the pressure of the enclosed gas 75.

Example 2. Another embodiment of the invention described in claims 1 to 3 will be described. In the first embodiment, the intensity adjusting filter 66 is located in the front part of the mirror chamber 61, and when a plurality of mirror chamber parts 61 are installed in the beam line 2, the intensity adjusting filter is adjusted for each mirror chamber part 61. The filter 66 will be installed, but the most upstream side of the beam line 2, that is, the most SR
Even if it is installed only on the front surface of the mirror chamber part close to the ring, it is needless to say that the same action and effect are obtained.

Example 3. Still another embodiment of the invention described in claims 1 to 3 will be described. In the first embodiment, when the intensity adjusting filter 66 is attached to the beam line 2,
The beam line 2 and the flanges 71, 73 were installed together, but as shown in FIG.
The intensity adjusting filter container 60 may have an independent structure in the beam line 2. Reference numeral 81 is an arm portion for holding the strength adjusting filter container 60 in the beam line 2.

Example 4. An embodiment of the invention described in claim 4 will be described. The upstream thin film window 72 and the downstream thin film window 74 shown in FIGS. 2 and 3 absorb the long-wavelength component of the SR light and generate heat when the exchange mirror 6 is killed by the SR light. The constituent thin film material may be deteriorated in strength due to the temperature rise and may be damaged. To prevent it, the upper and lower thin film windows 7
2,74 parts may be cooled with, for example, cooling water. Since heat generation due to absorption of long-wavelength components is particularly intense on the upstream side, cooling means may be provided only in the upstream thin film window 72.

Example 5. An embodiment of the invention described in claim 5 will be described. In the third embodiment shown in FIG. 3, even if the replacement mirror 6 is completely exhausted by the SR light, that is, the pressure of the enclosed gas 75 becomes the same ultrahigh vacuum environment as the beam line by the pressure regulator 76. Also, there is attenuation of the SR light intensity due to the upstream thin film window 72 and the downstream thin film window 74, and the exposure SR light intensity is reduced. Therefore, FIG.
As shown in FIG. 5, the intensity adjusting filter container 60 is removed from the SR optical path when the replacement mirror 6 is completely withered by the SR light, for example, the intensity adjusting filter is provided by retracting the intensity adjusting filter container 60 upward. Can be prevented. In the figure, reference numeral 91 designates an SR for adjusting the strength by linearly sliding the arm portion 81.
For retracting upward from the optical path, for example, an air cylinder type drive mechanism, and 92 for linearly sliding the arm 81 in an ultrahigh vacuum by a drive mechanism 91 installed in the atmosphere outside the beam line. For example, a movable vacuum isolation unit formed of a bellows, which is provided at the arm unit introduction unit to the beam line.

In the above embodiment, the case where the intensity adjusting filter 66 is removed from the SR optical path after the withering is completed has been described, but when the X-ray mirror 6 is replaced thereafter and the withering operation becomes necessary again. It is also possible to insert the intensity adjusting filter 66, which has been retracted from the SR optical path, into the SR optical path again. In this way, the intensity adjustment filter 66 can be inserted into or removed from the SR optical path as required.

Example 6. An embodiment of the invention described in claim 6 will be described. The pressure of the enclosed gas 75 in the strength adjusting filter 66 shown in each of the above-mentioned embodiments is changed to the exchange mirror 6.
Regarding the control of the pressure adjuster 76 for attaining a high vacuum degree with the progress of SR light exhaustion, the vacuum degree in the mirror chamber 61 in which the exchange mirror 6 is housed is measured, and for example, as shown in FIG. Although it may be performed by steps S5 to S9, the SR light extinction characteristic of the X-ray mirror 6 is recorded, and the irradiation SR light intensity is obtained from the measured vacuum degree and the SR light extinction characteristic, and the SR light intensity is set to this SR light intensity. The intensity adjustment filter may be controlled in this case. In this case, the intensity adjustment filter is controlled according to the degree of vacuum in the chamber accommodating the X-ray mirror based on the SR light-deadening characteristic.
The SR light intensity can be controlled according to the progress of light death, and efficient SR light death can be realized. FIG. 5 specifically shows this configuration. In the figure, 101 is, for example, a cold cathode type vacuum gauge which is attached to a mirror chamber 61 in which an exchange mirror 6 to be SR light-exhausted is stored and which measures the degree of vacuum in the mirror chamber 61. Reference numeral 102 denotes a pressure setting controller, which records, for example, SR light dying characteristics of the X-ray mirror 6 as shown in FIG. 10, and the mirror chamber 61 measured by the vacuum gauge 101 based on the SR light dying characteristics. The interchangeable mirror 6 from the value of the degree of vacuum inside and the above-mentioned set degree of vacuum
The SR light intensity that can be applied to the light is calculated, the set value of the pressure inside the enclosed gas 75 of the intensity adjustment filter 66 is determined by the expressions (1) and (2), and the control signal is supplied to the pressure adjuster 76. As described above, in the pressure setting controller 102, the relationship between the SR light irradiation amount on the mirror 6, the degree of vacuum in the mirror chamber 61, and the pressure of the gas 75 enclosed in the intensity adjusting filter 66 is tabulated in advance. By doing so, it is possible to eliminate the complexity of calculating each of the expressions (1) and (2).

In each of the above-mentioned embodiments, SR light killing after the X-ray mirror replacement has been mainly described, but SR light killing is also necessary when the apparatus is started up, and can be similarly carried out.

Further, as an X-ray device using an SR light source, X
Although the line exposure apparatus has been taken as an example, for example, a spectroscope is provided to perform material analysis using SR light, and an X-ray mirror is installed to introduce SR light having desired characteristics into the spectroscope. From an existing X-ray analysis apparatus, an X-ray analysis apparatus equipped with an X-ray mirror for converting the SR light irradiating the material into a microbeam for performing two-dimensional analysis of the material, and further, an SR light source. The SR light extracted by the beam line of the book into a plurality of S
Also in other X-ray devices having an X-ray mirror such as an X-ray utilization device configured to be branched by the X-ray mirror in order to cooperate with the R-light utilization device, at the time of starting and replacement of the X-ray mirror. It is necessary to drive the X-ray mirror dry,
The present invention can be applied.

[0035]

As described above, according to the first aspect of the invention, in the X-ray apparatus configured to irradiate the X-ray mirror arranged in the vacuum atmosphere with the SR light emitted from the SR light source. Since the intensity adjustment filter for adjusting the intensity of the SR light applied to the X-ray mirror is provided, the intensity of the SR light emitted from the SR light source itself is changed at the time of start-up or after the X-ray mirror is replaced, for example, SR The withering operation can be performed while adjusting the SR light intensity for irradiation to the X-ray mirror without affecting the normal operation of other X-ray exposure apparatuses connected to the light source.

According to the second aspect of the invention, the intensity adjusting filter of the first aspect changes the linear absorption coefficient of SR light in the gas by changing the gas pressure to generate SR.
Since the light intensity is adjusted, the SR light intensity can be easily adjusted by adjusting the gas pressure.

According to the third aspect of the present invention, a container having a window for incidence and emission of SR light, a gas sealed in the container, and a means for adjusting the pressure of the gas are provided. The intensity adjustment filter described in 2 can be realized.

According to the invention described in claim 4, since the intensity adjusting filter according to claim 3 has at least a means for cooling the SR light incident window, the SR light incident window absorbs the long wavelength component of the SR light. It is possible to prevent the heat from being generated and the strength from being deteriorated or damaged.

According to the invention described in claim 5, the intensity adjusting filter according to claim 3 is installed so as to be insertable into or removable from the SR optical path. It is possible to prevent a decrease in strength.

According to the sixth aspect of the present invention, means for recording the SR light extinction characteristic of the X-ray mirror, means for measuring the degree of vacuum in the chamber housing the X-ray mirror, and the measured degree of vacuum Irradiated SR from the above SR light-deadening characteristics
Since the means for obtaining the light intensity and controlling the intensity adjustment filter so as to obtain this SR light intensity are provided, the intensity adjustment filter is provided according to the degree of vacuum in the chamber accommodating the X-ray mirror based on the SR light killing characteristic. Will be controlled and S
SR light intensity can be controlled in accordance with the progress of R light exhaustion, and efficient SR light exhaustion can be realized.

[Brief description of drawings]

FIG. 1 is a sectional view showing a configuration of a main part of an X-ray exposure apparatus according to a first embodiment.

FIG. 2 is a structural cross-sectional view showing an enlarged detail of the strength adjustment filter of FIG.

FIG. 3 is a sectional view showing a configuration of a main part of an X-ray exposure apparatus according to a third embodiment.

FIG. 4 is a sectional view showing a configuration of a main part of an X-ray exposure apparatus according to a fifth embodiment.

FIG. 5 is a sectional view showing a configuration of a main part of an X-ray exposure apparatus according to a sixth embodiment.

FIG. 6 is a configuration diagram showing an outline of an X-ray exposure apparatus using a conventional SR light source.

FIG. 7 is a cross-sectional view illustrating the principle of transfer in an X-ray exposure apparatus.

FIG. 8 is a characteristic diagram showing a reflection characteristic of an X-ray mirror and an absorption characteristic of a Be thin film window.

FIG. 9 is a flowchart illustrating an X-ray mirror replacement procedure.

FIG. 10 is a characteristic diagram showing the dying characteristic of an X-ray mirror by SR light.

[Explanation of symbols]

 1 Electron Storage Ring (SR Light Source) 2 Beamline 3 Stepper 4 X-ray Mask 5 Wafer 6, 6a, 6b X-ray Mirror 7 Be Thin Film Window 8 Shock Wave Delay Tube 9 High-speed Shut-off Valve 60 Container 61 Mirror Chamber 63 Mirror Holder 64 Hold Arm unit 65 Mirror drive mechanism 66 Strength adjustment filter 71 Upstream flange 72 Upstream thin film window 73 Downstream flange 74 Downstream thin film window 75 Enclosed gas 76 Pressure regulator 85 Arm unit 91 Drive mechanism 92 Movable vacuum isolation unit 101 Vacuum gauge 102 Pressure setting controller

Claims (6)

[Claims] 1. An SR light source that emits SR light, an X-ray mirror that is arranged in a vacuum atmosphere and that reflects SR light from the SR light source in a predetermined direction, and between the SR light source and the X-ray mirror. An X-ray apparatus using an SR light source, comprising an intensity adjustment filter provided to adjust the intensity of SR light emitted from the SR light source to the X-ray mirror. 2. The SR according to claim 1, wherein the intensity adjusting filter is configured to adjust the SR light intensity by changing the linear absorption coefficient of the SR light in the gas by changing the gas pressure. X-ray device using a light source. 3. The intensity adjusting filter is provided with a container having a window for incidence and emission of SR light, a gas enclosed in the container, and a means for adjusting the pressure of the gas. X-ray equipment using the SR light source. 4. The strength adjustment filter is at least SR.
The X-ray apparatus using the SR light source according to claim 3, further comprising means for cooling the light incident window. 5. The X-ray apparatus using the SR light source according to claim 3, wherein the intensity adjustment filter is installed so as to be insertable into or removable from the SR optical path. 6. A means for recording SR light extinction characteristics of an X-ray mirror, a means for measuring the degree of vacuum in a chamber accommodating the X-ray mirror, and the measured degree of vacuum and the SR.
The X-ray apparatus using the SR light source according to any one of claims 1 to 5, further comprising means for obtaining an irradiation SR light intensity from the light-deadening characteristic and controlling an intensity adjustment filter so as to obtain the SR light intensity.