JPH08176177A - Composition for forming platinum film, and platinum film and platinum film pattern formed from this compostion - Google Patents
Composition for forming platinum film, and platinum film and platinum film pattern formed from this compostionInfo
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- JPH08176177A JPH08176177A JP6324875A JP32487594A JPH08176177A JP H08176177 A JPH08176177 A JP H08176177A JP 6324875 A JP6324875 A JP 6324875A JP 32487594 A JP32487594 A JP 32487594A JP H08176177 A JPH08176177 A JP H08176177A
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- composition
- platinum film
- forming
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、Ｐｔ膜形成用組成物、
並びに、この組成物より形成したＰｔ膜及びＰｔ膜パタ
ーンに関する。The present invention relates to a Pt film forming composition,
It also relates to a Pt film and a Pt film pattern formed from this composition.
【０００２】[0002]
【従来の技術】半導体装置のコンタクト及び配線等のＰ
ｔ薄膜の形成方法としては、有機Ｐｔ化合物を含むＰｔ
膜形成用組成物の塗布液を基体上に塗布した後、熱処理
する方法が最も簡便で工業的に有利な方法である。従
来、このＰｔ膜形成用組成物としては、Ｐｔの有機酸塩
又はチオレート化合物を用いたＭＯペースト（Metallo-
Organics）が用いられている。2. Description of the Related Art P for contacts and wirings of semiconductor devices
As a method for forming the t thin film, Pt containing an organic Pt compound is used.
The method of applying a coating solution of the film-forming composition on a substrate and then heat-treating is the most simple and industrially advantageous method. Conventionally, as the Pt film forming composition, MO paste (Metallo-
Organics) are used.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、従来の
Ｐｔ膜形成用組成物は、５００〜８００℃の高温焼成を
必要とすることから、３００℃以下の低温での成膜が要
求されるポリイミド等の樹脂材料上へのＰｔ膜の成膜、
Ｓｉ半導体、ＧａＡｓ，ＩｎＰ，ＧａＮ等の化合物半導
体材料プロセスへの適用が困難であった。However, since the conventional Pt film forming composition requires high temperature baking at 500 to 800 ° C., polyimide or the like required to be formed at a low temperature of 300 ° C. or less. Of Pt film on the resin material of
It has been difficult to apply it to compound semiconductor material processes such as Si semiconductor, GaAs, InP, and GaN.
【０００４】このため、従来は真空蒸着法、スパッター
法等によりＰｔ膜を形成後、ＥＣＲプラズマ等のドライ
エッチングを行うという煩雑な作業により、Ｐｔの回路
パターンが形成されている。Therefore, conventionally, a Pt circuit pattern is formed by a complicated work of forming a Pt film by a vacuum vapor deposition method, a sputtering method or the like and then performing dry etching such as ECR plasma.
【０００５】Ｐｔ回路パターンを形成するに際して、有
機Ｐｔ化合物を含むＰｔ膜形成用組成物の塗布液を基体
上にスピンコート、スプレーコート、ディップコート、
スクリーン印刷等により塗布後、比較的低温で熱処理す
ることにより平滑で低抵抗なＰｔ膜を作製することがで
きるならば、Ｐｔ膜の成膜工程は著しく簡略化される。At the time of forming a Pt circuit pattern, a coating liquid of a Pt film forming composition containing an organic Pt compound is spin-coated, spray-coated, dip-coated, on a substrate.
If a smooth and low-resistance Pt film can be produced by applying heat treatment at a relatively low temperature after coating by screen printing or the like, the Pt film formation process is significantly simplified.
【０００６】また、この組成物が、光、レーザー、電子
線、Ｘ線等の放射線照射により容易に分解してＰｔを析
出させることが可能であれば、これら放射線により露光
した後に、露光されてない部分を溶剤で洗浄除去し、そ
の後熱処理することにより、基板上にＰｔ膜のパターン
を容易に形成することが可能となる。即ち、この場合に
は、レーザーのスキャニングによる直接描写やマスクパ
ターンの転写により、エッチングの難しいＰｔ膜の回路
パターンを直接基板上に形成することが可能となり、作
業工程を大幅に短縮することができる。Further, if this composition can be easily decomposed by irradiation with radiation such as light, laser, electron beam, X-ray and the like to precipitate Pt, it is exposed to these radiations and then exposed. It is possible to easily form the pattern of the Pt film on the substrate by cleaning and removing the non-existing portion with a solvent and then performing heat treatment. That is, in this case, the circuit pattern of the Pt film, which is difficult to etch, can be directly formed on the substrate by direct drawing by laser scanning or transfer of the mask pattern, and the working process can be significantly shortened. .
【０００７】本発明は上記従来の実情に鑑みてなされた
ものであって、保存熱安定性、塗布性に優れ、比較的低
温の熱処理により低抵抗かつ平滑なＰｔ膜を容易に形成
することができ、また、放射線照射による露光後、現像
して熱処理することにより、基板上にＰｔ膜のパターン
を容易に形成することが可能なＰｔ膜形成用組成物、並
びに、この組成物より形成したＰｔ膜及びＰｔ膜パター
ンを提供することを目的とする。The present invention has been made in view of the above conventional circumstances, and is excellent in storage heat stability and coating properties, and a Pt film having a low resistance and smoothness can be easily formed by heat treatment at a relatively low temperature. A composition for forming a Pt film capable of easily forming a pattern of a Pt film on a substrate by exposing to radiation, developing, and then heat-treating, and Pt formed from this composition. Aims to provide films and Pt film patterns.
【０００８】[0008]
【課題を解決するための手段】請求項１のＰｔ膜形成用
組成物は、下記の構造式（１）で表されるジメチルＰｔ
（II）（Ｎ，Ｎ，Ｎ′，Ｎ′−テトラメチルエチレンジ
アミン）錯体と有機溶剤とを含むことを特徴とする。A composition for forming a Pt film according to claim 1 is dimethyl Pt represented by the following structural formula (1).
(II) (N, N, N ', N'-tetramethylethylenediamine) complex and an organic solvent.
【０００９】[0009]
【化２】 Embedded image
【００１０】請求項２のＰｔ膜形成用組成物は、請求項
１に記載の組成物において、更に、Ｓｉ，Ｂ，Ｐ，Ｂ
ｉ，Ｔｉ，Ｚｒ，Ｖ，Ｎｂ，Ｔａ，Ｇｅ及びＰｂよりな
る群から選ばれる１種又は２種以上の金属のアルコキシ
ド或いは該金属の有機酸塩を含有することを特徴とす
る。A composition for forming a Pt film according to a second aspect is the composition according to the first aspect, further comprising Si, B, P and B.
It is characterized by containing an alkoxide of one or more metal selected from the group consisting of i, Ti, Zr, V, Nb, Ta, Ge and Pb or an organic acid salt of the metal.
【００１１】請求項３のＰｔ膜は、請求項１又は２に記
載の組成物を基体上に塗布後、熱処理することにより基
板上に形成してなることを特徴とする。A Pt film according to a third aspect is characterized in that it is formed on a substrate by applying the composition according to the first or second aspect onto a substrate and then heat treating the composition.
【００１２】請求項４のＰｔ膜パターンは、請求項１又
は２に記載の組成物を基体上に塗布後、放射線によりパ
ターン露光した後、露光されてない部分を溶剤で洗浄除
去し、次いで、熱処理することにより基板上に形成して
なることを特徴とする。The Pt film pattern according to claim 4 is obtained by applying the composition according to claim 1 or 2 onto a substrate, pattern-exposing it with radiation, and then washing and removing the unexposed portion with a solvent. It is characterized in that it is formed on a substrate by heat treatment.
【００１３】以下に本発明を詳細に説明する。The present invention will be described in detail below.
【００１４】本発明のＰｔ膜形成用組成物においては、
有機Ｐｔ化合物として、ジメチルＰｔ（II）（Ｎ，Ｎ，
Ｎ′，Ｎ′−テトラメチルエチレンジアミン）錯体（以
下「ＤＭＰｔ（II）ＴＭＥＤＡ」と略記する。）を用い
る。In the Pt film forming composition of the present invention,
As an organic Pt compound, dimethyl Pt (II) (N, N,
N ′, N′-tetramethylethylenediamine) complex (hereinafter abbreviated as “DMPt (II) TMEDA”) is used.
【００１５】このようなＤＭＰｔ（II）ＴＭＥＤＡは、
Ｈ．Ｃ．ＣＬＡＲＫ，Ｌ．Ｅ．ＭＡＮＺＥＲ（J.Ｏrgan
ometallic Ｃhemistry,59(1973)411-428.)の方法により
合成することができる。Such DMPt (II) TMEDA is
H. C. CLARK, L .; E. FIG. MANZER (J. Organ
ometallic Chemistry, 59 (1973) 411-428.).
【００１６】本発明のＰｔ膜形成用組成物は、このよう
なＤＭＰｔ（II）ＴＭＥＤＡを、酢酸エチル、酢酸イソ
プロピル、酢酸ブチル等の酢酸エステル類、イソプロパ
ノール（ＩＰＡ）、ブタノール、エタノールアミン等の
アルコール類、エチレングリコール、ジオキサン等のエ
ーテル類、Ｎ，Ｎ，Ｎ′，Ｎ′−テトラメチルエチレン
ジアミン（ＴＭＥＤＡ）等のアミン類、その他、トルエ
ン等の有機溶剤に、Ｐｔ金属換算で０．１〜２０重量％
程度の濃度に溶解することにより、容易に調製すること
ができる。The Pt film-forming composition of the present invention is prepared by using such DMPt (II) TMEDA as an acetic acid ester such as ethyl acetate, isopropyl acetate and butyl acetate, and alcohol such as isopropanol (IPA), butanol and ethanolamine. 0.1 to 20 in terms of Pt metal in ethers such as ethylene glycol and dioxane, amines such as N, N, N ′, N′-tetramethylethylenediamine (TMEDA) and other organic solvents such as toluene. weight%
It can be easily prepared by dissolving it at a certain concentration.
【００１７】本発明のＰｔ膜は、このような本発明のＰ
ｔ膜形成用組成物を、Ｓｉ，アルミナ、石英、ＡｌＮ、
ＬｉＮｂＯ3 ，ＧａＡｓ，ＩｎＰ，ＧａＮ，ポリイミド
等の基板上に、スピンコート、スプレーコート、ディッ
プコート、スクリーン印刷等の手法で塗布した後、１５
０〜５００℃、好ましくは２００〜５００℃で１０〜６
０分程度熱処理することにより容易に形成することがで
きる。The Pt film of the present invention is the P of the present invention.
The composition for forming a t film is formed of Si, alumina, quartz, AlN,
After applying it on a substrate such as LiNbO 3 , GaAs, InP, GaN, or polyimide by a method such as spin coating, spray coating, dip coating, or screen printing, 15
0 to 500 ° C, preferably 10 to 6 at 200 to 500 ° C
It can be easily formed by heat treatment for about 0 minutes.
【００１８】また、本発明のＰｔ膜パターンは、本発明
のＰｔ膜形成用組成物を上記と同様にして基板上に塗布
した後、得られた塗膜に対して光、レーザー、電子線、
Ｘ線等の放射線を所定のパターンに照射して露光し、露
光されていない塗膜部分を溶剤で洗浄除去して現像し、
次いで、上記Ｐｔ膜の形成における熱処理と同様の条件
で熱処理することにより容易に形成することができる。The Pt film pattern of the present invention is obtained by applying the Pt film forming composition of the present invention onto a substrate in the same manner as described above, and then applying light, laser, electron beam,
It is exposed to radiation such as X-rays in a predetermined pattern, and the unexposed coating film portion is washed away with a solvent and developed,
Then, the Pt film can be easily formed by performing a heat treatment under the same conditions as the heat treatment for forming the Pt film.
【００１９】なお、Ｐｔ膜パターンの形成に当り、パタ
ーン露光はマスクパターンを用いる露光であっても、レ
ーザー光等を、パターンに沿って走査することによる露
光であっても良い。In forming the Pt film pattern, the pattern exposure may be exposure using a mask pattern or exposure by scanning a laser beam or the like along the pattern.
【００２０】また、露光後の現像には、０．１〜２０重
量％の塩酸、硝酸、硫酸等を含む、ＩＰＡ、オキソブタ
ン酸エチル等の溶液を溶剤として用いることができる。For the development after the exposure, a solution containing 0.1 to 20% by weight of hydrochloric acid, nitric acid, sulfuric acid or the like, such as IPA or ethyl oxobutanoate, can be used as a solvent.
【００２１】なお、本発明のＰｔ膜形成用組成物は、更
にＳｉ，Ｂ，Ｐ，Ｂｉ，Ｔｉ，Ｚｒ，Ｖ，Ｎｂ，Ｔａ，
Ｇｅ及びＰｂ等よりなる群から選ばれる１種又は２種以
上の金属のアルコキシド（メトキシド、エトキシド、イ
ソプロポキシド、ブトキシド等）或いは該金属の有機酸
塩（オクチル酸塩、２−エチル酢酸塩）、アセチルアセ
トン塩等の金属キレート化合物等を含有していても良
く、これらの金属化合物を含有させることにより、形成
されるＰｔ膜又はＰｔ膜パターンの基板への密着性及び
機械的強度の向上を図ることができる。ただし、これら
の金属化合物を含有させた場合、Ｐｔ膜又はＰｔ膜パタ
ーンの形成における熱処理温度は５００℃以上、特に５
００〜７００℃とする必要がある。The composition for forming a Pt film of the present invention further comprises Si, B, P, Bi, Ti, Zr, V, Nb, Ta,
Alkoxides (methoxide, ethoxide, isopropoxide, butoxide, etc.) of one or more metals selected from the group consisting of Ge, Pb, etc., or organic acid salts (octylates, 2-ethylacetates) of the metals. , A metal chelate compound such as acetylacetone salt, etc. may be contained. By containing these metal compounds, the adhesion of the formed Pt film or Pt film pattern to the substrate and the mechanical strength are improved. be able to. However, when these metal compounds are contained, the heat treatment temperature in forming the Pt film or the Pt film pattern is 500 ° C. or higher, especially 5
It is necessary to set the temperature to 00 to 700 ° C.
【００２２】Ｐｔ膜形成用組成物に含有させる上記金属
化合物としては、具体的にはＴＥＯＳ（エチルシリケー
ト），ＴＥＯＳ加水分解物，Ｂ（ＯＣ2 Ｈ5 ）3 ，ＰＯ
（ＯＣ2 Ｈ5 ）3 ，オクチル酸Ｂｉ，Ｔｉ（Ｏ−ｉ−Ｃ
3 Ｈ7 ）4 ，Ｚｒ（ＯＣ4 Ｈ9 ）4 ，ＶＯ（Ｏ−ｉ−Ｃ
3 Ｈ7 ）3 ，Ｎｂ（ＯＣ2 Ｈ5 ）5 ，Ｔａ（ＯＣ2 Ｈ
5 ）5 ，Ｇｅ（ＯＣ2 Ｈ5 ）4 ，オクチル酸Ｐｂ等を用
いることができ、その含有量は当該金属化合物の金属の
酸化物換算で０．１〜５．０重量％とするのが好まし
い。Specific examples of the metal compound contained in the Pt film forming composition include TEOS (ethyl silicate), TEOS hydrolyzate, B (OC 2 H 5 ) 3 and PO.
(OC 2 H 5 ) 3 , octyl acid Bi, Ti (OiC)
3 H 7 ) 4 , Zr (OC 4 H 9 ) 4 , VO (O-i-C
3 H 7 ) 3 , Nb (OC 2 H 5 ) 5 , Ta (OC 2 H
5 ) 5 , Ge (OC 2 H 5 ) 4 , octylic acid Pb, etc. can be used, and the content thereof is 0.1 to 5.0% by weight in terms of metal oxide of the metal compound. preferable.
【００２３】[0023]
【作用】前記構造式（１）で表されるＤＭＰｔ（II）Ｔ
ＭＥＤＡは、Ｐｔ膜形成用の塗布材料として用いた場
合、保存熱安定性、塗布性に優れ、しかも、従来用いら
れているＰｔの有機酸塩等に比べて活性が高く、分解さ
れ易いため、１５０〜５００℃という比較的低温の熱処
理により、低抵抗かつ平滑なＰｔ膜を形成することがで
きる。Function: DMPt (II) T represented by the above structural formula (1)
When MEDA is used as a coating material for forming a Pt film, it has excellent storage heat stability and coating properties, and is more active and easily decomposed than the conventionally used Pt organic acid salts and the like. By a heat treatment at a relatively low temperature of 150 to 500 ° C., a Pt film having low resistance and smoothness can be formed.
【００２４】また、このＤＭＰｔ（II）ＴＭＥＤＡは、
光、レーザー、電子線、Ｘ線等の放射線照射により容易
にＰｔ−Ｃ結合が解離してＰｔを析出させることが可能
なため、これら放射線により露光した後に、露光されて
ない部分を溶剤で洗浄除去し、その後熱処理することに
より、基板上にＰｔ膜のパターンを容易に形成すること
ができる。This DMPt (II) TMEDA is
Since the Pt-C bond can be easily dissociated and Pt can be precipitated by irradiation with radiation such as light, laser, electron beam, and X-ray, after the exposure to these radiations, the unexposed portion is washed with a solvent. By removing and then heat treating, the pattern of the Pt film can be easily formed on the substrate.
【００２５】通常の場合、本発明のＰｔ膜形成用組成物
により形成される、Ｐｔ膜又はＰｔ膜パターンのシート
抵抗は６．０Ω／ｃｍ2 以下と非常に低抵抗である。Usually, the sheet resistance of the Pt film or the Pt film pattern formed by the Pt film forming composition of the present invention is a very low resistance of 6.0 Ω / cm 2 or less.
【００２６】請求項２のＰｔ膜形成用組成物によれば、
基板上に形成するＰｔ膜又はＰｔ膜パターンの密着性及
び機械的強度を向上させることができる。According to the Pt film forming composition of claim 2,
The adhesion and mechanical strength of the Pt film or Pt film pattern formed on the substrate can be improved.
【００２７】[0027]
【実施例】以下に実施例を挙げて本発明をより具体的に
説明するが、本発明はその要旨を超えない限り、以下の
実施例に限定されるものではない。The present invention will be described in more detail with reference to the following examples, but the present invention is not limited to the following examples as long as the gist thereof is not exceeded.
【００２８】実施例１ＤＭＰｔ（II）ＴＭＥＤＡの合成 Ｈ．Ｃ．ＣＬＡＲＫ，Ｌ．Ｅ．ＭＡＮＺＥＲ（J.Ｏrgan
ometallic Ｃhemistry,59(1973)411-428.)の方法により
ＤＭＰｔ（II）ＴＭＥＤＡを合成した。まず、下記構造
式（２）で表されるジメチルＰｔ（II）シクロオクタジ
エン錯体を合成した後、ＴＭＥＤＡに溶解し、加熱反応
させた。反応後、過剰なＴＭＥＤＡ及びシクロオクタジ
エンを減圧下蒸留により除去してＤＭＰｔ（II）ＴＭＥ
ＤＡを得た。Example 1 Synthesis of DMPt (II) TMEDA C. CLARK, L .; E. FIG. MANZER (J. Organ
DMPt (II) TMEDA was synthesized by the method of ometallic Chemistry, 59 (1973) 411-428.). First, a dimethyl Pt (II) cyclooctadiene complex represented by the following structural formula (2) was synthesized, dissolved in TMEDA, and heated and reacted. After the reaction, excess TMEDA and cyclooctadiene were removed by distillation under reduced pressure to remove DMPt (II) TME.
I got DA.
【００２９】[0029]
【化３】 Embedded image
【００３０】Ｐｔ膜形成用組成物の調整 得られたＤＭＰｔ（II）ＴＭＥＤＡを、表１に示す溶媒
にＰｔ濃度１０重量％の割合で溶解してＰｔ膜形成用組
成物を調製した。Preparation of Pt Film Forming Composition The obtained DMPt (II) TMEDA was dissolved in the solvent shown in Table 1 at a Pt concentration of 10% by weight to prepare a Pt film forming composition.
【００３１】Ｐｔ膜の形成 得られたＰｔ膜形成用組成物をＳｉ（１１０）基板上に
スピンコートした後、表１に示す温度で３０分焼成し
た。 Formation of Pt Film The obtained Pt film forming composition was spin-coated on a Si (110) substrate and then baked at a temperature shown in Table 1 for 30 minutes.
【００３２】その結果、いずれの場合も平滑なＰｔ膜を
形成することができた。得られた膜のシート抵抗を測定
したところ、表１に示す通り、低抵抗であることが確認
された。As a result, a smooth Pt film could be formed in any case. When the sheet resistance of the obtained film was measured, as shown in Table 1, it was confirmed that the film had a low resistance.
【００３３】また、Ｐｔ膜の粘着テープによる剥離テス
トにより密着性を、エンピツ硬度試験により機械的強度
を調べ、その結果を表１に併記した。なお、密着性は、
可＜良＜優の順で良い結果を示す。Further, the adhesion was examined by a peeling test of the Pt film using an adhesive tape, and the mechanical strength was examined by an pencil hardness test. The results are also shown in Table 1. The adhesion is
Good results are shown in the order of good <good <excellent.
【００３４】[0034]
【表１】 [Table 1]
【００３５】実施例２ 実施例１のNo. １〜８において、Ｐｔ膜形成用組成物を
基板に塗布した後、塗膜にマスクパターンを通したＸｅ
Ｃｌ（３０８ｎｍ）を照射してＰｔを析出させた後、露
光していない部分を１０重量％塩酸ＩＰＡ溶液で除去
後、熱処理したこと以外は各々同様に行ったところ、良
好なＰｔ膜パターンを形成することができた。Example 2 In Nos. 1 to 8 of Example 1, the composition for forming a Pt film was applied to a substrate, and then Xe was formed by passing a mask pattern through the coating film.
After irradiating with Cl (308 nm) to precipitate Pt, the non-exposed portion was removed with a 10 wt% hydrochloric acid IPA solution, and then heat treatment was performed in the same manner as above, but a good Pt film pattern was formed. We were able to.
【００３６】実施例３ 実施例２において、マスクパターンを通したＸｅＣｌ光
による露光の代りに、Ａｒイオンレーザー光（１〜９×
１０5 Ｗ／ｃｍ2 ）をスキャニングして露光したこと以
外は同様に行ったところ、良好なＰｔ膜パターンを形成
することができた。Example 3 Instead of the exposure with XeCl light passing through the mask pattern in Example 2, Ar ion laser light (1 to 9 ×) was used.
A similar Pt film pattern could be formed in the same manner except that the exposure was performed by scanning 10 5 W / cm 2 ).
【００３７】実施例４ ＤＭＰｔ（II）ＴＭＥＤＡをＰｔ濃度１０重量％となる
ように表２に示す溶媒に溶解すると共に、表２に示す金
属化合物を表２に示す金属酸化物濃度となるように添加
してＰｔ膜形成用組成物を調製した。Example 4 DMPt (II) TMEDA was dissolved in the solvents shown in Table 2 so that the Pt concentration was 10% by weight, and the metal compounds shown in Table 2 were made to have the metal oxide concentrations shown in Table 2. A composition for forming a Pt film was prepared by adding.
【００３８】このＰｔ膜形成用組成物を表２に示す基板
にスピンコートとした後、表２に示す濃度で熱処理し
た。This composition for forming a Pt film was spin-coated on the substrate shown in Table 2 and then heat-treated at the concentration shown in Table 2.
【００３９】その結果、いずれの場合も平滑なＰｔ膜を
形成することができた。得られた膜のシート抵抗を測定
したところ、表２に示す通り、低抵抗であることが確認
された。As a result, a smooth Pt film could be formed in any case. The sheet resistance of the obtained film was measured, and as shown in Table 2, it was confirmed that the film had a low resistance.
【００４０】また、Ｐｔ膜の粘着テープによる剥離テス
トにより密着性を、エンピツ硬度試験により機械的強度
を調べ、その結果を表２に併記した。Further, the adhesion was examined by a peeling test of the Pt film using an adhesive tape, and the mechanical strength was examined by a pencil hardness test. The results are also shown in Table 2.
【００４１】表２より、Ｓｉ，Ｂｉ，Ｔｉ，Ｖ，Ｂ等の
金属化合物を用いることにより、Ｐｔ膜の密着性及び機
械的強度を高めることができることがわかる。From Table 2, it can be seen that the adhesion and mechanical strength of the Pt film can be enhanced by using a metal compound such as Si, Bi, Ti, V and B.
【００４２】[0042]
【表２】 [Table 2]
【００４３】実施例５ 実施例２のNo. ９〜１９において、Ｐｔ膜形成用組成物
を基板に塗布した後、塗膜にマスクパターンを通したＸ
ｅＣｌ（３０８ｎｍ）を照射してＰｔを析出させた後、
露光していない部分を１０重量％塩酸ＩＰＡ溶液で除去
後、熱処理したこと以外は各々同様に行ったところ、良
好なＰｔ膜パターンを形成することができた。Example 5 In Nos. 9 to 19 of Example 2, the composition for forming a Pt film was applied to a substrate, and then X was formed by passing a mask pattern through the coating film.
After irradiating with eCl (308 nm) to precipitate Pt,
When the non-exposed portion was removed with a 10 wt% hydrochloric acid IPA solution and then heat treatment was performed in the same manner, a good Pt film pattern could be formed.
【００４４】実施例６ 実施例５において、マスクパターンを通したＸｅＣｌ光
による露光の代りに、Ａｒイオンレーザー光（１〜９×
１０5 Ｗ／ｃｍ2 ）をスキャニングして露光したこと以
外は同様に行ったところ、良好なＰｔ膜パターンを形成
することができた。Example 6 Instead of the exposure by XeCl light passing through the mask pattern in Example 5, Ar ion laser light (1 to 9 ×) was used.
A similar Pt film pattern could be formed in the same manner except that the exposure was performed by scanning 10 5 W / cm 2 ).
【００４５】[0045]
【発明の効果】以上詳述した通り、本発明のＰｔ膜形成
用組成物は、保存熱安定性、塗布性に優れる上に、比較
的易分解性であるため、比較的低温の熱処理により低抵
抗かつ平滑なＰｔ膜を容易に形成することができる。ま
た、放射線照射により容易にＰｔを析出させるため、放
射線照射による露光後、現像して熱処理することによ
り、基板上にＰｔ膜のパターンを容易に形成することが
できる。As described above in detail, the Pt film forming composition of the present invention is excellent in storage heat stability and coating properties and is relatively easily decomposed. A Pt film having resistance and smoothness can be easily formed. In addition, since Pt is easily deposited by irradiation with radiation, the pattern of the Pt film can be easily formed on the substrate by developing, followed by heat treatment after exposure by irradiation with radiation.
【００４６】このような本発明のＰｔ膜形成用組成物に
より形成されるＰｔ膜は、表面平滑で低抵抗であること
から、各種電極材料として極めて有用である。特に、本
発明のＰｔ膜パターンによれば、所望の回路パターンを
精度良く、容易かつ効率的に形成することができ、工業
的に極めて有利である。The Pt film formed from such a Pt film forming composition of the present invention is extremely useful as various electrode materials because of its smooth surface and low resistance. Particularly, according to the Pt film pattern of the present invention, a desired circuit pattern can be formed accurately, easily and efficiently, which is extremely advantageous industrially.
Claims (4)
Ｐｔ（II）（Ｎ，Ｎ，Ｎ′，Ｎ′−テトラメチルエチレ
ンジアミン）錯体と有機溶剤とを含むことを特徴とする
Ｐｔ膜形成用組成物。 【化１】 1. A Pt film comprising a dimethyl Pt (II) (N, N, N ′, N′-tetramethylethylenediamine) complex represented by the following structural formula (1) and an organic solvent. Forming composition. Embedded image
に、Ｓｉ，Ｂ，Ｐ，Ｂｉ，Ｔｉ，Ｚｒ，Ｖ，Ｎｂ，Ｔ
ａ，Ｇｅ及びＰｂよりなる群から選ばれる１種又は２種
以上の金属のアルコキシド或いは該金属の有機酸塩を含
有することを特徴とするＰｔ膜形成用組成物。2. The composition according to claim 1, further comprising Si, B, P, Bi, Ti, Zr, V, Nb and T.
A Pt film forming composition comprising an alkoxide of one or more metals selected from the group consisting of a, Ge and Pb or an organic acid salt of the metal.
に塗布後、熱処理することにより基板上に形成してなる
Ｐｔ膜。3. A Pt film formed on a substrate by applying the composition according to claim 1 or 2 on a substrate and then heat-treating it.
に塗布後、放射線によりパターン露光した後、露光され
てない部分を溶剤で洗浄除去し、次いで、熱処理するこ
とにより基板上に形成してなるＰｔ膜パターン。4. The composition according to claim 1 or 2 is applied on a substrate, and after pattern exposure by radiation, the unexposed portion is washed away with a solvent, and then heat treated to form a substrate. The formed Pt film pattern.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6324875A JPH08176177A (en) | 1994-12-27 | 1994-12-27 | Composition for forming platinum film, and platinum film and platinum film pattern formed from this compostion |
| US08/579,413 US5696384A (en) | 1994-12-27 | 1995-12-27 | Composition for formation of electrode pattern |
| KR1019950059592A KR100277569B1 (en) | 1994-12-27 | 1995-12-27 | Composition for forming electrode pattern and method of forming electrode pattern |
| KR1020000027961A KR100294583B1 (en) | 1994-12-27 | 2000-05-24 | Composition for formation of electrode pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6324875A JPH08176177A (en) | 1994-12-27 | 1994-12-27 | Composition for forming platinum film, and platinum film and platinum film pattern formed from this compostion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08176177A true JPH08176177A (en) | 1996-07-09 |
Family
ID=18170616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6324875A Withdrawn JPH08176177A (en) | 1994-12-27 | 1994-12-27 | Composition for forming platinum film, and platinum film and platinum film pattern formed from this compostion |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08176177A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0989205A1 (en) * | 1997-04-30 | 2000-03-29 | Takamatsu Research Laboratory | Metal paste and method for production of metal film |
| JP2002524872A (en) * | 1998-09-03 | 2002-08-06 | マイクロン テクノロジー，インコーポレイティド | Diffusion barrier layer and method of manufacturing the same |
| US6586155B2 (en) | 2000-02-08 | 2003-07-01 | Canon Kabushiki Kaisha | Composition for forming electroconductive film |
| JP2006245557A (en) * | 2005-02-03 | 2006-09-14 | Semiconductor Energy Lab Co Ltd | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
| US7115432B2 (en) | 2002-08-05 | 2006-10-03 | Canon Kabushiki Kaisha | Base pattern forming material for electrode and wiring material absorption, electrode and wiring forming method, and method of manufacturing image forming apparatus |
-
1994
- 1994-12-27 JP JP6324875A patent/JPH08176177A/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0989205A1 (en) * | 1997-04-30 | 2000-03-29 | Takamatsu Research Laboratory | Metal paste and method for production of metal film |
| EP0989205A4 (en) * | 1997-04-30 | 2003-05-28 | Takamatsu Res Lab | Metal paste and method for production of metal film |
| JP2002524872A (en) * | 1998-09-03 | 2002-08-06 | マイクロン テクノロジー，インコーポレイティド | Diffusion barrier layer and method of manufacturing the same |
| US6586155B2 (en) | 2000-02-08 | 2003-07-01 | Canon Kabushiki Kaisha | Composition for forming electroconductive film |
| US7115432B2 (en) | 2002-08-05 | 2006-10-03 | Canon Kabushiki Kaisha | Base pattern forming material for electrode and wiring material absorption, electrode and wiring forming method, and method of manufacturing image forming apparatus |
| JP2006245557A (en) * | 2005-02-03 | 2006-09-14 | Semiconductor Energy Lab Co Ltd | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
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