JPH08160445A - Production of display device - Google Patents

Abstract

PURPOSE: To prevent short circuit due to deposition of plating on the surface of a sealing agent by using a thermosetting epoxy resin adhesive as a sealing agent and performing electroless plating after sufficient heating and polymerization. CONSTITUTION: A sealing agent 3 comprising a thermosetting epoxy resin adhesive is applied on a substrate and a substrate 4 is disposed thereon. The adhesive is heated for curing, for example, at 100 deg.C for 15min. Then a liquid crystal 5 comprising a twist nematic material is injected into the space between the substrate 1 and the substrate 4 and sealed. Further, the surface panel is cleaned with a solvent to remove an excess amount of the hardening agent which is irregularly present on the surface of the sealing agent 3. Further, a catalyst containing palladium is applied on a transparent conductive film 2 of the display panel. Then a plating layer 6 comprising nickel and gold is formed by electroless plating and then heat treated. Thus, no plating layer 6 is deposited on the sealing agent 3, which prevents short circuit of wirings.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a display device, and more particularly to a method of manufacturing a COG (chip on glass) type liquid crystal panel module.

[0002]

2. Description of the Related Art Conventionally, from a process of manufacturing a liquid crystal panel, a process of cleaning a liquid crystal panel, a process of adding a catalyst on an ITO (indium tin oxide) pattern, a process of electroless plating and a process of connecting semiconductor elements. A method of manufacturing the display device has been known. For example, Japanese Patent Laid-Open No. 2-81024 discloses such a method.

[0003]

However, in the conventional method, the catalyst is also added to the sealant of the liquid crystal panel in the step of adding the catalyst to the ITO pattern. Therefore, when electroless plating is performed, the plating adheres to the sealant as well as the ITO pattern. Therefore, there is a problem in that the wiring of the ITO pattern is short-circuited at the sealant portion and cannot operate as a display device.

Therefore, an object of the present invention is to obtain a display device in which a short circuit of a wiring pattern does not occur in the electroless plating process in order to solve such a conventional problem.

[0005]

In order to solve the above-mentioned problems, the present invention uses an epoxy resin as a sealant for a liquid crystal panel in a display device, heat-treats it, and sufficiently crosslinks the sealant. The plating was prevented from precipitating on the surface of the sealant.

[0006]

In the method of manufacturing a display device constructed as described above, the cross-linking reaction of the sealant is sufficiently carried out so that the unreacted resin does not remain on the surface of the sealant. Therefore, the catalyst does not adhere to the surface of the sealant, and the plating does not adhere. Therefore, the occurrence of short circuit due to plating deposition on the surface of the sealant will be eliminated.

[0007]

Embodiments of the present invention will be described below with reference to the drawings. 1 to 6 are cross-sectional views of respective steps showing a method of manufacturing a display device according to the present invention. In FIG.
The transparent conductive film 2 made of ITO (indium tin oxide) was formed on the substrate 1 made of glass by sputtering, and the pattern of the transparent conductive film 2 was formed by photolithography.

Subsequently, as shown in FIG. 2, a sealant 3 made of a thermosetting epoxy resin adhesive is applied on the substrate 1, the substrate 5 is placed, and then heated at 100 ° C. for 15 minutes. Cured. Here, the sealant 3 contains a curing agent, a curing accelerator, a filler, and a solvent in addition to the epoxy resin as the main component,
In this example, an acid anhydride was used as the curing agent.

Next, as shown in FIG. 3, a liquid crystal 5 made of a twisted nematic material was injected and sealed between the substrate 1 and the substrate 4. Furthermore, using a solvent, the display panel of FIG. 3 is washed,
Excessive curing agent and its polymer which were ubiquitous on the surface of the sealant 3 were removed. Here, the surplus curing agent and the polymer of the curing agent must be completely removed because the catalyst in the next step easily adheres.

Next, as shown in FIG. 4, a display panel was made to adhere a catalyst 11 containing palladium on the transparent conductive film 2.
Further, as shown in FIG. 5, electroless plating was performed to form a plating layer 6 made of nickel and gold. Then, heat treatment was performed at 200 ° C. in order to enhance the adhesion of the plated layer 6.

Finally, as shown in FIG. 6, the liquid crystal driving semiconductor element 7 is thermocompression bonded by an anisotropic conductive film to complete a display device. In the display device thus obtained, the plating layer 6 was not deposited on the portion of the sealant 3, and the short circuit of the wiring did not occur. The sealing agent 3 after being cured in this example is D
Thermal analysis by SC and TMA revealed that the heat of reaction due to polymerization of the epoxy resin was extremely small, and the reaction rate of the epoxy resin was 95% or more.

Although an acid anhydride is used as the curing agent in this embodiment, an alicyclic polyamine, aromatic polyamine, dihydrazide, dicyandiamide, or imidazole can also be used. Regarding the amount of the curing agent added, an excessive amount of the curing agent causes polymerization of the excess curing agent, so that the amount of the curing agent equivalent to the amount required for curing the epoxy resin is preferable.

The curing of the sealant 3 is 100 ° C. to 250 ° C.
A processing time of 15 minutes to 1 hour is preferable in the temperature range of. The semiconductor element 7 can be connected by using a shrinkable adhesive in addition to the thermocompression bonding method using the anisotropic conductive film of this embodiment.

[0014]

As described above, according to the present invention, a thermosetting epoxy resin adhesive is used as the sealant 3 and, after sufficient heat polymerization, electroless plating is performed to obtain the sealant 3. There is an effect that a short circuit due to plating deposition on the surface does not occur.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a manufacturing process of a display device of the present invention.

FIG. 2 is a cross-sectional view showing the manufacturing process of the display device of the present invention.

FIG. 3 is a cross-sectional view showing the manufacturing process of the display device of the present invention.

FIG. 4 is a cross-sectional view showing the manufacturing process of the display device of the present invention.

FIG. 5 is a cross-sectional view showing the manufacturing process of the display device of the present invention.

FIG. 6 is a cross-sectional view showing a display device of the present invention.

[Explanation of symbols]

 1 Substrate 2 Transparent Conductive Film 3 Sealing Agent 4 Substrate 5 Liquid Crystal 6 Plating Layer 7 Semiconductor Element 11 Catalyst

Claims (4)

[Claims] 1. A wiring pattern of a transparent conductive film is formed on a substrate 1, a sealant is applied, the substrate 4 is placed, the sealant is heat-cured, and an electroless plating layer is formed on the transparent conductive film. A method of manufacturing a display device, which comprises: 2. The method for manufacturing a display device according to claim 1, wherein the sealant is a thermosetting epoxy adhesive. 3. The method for manufacturing a display device according to claim 2, wherein a reaction rate of the epoxy resin of the epoxy adhesive is 95% or more. 4. The heating temperature of the epoxy adhesive is 100.
The method for manufacturing a display device according to claim 2, wherein the temperature is from 250C to 250C.