JPH08162585A - Lead frame processing method, lead frame and semiconductor device - Google Patents

Abstract

PURPOSE: To realize good junction property with terminals of a semiconductor chip through multipin and narrow pitch structure by forming adjacent leads, processing the remaining leads and isolating each inner lead with irradiation of laser beam in a lead frame processing method under the specific condition. CONSTITUTION: There is provided a method for processing a multipin and narrow pitch lead frame comprising many inner leads 202 joined with each terminal of a semiconductor chip at the end part of internal side and outer leads 203 extending continuously at the external side of such inner leads, whereby the plate is 0.3mm thick or less, the minimum lead pitch is twice the plate thickness or less and the minimum width of lead clearance is less than the plate thickness. First, an outer lead 203 is formed on the metal plate, a part which will becomes the inner lead 202 is processed and the metal plate is then washed and dried up. Moreover, a coupling portion is provided for coupling the leads at the internal side of the inner lead 202. Next, the adjacent leads are cut with a laser beam to individually isolate the inner leads 202.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of processing a lead frame used for a small and high performance semiconductor device (LSI), and more particularly to an inner lead having a multi-pin and narrow pitch fine processing pattern. The present invention relates to a lead frame processing method suitable for processing, a lead frame processed by the lead frame processing method, and a semiconductor device using the lead frame.

[0002]

2. Description of the Related Art In recent years, there has been a stricter demand for higher-density mounting and higher integration of semiconductor chips, and in order to meet this demand, lead frames mounting semiconductor chips have a narrower pitch and a larger number of pins. Is required. In order to obtain such a lead frame, fine and highly accurate processing is performed, for example, on a metal plate having a plate thickness of 0.3 mm or less, the minimum lead pitch, that is, the pitch at the inner tip of the inner lead is the plate thickness. It is required to perform processing so that the minimum value of the width of the lead gap becomes equal to or less than the plate thickness when the width is less than twice the above, and the processing for that is becoming very difficult.

When the inner tip portion of the inner lead and each terminal of the semiconductor chip are joined by wire bonding or bumps, a certain width (width) is required on the inner lead side. In a lead frame having a large number of pins and a narrow pitch, the width of the tips of the inner leads is narrowed, which makes the joining difficult. Moreover, in the case of wire bonding, if the pitch of the terminal joints in the inner leads is too narrow, adjacent wires may come into contact with each other, or the tip of a joining jig called a capillary may be adjacent wires or adjacent terminal joints. Interferes with good bonding.

On the other hand, in the prior art disclosed in Japanese Patent Laid-Open No. 4-269856 (hereinafter referred to as the first prior art), the length of the inner lead is changed between the adjacent leads, and One end portion, that is, each terminal joint portion of the semiconductor chip is formed by shifting in the longitudinal direction of the lead (hereinafter, such an arrangement is referred to as a zigzag arrangement).

Further, in the prior art disclosed in Japanese Patent Application Laid-Open No. 2-247089 (hereinafter referred to as the second prior art), the inner width of the inner lead is widened so that the bonding wires can be arranged at a high density. ing.

On the other hand, when a thin metal plate is cut into a fine pattern with a large number of pins and a narrow pitch, the rigidity of the metal plate material is remarkably reduced, and the possibility of deformation due to a small external force increases. The lead is deformed during processing of the lead frame and the accuracy of the lead pitch and lead width is reduced, and even if the processing is finished with high accuracy, high precision dimensions and The shape cannot be maintained.

On the other hand, the prior art disclosed in Japanese Patent Laid-Open No. 58-123747 (hereinafter referred to as the third prior art).
Then, the rigidity is secured by connecting the inner tip part of the inner lead with the connecting part, and after firmly fixing it to the fixed position of the fixing member (base) such as ceramic material, the connecting part is irradiated with the laser beam. Cutting (hereinafter referred to as laser cutting).

[0008]

By using the staggered arrangement in the first prior art, it is possible to easily and surely perform bonding by wire bonding or the like even with a lead frame having a large number of pins and a narrow pitch. In addition, as in the second conventional technique, if the width of the terminal joint portion at the tip of the lead frame joined to the semiconductor chip is secured, the jointability can be improved. Further, if the inner tip portion of the inner lead is connected by the connecting portion as in the third prior art, the rigidity of that portion is reduced, and therefore the deformation of the lead is avoided. In other words, the increased number of pins and narrower pitches, which were restricted to secure the width of the terminal joints to be joined to the semiconductor chips, can be realized by staggered arrangement beyond the conventional limit, and the connection The introduction of the parts makes it possible to maintain the highly accurate size and shape.

In the above case, it is advantageous to provide the connecting portions as close to each other as possible in order to improve the rigidity. However, when laser-cutting the connecting portions between the terminal connecting portions of the inner leads of the inner leads arranged in a staggered manner. In addition, the heat effect due to heat input by laser light irradiation extends to the terminal joint where a healthy surface should be formed, and an oxide film is formed at the terminal joint, and thermal stress or thermal strain causes metal plate in that portion. It remains in the material, and a good terminal joint cannot be obtained. This is a problem that occurs because the lead frame to be cut has multiple pins and a fine cutting pattern with a narrow pitch.
If a good terminal joint portion cannot be obtained, the jointability with the semiconductor chip will deteriorate.

An object of the present invention is to provide a large number of pins and a narrow pitch,
Moreover, it is an object of the present invention to provide a method for processing a lead frame having good bonding properties with terminals of a semiconductor chip, a lead frame processed by the method for processing the lead frame, and a semiconductor device using the lead frame.

[0011]

In order to achieve the above-mentioned object, according to the present invention, a large number of inner leads joined to respective terminals of a semiconductor chip at the inner tip portion thereof and continuously outside the inner leads. Formed from a thin metal plate, the outer lead has an extending outer lead, the thickness is 0.3 mm or less, the minimum lead pitch is less than twice the thickness, and the minimum width of the lead gap is less than the thickness. In the method for processing a lead frame, the first group of terminal joints are formed at the inner tip portions of the plurality of inner leads, and the second group of terminals are located outside the first group of terminal joints in the lead longitudinal direction. Forming a terminal joint including a terminal joint of the group, and leaving a connecting portion at a position close to a rear end portion of the terminal joint of the second group to form adjacent leads. Step, after the first step, a second step of performing other processing left in the lead frame processing, and after the second step, the connecting portion left uncut in the first step is laser-processed. And a third step of individually separating each inner lead by cutting with light irradiation.

Further, in order to achieve the above object, according to the present invention, in the method for processing a lead frame as described above, the inner tip portions of the plurality of inner leads are provided with a first
A terminal joining portion including a terminal joining portion of the group and a terminal joining portion of the second group, which is located outside the terminal joining portion of the first group in the lead longitudinal direction, is formed, and the terminal joining portion of the first group is formed. Step for forming lead wires adjacent to each other by leaving a connecting portion for connecting the rear end portion of the first portion and the front end portion of the terminal joining portion of the second group, and for lead frame processing after the first step. A second step of performing the remaining processing, and after the second step, the connecting portion left uncut in the first step is cut by laser light irradiation to separate each inner lead individually. The third method is to provide a method for processing a lead frame.

Further, in the present invention, when the connecting portion is left uncut at a position close to the rear end portion of the terminal joining portion of the second group, it is preferable that the connecting portion be cut by laser light irradiation in the third step. Either before or after the joining of the terminal joining portion and each terminal of the semiconductor chip.

Further, in the present invention, when the connecting portion for connecting the rear end portion of the first group of terminal joint portions and the distal end portion of the second group of terminal joint portions is left uncut, preferably,
The cutting of the connecting portion by laser light irradiation in the third step is performed before joining the terminal joining portion and each terminal of the semiconductor chip.

In the lead frame processing method as described above, preferably, after forming the leads in the first step and before cutting the connecting portion by laser light irradiation in the third step, A support member is fixed to at least the inner lead portion of the lead.

In this case, it is preferable that a supporting plate having a penetrating portion provided at a position corresponding to the connecting portion is bonded as the supporting member.

Further, according to the present invention, there is provided a lead frame processed by the above method for processing a lead frame.

Further, according to the present invention, the semiconductor chip is mounted on the lead frame as described above, each terminal of the semiconductor chip and the terminal joint portion of the inner lead are joined, and the semiconductor chip and Provided is a resin-molded semiconductor device in which a portion including the inner lead is integrally sealed.

[0019]

In the present invention having the above-described structure, the first group in which the terminal joint portions formed at the inner tip portions of a large number of inner leads (hereinafter also referred to as appropriate leads) are displaced from each other in the longitudinal direction of the leads. And the second group of terminal joints are formed, and the second group of terminal joints are located outside the first group of terminal joints in the lead longitudinal direction. As a result, it is possible to arrange a large number of terminal joints within a certain size while ensuring the minimum width required for joining with each terminal of the semiconductor chip, and to increase the number of pins without impairing good jointability. Also, the pitch can be narrowed. In particular, in the case of wire bonding, adjacent wires do not come into contact with each other and the tip of the joining jig does not interfere with the adjacent wires or the terminal joining portion.

Further, by leaving the connecting portion at a position close to the rear end portion of the terminal joining portion of the second group, the rigidity between adjacent inner leads is maintained, and lead deformation and lead arrangement disorder. Is prevented. Therefore, the accuracy of the lead pitch of the inner leads can be maintained, and the metal plate material in the process can be easily handled without being deformed.

Subsequently, the other processing remaining in the lead frame processing is performed, and then the connecting portion is cut by laser light, whereby the inner leads are individually separated. At this time, as described above, since the position of the connecting portion is close to the rear end portion of the terminal joining portion of the second group, the heat effect due to the heat input at the time of laser cutting of the connecting portion may cause the first group. Of course, it does not extend to the terminal joints of the second group, an oxide film is not formed on the terminal joints which should be a sound surface, and thermal stress and thermal strain It does not remain in the part of the metal plate material. Therefore, a good terminal joint can be obtained.

As described above, in the present invention, by performing the above-described special processing, the plate thickness is 0.3 mm or less, the minimum value of the lead pitch is 2 times or less of the plate thickness, and the width of the lead gap is reduced. Even in the case of processing a lead frame having a large number of pins and a narrow pitch such that the minimum value is equal to or less than the plate thickness, the bondability with the terminals of the semiconductor chip can be improved.

Further, in the above case, since the connecting portion is provided at a position close to the rear end portion of the terminal joining portion of the second group,
Even if the connecting portion is laser cut after joining each terminal of the semiconductor chip to the terminal joining portion, the already joined terminal joining portion (lead) or bonding wire (when using wire bonding) is exposed to laser light or heat. It has no effect. Therefore, the laser cutting of the connecting portion may be performed before or after the joining of each terminal of the semiconductor chip and the terminal joining portion. In particular, when the connecting portion is laser-cut after being joined to each terminal of the semiconductor chip, the joining of the semiconductor chip and the terminal joining portion is performed with the joining portion left, so that the terminal joining portion also moves during the joining. This can be avoided and the workability of joining can be further improved. Further, in this case, the processing of the lead frame is completed after mounting and joining the semiconductor chip.

In addition, the connecting portion is not provided at a position close to the rear end portion of the second group terminal joint portion, but the rear end portion of the first group terminal joint portion and the second group terminal joint portion are connected. When the connecting portion is provided so as to be connected to the tip portion, the range of the thermal influence at the time of laser cutting of the connecting portion is the range of the rear end portion of the first group of terminal joints and the tip of the second group of terminal joints. It is limited to only the part, and almost no thermal effect is exerted on the main part of both terminal joints. Therefore, even at this time, an oxide film is not formed on the terminal joint portion that should be a healthy surface, and thermal stress and thermal strain do not remain in the metal plate material in that portion, and a good terminal joint is achieved. Part is obtained.

Further, when the connecting portion is provided so as to connect the rear end portion of the first group of terminal joint portions and the leading end portion of the second group of terminal joint portions as described above, each of the semiconductor chips is Prior to joining with the terminal, it is necessary to laser-cut the connecting portion to separate each inner lead individually. This is because, in this case, when the connection portion is laser-cut after joining the terminals of the semiconductor chip and the terminal joining portion,
This is because there is a possibility that the laser beam may hit the already joined terminal bonding portion (lead) or the bonding wire (when using wire bonding), or the portion may be thermally affected.

By fixing the support member to at least the inner lead of the lead, which tends to have low rigidity, after the formation of the lead and before the cutting of the connecting portion by laser light irradiation. The inner leads are constrained to further enhance their rigidity, and deformation of the leads and disorder of the lead arrangement are prevented. Therefore, the accuracy of the size and shape can be maintained more reliably, and the metal plate material can be handled more easily during the process. Further, even after the laser cutting of the connecting portion, the inner lead is still restrained by the supporting member, so that the rigidity thereof is maintained and the deformation of the lead and the disorder of the lead arrangement are prevented. Furthermore, since the terminal joining portion is constrained by this supporting member, the terminal joining portion is not broken even when the terminals are joined to each terminal of the semiconductor chip using wire bonding or bumps after mounting the semiconductor chip. It is possible to avoid the displacement due to movement, and it is possible to realize good bondability.

Further, by bonding a supporting plate having a penetrating portion at a position corresponding to the connecting portion as a supporting member, particles of molten metal generated when the above-mentioned connecting portion is laser cut, that is, spatter, dross, etc. Molten metal, which causes adhesion of the metal, is removed while passing through the penetration portion. In this way, by laser cutting the connecting portion at the position of the penetrating portion provided on the support member, the metal member to be removed by laser cutting is minimized because the support member is not laser cut, and spatter, dross, etc. As the volume decreases, the dross that is then adhering is contained in the penetration. Therefore,
In the subsequent joining work, etc., the projecting dross does not come into contact with the processing jig, restraint jig, fixing jig, etc., deformation and processing errors and dimensional errors are avoided, and moreover irregular dross etc. The occurrence of electrical shorts due to flaking is avoided.

[0028]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A lead frame processing method, a lead frame and a semiconductor device according to a first embodiment of the present invention will be described with reference to FIGS.

However, in this embodiment, the lead frame for the QFP type semiconductor device has a plate thickness of 0.3 mm or less,
A case of processing a multi-pin, narrow-pitch lead frame in which the minimum lead pitch is less than twice the plate thickness and the minimum lead gap width is less than the plate thickness will be described.

FIG. 1 is a view showing an example of a lead frame processed by this embodiment. In FIG. 1, a lead frame 200 includes a number of inner leads 202,
Outer leads 203 that are continuous with the inner leads 202 are provided. The inner leads 202 and the outer leads 203 that are adjacent to each other are supported by a dam bar 204 so as to be connected to each other, and the arms 205 are also supported by the dam bar 204. . In addition, a support plate 215 having a through groove 215A in the center of the lead frame 200.
(See FIG. 4) is fixed. This support plate 215 is
It is fixed to the inner portion of the inner lead 202 by an adhesive film 215a (see FIG. 4).

The inner leads 202 extend so as to converge to the center of the lead frame 200, and the terminals adjacent to each other at the inner tip portions of the inner leads 202 joined to the semiconductor chip 210 (see FIGS. 7 to 9). The joint portions 202a and 202b belong to the first group and the second group, respectively, and the terminal joint portion 20 belonging to the first group.
The terminal joint portion 202b belonging to the second group is located outside the lead wire 2a, being displaced outward in the longitudinal direction of the lead. That is, the terminal joining portions 202a and 202b are arranged in a staggered manner in which they are staggered in two steps in the longitudinal direction of the lead, and have a width sufficient for electrical connection. The adjacent lead gaps 208 inside the inner leads 202 are particularly narrow and have an extremely fine structure, and the processing of this portion is the most strict in dimensional accuracy and cleanliness in the processing of the lead frame.

Further, a positioning hole 207 is provided on the outer peripheral portion of the lead frame 200 for positioning when the terminals of the semiconductor chip and the inner leads 202 are connected. The dam bar 204 has a role of blocking the resin when the semiconductor chip is molded and a role of reinforcing the inner leads 202 and the outer leads 203, and is removed after the molding.

Next, a method of processing the lead frame of this embodiment and a manufacturing process of a semiconductor device using the lead frame will be described with reference to FIG. First, step S1 in FIG.
In 00, a thin metal plate such as steel, copper alloy, 42 alloy, Kovar, etc. is flattened by applying it to a leveler,
Move on to actual processing. Next, in step S110, the outer leads 203 are formed on the metal plate, and the metal plate is washed and dried (step S111). This step S11
The processing at 0 may be performed by using a laser beam or may be processing such as conventional etching processing or pressing processing, but etching processing or pressing processing can be performed more efficiently.

After that, in step S120, a portion of the metal plate to be the inner lead 202 is processed, and the metal plate is washed and dried (step S121). This step S1
The processing at 20 may be performed using laser light or may be processing such as conventional etching or pressing. In particular, when laser cutting is used, fine processing can be performed, but in that case, a heat-affected zone due to heat input at the time of laser light irradiation, that is, a dross to be described later, and a chemical polishing treatment such as sputtering and an oxide film on the surface are performed. It must be removed by surface treatment.

The inner tip portion of the inner lead 202 when step S120 is completed will be described with reference to FIG. However, FIG. 3 is a diagram after the support plate 215 is fixed in the next steps S140 to S151. In this embodiment, the terminal joining portions 202a and 202b joined to the respective terminals of the semiconductor chips 210 adjacent to each other are arranged in two staggered arrangement in the longitudinal direction of the lead, as described with reference to FIG. This makes it possible to arrange a large number of terminal joining portions 202a and 202b in a certain size while ensuring the minimum width required for joining, and increase the number of pins to the maximum without impairing good joining properties and The pitch can be narrowed. Furthermore, as will be described later, in the case of joining the semiconductor chip 201 by using wire bonding, adjacent wires may come into contact with each other or the tip of the joining jig may interfere with the adjacent wire or terminal joining portion. Disappears.

A connecting portion for connecting the leads to each other is provided inside the inner lead 202. That is, a connection that connects adjacent leads by slightly leaving a position nearer to the outer side (outer lead 203 side) of the terminal joints 202a and 202b arranged in a staggered manner outside the terminal joint 202b on the outer side in the longitudinal direction of the lead. Form part 5.
As a result, the rigidity between adjacent leads is maintained,
Deformation of leads and disorder of lead arrangement are prevented. Therefore, the accuracy of the lead pitch of the inner leads 202 is maintained, and the handling is easy without deforming the metal plate material during the process.

Next, in step S130, the terminal joint portions 202a and 202b at the inner tip of the inner lead 202 are formed.
Apply silver plating to. Thus, by limiting the plating area, silver, which is the metal for plating, can be saved. Further, the silver plating further improves the bondability of the terminal bonding portions 202a and 202b. The metal to be plated may be silver, gold, tin or the like. After the step S130, cleaning and drying are performed (step S13).
1).

Next, in step S140, the adhesive film 215a is mounted on the support plate 215, and in steps S150 and S151, the lead frame 20 is formed on the adhesive film 215a.
0 is mounted and bonded (fixed). At this time, the support plate 215 is fixed to the inner portion of the inner lead 202 of the lead frame 200. By thus restraining the inner portion of the inner lead 202 with the support plate 215,
Its rigidity is further strengthened, and the deformation of the leads and the disorder of the lead arrangement are prevented. Therefore, the accuracy of the size and shape of the leads is maintained more reliably, and the handling of the metal plate material during the process is further facilitated.

4A and 4B are views showing the shape of the support plate 215. FIG. 4A is a top view and FIG. 4B is a sectional view taken along line BB of FIG. 4A. However, (b) shows a state in which the adhesive film 215a is mounted. The support plate 215 is preliminarily formed with an elongated notch-shaped through groove 215A. When the support plate 215 is fixed to the inner portion of the inner lead 202, the connecting portion 5 is just positioned at the position of the through groove 215A. To be done. The support plate 415 should not electrically short-circuit the leads of the lead frame 200, and its material is a heat-resistant and insulating ceramic such as alumina or mullite, or polyimide or epoxy. The above organic resin materials are suitable. But,
Any metal plate can be used as long as it is a metal plate having at least a contact surface with the inner leads 202 coated with an insulating film. Further, by using a heat-resistant adhesive material as the adhesive film 215a, the adhesive film 215a does not deteriorate during the integral sealing by the resin mold 230 (see FIG. 9), and the support plate 215 and the inner lead 202 are The sticking part of does not come off.

Next, in step S160, as shown in FIG. 6, the connecting portion 5 connecting the leads adjacent to each other.
Laser cutting the terminal joint portion 202a and the terminal joint portion 20
2b, and thus the inner leads 202, are individually separated.
By cutting the connecting portion 5 by laser, the effect of maintaining rigidity by the connecting portion 5 and preventing deformation of leads and disorder of arrangement is lost, but instead, the inner lead 202 is still restrained by the support plate 215. Its rigidity is further maintained and strengthened, deformation of the leads and disorder of the lead arrangement are prevented, and therefore the accuracy of the size and shape is maintained, and the ease of handling the metal plate material during the process is not impaired.

The laser beam used for this laser cutting is converted once into a slender elliptical section by a cylindrical lens or the like so that the spot 113B on the workpiece has a slender elliptical section. By the laser light irradiation of, the shape after cutting along the lead gap 208 is obtained,
Laser cutting can be performed efficiently.

FIG. 5 is a sectional view showing the state of laser cutting. A YAG laser is suitable as the laser beam used here, and fine and highly accurate processing is possible. In FIG. 5, the laser beam 113A is condensed by the condenser lens 116 so that a sufficient heat energy density can be supplied, and the tip of the processing nozzle 113 is irradiated onto the surface of the connecting portion 5 together with the assist gas 117A. Then, that portion is melted, and this serves as a heat source, and this melting progresses sequentially from the surface in the depth direction, and is eventually cut. Since the laser beam 113A can be condensed in an extremely small amount, it is suitable for processing of fine dimensions, and the desired connecting portion 5 can be melted and cut by irradiating the laser beam with high energy density for a very short time, and the metal plate itself. Almost no deformation or external force is applied to.

At this time, since the connecting portion 5 is positioned at the position of the through-groove 215A of the support plate 215, most of the molten metal particles 13 causing adhesion of spatter, dross, etc. generated during laser cutting are mostly formed. Assist gas supply port 1
The assist gas 117A supplied from 17 blows off the gas while passing through the through groove 215A. That is, the through groove 215A functions as an escape portion for the molten metal particles 13. Further, since the supporting plate 215 is not laser-cut, the metal portion removed by the laser cutting is minimized, and the amount of spatter, dross, etc. is reduced.

It is impossible to completely eliminate the molten metal even if the amount of molten metal decreases, and a portion of the molten metal still remains and adheres to the vicinity of the cut surface on the back surface of the inner lead 202 and solidifies to form the dross 10. However, if the plate thickness of the support plate 215 is made sufficiently thicker than the height of the dross 10, the dross 10 will have the through groove 215 of the support plate 215.
It will be completely contained within A.

Although the dross 10 in the through groove 215A cannot be completely removed by a mechanical treatment or a chemical surface treatment, the dross 10 can be removed through the through groove 215.
By completely storing it in A, it is not necessary to completely remove the dross 10 by mechanical treatment, chemical surface treatment, etc., and in the subsequent joining work etc., a processing jig, a restraining jig, a fixing jig, etc. The protruding dross does not come into contact with each other, deformation, processing error and dimensional error are avoided, and electrical short circuit due to irregular removal such as dross is avoided.

For example, the plate thickness of the support plate 215 is usually such that the height of dross generated when laser cutting a metal plate is 0.0.
Since it is about 1 to 0.03 mm, it may be made more than that. Also, considering that the rigidity of the support plate 215 is sufficiently secured, it is actually desirable that the plate thickness thereof be about 0.3 to 0.5 mm.

If the size of the supporting plate is made as small as possible so that the connecting portion is located slightly outside the end of the supporting plate, it is not necessary to provide the above-mentioned through groove, and the dross can be eliminated. Does not protrude from the end of the support plate.

After step S160, step S1
Spatters, dust, and dust are removed at 70, and cleaning and drying are performed at step S171 to complete the processing of the lead frame. Further, at this point, the terminal joint portions 202a and 202b may be plated.

Subsequently, the semiconductor device is manufactured. That is,
In steps S180 and S181, the support plate 21
After mounting and adhering the semiconductor chip 210 on the substrate 5, the terminals of the semiconductor chip 210 and the terminal joint portions 202a and 202a
and b are joined by wire bonding (step S182).

FIG. 7 is a diagram for explaining the wire bonding process. Although the terminal joint portions 202a and 202b at the inner tip of the inner lead 202 are arranged in a staggered manner as described above, the semiconductor chip 210 in the present embodiment.
The terminals are also arranged in the same staggered arrangement as the terminal joint portions 202a and 202b. However, in FIG.
The terminal on the inner side of 0 is a terminal (hereinafter, also referred to as a bonding pad) 212a, and the terminal on the outer side is a terminal (bonding pad)
212b.

First, as shown in FIG. 7A, the wire 211 is bonded to the bonding pad 212b on the outer side of the semiconductor chip 210 by the capillary 240, and then the inner lead 202 is bonded as shown in FIG. 7B. The wire 211 is passed to the terminal joint portion 202a on the inner side of
The wire 211 is cut. Further, as shown in FIG. 7C, the bonding pad 2 on the inner side of the semiconductor chip 210.
12a, the wire 211 is joined, and then the wire 211 is passed over and joined to the terminal joining portion 202b on the outer side of the inner lead 202 as shown in FIG.
Cut 1. A gold wire is generally used as the wire 211.

By such a method, even if the lead pitch is extremely narrow, wire bonding can be easily performed so that the wires 211 do not contact each other, and the capillary 24
The tip of 0 does not interfere with the adjacent wire 211. Further, even when the bonding is performed by the wedge bonding method in which ultrasonic vibration is applied to improve the bonding property, the bonding can be performed firmly without any positional deviation. Further, also in this step S182, since the terminal joining portions 202a and 202b are fixed by the support plate 215, the terminal joining portions 202a and 202b are prevented from moving, and good joining properties can be realized without displacement. FIG. 8A is a top view showing a state where step S182 is completed, and FIG. 8B is a cross-sectional view taken along line BB of FIG. 8A.

After step S182, step S1
At 90, the inner lead 202, the semiconductor chip 210, and the support plate 215 bonded as described above are molded with the resin mold 2
30 is integrally sealed. Then, in step S200, the outer lead 203 is plated with solder. This solder plating is performed in order to improve solderability when mounting a semiconductor device on an electronic circuit board. Next, step S2
At 01, the dam bar 204 provided between the outer leads 203 is laser-cut, and at step S202, cleaning and drying are performed.

Next, in step S210, the frame member outside the outer lead 203 and the corner portion of the lead frame 200 are cut to separate the outer leads 203 individually, and in step S211, the outer leads 203 are bent and formed into a gull wing shape. In step S212, various electrical characteristics of the semiconductor chip 210 are confirmed.

Further, the product number, the manufacturing number, etc. are marked (step S220), and the appearance is checked to complete the semiconductor device. Then, it is shipped after packaging (step S221).

FIG. 9 is a sectional view of a semiconductor device using the lead frame according to the present embodiment, and FIG. 9A is a sectional view corresponding to the terminal joint portion 202a of the inner lead, and FIG. ) Is the terminal joint portion 202b of the inner lead
It is sectional drawing corresponding to.

As shown in FIGS. 9A and 9B, a support plate 215 is fixed to the lower surface of the inner lead 202 of the lead frame 200 via an adhesive film 215a.
The semiconductor chip 210 is mounted on the support plate 215, and the terminal bonding portion 202a at the inner tip of the inner lead 202 is mounted.
(Or 202b) are the bonding pads 212a (or 212b) and the wires 21 of the semiconductor chip 210, respectively.
They are electrically joined by wire bonding using 1. Then, the support plate 215 and the semiconductor chip 210
A portion inside the inner lead 202 including the above is integrally sealed by a resin mold 230, and the outer lead 203 outside the resin mold 230 is bent and formed in a gull wing shape.

Incidentally, the bonding pad 2 of the semiconductor chip 210
As a method of joining the terminals 12a and 212b and the terminal joining portions 202a and 202b, wire bonding is generally used as described above. However, the terminal joining portion is extended right above the terminals of the semiconductor chip and joined by gold bumps or the like. Any method may be used. Further, in this embodiment, the semiconductor chip 210
Although the example in which the chip is directly mounted on the support plate 215 is shown, a die pad may be provided in advance on the lead frame and the semiconductor chip may be mounted on the die pad.

According to the present embodiment as described above, the arrangements of the adjacent terminal joint portions 202a and 202b belong to the first group and the second group which is deviated from the first group in the longitudinal direction of the lead, respectively. That is, since the two staggered staggered arrangements are used, the number of pins and the pitch can be narrowed to the limit without impairing good joining property.

Further, the terminal joint portion 2 on the outer side in the longitudinal direction of the lead.
Since the connecting portion 5 is formed by slightly leaving the adjacent position on the outer side of 02b, the rigidity between adjacent leads is maintained, and deformation of the leads and disorder of the lead arrangement are prevented. Therefore, the accuracy of the lead pitch of the inner leads 202 is maintained, and the handling is easy without deforming the metal plate material during the process.

Further, since the position of the connecting portion 5 is located closer to the outer side than the terminal connecting portion 202b on the outer side in the longitudinal direction of the lead, the heat influence due to the heat input at the laser cutting of the connecting portion 5 causes the terminal joining. Since neither the portion 202a nor the terminal joint portion 202b is reached, it is possible to obtain a good terminal joint portion free from the influence of the oxide film, thermal stress, and thermal strain.

Therefore, a multi-pin, narrow-pitch lead frame having a plate thickness of 0.3 mm or less, a minimum lead pitch of not more than twice the plate thickness, and a minimum lead gap width of not more than the plate thickness. Even in the case of processing, the bondability with the terminal of the semiconductor chip can be improved, and the reliability of the terminal bonding portion can be improved.

The support plate 215 is attached to the inner lead 20.
Since it is fixed to the inner part of 2 and restrains that part, its rigidity is further strengthened, and the deformation of the leads and the disorder of the lead arrangement are prevented, so that the accuracy of the size and shape can be more reliably maintained. It becomes easier to handle the metal plate material during the process. In addition, the inner lead 202 can be continuously restrained even after the laser cutting of the connecting portion 5 to exert its effect, and the semiconductor chip 210 and the terminal joining portion 20 can be exerted.
Even when the 2a and 202b are joined, it is possible to prevent the positional displacement of the terminal joining portions 202a and 202b and realize good joining properties. Moreover, it helps improve the strength and reliability of the semiconductor device when it is finally manufactured.

Further, since the connecting portion 5 is positioned at the position of the through groove 215A of the supporting plate 215, the through groove 215A can be used as an escape portion for the molten metal particles 13, and since the supporting plate 215 is not laser-cut, the dross is not generated. Etc. can be reduced. Further, since the plate thickness of the support plate 215 is made sufficiently thicker than the height of the dross 10 and the dross 10 is completely accommodated in the through groove 215A, it is not necessary to remove the dross 10 purposely, and it is not necessary to remove the processing jig or the restraining jig. It is possible to avoid deformation and error due to contact between jigs such as tools and fixing jigs and the protruding dross, and to avoid electrical short circuit due to irregular peeling of dross.

Next, a method of processing a lead frame according to the second embodiment of the present invention will be described with reference to FIG.

This embodiment is a modification of the first embodiment, in which each terminal of the semiconductor chip and the terminal bonding portion are wire-bonded, and then the connecting portion is laser-cut. That is, in steps S260 and S261 of FIG. 10, the semiconductor chip is mounted and adhered on the support plate, and in step S262, each terminal of the semiconductor chip and the terminal bonding portion are bonded by wire bonding, and then step S27.
The 0-connection portion is laser-cut, and further spatter, dust, and dust are removed (step S280), and cleaning and drying (step S281) are performed. The steps other than these steps S260 to S281 are the same as the steps in FIG. 2, and the steps equivalent to the steps in FIG. 2 are denoted by the same reference numerals in FIG.

When the connecting portion 5 is provided closer to the outer lead than the terminal connecting portion on the outer side in the longitudinal direction of the lead as shown in FIG. 3, each terminal of the semiconductor chip 210 and the terminal connecting portion 202.
Even if the connecting portion 5 is laser-cut after joining with a and 202b, the already joined terminal joining portions (leads), wires, etc. are not irradiated with laser light, and do not melt or have a thermal effect. In this embodiment, the semiconductor chip 210
After wire-bonding the respective terminals to the terminal joint portions 202a and 202b, the connecting portion 5 can be laser-cut.

In this case, the semiconductor chip 210 and the terminal joint portions 202a and 202a are left with the connecting portion 5 left.
Since it is joined with b, the terminal joining part 20
The movement of 2a and 202b is avoided, and the bondability can be further improved. Of course, there is no difference in that the laser cutting of the connecting portion 5 is performed before the resin mold 230 is integrally sealed, but in the case of the present embodiment, the semiconductor chip 210 is cut.
After mounting and joining, the processing of the lead frame 200 is completed.

According to the present embodiment as described above, not only the same effect as in the first embodiment can be obtained, but also the wire bonding is performed with the connecting portion 5 left, so that the connecting portion 202a at the time of wire bonding. , 202b are prevented from moving, and the bondability can be further improved. Further, the fixing strength of the support plate 215 may be slightly lower than that of the first embodiment.

Next, a method of processing a lead frame according to the third embodiment of the present invention will be described with reference to FIG.

In this embodiment, the support plate 215 is not fixed to the inner portion of the inner lead 202 as in the first and second embodiments, but instead as shown in FIG. The material 250 is filled in the lead gap 208 of the inner lead 202. A grease-like material is used as the filling material 250, and the filling material 250 can be easily filled by a squeegee method, a method of placing it on the inner lead 202 portion and pressing from both sides, or the like. Further, the filling material 250 is at least the terminal joint portion 202.
It is necessary to fill in the vicinity of a and 202b, but it is desirable to fill up to the tip of the lead as much as possible. The other steps are the same as those in the first or second embodiment. However, FIG. 11A is a view corresponding to FIG. 3 in which the processing of the portion to be the inner lead is completed, and FIG.
1A is a cross-sectional view taken along the line BB of FIG. 1A, and in FIG. 11, the same members as those in FIG. 3 are denoted by the same reference numerals.

By thus filling the lead gap 208 of the inner lead 202 with the filling material 250, the size of the lead gap 208 is maintained, and the leads may come into contact with each other even when the leads are deformed during wire bonding or the like. Absent. Therefore, good bondability can be realized without displacement.

Further, in this case, since there is no support plate, there is a concern that dross or the like generated at the time of laser cutting of the connecting portion 5 may protrude from the plate surface, but they are removed by mechanical treatment or chemical surface treatment. It is possible to

According to the present embodiment as described above, the filling material 250 performs the same function as the support plate in the first and second embodiments, and the terminal joint portions 202a, 202b.
It is possible to realize a good bondability without displacement and to manufacture a highly reliable semiconductor device. Also, the connecting portion 5
Dross and the like generated during laser cutting can be removed by mechanical treatment or chemical surface treatment.

Next, a lead frame processing method, a lead frame and a semiconductor device according to a fourth embodiment of the present invention will be described with reference to FIGS.

FIG. 12 is a view showing an example of a lead frame processed by this embodiment. The lead frame 400 of this embodiment has a large number of inner leads 4 as in FIG.
02, outer lead 403, dam bar 404, and positioning hole 407. In addition to that, a die pad 401 for mounting a semiconductor chip is provided in the central portion of the lead frame 400. Around the die pad 401, a cutout portion 406 is provided except for the arm 405, the inner lead 402 is separated from the die pad 401 by the cutout portion 406, and the adjacent inner leads 402 are respectively cut by the cutout portion 406. It is separated. Further, a support plate 415 having a through groove 415A is fixed to an inner portion of the inner lead 402 at the center of the lead frame 400 by an adhesive film 415a (see FIG. 17).

At the inner tip portion of the inner lead 402 joined to the semiconductor chip 210 (see FIG. 17),
Adjacent terminal joints 402a and 402b belong to the first group and the second group, respectively, and the terminal joints 402b belonging to the second group are displaced outward in the lead longitudinal direction from the terminal joints 402a belonging to the first group. Located. That is, similar to the first embodiment, the terminal joint portion 402a
And 402b are arranged in a staggered manner in which they are staggered in two stages in the longitudinal direction of the lead, and have a width sufficient for electrical connection. However, these terminal joints 402a, 4a
The positional relationship between 02b and the through groove 415A of the support plate 415 is slightly different from that of the first embodiment, but the positional relationship will be described in detail with reference to FIG.

Next, a method of processing the lead frame of this embodiment and a manufacturing process of a semiconductor device using the lead frame will be described with reference to FIG. Step S30 of FIG.
From 0 to step S311, step S10 of FIG.
Similarly to 0 to step S111, the metal plate is leveled, outer leads 403 are formed, and cleaning and drying are performed.

Next, in step S320, a portion of the metal plate to be the inner lead 302 is processed by an appropriate method similar to FIG. 2, and the metal plate is washed and dried (step S321). The inner tip portion of the inner lead 402 at this time is as shown in FIG.

In this embodiment, the semiconductor chips 4 adjacent to each other are
10 terminal joining portions 402a and 40 joined to each terminal
2b are arranged in a staggered pattern in which they are staggered in two steps in the longitudinal direction of the lead, but the rear end portion of the terminal joint portion 402a on the inner side in the longitudinal direction of the lead and the outer terminal joint portion 402 are staggered.
A connecting portion 55 is provided so as to connect with the tip portion of b.
That is, the tip portion of the terminal joint portion 402b and the terminal joint portion 40
The rear end portion of 2a is connected by a T-shaped connecting portion 55. However, FIG. 14 shows the following steps S340 to S340.
FIG. 6 is a diagram after fixing the support plate 415 in step S351 and is a diagram corresponding to FIG. 3.

The shape of the inner lead 402 as described above is essentially the same as that of the first embodiment. Therefore, the zigzag arrangement allows the number of pins and the pitch to be narrowed to the limit without impairing the good joining property, and the contact between the adjacent wires or the connection between the bonding jig and the adjacent wire or the terminal bonding portion. There is no interference. Further, by forming the connecting portion 5, the rigidity is maintained, the deformation of the leads and the disorder of the arrangement are prevented, the accuracy of the lead pitch is maintained, and the metal plate material is easily handled during the process.

Next, in step S330, the terminal joint portions 402a, 402b at the inner tip of the inner lead 402 are formed.
Silver is plated on the surface and washed and dried (step S3).
31).

Next, as in steps S140 to S151 of FIG. 2, the support plate 415 is processed in step S340.
The adhesive film 415a is mounted on the lead frame 4 and the lead frame 4 is formed on the adhesive film 415a in steps S350 and S351.
Fix 00. Further, the support plate 415 is also provided with an elongated notch-shaped through groove 415A so that the connecting portion 55 is exactly positioned at the position of the through groove 415A of the support plate 415. That is, the through-grooves 415A are located between the terminal joining portions 402a and the terminal joining portions 402b which are arranged in a staggered manner, and the terminal joining portions 402a and the terminal joining portions 402b are arranged while sandwiching the through-grooves 415A. Become. Accordingly, the terminal joint portion 402a and the terminal joint portion 4
Each of the parts 02b is firmly fixed to the support plate 415 while avoiding the through groove 415A, the rigidity is surely strengthened and the accuracy of the size and shape thereof is maintained, and at the time of bonding with the semiconductor chip 410. Further, it is possible to realize better bondability without shifting the positions of both the terminal joint portion 402a and the terminal joint portion 402b.

Next, in step S360, FIG.
As shown in FIG. 5, the T-shaped connecting portion 55 connecting the adjacent leads is laser-cut to separate the terminal joint portion 402a and the terminal joint portion 402b, and thus the inner lead 402 individually. As the laser beam used in this laser cutting, an elongated elliptical cross section as in the first embodiment may be used, but considering that the connecting portion 55 is T-shaped, FIG. Spot 11 on the workpiece shown
You may use it as it is with a circular cross section which becomes 3D. After the above step S360, in step S370, sputtering,
Also, dust and dirt are removed, cleaning and drying are performed in step S371, and the processing of the lead frame is completed.

Subsequently, the semiconductor device is manufactured. That is,
After mounting and adhering the semiconductor chip 410 on the die pad 401 in steps S380 and S381, each terminal of the semiconductor chip 410 and the terminal bonding portions 402a and 402b are bonded by wire bonding as in step S182 of FIG. Step S382). FIG. 16 is a top view showing a state in which this step S382 is completed.
16 (a), and FIG. 16 (b) is a sectional view taken along line BB of FIG. 16 (a). In FIG. 16, a semiconductor chip 41
The bonding pads 412a and 412b of 0 are also arranged in a staggered manner, and the bonding pad 412b on the outer side of the semiconductor chip 410 and the terminal bonding portion 402a on the inner side of the inner lead 402 are connected to each other by the wire 411, and the semiconductor chip 410 is connected. The inner bonding pad 412a and the outer terminal bonding portion 402b of the inner lead 402 are connected by a wire 411. This step S
Also in 382, the terminal joint portion 40 is formed by the support plate 415.
Since 2a and 402b are fixed, it is possible to prevent the terminal joint portions 402a and 402b from moving, and it is possible to realize good jointability without displacement.

In this embodiment, unlike the second embodiment (see steps S260 to S281 in FIG. 10), the connecting portion 55 cannot be laser-cut after the wire bonding in step S382. This is because, as can be seen from FIGS. 15 and 16, the semiconductor chip 410
This is because the wire 411 for joining the joining pad 412a and the terminal joining portion 402b is directly above the connecting portion 55, so that if the connecting portion 55 is laser-cut after the wire bonding, the wire 411 is also cut simultaneously.

After the above step S382, step S3
At 90, the inner lead 402, the die pad 401, the semiconductor chip 410, and the support plate 415 are resin-molded 43.
0 (see FIG. 17) to integrally seal. From the subsequent solder plating on the outer leads 403 in step S400 to the semiconductor chip 410 in step S412.
The confirmation of the electrical characteristics of (1) and the marking of the product number, the manufacturing number, and the like in step S420 are the same as those in steps S200 to S220 in FIG. 2, and finally, they are shipped after packaging (step S421).

FIG. 17 is a sectional view of a semiconductor device using a lead frame according to this embodiment. FIG. 17A is a sectional view corresponding to the terminal joint portion 402a of the inner lead, and FIG. ) Is the terminal joint 4 of the inner lead
It is sectional drawing corresponding to 02b.

As shown in FIGS. 17A and 17B, the support plate 4 is provided on the lower surfaces of the inner leads 402 and the die pad 401 of the lead frame 400 via an adhesive film 415a.
15 is fixed, the semiconductor chip 410 is mounted on the die pad 401, and the terminal bonding portion 402a (or 402b) at the inner tip of the inner lead 402 is connected to the bonding pad 412a (or 412b) of the semiconductor chip 410, respectively. They are joined by wire bonding using the wire 411. Although the adhesive film 415a is also present on the side surface of the support plate 415 in FIG.
02 and the surface of the die pad 401 in contact with the lower surface is sufficient. In addition, as can be seen by comparing FIGS. 17A and 17B, the terminal joint portion 40 with the through groove 415A interposed therebetween.
2a and the terminal joint portion 402b are arranged separately. Further, as in FIG. 2, a portion inside the inner lead 402 including the die pad 401, the support plate 415, and the semiconductor chip 410 is integrally sealed by the resin mold 430, and the outer lead 403 outside the resin mold 430 is formed. It is bent and shaped like a gull wing.

Although an example in which the die pad 401 is provided on the lead frame 400 and the semiconductor chip 410 is mounted on the die pad 401 has been described above, the die pad is omitted and the semiconductor chip 410 is mounted on the support plate as in the first embodiment. The semiconductor chip may be directly mounted via the adhesive film.

According to this embodiment as described above, not only the same effects as those of the first embodiment can be obtained, but also the following effects can be obtained. That is, the T-shaped connecting portion 55 provided between the terminal joint portion 402a and the terminal joint portion 402b is attached to the support plate 4.
15 in the position of the through groove 415A, and the through groove 41
Terminal joining portion 402a and terminal joining portion 402b with 5A interposed therebetween.
Since they are arranged separately from each other, both terminal joint portions 402
The a and 402b are firmly fixed to the support plate 415 while avoiding the through-grooves 415A, the rigidity is surely strengthened, and the accuracy of the size and shape is maintained. In addition, the semiconductor chip 410
It is possible to realize a better bondability without shifting the position of any of the terminal bonding portions 402a and 402b even when bonding with.

If the thickness of at least the portion of the metal plate that will be the inner lead is reduced in advance from the original thickness, the following effects can be obtained in forming the inner lead. First, when laser cutting is performed, the amount of molten metal is reduced and the amount of dross, spatter, etc. is reduced due to the thin plate thickness. Further, in the case of performing the press working, the force applied to the blade is reduced due to the thin plate thickness, and a defect due to damage of the blade is avoided. Furthermore, when etching is performed, it is possible to avoid a situation in which the corrosion hole does not completely penetrate due to the progress of side etching, and it is possible to easily form a fine through groove. In particular, in the case of a processing method that has been generally and conventionally used, such as press processing or etching processing, extremely fine processing can be performed exceeding the conventional processing limit. Further, in this case, by providing the connecting portion 5 or 55, it is possible to avoid the reduction in rigidity due to the thin plate of the metal plate.

Further, in the above-described first to fourth embodiments, the terminal joining portions are composed of the first group and the second group, and are arranged in two staggered arrangement in the lead longitudinal direction in a staggered arrangement. However, it may be shifted in multiple stages of three or more.

Further, the support plate in the first, second and fourth embodiments and the filler in the third embodiment play an auxiliary role of the connecting portion, and the object of the present invention is to be achieved. It is not absolutely necessary to achieve it. Therefore, when the lead pitch is large to some extent, the support plate and the filler can be omitted.

[0095]

As described above, according to the present invention, the second group of terminal joints are displaced from the first group of terminal joints outside the longitudinal direction of the lead, so that good jointability is not impaired and the terminal joints are maximized. The number of pins can be increased and the pitch can be narrowed, and the joining work becomes easy. Further, since the connecting portion is formed, the rigidity between the adjacent inner leads is maintained,
Further, the deformation of the leads and the disorder of the arrangement are prevented, the accuracy of the lead pitch can be maintained, and the handling of the metal plate material can be facilitated. Further, since the position of the connecting portion is located close to the rear end portion of the terminal bonding portion of the second group, the thermal effect of laser cutting does not affect the terminal bonding portion, and the oxide film, thermal stress, and thermal strain effect It is possible to obtain a good terminal joint portion without Therefore, when processing a multi-pin, narrow-pitch lead frame in which the plate thickness is 0.3 mm or less, the minimum lead pitch is less than twice the plate thickness, and the minimum lead gap width is less than the plate thickness. Even in this case, the bondability with the terminals of the semiconductor chip can be improved, and the reliability of the terminal bonding portion can be improved.

Further, since the connecting portion is provided so as to connect the rear end portion of the first group terminal joint portion and the leading end portion of the second group terminal joint portion, there is no thermal influence at the laser cutting of the joint portion. It does not reach any terminal joint. Therefore, even at this time, an oxide film is not formed on the terminal joint portion that should be a healthy surface, and thermal stress and thermal strain do not remain in the metal plate material in that portion, and a good terminal joint is achieved. Part is obtained.

Further, since the support member is fixed to at least the inner lead of the leads, the rigidity of that portion is further enhanced, and deformation and disorder of the lead arrangement are prevented.
Therefore, the accuracy of the size and shape can be maintained more reliably, and the metal plate material can be handled more easily during the process. In addition, it has the effect of maintaining its rigidity even after laser cutting of the connection part and preventing deformation of the leads and disorder of the array, and prevents displacement of the terminal connection part even when connecting each terminal of the semiconductor chip to the terminal connection part. And good bondability can be realized.

Further, since the supporting plate having the through-hole provided at the position corresponding to the connecting portion is bonded as the supporting member, the through-hole can be used as an escape area for the molten metal particles and the amount of dross etc. can be reduced. You can Furthermore, since the dross is completely contained in the penetration part, there is no need to remove the dross,
Deformation and error caused by contact between jigs such as processing jigs, restraint jigs, and fixing jigs and protruding dross are avoided, and electrical short circuit caused by irregular peeling of dross is avoided. Avoided.

Therefore, according to the present invention, a small-sized, high-performance and highly reliable semiconductor device can be realized, and such a semiconductor device can be easily and inexpensively manufactured.

[Brief description of drawings]

FIG. 1 is a diagram showing an example of a lead frame processed by a lead frame processing method according to a first embodiment of the present invention.

FIG. 2 is a flowchart showing a manufacturing process of a semiconductor device including the method for processing the lead frame of FIG.

FIG. 3 is an enlarged view of an inner tip portion of an inner lead, which is a view after a support plate is fixed.

4A and 4B are views showing the shape of a support plate, FIG. 4A is a top view thereof, and FIG. 4B is a view showing a state in which an adhesive film is mounted.
It is a sectional view of the -B direction.

FIG. 5 is a cross-sectional view illustrating a situation in which a connecting portion is laser-cut.

FIG. 6 is a diagram showing a state in which the connecting portion shown in FIG. 3 is laser-cut.

7A and 7B are cross-sectional views illustrating a wire bonding process, in which FIG. 7A is a state in which a wire is joined to a terminal on the outer side of a semiconductor chip, and FIG. And (c) is a state in which the wire is joined to the terminal on the inner side of the semiconductor chip,
FIG. 6D is a diagram showing a state in which a wire is passed over and bonded to a terminal bonding portion on the outer side of the inner lead.

8A and 8B are diagrams showing a state in which the wire bonding of FIG. 7 is completed, where FIG. 8A is a top view and FIG. 8B is B- of FIG.
It is sectional drawing of a B direction.

9 is a cross-sectional view of a semiconductor device using the lead frame of FIG. 1, in which (a) is a terminal joint portion 2 of an inner lead.
02a corresponds to the terminal bonding portion 202b of the inner lead.

FIG. 10 is a flowchart showing a semiconductor device manufacturing process including a lead frame processing method according to a second embodiment of the present invention.

11A and 11B are views for explaining a method of processing a lead frame according to a third embodiment of the present invention, in which FIG. 11A is a view corresponding to FIG. 3 in which processing of a portion to be an inner lead is completed;
(B) is a sectional view taken along the line BB of (a).

FIG. 12 is a diagram showing an example of a lead frame processed by a lead frame processing method according to a fourth embodiment of the present invention.

13 is a flowchart showing manufacturing steps of a semiconductor device including the method for processing the lead frame of FIG.

FIG. 14 is an enlarged view of an inner tip portion of the inner lead, which is a view after the support plate is fixed.

FIG. 15 is a view showing a situation where the connecting portion shown in FIG. 14 is laser-cut.

16A and 16B are diagrams showing a state in which wire bonding is completed, where FIG. 16A is a top view and FIG. 16B is a sectional view taken along line BB of FIG. 16A.

17A and 17B are cross-sectional views of a semiconductor device using the lead frame of FIG. 12, where FIG. 17A is a view corresponding to a terminal joint portion 402a of the inner lead, and FIG. 17B is corresponding to a terminal joint portion 402b of the inner lead. FIG.

[Explanation of symbols]

5 Connection Part 10 Dross 13 Molten Metal Particles 55 Connection Part 113 Processing Nozzle 113A Laser Light 113B Spot 113D Spot 116 Condensing Lens 117 Assist Gas Supply Port 117A Assist Gas 200 Lead Frame 202 Inner Leads 202a, 202b Terminal Joint 203 Outer Lead 208 Lead gap 210 Semiconductor chip 211 Wires (gold wire, etc.) 212a, 212b (Semiconductor chip) terminals (or bonding pads) 215 Support plate 215A (Support plate) through groove 215a Adhesive film 230 Resin mold 250 Filling material 400 Lead frame 401 die pad 402 inner leads 402a, 402b terminal joint portion 403 outer lead 410 semiconductor chip 411 wire (gold wire or the like) 412a, 412b (half) Body chips) terminal (or bonding pad) 415 support plate 415A (support plate) through grooves 415a adhesive film 430 resin mold

Claims (8)

[Claims] 1. A lead having a number of inner leads joined to respective terminals of a semiconductor chip at an inner tip portion thereof and outer leads continuously extending outside the inner leads and having a plate thickness of 0.3 mm or less. The minimum value of pitch is the plate thickness 2
In a method of processing a lead frame in which a lead frame having a minimum width of the lead gap of less than or equal to twice the plate thickness is formed from a thin metal plate, a first group of terminal bonding is performed on the inner tip portions of the plurality of inner leads. And a terminal joint portion of the second group, which is located further outward in the longitudinal direction of the lead than the terminal joint portion of the first group, and the rear portion of the terminal joint portion of the second group is formed. First forming a lead adjacent to each other by leaving a connecting portion at a position close to an end portion
And a second step after the first step to perform other processing left in the lead frame processing, and the second step after the second step, which is left uncut in the first step. A third step of cutting the connecting portion by laser light irradiation to separate each inner lead individually. 2. A lead having a number of inner leads joined to respective terminals of a semiconductor chip at an inner tip and outer leads continuously extending outside the inner leads and having a plate thickness of 0.3 mm or less. The minimum value of pitch is the plate thickness 2
In a method of processing a lead frame in which a lead frame having a minimum width of the lead gap of less than or equal to twice the plate thickness is formed from a thin metal plate, a first group of terminal bonding is performed on the inner tip portions of the plurality of inner leads. And a terminal joining portion of the second group, which is positioned outside the terminal joining portion of the first group in the longitudinal direction of the lead, and is formed at a position outside the terminal joining portion of the first group. A first step of forming a lead adjacent to each other by leaving a connecting portion that connects the end portion and the tip portion of the terminal joining portion of the second group, and leaving the lead frame after the first step; And a second step of performing other treatments, and after the second step, the connecting portion left uncut in the first step is cut by laser light irradiation to individually separate each inner lead. Separate Processing method of a lead frame and having a third step. 3. The method of processing a lead frame according to claim 1, wherein cutting of the connecting portion in the third step by laser light irradiation is performed by joining the terminal joining portion and each terminal of the semiconductor chip. A method of processing a lead frame, which is performed before 4. The method of processing a lead frame according to claim 1, wherein the cutting of the connecting portion by laser light irradiation in the third step is performed after joining the terminal joining portion and each terminal of the semiconductor chip. A method for processing a lead frame, which is characterized in that 5. The method of processing a lead frame according to claim 3, wherein the connecting portion is formed by cutting with laser light after the formation of the lead in the first step and in the third step. A method of processing a lead frame, characterized in that a supporting member is fixed to at least the inner lead portion of the lead. 6. The method for processing a lead frame according to claim 5, wherein a supporting plate having a through portion provided at a position corresponding to the connecting portion is bonded as the supporting member. 7. A lead frame processed by the method for processing a lead frame according to claim 1. Description: 8. A semiconductor chip is mounted on the lead frame according to claim 7, each terminal of the semiconductor chip is bonded to a terminal joint portion of the inner lead, and the semiconductor chip and the inner lead are connected by resin molding. A resin-molded semiconductor device in which a portion including the same is integrally sealed.