JPH08139351A - Method and apparatus for manufacturing solar cell module - Google Patents
Method and apparatus for manufacturing solar cell moduleInfo
- Publication number
- JPH08139351A JPH08139351A JP6273569A JP27356994A JPH08139351A JP H08139351 A JPH08139351 A JP H08139351A JP 6273569 A JP6273569 A JP 6273569A JP 27356994 A JP27356994 A JP 27356994A JP H08139351 A JPH08139351 A JP H08139351A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- laser beam
- solar cell
- cell module
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 41
- 238000000034 method Methods 0.000 title description 14
- 239000010409 thin film Substances 0.000 claims abstract description 99
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000007789 gas Substances 0.000 claims abstract description 13
- 238000005520 cutting process Methods 0.000 claims abstract description 6
- 229910004613 CdTe Inorganic materials 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 17
- 238000010438 heat treatment Methods 0.000 abstract description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 2
- 238000007650 screen-printing Methods 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000010909 process residue Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、特性の安定した太陽電
池モジュールの製造を実現できる太陽電池モジュールの
構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a solar cell module capable of producing a solar cell module having stable characteristics.
【０００２】[0002]
【従来の技術】従来より、ＣｕＩｎＳｅ2 （ＣＩＳ）薄
膜太陽電池モジュールの構造及びそれを実現できる製造
方法についてすでに報告されている（例えば、 ２３ｒ
ｄ ｐｒｏｃ．ｏｆ ＩＥＥＥ Ｐｈｏｔｏｖｏｌｔａｉ
ｃ Ｓｐｅｃｉａｌｉｓｔ Ｃｏｎｆｅｒｅｎｃｅ １９
９３）。この報告の薄膜太陽電池モジュールの構造及び
製造方法を、それぞれ図４及び図５に示している。2. Description of the Related Art Hitherto, the structure of a CuInSe2 (CIS) thin film solar cell module and a manufacturing method capable of realizing the same have already been reported (for example, 23r).
d proc. of IEEE Photovoltai
c Specialist Conference 19
93). The structure and manufacturing method of the thin-film solar cell module of this report are shown in FIGS. 4 and 5, respectively.
【０００３】図４は、絶縁性基板１上に下部電極２Ａ、
ＣＩＳ薄膜／ＣｄＳ薄膜接合層３Ａ、上部電極４Ａより
なるセルＡと同様に下部電極２Ｂ、ＣＩＳ薄膜／ＣｄＳ
薄膜の接合層３Ｂ、上部電極４ＢよりなるセルＢの直列
接続の断面図である。薄膜太陽電池モジュールは、この
ように複数個のセルを直列接続してなっている。具体的
には、上部電極４Ａと下部電極２Ｂのみを電気的に接続
することによって直列接続がなされる。そのための分離
部Ｑ及び接合部の短絡を防ぐために絶縁層５’が設けら
れている。FIG. 4 shows a lower electrode 2A on an insulating substrate 1,
The lower electrode 2B, the CIS thin film / CdS as well as the cell A including the CIS thin film / CdS thin film bonding layer 3A and the upper electrode 4A
It is sectional drawing of the serial connection of the cell B which consists of the thin bonding layer 3B and the upper electrode 4B. In this way, the thin-film solar cell module has a plurality of cells connected in series. Specifically, serial connection is made by electrically connecting only the upper electrode 4A and the lower electrode 2B. For that purpose, an insulating layer 5 ′ is provided in order to prevent a short circuit between the separation portion Q and the joint portion.
【０００４】図５は、図４の構造を実現するための製造
方法を示している。まず、絶縁性基板１上にあらかじめ
パターニングされた下部電極２Ａ、２Ｂ上にＣＩＳ薄膜
／ＣｄＳ薄膜接合層３を形成する（図５（ａ））。FIG. 5 shows a manufacturing method for realizing the structure of FIG. First, the CIS thin film / CdS thin film bonding layer 3 is formed on the lower electrodes 2A and 2B patterned in advance on the insulating substrate 1 (FIG. 5A).
【０００５】続いてレーザースクライビング技術あるい
はメカニカルスクライビング技術を用いて接合部３のみ
接合層３Ａと接合層３Ｂのように分離する（図５
（ｂ））。さらに、接合部の短絡を防止するための絶縁
層５’を形成した後（図５（ｃ））、上部電極４を形成
し（図５（ｄ））、最後に図４にＱで示した部分をレー
ザースクライビング技術あるいはメカニカルスクライビ
ング技術を用いて上部電極４Ａと上電極４Ｂに分離し、
図４の構造のような半導体薄膜による接合層が、ＣｄＳ
薄膜とＣｄＴｅ薄膜とで形成された太陽電池モジュール
を得る。Subsequently, only the bonding portion 3 is separated into a bonding layer 3A and a bonding layer 3B by using a laser scribing technique or a mechanical scribing technique (FIG. 5).
(B)). Furthermore, after forming an insulating layer 5 ′ for preventing short-circuiting of the joint portion (FIG. 5 (c)), the upper electrode 4 is formed (FIG. 5 (d)), and finally indicated by Q in FIG. The part is separated into an upper electrode 4A and an upper electrode 4B by using laser scribing technology or mechanical scribing technology,
A bonding layer made of a semiconductor thin film as in the structure of FIG.
A solar cell module formed of a thin film and a CdTe thin film is obtained.
【０００６】[0006]
【発明が解決しようとする課題】従来のＣＩＳ薄膜太陽
電池モジュールの問題点は、図４及び５に示したように
薄膜のスクライビングプロセスが２度あり、モジュール
作製のスループットを低下させている。さらに、スクラ
イビング時に生じる加工の残査物が後工程に悪影響をお
よぼし、モジュール特性の低下や電気的な短絡を生じ、
歩留まり低下の原因となる。特に図５（ｂ）に示したよ
うなスクライビングプロセスの後、絶縁層５’や上部電
極４を形成する必要がある場合、スクライビングの後、
残査物の処理プロセスが必要である。The problem with the conventional CIS thin film solar cell module is that the thin film scribing process is performed twice as shown in FIGS. 4 and 5, which lowers the throughput of module manufacturing. Furthermore, the processing residue generated during scribing adversely affects the subsequent process, resulting in deterioration of module characteristics and electrical short circuit,
This causes a decrease in yield. Especially when it is necessary to form the insulating layer 5 ′ and the upper electrode 4 after the scribing process as shown in FIG. 5B, after the scribing,
Residue processing process is required.
【０００７】本発明の目的は、以上のような解決すべき
課題に鑑み、すぐれた生産性と歩留まりを保持できる薄
膜太陽電池モジュールの製造方法を提供することであ
る。In view of the above problems to be solved, an object of the present invention is to provide a method of manufacturing a thin film solar cell module capable of maintaining excellent productivity and yield.
【０００８】[0008]
【課題を解決するための手段】前記課題を解決するた
め、本発明の薄膜太陽電池モジュールの作製方法は、絶
縁性基板上に下部電極と半導体薄膜による接合層と上部
電極を全面形成した後、前記下部電極と半導体薄膜によ
る接合層と上部電極をレーザー光線を用いてライン状に
切断して複数個の短冊状の島を面内に形成する工程と、
レーザー光線の照射部近傍に複数種のガスを導くことに
よって前記レーザー光線で加工した切口の断面部に絶縁
性薄膜を選択的に形成する工程と、前記切口の近傍を前
記半導体薄膜による接合層と上部電極のみをレーザー光
線を用いて切断し、下部電極をライン状に露出させる工
程と、該工程によって露出した下部電極と隣接する島の
上部電極とを電気的に接続するための接続電極を形成す
る工程とよりなることを特徴とする。In order to solve the above-mentioned problems, a method of manufacturing a thin-film solar cell module of the present invention comprises the steps of forming a lower electrode, a bonding layer of a semiconductor thin film and an upper electrode on an insulating substrate, A step of forming a plurality of strip-shaped islands in a plane by cutting the lower electrode and the bonding layer of the semiconductor thin film and the upper electrode in a line shape using a laser beam;
A step of selectively forming an insulating thin film on a cross section of a cut processed by the laser beam by introducing a plurality of kinds of gas in the vicinity of an irradiation part of the laser beam; and a bonding layer and an upper electrode formed by the semiconductor thin film near the cut. A step of cutting only the lower electrode with a laser beam to expose the lower electrode in a line shape, and a step of forming a connecting electrode for electrically connecting the lower electrode exposed by the step and the upper electrode of an adjacent island. Is characterized in that
【０００９】前記構成の薄膜太陽電池モジュールの作製
方法において、レーザー光線の照射部近傍に複数種のガ
スを導くことによって前記レーザー光線で加工した切口
の断面部に絶縁性薄膜を選択的に形成する工程におい
て、照射するレーザー光線が赤外線レーザーと紫外線レ
ーザーの重ね合わせからなることが好ましい。In the method of manufacturing a thin-film solar cell module having the above structure, in the step of selectively forming an insulating thin film on a cross-section of a cut processed by the laser beam by introducing a plurality of kinds of gas in the vicinity of a laser beam irradiation portion. It is preferable that the laser beam to be irradiated is a combination of an infrared laser and an ultraviolet laser.
【００１０】また前記構成の作製方法において、薄膜太
陽電池モジュールの半導体薄膜による接合層が、ＣｄＳ
薄膜とＣｄＴｅ薄膜とで形成された接合層であることが
好ましい。In the method of manufacturing the above-mentioned structure, the bonding layer of the semiconductor thin film of the thin film solar cell module is CdS.
It is preferably a bonding layer formed of a thin film and a CdTe thin film.
【００１１】また前記作製方法において、薄膜太陽電池
モジュールの半導体薄膜による接合層が、ＣｄＳ薄膜と
ＣｕＩｎＳｅ2 薄膜をあるいはＣｕＩｎＳ2 薄膜とで形
成された接合層であることが好ましい。In the above manufacturing method, it is preferable that the semiconductor thin film bonding layer of the thin film solar cell module is a bonding layer formed of a CdS thin film and a CuInSe 2 thin film or a CuInS 2 thin film.
【００１２】本発明の太陽電池モジュールの作製装置
は、出力を調節する手段及び集光手段を備えたレーザー
と、不活性ガスの導入部および排出部と、レーザー光線
を導入する窓を備えた容器と、前記容器内に前後左右上
下に可動なステージと、前記ステージ上の前記レーザー
光線が照射される位置の近傍に複数種のガスを導入する
複数個のノズルを有することを要旨とする。A device for producing a solar cell module of the present invention comprises a laser provided with a means for adjusting the output and a condensing means, an inlet and outlet for an inert gas, and a container provided with a window for introducing a laser beam. The gist of the present invention is to have a stage movable in the front-rear, left-right, and up-down directions in the container, and a plurality of nozzles for introducing a plurality of kinds of gas in the vicinity of a position on the stage where the laser beam is irradiated.
【００１３】前記作製装置の構成において、レーザー光
線が、第１のレーザー光線と、第２のレーザー光線とか
らなり、該第２のレーザー光線を前記第１のレーザー光
線に重畳する光学系を備えていることが好ましい。In the construction of the manufacturing apparatus, it is preferable that the laser beam is composed of a first laser beam and a second laser beam, and an optical system for superimposing the second laser beam on the first laser beam is provided. .
【００１４】また前記作製装置の構成において、レーザ
ー光線が赤外線レーザーであることが好ましい。また前
記構成の作製装置において、前記第１のレーザー光線が
赤外線レーザーであり、前記第２のレーザー光線が紫外
線レーザーであることが好ましい。Further, in the constitution of the manufacturing apparatus, it is preferable that the laser beam is an infrared laser. Further, in the manufacturing apparatus having the above structure, it is preferable that the first laser beam is an infrared laser and the second laser beam is an ultraviolet laser.
【００１５】[0015]
【作用】本発明の太陽電池モジュールの作製方法は、絶
縁性基板上に下部電極と半導体薄膜による接合層と上部
電極を全面形成した後、前記下部電極と半導体薄膜によ
る接合層と上部電極をレーザー光線を用いてライン状に
切断して複数個の短冊状の島を面内に形成する工程と、
レーザー光線の照射部近傍に複数種のガスを導くことに
よって前記レーザー光線で加工した切口の断面部に絶縁
性薄膜を選択的に形成する工程と、前記切口の近傍を前
記半導体薄膜による接合層と上部電極のみをレーザー光
線を用いて切断し、下部電極をライン状に露出させる工
程と、該露出した下部電極と隣接する島の上部電極とを
電気的に接続するための接続電極を形成する工程とより
なる。According to the method of manufacturing a solar cell module of the present invention, a lower electrode, a bonding layer made of a semiconductor thin film, and an upper electrode are formed on an insulating substrate, and then the bonding layer made of the lower electrode, a semiconductor thin film, and an upper electrode is irradiated with a laser beam. A step of forming a plurality of strip-shaped islands in the plane by cutting in a line shape using
A step of selectively forming an insulating thin film on a cross section of a cut processed by the laser beam by introducing a plurality of kinds of gas in the vicinity of the irradiation part of the laser beam; and a bonding layer and an upper electrode formed by the semiconductor thin film near the cut. Only the step of cutting only the lower electrode with a laser beam to expose the lower electrode in a line shape, and the step of forming a connection electrode for electrically connecting the exposed lower electrode to the upper electrode of the adjacent island .
【００１６】このように、薄膜太陽電池セルの構成に必
要な薄膜（下部電極、半導体接合層、上部電極）をすべ
て形成した後に、レーザー光線の照射によってセルの分
離と加工断面への絶縁層の選択的形成を連続的に行うの
で、絶縁層の形成が効率良く行える。その上、従来方法
で大きな課題となっていた加工残査の問題やスループッ
トの低下の問題を解決することができる。After forming all the thin films (lower electrode, semiconductor junction layer, and upper electrode) necessary for the construction of the thin-film solar cell in this way, the cells are separated by irradiation of a laser beam and the insulating layer is selected for the processed cross section. Since the target formation is continuously performed, the insulating layer can be efficiently formed. In addition, it is possible to solve the problems of processing residuals and the reduction of throughput, which have been major problems in conventional methods.
【００１７】前記作製方法において、レーザー光線の照
射部近傍に複数種のガスを導くことによって前記レーザ
ー光線で加工した切口の断面部に絶縁性薄膜を選択的に
形成する工程において、照射するレーザー光線が赤外線
レーザーと紫外線レーザーの重ね合わせからなるという
好ましい例によれば、より効率よく加工を行うことがで
きる。In the above-mentioned manufacturing method, in the step of selectively forming an insulating thin film on the cross section of the cut processed by the laser beam by introducing a plurality of kinds of gas in the vicinity of the laser beam irradiation part, the laser beam to be irradiated is an infrared laser. According to the preferable example of the superposition of the above and the ultraviolet laser, the processing can be performed more efficiently.
【００１８】また、前記作製方法において、半導体薄膜
による接合層が、ＣｄＳ薄膜とＣｄＴｅ薄膜とで形成さ
れた接合層であっても、加工残量の問題やスループット
の低下の問題を解消することができる。Further, in the above-mentioned manufacturing method, even if the bonding layer formed of the semiconductor thin film is a bonding layer formed of the CdS thin film and the CdTe thin film, the problem of the remaining processing amount and the problem of the decrease in throughput can be solved. it can.
【００１９】本発明の太陽電池モジュールの作製装置
は、前記のように出力を調節する手段及び集光手段を備
えたレーザーと、不活性ガスの導入部および排出部と、
レーザー光線を導入する窓を備えた容器と、前記容器内
に前後左右上下に可動なステージと、前記ステージ上の
前記レーザー光線が照射される位置の近傍に複数種のガ
スを導入する複数個のノズルを有し、レーザースポット
に不活性ガスを供給しながら加工するように構成してい
るので、酸化膜を生成させることなく、半導体薄膜によ
る接合層を分離加工ができる。その後酸素を含んだガス
をレーザースポットに供給しながら加工するので、温度
上昇した層が酸化して膜を形成し、絶縁膜とすることが
でき、生産性を向上させることができる。The apparatus for producing a solar cell module of the present invention comprises a laser provided with the means for adjusting the output and the light condensing means as described above, an inlet and an outlet for the inert gas,
A container provided with a window for introducing a laser beam, a stage movable in the container in the front, rear, left, right, up, and down, and a plurality of nozzles for introducing a plurality of gases in the vicinity of the position on the stage where the laser beam is irradiated. Since it is configured to be processed while supplying an inert gas to the laser spot, the bonding layer made of the semiconductor thin film can be separated and processed without forming an oxide film. After that, since the gas containing oxygen is processed while being supplied to the laser spot, the layer whose temperature has risen is oxidized to form a film, which can be used as an insulating film, and productivity can be improved.
【００２０】前記作製装置において、レーザー光線が、
第１のレーザー光線と、第２のレーザー光線とからな
り、該第２のレーザー光線を前記第１のレーザー光線に
重畳する光学系を備えている好ましい例によれば、絶縁
膜の堆積速度を上げることができ、生産性を向上させる
ことができる。In the above manufacturing apparatus, the laser beam is
According to the preferable example including the first laser beam and the second laser beam, and including the optical system that superimposes the second laser beam on the first laser beam, the deposition rate of the insulating film can be increased. , The productivity can be improved.
【００２１】また前記作製装置において、レーザー光線
が赤外線レーザーである好ましい例によれば、歩留りを
よくすることができ、生産性を向上することができる。
また前記構成の作製装置において、前記第１のレーザー
光線が赤外線レーザーであり、前記第２のレーザー光線
が紫外線レーザーであることが好ましい例によれば、薄
膜加工モードと局部加熱モードとを容易に選択すること
ができ、加工の変更が容易にでき、生産性を向上させる
ことができる。Further, in the above-mentioned manufacturing apparatus, according to a preferable example in which the laser beam is an infrared laser, the yield can be improved and the productivity can be improved.
According to an example in which the first laser beam is an infrared laser and the second laser beam is an ultraviolet laser in the manufacturing apparatus having the above configuration, the thin film processing mode and the local heating mode are easily selected. It is possible to change the processing easily and improve the productivity.
【００２２】[0022]
【実施例】以下、図面に基づいて本発明の太陽電池モジ
ュールの作製方法、およびその作製装置について説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method of manufacturing a solar cell module of the present invention and an apparatus for manufacturing the same will be described below with reference to the drawings.
【００２３】図１は本発明の太陽電池モジュールの１実
施例を示す断面図、図２はその太陽電池モジュールの作
製方法を示す断面図、図３は本発明の作製装置のレーザ
ー加工・膜堆積装置の１実施例の概略図である。FIG. 1 is a sectional view showing one embodiment of the solar cell module of the present invention, FIG. 2 is a sectional view showing a method of manufacturing the solar cell module, and FIG. 3 is laser processing / film deposition of the manufacturing apparatus of the present invention. 1 is a schematic view of one embodiment of the device.
【００２４】本発明の薄膜太陽電池モジュールの作製方
法は、まず、絶縁性基板１上の全面にわたって下部電極
２、半導体薄膜の接合層３、上部電極４を形成する（図
２（ａ））。ここで、ＣｕＩｎＳｅ2 あるいはＣｕＩｎ
Ｓ2 （ＣＩＳ）薄膜太陽電池の場合は、通常、下部電極
としてＭｏ薄膜（膜厚１μｍ）を用い、半導体接合層と
して下部電極側にＣＩＳ薄膜を配したＣＩＳ（膜厚２μ
ｍ）／ＣｄＳあるいはＺｎＯ（膜厚０．１μｍ）接合層
を用い、上部電極として透明電極であるＩＴＯなど（膜
厚１μｍ）を用いる。なお、透光性の絶縁基板１を用い
て基板側から透明導電膜（ＩＴＯなど）／ＣｄＳあるい
はＺｎＯ／ＣＩＳ／Ｍｏからなる構造とした上下を反転
させた構造の薄膜太陽電池モジュールであっても同様に
形成できる。In the method of manufacturing a thin film solar cell module of the present invention, first, the lower electrode 2, the bonding layer 3 of the semiconductor thin film, and the upper electrode 4 are formed over the entire surface of the insulating substrate 1 (FIG. 2A). Here, CuInSe 2 or CuIn
In the case of an S 2 (CIS) thin film solar cell, usually, a Mo thin film (film thickness 1 μm) is used as the lower electrode, and a CIS thin film (film thickness 2 μm) is arranged on the lower electrode side as a semiconductor bonding layer.
m) / CdS or ZnO (film thickness 0.1 μm) bonding layer is used, and ITO or the like (film thickness 1 μm) which is a transparent electrode is used as the upper electrode. It should be noted that a thin-film solar cell module having a structure in which the transparent insulating substrate 1 is used and the structure is made of a transparent conductive film (ITO or the like) / CdS or ZnO / CIS / Mo from the substrate side upside down may be used. It can be formed similarly.
【００２５】なお、ＣｄＴｅ薄膜太陽電池の場合は、通
常、透光性絶縁基板上１に下部電極として透明電極であ
るＩＴＯなど（膜厚１μｍ）を用い、半導体接合層とし
て下部電極側にＣｄＳ薄膜を配したＣｄＳ（膜厚０．１
μｍ）／ＣｄＴｅ（膜厚３μｍ）接合層を用い、上部電
極としてグラファイト薄膜（膜厚１μｍ）を用いる。な
お、絶縁基板１を用いて基板側からグラファイト薄膜／
ＣｄＴｅ／ＣｄＳ／ＩＴＯからなる構造とした上下を反
転させた構造の薄膜太陽電池モジュールにおいても同様
に形成できる。In the case of a CdTe thin film solar cell, usually, ITO or the like (film thickness 1 μm) which is a transparent electrode is used as the lower electrode on the transparent insulating substrate 1, and the CdS thin film is used as the semiconductor bonding layer on the lower electrode side. With CdS (film thickness 0.1
μm) / CdTe (thickness 3 μm) bonding layer, and a graphite thin film (thickness 1 μm) is used as the upper electrode. In addition, using the insulating substrate 1, the graphite thin film /
A thin film solar cell module having a structure of CdTe / CdS / ITO and a vertically inverted structure can be formed in the same manner.
【００２６】次に、以上の薄膜堆積プロセスを経たあ
と、図３に示したような薄膜太陽電池モジュール作製装
置のＸＹＺ軸可動ステージ１０に薄膜が堆積した基板
１’を取り付ける。ここで軸方向は、図３に示す紙面の
左右方向をＸ軸方向とし、上下方向をＺ方向とし、紙面
に垂直方向をＹ方向にとっている。また、基板１’は、
ステージをとおして一定の温度（２５℃程度）になるよ
う水冷している。Ｌ１は、赤外線レーザー（具体的には
ＹＡＧレーザー）であり、その出力パワーを直接調節し
たりＮＤフィルターなどによって調節することによっ
て、薄膜加工モードと基板局部加熱モード（Ｔモードと
呼ぶ）を選択することができるようになっている。Next, after the above thin film deposition process, the substrate 1'where the thin film is deposited is attached to the XYZ axis movable stage 10 of the thin film solar cell module manufacturing apparatus as shown in FIG. Here, regarding the axial direction, the horizontal direction of the paper surface shown in FIG. 3 is the X-axis direction, the vertical direction is the Z direction, and the vertical direction to the paper surface is the Y direction. Also, the substrate 1'is
It is water-cooled to a constant temperature (about 25 ° C) through the stage. L1 is an infrared laser (specifically, a YAG laser), and the thin film processing mode and the substrate local heating mode (referred to as T mode) are selected by directly adjusting the output power or adjusting the output power with an ND filter or the like. Is able to.
【００２７】薄膜太陽電池モジュール作製装置の加工モ
ードにおいては、下部電極まで切断してしまうモード
（ＰＨモードと呼ぶ）と下部電極のみを残して切断でき
るモード（ＰＬモードと呼ぶ）にレーザービーム強度を
調節して選択できるようになっている。このレーザービ
ームのスポット径は、レーザービームの集光用レンズＬ
Ｎとステージ１０のＺ軸方向の上下によって２０μｍか
ら２ｍｍ程度まで変更できるようにしている。In the processing mode of the thin-film solar cell module manufacturing apparatus, the laser beam intensity is divided into a mode in which even the lower electrode is cut (called PH mode) and a mode in which only the lower electrode can be cut (called PL mode). It can be adjusted and selected. The spot diameter of the laser beam is the lens L for condensing the laser beam.
It can be changed from 20 μm to about 2 mm depending on N and the vertical direction of the stage 10 in the Z-axis direction.
【００２８】本実施例の作製装置による太陽電池モジュ
ールの作成では、まず、レーザーのスポット径を５０μ
ｍに絞りステージをＹ軸方向に移動させながらＰＨモー
ドによって薄膜加工を行う。この際、チャンバー１１内
には、常に新鮮なＡｒなどの不活性ガスがＳ１を通して
導入されている。加工後の断面は、図２（ｂ）に示した
ようであり、分離幅は約５０μｍで、基板１’のＹ軸方
向にライン状に分離されている。In the production of the solar cell module by the production apparatus of this embodiment, first, the laser spot diameter is set to 50 μm.
Thin film processing is performed in PH mode while moving the diaphragm stage to m in the Y-axis direction. At this time, a fresh inert gas such as Ar is always introduced into the chamber 11 through S1. The cross section after processing is as shown in FIG. 2B, the separation width is about 50 μm, and the substrates 1 ′ are linearly separated in the Y-axis direction.
【００２９】続いてレーザービームＬ１をＴ１モードに
切り換えて、先にライン状に加工した部分と同一部分を
走査する。その際、ジメチル亜鉛をキャリアガスの水素
とともにノズル８より、酸素ガスをノズル９より、レー
ザースポットの近傍に供給しておく。その結果、レーザ
ースポットが照射されているところだけが２００℃前後
の温度に上昇するため、その近傍のみに高抵抗のＺｎＯ
薄膜を形成することができる。したがって、図２（ｃ）
に示したように加工部の切口のみに絶縁層として高抵抗
のＺｎＯ薄膜５をライン状に形成することができる。Subsequently, the laser beam L1 is switched to the T1 mode, and the same portion as the portion previously processed into the line shape is scanned. At that time, dimethyl zinc is supplied together with hydrogen as a carrier gas from a nozzle 8 and oxygen gas is supplied from a nozzle 9 in the vicinity of the laser spot. As a result, the temperature rises to around 200 ° C. only where the laser spot is irradiated, so high resistance ZnO is present only in the vicinity thereof.
A thin film can be formed. Therefore, as shown in FIG.
As shown in, the high resistance ZnO thin film 5 can be formed in a line shape as an insulating layer only in the cut portion of the processed portion.
【００３０】また、図３に示したようにハーフミラーＭ
を用いて紫外線レーザー（具体的には、Ｈｅ−Ｃｄレー
ザーあるいはエキシマーレーザー）Ｌ２をＬ１に重畳さ
せるとさらにＺｎＯ薄膜の堆積速度が増しスループット
を上げることができる。Further, as shown in FIG. 3, the half mirror M
When an ultraviolet laser (specifically, a He-Cd laser or an excimer laser) L2 is superposed on L1 by using, the deposition rate of the ZnO thin film is further increased and the throughput can be increased.
【００３１】さらに、基板１’をステージによってＸ軸
方向に２００μｍ程度移動し、ステージをのＺ軸方向に
移動させてレーザースポットを２００μｍ程度のものと
する。その後、ステージをＹ軸方向に走査しながらＰＬ
モードのレーザービームＬ１によって薄膜加工を行う。
この際もチャンバー１１内は、常に新鮮なＡｒなどの不
活性ガスのみがＳ１を通して導入されている。加工後の
断面は、図２（ｄ）に示したようになり、符号Ｐで示し
たように幅は約２００μｍで下部電極２Ｂの一部を露出
させることができる。Further, the substrate 1'is moved by about 200 μm in the X-axis direction by the stage, and the stage is moved in the Z-axis direction so that the laser spot is about 200 μm. After that, while scanning the stage in the Y-axis direction, PL
Thin film processing is performed by the mode laser beam L1.
Also in this case, only the inert gas such as fresh Ar is always introduced into the chamber 11 through S1. The cross section after processing is as shown in FIG. 2D, and the width is about 200 μm as shown by symbol P, and a part of the lower electrode 2B can be exposed.
【００３２】そして、上述の図２（ｂ）〜（ｄ）までの
プロセスを経たあと、基板１’をＸ軸方向に数ｍｍ移動
させて、同様に図２（ｂ）〜（ｄ）までのプロセスを繰
り返して、基板１’に形成された薄膜太陽電池を次の短
冊状の島に分離する。2 (b) to 2 (d), the substrate 1'is moved in the X-axis direction by several mm, and the same process as in FIGS. 2 (b) to 2 (d) is performed. The process is repeated to separate the thin film solar cell formed on the substrate 1 ′ into the following strip-shaped islands.
【００３３】短冊状の島に分離された太陽電池セルは、
図１に示したようにスクリーン印刷によって導電性厚膜
６が形成され、太陽電池セルの直列接続が完成する。図
１は、セルＡの上部電極４ＡとセルＢの下部電極２Ｂが
導電性厚膜６によって電気的接続されることによって、
セルＡとセルＢが直列接続された状態を示している。こ
の際、形成された高抵抗ＺｎＯ薄膜は、接合層３Ａの導
電性厚膜６による短絡を防止している。The solar cells separated into strip-shaped islands are
As shown in FIG. 1, the conductive thick film 6 is formed by screen printing, and the series connection of solar cells is completed. FIG. 1 shows that the upper electrode 4A of the cell A and the lower electrode 2B of the cell B are electrically connected by the conductive thick film 6,
The state where the cell A and the cell B are connected in series is shown. At this time, the formed high resistance ZnO thin film prevents a short circuit due to the conductive thick film 6 of the bonding layer 3A.
【００３４】以上に述べたように、本発明の薄膜太陽電
池モジュールの作製方法によれば、太陽電池を構成する
薄膜の形成プロセスのあとにのみ、薄膜の加工プロセス
（接合層の短絡防止層５の形成プロセスを含む）があ
り、連続したプロセスで行うことができる。As described above, according to the method for producing a thin-film solar cell module of the present invention, the thin-film processing process (bonding layer short-circuit prevention layer 5) is performed only after the thin-film forming process of the solar cell is formed. (Including the forming process), and can be performed in a continuous process.
【００３５】[0035]
【発明の効果】上記のように、本発明の薄膜太陽電池モ
ジュールの作製方法およびその作製装置によれば、すぐ
れた生産性と歩留まりを得ることができる。As described above, according to the method for manufacturing a thin film solar cell module and the manufacturing apparatus therefor of the present invention, excellent productivity and yield can be obtained.
【図１】 本発明の薄膜太陽電池モジュールの直列接続
部の断面構造を示す断面図である。FIG. 1 is a sectional view showing a sectional structure of a series connection portion of a thin film solar cell module of the present invention.
【図２】 本発明の薄膜太陽電池モジュールの製造プロ
セスを示す断面図である。FIG. 2 is a cross-sectional view showing a manufacturing process of the thin-film solar cell module of the present invention.
【図３】 本発明の薄膜太陽電池モジュールの製造に用
いた薄膜加工・堆積装置を示す断面図である。FIG. 3 is a cross-sectional view showing a thin film processing / deposition apparatus used for manufacturing the thin film solar cell module of the present invention.
【図４】 従来の薄膜太陽電池モジュールの直列接続部
の断面構造を示す断面図である。FIG. 4 is a cross-sectional view showing a cross-sectional structure of a serial connection portion of a conventional thin film solar cell module.
【図５】 従来の薄膜太陽電池モジュールの製造プロセ
スを示す断面図である。FIG. 5 is a cross-sectional view showing a manufacturing process of a conventional thin-film solar cell module.
１ 絶縁性基板 １´ 薄膜太陽電池モジュール基板 ２、２Ａ、２Ｂ 下部電極 ３、３Ａ、３Ｂ 半導体接合層 ４、４Ａ、４Ｂ 上部電極 ５、５’ 絶縁層 ６ 導電性厚膜 ７ 窓 ８ 絶縁層形成用ガス導入用ノズル ９ 絶縁層形成用ガス導入用ノズル １０ ＸＹＺ軸可動ステージ １１ チャンバー 1 Insulating substrate 1'Thin film solar cell module substrate 2, 2A, 2B Lower electrode 3, 3A, 3B Semiconductor junction layer 4, 4A, 4B Upper electrode 5, 5 'Insulating layer 6 Conductive thick film 7 Window 8 Insulating layer formation Gas introduction nozzle 9 Insulating layer forming gas introduction nozzle 10 XYZ axis movable stage 11 Chamber
Claims (8)
よる接合層と上部電極を全面形成した後、前記下部電極
と半導体薄膜による接合層と上部電極をレーザー光線を
用いてライン状に切断して複数個の短冊状の島を面内に
形成する工程と、レーザー光線の照射部近傍に複数種の
ガスを導くことによって前記レーザー光線で加工した切
口の断面部に絶縁性薄膜を選択的に形成する工程と、前
記切口の近傍を前記半導体薄膜による接合層と上部電極
のみをレーザー光線を用いて切断し、下部電極をライン
状に露出させる工程と、該露出した下部電極と隣接する
島の上部電極とを電気的に接続するための接続電極を形
成する工程とよりなることを特徴とする薄膜太陽電池モ
ジュールの作製方法。1. A lower electrode, a bonding layer made of a semiconductor thin film, and an upper electrode are entirely formed on an insulating substrate, and then the bonding layer made of the lower electrode, the semiconductor thin film, and an upper electrode are cut into lines using a laser beam. A step of forming a plurality of strip-shaped islands in a plane, and a step of selectively forming an insulating thin film on the cross-sectional portion of the cut processed by the laser beam by introducing a plurality of kinds of gas in the vicinity of the irradiation portion of the laser beam A step of cutting only the bonding layer of the semiconductor thin film and the upper electrode with a laser beam in the vicinity of the cut portion to expose the lower electrode in a line, and the exposed lower electrode and the upper electrode of an island adjacent to the exposed lower electrode. A method of manufacturing a thin-film solar cell module, comprising the step of forming a connection electrode for electrical connection.
のガスを導くことによって前記レーザー光線で加工した
切口の断面部に絶縁性薄膜を選択的に形成する工程にお
いて、照射するレーザー光線が赤外線レーザーと紫外線
レーザーの重ね合わせからなる請求項１に記載の薄膜太
陽電池モジュールの作製方法。2. In the step of selectively forming an insulating thin film on a cross section of a cut processed by the laser beam by introducing a plurality of kinds of gas in the vicinity of the irradiation part of the laser beam, the laser beam to be irradiated is an infrared laser and an ultraviolet ray. The method for producing a thin-film solar cell module according to claim 1, which comprises stacking lasers.
薄膜とＣｄＴｅ薄膜とで形成された接合層である請求項
１または２に記載の薄膜太陽電池モジュールの作製方
法。3. The bonding layer formed of the semiconductor thin film is CdS.
The method for producing a thin-film solar cell module according to claim 1, which is a bonding layer formed of a thin film and a CdTe thin film.
薄膜とＣｕＩｎＳｅ2薄膜をあるいはＣｕＩｎＳ2 薄膜
とで形成された接合層である請求項１または２に記載の
薄膜太陽電池モジュールの作製方法。4. The bonding layer formed of the semiconductor thin film is CdS.
The method for producing a thin film solar cell module according to claim 1 or 2, which is a bonding layer formed of a thin film and a CuInSe 2 thin film or a CuInS 2 thin film.
たレーザーと、不活性ガスの導入部および排出部と、レ
ーザー光線を導入する窓を備えた容器と、前記容器内に
前後左右上下に可動なステージと、前記ステージ上の前
記レーザー光線が照射される位置の近傍に複数種のガス
を導入する複数個のノズルを有する薄膜太陽電池モジュ
ールの作製装置。5. A laser provided with a means for adjusting the output and a condensing means, an inert gas introduction part and an exhaust part, a container provided with a window for introducing a laser beam, and front, rear, left, right, up and down inside the container. An apparatus for manufacturing a thin-film solar cell module having a movable stage and a plurality of nozzles for introducing a plurality of kinds of gas in the vicinity of a position on the stage where the laser beam is irradiated.
線と、第２のレーザー光線とからなり、該第２のレーザ
ー光線に前記第１のレーザー光線を重畳する光学系を備
えた請求項５に記載の薄膜太陽電池モジュールの作製装
置。6. The thin-film sun according to claim 5, wherein the laser beam comprises a first laser beam and a second laser beam, and an optical system for superimposing the first laser beam on the second laser beam is provided. Battery module manufacturing equipment.
ーである請求項５または６に記載の薄膜太陽電池モジュ
ールの作製装置。7. The apparatus for manufacturing a thin film solar cell module according to claim 5, wherein the first laser beam is an infrared laser.
ーである請求項５〜７のいずれかに記載の薄膜太陽電池
モジュールの作製装置。8. The apparatus for producing a thin film solar cell module according to claim 5, wherein the second laser beam is an ultraviolet laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27356994A JP3537196B2 (en) | 1994-11-08 | 1994-11-08 | Method of manufacturing solar cell module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27356994A JP3537196B2 (en) | 1994-11-08 | 1994-11-08 | Method of manufacturing solar cell module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08139351A true JPH08139351A (en) | 1996-05-31 |
| JP3537196B2 JP3537196B2 (en) | 2004-06-14 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27356994A Expired - Lifetime JP3537196B2 (en) | 1994-11-08 | 1994-11-08 | Method of manufacturing solar cell module |
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| Country | Link |
|---|---|
| JP (1) | JP3537196B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000007249A1 (en) * | 1998-07-27 | 2000-02-10 | Citizen Watch Co., Ltd. | Solar cell and method of producing the same, and mask for photolithography for producing solar cell |
| JP2009512197A (en) * | 2005-10-07 | 2009-03-19 | アプライド マテリアルズ インコーポレイテッド | Systems and methods for forming improved thin film solar cell interconnects |
| WO2010113880A1 (en) * | 2009-03-31 | 2010-10-07 | 芝浦メカトロニクス株式会社 | Method for manufacturing solar cell, apparatus for manufacturing solar cell, and solar cell |
| JP2012074619A (en) * | 2010-09-29 | 2012-04-12 | Showa Shell Sekiyu Kk | Compound-system thin-film solar cell module and manufacturing method therefor |
| US8298852B2 (en) | 2008-12-29 | 2012-10-30 | Jusung Engineering Co., Ltd. | Thin film type solar cell and method for manufacturing the same |
| WO2013054600A1 (en) | 2011-10-14 | 2013-04-18 | 日東電工株式会社 | Solar cell manufacturing method and solar cell module |
| US8507310B2 (en) | 2008-12-04 | 2013-08-13 | Mitsubishi Electric Corporation | Method for manufacturing thin-film photoelectric conversion device |
| EP2442361A3 (en) * | 2010-10-15 | 2017-05-03 | Wilhelm Stein | Method for manufacturing interconnects in a thin film photovoltaic module and thin film photovoltaic module |
-
1994
- 1994-11-08 JP JP27356994A patent/JP3537196B2/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000007249A1 (en) * | 1998-07-27 | 2000-02-10 | Citizen Watch Co., Ltd. | Solar cell and method of producing the same, and mask for photolithography for producing solar cell |
| JP2009512197A (en) * | 2005-10-07 | 2009-03-19 | アプライド マテリアルズ インコーポレイテッド | Systems and methods for forming improved thin film solar cell interconnects |
| US8507310B2 (en) | 2008-12-04 | 2013-08-13 | Mitsubishi Electric Corporation | Method for manufacturing thin-film photoelectric conversion device |
| US8298852B2 (en) | 2008-12-29 | 2012-10-30 | Jusung Engineering Co., Ltd. | Thin film type solar cell and method for manufacturing the same |
| WO2010113880A1 (en) * | 2009-03-31 | 2010-10-07 | 芝浦メカトロニクス株式会社 | Method for manufacturing solar cell, apparatus for manufacturing solar cell, and solar cell |
| JP2012074619A (en) * | 2010-09-29 | 2012-04-12 | Showa Shell Sekiyu Kk | Compound-system thin-film solar cell module and manufacturing method therefor |
| EP2442361A3 (en) * | 2010-10-15 | 2017-05-03 | Wilhelm Stein | Method for manufacturing interconnects in a thin film photovoltaic module and thin film photovoltaic module |
| WO2013054600A1 (en) | 2011-10-14 | 2013-04-18 | 日東電工株式会社 | Solar cell manufacturing method and solar cell module |
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|---|---|
| JP3537196B2 (en) | 2004-06-14 |
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